STW4N150中文资料 - 360文档中心

万高产品速选表

A(63-250A) 内置式 AC220V 50Hz/60Hz
b b b b v b b b
0, 5, 15, 30 0, 5, 15, 30 b -
备注：■ 为标准配置，□ 为选配 “*”为仅在选配电流监测模块后具有此功能。
B (63-630A) 装置式 AC220V 50Hz/60Hz
b b b b b b b b b v b b b
WATSN 100-630A PC级型号定义与说明
Ք཮‫(ࡽޙ‬PCप)
WATSN 施耐德万高
N系列自动转换开关
B-
160/ 160 ·
控制器壳架电流额定电流
A B* D
4 极数
3 4
PC
R
X
电器级别工作方式附加功能
PC
R
X
S
F
I
I
控制器类型：A-末端型；B-基本型；D-智能型壳架电流等级：100, 160, 250, 400, 630 额定电流等级：100, 160, 250, 400, 630 极数：3-3极；4-4极电器级别：PC级工作方式：R-自投自复；S-自投不自复；I-互为备用附加功能：X-消防联动；F-反馈信号功能；I-电流监测模块（仅D型控制器可选） *可提供装置式和面板式两种安装方式，如需面板式安装请在订货时备注说明
b v
通讯
电流监测模块
A型
b b b b b b b
b b
b 0-63秒 b 0-63秒 b b -
-
备注：■ 为标准配置，□ 为选配
B型
b b b b b b b b b b b
b b b
b 0-255秒 b 0-255秒 b b b -

硅橡胶绝缘耐高电压电线(150)

UL3239硅橡胶绝缘耐高电压电线(150℃)UL3239 Silicone Rubber High Voltage Resistance Wire性能/Properties:z Rated Temperature: 150.℃ Highest Instantaneous Temperature: 200℃. Lowest temperature: -50℃额定耐温: 150,℃短时最高使用环境温度: 200℃，最低使用环境温度: -50℃。

z Rated Voltage in D.C.: 50KV, 40KV, 30KV, 20KV, 10KV, 6KV and 3KV. Suitable in varies external condition 最高耐直流电压: 50KV、40KV、30KV、20KV、10KV、6KV、3KV。

适应于不同条件下使用。

z Solid and Stranded Conductor: 28~14AWG（0.08~2.08mm2）Tin-coated copper导体使用镀锡铜28~14AWG（0.08~2.08mm2）的单支线或多支绞线。

z Different Color Options for Silicone Rubber Insulation: Red, Black, Blue, Grey, Yellow, Brown, Green, Orange, White, Translucent 绝缘采用硅橡胶，颜色有：红、黑、蓝、灰、黄、棕、绿、橙、白、半透明等。

符合欧盟RoHS环保指令要求。

RoHS Compliantz High voltage lead wire for electronic appliances and other equipment such as screen display, microwave oven, and automation etc.电子电器及其它器械的高电压导线(如显示器、微波炉、灯具、汽车等的高电压连接线)。

