NCE05N60F
NC-1000型雕铣机系统厂商手册-R12.06
运输与储存 注意
本产品必须按其重量正确运输； 堆放产品不可超过规定数量； 不可在产品上攀爬或站立，也不可在上面放置重物； 不可用与产品相连的电缆或器件对产品进行拖动或搬运； 储存和运输时应注意防潮。
开箱检查 注意
确认是否是您所购买的产品； 检查产品在运输途中是否有损坏； 对照清单，确认各部件、附件是否齐全，有无损伤； 如存在产品不符、缺少附件或运输损坏等情况，请及时与我公司联系。
专业 专心 专注
A3
上海维宏电子科技股份有限公司
Shanghai Weihong Electronic Technology Co., Ltd.
接线注意事项 注意
参加接线与检查的人员，必须具有完成此项工作的能力。 系统中的强电设备金属外壳（伺服驱动器、变频器、步进驱动器开关电源、电机）可靠接地，实 现主动屏蔽。 数控装置必须可靠接地，接地电阻应小于 4 欧姆。切勿使用中性线代替地线。否则可能会因受干 扰而不能正常地工作。 接线必须正确、牢固，否则可能产生误动作。 任何一个接线插头上的电压值和正负（＋/－）极性，必须符合说明书的规定，否则可能发生短路 或设备永久性损坏等故障。 在插拔插头或拨动开关前，手指应保持干燥，以防触电或损坏数控装置。 连接电线不能有破损，不能受挤压，否则可能发生漏电或短路。 不能带电插拔插头或打开数控装置机箱。
运行与调试注意事项 注意
运行前，应先检查参数设置是否正确。错误设定会使机器发生意外动作。 参数的修改必须在参数设置允许的范围内，超过允许的范围可能会导致运转不稳定及损坏机器的 故障。
使用注意事项 注意
插入电源前，确保开关在断电的位置上，避免偶然起动。 为避免或减少电磁干扰对数控装置的影响，进行电气设计时，请确定电磁兼容性。系统附近如有 其他电子设备，则可能产生电磁干扰，应接入一个低通滤波器以削弱其影响。 不可对系统频繁通、断电。停电或断电后，若需重新通电，推荐的间隔时间至少为 1 分钟。
NCE05N501
众
市
圳
深
电话：（０７５５）２７８５８６６７ ２７８５８６６１ 传真：（０７５５）２７８５８７０７
Page 5
TO-251 Package Information
NCE05N50I，NCE05N50K
Pb-Free Product
Symbol
A A1 B b b1 c c1 D D1 E e e1 L
6.350
6.650
0.087 0.042 0.053 0.020 0.028 0.017 0.017 0.250
0.094 0.054 0.065 0.028 0.035 0.023 0.023 0.262
5.200
5.400
0.205
0.213
5.400
5.700
0.213
0.224
2.300 TYP
ISDM
TC=25°C
4.8
A
14.4
A
Forward on voltage
VSD
Tj=25°C,ISD=4.8A,VGS=0V
1
1.3
V
Reverse Recovery Time Reverse Recovery Charge
trr
300
nS
Tj=25°C,IF=4.8A,di/dt=100A/μs
RthJA
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
75
司°C /W
公 Min Typ Max Unit
On/off states Drain-Source Breakdown Voltage
4066中文资料
Sine
Wave
5
VDD = 15V
Distortion
0
Frequency
VC = VDD = 5V, VSS = −5V RL = 10 kΩ,
0.
Response-Switch VIS = 5Vp-p, f= 1 kHz, (Figure 4)
1
“ON” (Frequency VC = VDD = 5V, VSS = −5V, RL = 1 kΩ,
当模拟开关的电源电压采用双电源时，例如 =﹢5V， =﹣5V（均对地0V 而 言），则输入电压对称于0V 的正、负信号电压（﹢5V～﹣5V）均能传输。这时 要求控制信号 C=“1”为+5V，C=“0”为-5V，否则只能传输正极性的信号电压。
CD4066引脚功能图
内部方框图
Absolute Maximum Ratings 绝对最大额定值：
5
=50pF(Figure 6)
0
RL=1.0kΩ, CL=50pF, (Figure 7)VOS(f) = ½ VOS(1.0 kHz)
6. VDD = 5.0V
0
8. VDD = 10V
0
8. VDD = 15V
5
Signal
Input
CIS Capacitance 信 号
8.
输入电容
0
Signal
20
80 240
320
0
Δ“ON”
RL = 10kΩ to (VDD − VSS/2) VCC = VDD, VIS = VSS to VDD
ΔRO Resistance
VDD = 10V
10
N Between Any 2
Murata LQW03AW_00系列芯片电容器（芯片导纳）参考规格书说明书
CHIP COILS (CHIP INDUCTORS) LQW03AW□□□□00□ REFERENCE SPECIFICATION1. ScopeThis reference specification applies to chip coils (chip inductors) LQW03AW_00 series for general electronic equipment.2. Part Numbering(Ex.)LQ W 03 A W 5N4 J 0 0 DProductID Structure Dimension(L × W)ApplicationandcharacteristicCategory Inductance Tolerance Performance ElectrodespecificationPackagingD: taping*B: bulk*B: Bulk packing is also available (taping condition: however, products without reels are put in plastic bags).3. Part Number and RatingOperating temperature range -55°C to +125°C (including self-generated heat)Storage temperature range -55°C to +125°CCustomer Part numberMurataPart numberInductance Q(900 MHz)(Typicalvalue)DCresistance(Ω max.)Self-resonantfrequency(GHz min.)Ratedcurrent(mA) Nominalvalue(nH)ToleranceLQW03AW1N0C00D1.0C:±0.2nH 48 0.03 19.0 900 LQW03AW1N1C00D1.1C:±0.2nH 41 0.06 19.0 660 LQW03AW1N7C00D1.7C:±0.2nH 41 0.07 19.0 600 LQW03AW1N8C00D1.8C:±0.2nH 37 0.10 19.0 520 LQW03AW1N9C00D1.9C:±0.2nH 41 0.08 19.0 620 LQW03AW2N0C00D2.0C:±0.2nH 42 0.10 19.0 490 LQW03AW2N1C00D2.1C:±0.2nH 35 0.16 19.0 400 LQW03AW2N2C00D2.2C:±0.2nH 33 0.16 19.0 400 LQW03AW2N7C00D2.7C:±0.2nH 46 0.06 15.0 720 LQW03AW2N8C00D2.8C:±0.2nH 44 0.08 14.0 600 LQW03AW2N9C00D2.9C:±0.2nH 41 0.10 13.0 540 LQW03AW3N0C00D3.0C:±0.2nH 34 0.22 14.0 350 LQW03AW3N1C00D3.1C:±0.2nH 48 0.07 12.0 720 LQW03AW3N2C00D3.2C:±0.2nH 48 0.08 10.0 580 LQW03AW3N3C00D3.3C:±0.2nH 47 0.11 11.0 520 LQW03AW3N4C00D3.4C:±0.2nH 43 0.15 11.0 440 LQW03AW3N5C00D3.5C:±0.2nH 43 0.15 12.0 440 LQW03AW3N6C00D3.6C:±0.2nH 36 0.23 11.0 340 LQW03AW3N7C00D3.7C:±0.2nH 38 0.23 11.0 340 LQW03AW3N9C00D3.9C:±0.2nH 48 0.07 11.0 650 LQW03AW4N3J00D4.3 J:±5% 45 0.12 11.0 480 LQW03AW4N7J00D4.7 J:±5% 45 0.09 9.5 620 LQW03AW5N1J00D5.1 J:±5% 45 0.14 9.5 480 LQW03AW5N4J00D5.4 J:±5% 46 0.21 9.5 420 LQW03AW5N6J00D5.6 J:±5% 37 0.33 8.3 330 LQW03AW5N8J00D5.8 J:±5% 47 0.16 8.8 460 LQW03AW6N2J00D6.2 J:±5% 39 0.22 9.9 360 LQW03AW6N8J00D6.8 J:±5% 42 0.18 7.7 460 LQW03AW7N5J00D7.5 J:±5% 41 0.24 7.5 400 LQW03AW8N2J00D8.2 J:±5% 40 0.26 8.5 290Customer Part numberMurataPart numberInductance Q(900 MHz)(Typicalvalue)DCresistance(Ω max.)Self-resonantfrequency(GHz min.)Ratedcurrent(mA)Nominalvalue(nH)ToleranceLQW03AW8N7J00D8.7J:±5% 39 0.42 7.5 290 LQW03AW9N1J00D9.1J:±5% 46 0.22 6.4 460 LQW03AW10NJ00D10.0J:±5% 37 0.46 7.2 250 LQW03AW11NJ00D11.0J:±5% 37 0.47 7.0 260 LQW03AW12NJ00D12.5J:±5% 39 0.54 6.0 280 LQW03AW13NJ00D13.0J:±5% 39 0.54 5.9 280 LQW03AW14NJ00D13.5J:±5% 37 0.53 6.0 240 LQW03AW15NJ00D15.5J:±5% 38 0.60 5.7 230 4. Testing ConditionsUnless otherwise specified Temperature: ordinary temperature (15°C to 35°C)Humidity: ordinary humidity [25% to 85% (RH)]In case of doubt Temperature: 20°C±2°CHumidity: 60% to 70% (RH)Atmospheric pressure: 86 kPa to 106 kPa5. Appearance and DimensionsUnit mass (typical value): 0.23 mg6. MarkingNo marking.7. Electrical PerformanceNo.ItemSpecificationTest method7.1 InductanceMeet chapter 3 ratings.Measuring equipment: Keysight E4991A or the equivalentMeasuring frequency: Inductance 250 MHz 1.0 nH to 3.9 nH 100 MHz 4.3 nH to 15.5 nH Measuring conditions:Measurement signal level: Approx. 0 dBm Measurement terminal distance: 0.3 mm Electrical length: 10.0 mmMeasuring fixture: Keysight 16197APosition the chip coil under test as shown in the measuring example below and connect it to the electrode by applying weight. Measurement example:Measuring method: see "Electrical performance: Measuring method for inductance/Q" in the chapter"16. Appendix".7.2 QMeet chapter 3 ratings.7.3 DC resistance Meet chapter 3 ratings. Measuring equipment: digital multimeter 7.4 Self-resonantfrequency Meet chapter 3 ratings.Measuring equipment: Keysight N5230A or theequivalent7.5 Rated currentProduct temperature rise: 20°C max.Apply the rated current specified in chapter 3.8. Mechanical PerformanceNo.ItemSpecificationTest method8.1 Bending testNo significant mechanical damage or no sign of electrode peeling off shall be observed. Test substrate: glass-epoxy substrate (100 mm × 40 mm × 0.8 mm) Pressurizing speed: 1 mm/sDeflection: 2 mm Holding time: 5 s8.2 VibrationAppearance shall have no significant mechanical damage.Oscillation frequency: 10 Hz to 55 Hz to 10 Hz, for approx. 