FOSAN富信电子 二级管 SMBZ5913B-SMBZ5956B-产品规格书

Max. 3.50 3.80 4.10 4.56 4.93 5.36 5.92 6.51 7.18 7.88 8.67 9.59 10.5 11.6 12.6 14.1 15.8 17.1 19.2 21.2 23.3 26.0 28.9 32.0 34.9 37.9 41.5 45.6 49.8 54.0 58.8 65.6 71.7 78.8 87.0 96.0 105 116 127 142 157 172 191 211
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
SMB Surface Mounted Zener Diode 表面贴装稳压二极管 ■SMB(DO-214AA) Internal Configuration 内部结构
SMBZ5913B-SMBZ5956B
SMBZ5913B-SMBZ5956B
■Dimension 外形封装尺寸
931B
15 47
932B
17 43
933B
18 38
934B
21 35
935B
23 31
936B
25 28
937B
27 26
938B
30 24
939B
32 22
940B
35 20
941B
38 18
942B
42 17
943B
47 15
944B
52 14
945B
56 12
946B
62 11
947B
69 10
结温和储藏温度
Symbol 符号 PD(Ta=25℃) PD(TL=75℃) VF(@ IF=200mA)
VZ RθJL RθJA TJ,Tstg
Max 最大值 550 3000 1.5
3.3-200 25 226
Unit 单位 mW mW V V ℃/W ℃/W
150℃,-55to+150℃
■Electrical Characteristics 电特性 (TA=25℃ unless otherwise noted 如无特殊说明，温度为 25℃)
1 243 915B
1 219 916B
1 203 917B
1 186 918B
2 170 919B
3 154 920B
4 140 921B
5 127 922B
6 116 923B
7 104 924B
7
95
925B
8
86
926B
9
79
927B
10 71
928B
11 63
929B
12 58
930B
13 52
IZT (mA)
75 69 64 58 53 49 45 41 37 34 31 28 25 23 21 19 17 16 14 13 12 11 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 2.3 2.0 1.9 1.7 1.6 1.4 1.2
VZ(V)@IZT Min. 3.10 3.40 3.70 4.06 4.50 4.84 5.32 5.86 6.46 7.12 7.79 8.60 9.50 10.4 11.4 12.4 13.8 15.2 16.8 19.0 20.8 22.8 25.3 28.2 31.3 34.2 37.2 40.9 44.9 48.6 53.6 58.9 64.6 71.2 77.9 86.0 95.0 104 114 125 140 155 170 189
948B
76 9.5 949B
84 8.6 950B
91 7.8 951B
100 7.0 952B
110 6.3 953B
120 5.8 954B
135 5.2 955B
150 4.7 956B
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
IR(uA) @VR
100 100 50 25 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
VR (V)
IZRM (mA)
Marking
1 285 913B
1 263 914B
Figure 4: Temperature Coefficient
Figure 5: Temperature Coefficient
Figure 6: Zener Impedance
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
SMBZ5913B-SMBZ5956B
■Typical Characteristic Curve 典型特性曲线
Figure 1: Power Derating Curve
Figure 2: Zener Breakdown Characteristics
Figure 3: Zener Breakdown Characteristics
安徽富信半导体科技有限公司
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO. , LTD.
Type Number
SMBZ5913B SMBZ5914B SMBZ5915B SMBZ5916B SMBZ5917B SMBZ5918B SMBZ5919B SMBZ5920B SMBZ5921B SMBZ5922B SMBZ5923B SMBZ5924B SMBZ5925B SMBZ5926B SMBZ5927B SMBZ5928B SMBZ5929B SMBZ5930B SMBZ5931B SMBZ5932B SMBZ5933B SMBZ5934B SMBZ5935B SMBZ5936B SMBZ5937B SMBZ5938B SMBZ5939B SMBZ5940B SMBZ5941B SMBZ5942B SMBZ5943B SMBZ5944B SMBZ5945B SMBZ5946B SMBZ5947B SMBZ5948B SMBZ5949B SMBZ5950B SMBZ5951B SMBZ5952B SMBZ5953B SMBZ5954B SMBZ5955B SMBZ5956B
■Features 特点
Characteristic dissipation 耗散功率
Forward Voltage 正向电压 Reverse Voltage 反向电压 Thermal Resistance J-L 结到管脚热阻 Thermal Resistance J-A 结到环境热阻 Junction and Storage Temperature
ZZT(Ω) @IZT 10 10 9.0 9.0 8.0 7.0 5.0 2.0 3.5 4.0 4.5 5.0 7.0 8.0 9.0 10 14 16 20 22 23 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250 350 450 550 700 900 1100 1200 1400
Nom. 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 135 150 165 180 200