中日部分黑色金属材料对照表

中日部分黑色金属材料对照表中日部分黑色金属材料对照表(参考) 返回散料机械日本中国附注日本中国附注SS400 Q235-A SUP3 65MnSM490B Q345B SUP3(SUP6-13) 50CrVASCM440（QT）42CrMo 标调质硬度SS400(SS41) Q235-ALBc3 ZQSn10-5 Q235-BS45C(N) 45 正火Q235-CS45C(QT) 45 标调质硬度Q235-DFCD45 QT450-10 SCM415 20CrMnTiSCM435（QT）35CrMo 标调质硬度 SCM435 35CrMoSM58Q 15MnV SCM440 42CrMo6T,4T 8.8 8 BOLT &NUT SCr420 20CrSCW410 ZG230-450 SCr440 40Cr10T 高强度螺栓 10．9级 S20C 20S25C 25S35C 35S45C 45金屬材料記號對照表機械構造用碳鋼鋼材鎳鉻鉬鋼鋼材JIS AISI DIN JIS AISI DINS10C 1010 C10 SNCM220 8620 ---S15C 1015 C15 SNCM240 8640 ---S20C 1020 C22 SNCM415 --- ---S25C 1025 C25 SNCM420 4320 ---S30C 1030 C30 SNCM439 4340 ---S35C 1035 C35 SNCM447 --- ---S40C 1040 C40 高速度工具鋼鋼材S45C 1045 C45 SKH2 T1 ---S50C 1049 C50 SKH3 T4 ---S55C 1055 C55 SKH10 T15 ---鉻鋼鋼材 SKH51 M2 S6-5-2SCr415 --- --- SKH52 M3-1 ---SCr420 --- --- SKH53 M3-2 S6-5-3SCr430 5130 34Cr4 SKH54 M4 ---SCr435 5135 37Cr4 SKH56 M36 ---SCr440 5140 41Cr4 合金工具鋼鋼材SCr445 5147 --- SKS11 F2 ---鉻鉬鋼鋼材 SKS51 L6 ---SCM415 --- --- SKS43 W2-91/2 ---SCM420 --- --- SKS44 W2-91/2 ---SCM430 4130 --- SKD1 D3 X210Cr12SCM435 4135 34CrMo4 SKD11 D2 ---SCM440 4140 42CrMo4 一般鑄鐵品SCM445 4145 --- FC10 20 GG-10機械構造用錳鋼鋼材及錳鉻鋼鋼材 FC15 25 GG-15SMn420 1522 --- FC20 30 GG-20SMn433 1536 --- FC25 35 GG-25SMn438 1541 --- FC30 40 GG-30SMn443 1541 --- FC35 50 GG-35SMnC420 --- --- 球狀黑鉛鑄鐵品SMnC443 --- --- FCD40 --- GGG-40碳工具鋼鋼材 FCD45 60/40/8 GGG-40.3SK1 W1-13 --- FCD50 65/45/12 GGG-50SK2 W1-111/2 --- FCD60 80/55/06 GGG-60SK3 W1-10 C105W1 FCD70 100/70/03 GGG-70SK4 W1-9 --- 不銹鋼(奧斯田鐵系)SK5 W1-8 C80W1 SUS201 AISI 201SK6 W1-7 C80W1 SUS202 AISI 202SK7 --- C70W2 SUS301 AISI 301不銹鋼(肥粒鐵系) SUS302 AISI 302SUS405 AISI 405 DINX6CrA13 SUS302B AISI 302BSUS429 AISI 429 SUS303 AISI 303 DINX10CrNiS189SUS430 AISI 430 DINX6Cr17 SUS303SE AISI 303SESUS430F AISI 430F DINX12CrMoS17 SUS304 AISI 304 DINX5CrNi1810 SUS434 AISI 434 SUS304L AISI 304L DINX2CrNi1911不銹鋼(麻田散鐵系) SUS304NI AISI 304NSUS403 AISI 403 SUS305 AISI 305 DINX5CrNiMo17122SUS410 AISI 410 DINX10Cr13 SUS308 AISI 308 DINX2CrNiMo17132SUS416 AISI 416 SUS309S AISI 309SSUS420JI AISI 420 DINX20Cr13 SUS310S AISI 310SSUS420F AISI 420F SUS316 AISI 316 DINX2CrNiMo17132SUS431 AISI 431 DINX20CrNi172 SUS316L AISI 316LSUS440A AISI 440A SUS316N AISI 316NSUS440B AISI 440B SUS317 AISI 317 DINX2CrNiMo18164SUS440C AISI 440C SUS317L AISI 317L耐熱鋼 SUS321 AISI 321SUH31 SUS347 AISI 347 DINX6CrNiNb1810SUH35 SUS384 AISI 384SUH36 耐熱鋼(麻田散鐵系)SUH37 SUH1SUH38 SUH3SUH309 AISI 309 SUH4SUH310 AISI 310 DINCrNi2520 SUH11SUH330 AISI 330 SUH600耐熱鋼(肥粒鐵系)SUH21 DINCrA1205SUH409 AISI 409 DINX6CrTi12SUH446 AISI 446常用金属材料牌号表示方法(一)机械零件所用金属材料多种多样，为了使生产、管理方便、有序，有关标准对不同金属材料规定了它们牌号的表示方法，以示统一和便于采纳、使用。