1 minTotal amplitude: 1.5 mmTest time: 3 directions perpendicular to each other, 2 h for each direction (6 h in total)No.ItemSpecificationTest method8.3 Solderability90% or more of the outer electrode shall be covered with new solder seamlessly. Flux: immersed in ethanol solution [including anactivator with a chlorine conversion value of 0.06(wt)%]with a rosin content of 25(wt)% for 5 s to 10 s. Solder: Sn-3.0Ag-0.5Cu solderPre-heating: 150°C±10°C/60 s to 90 s Solder temperature: 240°C±5°C Immersion time: 4 s±1 s 8.4 Resistance tosoldering heatAppearance: No significant mechanical damage shall be observed.Inductance change rate: within ±5%Flux: immersed in ethanol solution [including anactivator with a chlorine conversion value of 0.06(wt)%] with a rosin content of 25(wt)% for 5 s to 10 s. Solder: Sn-3.0Ag-0.5Cu solderPre-heating: 150°C±10°C/60 s to 90 s Solder temperature: 270°C±5°C Immersion time: 5 s±1 sPost-treatment: left at a room condition for 24 h±2 h9. Environmental PerformanceThe product is soldered on a substrate for test. No. Item Specification Test method9.1 Heat resistanceAppearance: No significant mechanicaldamage shall be observed.Inductance change rate: within ±5%Q change rate: within ±20%Temperature: 125°C±2°CTest time: 1000 h (+48 h, -0 h)Post-treatment: left at a room condition for 24 h±2 h 9.2 Cold resistanceAppearance: No significant mechanical damage shall be observed.Inductance change rate: within ±5% Q change rate: within ±20%Temperature: -55°C±2°CTest time: 1000 h (+48 h, -0 h)Post-treatment: left at a room condition for 24 h±2 h9.3 HumidityAppearance: No significant mechanical damage shall be observed.Inductance change rate: within ±5% Q change rate: within ±20%Temperature: 70°C±2°CHumidity: 90% (RH) to 95% (RH) Test time: 1000 h (+48 h, -0 h)Post-treatment: left at a room condition for 24 h±2 h 9.4 Temperature cycle Appearance: No significant mechanicaldamage shall be observed.Inductance change rate: within ±5% Q change rate: within ±20%Single cycle conditions:Step 1: -55°C±2°C/30 min±3 minStep 2: ordinary temperature/10 min to 15 min Step 3: +125°C±2°C/30 min±3 minStep 4: ordinary temperature/10 min to 15 min Number of testing: 10 cyclesPost-treatment: left at a room condition for 24 h±2 h10. Specification of Packaging10.1 Appearance and dimensions of tape (8 mm width/paper tape)A (0.52)B (0.65) t 0.75 max.(in mm)10.2 Taping specificationsPacking quantity (Standard quantity) 10000 pcs/reelPacking method The products are placed in embossed cavities of a base tape and sealed by a cover tape.Feed hole position The feed holes on the base tape are on the right side when the cover tape is pulled toward the user. JointThe base tape and the cover tape are seamless.Number of missing productsNumber of missing products within 0.025% of the number per reel or 1 pc., whichever is greater, and are not continuous. The specified quantity per reel is kept.10.3 Break down force of tapeBreak down force of cover tape5 N min.10.4 Peeling off force of cover tapeSpeed of peeling off 300 mm/minPeeling off force0.1 N to 0.6 N (The lower limit is for typical value.)10.5 Dimensions of leader section, trailer section and reelA vacant section is provided in the leader (start) section and trailer (end) section of the tape for the product. The leader section is further provided with an area consisting only of the cover tape (or top tape). (See the diagram below.)10.6 Marking for reelCustomer part number, Murata part number, inspection number (*1), RoHS marking (*2), quantity, etc. *1 Expression of inspection No.: □□ ○○○○(1) (2) (3)(1) Factory code(2) Date First digit: year/last digit of yearSecond digit: month/Jan. to Sep.→1 to 9, Oct. to Dec.→O, N, D Third, Fourth digit: day (3) Serial No.*2 Expression of RoHS marking: ROHS- Y ( ) (1) (2)(1) RoHS regulation conformity(2) Murata classification number10.7 Marking on outer box (corrugated box)Customer name, purchasing order number, customer part number, Murata part number, RoHS marking (*2), quantity, etc.FCover tapetape165°to 180゜10.8 Specification of outer boxDimensions of outer box(mm) Standard reel quantity in outer box (reel)WDH186 186 935* Above outer box size is typical. It depends on a quantity of an order.11. Caution11.1 Restricted applicationsPlease contact us before using our products for the applications listed below which require especially high reliability for the prevention of defects which might directly cause damage to the third party's life, body or property. (1) Aircraft equipment (2) Aerospace equipment (3) Undersea equipment (4) Power plant controlequipment(5) Medical equipment (6) Transportation equipment (vehicles, trains, ships, etc.) (7) Traffic signal equipment (8) Disaster/crimeprevention equipment(9) Data-processing equipment (10) Applications of similar complexity and/or reliability requirements to the applications listed in the above11.2 Precautions on ratingAvoid using in exceeded the rated temperature range, rated voltage, or rated current.Usage when the ratings are exceeded could lead to wire breakage, burning, or other serious fault.11.3 Inrush currentIf an inrush current (or pulse current or rush current) that significantly exceeds the rated current is applied to the product, overheating could occur, resulting in wire breakage, burning, or other serious fault.11.4 Corrosive gasPlease refrain from use since contact with environments with corrosive gases (sulfur gas [hydrogen sulfide, sulfur dioxide, etc.], chlorine, ammonia, etc.) or oils (cutting oil, silicone oil, etc.) that have come into contact with the previously stated corrosive gas environment will result in deterioration of product quality or an open from deterioration due to corrosion of product electrode, etc. We will not bear any responsibility for use under these environments.12. Precautions for UseThis product is for use only with reflow soldering. It is designed to be mounted by soldering. If you want to use other mounting method, for example, using a conductive adhesive, please consult us beforehand.Also, if repeatedly subjected to temperature cycles or other thermal stress, due to the difference in the coefficient of thermal expansion with the mounting substrate, the solder (solder fillet part) in the mounting part may crack.The occurrence of cracks due to thermal stress is affected by the size of the land where mounted, the solder volume, and the heat dissipation of the mounting substrate. Carefully design it when a large change in ambient temperature is assumed.12.1 Land dimensionsThe following diagram shows the recommended land dimensions for reflow soldering.The land dimensions are designed in consideration of electrical characteristics and mountability. Use of other landdimensions may preclude achievement of performance. In some cases, it may result in poor solderability, including positional shift. If you use other land pattern, consider it adequately.a 0.23b 0.65c 0.4(in mm)WDLabelH12.2 Flux and solder usedFlux• Use a rosin-based flux that includes an activator with a chlorine conversion value of 0.06(wt)% to 0.1(wt)%. • Do not use a highly acidic flux with a halide content exceeding 0.2(wt)% (chlorine conversion value). • Do not use a water-soluble flux.Solder• Use Sn-3.0Ag-0.5Cu solder.