TLP3131(TP,F);中文规格书,Datasheet资料

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AP3101规格书

-
-
CE 端输入
ISH VCE=VFB(S)×0.95
-0.1
-
电流
ISL VCE=0V
-0.1
-
软启动时间
tss
-
2
效率
EFFI
-
85
1. VOUT(S)表示输出电压设定值。VOUT表示实际输出电压的典型值。 2. VOUT(S)可根据VFB值与输出电压设定电阻（R1,R2）之间的比例来进行设定。 3. VFB(S)表示FB电压的设定值。 4. 关于VDD/VOUT分离型产品
PFM 切换控制电路，在负载较轻时，将工作状态
切换为占空系数为15%的PFM 控制电路，可以防止因IC 的工作电流引起的效率降低。
特点：
l 低电压工作：可保证以 0.9 V (IOUT = 1 mA)启动 l 占空比: 内置 PWM / PFM 切换控制电路(15 ~ 78%) l 振荡频率：300KHz l 输出电压：在 1.5～6.5V 之间 l 输出电压精度：±2﹪ l 软启动功能：2mS l 带开/关控制功能 l 外接部件：线圈、二极管、电容器、晶体管 l 封装形式：SOT-23-5
-
±50
振荡频率
fosc
-
255
300
最大占空系数 MAXDUTY VFB=VFB(S)× 0.95
-
78
模式切换占空系数 PFMDUTY VFB=VFB(S)× 1.5,没有负载
-
15
VSH
测定 EXT 端振荡
0.75
-
CE 端输入
VSL1 判断 EXT 端 VOUT≥1.5V
-
-
电压
VSL2
振荡停止 VOUT<1.5V

2SK3131_06资料

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)2SK3131Chopper Regulator DC −DC Converter and Motor Drive Applicationsz Fast reverse recovery time : t rr = 105 ns (typ.) z Built-in high-speed free-wheeling diodez Low drain −source ON resistance : R DS (ON) = 0.085 Ω (typ.) z High forward transfer admittance : |Y fs | = 35 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 500 V) z Enhancement mode : V th = 2.4~3.4 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 500 V Drain −gate voltage (R GS = 20 k Ω) V DGR 500 V Gate −source voltage V GSS ±30VDC (Note 1) I D 50 A DC Drain currentPulse (Note 1)I DP 200 A Drain power dissipation (Tc = 25°C)P D250 WSingle pulse avalanche energy(Note 2) E AS525 mJ Avalanche currentI AR 50 A Repetitive avalanche energy (Note 3) E AR 25 mJ Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch −c) 0.5 °C / W Thermal resistance, channel to ambientR th (ch −a)35.7°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 357 μH, R G = 25 Ω, I AR = 50 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC — JEITA —TOSHIBA 2-21F1B Weight: 9.75 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage currentI GSS V GS = ±25 V , V DS = 0 V — — ±10μAGate −source breakdown voltage V (BR) GSSI G = ±100 μA , V DS = 0 V ±30 — — V Drain cut −off currentI DSS V DS = 500 V , V GS = 0 V — — 100μADrain −source breakdown voltage V (BR) DSSI D = 10 mA , V GS = 0 V 500 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.4 — 3.4 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 25 A— 0.085 0.11ΩForward transfer admittance |Y fs | V DS = 10 V, I D = 25 A15 35 — SInput capacitanceC iss — 11000 —Reverse transfer capacitance C rss — 2100 — Output capacitanceC oss V DS = 10 V, V GS = 0 V, f = 1 MHz — 4200 — pF Rise timetr—105—Turn −on timet on — 160 —Fall timet f — 65 —Switching timeTurn −off timet off— 245 —nsTotal gate charge (Gate −sourceplus gate −drain) Q g —280 — Gate −source charge Q gs — 150 — Gate −drain (“miller”) chargeQ gdV DD ≈ 400 V, V GS = 10 V, I D = 50 A — 130 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1) I DR— — — 50 APulse drain reverse current(Note 1) I DRP— — — 200 AForward voltage (diode) V DSF V DR = 25 A, V GS = 0 V — — −1.7 V Reverse recovery time t rr — 105 — ns Reverse recovery chargeQ rrI DR = 50 A, V GS = 0 VdI DR / dt = 100 A / μs— 380 — nCMarkinglead (Pb)-free finish.⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD VDSS VDSS AS V B B I L 21E 2R G = 25 ΩV DD = 90 V , L = 357 μHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

TL431datasheet

© Motorola, Inc. 1998
Rev 6
1
Symbol
Reference (R)
Cathode (K)
Anode (A)
TL431, A, B Series
Representative Schematic Diagram Component values are nominal
Cathode (K)
Symbol RθJA RθJC
D, LP Suffix Package
178 83
P Suffix Package
114 41
DM Suffix Package
240 –
Unit V mA
Unit °C/W °C/W
2
MOTOROLA ANALOG IC DEVICE DATA
TL431, A, B Series
Storage Temperature Range
Total Power Dissipation @ TA = 25°C Derate above 25°C Ambient Temperature D, LP Suffix Plastic Package P Suffix Plastic Package DM Suffix Plastic Package
Reference Input Voltage Deviation Over Temperature Range (Figure 1, Notes 1, 2) VKA= Vref, IK = 10 mA
Ratio of Change in Reference Input Voltage to Change in Cathode to Anode Voltage IK = 10 mA (Figure 2), ∆VKA = 10 V to Vref ∆VKA = 36 V to 10 V

IRLML2803TRPBF;中文规格书,Datasheet资料

Gate-to-Source Charge
0.48 0.72 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
1.1 1.7
VGS = 10V, See Fig. 6 and 9
td(on)
Turn-On Delay Time
3.9

2
/
ID , Drain-to-Source Current (A)
10
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
0.1 0.1
3.0V
20μs PULSE WIDTH
TJ = 25°C
A
1
10
VDS , Drain-to-Source Voltage (V)
A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

TL321中文资料

元器件交易网TL321C, TL321IOPERATIONAL AMPLIFIERSPARAMETERTEST CONDITIONS †UNITV IOInput offset voltage mVI IO Input offset current V O = 1.4 V nA I IBInput bias currentV O = 1.4 VnAV CC = 5 V to 30 VVV ICRCommon-mode input voltage rangeFull range25°C 25100501001525I OOutput currentmA25°C 25°C Full rangeFull range–20–40–25–40–20–10–20–10201020105858I CC Supply currentmATL321C, TL321IOPERATIONAL AMPLIFIERS元器件交易网元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 1998, Texas Instruments Incorporated。