ANSYS开关电源设计及其EMIEMC分析

34 © 2012 ANSYS, Inc.
May 22, 2013
30k
136.5m
7.18pF
2000 1600 1200
Mosfet建模
Simplorer Model
Capacitance for STW4N150
Crss Coss Coss,Measured Ciss
C (pF)
800
400
Magnitude (dB)
2x SMT DO3316P-473 Coilcraft Inductor Impedance
100
Measured
80
Modeled
60
40
20
0
-20
2
3
4
5
6
7
10
10
10
10
10
10
90
45
Phase (deg)
0
-45
-90
2
3
4
5
6
7
10
10
10
10
10
10
Frequency (Hz)
• Relative Permeability = pwl($perm,Freq) • Magnetic Loss tangent = pwl($losstan,Freq)
Relative permitivity = 12 Conductivity = 0.5 (S/m)
17 © 2012 ANSYS, Inc.
Resistance
Curve Info Matrix1.R(pri_in,pri_in) Setup1 : LastAdaptive Matrix1.R(sec_in,sec_in) Setup1 : LastAdaptive

STS4DNF60L;中文规格书,Datasheet资料

March 2010Doc ID 6121 Rev 91/12STS4DNF60LN-channel 60 V , 0.045 Ω, 4 A, SO-8STripFET™ Power MOSFETFeatures■Standard outline for easy automated surface mount assembly ■Low threshold driveApplication■Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.Type V DSS R DS(on)I D STS4DNF60L60V<0.055Ω4ATable 1.Device summaryOrder code Marking Package Packaging STS4DNF60L4DF60LSO-8Tape & reelContents STS4DNF60LContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112/12Doc ID 6121 Rev 9STS4DNF60L Electrical ratingsDoc ID 6121 Rev 93/121 Electrical ratingsTable 2.Absolute maximum ratingsSymbol ParameterValue Unit V DS Drain-source voltage (V GS = 0)60V V GS Gate- source voltage± 15V I D Drain current (continuous) at T C = 25 °C 4A I D Drain current (continuous) at T C = 100 °C 2.5A I DM (1)1.Pulse width limited by safe operating area Drain current (pulsed)16A P TOT (2)2.P TOT =1.6 W for single operation T otal dissipation at T C = 25 °C 2W E AS (3)3.Starting T J = 25 °C, I D = 4 A, V DD = 30 VSingle pulse avalanche energy 80mJ T jT stgOperating junction temperature Storage temperature- 55 to 150°CTable 3.Thermal dataSymbolParameterValue Unit Rthj-pcb Thermal resistance junction-pcb D.O.(1)1.When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation62.5°C/WElectrical characteristics STS4DNF60L4/12Doc ID 6121 Rev 92 Electrical characteristics(T C = 25 °C unless otherwise specified)Table 4.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 250 µA, V GS = 060V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 110µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 15 V± 100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 11.72.5V R DS(on)Static drain-source on resistance V GS = 10 V , I D = 2 A V GS = 4.5 V , I D = 2 A0.0450.0500.0550.065ΩΩTable 5.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit g fs Forwardtransconductance V DS =25 V , I D =2 A-25-S C issC oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V , f = 1 MHz, V GS = 0-103014040-pF pF pF Q g Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 48 V , I D = 4 A,V GS = 4.5 V (see Figure 13)-1544-nC nC nCSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 95/12Table 6.Switching timesSymbol ParameterTest conditions Min.Typ.Max.Unit t d(on)t r Turn-on delay time Rise timeV DD = 30 V , I D = 2.2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 12)-1528-ns ns t d(off)t fTurn-off delay time Fall time-4510-ns nsTable 7.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max.Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-416A A V SD (2)2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 4 A, V GS = 0- 1.2V t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 4 A, di/dt = 100 A/µs V DD = 20 V (see Figure 17)-85852ns nC AElectrical characteristics STS4DNF60L6/12Doc ID 6121 Rev 92.1 Electrical characteristics (curves)Figure 2.Safe operating area Figure 3.Thermal impedanceFigure 4.Output characteristics Figure 5.Transfer characteristicsFigure 6.Source-drain diode forwardFigure 7.Static drain-source on resistanceSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 97/12Figure 8.Gate charge vs gate-source voltage Figure 9.Capacitance variationsFigure 10.Normalized gate threshold voltageFigure 11.Normalized on resistance vsTest circuits STS4DNF60L8/12Doc ID 6121 Rev 93 Test circuitsFigure 12.Switching times test circuit forFigure 13.Gate charge test circuitFigure 14.Test circuit for inductive loadFigure 15.Unclamped Inductive load testFigure 16.Unclamped inductive waveformFigure 17.Switching time waveformSTS4DNF60L Package mechanical data 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.Doc ID 6121 Rev 99/12Package mechanical data STS4DNF60L10/12Doc ID 6121 Rev 9分销商库存信息: STMSTS4DNF60L。

