LFDS060中文资料

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ESC60HREF中文资料(List Unclassifed)中文数据手册「EasyDatasheet - 矽搜」

68.58 73.66 76.20 86.36 88.90 99.06
106.68 109.22 121.92 124.46 129.54 149.86
B
+_ 0.20
12.70 15.24 17.78 20.32 22.86
27.94 33.02 35.56 40.64 45.72 48.26
50.80 53.34 58.42 60.96 66.04 68.58
间隙
＃4螺丝
间隙
孔（H）
螺纹
INSERT (I)
浮动
BOBBIN (F)
否安装耳
(N)
.125 [3.18] .135 [3.43]
侧面安装
(S)
芯片中文手册,看全文,戳
材料（绝缘层/触点）
E = PBT /磷青铜（标准） H = PBT /铍铜 R = PPS /磷青铜 A = PPS /铍铜
A
+_.008
0.300 0.400 0.500 0.600 0.700
0.900 1.100 1.200 1.400 1.600 1.700
1.800 1.900 2.100 2.200 2.400 2.500
2.700 2.900 3.000 3.400 3.500 3.900
4.200 4.300 4.800 4.900 5.100 5.900
17.15 24.77
19.69 27.31
22.23 29.85
24.77 32.39
27.31 34.93
32.39 40.01
37.47 45.09
40.01 47.63
45.09 52.71
50.17 57.79

EPA060资料

ExcelicsEPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETFeatures• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER• 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB TYPICAL NOISE FIGURE AT 2GHz• 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si 3N 4 PASSIVATION• ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITYApplications• High Dynamic Range LNA • DC to 18 GHzELECTRICAL CHARACTERISTICS (T a = 25 O C)SYMBOLS PARAMETERS/TEST CONDITIONS MIN TYP MAX UNITP 1dB Output Power at 1dB Compression f=2GHzVds=6V, Ids=50% Idss f=12GHz24.0 26.0 25.5 dBm G 1dB Gain at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz 17.0 7.0 19.0 9.0dB PAE Power Added Efficiency at 1dB Compression f=2GHz Vds=6V, Ids=50% Idss f=12GHz 5545% IP3 +5dBm P OUT /Tone (5V/50mA) f=2GHz (5V/90mA) 2831dBm NFNoise Figure (5V/50mA) f=2GHz(5V/90mA)0.4 0.6 dB G A Associated Gain (5V/50mA) f=2GHz(5V/90mA) 20.0 20.0 dB Idss Saturated Drain Current Vds=3V, Vgs=0V 110180250mA Gm Transconductance Vds=3V, Vgs=0V 120 190 mS Vp Pinch-off Voltage Vds=3V, Ids=2.0mA -1.0 -2.5 V BVgd Drain Breakdown Voltage Igd=1.0mA -10 -15 V BVgsSource Breakdown Voltage Igs=1.0mA-6-14VRthThermal Resistance 175* oC/W * Overall Rth depends on case mounting.MAXIMUM RATINGS AT 25O CSYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 VdsDrain-Source Voltage 10V6V VgsGate-Source Voltage -6V -3V IdsDrain Current Idss 110mA Igsf Forward Gate Current 30mA 5mAPin Input Power 23dBm@ 3dB CompressionTch Channel Temperature 175oC 150 o C TstgStorage Temperature-65/175o C -65/150 o CPtTotal Power Dissipation 780mW 650mWNote: 1 Exceeding any of the above ratings may result in permanent damage.2. Exceeding any of the above ratings may reduce MTTF below design goals.Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: All Dimensions In mils.66'*$O O /H D G V0L QEPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETTypical PerformanceNoise Figure &IP3S-PARAMETERS6V, 1/2 IdssFREQ --- S11 ------ S21 ------ S12 ------ S22 ---(GHz) MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.863 -58.2 12.375 135.5 0.026 63.8 0.523 -24.4 2.0 0.696 -101.1 9.063 104.4 0.039 49.7 0.433 -41.0 3.0 0.604 -132.0 6.850 82.3 0.049 43.5 0.388 -51.9 4.0 0.555 -159.5 5.508 63.6 0.055 39.1 0.360 -60.8 5.0 0.538 177.3 4.614 47.0 0.065 35.5 0.322 -70.3 6.0 0.534 160.5 4.002 31.8 0.074 30.5 0.288 -84.5 7.0 0.533 141.8 3.532 16.7 0.083 25.3 0.281 -98.4 8.0 0.540 125.9 3.168 2.3 0.092 19.2 0.254 -111.5 9.0 0.582 105.0 2.817 -12.9 0.101 11.6 0.235 -125.6 10.0 0.622 88.1 2.532 -28.1 0.108 2.7 0.220 -148.1 11.0 0.642 74.5 2.370 -43.9 0.119 -8.1 0.225 -176.6 12.0 0.674 60.3 2.195 -60.1 0.129 -19.3 0.238 155.7 13.0 0.727 47.7 1.970 -74.8 0.132 -30.2 0.244 130.0 14.0 0.764 36.4 1.758 -88.3 0.133 -40.6 0.263 110.6 15.0 0.776 22.6 1.618 -104.8 0.137 -54.2 0.316 90.1 16.0 0.790 8.5 1.441 -122.5 0.134 -69.5 0.358 66.2 17.0 0.781 -1.1 1.285 -135.3 0.133 -78.3 0.363 51.0 18.0 0.792 -9.8 1.221 -147.7 0.144 -91.0 0.396 41.9 19.0 0.811 -22.2 1.106 -163.8 0.142 -106.2 0.418 23.9 20.0 0.836 -32.5 1.016 -179.0 0.144 -121.0 0.445 6.7 21.0 0.800 -41.8 0.975 166.9 0.157 -134.6 0.461 -8.4 22.0 0.761 -54.5 0.941 152.3 0.176 -148.9 0.426 -22.5 23.0 0.800 -68.3 0.861 134.7 0.190 -167.5 0.399 -50.3 24.0 0.799 -80.2 0.764 117.1 0.204 173.5 0.417 -78.5 25.0 0.719 -98.1 0.751 103.1 0.239 157.7 0.451 -87.9 26.0 0.718 -119.4 0.750 85.7 0.291 137.6 0.450 -110.4EPA060B-70 @5V, 2GHz(P OUT /Tone = 5dBm)00.20.40.60.8020406080100120140Ids [mA]N F [d B ]10203040I P 3 [d B m ]NF IP3EPA060B-70DATA SHEETHigh Efficiency Heterojunction Power FETS-PARAMETERS5V,50maFREQ --- S11 --- --- S21 --- --- S12 --- --- S22 ---(GHz) MAG ANG MAG ANG MAG ANG MAG ANG1.0 0.948 -57.7 14.366 129.2 0.032 54.0 0.439 -48.42.0 0.739 -100.4 9.162 106.8 0.042 45.1 0.438 -44.93.0 0.656 -132.4 7.008 84.9 0.050 36.7 0.392 -56.74.0 0.619 -155.0 5.629 67.5 0.056 31.8 0.352 -64.75.0 0.597 -176.9 4.740 51.0 0.062 26.9 0.298 -74.46.0 0.577 162.1 4.086 35.5 0.069 22.1 0.284 -90.67.0 0.580 141.7 3.546 21.4 0.075 18.2 0.287 -96.48.0 0.616 122.1 3.145 6.6 0.081 11.3 0.264 -103.59.0 0.618 117.3 2.918 -7.4 0.088 4.0 0.148 -131.410.0 0.633 99.5 2.657 -22.4 0.097 -1.1 0.185 -169.411.0 0.673 76.6 2.345 -36.9 0.101 -10.0 0.208 -168.312.0 0.718 63.1 2.142 -50.5 0.108 -18.0 0.156 179.213.0 0.761 59.0 1.999 -65.3 0.117 -27.9 0.223 117.814.0 0.777 44.3 1.767 -81.5 0.118 -40.9 0.321 97.015.0 0.779 30.7 1.543 -91.8 0.115 -46.4 0.287 96.416.0 0.816 14.8 1.418 -107.4 0.117 -59.0 0.265 77.717.0 0.827 11.9 1.307 -123.3 0.121 -70.7 0.445 49.218.0 0.822 2.7 1.114 -132.8 0.114 -77.5 0.460 49.819.0 0.852 -9.8 1.090 -144.6 0.123 -87.1 0.424 38.220.0 0.868 -19.9 1.001 -158.4 0.122 -99.4 0.442 21.521.0 0.846 -31.4 0.911 -174.9 0.120 -114.7 0.576 9.422.0 0.838 -32.7 0.856 176.8 0.125 -121.6 0.515 9.923.0 0.860 -47.9 0.832 160.7 0.130 -137.4 0.446 -22.924.0 0.835 -66.2 0.763 141.8 0.128 -156.0 0.536 -40.825.0 0.819 -80.1 0.710 126.8 0.130 -170.6 0.536 -41.426.0 0.868 -78.4 0.699 111.8 0.145 174.2 0.383 -78.0EPA060B-70Noise ParametersVds=5V, Ids=50mAFreq. Gamma Opt Nfmin(GHz) (MAG) (ANG) (dB) Rn/502 0.46 44 0.45 0.114 0.35 96 0.55 0.086 0.23 165 0.75 0.068 0.27 -145 0.92 0.0810 0.35 -85 1.37 0.2312 0.46 -58 1.47 0.4414 0.58 -33 1.92 0.8916 0.68 -6 2.47 1.318 0.63 7 3.03 1.7820 0.68 33 3.24 1.8722 0.63 50 3.43 1.8124 0.67 92 3.65 1.5626 0.72 120 3.86 1.16。