SPS-3131WG中文资料

Optoway SPS-3131WG**********************************************************************************************************************************************************************************************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303Tel: 886-3-5979798 Fax: 886-3-597973712/1/2005 V2.01SPS-3131WG (RoHS Compliant)3.3V / 1310 nm / 125/155 Mbps Digital Diagnostic LC SFP SINGLE-MODE TRANSCEIVER **********************************************************************************************************************************************************************FEATURESl Hot-Pluggable SFP Footprint LC Optical Transceiver l Small Form-Factor Pluggable (SFP) MSA compatible l Compliant with SONET OC-3 IR / SDH STM-1 (S-1.1) l SFF-8472 Digital Diagnostic Function l AC/AC Coupling according to MSA l Distance up to 30 kml Single +3.3 V Power Supply l RoHS Compliantl 0 to 70o C Operating Case Temperaturel Class 1 Laser International Safety Standard IEC-60825 CompliantAPPLICATIONSl ATM Switches and Routersl SONET / SDH Switch Infrastructure l Fast Ethernet ApplicationsDESCRIPTIONThe SPS-3131WG series single mode transceivers is smallform factor pluggable module for bi-directional serial optical data communications such as SONET OC-3 / SDH STM-1 and Fast Ethernet. It is with the SFP 20-pin connector to allow hot plug capability. Digital diagnostic functions are available via an I 2C. This module is designed for single mode fiber and operates at a nominal wavelength of 1310 nm. The transmitter section uses a multiple quantum well laser and is a class 1 laser compliant according to International Safety Standard IEC-60825. The receiver section uses an integrated InGaAs detector preamplifier (IDP) mounted in an optical header and a limiting post-amplifier IC.LASER SAFETYThis single mode transceiver is a Class 1 laser product. It complies with IEC-60825 and FDA 21 CFR 1040.10 and 1040.11. The transceiver must be operated within the specified temperature and voltage limits. The optical ports of the module shall be terminated with an optical connector or with a dust plug.ORDER INFORMATIONP/No.Bit Rate (Mb/s) SONET /SDH Distance (km) Wavelength (nm) Package Temp. (o C) TX Power (dBm) RX Sens. (dBm) RoHS Compliant SPS-3131WG125 / 155IR-1/S-1.1301310LC SFP with DMI0 to 70-8 to -14-34YesAbsolute Maximum RatingsParameterSymbol Min Max Units NotesStorage TemperatureTstg -40 85 o C Operating Case Temperature Topr 0 70 o C Power Supply VoltageVcc-0.53.6VRecommended Operating ConditionsParameterSymbol Min Typ Max Units / NotesPower Supply VoltageVcc 3.1 3.3 3.5 V Operating Case Temperature Topr 0 70 o C Power Supply Current I CC (TX+RX)200 300 mA Data Rate125/155200Mb/sTransmitter Specifications (0o C < Topr < 70o C, 3.1V < Vcc < 3.5V)Parameter Symbol Min Typ Max Units NotesOpticalOptical Transmit Power Po -14 --- -8 dBm 1Output Center Wavelength λ1261 1310 1360 nmOutput Spectrum Width ∆λ--- --- 5 nm RMS (σ)Extinction Ratio E R8.2 --- --- dBOutput Eye Compliant with Bellcore TR-NWT-000253 and ITU recommendation G.957Optical Rise Time t r 2 ns 10 % to 90% Values Optical Fall Time t f 2 ns 10 % to 90% Values Relative Intensity Noise RIN -120 dB/HzElectricalData Input Current – Low I IL-350 µAData Input Current – High I IH350 µADifferential Input Voltage V IH - V IL0.5 2.4 V Peak-to-PeakTX Disable Input Voltage – Low T DIS, L0 0.5 V 2TX Disable Input Voltage – High T DIS, H 2.0 Vcc V 2TX Disable Assert Time T ASSERT10 µsTX Disable Deassert Time T DEASSERT 1 msTX Fault Output Voltage -- Low T FaultL0 0.8 V 3TX Fault Output Voltage -- High T FaultH 2.0 Vcc+0.3 V 31. Output power is power coupled into a 9/125 µm single mode fiber.2. There is an internal 4.7K to 10K ohm pull-up resistor to VccTX.3. Open collector compatible,4.7K to 10K ohm pull-up to Vcc (Host Supply Voltage).Receiver Specifications(0o C < Topr < 70o C, 3.1V < Vcc < 3.5V)Parameter Symbol Min Typ Max Units NotesOpticalSensitivity Sens -34 dBm 4Maximum Input Power Pin -8 dBm 4Signal Detect -- Asserted Pa --- -34 dBm Transition: low to high Signal Detect -- Deasserted Pd -47 --- --- dBm Transition: high to low Signal detect -- Hysteresis 1.0 --- dBWavelength of Operation 1200 --- 1600 nmElectricalDifferential Output Voltage V OH– V OL0.6 2.0 VOutput LOS Voltage -- Low V OL0 0.8 V 5Output LOS Voltage -- High V OH 2.0 Vcc+0.3 V 54. Measured at 2-1 PRBS at BER 1E-10.5. Open collector compatible, 4.7K to 10K ohm pull-up to Vcc (Host Supply Voltage).*********************************************************************************************************************************************************************** OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303***********************************************************************************************************************************************************************OPTOWAY TECHNOLOGY INC. No .38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303PINSignal NameDescriptionPINSignal Name Description1 TX GND Transmitter Ground11 RX GND Receiver Ground2 TX Fault Transmitter Fault Indication12 RX DATA OUT- Inverse Receiver Data Out 3 TX Disable Transmitter Disable (Module disables on high or open)13 RX DATA OUT+ Receiver Data Out 4 MOD-DFE2 Modulation Definition 2 – Two wires serial ID Interface14 RX GND Receiver Ground5 MOD-DEF1 Modulation Definition 1 – Two wires serial ID Interface15 Vcc RX Receiver Power – 3.3V ±5% 6 MOD-DEF0 Modulation Definition 0 – Ground in Module16 Vcc TX Transmitter Power – 3.3V ±5% 7 N/C Not Connected 17 TX GNDTransmitter Ground 8 LOS Loss of Signal 18 TX DATA IN+ Transmitter Data In9 RX GND Receiver Ground 19 TX DATA IN- Inverse Transmitter Data In 10RX GNDReceiver Ground20TX GNDTransmitter GroundModule DefinitionModule DefinitionMOD-DEF2 PIN 4 MOD-DEF1 PIN 5 MOD-DEF0 PIN 6 Interpretation by Host 4SDASCLLV-TTL LowSerial module definitionprotocolModule Definition 4 specifies a serial definition protocol. For this definition, upon power up, MOD-DEF(1:2) appear as no connector (NC) and MOD-DEF(0) is TTL LOW. When the host system detects this condition, it activates the serial protocol. The protocol uses the 2-wire serial CMOS E 2PROM protocol of the ATMEL AT24C01A/02/04 family of components.*********************************************************************************************************************************************************************** OPTOWAY TECHNOLOGY INC. No.38, Kuang Fu S. Road, Hu Kou, Hsin Chu Industrial Park, Hsin Chu, Taiwan 303。

A3131中文资料

a3131 general featuresThe a3131 is a universal DSP-based PFC solution with Switching-mode Power Supply to be used in applications requiring power factor values close to unity and highly efficient DC power supply. Typical application areas for the a3131 are high-power DC motor controllers and lighting systems. The power factor controller (PFC) is based on the boost topology and is fully software-controlled. The PFC algorithm is loaded from an on-chip non-volatile memory for stand-alone operation or can be uploaded to the DSP core using a two-wire interface.The switching-mode power supply controller (SMPSC) is based on the flyback topology with current feedback, and its role is to provide supply voltage(s) for any low-voltage electronics.Due to its immediate response,the current feedback topology makes the a3131 especially attractive for systems in which relatively high swings of the AC line voltage are expected.Highlights:PFC❑Fully reconfigurable digitally-controlled power factor controller in CMOS technology❑On-chip AC-phase-locked sinusoidal 45...65Hz oscillator to improve AC-line noise rejection❑High accuracy through on-chip 10bit ADC and dedicated RISC processor❑Achievable high efficiency (>95%) and power factor (>0.99)❑Broad range of user-selectable PWM frequency (5kHz...200kHz)❑Low EMC filter requirements due to use of spread-spectrum PWM❑Two-wire interface to load software❑Supports 90V...135V and 195V...275V 60/50Hz mains standards❑On-chip PLL with 1% RC reference oscillator to generate 64MHz clock signal Switching-Mode Power Supply Controller❑Current-mode switching power supply controller in CMOS technology❑Immediate response to low-frequency AC line swings❑Output voltage and current levels determined by external components only❑Energy-saving cycle-skipping mode for operation with low levels of output power ❑On-chip overcurrent and short-circuit protection❑On-chip reference voltage sourceAvailable Options:❑On-chip gate drivers❑On-chip OTP memory for stand-alone operation of PFCexample application schematic。

PVG612AS-TPBF;PVG612A;PVG612AS-T;PVG612ASPBF;中文规格书,Datasheet资料

The PVG612A Series Photovoltaic Relay is a sin glepole, normally open solid-state re lay that can replace electromechani cal re lays in many applications. It util izes International Rectifier’s proprietary HEXFET power MOSFET as the output switch, driven by an inte grated circuit photovoltaic gen erator of novel construction. The output switch is con trolled by radiation from a GaAlAs light emit ting diode (LED) which is optically isolated from the photovol taic generator. These units exceed the performance capabilities of electromechanical relays in operating life, sensitivity, stability of on-resistance, miniaturization, insensitivity to magnetic fields and ruggedess. The compact PVG612A is particularly suited for isolated switching of high currents from 12 to 48 Volt AC or DC power sources. Series PVG612A Relays are packaged in a 6-pin, molded DIP package with either thru-hole or surface mount (gull-wing) termi nals. It is avail able in standard plastic ship ping tubes or on tape-and-reel. Please refer to Part Identifica tion in formation opposite.