常用二极管参数

常用整流二极管参数普通整流二极管参数(一)型号最高反向峰值电压(v) 平均整流电流(a) 最大峰值浪涌电流(a 最大反向漏电流(Ua) 正向压降(V) 外型IN4001 50 1。

0 30 5。

0 1。

0 DO--41IN4002 100 1。

0 30 5。

0 1。

0 DO--41IN4003 200 1。

0 30 5。

0 1。

0 DO--41IN4004 400 1。

0 30 5。

0 1。

0 DO--41IN4005 600 1。

0 30 5。

0 1。

0 DO--41IN4006 800 1。

0 30 5。

0 1。

0 DO--41IN4007 1000 1。

0 30 5。

0 1。

0 DO--41IN5391 50 1。

5 50 5。

0 1。

5 DO--15IN5392 100 1。

5 50 5。

0 1。

5 DO--15IN5393 200 1。

5 50 5。

0 1。

5 DO--15IN5394 300 1。

5 50 5。

0 1。

5 DO--15IN5395 400 1。

5 50 5。

0 1。

5 DO--15IN5396 500 1。

5 50 5。

0 1。

5 DO--15IN5397 600 1。

5 50 5。

0 1。

5 DO--15IN5398 800 1。

5 50 5。

0 1。

5 DO--15IN5399 1000 1。

5 50 5。

0 1。

5 DO--15RL151 50 1。

5 60 5。

0 1。

5 DO--15RL152 100 1。

5 60 5。

0 1。

5 DO--15RL153 200 1。

5 60 5。

0 1。

5 DO--15RL154 400 1。

5 60 5。

0 1。

5 DO--15RL155 600 1。

5 60 5。

0 1。

5 DO--15RL156 800 1。

5 60 5。

0 1。

5 DO--15RL157 1000 1。

5 60 5。

0 1。

5 DO--15普通整流二极管参数(二)型号最高反向峰值电压(v) 平均整流电流(a) 最大峰值浪涌电流(a 最大反向漏电流(Ua) 正向压降(V) 外型RL201 50 2 70 5 1 DO--15RL202 100 2 70 5 1 DO--15RL203 200 2 70 5 1 DO--15RL204 400 2 70 5 1 DO--15RL205 600 2 70 5 1 DO--15RL206 800 2 70 5 1 DO--15RL207 1000 2 70 5 1 DO--152a01 50 2 70 5 1.1 DO--152a02 100 2 70 5 1.1 DO--152a03 200 2 70 5 1.1 DO--152a04 400 2 70 5 1.1 DO--152a05 600 2 70 5 1.1 DO--152a06 800 2 70 5 1.1 DO--152a07 1000 2 70 5 1.1 DO--15 RY251 200 3 150 5 3 DO--27 RY252 400 3 150 5 3 DO--27 RY253 600 3 150 5 3 DO--27 RY254 800 3 150 5 3 DO--27 RY255 1300 3 150 5 3 DO--27 普通整流二极管参数(三)IN5401 50 3 200 5 1 DO--27IN5402 100 3 200 5 1 DO--27 IN5403 150 3 200 5 1 DO--27 IN5404 200 3 200 5 1 DO--27 IN5405 400 3 200 5 1 DO--27 IN5406 600 3 200 5 1 DO--27 IN5407 800 3 200 5 1 DO--27 IN5408 1000 3 200 5 1 DO--27 6a05 50 6 400 10 0.95 R--66a1 100 6 400 10 0.95 R--66a2 200 6 400 10 0.95 R--66a4 400 6 400 10 0.95 R--66a6 600 6 400 10 0.95 R--66a8 800 6 400 10 0.95 R--66a10 1000 6 400 10 0.95 R--6 P600a 50 6 400 10 0.95 R--6P600B 100 6 400 10 0.95 R--6 P600D 200 6 400 10 0.95 R--6 P600G 400 6 400 10 0.95 R--6 P600J 600 6 400 10 0.95 R--6 P600K 800 6 400 10 0.95 R--6 P600M 1000 6 400 10 0.95 R--6普通整流二极管快恢复整流二极管高效率整流二极管特快速整流二极管超快速整流二极管。