• Standard thickness of solder paste: 80 μm to 100 μmIf you want to use a flux other than the above, please consult our technical department.12.3 Soldering conditions (reflow)• Pre-heating should be in such a way that the temperature difference between solder and product surface is limited to 150°C max.Cooling into solvent after soldering also should be in such a way that the temperature difference is limited to 100°C max. Insufficient pre-heating may cause cracks on the product, resulting in the deterioration of product quality. • Standard soldering profile and the limit soldering profile is as follows.The excessive limit soldering conditions may cause leaching of the electrode and/or resulting in the deterioration of product quality.Standard profile Limit profilePre-heating 150°C to 180°C/90 s±30 s 150°C to 180°C/90 s±30 s HeatingAbove 220°C/30 s to 60 sAbove 230°C/60 s max.Peak temperature 245°C±3°C 260°C/10 s Number of reflow cycles2 times2 times12.4 Reworking with soldering ironDo not perform reworking with a soldering iron on this product.12.5 Solder volumeSolder shall be used not to increase the volume too much.An increased solder volume increases mechanical stress on the product. Exceeding solder volume may cause the failure of mechanical or electrical performance.Limit ProfileStandard Profile90s±30s230℃260℃245℃±3℃220℃30s～60s60s max.180150Temp.(s)(℃)Time.12.6 Product's locationThe following shall be considered when designing and laying out PCBs.(1) PCB shall be designed so that products are not subject to mechanical stress due to warping the board. [Products direction]Products shall be located in the sideways direction (length: a < b) to the mechanical stress.(2) Components location on PCB separationIt is effective to implement the following measures, to reduce stress in separating the board.It is best to implement all of the following three measures; however, implement as many measures as possible to reduce stress.Contents of measures Stress level(1) Turn the mounting direction of the component parallel to theboard separation surface.A > D *1 (2) Add slits in the board separation part.A >B (3) Keep the mounting position of the component away from the board separation surface.A > C*1 A > D is valid when stress is added vertically to the perforation as with hand separation. If a cutting disc is used, stress will be diagonal to the PCB, therefore A > D is invalid.(3) Mounting components near screw holesWhen a component is mounted near a screw hole, it may be affected by the board deflection that occurs during the tightening of the screw.Mount the component in a position as far away from the screw holes as possible.12.7 Handling of substrateAfter mounting products on a substrate, do not apply any stress to the product caused by bending or twisting to the substrate when cropping the substrate, inserting and removing a connector from the substrate or tightening screw to the substrate. Excessive mechanical stress may cause cracking in the product.Bending Twisting〈Poor example 〉〈Good example〉ba12.8 CleaningThe product shall be cleaned under the following conditions.(1) The cleaning temperature shall be 60°C max. If isopropyl alcohol (IPA) is used, the cleaning temperature shall be 40°Cmax.(2) Perform ultrasonic cleaning under the following conditions. Exercise caution to prevent resonance phenomenon inmounted products and the PCB.Item RequirementPower 20 W/L max.Time 5 min max.Frequency 28 kHz to 40 kHz(3) CleanerAlcohol-based cleaner: IPAAqueous agent: PINE ALPHA ST-100S(4) There shall be no residual flux or residual cleaner. When using aqueous agent, rinse the product with deionized wateradequately and completely dry it so that no cleaner is left.* For other cleaning, consult our technical department.12.9 Storage and transportationStorage period Use the product within 12 months after delivery.If you do not use the product for more than 12 months, check solderability before using it.Storage conditions • The products shall be stored in a room not subject to rapid changes in temperature and humidity.The recommended temperature range is -10°C to +40°C. The recommended relative humidityrange is 15% to 85%.Keeping the product in corrosive gases, such as sulfur, chlorine gas or acid, oxidizes theelectrode, resulting in poor solderability or corrosion of the coil wire of the product.• Do not keep products in bulk packaging. Doing so may cause collision between the products orbetween the products and other products, resulting in core chipping or wire breakage.• Do not place the products directly on the floor; they should be placed on a palette so that they arenot affected by humidity or dust.• Avoid keeping the products in a place exposed to direct sunlight, heat or vibration.Transportation Excessive vibration and impact reduces the reliability of the products. Exercise caution whenhandling the products.12.10 Resin coatingThe inductance value may change due to high cure-stress of resin to be used for coating/molding products.A wire breakage issue may occur by mechanical stress caused by the resin, amount/cured shape of resin, or operatingcondition etc. Some resin contains some impurities or chloride possible to generate chlorine by hydrolysis under some operating condition may cause corrosion of wire of coil, leading to wire breakage.So, please pay your careful attention when you select resin in case of coating/molding the products with the resin.Prior to use the coating resin, please make sure no reliability issue is observed by evaluating products mounted on your board.12.11 Handling of product• Sharp material such as a pair of tweezers or other material such as bristles of cleaning brush, shall not be touched to the winding portion to prevent the breaking of wire.