FDP060AN08A0_NL中文资料

•Qualified to AEC Q101Formerly developmental type 82680•Distributed Power Architectures and VRMs •Primary Switch for 24V and 48V systemsMOSFET Maximum Ratings T C = 25°C unless otherwise notedThermal CharacteristicsThis product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For acopy of the requirements, see AEC Q101 at: /Reliability data can be found at: /products/discrete/reliability/index.html.All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systemscertification.Symbol ParameterRatings Units V DSS Drain to Source Voltage 75V V GSGate to Source Voltage ±20V I DDrain Current80A Continuous (T C < 127o C, V GS = 10V)Continuous (T amb = 25o C, V GS = 10V, with R θJA = 43o C/W)16A PulsedFigure 4A E AS Single Pulse Avalanche Energy (Note 1)350mJ P D Power dissipation 255W Derate above 25oC1.7W/o CT J , T STGOperating and Storage T emperature-55 to 175oCR θJC Thermal Resistance Junction to Case TO-220,TO-2630.58o C/W R θJA Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)62o C/W R θJAThermal Resistance Junction to Ambient TO-263, 1in 2copper pad area43oC/WDGSTO-263AB FDB SERIESGATESOURCEDRAIN (FLANGE)TO-220AB FDP SERIESDRAIN DRAIN GATESOURCE (FLANGE)Dynamic CharacteristicsSwitching Characteristics (V GS = 10V)Drain-Source Diode CharacteristicsNotes:1:Starting T J = 25°C, L = 109µH, I AS = 80A.2:Pulse width = 100sr DS(ON)Drain to Source On ResistanceΩI D = 40A, V GS = 6V -0.00660.010I D = 80A, V GS = 10V , T J = 175o C-0.0100.013C ISS Input Capacitance V DS = 25V, V GS = 0V,f = 1MHz -5150-pF C OSS Output Capacitance-800-pF C RSS Reverse T ransfer Capacitance -230-pF Q g(TOT)T otal Gate Charge at 10V V GS = 0V to 10V V DD = 40V I D = 80A I g = 1.0mA7395nC Q g(TH)Threshold Gate Charge V GS = 0V to 2V-1013nC Q gs Gate to Source Gate Charge -29-nC Q gs2Gate Charge Threshold to Plateau -19-nC Q gdGate to Drain “Miller” Charge-16-nCt ON T urn-On Time V DD = 40V , I D = 80A V GS = 10V, R GS = 3.9Ω--147ns t d(ON)T urn-On Delay Time -19-ns t r Rise Time-79-ns t d(OFF)T urn-Off Delay Time -37-ns t f Fall Time -38-ns t OFFT urn-Off Time--113nsV SD Source to Drain Diode Voltage I SD = 80A -- 1.25V I SD = 40A-- 1.0V t rr Reverse Recovery Time I SD = 75A, dI SD /dt = 100A/µs --37ns Q RRReverse Recovered ChargeI SD = 75A, dI SD /dt = 100A/µs--38nCAmbient TemperatureCase TemperatureFigure 3. Normalized Maximum Transient Thermal ImpedanceFigure 4. Peak Current Capability0.1110-510-410-310-210-11001010.012t, RECTANGULAR PULSE DURA TION (s)Z θJ C , N O R M A L I Z E D T H E R M A L I M P E D A N C ENOTES:DUTY FACTOR: D = t 1/t 2PEAK T J = P DM x Z θJC x R θJC + T CP DMt 1t 20.50.20.10.050.010.02DUTY CYCLE - DESCENDING ORDER SINGLE PULSE1001000200070I D M , P E A K C U R R E N T (A )t, PULSE WIDTH (s)10-510-410-310-210-1100101T C = 25o CI = I 25175 - T C 150FOR TEMPERATURES ABOVE 25o C DERATE PEAK CURRENT AS FOLLOWS:TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGIONV GS = 10VCapabilityFigure 7. Transfer CharacteristicsFigure 8. Saturation CharacteristicsFigure 9. Drain to Source On Resistance vs DrainCurrent Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature025*******1251501753.54.0 4.55.0 5.56.0I D , D R A I N C U R R E N T (A )V GS , GATE TO SOURCE VOLTAGE (V)PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V DD = 15VT J = 175o CT J = 25o CT J = -55o C2550751001251501750.51.01.52.0I D , D R A I N C U R R E N T (A )V DS , DRAIN TO SOURCE VOLTAGE (V)V GS = 6VPULSE DURATION = 80µs DUTY CYCLE = 0.5% MAXV GS = 5VT C = 25o CV GS = 10VV GS = 7V4.04.55.05.56.06.57.07.5020406080I D , DRAIN CURRENT (A)V GS = 6VV GS = 10VD R A I N T O S O U R CE O N R E S I S T A N C E (m Ω)PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX0.51.01.52.02.5-80-4004080120160200N O R M A L I Z E D D R A I N T O S O U R C E T J , JUNCTION TEMPERATURE (o C)O N R E S I S T A N C EV GS = 10V, I D = 80APULSE DURATION = 80µs DUTY CYCLE = 0.5% MAXJunction TemperatureBreakdown Voltage vs Junction TemperatureFigure 13. Capacitance vs Drain to SourceVoltage Figure 14. Gate Charge Waveforms for ConstantGate Current10010000.1110700075C , C A P A C I T A N C E (p F )V DS , DRAIN TO SOURCE VOLTAGE (V)V GS = 0V , f = 1MHz C ISS = C GS + C GDC OSS ≅ C DS + C GDC RSS = C GD24681020406080V G S , G A T E T O S O U R C E V O L T A G E (V )Q g , GATE CHARGE (nC)V DD = 40VI D = 80A I D = 16AWAVEFORMS INDESCENDING ORDER:FDB060AN08A0 / FDP060AN08A0Thermal Resistance vs. Mounting Pad AreaThe maximum rated junction temperature, T JM , and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, P DM , in an application. Therefore the application’s ambient temperature, T A (o C), and thermal resistance R θJA (o C/W)must be reviewed to ensure that T JM is never exceeded.Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part.In using surface mount devices such as the TO-263package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation ratings. Precise determination of P DM is complex and influenced by many factors:1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board.2. The number of copper layers and the thickness of the board.3. The use of external heat sinks.4. The use of thermal vias.5. Air flow and board orientation.6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part,the board and the environment they are in.Fairchild provides thermal information to assist the designer’s preliminary application evaluation. Figure 21defines the R θJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Fairchild device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve.Thermal resistances corresponding to other copper areas can be obtained from Figure 21 or by calculation using Equation 2 or 3. Equation 2 is used for copper area defined in inches square and equation 3 is for area in centimeters square. The area, in square inches or square centimeters is the top copper area including the gate and source pads.(EQ. 1)P DM T JM T A–()R θJA-----------------------------=Area in Inches Squared(EQ. 2)R θJA26.5119.840.262Area +()------------------------------------+=(EQ. 3)RθJA26.511281.69Area +()---------------------------------+=Area in Centimeters SquaredFigure 21. Thermal Resistance vs MountingPad Area204060801100.1R θJA = 26.51+ 19.84/(0.262+Area) EQ.2R θJ A (o C /W )AREA, TOP COPPER AREA in 2 (cm 2)(0.645)(6.45)(64.5)R θJA = 26.51+ 128/(1.69+Area) EQ.3RLdrain 2 5 10RLsource 3 7 50Mmed 16 6 8 8 MmedMOD Mstro 16 6 8 8 MstroMODMweak 16 21 8 8 MweakMOD Rbreak 17 18 RbreakMOD 1Rdrain 50 16 RdrainMOD 9e-4Rgate 9 20 1.4RSLC1 5 51 RSLCMOD 1e-6RSLC2 5 50 1e3Rsource 8 7 RsourceMOD 3e-3Rvthres 22 8 RvthresMOD 1Rvtemp 18 19 RvtempMOD 1S1a 6 12 13 8 S1AMOD S1b 13 12 13 8 S1BMOD S2a 6 15 14 13 S2AMOD S2b 13 15 14 13 S2BMODVbat 22 19 DC 1ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*350),5))}.MODEL DbodyMOD D (IS=2E-11 N=1.04 RS=1.76e-3 TRS1=2.7e-3 TRS2=1e-6+ CJO=3.2e-9 M=5.6e-1 TT=3e-10 XTI=3.9).MODEL DbreakMOD D (RS=3e-1 TRS1=1e-3 TRS2=-8.9e-6).MODEL DplcapMOD D (CJO=1.56e-9 IS=1e-30 N=10 M=0.53).MODEL MmedMOD NMOS (VTO=3.6 KP=6 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=1.4).MODEL MstroMOD NMOS (VTO=4.22 KP=220 IS=1e-30 N=10 TOX=1 L=1u W=1u).MODEL MweakMOD NMOS (VTO=3 KP=0.03 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=14 RS=0.1) .MODEL RbreakMOD RES (TC1=9.4e-4 TC2=-9e-7).MODEL RdrainMOD RES (TC1=2.2e-2 TC2=6e-5).MODEL RSLCMOD RES (TC1=2e-3 TC2=1e-5).MODEL RsourceMOD RES (TC1=1e-3 TC2=1e-6).MODEL RvthresMOD RES (TC1=-6e-3 TC2=-1.6e-5).MODEL RvtempMOD RES (TC1=-2.4e-3 TC2=1e-6).MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-8 VOFF=-5).MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5 VOFF=-8).MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4 VOFF=-3.5).MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-4).ENDSNote: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options ; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.6858+-RBREAKRVTEMP VBAT RVTHRESIT17181922121315S1BS2BCACB EGSEDS1481381413+-+-spe.ebreak n11 n7 n17 n18 = 82.1spe.eds n14 n8 n5 n8 = 1spe.egs n13 n8 n6 n8 = 1spe.esg n6 n10 n6 n8 = 1spe.evthres n6 n21 n19 n8 = 1spe.evtemp n20 n6 n18 n22 = 1i.it n8 n17 = 1l.lgate n1 n9 = 5.3e-9l.ldrain n2 n5 = 1.0e-9l.lsource n3 n7 = 5e-9res.rlgate n1 n9 = 53res.rldrain n2 n5 = 10res.rlsource n3 n7 = 50m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1=9.4e-4,tc2=-9e-7res.rdrain n50 n16 = 9e-4, tc1=2.2e-2,tc2=6e-5res.rgate n9 n20 = 1.4res.rslc1 n5 n51 = 1e-6, tc1=2e-3,tc2=1e-5res.rslc2 n5 n50 = 1e3res.rsource n8 n7 = 3e-3, tc1=1e-3,tc2=1e-6res.rvthres n22 n8 = 1, tc1=-6e-3,tc2=-1.6e-5res.rvtemp n18 n19 = 1, tc1=-2.4e-3,tc2=1e-6sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmodv.vbat n22 n19 = dc=1equations {i (n51->n50) +=iscliscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/350))** 5))}}1822+-8171868+-58+-RBREAKRVTEMPVBAT RVTHRESIT17181922121315S1AS1BS2A S2BCACB EGSEDS1481381413EBREAKRSOURCESOURCE73LSOURCE RLSOURCE CIN8MMEDMSTRO 1GATERGA TE EVTEMP9LGATERLGATE20+-+-6{ctherm.ctherm1 th 6 =9.6e-3ctherm.ctherm2 6 5 =9.7e-3ctherm.ctherm3 5 4 =9.8e-3ctherm.ctherm4 4 3 =1e-2ctherm.ctherm5 3 2 =3e-2ctherm.ctherm6 2 tl =9e-2rtherm.rtherm1 th 6 =3.2e-3rtherm.rtherm2 6 5 =8.1e-3rtherm.rtherm3 5 4 =2.3e-2rtherm.rtherm4 4 3 =1.2e-1rtherm.rtherm5 3 2 =1.5e-1rtherm.rtherm6 2 tl =1.6e-1}RTHERM4RTHERM6RTHERM5CTHERM4CTHERM6CTHERM5tl 234CASERev. I1TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™Datasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.元器件交易网。