SWPA4020S150MT 绕线功率电感规格书

A
B
C
D
Eபைடு நூலகம்
F
a Typ. b Typ. c Typ.
SWPA252010S Fig.1 2.5±0.1 2.0±0.1 1.0 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0
SWPA252012S Fig.1 2.5±0.1 2.0±0.1 1.2 Max. 1.5±0.2 0.80±0.2 0.80±0.2 0.80 0.85 2.0
SWPA6040S Fig.2 6.0±0.3 6.0±0.3 4.0 Max. 4.9±0.3 1.55±0.3 2.9±0.3 2.8
1.7
5.7
SWPA6045S Fig.2 6.0±0.3 6.0±0.3 4.5 Max. 4.9±0.3 1.55±0.3 2.9±0.3 2.8
1.7
5.7
SWPA8040S Fig.3 8.0±0.3 8.0±0.3 4.2 Max. 6.3±0.3 2.00±0.3 4.0±0.3 3.8
2.2
7.5
SWPA8050S Fig.3 8.0±0.3 8.0±0.3 5.0 Max. 6.3±0.3 2.00±0.3 4.0±0.3 3.8
2.2
7.5
SWPA6020S Fig.2 6.0±0.3 6.0±0.3 2.0 Max. 4.9±0.3 1.55±0.3 2.9±0.3 2.8
1.7
5.7
SWPA6028S Fig.2 6.0±0.3 6.0±0.3 2.8 Max. 4.9±0.3 1.55±0.3 2.9±0.3 2.8
1.7
5.7
8040
8.0×8.0×4.0

STP4N150(高压MOS管)

1/11July 2005STP4N150STW4N150N-CHANNEL 1500V - 5Ω - 4A TO-220/TO-247Very High Voltage PowerMESH™ MOSFETTable 1: General Featuress TYPICAL R DS (on) = 5 Ωs AVALANCHE RUGGEDNESS s GATE CHARGE MINIMIZEDs VERY LOW INTRINSIC CAPACITANCES sHIGH SPEED SWITCHINGDESCRIPTIONUsing the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has de-signed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.APPLICATIONSs SWITCH MODE POWER SUPPLIESTable 2: Order CodesTYPE V DSS R DS(on)I D Pw STP4N150STW4N1501500 V 1500 V< 7 Ω< 7 Ω4 A 4 A160 W 160 WSALES TYPE MARKING PACKAGE PACKAGINGSTP4N150P4N150TO-220TUBE STW4N150W4N150TO-247TUBERev. 3STP4N150 - STW4N1502/11Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowedTable 4: Thermal DataTable 5: Avalanche CharacteristicsELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 6: On /OffSymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)1500V V DGR Drain-gate Voltage (R GS = 20 k Ω)1500V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 4A I D Drain Current (continuous) at T C = 100°C 2.5A I DM ( )Drain Current (pulsed)12A P TOT Total Dissipation at T C = 25°C 160W Derating Factor1W/°C T j T stgOperating Junction Temperature Storage Temperature-55 to 150°CTO-220TO-247Rthj-case Thermal Resistance Junction-case Max 0.78°C/W Rthj-ambThermal Resistance Junction-ambient Max62.550°C/WSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)4A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)350mJSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1 mA, V GS = 01500V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating,T C = 125°C 10500µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 30 V± 100nA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 345V R DS(on)Static Drain-source On ResistanceV GS = 10 V, I D = 2 A57Ω3/11STP4N150 - STW4N150ELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.Symbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 30 V , I D = 2 A 3.5S C iss C oss C rss Input Capacitance Output CapacitanceReverse Transfer Capacitance V DS = 25 V, f = 1 MHz, V GS = 0130012012pF pF pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 750 V, I D = 2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 19)35304545ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 600 V, I D = 4 A,V GS = 10 V (see Figure 22)3010950nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)412A A V SD (1)Forward On Voltage I SD = 4 A, V GS = 02V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 4 A, di/dt = 100 A/µs V DD = 45V(see Figure 20)510312ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 4 A, di/dt = 100 A/µs V DD = 45V, T j = 150°C (see Figure 20)650412.6ns µC ASTP4N150 - STW4N1504/11Figure 3: Safe Operating Area For TO-220Figure 6: Thermal Impedance For TO-220STP4N150 - STW4N150Figure 9: TransconductanceFigure 12: Static Drain-source On Resistance5/11STP4N150 - STW4N1506/11Figure 15: Source-Drain Forward Characteris-ticsFigure 17: Normalized BVdss vs TemperatureSTP4N150 - STW4N150Figure 18: Unclamped Inductive Load Test Cir-cuitFigure 19: Switching Times Test Circuit For Resistive Load Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 21: Unclamped Inductive WaveformFigure 22: Gate Charge Test CircuitSTP4N150 - STW4N1508/11STP4N150 - STW4N1509/11STP4N150 - STW4N150Table 9: Revision HistoryDate Revision Description of Changes 11-Mar-20051First release.27-Apr-20052Removed TO-220FP07-Jul-20053Complete version10/11STP4N150 - STW4N150 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America11/11。