• Mechanical shock should not be applied to the products mounted on the board to prevent the breaking of the core.12.12 Handling with mounting equipment• With some types of mounting equipment, a support pin pushes up the product from the bottom of the base (paper) tape when the product is sucked with the pick-up nozzle.When using this type of equipment, detach the support pin to prevent the breaking of wire on the product.• In some cases, the laser recognition function of the mounting equipment may not recognize this product correctly.Please contact us when using laser recognition. (There is no problem with the permeation and reflection type.)13. Note(1) Please make sure that your product has been evaluated in view of your specifications with our product being mounted toyour product.(2) You are requested not to use our product deviating from the reference specifications.(3) The contents of this reference specification are subject to change without advance notice. Please approve our productspecifications or transact the approval sheet for product specifications before ordering.14. AppendixElectrical performance: Measuring method for inductance/Q (Q measurement is applicable only when the Q value is included in the rating table.)Perform measurement using the method described below. (Perform correction for the error deriving from the measuring terminal.)(1) Residual elements and stray elements of the measuring terminal can be expressed by the F parameter for the 2-poleterminal as shown in the figure below.(2) The product's impedance value (Zx) and measured impedance value (Zm) can be expressed as shown below, by usingthe respective current and voltage for input/output.Zm=V1I1Zx=V2I2(3) Thus, the relationship between the product's impedance value (Zx) and measured impedance value (Zm) is as follows.Zx=αZm-β1-ZmΓHere,α=D/A=1β=B/D=Zsm - (1 - Yom Zsm) ZssΓ=C/A=YomZsm: measured impedance of short chipZss: residual impedance of short chip (0.480 nH)Yom: measured admittance when measuring terminal is open (4) Calculate inductance Lx and Qx using the equations shown below.Lx=Im (Zx)2πfLx: inductance of chip coilQx: Q of chip coilf: measuring frequencyQx=Im (Zx) Re (Zx)。
Micro800 非隔离型热电偶功能性插件模块 产品目录号 2080-TC2 说明书
接线图Micro800™ 非隔离型热电偶功能性插件模块产品目录号2080-TC2/idc/groups/literature/documents/wd/208 0-wd006_-mu-p.pdfFR Cette publication est disponible en français sous forme électronique (fichier PDF).Pour la télécharger, rendez-vous sur la page Internet indiquée ci-dessus.IT Questa pubblicazione è disponibile in Italiano in formato PDF. Per scaricarla collegarsi al sito Web indicato sopra.DE Diese Publikation ist als PDF auf Deutsch verfügbar. Gehen Sie auf die oben genannte Web-Adresse, um nach der Publikation zu suchen und sie herunterzuladen.ES Esta publicación está disponible en español como PDF. Diríjase a la dirección web indicada arriba para buscar y descarga esta publicación.PT Esta publicação está disponível em portugués como PDF. Vá ao endereço web que aparece acima para encontrar e fazer download da publicação.ZHZC2 Micro800™ 非隔离型热电偶功能性插件模块出版物 2080-WD006A-ZH-P - 2010年9 月环境和机柜防止静电放电本设备适用于在污染等级 2 工业环境、过电压 II 类应用中使用 (如 IEC 60664-1 所定义)，在海拔高达 2000 米 (6562 英尺) 时不降额。
英飞凌 FS100R12N2T7_B15 EconoPACK 2 模块 数据表
EconoPACK ™2 模块 采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管带有温度检测NTC 特性•电气特性-V CES = 1200 V-I C nom = 100 A / I CRM = 200 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-焊接技术可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068 标准的相关测试，符合工业应用的要求。
描述FS100R12N2T7_B15EconoPACK ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 8模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .151封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE26nH 模块引线电阻,端子-芯片R CC'+EE'T C=25°C, 每个开关 2.7mΩ储存温度T stg-40125°C 模块安装的安装扭距M根据相应的应用手册进行安装M5, 螺丝36Nm 重量G180g 注:The current under continuous operation is limited to 50 A rms per connector pin.2IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T C = 95 °C100A 集电极重复峰值电流I CRM t P = 1 ms200A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 100 A, V GE = 15 V T vj = 25 °C 1.50 1.80VT vj = 125 °C 1.64T vj = 175 °C 1.72栅极阈值电压V GEth I C = 2.5 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V 1.8µC 内部栅极电阻R Gint T vj = 25 °C 1.5Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V21.7nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.076nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.01mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 100 A, V CE = 600 V,V GE = ±15 V, R Gon = 3.9 ΩT vj = 25 °C0.175µs T vj = 125 °C0.192T vj = 175 °C0.205上升时间(感性负载)t r I C = 100 A, V CE = 600 V,V GE = ±15 V, R Gon = 3.9 ΩT vj = 25 °C0.046µs T vj = 125 °C0.051T vj = 175 °C0.053关断延迟时间(感性负载)t doff I C = 100 A, V CE = 600 V,V GE = ±15 V, R Goff = 3.9 ΩT vj = 25 °C0.309µs T vj = 125 °C0.389T vj = 175 °C0.442下降时间(感性负载)t f I C = 100 A, V CE = 600 V,V GE = ±15 V, R Goff = 3.9 ΩT vj = 25 °C0.104µs T vj = 125 °C0.198T vj = 175 °C0.248开通损耗能量 (每脉冲)E on I C = 100 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 3.9 Ω, di/dt =1650 A/µs (T vj = 175 °C)T vj = 25 °C10.5mJ T vj = 125 °C14.7T vj = 175 °C16.8关断损耗能量 (每脉冲）E off I C = 100 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 3.9 Ω, dv/dt =3030 V/µs (T vj = 175 °C)T vj = 25 °C 6.68mJ T vj = 125 °C10.8T vj = 175 °C12.8(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C370At P≤ 7 µs,T vj=175 °C350结－外壳热阻R thJC每个 IGBT0.371K/W 外壳－散热器热阻R thCH每个 IGBT, λgrease= 1 W/(m*K)0.135K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F100A 正向重复峰值电流I FRM t P = 1 ms200A I2t-值I2t t P = 10 ms, V R = 0 V T vj = 125 °C1260A²sT vj = 175 °C1060表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 100 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM V R = 600 V, I F = 100 A,V GE = -15 V, -di F/dt =1650 A/µs (T vj = 175 °C)T vj = 25 °C57.7A T vj = 125 °C77.4T vj = 175 °C88.3(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值恢复电荷Q r V R = 600 V, I F = 100 A,V GE = -15 V, -di F/dt =1650 A/µs (T vj = 175 °C)T vj = 25 °C 6.9µC T vj = 125 °C15.4T vj = 175 °C19.4反向恢复损耗（每脉冲）E rec V R = 600 V, I F = 100 A,V GE = -15 V, -di F/dt =1650 A/µs (T vj = 175 °C)T vj = 25 °C 2.04mJ T vj = 125 °C 4.61T vj = 175 °C 6.66结－外壳热阻R thJC每个二极管0.592K/W 外壳－散热器热阻R thCH每个二极管, λgrease= 1 W/(m*K)0.148K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4负温度系数热敏电阻表 7特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定4 负温度系数热敏电阻6电路拓扑图图 17封装尺寸图 28模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002021-11-19Initial version商标所有参照产品或服务名称和商标均为其各自所有者的财产。
PL-05N接近开关中文资料
35-95%
开关频率
800 Hz 500 Hz
防护等级
IP67
外壳材料
PBT
接线方式
2米PVC电缆
PL-05N接近开关中文资料（翔京联合）
产品图片Photo
尺寸图Dimension drawing
特点描述Feature Description