尼克尔铅皮 brass 推动连接ittings 对工业应用系统 LF3200 Legris说明书

nickel-plated brass push-to-connect fittings for industrial applicationssystem LF3200Legris has put its years of experience as a leader in the connection market into the development of this performing brass push-to-connect forged fitting. The LF3200 rangeprovides pneumatic connections in aggressive applications and harsh environments.LF3200 is suitable for compressed air (lubricatedor non-lubricated). The fitting is designed to perform in particularly harsh (e.g. weld-splatter) or abusive(e.g. steel-toed boot) environments. Tubing compatibility:Polyurethane and Nylon. Metal tubing may be used with specific preparation.Chemical Nickel-Plating:For applications where the fitting is exposed to aggressive environments, better plating is required. Legris uses high phosphorous electroless nickel-plating for the LF3200 fitting range.The electroless nickel-plating has a dull, flat finish. Itadheres to more of the surface, such as in the root of the threads and grooves of the collet. It has better resistance to water, harsh detergents and other aggressive fluids and environments. As a result, the LF3200 series offers superior chemical, corrosion and abrasive resistance.principle of system LF3200All items in the LF3200 range are SILICONE FREEsuitable fluids compressed air up to 290 psi5˚F to 180˚Fworking pressure working temperaturematerials of constructionmaximumtightening torque for LF3200fittings:This depends on the nature and thickness of the tube, surrounding temperature and that of the fluid used.technical specificationselectroless nickel-platedbackup washernitrile ”O “ ringcompatible with nylon and polyurethanecompatible with stainless steel and copper tubing (when grooved p/n 3800 70 00)electroless metal (nickel-plated brass)release buttonelectroless nickel-plated brass bodybody:electroless nickel-plated brass“O” ring:nitrilebackup washer: electroless nickel-plated brass base:electroless nickel-plated brass with thread sealant on tapered components in. lb1370100250308thread sealant on tapered componentsUNF 1/8"1/4"3/8"1/2"UNF &NPT thread C2resistance to aggressive environments and fluidstried and tested technologycompatible tubingadvantages system LF3200for compressed air•instant manual connection and disconnection – no tools required•semi-rigid nylon •flexible polyurethane•high phosphorous electroless nickel-plating •all nickel-plated construction- body - push button - base- backup washerindustrial applications•LF3200 is suitable for many applications such as:- robotics- packaging equipment/machines - textile machinery- semi-conductor equipment - auto process (within auto industry)- pulp and paper - printingC3applicationsC432153209327532083203329832933206320232043216the complete range of LF3200 push-to-connect fittingstaper Page C6taper Page C7taper Page C6taper Page C8taper Page C8UNFPage C8UNFPage C8Page C9Page C9Page C9threaded fittings tube to tube fittings Page C93266Page C93299UNFPage C73201UNFPage C6C5C63215female connector 3275male connector — 3201male connector —C73209male elbow — fractional inch 3299male elbow — fractional inchC83293male run tee — fractional inch 3298male branch tee —32083203male branch tee —male run tee — fractional inchC93216bulkhead connector —fractional inch tube to tube3206straight union —fractional inch3202union elbow —fractional inch3204union tee —fractional inch3266plug-in reducer —tube to tube fittingsnickel-plated brasspush-to-connect fittings for liquid, gas and food processingindustry system LF3600Legris, inventors of the push-to-connect fitting, have earned a reputation as the leading specialist in push-to-connect fitting technology. Legris has employed over 30 years of experience in the research and development of the LF3600 range. LF3600extends Legris ‘know-how’ from pneumatics to other industrial-applications.The principle of the connection is the same. Instant manual connection and disconnection. No need for special tools.Made of nickel-plated brass and fitted with a FKM ”O“ ring protected by a washer, LF3600 forged fittings may be used with all liquid and gaseous fluids compatible with these components, materials and temperatures up to 250°F (depending on the tube material).Chemical Nickel-Plating:For applications where the fitting is exposed to aggressive environments, better plating isrequired. Legris uses high phosphorous electroless nickel-plating for the LF3600 fitting range.The electroless nickel-plating has a dull, flat finish. It adheres to more of the surface, such as in the root of the threads and grooves of the collet. It has better resistance to water, harsh detergents and other aggressive fluids and environments. As a result, the LF3600 series offers superior chemical, corrosion and abrasive resistance.All materials, seals, and plating can come in contact with food.For the quality and cleanliness of the LF3600 products, they are placed in sealed bags inside a Legris box.nickel-plated brass backup washerFKM ”O “ringspring colletcompatible with nylon polyurethane, polyethyleneand FEP 140 tubingworking temperatureAll items in the LF3600 rangeare SILICONE FREEThis depends on the nature and thickness of the tube, on surrounding temperature and that of the fluid used.technical specificationfrom -4°to 250°F . The allowable working temperature depends on the type of tube used.working pressure7 to 290 psi. The maximum pressure of the circuit depends on the type of tube used.suitable fluidsall liquids and gases compatible with the materials of the fitting.Examples: food fluids, cleaning/cold & hot water, steam, oils …materialsof constructionmaximumtightening torque for LF3600 fittings,BSPP threads and M5:(with 0602 sealing washer)nickel-plated brass bodyM5G1/8"G1/4"G3/8"G1/2"x 0.81470100266300principle of system LF3600for liquids and gasesparallel threadin. lb D2compatible with stainless steel and copper tubing (when grooved p/n 3800 70 00)body:high phosphorus FDAchemical nickel-plated brassbackup washer:high phosphorus FDAchemical nickel-plated brassspring collet:high phosphorus FDAchemical nickel-plated brass“O” ring:FKM (FPM) fluoroelastomerconforming to FDA standardbase:high phosphorus FDAchemical nickel-plated brass Thread sealant does not come on these products. This is so that the appropriate sealant for the application can be applied.close spacing of LF3600 productsadvantages of system LF3600for liquids and gases5/321/8.575/321/4.691/41/8.631/41/4.691/43/8.793/81/4.833/83/8.893/81/2 1.001/23/8.931/21/2 1.00C L min NPT in ØD inD3increased performance•excellent resistance to abrasion and corrosion due to high phosphorus chemical nickel-plating individually deposited on brass components.•working temperature from –4°to + 25°F due to “all metal ”components (except o-ring)•full flow fluid passage , minimal pressure drop•automatic sealing of BSPP and metric versions via a captive seal at base•backup washer protects the o-ringwide range•multiple configurations and accessories•from 5/32" to 1/2" O.D. and 4mm to 14 mm O.D.•NPT, BSP taper, BSP parallel and metric threads •ideal for many types of tubing •inch to metric tube adapterscompactness and aestheticsEach model has been redesigned to meet all requirements :•compactness due to small overall dimension s with inter-connectability for configurations pictured above •aesthetic with modernized external shapestime saving connection and disconnection•instant manual connection and disconnection •easy installationnumerous applications•suited to many industries including the food industry :-numerous suitable fluids (food fluids, cleaning / hot and cold water, steam, oil …)- components and chemical nickel coating conforming to FDA standardOur production process includes individual unit quality control and dating,for all LF 3600 push-to-connect fittings, in order to guarantee their quality and traceability.system LF3600 for liquids and gasesD43675360136813614360936693629360036993608360336983693360636023604361636363639366636683667312236203126the complete range of LF3600 push-to-connect fittingstaper Page D6UNF , parallel and metric Page D7metric Page D7parallel and metric Page D7taper Page D8parallel Page D8taper Page D8Page D9UNF , parallel and M5Page D9taperPage D10taperPage D10UNF , parallel and metric Page D11UNF , parallel and metric Page D11Page D12Page D12Page D12threaded fittings tube to tube fittingsPage D13parallel Page D13Page D13bulkhead connectors Page D14Page D14Page D14Page D15Page D153120Page D15Page D153626Page D15accessories D53621taper Page D63631parallel and metric Page D73618banjo bodyparallel and metric Page D113622Page D15D63675male connector —3675male connector —3621male stud standpipe — metric tube to BSPTYou will also find the LF 3600 push-to-connect fittings on the on-line catalog of our web site for both inch and metric tubes. ’s advantage pointsD7360136813614male connector —male connector —female connectorfractional inch= suitable for food applications3631male standpipe —D8360936693629male elbow — metric extended male elbow extended male elbow 3609male elbow — fractional inch = suitable for food applicationsD936993600male elbow — tube to UNF, BSPP or M5If the nylon sealing washers are incompatible with the application, system LF3600 may be used with copper washer 0138.Details on this washer can be found in the Accessories section of this catalog, section H.cartridgePlease contact us to discuss the choice of material into which the cartridge will be inserted.The use of this cartridge•avoids the need to cut threads •permits the part to be press fitted•enables instant tube connection and disconnectionfractional inch36990420IdentificationPart numbers have been chosen by a method of mnemonics.Each LF3600 fitting is identified by: •product type•the outside diameter of the tube •the thread code or second tube O.D.Example of numbering systemproducttypethread code or second tube O.D.tube O.D.= suitable for food applicationsD1036033608male branch tee —male run tee — fractional inch tube to tube to NPT3608male branch tee —3603male run tee — metric36983693male branch tee —male run tee — tube to tube to UNF, BSPP or M5fractional inch360636023604tube to tube fittingsstraight union — metric union elbow — metric union tee — metric 3606straight union — fractional inch 3602union elbow — fractional inch 3604union tee — fractional inch361636363639bulkhead connectorsbulkhead connector 3616bulkhead connector female bulkhead connector bulkhead elbow —Fittings will orientate about the body for positioning purpose.366636683667This catalog includes details of a range of brass accessories compatible with LF3600.Please refer to the Accessories section H.plug-in reducer — metricplug-in expander — metricplug-in — metric /inch adapterLF3600 push-to-connect fittings allow connection with various types of tubing presented in this catalog:•flexible polyurethane tube 1/8" to 1/2" O.D. – page M114mm to 14mm O.D. – page M13•low density polyethylene 1/8" to 1/2" O.D. – page M154mm to 12mm O.D. – page M15•fluoropolymer FEP140 tube 1/8" to 1/2" O.D. – page M164mm to 12mm O.D. – page M16•semi-rigid nylon tube1/8" to 1/2" O.D. – page M74mm to 14mm O.D. – page M936203626double male unionplug —metric3120double male unionDimensions for ØD2 are I.D. of the tube.*nickel-plated brass3122barbed connector3126plug —fractional inch3622plug-in barbed connector。