LTC3101EUF#PBF;LTC3101EUF#TRPBF;中文规格书,Datasheet资料

L, LT, LTC, LTM, Burst Mode, Linear Technology and the Linear logo are registered trademarks and Hot Swap and PowerPath are trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
Battery Powered (Note 3) USB Powered (Note 3)
440 540
mA
440 540
mA
Maximum Duty Cycle
l 100
%
2
/
3101fb
LTC3101
ELECTRICAL CHARACTERISTICS The l denotes the speciﬁcations which apply over the full operating
APPLICATIONS
n Ultra-Portable Digital Video Cameras n Personal Handheld GPS Navigators n Portable Medical Instruments
LTC3101
Wide VIN, Multi-Output DC/DC Converter and
FEATURES
n Low Loss PowerPath™ Control: Seamless, Automatic Transition from Battery to USB or Wall Adapter Power

TIP131;TIP131G;TIP132G;中文规格书,Datasheet资料

t1 t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 3. Thermal Response
50 100 200
500 1.0 k
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
BASE COLLECTOR EMITTER COLLECTOR
TIP13xG AYWW
TIP13x x A Y WW G
= Device Code = 1, 2, or 7 = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON
POWER TRANSISTORS 80−100 VOLTS, 70 WATTS
MARKING DIAGRAM
4
1 2 3
220AB CASE 221A
STYLE 1
STYLE 1: PIN 1. 2. 3. 4.
IB PD PD TJ, Tstg
300 70 2.0 – 65 to + 150
mAdc W W °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.78
°C/W
--- 2.04
STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR

TLP3061F中文资料

TOSHIBA Photocoupler GaAs Ired & Photo−TriacTLP3061F(S),TLP3062F(S),TLP3063F(S)Office MachineHousehold Use EquipmentTriac DriverSolid State RelayThe TOSHIBA TLP3061F(S),TLP3062F(S)and TLP3063F(S) consist of aphote−triac optically coupled to a gallium arsenide infrared emittingdiode in a six lead plastic DIP.All parameters are tested to the specification of TLP3061(S),TLP3062(S)and TLP3063(S).(both condition and limits)· Peak off−state voltage: 600V(min)· Trigger LED current: 15mA(max)(TLP3061F(S))10mA(max)(TLP3062F(S))5mA(max)(TLP3063F(S))· On−state current: 100mA(max)· UL recognized: UL1577,file no.E67349· Isolation voltage: 5000V rms(min)· SEMKO approved: SS EN60065SSEN60950SSEN60335· BSI approved: BS EN60065BSEN60950· Option (D4)typeVDE approved: DIN VDE0884/06.92Certificateno.68329 Maximum operating insulation voltage: 890V PKHighest permissible over voltage: 8000V PK(Note): When a VDE0884 approved type is needed,please designate the “ Option (D4) ” Pin Configuration (top view)41 : Anode2 : Cathode3 : N.C.4 : Terminal 16 : Terminal 2123Unit in mmTOSHIBA 11−7A902Weight: 0.39 g· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. · The products described in this document are subject to the foreign exchange and foreign trade laws.· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice.000707EBCRESTRICTIONS ON PRODUCT USE。

2SK3131中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」

正向电压（二极管）反向恢复时间反向恢复电荷
（注1）（注1）
打标
符
IDR
IDRP VDSF
trr Qrr
（TA = 25°C）
测试条件
— — IDR = 25 A, V GS = 0 V IDR = 50 A, V GS = 0 V dIDR / DT= 100 A/ μs
2SK3131
Min Typ. Max Unit
— — 50
A
— — 200 A
— — −1.7 V
— 105 —
ns
— 380 — nC
东芝
2SK3131
JAPAN
部件号（或缩写代码）批号
注4
注4：下一个批号的行识别产品的说明标签. Not underlined: [[Pb]]/INCLUDES >没有下划线：[铅] /包括MCV 下划线：[[G] /符合RoHS标准或[[G] / RoHS指令[铅]
2
2010-01-29
芯片中文手册,看全文,戳
2SK3131
3
2010-01-29
芯片中文手册,看全文,戳
2SK3131
4
2010-01-29
芯片中文手册,看全文,戳
2SK3131
RG = 25 Ω VDD = 90 V, L = 357 μH
VDS = 10 V, V GS = 0 V,F = 1兆赫
tr
开启时间
ton
切换时间
下降时间
tf
关断时间
总栅极电荷（栅源加栅极漏）栅源充
栅漏（“米勒”）收费
toff
Qg
Qgs
VDD ≈ 400 V, V GS = 10 V, I D = 50 A

Model 3131A 分辨率自动校正电阻测量仪说明说明书

• Multimeters• Voltage Testers• Clamp Meters• Loggers• Insulation Testers• Earth Testers• LOOP/PSC Testers• RCD Testers• Multi Function Testers• Combi Tester• Portable ApplianceTesters• Power Meters• Sensors, Accessories• Others• Test Leads• Discontinued ProductsAnalogue Insulation / Continuity Tester 3131A Selection Guide Product Catalogue The Model 3131A offers unmatched performance, and feature including test lead resistance zero adjustment for time-saving continuous operation, a clear ease to read illuminated scale, and a live circuit warning.•Test insulation up to 100M Ω at 250V, 200M Ω at 500V, 400M Ω at 1000V and continuity up to 20Ω.•LIVE circuit warning lamp plus audible warning.•Automatic discharge of circuit capacitance when TEST button is released.•Fuse protected (continuity range only).•Battery check LED.•Front panel zero adjust.•Back light function to facilitate working at dimly lit situations.•PRESS TO TEST button with lockdown feature. Insulation ResistanceTest Voltage250V/500V/1000V Measuring Ranges(Mid-scale Value)100M Ω/200M Ω/400M Ω (1M Ω) (2M Ω) (4M Ω)Output Voltageon open circuitRated test voltage+20%, -0%Nominal Current1mA DC min.Output ShortCircuit Current1.3 mA DC approx.Accuracy0.1~10M Ω/0.2~20M Ω/0.4~40M Ω (Accuracy Guaranteed Ranges) ±5% of indicated value ContinuityMeasuring Ranges(Mid-scale Value)2Ω/20Ω (1Ω) (10Ω)Output Voltageon open circuit 4~9V DCMeasuring Current 200mA DC min.Accuracy |±3% of scale lengthGeneral Safety Standard IEC 61010-1 CAT.III 300V Pollution Degree 2IEC 61010-2-031IEC 61557-1/2/4IP Rating IEC 60529-IP54EMC Standard IEC 61326-1Withstand Voltage 3700V AC for 1 minutePower Source R6P (AA) (1.5V) × 6Dimensions 185(L) × 167(W) × 89(D)mmWeight 860g approx.Accessories7122 (Test leads) Pouch for test leads8923 (F500mA/600V fuse) × 2R6P (AA) × 6Shoulder StrapInstruction Manual Copyright(c)2004 KYORITSU ELECTRICAL INSTRUMENTS WORKS, LTD.Sitemap | Contact Us | Terms of Use | Privacy Policy Página 1 de 13131A KYORITSU 12/11/2009http://www.kew-ltd.co.jp/en/products/insulation/3131A.html。