型号规格Item Code
◆ 采用非接触式检测方式,响应快、频率高
◆ 逆极性,浪涌,过载,短路保护
◆ 外壳材料：PBT
◆ 防护等级IP67（IEC）
DC2线NO
安装方式
埋入式 非埋式
检测距离
5mm 8mm
电源电压
10…30VDC
外形规格
17*17*35
输出方式
NPN/PNP NO/NC
开关点偏移
≤±10%
迟滞范围
1…20%
重复误差
≤3%
负荷电流
≤200mA
残留电压
≤2.5V
消耗电流
≤10mA
保护回路
浪涌,过载,短路,逆极性保护
输出指示
黄色LED
环境温度
-25…70℃
PL-05D1-05N
NPN NC
PL-05NC
NPN NO+NC
——
PNP NO
PL-05P
PNP NC
PL-05PC
PNP NO+NC
——
AC 2 线 NO
PL-05A
AC 2 线 NC
PL-05AC
电气接线图Connection diagram
规格参数Specification
欧姆龙接近开关各类不同型号信息
欧姆龙接近开关各类不同型号信息项目型号TL-Q5MD□TL-N7MD□TL-N12MD□TL-N20MD□检测距离5mm±10%7mm±10%12mm±10%20mm±10%设定距离0～4mm 0～5.6mm 0～9.6mm 0～16mm应差距离检测距离的10%以下检测物体磁性金属（非磁性金属回降低检测距离。
参考「特性数据」→851页）标准检测物体铁18×18×1mm铁30×30×1mm铁40×40×1mm铁50×50×1mm 响应频率＊500Hz电源电压（使用电压范围）DC12～24V 脉动(p-p)10%以下(DC10～30V)漏电流0.8mA以下控制输出开关容量3～100mA残留电压3.3V以下（负载电流100mA、导线长2m时）显示灯D1型：动作显示(红色)、设定显示(绿色) D2型：动作表示(红色)动作状态（检测物体接近时）D1型：NOD2型：NC 详见「输入输出段回路图」的时间图→852页保护回路负载短路保护、浪涌吸收环境温度工作时、保存时：各-25～+70℃(不结冰、结露 )环境湿度工作时、保存时：各35～95%RH(不结露 )温度的影响-25～+70℃温度范围内，+23℃时检测距离的±10%以下电压的影响额定电源电压±15%范围内，额定电源电压时检测距离的±2.5%以下绝缘电阻50MΩ以上(DC500V兆欧表)充电部整体与外壳间耐电压AC1,000V 1min 充电部整体与外壳间振动（耐久）10～55Hz 上下振幅1.5mm X、Y、Z各方向 2h冲击（耐久）500m/s2 X、Y、Z各方向3次1,000m/s2 X、Y、Z各方向 10次保护结构IEC规格 IP67 〔JEM规格IP67g （耐浸型、耐油型）〕连接方式导线引出式(标准导线长2m)质量（捆包状态）约45g 约145g 约170g 约240g材质外壳耐热ABS 检测面附件使用说明书金属安装配件、使用说明书＊直流开关部的响应频率为平均值。
FCH072N60F
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
D
G D S
TO-247
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
SX440自动电压调节器（AVR）规格、安装和调节说明书
DESIGN DETAILSX440 AUTOMATIC VOLTAGEREGULATOR (AVR)SPECIFICATION, INSTALLATION AND ADJUSTMENTS General description Technical specificationSX440 is a half-wave phase-controlled thyristor type Automatic Voltage Regulator (AVR) and forms part of the excitation system for a brush-less generator.In addition to regulating the generator voltage, the AVR circuitry includes under-speed and sensing loss protection features. Excitation power is derived directly from the generator terminals.Positive voltage build up from residual levels is ensured by the use of efficient semiconductors in the power circuitry of the AVR.The AVR is linked with the main stator windings and the exciter field windings to provide closed loop control of the output voltage with load regulation of +/- 1.0%.In addition to being powered from the main stator, the AVR also derives a sample voltage from the output windings for voltage control purposes. In response to this sample voltage, the AVR controls the power fed to the exciter field, and hence the main field, to maintain the machine output voltage within the specified limits, compensating for load, speed, temperature and power factor of the generator.A frequency measuring circuit continually monitors the generator output and provides output under-speed protection of the excitation system, by reducing the output voltage proportionally with speed below a pre-settable threshold. A manual adjustment is provided for factory setting of the under frequency roll off point, (UFRO). This can easily be changed to 50 or 60 Hz in the field by push-on link selection.Provision is made for the connection of a remote voltage trimmer, allowing the user fine control of the generator's output.An analogue input is provided allowing connection to a Newage Power Factor controller or other external devices with compatible output.The AVR has the facility for droop CT connection, to allow parallel running with other similarly equipped generators. INPUTVoltage 190-264VacFrequency 50-60 Hz nominalPhase 1Wire 2OUTPUTVoltage max 90V dc at 207V ac inputCurrent continuous 4A dcIntermittent 6A for 10 secsResistance 15 ohms minimumREGULATION+/- 1% (see note 1)THERMAL DRIFT0.04% per deg. C change in AVR ambient (note 2)TYPICAL SYSTEM RESPONSEAVR response 20msFiled current to 90% 80 msMachine Volts to 97% 300msEXTERNAL VOLTAGE ADJUSTMENT+/-10% with 1 k ohm 1 watt trimmer (see note 3)UNDER FREQUENCY PROTECTIONSet point 95% Hz (see note 4)Slope 170% down to 30 HzUNIT POWER DISSIPATION12 watts maximumBUILD UP VOLTAGE4 Volts @ AVR terminalsANALOGUE INPUTMaximum input +/- 5V dc (see note 5)Sensitivity 1v for 5% Generator Volts (adjustable)Input resistance 1k ohmQUADRATURE DROOP INPUT10 ohms burdenMax. sensitivity: 0.07 A for 5% droop 0PFMax. input: 0.33AENVIRONMENTALVibration 20-100Hz 50mm/sec100Hz – 2kHz 3.3gOperating temperature -40 to +70 o CRelative Humidity 0-70 o C 95% (see note 6)Storage temperature -55 to +80 o C NOTES1. With 4% engine governing.2. After 10 minutes.3. Applies to Mod status S onwards. Generator de-ratemay apply. Check with factory.4. Factory set, semi-sealed, jumper selectable.5. Any device connected to the analogue input must befully floating (galvanically isolated from ground), with an insulation strength of 500V ac.6. Noncondensing.DESIGN DETAILThe main functions of the AVR are:Potential Divider and Rectifier takes a proportion of the generator output voltage and attenuates it. The potential divider is adjustable by the AVR Volts potentiometer and external hand trimmer (when fitted). The output from the droop CT is also added to this signal. An isolating transformer is included allowing connection to various winding configurations. A rectifier converts the a.c. input signal into d.c. for further processing.The Sensing Loss Detector is an electronic changeover switch, which normally connects the Amplifier (Amp) to the Voltage Sensing input and automatically changes over to the Power input when the normal sensing voltage is lost.The DC Mixer adds the Analogue input signal the Sensing signal.The Amplifier (Amp) compares the sensing voltage to the Reference Voltage and amplifies the difference (error) to provide a controlling signal for the power devices. The Ramp Generator and Level Detector and Driver infinitely control the conduction period of the Power Control Devices and hence provides the excitation system with the required power to maintain the generator voltage within specified limits.The Stability Circuit provides adjustable negative ac feedback to ensure good steady state and transient performance of the control system.The Low Hz Detector measures the period of each electrical cycle and causes the reference voltage to be reduced approximately linearly with speed below a presettable threshold. A Light Emitting Diode gives indication of underspeed running.The Synchronising circuit is used to keep the Ramp Generator and Low Hz Detector locked to the generator waveform period.The Low Pass Filter prevents distorted waveforms affecting the operation of the AVR control circiutPower Control Devices vary the amount