STD60中文资料

s
tgd typ. 100 Limit
10
3 x STD/SDT60
1 10
100 IG
mA
1000
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
o
IT, IF=200A; TVJ=25 C For power-loss calculations only (TVJ=125oC)
o
o
TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM
1.5 1.6 100 200 0.2 10 450 200 2 150 100 24 0.45 0.225 0.65 0.325 12.7 9.6 50
mA 104
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 4 Gate trigger characteristics
1000 TVJ = 25 C
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=3A/us typ.

S1800F-60.0000中文资料

SaRonix Crystal Clock OscillatorS1800 / S1803 / S1850 Series Technical Data3.3 & 5V, HCMOS, TTL, SMDDS-181 REV F01(T) = Tape & Reelfull reel increments onlyFrequency Range:Frequency Stability:±25, ±50, ±100 ppm over all conditions; calibration, tolerance,operating temperature, input voltage change, load change, aging(1 Year @ 25°C average ambient temperature), shock and vibration.1.5440 MHz to 80 MHzTemperature Range:Operating:Storage:Supply Voltage:-10 to +70°C or -40 to +85°C-55 to +125°C+5.0V ±10%, 3.3V ±10%Supply Current:DescriptionThe 5V S1800, S1850 and 3.3V S1803are crystal-controlled, low-current os-cillators providing precise rise and falltimes to drive high speed CMOS andTTL loads. The sub-miniature, verylow profile leadless ceramic packageshave gold-plated contact pads, idealfor today's pick-and-place SMT envi-ronments. The S1850 is a high outputload version available to 80 MHz.ACTUAL SIZES180025mA max35mA max10µA maxS180315mA max18mA max25mA max10µA maxS185027mA max35mA max75mA max1.544 to 32 MHz:32+ to 50 MHz:50+ to 80 MHz:1.544 to 50 MHz (standby):1.544 to 80 MHz (standby):Standby Current:10µA max on S1800 and S1803 onlyOutput:Symmetry:Rise & Fall Times:Logic 0:Logic 1:Load:45/55% max @ 50% V DD, 40/60% max @ 1.5V on S1800 & 18507ns max (10ns max: S1800) 20% to 80% V DD, 1.544 to 50 MHz5ns max, 50+ to 80 MHz (S1803 & S1850 only)10% V DD max90% V DD minApplications & Features••••••Sub-miniature, 1.1 mm high ceramicpackage ideal for SMT applications10µA max standby mode on S1800and S1803Available as 3.3V and 5V versionsCMOS, HCMOS & TTL compatiblePerfect for PC's; notebook, palmtopcomputers; portable applications;PCMCIA cards;disc drives. Anywheresmall size, low power, surfacemountability are a priorityAvailable on tape & reel; 16mm tape,1000pcs per reelSolder Reflow GuideReflow 240 maxPreheat 183 ±10°C4°C/sec maxTemperature–°C4°C/sec max1 –2 minutes10 sec maxTime150200250CoolingS1800/S1803:S1850:15 pF max, 10 LSTTL50 pF max 1.544 to 50 MHz, 10 TTL30 pF max 50+ to 70 MHz, 10 TTL20 pF max 70+ to 80 MHz (HCMOS), 10 TTLPart Numbering GuideMechanical:Shock:Solderability:Vibration:Solvent Resistance:Terminal Strength:Resistance to Soldering Heat:MIL-STD-883, Method 2002, Condition BMIL-STD-883, Method 2003MIL-STD-883, Method 2007, Condition AMIL-STD-202, Method 215MIL-STD-883, Method 2004, Condition DMIL-STD-202, Method 210, Condition I or JEnvironmental:Gross Leak Test:Fine Leak Test:Thermal Shock:Moisture Resistance:MIL-STD-883, Method 1014, Condition CMIL-STD-883, Method 1014, Condition A2MIL-STD-883, Method 1011, Condition AMIL-STD-883, Method 1004SeriesS1800 = 5.0V, 1.544 to 50 MHz, 15 pF, standbyS1803 = 3.3V, 1.544 to 80 MHz, 15 pF, standbyS1850 = 5.0V, 1.544 to 80 MHz, 50 pF high driveS 1803 C – 60.0000 (T)SaronixFrequency (MHz)Stability ToleranceA = ±25 ppm, -10 to +70°CB = ±50 ppm, -10 to +70°CC = ±100 ppm, -10 to +70°CE = ±50 ppm, -40 to +85°CF = ±100 ppm, -40 to +85°CSaRonix 141 Jefferson Drive • Menlo Park, CA 94025 • USA • 650-470-7700 • 800-227-8974 • Fax 650-462-98948ps max RMS period jitterJitter:SaRonixCrystal Clock Oscillator3.3 & 5V, HCMOS, TTL, SMD S1800 / S1803 / S1850 SeriesTechnical DataAll specifications are subject to change without notice.DS-181 REV F01Tri-State Logic TableTest CircuitScale: None (Dimensions in )mminchesPad 1 Input Logic 1 or NC Logic 0 or GNDPad 3 Output Oscillation High ImpedanceRequired Input Levels on Pad 1: Logic 1 = 2.2V min Logic 0 = 0.8V maxPackage Details7.5.295max 5.2.205max 1.15.043 1.4.055Pad 2(GND)Pad 1(Tri-State Control)2.6.1025.08.200Pad 3(OUT)Pad 4(V DD )1.1.043max Output WaveformSaRonix FrequencyDate CodeS 5 C 5 = S18009 = S1803B = S1850Stability ToleranceMarking Format *C L = S1800/S1803: 15 pF S1850: 50 pF to 50 MHz 30 pF, 50+ to 70 MHz 20 pF, 70+ to 80 MHz (Note A)POWER SUPPLYmA MV MTESTPOINTOUTV DDOSCILLATORGNDPad 2Pad 1Pad 4Pad 30.1 µFTRI-STATE INPUTNote A: CL includes probe and fixture capacitanceRecommended Land Pattern*Exact location of items may vary1.8.0712.0.0794.2.1655.08.200YY WW**External high frequency power supplydecoupling required.**2.5 VDC 1.5 VDC 0.5 VDC T fT fT rT rHCMOSTTL SYMMETRYSYMMETRYGNDV DDLOGIC 020% V DD 50% V DD 80% V DD LOGIC 11243SaRonix 141 Jefferson Drive • Menlo Park, CA 94025 • USA • 650-470-7700 • 800-227-8974 • Fax 650-462-98941.0.039。