IRMCK311TR;中文规格书,Datasheet资料

Data Sheet No. PD60338IRMCK311 Dual Channel Sensorless Motor Control IC forAppliancesFeaturesMCE TM (Motion Control Engine) - Hardware based computation engine for high efficiency sinusoidal sensorless control of permanent magnet AC motor Integrated Power Factor Correction controlSupports both interior and surface permanent magnet motorsBuilt-in hardware peripheral for single shunt current feedback reconstructionNo external current or voltage sensing operational amplifier requiredDual channel three/two-phase Space Vector PWM Three-channel analog output (PWM)Embedded 8-bit high speed microcontroller (8051) for flexible I/O and man-machine controlJTAG programming port for emulation/debugger Two serial communication interface (UART)I2C/SPI serial interfaceWatchdog timer with independent analog clockThree general purpose timers/countersTwo special timers: periodic timer, capture timer Internal ‘One-Time Programmable’ (OTP) memory and internal RAM for final production usagePin compatible with IRMCF311 RAM version1.8V/3.3V CMOS Product SummaryMaximum crystal frequency 60 MHz Maximum internal clock (SYSCLK) frequency 128 MHz Maximum 8051 clock frequency 33 MHz Sensorless control computation time 11 μsec typ MCE TM computation data range 16 bit signed 8051 OTP Program memory 56K bytes MCE program and Data RAM 8K bytes GateKill latency (digital filtered) 2 μsec PWM carrier frequency counter 16 bits/ SYSCLK A/D input channels 6 A/D converter resolution 12 bits A/D converter conversion speed 2 μsec 8051 instruction execution speed 2 SYSCLK Analog output (PWM) resolution 8 bits UART baud rate (typ) 57.6K bps Number of I/O (max) 14 Package (lead-free) QFP64 Operating temperature -40°C ~ 85°CDescriptionIRMCK311 is a high performance OTP based motion control IC designed primarily for appliance applications. IRMCK311 is designed to achieve low cost and high performance control solutions for advanced inverterized appliance motor control. IRMCK311 contains two computation engines. One is Motion Control Engine (MCE TM) for sensorless control of permanent magnet motors; the other is an 8-bit high-speed microcontroller (8051). Both computation engines are integrated into one monolithic chip. The MCE TM contains a collection of control elements such as Proportional plus Integral, Vector rotator, Angle estimator, Multiply/Divide, Low loss SVPWM, Single Shunt IFB. The user can program a motion control algorithm by connecting these control elements using a graphic compiler. Key components of the sensorless control algorithms, such as the Angle Estimator, are provided as complete pre-defined control blocks implemented in hardware. A unique analog/digital circuit and algorithm to fully support single shunt current reconstruction is also provided. The 8051 microcontroller performs 2-cycle instruction execution (16MIPS at 33MHz). The MCE and 8051 microcontroller are connected via dual port RAM to process signal monitoring and command input. An advanced graphic compiler for the MCE TM is seamlessly integrated into the MATLAB/Simulink environment, while third party JTAG based emulator tools are supported for 8051 developments. IRMCK311 comes with a small QFP64 pin lead-free package.TABLE OF CONTENTS1 Overview (5)2 IRMCK311 Block Diagram and Main Functions (6)3 Pinout (8)4 Input/Output of IRMCK311 (9)4.1 8051 Peripheral Interface Group (10)4.2 Motion Peripheral Interface Group (10)4.3 Analog Interface Group (11)4.4 Power Interface Group (11)4.5 Test Interface (12)5 Application Connections (13)6 DC Characteristics (14)6.1 Absolute Maximum Ratings (14)6.2 System Clock Frequency and Power Consumption (14)6.3 Digital I/O DC Characteristics (15)6.4 PLL and Oscillator DC Characteristics (15)6.5 Analog I/O DC Characteristics (16)6.6 Under Voltage Lockout DC Characteristics (17)6.7 AREF Characteristics (17)7 AC Characteristics (18)7.1 PLL AC Characteristics (18)7.2 Analog to Digital Converter AC Characteristics (19)7.3 Op Amp AC Characteristics (19)7.4 SYNC to SVPWM and A/D Conversion AC Timing (20)7.5 GATEKILL to SVPWM AC Timing (21)7.6 Interrupt AC Timing (21)7.7 I2C AC Timing (22)7.8 SPI AC Timing (23)7.8.1 SPI Write AC timing (23)7.8.2 SPI Read AC Timing (24)7.9 UART AC Timing (25)7.10 CAPTURE Input AC Timing (26)7.11 JTAG AC Timing (27)7.12 OTP Programming Timing (28)8 I/O Structure (29)9 Pin List (32)Dimensions (35)10 Package11 Part Marking Information (36)Information (36)12 OrderingTABLE OF FIGURESFigure 1. Typical Application Block Diagram Using IRMCK311 (5)Figure 2. IRMCK311 Internal Block Diagram (6)Figure 3. IRMCK311 Pin Configuration (8)Figure 4. Input/Output of IRMCK311 (9)Figure 5. Application Connection of IRMCK311 (13)Figure 6. Clock Frequency vs. Power Consumption (14)Figure 7 Crystal oscillator circuit (18)Figure 8 Voltage droop of sample and hold (19)Figure 9 SYNC to SVPWM and A/D conversion AC Timing (20)Figure 10 GATEKILL to SVPWM AC Timing (21)Figure 11 Interrupt AC Timing (21)Figure 12 I2C AC Timing (22)Figure 13 SPI AC Timing (23)Figure 14 SPI Read AC Timing (24)Figure 15 UART AC Timing (25)Figure 16 CAPTURE Input AC Timing (26)Figure 17 JTAG AC Timing (27)Figure 18 OTP Programming Timing (28)Figure 19 All digital I/O except motor PWM output (29)Figure 20 RESET, GATEKILL I/O (29)Figure 21 Analog input (30)Figure 22 Analog operational amplifier output and AREF I/O structure (30)Figure 23 VPP programming pin I/O structure (30)Figure 24 VSS and AVSS pin structure (31)Figure 25 VDD1 and VDDCAP pin structure (31)Figure 26 XTAL0/XTAL1 pins structure (31)TABLE OF TABLESTable 1. Absolute Maximum Ratings (14)Table 2. System Clock Frequency (14)Table 3. Digital I/O DC Characteristics (15)Table 4. PLL DC Characteristics (15)Table 5. Analog I/O DC Characteristics (16)Table 6. UVcc DC Characteristics (17)Table 7. AREF DC Characteristics (17)Table 8. PLL AC Characteristics (18)Table 9. A/D Converter AC Characteristics (19)Table 10. Current Sensing OP Amp AC Characteristics (19)Table 11. SYNC AC Characteristics (20)Table 12. GATEKILL to SVPWM AC Timing (21)Table 13. Interrupt AC Timing (21)Table 14. I2C AC Timing (22)Table 15. SPI Write AC Timing (23)Table 16. SPI Read AC Timing (24)Table 17. UART AC Timing (25)Table 18. CAPTURE AC Timing (26)Table 19. JTAG AC Timing (27)Table 20. OTP Programming Timing (28)Table 21. Pin List (32)1 OverviewIRMCK311 is a new International Rectifier integrated circuit device primarily designed as a one-chip solution for complete inverter controlled appliance dual motor control applications. Unlike a traditional microcontroller or DSP, the IRMCK311 provides a built-in closed loop sensorless control algorithm using the unique Motion Control Engine (MCE TM) for permanent magnet motors. The MCE TM consists of a collection of control elements, motion peripherals, a dedicated motion control sequencer and dual port RAM to map internal signal nodes. IRMCK311 also employs a unique single shunt current reconstruction circuit to eliminate additional analog/digital circuitry and enables a direct shunt resistor interface to the IC. The sensorless control is the same for both motors with a single shunt current sensing capability. Motion control programming is achieved using a dedicated graphical compiler integrated into the MATLAB/Simulink TM development environment. Sequencing, user interface, host communication, and upper layer control tasks can be implemented in the 8051 high-speed 8-bit microcontroller. The 8051 microcontroller is equipped with a JTAG port to facilitate emulation and debugging tools. Figure 1 shows a typical application schematic using IRMCK311.IRMCK311 is intended for volume production purpose and contains 64K bytes of OTP (One Time Programming) ROM, which can be programmed through a JTAG port. For a development purpose use, IRMCF311 contains a 48k byte of RAM in place of program OTP to facilitate an application development work. Both IRMCF311 and IRMCK311 come in the same 64-pin QFP package with identical pin configuration to facilitate PC board layout and transition to mass productionFigure 1. Typical Application Block Diagram Using IRMCK3112 IRMCK311 Block Diagram and Main FunctionsM o t i o n C o n t r o l B u sFigure 2. IRMCK311 Internal Block DiagramIRMCK311 contains the following functions for sensorless AC motor control applications:• Motion Control Engine (MCE TM )o Proportional plus Integral block o Low pass filtero Differentiator and lag (high pass filter) o Ramp o Limito Angle estimate (sensorless control) o Inverse Clark transformation o Vector rotator o Bit latch o Peak detect o Transitiono Multiply-divide (signed and unsigned)o Divide (signed and unsigned)o Addero Subtractoro Comparatoro Countero Accumulatoro Switcho Shifto ATAN (arc tangent)o Function block (any curve fitting, nonlinear function)o16-bit wide Logic operations (AND, OR, XOR, NOT, NEGATE)o MCE TM program and data memory (6K byte). Note 1o MCE TM control sequencer• 8051 microcontrollero Three 16-bit timer/counterso16-bit periodic timero16-bit analog watchdog timero16-bit capture timero Up to 36 discrete I/Oso Eleven-channel 12-bit A/DFive buffered channels (0 – 1.2V input)One unbuffered channel (0 – 1.2V input)o JTAG port (4 pins)o Up to three channels of analog output (8-bit PWM)o Two UARTo I2C/SPI porto 64K byte Note 1program One-Time Programmable memoryo2K byte data RAM. Note 2Note 1: Total size of OTP memory is 64K byte, however MCE program occupiesmaximum 8K byte which will be loaded into internal RAM at a powerup/bootprocess. Therefore only 56K byte OTP memory area is usable for 8051microcontroller.Note 2: Total size of RAM is 8K byte including MCE program, MCE data, and 8051data. Different sizes can be allocated depending on applications.3 PinoutXTAL0XTAL1P1.1/RXD P1.2/TXDVDD1VSS VDD2P1.3/SYNC/SCKP1.4/CAPP 3.6/R X D 1P 3.7/T X D 1FPWMVL FPWMUL V S SV D D 2A V D DA V S SA I N 0A R E FP 2.7/A O P W M 1P 2.6/A O P W M 0CPWMUH CPWMVH CPWMWH CPWMUL CPWMVL CPWMWL CGATEKILL VDD1VSS I F B C OI F B C +I F B C -P L L V S SP L L V D DR E S E TN CT C KP 5.3/T D IP 5.2/T D OP 5.1/T M SS D A /C S 0S C L /S O -S I /V P PP 5.0/P F C G K I L LP F C P W M V S SFGATEKILL FPWMWL VAC-VAC+VACO IPFCO IPFC+IPFC-I F B F OI F B F +I F B F -P3.0/INT2/CS1C M E X TFPWMVH FPWMUHFPWMWH A I N 1P 3.2/I N T 0Figure 3. IRMCK311 Pin Configuration4 Input/Output of IRMCK311All I/O signals of IRMCK311 are shown in Figure 4. All I/O pins are 3.3V logic interface except A/D interface pins.Figure 4. Input/Output of IRMCK3114.1 8051 Peripheral Interface GroupUART InterfaceP1.1/RXD Input, Receive data to IRMCK311, can be configured as P1.1P1.2/TXD Output, Transmit data from IRMCK311, can be configured as P1.22nd channel Receive data to IRMCK311, can be configured as P3.6 P3.6/RXD1 Input,P3.7/TXD1 Output,2nd channel Transmit data from IRMCK311, can be configured as P3.7Discrete I/O InterfaceP1.3/SYNC/SCK Input/output port 1.3, can be configured as SYNC output or SPI clock P1.4/CAP Input/output port 1.4, can be configured as Capture Timer inputP3.0/INT2/CS1 Input/output port 3.0, can be configured as external interrupt 2 or SPIchip select 1P3.2/INT0 Input/output port 3.2, can be configured as external interrupt 0Analog Output InterfaceP2.6/AOPWM0 Input/output, can be configured as 8-bit PWM output 0 withprogrammable carrier frequencyP2.7/AOPWM1 Input/output, can be configured as 8-bit PWM output 1 withprogrammable carrier frequencyCrystal InterfaceXTAL0 Input, connected to crystalXTAL1 Output, connected to crystalReset InterfaceRESET Inout, system reset, needs to be pulled up to VDD1 but doesn’t requireexternal RC time constantI2C/SPI InterfaceSCL/SO-SI/VPP Output, I2C clock output, SPI SO-SII2C Data line, Chip Select 0 of SPISDA/CS0 Input/output,P3.0/INT2/CS1 Input/output port 3.0, can be configured as external interrupt 2 or SPIchip select 1P1.3/SYNC/SCK Input/output port 1.3, can be configured as SYNC output or SPI clock 4.2 Motion Peripheral Interface GroupPWMCPWMUH Output, motor 1 PWM phase U high side gate signalCPWMUL Output, motor 1 PWM phase U low side gate signalCPWMVH Output, motor 1 PWM phase V high side gate signalCPWMVL Output, motor 1 PWM phase V low side gate signalCPWMWH Output, motor 1 PWM phase W high side gate signalCPWMWL Output, motor 1 PWM phase W low side gate signalFPWMUH Output, motor 2 PWM phase U high side gate signalFPWMUL Output, motor 2 PWM phase U low side gate signal分销商库存信息: IRIRMCK311TR。