of exciter field current in response to the error signal produced by the Amplifier.Suppression components are included to prevent sub cycle voltage spikes damaging the AVR components and also to reduce the amount of conducted noise on the generator terminals..The Power Supply provides the required voltages for the AVR circuitry.Hand Trimmer Analogue Input DroopFITTING AND OPERATINGSUMMARY OF AVR CONTROLSCONTROL FUNCTION DIRECTIONVOLTS TO ADJUST GENERATOR OUTPUT VOLTAGE CLOCKWISE INCREASES OUTPUT VOLTAGE STABILITY TO PREVENT VOLTAGE HUNTING CLOCKWISE INCREASE THE DAMPING EFFECTUFRO TO SET THE UFRO KNEE POINT CLOCKWISE REDUCES THE KNEE POINTFREQUENCYDROOP TO SET THE GENERATOR DROOP TO 5% AT 0PF CLOCKWISE INCREASES THE DROOPVTRIM TO OPTIMISE ANALOGUE INPUT SENSITIVITY CLOCKWISE INCREASES THE GAIN OR SENSITIVITY ADJUSTMENT OF AVR CONTROLSVOLTAGE ADJUSTMENTThe generator output voltage is set at the factory, but can be altered by careful adjustment of the VOLTS control on the AVR board, or by the external hand trimmer if fitted. Terminals 1 and 2 on the AVR will be fitted with a shorting link if no hand trimmer is required.CAUTION Do not increase the voltage above the rated generator voltage. If in doubt, refer to the rating plate mounted on the generator case.CAUTION Do not ground any of the hand trimmer terminals as these could be above earth potential. Failure to observe this could cause equipment damage.If a replacement AVR has been fitted or re-setting of the VOLTS adjustment is required, proceed as follows: CAUTION1. Before running generator, turn the VOLTS control fully anti-clockwise.2. Turn remote volts trimmer (if fitted) to midway position.3. Turn STABILITY control to midway position.4. Connect a suitable voltmeter (0-300V ac) acrossline to neutral of the generator.5. Start generator set, and run on no load at nominal frequency e.g. 50-53Hz or 60-63Hz.6. If the red Light Emitting Diode (LED) is illuminated, refer to the Under Frequency Roll Off (UFRO) adjustment.7. Carefully turn VOLTS control clockwise until rated voltage is reached.8. If instability is present at rated voltage, refer to stability adjustment, then re-adjust voltage if necessary.9. Voltage adjustment is now completed.FITTING AND OPERATINGTD_SX440 AVR_03.06_04_GBBarnack Road • Stamford • Lincolnshire • PE9 2NB Tel: 00 44 (0)1780 484000 • Fax: 00 44 (0)1780 484100© 2006 Cummins Generator Technologies Limited.STABILITY ADJUSTMENTThe AVR includes a stability or damping circuit to provide good steady state and transient performance of the generator.The correct setting can be found by running the generator at no load and slowly turning the stability control anti-clockwise until the generator voltage starts to become unstable.The optimum or critically damped position is slightly clockwise from this point (i.e. where the machine volts are stable but close to the unstable region).OPTIMUM RESPONSE SELECTIONThe stability selection ‘jumper’ should be correctly linked, A-B, B-C or A-C at the bottom of the board for the frame size of the generator, (see drawing).UNDER FREQUENCY ROLL OFF (UFRO) ADJUSTMENTThe AVR incorporates an underspeed protection circuit which gives a volts/Hz characteristic when the generator speed falls below a presettable threshold known as the "knee" point.The red Light Emitting Diode (LED) gives indication that the UFRO circuit is operating.The UFRO adjustment is preset and sealed and only requires the selection of 50 / 60Hz using the jumper link.For optimum setting, the LED should illuminate as the frequency falls just below nominal, i.e. 47Hz on a 50Hz system or 57Hz on a 60Hz system.DROOP ADJUSTMENTGenerators intended for parallel operation are fitted with a quadrature droop C.T. which provides a power factor dependent signal for the AVR. The C.T. is connected to S1, S2 on the AVR.The DROOP adjustment is normally preset in the works to give 5% voltage droop at full load zero power factor.Clockwise increases the amount of C.T. signal injected into the AVR and increases the droop with lagging power factor (cos Ø). With the control fully anti-clockwise there is no droop.TRIM ADJUSTMENTAn analogue input (A1 A2) is provided to connect to the Newage Power Factor Controller or other devices. It is designed to accept dc signals up to +/- 5 volts.CAUTION Any devices connected to this input must be fully floating and galvanically isolated from ground, with an insulation capability of 500 Vac. Failure to observe this could result in equipment damage.The dc signal applied to this input adds to the AVR sensing circuit. A1 is connected to the AVR 0 volts. Positive on A2 increases excitation. Negative on A2 decreases excitation.The TRIM control allows the user to adjust the sensitivity of the input. With TRIM fully anti-clockwise the externally applied signal has no effect. Clockwise it has maximum effect.Normal setting is fully clockwise when used with a Newage Power Factor Controller.。
SVF5N60T(F)(D)(MJ)说明书_1.2-L
图3. 导通电阻vs.漏极电流 3.2
3.0
VGS=10V
2.8
VGS=20V
2.6
2.4
2.2
2.0
1.8
注：TJ=25°C
1.6
0
2
4
6
8
10
漏极电流 – ID(A)
电容(pF)
1200 1000
图5. 电容特性
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
3. 基本上不受工作温度的影响。
最小值 ------
典型值 ----
190 0.53
最大值 5 20 1.4 ---
单位
A
V ns µC
杭州士兰微电子股份有限公司
版本号：1.2 2011.09.13 共10页 第3页
SVF5N60T/F/D/MJ 说明书
SVF5N60F
600
±30
5
3.1
20
120
40
0.96
0.32
242 -55～+150 -55～+150
单位
V V
A
A W W/°C mJ °C °C
热阻特性
参数名称
芯片对管壳热阻 芯片对环境的热阻
符号
RθJC RθJA
SVF5N60T 1.04 62.5
参数范围
SVF5N60D SVF5N60MJ
符号
测试条件
源极电流 源极脉冲电流 源-漏二极管压降 反向恢复时间 反向恢复电荷 注：
IS
MOS 管中源极、漏极构成的反偏
ISM
P-N 结
VSD IS=5.0A，VGS=0V
4N60说明书NCE