STP60NF06L中文资料

1/11July 2003.STB60NF06LSTP60NF06L STP60NF06LFPN-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D 2PAKSTripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.012Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED sAPPLICATION ORIENTED CHARACTERIZATIONs 175 o C OPERATING RANGE s LOW THRESHOLD DRIVEsSURFACE-MOUNTING D 2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”)DESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.APPLICATIONSs HIGH-EFFICIENCY DC-DC CONVERTERS s AUTOMOTIVETYPE V DSS R DS(on)I D STB60NF06L STP60NF06L STP60NF06LFP60 V 60 V 60 V<0.014 Ω<0.014 Ω<0.014 Ω60 A 60 A 60 A(*)ABSOLUTE MAXIMUM RATINGSPulse width limited by safe operating area.(*) Refer to SOA for the max allowable current values on FP-type due to Rth value(1)I SD ≤ 60A, di/dt ≤ 600A/µs, V DD ≤ 48V, T j ≤ T JMAX.(2) Starting T j = 25 o C, I D = 30A, V DD = 30VSymbol ParameterValueUnitSTB60NF06L STP60NF06LSTP60NF06LFP V DS Drain-source Voltage (V GS = 0)60V V DGR Drain-gate Voltage (R GS = 20 k Ω)60V V GS Gate- source Voltage± 15V I D Drain Current (continuous) at T C = 25°C 6060(*)A I D Drain Current (continuous) at T C = 100°C 4242(*)A I DM (•)Drain Current (pulsed)240240(*)A P tot Total Dissipation at T C = 25°C 11030W Derating Factor0.730.2W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns E AS (2)Single Pulse Avalanche Energy 320mJ V ISO Insulation Withstand Voltage (DC)------2000V T stg Storage Temperature-55 to 175°CT jOperating Junction TemperatureSTB60NF06L STP60NF06L/FP2/11THERMAL DATA(#)Only for SMD, When Mounted on 1 inch 2 FR-4 board, 2 oz of Cu.ELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (1)DYNAMICD 2PAK TO-220TO-220FPRthj-case Thermal Resistance Junction-caseMax 1.365.0°C/W Rthj-amb Rthj-pcb T lThermal Resistance Junction-ambient Thermal Resistance Junction-pcb (#)Maximum Lead Temperature For Soldering PurposeMax Max62.535300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µA, V GS = 060V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 15V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 1V R DS(on)Static Drain-source On ResistanceV GS = 5 V I D = 30 A V GS = 10 VI D = 30 A0.0140.0120.0160.014ΩΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 15 VI D =30 A20S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 02000360125pF pF pF3/11STB60NF06L STP60NF06L/FPSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 30 VI D = 30 A R G =4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3)35220ns ns Q g Q gs QgdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 48 V I D = 60 A V GS = 4.5V351020nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 30VI D = 30 A R G =4.7Ω,V GS = 4.5 V (Resistive Load, Figure 3)5530ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)60240A A V SD (*)Forward On Voltage I SD = 60AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 60 Adi/dt = 100A/µs V DD = 30 V T j = 150°C (see test circuit, Figure 5)1102504.5ns nC AELECTRICAL CHARACTERISTICS (continued)STB60NF06L STP60NF06L/FPSTB60NF06L STP60NF06L/FPSTB60NF06L STP60NF06L/FP6/11Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/11STB60NF06L STP60NF06L/FPDIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.959.350.3520.368D180.315E 1010.40.3940.409E18.50.334G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.43.20.0940.126R 0.40.015V20°8°0°8°D 2PAK MECHANICAL DATA9/11STB60NF06L STP60NF06L/FPDIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181C 1.23 1.320.0480.051D 2.40 2.720.0940.107E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.40 2.700.0940.106H21010.400.3930.409L216.400.645L328.901.137L413140.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.20 6.600.2440.260L9 3.50 3.930.1370.154DIA3.753.850.1470.151TO-220 MECHANICAL DATASTB60NF06L STP60NF06L/FP10/11DIM.mm inchMIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.100750.082R50 1.574T0.250.35.0.00980.0137W23.724.30.9330.956DIM.mm inchMIN.MAX.MIN.MAX.A33012.992B 1.50.059C12.813.20.5040.520D20.20.795G24.426.40.960 1.039N100 3.937T30.4 1.197BASE QTY BULK QTY10001000REEL MECHANICAL DATA* on sales typeTUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*D2PAK FOOTPRINTTAPE MECHANICAL DATA元器件交易网STB60NF06L STP60NF06L/FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2002 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.11/11。

HS00-06100中文资料

Configuration3 Tx Rx T,C S T,C T,C,S T,C T,C,S T,C,S T,C T,C T,C T,C T,C T,C T,C,S T,C T,C,S T,C C,T C,T C,T C,T T,C C,T T,C C,T T,C T,C T,C C,T T,C
Turns Ratio4 Tx Rx 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT
• • • • • •
IEEE 802.3af compliant performance Standard Operating Temperature Range Extended Operating Temperature Range 350mA current capability RoHS Peak Solder Rating 260°C Non-RoHS Peak Solder Rating 235°C
Specifications
BI P/N1 RoHS2 LF LF LF LF LF LF LF LF LF LF LF Ports Application Supported 10/100 10/100 10/100 10/100 10/100 10/100 10/100 10/100 10/100 10/100 10/100 1 1 2 2 2 2 2 2 2 4 4 Configuration3 Tx Rx T,C C,T T,C,S T,C,S C,T T,C,S T,C T,C,S T,C T,C,S T,C T,C C,T C,T T,C,S C,T T,C,S T,C T T,C C,T T,C Turns Ratio4 Tx Rx 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT 1CT:1CT Style 16-pin SMT 16-pin SMT 24-pin SMT 24-pin SMT 24-pin SMT 24-pin SMT 24-pin SMT 24-pin SMT 24-pin SMT 48-pin SMT 48-pin SMT Packaging (mm) Hi-Pot Pitch Length Width Height (Vrms) 50 mil 50 mil 39 mil 39 mil 39 mil 40 mil 40 mil 40 mil 40 mil 40 mil 40 mil 12.70 12.70 13.77 13.77 13.77 13.90 13.76 13.76 13.76 27.81 27.81 9.65 9.35 18.80 18.80 18.80 19.05 15.24 15.24 15.24 15.30 15.30 5.98 6.22 5.72 5.72 5.72 6.35 6.22 6.22 5.85 7.60 7.60 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500 1500

WP5603SIDLSDJ3;中文规格书,Datasheet资料

All design applications should refer to Kingbright application notes available at /ApplicationNotes
SPEC NO: DSAI9678 APPROVED: WYNEC REV NO: V.6A CHECKED: Allen Liu DATE: JUL/19/2012 DRAWN: D.M.Su PAGE: 6 OF 6 ERP: 1101024787
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SPEC NO: DSAI9678 APPROVED: WYNEC
REV NO: V.6A CHECKED: Allen Liu
DATE: JUL/19/2012 DRAWN: D.M.Su
PAGE: 5 OF 6 ERP: 1101024787
/
Parameter Power dissipation DC Forward Current Peak Forward Current [1] Reverse Voltage Operating/Storage Temperature Lead Solder Temperature [2] Lead Solder Temperature [3]
SPEC NO: DSAI9678 APPROVED: WYNEC
REV NO: V.6A CHECKED: Allen Liu
DATE: JUL/19/20101024787
/
Selection Guide
Units mW mA mA V
SPEC NO: DSAI9678 APPROVED: WYNEC
REV NO: V.6A CHECKED: Allen Liu
DATE: JUL/19/2012 DRAWN: D.M.Su