AP4313中文规格书,AP4313KTR-G1中文datasheet翻译

R4 R3
C1
+
C3
R5 R1
Rss
VOUT
= VREF
× R1+ R2 R1
− (IL × RSS )
(V)
( ) 限流电流 = VSENSE ×VREF
VSENSE + VREF × RSS
(A)
图 12. AP4313的典型应用3
VOUT+ IL Load
VOUT-
2010年5月版本2. 0
CC
200
V =2.5V
CC
199
198
197
196
195
-40
-20
0
20
40
60
80
100
120
环境温度(oC)
图 5. VSENSE – 环境温度关系图
80
V =12V
60
CC
V =5V
CC
V =2.5V CC
40
20
0
-20
-40
-40
-20
0
20
40
60
80
100
120
环境温度(oC)
图 6. VCTRL 引脚的输入偏置电流 – 环境温度关系图
BCD 新进半导体制造有限公司 10
恒压恒流控制器物理尺寸
SOT-23-6
Data Sheet AP4313
单位: 毫米(英寸)
2.820(0.111) 3.020(0.119) 0.300(0.012) 0.400(0.016)
6
5
4
0.300(0.012) 0.600(0.024)
0° 8°

TLP2345_datasheet

6. Principle of Operation 6.1. Truth Table
Input H L LED ON OFF Output H L
6.2. Mechanical Parameters
Characteristics Creepage distances Clearance distances Internal isolation thickness Min 5.0 5.0 0.4 Unit mm
4. Packaging and Pin Configuration
1: Anode 3: Cathode 4: GND 5: VO (Output) 6: Hale Waihona Puke CC11-4L1S1
2013-12-04 Rev.1.0
TLP2345
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
Note:
9. Electrical Characteristics (Note) (Unless otherwise specified, Ta = -40 to 110 , VCC = 4.5 to 30 V)
Characteristics Input forward voltage Input forward voltage temperature coefficient Input reverse current Input capacitance Low-level output voltage High-level output voltage Low-level supply current High-level supply current Low-level short-circuit output current High-level short-circuit output current Symbol VF ∆VF/∆Ta IR Ct VOL VOH ICCL ICCH IOSL IOSH Test Circuit Fig. 12.1.1 Fig. 12.1.2 Fig. 12.1.3 Fig. 12.1.4 Fig. 12.1.5 Fig. 12.1.6 Test Condition IF = 3 mA, Ta = 25 IF = 3 mA VR = 5 V, Ta = 25 V = 0 V, f = 1 MHz, Ta = 25 VF = 0.8 V, IO = 3.5 mA VF = 0.8 V, IO = 6.5 mA IF = 3 mA, IO = -3.5 mA IF = 3 mA, IO = -6.5 mA VCC = 5.5 V VCC = 30 V IF = 3 mA, VCC = 5.5 V IF = 3 mA, VCC = 30 V VCC = VO = 5.5 V VCC = VO = 20 V IF = 3 mA, VCC = 5.5 V, VO = GND IF = 3 mA, VCC = 20 V, VO = GND Threshold input current (L/H) Input current hysteresis Threshold input voltage (H/L) IFLH IHYS VFHL IO = -3.5 mA, VO > 4.8 V, VCC = 5 V IO = -3.5 mA IO = 6.5 mA, VO < 0.4 V Min 1.35 VCC - 0.2 VCC - 0.4 150 160 0.8 Typ. 1.55 -2.0 20 0.026 0.047 VCC - 0.03 VCC - 0.05 2.1 2.4 2.1 2.4 270 300 -330 -350 0.35 0.1 Max 1.65 10 0.2 0.4 3 3 3 3 -150 -160 1.6 V mA Unit V mV/ µA pF V