N-Channel Super Junction Power MOSFET ⅡV DS @T jmax 650V R DS(ON) MAX 1200 m ΩI D 4 AGeneral DescriptionThe series of devices use advanced super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliantApplication● Power factor correction （PFC ） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply （UPS ）Package Marking And Ordering InformationDeviceDevice PackageMarkingNCE60R1K2 TO-220 NCE60R1K2 NCE60R1K2D TO-263 NCE60R1K2D NCE60R1K2F TO-220F NCE60R1K2FTable 1.Absolute Maximum Ratings (T C =25℃)Parameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain-Source Voltage (V GS=0V ） V DS600 V Gate-Source Voltage (V DS=0V) V GS ±30 VContinuous Drain Current at Tc=25°C I D (DC) 4 4* AContinuous Drain Current at Tc=100°C I D (DC) 2.5 2.5 APulsed drain current(Note 1)I DM (pluse) 12 12 A Maximum Power Dissipation(Tc=25℃) Derate above 25°CP D46 0.3728.5 0.23WW/°CSingle pulse avalanche energy (Note2)E AS 130mJAvalanche current(Note 1)I AR 2 A Repetitive Avalanche energy ，t AR limited by T jmax(Note 1)E AR0.2mJSchematic diagramTO-263 TO-220 TO-220FParameter SymbolNCE60R1K2NCE60R1K2DNCE60R1K2F Unit Drain Source voltage slope, V DS ≤480 V, dv/dt 50 V/ns Reverse diode dv/dt ，V DS ≤480 V,I SD <I Ddv/dt 15V/nsOperating Junction and Storage Temperature RangeT J ,T STG -55...+150 °C* limited by maximum junction temperatureTable 2. Thermal CharacteristicParameter Symbol Value UnitThermal Resistance ，Junction-to-Case （Maximum ） R thJC 2.7 4.4 °C /WThermal Resistance ，Junction-to-Ambient （Maximum ）R thJA62 80 °C /WTable 3. Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOn/off statesDrain-Source Breakdown VoltageBV DSSV GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) I DSS V DS =600V,V GS =0V1μAZero Gate Voltage Drain Current(Tc=125℃) I DSS V DS =600V,V GS =0V 50 μA Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V±100nAGate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2.5 3 3.5 V Drain-Source On-State Resistance R DS(ON)V GS =10V, I D = 2.5A 1000 1200m ΩDynamic CharacteristicsForward Transconductance g FS V DS = 20V, I D = 2.5A4SInput Capacitance C lss 280 PFOutput CapacitanceC oss 26 PFReverse Transfer Capacitance C rssV DS =50V,V GS =0V,F=1.0MHz2.3 PF Total Gate Charge Q g 6.5 10 nCGate-Source Charge Q gs 1.3 nCGate-Drain Charge Q gd V DS =480V,I D =4A,V GS =10V2.5 nC Intrinsic gate resistance R Gf = 1 MHz open drain2.5ΩSwitching timesTurn-on Delay Time t d(on) 6 nSTurn-on Rise Time t r 3 nS Turn-Off Delay Time t d(off) 48 60 nSTurn-Off Fall Timet fV DD =380V,I D =2.5A, R G =20Ω,V GS =10V 8 15 nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode) I SD 4 APulsed Source-drain current(Body Diode) I SDMT C =25°C12 A Forward On Voltage V SD Tj =25°C,I SD =4A,V GS =0V1 1.3 V Reverse Recovery Time t rr 150 nS Reverse Recovery Charge Q rr 0.85 uCPeak reverse recovery currentI rrmTj=25°C,I F =4A,di/dt=100A/μs 11 ANotes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature2. Tj=25℃,VDD=50V,VG=10V, R G =25ΩTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)Figure1. Safe operating area for TO-220,TO-263 Figure2. Source-Drain Diode Forward VoltageFigure3. Output characteristics Figure4. Transfer characteristicsFigure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction TemperatureFigure7. BV DSS vs Junction Temperature Figure8. Maximum I D vs Junction TemperatureFigure9. Gate charge waveforms Figure10. CapacitanceFigure11. Transient Thermal Impedance for TO-220,TO-263 Figure12. Safe operating area for TO-220FFigure13. Transient Thermal Impedance for TO-220FTest circuit1）Gate charge test circuit & Waveform2）Switch Time Test Circuit：3）Unclamped Inductive Switching Test Circuit & WaveformsTO-263-2L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.470 4.670 0.176 0.184A1 0.000 0.150 0.000 0.006B 1.170 1.370 0.046 0.054b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.05410.310 0.394 0.406D 10.010E 8.500 8.900 0.335 0.350e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.20415.450 0.593 0.608L 15.050L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V 5.600 REF 0.220 REFTO-220-3L-C Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.0550.390 0.40410.250D 9.910E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150TO-220F Package InformationNCE60R1K2,NCE60R1K2D,NCE60R1K2F ATTENTION:■Any and all NCE products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications.■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein.■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD.■Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use.■This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.。
施耐德Easy Altivar ATV610 变频器编程手册 说明书
[简单起动] SYS– .......................................................................................32 [Macro-configuration] CFG- 菜单........................................................33 [简单起动] SIM- 菜单...........................................................................34 [修改的参数] LMD- 菜单 .......................................................................38
Easy Altivar ATV610
变频器 编程手册
EAV64393.07 05/2024
法律声明
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欧姆龙视觉传感器介绍
ৃ㓪ࠊ఼ CJ2 CPUऩܗ
ᴎ఼Ҏࠊ఼
FQ-M EtherCAT⬉㓚 FQ-MWNL/-WN (RJ45/M12)
FQ-MS@@@ FQ-MS@@@-M
FQ-M I/O⬉㓚FQ-MWDL/-MWD
䚼✻ᯢ˄FL㋏߫˅
✻ᯢࠊ఼ FL-TCC1
⬉⑤ DC24V
㾺থ䕧ܹ Ӵᛳ఼
䞣 ᮟ䕀㓪ⷕ఼
CCTV镜头
类型
FL系列用
型号 FQ-MWDL005 FQ-MWDL010 FQ-MWD005 FQ-MWD010
型号 FQ-XPM FQ-AC@ * FQ-BAT1 FQ-XT FQ-XH HMC-SD291 HMC-SD491
型号
W4S1-03B W4S1-05B W4S1-05C
型号
GX-JC03 GX-JC06
新的基于轮廓的检索算法为取放应用带来独一无二的性能。变化的照明条件、反射、物体倾斜或部分 隐藏的物体不再是问题。无论同时检测的物体数量多少，即便高速时，FQ-M也可获得稳定的结果。
同类最佳的性能
360°检测、
每分钟5000件的高速处理。
30
物 25 体 数 20
15
10 146
15ms
时间(ms)
161
FQ-M EtherCAT ⬉㓚 FQ-MWNEL/-MWNE (M12/M12)
FQ-M I/O⬉㓚
FQ-M EtherCAT ⬉㓚 FQ-MWNL/-WN (M12/RJ45)
⬉⑤ DC24V
㾺থ䕧ܹ Ӵᛳ఼
䞣 ᮟ䕀㓪ⷕ఼
⫼Ѣ I/O ࠊⱘ PLC
* Sysmac Studio㾺ᓣপ᱃఼᮴⊩ϔ䍋Փ⫼DŽ䖲Ѡ㗙ᯊˈSysmac StudioᇚӬܜDŽ Փ⫼Sysmac Studioᷛޚ⠜ᴀᇍᴎ఼㞾ࡼ࣪ࠊ఼NJ㋏߫䖯㸠䆒ᅮᯊˈ䇋⫼USB䖲Ethernet㔥㒰䖲⬉㛥ϢNJDŽ
中航MOS管型号大全
MOS Wafer Product (中低压管)
产品料号 8205 SKD8205B SKD8205C SKD830R SKD414J SKD413J SKD2301J SKD401J SKD3401J SKD405J/E SKD407D/E SKD403D SKD400J SKD41பைடு நூலகம்J/D/K SKD404D SKD406D/M SKD402D SKD442T/D SKD456T SKD470T SKD408T SKD440T/D SKD424T/D SKD436T SKD438T SKD460T SKD414T SKD464T SKD416T SKD454T SKD426T SKD432T SKD462T SKD482T SKD472T SKD446T/S SKD420T SKD448T SKD492T SKD452T SKD428T SKD430T/S SKD478T/D SKD410T SKD418T/S SKD450T SKD422T SKD496T/S CODE
量产 量产 量产 量产 量产 量产 量产 量产
BMS Area (电动车保护板/电动工具 MOSFET用料建议)
产品料号 SKD406D SKD407D/E SKD442T/D SKD456T SKD470T SKD408T SKD454T SKD426T SKD432T SKD472T SKD420T SKD448T SKD452T SKD428T SKD430T/S SKD492T SKD450T SKD422T SKD496T/S CODE PMA PLA PAA PEB PAB PFB P7B PHA PQA PYA PGA PGB P6B PKA PSA PVB PWA PJA PRA N/P管 N MOS P MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS N MOS 成品 样品 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 可提供 封装 TO-252 TO-252/SOP-8 TO-220/TO-252 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220/TO-263 TO-220 TO-220 TO-220 TO-220/TO-263 VDS VGS (V) (±V) 30 -30 40 40 40 40 60 60 60 75 80 80 80 80 80 80 100 100 100 20 25 20 20 20 20 25 25 25 25 25 25 25 25 25 25 25 25 25 Vth (V) 1.6 1.4 2 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 ID (A) 100 -12 120 150 180 230 150 180 210 80 110 80 130 150 180 80 90 140 170 Rds-on (mΩ) max 10V 4 11 4 3.2 2.5 2.3 4.5 3.5 2.7 7 7 8 5.5 4 3 8 7.3 6.2 4.5 4.5V 6 18 2.5V 1.8V 市场参考料号 AOD472/P0603BD/IR8726 AO4407 IRF1404 IRF1404 IRF1404Z IRF1404 90N06 IRFB3206 IRF3808/IRF3607/ST75N75 ST75N75/ IRFB3307/IRFB3808 IRFB3207 IRFB4410 IRFB4310 IRFB4110 供应情况
EN61000-4-4
為何電快速瞬變脈沖群如此 重要?