变压器规格型号说明

干式变压器；例如，（ＳＣＢ１０－１０００ＫＶＡ／１０ＫＶ／０．４ＫＶ）:Ｓ的意思表示此变压器为三相变压器，如果Ｓ换成Ｄ则表示此变压器为单相。

Ｃ的意思表示此变压器的绕组为树脂浇注成形固体。

Ｂ的意思是箔式绕组，如果是Ｒ则表示为缠绕式绕组，如果是Ｌ则表示为铝绕组，如果是Ｚ则表示为有载调压（铜不标）。

１０的意示是设计序号，也叫技术序号。

１０００ＫＶＡ则表示此台变压器的额定容量（１０００千伏安）。

１０ＫＶ的意思是一次额定电压，０．４ＫＶ意思是二次额定电压。

电力变压器产品型号其它的字母排列顺序及涵义。

（１）绕组藕合方式，涵义分：独立（不标）；自藕（Ｏ表示）。

（２）相数，涵义分：单相（Ｄ）；三相（Ｓ）。

（３）绕组外绝缘介质，涵义分；变压器油（不标）；空气（Ｇ）：气体（Ｑ）；成型固体浇注式（Ｃ）：包绕式（ＣＲ）：难燃液体（Ｒ）。

（４）冷却装置种类，涵义分；自然循环冷却装置（不标）：风冷却器（Ｆ）：水冷却器（Ｓ）。

（５）油循环方式，涵义：自然循环（不标）；强迫油循环（Ｐ）。

（６）绕组数，涵义分；双绕组（不标）；三绕组（Ｓ）；双分裂绕组（Ｆ）。

（７）调压方式，涵义分；无励磁调压（不标）：有载调压抑（Ｚ）。

（８）线圈导线材质，涵义分：铜（不标）；铜箔（Ｂ）；铝（Ｌ）铝箔（ＬＢ）。

（９）铁心材质，涵义；电工钢片（不标）；非晶合金（Ｈ）。

（１０）特殊用途或特殊结构，涵义分；密封式（Ｍ）；串联用（Ｃ）；起动用（Ｑ）；防雷保护用（Ｂ）；调容用（Ｔ）；高阻抗（Ｋ）地面站牵引用（ＱＹ）；低噪音用（Ｚ）；电缆引出（Ｌ）；隔离用（Ｇ）；电容补偿用（ＲＢ）；油田动力照明用（Ｙ）；厂用变压器（ＣＹ）；全绝缘（Ｊ）；同步电机励磁用（ＬＣ）。