PIP3121-A资料

Philips Semiconductors Product specificationLogic level TOPFET PIP3121-ADESCRIPTIONQUICK REFERENCE DATAMonolithic logic level protected SYMBOL PARAMETERMAX.UNIT power MOSFET using TOPFET2technology assembled in a 5 pin V DS Continuous drain source voltage 50V surface mounting plastic package.I D Continuous drain current 40A P tot Total power dissipation107W APPLICATIONST jContinuous junction temperature 150˚C R DS(ON)Drain-source on-state resistance 20m Ωlamps SYMBOL PARAMETERNOM.UNIT motors solenoids V PSProtection supply voltage5VheatersFEATURESTrenchMOS output stage with Separate input pin for higher 5 V logic compatible input Separate supply pin for logic Overtemperature protection Drain current limitingShort circuit load protectionLatched overload trip state reset Diagnostic flag pin indicates overtemperature condition,overload tripped state, or open circuit load ESD protection on all pins Overvoltage clampingPINNING - SOT263B-01PIN CONFIGURATIONSYMBOLPhilips Semiconductors Product specification Logic level TOPFET PIP3121-ALIMITING VALUESLimiting values in accordance with the Absolute Maximum Rating System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT Continuous voltageVDS Drain source voltage1VIS= 0 V-50V Continuous currentsI D Drain current VPS= 5 V; Tmb=25˚C-self -AlimitedVPS= 0 V; Tmb=80˚C-40AI I Input current-55mAI F Flag current-55mAIPProtection supply current-55mAThermalPtot Total power dissipation Tmb= 25˚C-107WT stg Storage temperature-55175˚CT j Junction temperature2continuous-150˚CTsoldMounting base temperature during soldering-260˚C ESD LIMITING VALUESYMBOL PARAMETER CONDITIONS MIN.MAX.UNITVCElectrostatic discharge capacitor Human body model;-2kVvoltage C = 250 pF; R = 1.5 kΩOVERLOAD PROTECTION LIMITING VALUEWith an adequate protection supply For overload conditions an n-MOS The drain current is limited to connected, TOPFET can protect transistor turns on between the reduce dissipation in case of short itself from two types of overload -input and source to quickly circuit load. Refer to OVERLOAD overtemperature and short circuit discharge the power MOSFET CHARACTERISTICS.load.gate capacitance.SYMBOL PARAMETER REQUIRED CONDITION MIN.MAX.UNIT Overload protection3protection supplyVDS Drain source voltage VPS≥ 4 V035VOVERVOLTAGE CLAMPING LIMITING VALUESAt a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. SYMBOL PARAMETER CONDITIONS MIN.MAX.UNITInductive load turn off IDM = 25 A; VDD≤ 20 VEDSM Non-repetitive clamping energy Tmb= 25˚C-550mJEDRM Repetitive clamping energy Tmb≤ 95˚C; f = 250 Hz-60mJ1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO)the over temperature trip operates to protect the switch.3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previouslylatched, it would be reset by this condition.Philips Semiconductors Product specification Logic level TOPFET PIP3121-ATHERMAL CHARACTERISTICSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Thermal resistanceRth j-mbJunction to mounting base--0.94 1.17K/W OUTPUT CHARACTERISTICSLimits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Off-state VIS= 0 VV(CL)DSS Drain-source clamping voltage ID= 10 mA50-70VIDM= 5 A; tp ≤ 300 µs; δ≤ 0.01506070VI DSS Drain source leakage current1VPS= 0 V; VDS= 40 V--100µATmb= 25˚C-0.110µAOn-state tp≤ 300 µs; δ≤ 0.01; VPS≥ 4 VRDS(ON)Drain-source resistance IDM= 15 A; VIS≥ 4.4 V--40mΩTmb= 25˚C-1520mΩINPUT CHARACTERISTICSLimits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb= 25˚C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Normal operationVIS(TO)Input threshold voltage2ID= 1 mA0.6- 2.6VTmb= 25˚C 1.1 1.6 2.1VI IS Input current VIS= 5 V-16100µAV(CL)IS Input clamping voltage II= 1 mA 5.5 6.48.5VRIGInternal series resistance3to gate of power MOSFET- 1.7-kΩOverload protection latched VPS≥ 4 VI ISL Input current VIS= 5 V1 2.74mA1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-statequiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.2 The measurement method is simplified if VPS = 0 V, in order to distinguish IDfrom IDSP. Refer to OPEN CIRCUIT LOAD DETECTIONCHARACTERISTICS.3 This is not a directly measurable parameter.Philips Semiconductors Product specificationLogic level TOPFET PIP3121-APROTECTION SUPPLY CHARACTERISTICSLimits are for -40˚C ≤ T mb ≤ 150˚C; typicals are for T mb = 25˚C.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT Protection & detection V PSF Threshold voltage 1I F = 100 µA; V DS = 5 V 2.53.454VNormal operation or protection latched I PS , I PSL Supply current V PS = 4.5 V -210450µA V (CL)PS Clamping voltageI P = 1.5 mA5.56.58.5V Overload protection latched V PSR Reset voltage 1 1.83V t prReset timeV PS ≤ 1 V1045120µsOPEN CIRCUIT LOAD DETECTION CHARACTERISTICSAn open circuit load condition can be detected while the TOPFET is in the off-state. Refer to TRUTH TABLE .V PS = 5 V. Limits are for -40˚C ≤ T mb ≤ 150˚C and typicals are for T mb = 25˚C.SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNIT I DSP Off-state drain current 2V IS = 0 V; 2 V ≤ V DS ≤ 40 V 0.9 1.8 2.7mA V DSF Drain threshold voltage 3V IS = 0 V 0.212V V ISFInput threshold voltage 4I D = 100 µA0.30.81.1VOVERLOAD CHARACTERISTICST mb = 25˚C unless otherwise specified.SYMBOL PARAMETERCONDITIONS MIN.TYP.MAX.UNITShort circuit load protection V PS > 4 VI DDrain current limitingV IS = 5 V;-40˚C ≤ T mb ≤ 150˚C 406284A P D(TO)Overload power threshold for protection to operate 90220330W T DSC Characteristic timewhich determines trip time 5250500700µs Overtemperature protection V PS = 5 VT j(TO)Threshold temperaturefrom I D ≥ 4 A or V DS > 0.2 V150170-˚C1 When V PS is less than V PSF the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.2 The drain source current which flows in a normal load when the protection supply is high and the input is low.3 If V DS < V DSF then the flag indicates open circuit load.4 For open circuit load detection, V IS must be less than V ISF .5 Trip time t d sc varies with overload dissipation P D according to the formula t d sc ~ T DSC / ln[ P D / P D(TO)].Philips Semiconductors Product specificationLogic level TOPFET PIP3121-ATRUTH TABLEFor normal, open-circuit load and overload conditions or inadequate protection supply voltage.Assumes proper external pull-up for flag pin. Refer to FLAG CHARACTERISTICS .CONDITIONPROTECTIONINPUT FLAG OUTPUT Normal on-state 110ON Normal off-state 100OFF Open circuit load 110ON Open circuit load 101OFF Short circuit load 1111OFF Over temperature1X 1OFF Low protection supply voltage 011ON Low protection supply voltage1OFFKEY ‘0’ equals low‘1’ equals high‘X ’ equals don ’t care.FLAG CHARACTERISTICSThe flag is an open drain transistor which requires an external pull-up circuit.Limits are for -40˚C ≤ T mb ≤ 150˚C; typicals are for T mb = 25˚C.SYMBOL PARAMETER CONDITIONSMIN.TYP.MAX.UNITFlag ‘low’normal operation; V PS = 5 V V FSF Flag voltageI F = 100 µA -0.81V I FSF Flag saturation current V FS = 5 V -10-mAFlag ‘high’overload or fault I FSO Flag leakage current V FS = 5 V -0.110µA V (CL)FS Flag clamping voltage I F = 100 µA5.56.28.5VApplication information R FSuitable external pull-up V FF = 5 V-47-k ΩresistanceSWITCHING CHARACTERISTICST mb = 25˚C; R I = 50 Ω; R IS = 50 Ω; V DD = 15 V; resistive load R L = 10 Ω.SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT t d on Turn-on delay time V IS : 0 V ⇒ 5 V- 1.85µs t r Rise time- 3.58µs t d off Turn-off delay time V IS : 5 V ⇒ 0 V -1130µs t fFall time-512µs1 In this condition the protection circuit is latched. To reset the latch the protection pin must be taken low. Refer to PROTECTION SUPPLYCHARACTERISTICS.Philips Semiconductors Product specification Logic level TOPFET PIP3121-AMECHANICAL DATA1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass:2 gPhilips Semiconductors Product specification Logic level TOPFET PIP3121-ADEFINITIONSDATA SHEET STATUSDATA SHEET PRODUCT DEFINITIONSSTATUS1STATUS2Objective data Development This data sheet contains data from the objective specification forproduct development. Philips Semiconductors reserves the right tochange the specification in any manner without noticePreliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproductProduct data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time inorder to improve the design, manufacturing and supply. Changes willbe communicated according to the Customer Product/ProcessChange Notification (CPCN) procedure SNW-SQ-650ALimiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.Philips Electronics N.V. 2002All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.1 Please consult the most recently issued datasheet before initiating or completing a design.2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information isavailable on the Internet at URL .。