Fast Transients
一般人對快速瞬變脈沖波認知不足 可對處理器電腦相關程序裝置造成影響 會損害半導體
引起寬頻傳導及輻射干擾
發生之原因
開關切換期間,鍵盤按鈕期間產生
斷路開關 自動開關切換期間 電機繼電器 接觸器
2007-1-9&10
10cm 絕緣物
EFT 耦合夾具
接地板1m x1m
˙針對待測物必須放在側桌情況下測時桌高需為80cm
Once at a time (Line to Ground )
Common model test
同一時間僅有一相線(線 對 地)-共模例如下圖L1Grounding
L1 L2 L3 N PE Vs
10cm 絕緣物體
EUT
Grounding
2007-1-9&10
All together
Common model test(共模測試)
同一時間所有相線(all線 對 地)-共模例如下圖
L1,L2,L3,N,PE - Grounding 快速瞬變脈沖波經由 (CDN)耦合去耦合網路 供電至EUT之供電端子, 其他如信號線,控制線 等則經由容抗式耦合 夾具(capacitive coupling clamp)做測 試
2007-1-9&10
如何量測電快速瞬變脈沖群波
需使用到之量測校正設備: 1. TDS 需有高頻頻寬,取樣數率快之數 位儲存示波器 2. Calibration set (內含50Ώ 及 1k Ώ衰減器)
EFT/Burst 波形擷取方式
EFT Cal set
由於校正系統皆須於 50ohm 阻抗環境下量測 故於示波器所得到之電 壓測值為設定值之ㄧ半 值,例如 量測波值設定 為2KV 則於示波器得到 之值為1KV
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NCE N-Channel Enhancement Mode Power MOSFETV DS @T jmax 650 V R DS(ON)950m ΩI D 4.8 AGeneral DescriptionThe series of devices use advanced super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche TestedApplication● Power factor correction （PFC ）● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply （UPS ）Package Marking And Ordering InformationDeviceDevice PackageMarkingNCE05N60D TO-263NCE05N60 TO-220NCE05N60F TO-220FNCE05N60Table 1. Absolute Maximum Ratings (T C =25℃)Parameter Symbol NCE05N60NCE05N60DNCE05N60F UnitDrain-Source Voltage (V GS=0V ） V DS600 V Gate-Source Voltage (V DS=0V)V GS ±30VContinuous Drain Current at Tc=25°CI D (DC) 4.8 4.8* AContinuous Drain Current at Tc=100°C I D (DC) 3 3* APulsed drain current (Note 1)I DM (pluse) 14.4 14.4* ADrain Source voltage slope, VDS = 480 V, ID = 4.8 A, Tj = 125 °Cdv/dt50V/nsMaximum Power Dissipation(Tc=25℃) Derate above 25°CP D 50 0.431 0.25WW/°CSingle pulse avalanche energy(Note2)E AS130mJSchematic diagramTO-263 TO-220 TO-220F深圳市众达安科技有限公司Parameter Symbol Value UnitAvalanche current (Note 1)I AR 4.8 A Repetitive Avalanche energy ，t AR limited by T jmax(Note 1)E AR0.4 mJOperating Junction and Storage Temperature RangeT J ,T STG -55...+150 °C* limited by maximum junction temperatureTable 2. Thermal CharacteristicParameter Symbol NCE05N60NCE05N60DNCE05N60FUnitThermal Resistance ，Junction-to-Case （Maximum ） R thJC 2.5 4 °C /WThermal Resistance ，Junction-to-Ambient （Maximum ）R thJA62 80 °C /WTable 3. Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol Condition Min Typ Max UnitOn/off statesDrain-Source Breakdown VoltageBV DSSV GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) I DSS V DS =600V,V GS =0V1μAZero Gate Voltage Drain Current(Tc=125℃) I DSS V DS =600V,V GS =0V 50 μA Gate-Body Leakage CurrentI GSSV GS =±30V,V DS =0V ±100nAGate Threshold VoltageV GS(th)V DS =V GS ,I D =250μA 2.5 3 3.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =3A 850 950 m Ω Dynamic Characteristics Forward Transconductance g FSV DS = 20V, I D = 3A5SInput Capacitance C lss 480 PFOutput CapacitanceC oss 25 PFReverse Transfer Capacitance C rssV DS =100V,V GS =0V,F=1.0MHz2 PF Total Gate ChargeQ g 12 25 nCGate-Source Charge Q gs 2.2 nCGate-Drain Charge Q gdV DS =480V,I D =4.8A,V GS =10V4.5 nC Switching timesTurn-on Delay Time t d(on) 6 nSTurn-on Rise Time t r 2.5 nS Turn-Off Delay Time t d(off) 55 80 nSTurn-Off Fall Timet fV DD =380V,I D =4.8A, R G =18Ω,V GS =10V 9 14 nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode) I SD 4.8 APulsed Source-drain current(Body Diode) I SDMT C =25°C14.4 A Forward on voltage V SD Tj =25°C,I SD =4.8A,V GS =0V 1 1.3 VReverse Recovery Time t rr 300 nSReverse Recovery ChargeQ rrTj=25°C,I F =4.8A,di/dt=100A/μs2.6 uC Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature2. Tj=25℃,VDD=50V,VG=10V, R G =25Ω深圳市众达安科技有限公司TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)Figure1. Safe operating area Figure2. Safe operating area for NCE05N60FFigure3. Source-Drain Diode Forward Voltage Figure4. OutputcharacteristicsFigure5. Transfer characteristics Figure6. Static drain-source on resistance深圳市众达安科技有限公司Figure7. R DS(ON)vs Junction Temperature Figure8. BV DSS vs Junction Temperature Figure9. Maximum I Dvs Junction Temperature Figure10. Gate chargewaveformsFigure11. Capacitance Figure12. Transient Thermal Impedance深圳市众达安科技有限公司Figure13. Transient Thermal Impedance for NCE05N60F深圳市众达安科技有限公司Test circuit1）Gate charge test circuit & Waveform2）Switch Time Test Circuit ：3）Unclamped Inductive Switching Test Circuit & Waveforms深圳市众达安科技有限公司TO-263-2L Package InformationDimensions In MillimetersDimensions In Inches SymbolMin.Max.Min.Max.A 4.470 4.670 0.176 0.184A1 0.000 0.150 0.000 0.006B 1.170 1.370 0.046 0.054b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.310 0.530 0.012 0.021c1 1.170 1.370 0.046 0.054D 10.010 10.310 0.394 0.406E 8.500 8.900 0.335 0.350e2.540 TYP.0.100 TYP.e1 4.980 5.180 0.196 0.204L 15.050 15.450 0.593 0.608L1 5.080 5.480 0.200 0.216L2 2.340 2.740 0.092 0.108L3 1.300 1.700 0.051 0.067 V5.600 REF0.220 REF深圳市众达安科技有限公司TO-220-3L Package InformationDimensions In MillimetersDimensions In Inches SymbolMin.Max.Min.Max.A 4.470 4.670 0.176 0.184A1 2.520 2.820 0.099 0.111b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.055D 10.010 10.350 0.394 0.407E 8.500 8.900 0.335 0.350E1 12.060 12.460 0.475 0.491e2.540 TYP.0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.590 2.890 0.102 0.114 H8.440 REF.0.332 REF.h 0.000 0.300 0.000 0.012L 13.400 13.800 0.528 0.543L1 3.560 3.960 0.140 0.156 V 6.060 REF. 0.239 REF. I 6.600 REF.0.260 REF.Φ3.735 3.935 0.147 0.155深圳市众达安科技有限公司TO-220F Package InformationDimensions In MillimetersDimensions In InchesSymbolMin. Max. Min. Max.A 4.300 4.700 0.169 0.185 A1 1.300REF0.051REFA2 2.800 3.200 0.110 0.126A3 2.500 2.900 0.098 0.114b 0.500 0.750 0.020 0.030b1 1.100 1.350 0.043 0.053b2 1.500 1.750 0.059 0.069c 0.500 0.750 0.020 0.030D 9.960 10.360 0.392 0.408E 14.800 15.200 0.583 0.598e 2.540TYP. 0.100TYPF 2.700REF0.106REFΦ3.500REF 0.138REFh1 0.800REF 0.031REFh2 0.500REF0.020REFL 28.000 28.400 1.102 1.118L1 1.700 1.900 0.067 0.075L2 1.900 2.100 0.075 0.083深圳市众达安科技有限公司Pb-Free ProductATTENTION:■ Any and all NCE products described or contained herein do not have specifications that can handle applications that requireextremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications.■ NCE assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein.■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, andfunctions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlledunder any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, includingphotocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD.■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volumeproduction. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use.■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.深圳市众达安科技有限公司。