FRX-300-060中文资料

Electrical Characteristics(23 )Resistance Tolerance Hold Current Trip Current Max.Time to Trip Maximum Current Rated Voltage Typical Power R MIN R 1MAX Part Number IH,A I T ,A at 5xIH I MAX ,A V MAX ,V dc Pd, WΩΩFRX010-600.100.20 4.040600.38 2.507.50FRX017-600.170.34 3.040600.48 2.007.00FRX020-600.200.40 2.240600.41 1.83 4.40FRX025-600.250.50 2.540600.45 1.25 3.00FRX030-600.300.60 3.040600.490.88 2.10FRX040-600.400.80 3.840600.560.55 1.29FRX050-600.50 1.00 4.040600.770.50 1.17FRX065-600.65 1.30 5.340600.880.310.72FRX075-600.75 1.50 6.340600.920.250.60FRX090-600.90 1.807.240600.990.200.47FRX110-60 1.10 2.208.24060 1.500.150.38FRX135-60 1.35 2.709.64060 1.700.120.30FRX160-60 1.60 3.2011.44060 1.900.090.22FRX185-60 1.85 3.7012.64060 2.100.080.19FRX250-60 2.50 5.0015.64060 2.500.050.13FRX300-60 3.00 6.0019.84060 2.800.040.10FRX375-603.757.5024.04060 3.200.030.08I H =Hold current-maximum current at which the device will not trip at 23 still air.I T =Trip current-minimum current at which the device will always trip at 23 still air.V MAX =Maximum voltage device can withstand without damage at its rated current.I MAX =Maximum fault current device can withstand without damage at rated vo ltage (V max).Pd=Typical power dissipated from device when in the tripped state in 23 still air environment.R MIN =Minimum device resistance at 23 .R 1MAX =Maximum device resistance at 23 , 1 hour after tripping .Physical specifications:Lead material: FRX010~FRX090Tin plated copper,24AWG.FRX110~FRX375Tin plated copper,20AWG.Soldering characteristics:MIL-STD-202, Method 208E.Insulating coating:Flame retardant epoxy ,meet UL-94V-O requirement.Radial Leaded PTC FRX SeriesFUZETECFRX Product Dimensions (Millimeters)FRX 010-60~ FRX 090-60FRX 110-60~ FRX 375-60Lead Size :24A WG,Lead Size :20A WG,Φ 0.51 mm Diameter Φ0.81mm DiameterA B C D E F Part Number Maximum MaximumTypical MinimumMaximumTypical FRX-010-0607.412.7 5.17.6 3.1 1.1FRX-017-0607.412.7 5.17.63.1 1.1FRX-020-0607.412.7 5.17.6 3.1 1.1FRX-025-0607.412.7 5.17.6 3.1 1.1FRX-030-0607.413.0 5.17.6 3.1 1.1FRX-040-0607.613.5 5.17.6 3.1 1.1FRX-050-0607.913.7 5.17.6 3.1 1.1FRX-065-0609.714.55.17.6 3.1 1.1FRX-075-06010.415.2 5.17.6 3.1 1.1FRX-090-06011.715.8 5.17.6 3.1 1.1FRX-110-06013.018.0 5.17.6 3.1 1.4FRX-135-06014.519.6 5.17.6 3.1 1.4FRX-160-06016.321.3 5.17.6 3.1 1.4FRX-185-06017.822.9 5.17.6 3.1 1.4FRX-250-06021.326.410.27.6 3.1 1.4FRX-300-06024.930.010.27.6 3.1 1.4FRX-375-06028.533.510.27.63.11.4Thermal Derating CurveRadial Leaded PTC FRX SeriesFUZETECTypical Time-To-Trip at 23Part Numbering SystemPart Marking SystemF R XStandard PackageP/NPcs /BagReel/TapeP/NPcs /BagReel/TapeFRX-017-605003K FRX-110-603001.5K FRX-020-605003K FRX-135-60200 1.5K FRX-025-605003K FRX-160-60200 1.5K FRX-030-605003K FRX-185-60200 1.5K FRX-040-605003K FRX-250-60100------FRX-050-605003K FRX-300-60100------FRX-065-603003K FRX-375-60100------FRX-075-603003KRadial Leaded PTC FRX SeriesFUZETEC。

绿扬LDP60000系列使用手册

1）该示波器必须在规定的工作环境中使用，才能保证其处于最佳状态。 2）版本如有改动，不再另行向客户说明。
1
1、概述 1.1 一般说明
LDP60000 系列（LDP60102/104/202/204/302/304/502/504、LDP61002/004）数字荧光示波器是一种高性能的数字示波器。仪器具有数据存储、光标和参数自动测量、波形运算、FFT 分析等功能，备有 VGA、 USB、网口等，仪器操作简便、直观、功耗低、可靠性高。 1.2 主要特点
2
2、性能指标
所有技术规格都适用于 LDP60000 系列（（LDP60102/104/202/204/302/304/502/504、LDP61002/004）数
字荧光示波器。要让示波器处于最佳工作状态，示波器必须首先符合以下条件：
1：在常温（10℃～40℃）内，示波器已经工作十分钟以上。 2：如果环境操作温度的变化幅度大，执行“校正”操作。
平均
2.3 触发系统项目
触发灵敏度电平范围输入阻抗最高安全输入电压耦合
带宽限制
标配 128MB/CH×4 选配 256MB/CH×4 每通道 10 万帧/秒（4 通道同时），40 万帧/秒（单通道工作） 256 级（8bits）彩色灰度等级。常规（实时时序）、等效、峰值（毛刺<1.5ns）、分段存储（以最高为当前时基 1/50000 的采样周期采样）平均 21~28可选
DC～1000MHz（LDP61002/61004）
-3dB
上升时间
≤3.5ns（LDP60102/60104）
≤1.75ns （LDP60202/60204）
≤1.2ns（LDP60302/60304）
≤0.7ns （LDP60502/60504）

电除尘器说明书中文)

目录一、概述 (1)二、构造及工作原理 (1)三、型号说明及性能特点 (3)四、用户须知 (3)五、说明 (4)六、技术性能参数表 (4)一、概述KDW型卧式电除尘器是科行公司引进并消化国内外先进技术, 总结国内外设备运行经验, 结合我国各行业工业窑炉废气工况的特点, 为适应国内外越来越严格的烟气达标排放要求, 研制开发的具有自主知识产权的高效电除尘器。

它具有处理风量大、运行阻力小、运行稳定、维护方便、除尘效率高、能承受高负压、处理高浓度粉尘等优点, 对工艺环境、入口介质温度、湿度等条件无特殊要求, 广泛应用于电力、冶金、化工、建材、轻工等工业废气的净化和有用物质的回收。