Philips 电视 4131 系列用户手册说明书

Register your product and get support at4131 series /welcome用户手册32PFT413132PHT413143PFT4131内容1 电视导览 31.1 Pause TV 和录制31.2 EasyLink32 设置 42.1 阅读安全说明42.2 电视支架和壁挂式安装42.3 摆放提示42.4 电源线42.5 天线43 连接设备 63.1 关于连接63.2 带智能卡的 CAM - CI+73.3 接收器 - 机顶盒83.4 家庭影院系统 - HTS83.5 蓝光光盘播放机103.6 DVD 播放机103.7 耳机103.8 游戏机103.9 USB 硬盘113.10 USB 闪存盘123.11 相机123.12 摄像机 - HDMI123.13 电脑124 打开和关闭 144.1 开机或待机144.2 定时关机144.3 关闭定时器145 遥控器 155.1 键概述155.2 红外传感器（适用于 4031/5231 系列电视）15 5.3 红外传感器（适用于 4131 系列电视）165.4 电池165.5 清洁166 频道 176.1 切换频道176.2 频道列表176.3 频道选项186.4 文本/图文电视197 电视指南 217.1 您需要执行的操作217.2 使用电视指南218 录制和 Pause TV 238.1 录制238.2 暂停电视239 主菜单 259.1 关于主菜单259.2 打开主菜单2510 来源 2610.1 切换设备2610.2 电视输入的选项2610.3 游戏或电脑2611 视频、照片和音乐 27 11.1 来自 USB 连接2711.2 播放视频2711.3 查看照片2711.4 播放音乐2812 设置 2912.1 快捷设置2912.2 图片2912.3 声音3112.4 环保设置3412.5 一般设置3412.6 儿童锁3712.7 通用接入3713 频道安装 3913.1 天线/有线安装3913.2 频道列表复制4114 软件 4314.1 软件版本4314.2 本地更新4314.3 开源软件4314.4 开源许可证4315 规格 4515.1 环境4515.2 功率4515.3 接收4515.4 显示屏类型4615.5 显示屏输入分辨率4615.6 尺寸和重量4615.7 连接4615.8 声音4715.9 多媒体4716 帮助与支持 4816.1 注册电视4816.2 使用帮助4816.3 故障检修4816.4 在线帮助4916.5 客户服务/维修4917 安全与保养 5017.1 安全5017.2 屏幕保养5118 使用条款、版权和授权 52 18.1 使用条款5218.2 版权和许可52索引 541电视导览1.1Pause TV 和录制如果您连接了 USB硬盘，则可以暂停和录制数字电视频道的广播。

LV8731V-TLM-H;中文规格书,Datasheet资料

Bi-CMOS LSIPWM Constant-Current Control Stepping Motor DriverLV8731VOverviewThe LV8731V is a 2-channel H-bridge driver IC that can switch a stepping motor driver, which is capable of micro-step drive and supports 4W 1-2 phase excitation, and two channels of a brushed motor driver, which supports forward, reverse, brake, and standby of a motor. It is ideally suited for driving brushed DC motors and stepping motors used in office equipment and amusement applications.Features• Single-channel PWM current control stepping motor driver (selectable with DC motor driver channel 2) incorporated. • BiCDMOS process IC• Low on resistance (upper side : 0.3Ω ; lower side : 0.25Ω ; total of upper and lower : 0.55Ω ; Ta = 25°C, I O = 2A) • Excitation mode can be set to 2-phase, 1-2 phase, W1-2 phase , or 4W1-2 phase • Excitation step proceeds only by step signal input • Motor current selectable in four steps• Output short-circuit protection circuit (selectable from latch-type or auto-reset-type) incorporated • Unusual condition warning output pins • No control power supply requiredSpecificationsAbsolute Maximum Ratings at Ta = 25°CParameter SymbolConditionsRatings UnitSupply voltage VM max 36V Output peak current I O peak tw ≤ 10ms, duty 20% 2.5 A Output current I O max 2A Logic input voltage V IN-0.3 to +6V MONI/EMO input voltageVmoni/Vemo-0.3 to +6VContinued on next page.Parameter SymbolConditionsRatings UnitAllowable power dissipation Pd max Ta ≤ 85°C * 3.25W Operating temperature Topr -20 to +85°C Storage temperatureTstg-55 to +150°C* Specified circuit board : 90.0mm ×90.0mm ×1.6mm, glass epoxy 2-layer board, with backside mounting.Allowable Operating Ratings at Ta = 25°CParameter SymbolConditionsRatings UnitSupply voltage range VM 9 to 32V Logic input voltage V IN 0 to 5.5V VREF input voltage rangeVREF0 to 3VElectrical Characteristics at Ta = 25°C, VM = 24V, VREF = 1.5VRatingsParameter SymbolConditionsmin typ maxUnitStandby mode current drain IMst ST = “L”100 400μA Current drainIM ST = “H”, OE = “L”, with no load 3.2 5mA VREG5 output voltage Vreg5 I O = -1mA 4.5 5 5.5V Thermal shutdown temperature TSDDesign guarantee150180200°C Thermal hysteresis width ΔTSD Design guarantee 40°CMotor driver Ronu I O = 2A, Upper-side on resistance 0.3 0.4Ω Output on resistanceRond I O = 2A, Lower-side on resistance0.250.33Ω Output leakage current I O leak 50μA Diode forward voltage VDID = -2A1.2 1.4V I IN L V IN = 0.8V 48 12μA Logic pin input currentI IN H V IN = 5V305070μALogic high-level input voltage V IN H 2.0V Logic low-level input voltage V IN L 0.8V Vtdac0_4WStep 0 (When initialized : channel 1 comparator level) 0.2910.3 0.309VVtdac1_4W Step 1 (Initial state+1) 0.2910.3 0.309V Vtdac2_4W Step 2 (Initial state+2) 0.2850.294 0.303V Vtdac3_4W Step 3 (Initial state+3) 0.2790.288 0.297V Vtdac4_4W Step 4 (Initial state+4) 0.2670.276 0.285V Vtdac5_4W Step 5 (Initial state+5) 0.2550.264 0.273V Vtdac6_4W Step 6 (Initial state+6) 0.2400.249 0.258V Vtdac7_4W Step 7 (Initial state+7) 0.2220.231 0.240V Vtdac8_4W Step 8 (Initial state+8) 0.2010.21 0.219V Vtdac9_4WStep 9 (Initial state+9)0.1800.189 0.198V Vtdac10_4W Step 10 (Initial state+10) 0.1570.165 0.173V Vtdac11_4W Step 11 (Initial state+11) 0.1340.141 0.148V Vtdac12_4W Step 12 (Initial state+12) 0.1070.114 0.121V Vtdac13_4W Step 13 (Initial state+13) 0.0800.087 0.094V Vtdac14_4W Step 14 (Initial state+14) 0.0530.06 0.067V 4W1-2-phase driveVtdac15_4W Step 15 (Initial state+15)0.0230.030.037V Vtdac0_WStep 0 (When initialized : channel 1 comparator level) 0.2910.3 0.309V Vtdac4_W Step 4 (Initial state+1) 0.2670.276 0.285V Vtdac8_W Step 8 (Initial state+2)0.2010.21 0.219V W1-2-phase driveVtdac12_W Step 12 (Initial state+3)0.1070.1140.121V Vtdac0_H Step 0 (When initialized : channel 1 comparator level) 0.2910.3 0.309V 1-2 phase driveVtdac8_HStep 8 (Initial state+1)0.2010.210.219V Current setting comparator threshold voltage (current step switching)2 phase driveVtdac8_FStep 8' (When initialized : channel 1 comparator level)0.2910.3 0.309VContinued on next page.RatingsParameter SymbolConditionsmin typ max UnitVtatt00 ATT1 = L, ATT2 = L 0.2910.3 0.309V Vtatt01 ATT1 = H, ATT2 = L 0.2320.24 0.248V Vtatt10 ATT1 = L, ATT2 = H 0.1430.15 0.157V Current setting comparator threshold voltage(current attenuation rate switching)Vtatt11ATT1 = H, ATT2 = H 0.0530.06 0.067V Chopping frequencyFchop Cchop = 200pF 4050 60kHz CHOP pin charge/discharge current Ichop71013μAChopping oscillation circuit threshold voltage Vtup 0.81 1.2VVREF pin input current Iref VREF = 1.5V -0.5μA MONI pin saturation voltage VsatmonImoni = 1mA400mVCharge pump VG output voltage VG2828.729.8VRise timetONG VG = 0.1μF 200 μS Oscillator frequencyFosc90125150kHzOutput short-circuit protection EMO pin saturation voltage Vsatemo Iemo = 1mA 400mV CEM pin charge currentIcemVcem = 0V71013μACEM pin threshold voltage Vtcem 0.81 1.2VPackage Dimensionsunit : mm (typ) 333301.02.02.204.03.03.25Ambient temperature, Ta –°CA l l o w a b l e p o we rd i s s i p a t i o n , P d m a x –WSubstrate Specifications (Substrate recommended for operation of LV8731V) Size : 90mm × 90mm × 1.6mm (two-layer substrate [2S0P]) Material : Glass epoxyCopper wiring density : L1 = 85% / L2 = 90% L1 : Copper wiring pattern diagram L2 : Copper wiring pattern diagramCautions1) The data for the case with the Exposed Die-Pad substrate mounted shows the values when 90% or more of the Exposed Die-Pad is wet.2) For the set design, employ the derating design with sufficient margin.Stresses to be derated include the voltage, current, junction temperature, power loss, and mechanical stresses such as vibration, impact, and tension.Accordingly, the design must ensure these stresses to be as low or small as possible. The guideline for ordinary derating is shown below : (1)Maximum value 80% or less for the voltage rating (2)Maximum value 80% or less for the current rating (3)Maximum value 80% or less for the temperature rating3) After the set design, be sure to verify the design with the actual product.Confirm the solder joint state and verify also the reliability of solder joint for the Exposed Die-Pad, etc.Any void or deterioration, if observed in the solder joint of these parts, causes deteriorated thermal conduction, possibly resulting in thermal destruction of IC.Pin Assignment1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 2244434241403938373635343332313029282726252423OUT1AVGOUT1A VMPGND CP2NC CP1NC VREG5VM1 ATT2VM1 ATT1RF1 EMORF1 CEMOUT1B EMMOUT1B CHOPOUT2A MONIOUT2A RST/BLKRF2 STEP/DC22RF2 FR/DC21VM2 MD2/DC12VM2 MD1/DC11NC DMNC OEPGND STOUT2B VREFOUT2B GNDTop viewLV8731VLV8731V Block DiagramContinued on next page.Continued on next page.Description of operationInput Pin Function(1) Chip enable functionThis IC is switched between standby and operating mode by setting the ST pin. In standby mode, the IC is set to power-save mode and all logic is reset. In addition, the internal regulator circuit and charge pump circuit do not operate in standby mode.ST Mode Internal regulator Charge pumpLow or Open Standby mode Standby StandbyOperating OperatingHigh Operatingmode(2) Drive mode switching pin functionThe IC drive mode is switched by setting the DM pin. In STM mode, stepping motor channel 1 can be controlled by the CLK-IN input. In DCM mode, DC motor channel 2 or stepping motor channel 1 can be controlled by parallel input. Stepping motor control using parallel input is 2-phase or 1-2 phase full torque.mode Application DM DriveLow or Open STM mode Stepping motor channel 1 (CLK-IN)High DCM mode DC motor channel 2 or stepping motor channel 1 (parallel)STM mode (DM = Low or Open)(2) Excitation mode setting functionmodeMD1 MD2 ExcitationInitial positionChannel 1 Channel 2 Low Low 2 phase excitation 100% -100%High Low 1-2 phase excitation 100% 0%Low High W1-2 phase excitation 100% 0%High High 4W1-2 phase excitation 100% 0% This is the initial position of each excitation mode in the initial state after power-on and when the counter is reset.(3) Position detection monitoring functionThe MONI position detection monitoring pin is of an open drian type.When the excitation position is in the initial position, the MONI output is placed in the ON state.(Refer to "Examples of current waveforms in each of the excitation modes.")分销商库存信息: ONSEMILV8731V-TLM-H。