不对的地方请各位专家朋友指正。

变压器型号变压器型号一、电力变压器型号说明如下：变压器的型号通常由表示相数、冷却方式、调压方式、绕组线芯等材料的符号，以及变压器容量、额定电压、绕组连接方式组成。

请问下列电力变压器型号代号含义是什么？变压器型号一、电力变压器型号说明如下：变压器的型号通常由表示相数、冷却方式、调压方式、绕组线芯等材料的符号，以及变压器容量、额定电压、绕组连接方式组成。

电源线SPTSJTSVT规格是代表什么意思(终审稿)

电源线S P T S J T S V T 规格是代表什么意思公司内部档案编码：[OPPTR-OPPT28-OPPTL98-OPPNN08]电源线SPT/SJT/SVT规格是代表什么意思???电源线SPT/SJT/SVT规格是代表什么意思(1).美规电线(flexible cord)参考的标准为UL62、UL1581.SPT、SJT、SVTSPT-1:(Service Parallel Thermoplastic)热塑型平行线.最大可生产到20~18AWG(2芯或3芯)SPT-2:最大生产到18~16AWG(2芯或3芯)SPT-3:最大生产到18~10AWG(2芯或3芯) SVT(Service Vacuum thermoplastic):18~16AWG(2芯或3芯) SJT(Service Junior thermoplastic):18~10AWG(2芯~5芯)ST:18-2AWG(2芯或多芯)l 印刷要求:UL规定电线上必须印UL、CSA logo,最低60℃可印也可不印,印字之间距不可超过610mm.l UL E135710<档案>SPT-1 SPT-2 SPT-1W SPT-2W SPT-3 NISPT-1 NISPT-2 SVT SJT SJTW ST STW l CSA LL95937<档案>SPT-1 SPT-2 SPT-3 SVT SJTl UL与CSA对电线的温度对照UL CSA60℃ 60℃75℃ 60℃90℃ 60℃105℃ 105℃(2).欧规电线:(欧共型).2CH harmonized(欧共型)03 300/300V05 300/500V07 450/750VV: PVC insulation.V: Jacket PVC.H2: Flat Non-separate cable.H: Flat Separate cable.F: fine wire-flexible cord.H: Extra-fine wire.U: Solid.R: StrandedCross sectional size of conductors(截面积).(3).目前公司已申请认证的电线: VDE H05V-KH03VH-H 2** H05VV-F 2*H03VV-F 2** H05VV-F 2*H03VV-H2 2** H05VV-F 3*H03VV-F 3G** H05VV-F F3G*H05VV-F 2* H05VVH2-F *2H05VV-F 3G* H05VVH2-F 2*以上线材具体由哪个认证机构授权需查阅相关档案.三. 插头方面(1).美规插头结构,UL498及UL1681中规定(依NEMA) NEMA:(National Electrical Manufacturers Association.)美国电机制造协会.常见的几种:1-15R: 2Pole 2-Wire 125V 15A Receptacle (SF-51)1-15P: 2Pole 2-Wire 125V 15A Plug (SF-21.23.22A) 2-15~30R: 2Pole 2-Wire 250V 15A Receptacle2-15~30P: 2Pole 2-Wire 250V 15A Receptacle5-15~50R: Receptacle Plug (SF-52…)5-15~50P: 2Pole 3-Wire 125V 15A Receptacle ..6-15~50P(R): 2Pole 3-Wire 250V 15A~50A7-15~50P(R): 2Pole 3-Wire 277V 15A~50A10-20~50P(R): 3Pole 3-Wire 125V/250V 20A~50A11-15~50P(R): 3Pole 3-Wire 250V 15A~50Al 插头的检验规范主要依据(817)l 插头中的要求:UL规定:不能出现电流及电压及UL logo;可以出现档案号或公司交易标志.CSA规定:不能出现电流及电压但可以出现CSA logo档案号或公司交易标志.如果制造厂是属予公司需印上分公司代码.(2).欧规插头:A.主要参照IEC 60083及60320规范.B.目前认证:SF-01 SF-81SF-03 SF-82SF-04 (Plug) SF-83 (Connector)SF-05 SF-85ASF-87C.检验规范:Plug ConnectorIEC 60 884 DIN 0625CEE 7 EN 60320EN 50075DIN 0620四. CB与CE的含意(1).CB:(Certification Bodies)认证体系.CB制度是国际电工委员会(IECEE)建立的一套全球性的互认制度.全球有34个国家,45个认证机构参加这一互认制度.(企业从其中一个认证机构获得CB证书后,可以较方便地转换成其它机构的认证证书.由此可以取得进入相关国家市场的准入证.)(2).CE:(European Communities)欧盟委员会CE标示是产品在欧盟境内销售的市场准入证明.标志向进口国海关表示.该产品符合相关的欧盟指令同时欧盟也努力使成员国之间的贸易往来更加顺畅.标志使产品合法进入以下十八国市场:奥地利、比利时、丹麦、芬兰、法国、德国、希腊、冰岛、爱尔兰、意大利、列支敦士登、卢森堡、荷兰、挪威、葡萄牙、西班牙、瑞典、英国.c. CE标志表示产品制造商或进口商所负的责任.制造商或进口商自行宣告其产品符合相关欧盟指令.CE标志并非经由认证机构颁发.d.其它由第三方机构颁发的认证可以与CE标志同时使用,但不能够取代CE标志.标志可以直接标注在产品上,亦可以与CE标注在产品的用户手册或包装上.另:EN60799规定PLUG<欧规>不能够使用“CE”标志等).Connector 或PLUG Connector可以有“CE”标志.电线规格北美线材的线规与国内的表示方法不同，是以“AWG”为单位。