二、构造及工作原理(参见工作原理图)1、构造本除尘器由进出口封头、气流分布装置、壳体、灰斗、阳极系统、阴极系统、阴阳极振打系。

(1)进出口封头进出口封头的作用是将处理的气体均匀地导入和导出电场区。

进口一般设计成中心水平进气形式, 也可设计成上进气或下进气形式。

其中中心水平进气和上进气还可设计成带预灰斗形式, 以适应特殊的工艺要求。

出口封头一般设计成中心水平出气形式, 同样也可设计成上出气或下出气形式。

(2)气流分布装置气流分布均匀性是提高除尘效率的先决条件。

它一般安装在进口喇叭内。

其作用是使进入电场横断面的气体均匀分布, 气流分布板的型式有圆孔型、方孔型、X型、折页型和百叶窗型等, 根据进口封头的形式和工艺条件进行选用。

(3)壳体壳体的作用是诱导含尘气体进入高压电场减少热损失, 支撑阴阳极系统及振打装置, 形成与外界环境隔离的独立收尘空间。

它一般由立柱、底梁、顶梁、侧板、端板、管撑、内部走台、人孔门、活动支承等组成。

对特殊应用场合, 壳体还带有防爆卸压装置。

(4)灰斗灰斗主要起承接积灰的作用。

它主要由立柱、灰斗、检修门、膨胀节、加热装置、振打装置、密封装置等组成。

(5)阳极系统阳极板是电除尘器的主要部件, 承担电除尘器的粉尘收集, 对电除尘器的性能有较大影响。

RQK0607AQDQS中文资料

RQK0607AQDQSSilicon N Channel MOS FETPower SwitchingREJ03G1620-0100Rev.1.00Mar 03, 2008Features• Low on-resistanceR DS(on) = 210 mΩ typ.(at V GS = 4.5 V, I D = 1.2 A)• Low drive current• High speed switching• V DSS : 60 V and capable of 2.5 V gate driveOutlineAbsolute Maximum Ratings(Ta = 25°C)UnitRatingsItem SymbolDrain to source voltage V DSS 60 VGate to source voltage V GSS±12 VDrain current I D 2.4 ADrain peak current I D(pulse) Note1 8 ABody - drain diode reverse drain current I DR 2.4 A Channel dissipation Pch Note2 1.5 W Channel temperature Tch 150 °CStorage temperature Tstg –55 to +150 °CNotes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)Electrical Characteristics(Ta = 25°C)Item Symbol Min Typ Max Unit Test conditionsDrain to source breakdown voltage V (BR)DSS 60 — — V I D = 10 mA, V GS = 0 Gate to source breakdown voltage V (BR)GSS +12 — — V I G = +100 µA, V DS = 0 Gate to source breakdown voltage V (BR)GSS –12 — — V I G = –100 µA, V DS = 0 Gate to source leak current I GSS — — +10 µA V GS = +10 V, V DS = 0 Gate to source leak current I GSS — — –10 µA V GS = –10 V, V DS = 0 Zero gate voltage drain current I DSS — — 1 µA V DS = 60 V, V GS = 0 Gate to source cutoff voltage V GS(off) 0.4 — 1.4 V V DS = 10 V, I D = 1 mA Drain to source on state resistance R DS(on) — 210 270 m Ω I D = 1.2 A, V GS = 4.5 V Note3 Drain to source on state resistance R DS(on) — 250 350 m Ω I D = 1.2 A, V GS = 2.5 V Note3 Forward transfer admittance |y fs | 2.8 4.4 — S I D = 1.2 A, V DS = 10 V Note3 Input capacitance Ciss — 170 — pF Output capacitance Coss — 24 — pFReverse transfer capacitance Crss — 11 — pF V DS = 10 VV GS = 0 f = 1 MHz Turn - on delay timet d(on) — 10 — ns Rise timet r — 33 — nsTurn - off delay time t d(off) — 26 — nsFall timet f — 5 — nsI D = 1.2 AV GS = 4.5 V R L = 8.3 Ω Rg = 4.7 Ω Total gate chargeQg — 2 — nC Gate to Source charge Qgs — 0.4 — nCGate to drain chargeQgd — 0.5 — nCV DD = 10 V V GS = 4.5 V I D = 2.4 A Body - drain diode forward voltage V DF — 0.8 — V I F = 2.4 A, V GS = 0 Note3Notes: 3. Pulse testMain CharacteristicsPackage DimensionsOrdering InformationPart No. Quantity Shipping Containerpcs. φ178 mm reel, 12 mm Emboss taping RQK0607AQDQSTL-E 1000Refer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7858/7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2377-3473Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 3518-3399Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。

6MBP15RH060中文资料

DC bus voltageDC bus voltage (Surge)DC bus voltage (Short operating)Collector-Emitter voltage Collector currentDC 1msDuty=44.1%Collector power dissipation One transistorJunction temperatureInput voltage of power supply for pre-driver Input signal voltage Input singal current Alarm signal voltage Alarm signal current Storage temperatureOperating case temperatureIsolating voltage (T erminal to base, 50/60Hz sine wave 1min.)Screw torque6MBP15RH060IGBT ModulesIGBT -IPM R series600V / 15A / 6 in one-packageq Absolute maximum ratings (Tc=25˚C unless otherwise specified)s Features• Low power loss and soft switching• High performance and high reliability IGBT with overheating protection• Higher reliability because of a big decrease in number of parts in built-in control circuits Applications• Inverter for motor drive• AC and DC servo drive amplifier • UPS (Uninterruptible power supply)s Maximum ratings and characteristicsItemSymbol Rating Unit V DCV DC (surge)V SC V CES I C I CP –I C P C T j V CC V in I in V ALM I ALM T stg T cop V isoMounting (M4)45050040060015301540150–0.3 to 20Vz 1Vcc 15–40 to 125–20 to 100AC 2500 2.0V V V V A A A W ˚C V V mA V mA ˚C ˚C V N • mq Electrical characteristics of power circuit (Tc=Tj=25˚C, Vcc=15V)Symbol I CESV CE (sat)V FConditionV CE =600V, Vin open Ic=15A –Ic=15AMin.–––Max.1.02.73.5Unit mA V VTyp.–––ItemCollector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD元器件交易网Min.0.5––Symbol t on t off t rrUnit µs µs µsq Switching characteristics (Tc=Tj=25˚C, Vcc=15V)ItemConditionIc=15A, V DC =300V Inductive-LoadMax.–3.50.5Typ.–––Switching time (IGBT) See Fig. 3Switching time (FWD)Fig.1 Definition of OC delay timeFig.2 Definition of tscFig.3 Definition of switching timeDC bus voltageOperating power supply voltage range of pre-drive Switching frequency Flatness of heat sinkMounting screw torque (M4)Junction to case thermal resistanceCase to fin thermal resistance with compound ItemSymbol Rth (j-c)Rth (j-c)Rth (c-f)Max.3.15.4–Unit ˚C/W ˚C/W ˚C/WTyp.––0.05q Thermal characteristics (Tc=Tj=25˚C, Vcc=15V)IGBT FWDSymbol V DC V CC f sw ––ItemUnit V V kHz µm N • mTyp.–15–––Min. 200 13.5 1–100 1.3Max.40016.5201001.7q Recommendable valueMin.–––q Electrical characteristics of control circuit (Tc=Tj=25˚C, Vcc=15V)Shows theory dimensionss Block diagrams Outline drawings, mmPre-driver 1 includes following functions. (P-side)• Amplifier for drive• Power supply undervoltage protection • IGBT chip overheating protectionPre-driver 2 includes following functions. (N-side)• Amplifier for drive• Power supply undervoltage protection • IGBT chip overheating protection • Overcurrent protection • Alarm signal outputMass : 50gs Characteristics (Representative)Collector current vs. Collector-emitter voltage Collector current vs. Collector-emitter voltage Switching losses vs. Collector current Switching losses vs. Collector currentSwitching time vs. Collector current Switching time vs. Collector currentForward voltage vs. Forward current Forward voltage vs. Forward currentTransient thermal resistance Power supply current vs. Switching frequency Overcurrent protection vs. Case temperature。