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3 I ON = 300 mA I F = 5 mA t < 1s
2
RON ─ Ta
1
0-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Trigger LED current I FT (mA)
On-sate current I ON (mA)
Allowable On-sate current ION (mA)
Off-State Current
IOFF
VOFF = 20 V, Ta = 50°C
MIN. 1.0 ⎯ ⎯
⎯
TYP. 1.15 ⎯ 15
⎯
MAX. 1.3 10 ⎯
UNIT V μA pF
1000 pA
Capacitance
COFF
V = 0, f = 100 MHz, t < 1 s
⎯
5.0
12.0
TYP. ⎯ ⎯
IF 1
2
4
RL
VDD
VOUT 3
IF VOUT
tON
10%
90% tOFF
MAX. UNIT
500 μs
500
/
3
2007-10-01
Allowable forward current IF (mA)
Forward current I F (mA)
SYMBOL
TEST CONDITION
IFT IFC RON
ION = 100 mA IOFF = 10 μA ION = 100 mA, IF = 5 mA, t < 1 s
TLP3131
MIN.
⎯ 0.2 ⎯
TYP.
⎯ 0.75
1
MAX. UNIT
4
mA
⎯
mA
1.5
Ω
Isolation Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
11−5H1
Weight: 0.1 g (typ.)
Pin Configuration (top view)
Schematic
1
4
1
4
2
3
2
3
1 : ANODE
2 : CATHODE
3 : DRAIN
4 : DRAIN
/
1
2007-10-01
I F ─ Ta
100
80
60
40
20
0-20
0
20 40 60 80 100 120
Ambient temperature Ta (°C)
100 50 Ta = 25 °C 30
I F ─ VF
10
5 3
1
0.5 0.3
0.1
0.6
0.8
1
1.2
1.4
1.6
1.8
Forward voltage VF (V)
BVS
125 −40~125 −20~85
260 1500
°C °C °C °C Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
mA
−3.0
mA/°C
Junction Temperature
Tj
Storage Temperature Range
Tstg
Operating Temperature Range
Topr
Lead Soldering Temperature (10 s)
Tsol
Isolation Voltage (AC, 1 minute, R.H. <= 60%) (NOTE1)
Individual Electrical Characteristics (Ta = 25°C)
LED
CHARACTERISTIC Forward Voltage Reverse Current Capacitance
SYMBOL
VF IR CT
TEST CONDITION
IF = 10 mA VR = 5 V V = 0, f = 1 MHz
BVS
AC, 1 second (in oil)
DC, 1 minute (in oil)
MIN. TYP.
⎯ 5 × 1010
1500 ⎯ ⎯
0.8 1014
⎯ 3000 3000
MAX. UNIT
⎯
pF
⎯
Ω
⎯ Vrms
⎯
⎯
Vdc
Switching Characteristics (Ta = 25°C)
Features
• 4 pin SOP (2.54SOP4) • 1-Form-A • Peak Off-State Voltage • Trigger LED Current • On-State Current • On-State Resistance • Output Capacitance • Isolation Voltage
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Turn-on Time Turn-off Time
tON tOFF
RL = 200 Ω
(NOTE 2) ⎯
VDD = 10 V, IF = 10 mA
⎯
(NOTE 2) : SWITCHING TIME TEST CIRCUIT
(NOTE 1) : Device considered a two-terminal device : Pins 1 and, 2 shorted together, and pins 3 and 4 shorted together.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed.
0.5
1
On-sate voltage VON (V)
5
I ON = 100 mA
t < 1s 4
I FT ─ Ta
3
2
1
0-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
On-sate resistance RON (Ω)
/
4
2007-10-01
Switching time tON,tOFF (µs)
1000 300 100 30 101
tON,tOFF ─ I F
Ta = 25 ℃ VDD =10 V, RL = 200 Ω
t OFF
t ON
3
10
30
100
TLP3131
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
LED
Forward Current Forward Current Derating (Ta >= 25°C) Reverse Voltage Junction TemperaturepFDETECFra bibliotekOR/
2
2007-10-01
Coupled Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
Trigger LED Current Return LED Current On-State Resistance
CHARACTERISTIC Capacitance Input to Output Isolation Resistance
Isolation Voltage
SYMBOL
TEST CONDITION
CS
VS = 0 V, f = 1 MHz
RS
VS = 500 V, R.H. <= 60%
AC, 1 minute
Off-State Output Terminal Voltage
IF ΔIF/°C
VR Tj VOFF