SGL40N150D中文资料

Electrical Characteristics of DIODE T C= 25°C unless otherwise notedI GESG-E Leakage CurrentV GE = V GES , V CE = 0V----± 100nAOn CharacteristicsV GE(th)G-E Threshold Voltage I C = 40mA, V CE = V GE 3.5 5.07.5V V CE(sat)Collector to Emitter Saturation VoltageI C = 40A , V GE = 15V-- 3.74.7VDynamic CharacteristicsC ies Input Capacitance V CE = 10V , V GE = 0V, f = 1MHz--4000--pF C oes Output Capacitance--700--pF C resReverse Transfer Capacitance--300--pFSwitching Characteristicst d(on)Turn-On Delay Time V CC = 600V, I C = 40A,R G = 51Ω, V GE = 15V,Resistive Load, T C = 25°C --90200ns t r Rise Time--230700ns t d(off)Turn-Off Delay Time --245400ns t f Fall Time--230400ns Q g Total Gate Charge V CE = 600V, I C = 40A,V GE = 15V--140170nC Q ge Gate-Emitter Charge --2525nC Q gcGate-Collector Charge--4560nCSymbol ParameterTest ConditionsMin.Typ.Max.Units V FM Diode Forward Voltage I F = 10A-- 1.3 1.8V t rrDiode Reverse Recovery TimeI F = 10A, di/dt = 200A/us--170300nsTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.STAR*POWER is used under licenseACEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™SPM™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™。

ANSYS仿真技术驱动高性能电源产品研发

Import Icepak project.
Fitting process
Z th ( t ) T T Tref P P
Thermal network
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© 2014 ANSYS, Inc.
May 4, 2014
IGBT/MOSFET 开关和热特性分析： Simplorer
环境温度为25C 模块温度
May 4, 2014
变压器电磁场分析： Maxwell
非标磁性元器件：平面变压器 • Ferrite PQ Core • Primary turns = 4 • Secondary turns = 2 • Insulation layers between conductors • Fundamental Frequency = 100kHz
Normal mode interference test
5 © 2014 ANSYS, Inc. May 4, 2014
共模、差模滤波电路设计： Simplorer
Physical-based(1) Physical-based(2)
Non-ideal(1)
Non-ideal(2)
ideal
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© 2014 ANSYS, Inc.
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© 2014 ANSYS, Inc.
May 4, 2014
电源系统 EMI/EMC 分析： HFSS
• 频率30MHz时的机箱内外场分布图 • 系统布局及机箱屏蔽效果分析 • 在机箱接口处的孔缝是电磁辐射泄露的主要原因
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© 2014 ANSYS, Inc.
May 4, 2014
电磁部件精确设计： Maxanyuanban1_ff