PM50CSD060中文资料

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Intellimod™ ModuleThree PhaseIGBT Inverter Output 50 Amperes/600 VoltsPM50CSD060Description:Powerex Intellimod™ Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices.Features:□Complete Output Power Circuit□Gate Drive Circuit □Protection Logic –Short Circuit –Over Current–Over Temperature –Under Voltage□Low Loss Using 4th Generation IGBT Chip Applications:□Inverters □UPS□Motion/Servo Control □Power SuppliesOrdering Information:Example: Select the complete part number from the table below -i.e. PM50CSD060 is a 600V ,50 Ampere Intellimod™ Intelligent Power Module.Type Current Rating V CES AmperesVolts (x 10)PM5060DimensionsInches Millimeters A 4.33±0.04110.0±1.0B 3.74±0.0295.0±0.5C 3.50±0.0489.0±1.0D 3.2783.0E 2.91±0.0274.0±0.5F 2.4462.0G 1.2832.6H 1.2431.6J 1.0226.0K 0.9424.0L 0.87 +0.06/-022.0 +1.5/-0.0M 0.7920.0N 0.7619.4P 0.7519.0Q 0.70817.98R0.67017.02DimensionsInches Millimeters S 0.6717.0T 0.5213.2U 0.3910.0V 0.287.0W 0.307.5X 0.24 6.0Y 0.24 Rad.Rad. 6.0Z 0.22 Dia.Dia. 5.5AA Metric M5M5AB 0.127 3.22AC 0.10 2.6AD 0.08±0.02 2.0±0.5AE 0.07 1.8AF 0.06 1.6AG0.02±0.010.5±0.3Outline Drawing and Circuit DiagramPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PM50CSD060Intellimod™ ModuleThree Phase IGBT Inverter Output50 Amperes/600 VoltsAbsolute Maximum Ratings, T j = 25°C unless otherwise specifiedCharacteristics Symbol PM50CSD060Units Power Device Junction Temperature T j-20 to 150°C Storage Temperature T stg-40 to 125°C Case Operating Temperature T C-20 to 100°C Mounting Torque, M5 Mounting Screws—31in-lb Mounting Torque, M5 Main Terminal Screws—31in-lb Module Weight (Typical)—560Grams Supply Voltage Protected by OC and SC (V D = 13.5 - 16.5V, Inverter Part) T j = 125°C V CC(prot.)400Volts Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V ISO2500VoltsIGBT Inverter SectorCollector-Emitter Voltage (V D = 15V, V CIN = 15V)V CES600Volts Collector Current, ± (T C = 25°C)I C50Amperes Peak Collector Current, ± (T C = 25°C)I CP100Amperes Supply Voltage (Applied between P - N)V CC400Volts Supply Voltage, Surge (Applied between P - N)V CC(surge)500Volts Collector Dissipation (T C = 25°C)P C125WattsControl SectorSupply Voltage Applied between (V UP1-V UPC, V VP1-V VPC, V WP1-V WPC, V N1-V NC)V D20Volts Input Voltage Applied between (U P-V UPC, V P-V VPC, W P-V WPC, U N- V N- W N-V NC)V CIN20Volts Fault Output Supply Voltage (Applied between F O and V C)V FO20Volts Fault Output Current (U FO, V FO, W FO, F O)I FO20mAElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ.Max.UnitsIGBT Inverter SectorCollector Cutoff Current I CES V CE = V CES, T j = 25°C,—— 1.0mAV D = 15V, V CIN = 15VV CE = V CES, T j = 125°C,——10mAV D = 15V, V CIN = 15VDiode Forward Voltage V EC-I C = 50A, V D = 15V, V CIN = 15V— 2.2 3.3Volts Collector-Emitter Saturation Voltage V CE(sat)V D = 15V, V CIN = 0V, I C = 50A,— 1.70 2.3VoltsT j = 25°CV D = 15V, V CIN = 0V, I C = 50A,— 1.70 2.3VoltsT j = 125°CInductive Load Switching Times onrr D CINC(on)CC Coff jC(off)Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272PM50CSD060Intellimod™ ModuleThree Phase IGBT Inverter Output50 Amperes/600 VoltsElectrical and Mechanical Characteristics, T j = 25°C unless otherwise specifiedCharacteristics Symbol Test Conditions Min. Typ.Max.UnitsControl SectorOver Current T rip Level Inverter Part OC T j = -20°C——220Amperes (V D = 15V)T j = 25°C109128180AmperesT j = 125°C65——Amperes Short Circuit T rip Level Inverter Part SC-20°C ≤ T j≤ 125°C, V D = 15V—132—Amperes Over Current Delay Time t off(OC)V D = 15V—10—µS Over Temperature Protection (V D = 15V)OT Trip Level111118125°C (Lower Arm)OT R Reset Level—100—°C Supply Circuit Under Voltage Protection UV Trip Level11.512.012.5Volts (-20 ≤ T j≤ 125°C)UV R Reset Level—12.5—Volts Circuit Current I D V D = 15V, V CIN = 15V, V N1-V NC—4055mAV D = 15V, V CIN = 15V, V XP1-V XPC—1318mA Input ON Threshold Voltage V CIN(on)Applied between 1.2 1.5 1.8Volts Input OFF Threshold Voltage V CIN(off)U P, V P, W P, U N, V N, W N-V NC 1.7 2.0 2.3Volts Fault Output Current*FO(H)D FOFO(L)D FOMinimum Fault Output Pulse Width*t FO V D = 15V 1.0 1.8—mS*Fault output is given only when the internal OC, SC, OT and UV protections schemes of either upper or lower devide operate to protect it.Thermal CharacteristicsCharacteristic Symbol Condition Min. Typ.Max.Units Junction to Case Thermal Resistance R th(j-c)Q Each IGBT—— 1.00°C/WattR th(j-c)F Each FWDi—— 2.50°C/WattR th(j-c´)Q Each IGBT**—— 0.82†°C/WattR th(j-c´)F Each FWDi**—— 1.51†°C/Watt Contact Thermal Resistance R th(c-f)Case to Fin Per Module,—— 0.027°C/WattThermal Grease Applied** T C measured point is just under chip.† If you use this value, R th(f-a) should be measured just under the chips.Recommended Conditions for UseCharacteristic Symbol Condition Value Units Supply Voltage V CC Applied across P-N T erminals0 ~ 400Volts Control Supply Voltage***V D Applied between V UP1-V UPC,15 ± 1.5VoltsV N1-V NC, V VP1-V VPC, V WP1-V WPCInput ON Voltage V CIN(on)Applied between0 ~ 0.8VoltsCIN(off)P P P N, N, N NC DPWMMinimum Dead Time t DEAD Input Signal≥ 2.5µS*** With ripple satisfying the following conditions: dv/dt swing ≤±5V/µs, Variation ≤ 2V peak to peak.PM50CSD060Intellimod ™ ModuleThree Phase IGBT Inverter Output 50 Amperes/600 VoltsPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-727200.51.02.01.5SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)(INVERTER PART)COLLECTOR CURRENT, I C , (AMPERES)S A T U R A T I O N V O L T A G E , V C E (s a t ), (V O L T S )105020304010010110210-1COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G T I M E S , t o n , t o f f , (µs )SWITCHING TIME VS.COLLECTOR CURRENT (TYPICAL)10010110010110210-1COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G T I ME S , t c (o n ), t c (o f f ), (µs )SWITCHING TIME VS.COLLECTOR CURRENT (TYPICAL)10010110010110210-2COLLECTOR CURRENT, I C , (AMPERES)R E V E R S E R E C O V E R Y T I M E , t r r , (µS )REVERSE RECOVERY CURRENT VS.COLLECTOR CURRENT (TYPICAL)10-1100100R E V E R S E R E C O V E R Y C U R R E N T , I r r , (A M P E R E S )1011020 1.0 2.5DIODE FORWARD VOLTAGE, V EC , (VOLTS)DIODE FORWARD CHARACTERISTICS(INVERTER PART)0.5 1.5 2.010010110210-1COLLECTOR CURRENT, I C , (AMPERES)S W I T C H I N G L O S S , E S W (m J /P U L S E )100101TIME, (s)T R A N S I E N T I M P E D A N C E , Z t h (j -c ), (N O R M A L I Z E D V A L U E )TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT)10110-110010110010-110-210-310-210-3TIME, (s)T R A N S I E N T I M P E D A N C E , Z t h (j -c ), (N O R M A L I Z E D V A L U E )TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(FWDi)10110-110010110010-110-210-310-210-3SWITCHING LOSS CHARACTERISTICS。

LH60200-3中文资料

Screw Pressure Plate Box Lug
Maximum Wire Size
30
SR SR SR
PR PR PR
60
100 200 400 600
CR CR CR CR CR CR C C C C C CR CR C C
S & P = #10 CU C = #6 CU-AL S = #10 CU C = #2 CU-AL #2/0 CU-AL 250 MCM CU-AL (2) 350 MCM CU-AL (2) 500 MCM CU-AL
RECOMMENDED FUSES
Class H Blocks 250V 600V
NLN RLN NLS RLS
Class R Blocks 250V 600V
FLNR KLNR LLNRK TLN FLSR/FLSR_ID KLSR LLSRK/LLSRK_ID IDSR
Class H fuse blocks are for use with Class H/K5 fuses, which have an interrupting rating of up to 50,000 amperes. When higher interrupting ratings are required, use Class R fuses (200,000 A.I.R.) and Class R fuse blocks. Class R fuse blocks are dimensionally the same as Class H blocks, but incorporate a rejection feature which allows only Class R fuses to be inserted.

lfd系列固体流量计使用说明书

LFD型固体流量计使用说明书上海青浦县流量计厂上海哲久仪器仪表厂感谢你选择本厂的产品和服务在使用产品前请仔细阅读说明书目录一、总论------------------------------------------------------------- 11.概述--------------------------------------------------------------------12.主要技术规范---------------------------------------------------------13.主要特点---------------------------------------------------------------5二、工作原理--------------------------------------------------------7三、流量机结构-----------------------------------------------------9四. 安装------------------------------------------------------------- 11五. 调整------------------------------------------------------------ 141.调整前的准备--------------------------------------------------------142.水平调整--------------------------------------------------------------153.静态校验-------------------------------------------------------------164.动态标定--------------------------------------------------------------18 六流程计的使用和维护----------------------------------------- 25七. 型号编制说明------------------------------------------------ 28八. 开箱与附件--------------------------------------------------- 29九. 订货须知----------------------------------------------------- 29一总论1·概述冲量式固体流量计是一种基于动量原理来测量自由下落的粉粒状介质的流量计.它把被测介质冲量引起的力和物料在检测板上向下滑动时所产生的力转换成与瞬时重量成正比的标准直流电信号(0~10mA或4-20mA)。

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123
SPECIFICATIONS
Voltage:600VAC
Interrupting Rating:10,000 amperes Required Screw Torque:16 inch pounds Ampere Rating:LFFS030CC:30 Amperes
LFDS040:40 Amperes LFDS060:60 Amperes
Approvals:UL Listed (File No.E166081)
CSA Certified
Terminals:Accepts wire size through 8AWG
Disconnect Switches
Fusible/Non-fusible
LFCB001Add-on Contact Block (N.O.)LFCB002
Add-on Contact Block (N.C.)LFPP001Add-on Power Pole (N.O.)LFPP002Add-on Power Pole (N.C.)
LFTC001
T erminal Cover (1 Pair)
ORDERING INFORMATION
Part Number
LFFS030 CC
30A fusible switch with integrated Class CC fuse holder
LFDS04040A non-fusible switch LFDS06060A non-fusible switch
See below for Handles and Accessories (sold separately)
LFRH001*Red Handle LFRK001*Red Knob LFBH001*Black Handle LFBK001*Black Knob LFBK002**Black Knob SHFT002Shaft (19.68")SHFT003Shaft (11.81")SHFT005Shaft (7.78")
*
Includes mounting hardware and standard length shaft for enclosures 3.5" through 8" deep.**Supplied with 2" shaft
FEATURES/BENEFITS
s
Reduce panel costs —This is the smallest 30A discon-nect switch and fuse block on the market.This minimizes panel space, reducing enclosure costs.
s
Minimize wiring time — Integral Class CC block elimi-nates the need to install separate fuse blocks (LFFS only).s
Reduce installation costs —Panel-mount or integral DIN rail adapter allows quick and easy mounting.
s
Protect personnel — Dead Front design eliminates contact with live parts.Optional terminal covers add extra degree of protection for personnel.
s
Expandable —Optional auxiliary contact blocks and power poles quickly attach for up to 6 poles per switch.s
Optional shafts available for enclosures 3.5" through 20" deep.
s
Lockout style available to meet OSHA Standard for control of hazardous energy sources (LFRK001 only).s
Operator handles meet IP65.
The LFFS series fusible switches eliminate the need for a separate fuse block by integrating a three pole fuse holder into the switch body.This saves precious panel space and reduces wiring time.These rod-operated devices are UL Listed and CSA Certified.
The LFDS series disconnect switches can be used with external fuse blocks, permitting the use of RK1, RK5, Class J and Class CC fuses.
APPLICATIONS
Littelfuse disconnect switches are perfect for use where the National Electrical Code requires that a separate disconnect means be located within sight of all motor monly used as a main switch or distribution switches, these units are also ideal for use as safety switches for air conditioners,pumps and compressors.
Accessories。