Structure of a CMOS image sensor and method for fa
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专利名称：Structure of a CMOS image sensor and
method for fabricating the same
发明人：Soo-Genn Lee,Ki-Chul Park,Kyoung-Woo Lee
申请号：US10998803
申请日：20041130
公开号：US20050087784A1
公开日：
20050428
专利内容由知识产权出版社提供
专利附图：
摘要：An image sensor device and method for forming the same include a photodiode formed in a substrate, at least one electrical interconnection line electrically associated with the photodiode, a light passageway having a light inlet, the light passageway being
positioned in alignment with the photodiode, a color filter positioned over the light inlet of the light passageway and a lens positioned over the color filter in alignment with the light passageway wherein the at least one electrical interconnection line includes a copper interconnection formation having a plurality of interlayer dielectric layers in a stacked configuration with a diffusion barrier layer between adjacent interlayer dielectric layers, and a barrier metal layer between the copper interconnection formation and the plurality of interlayer dielectric layers and intervening diffusion barrier layers. An image sensor device may employ copper interconnections if a barrier metal layer is removed from above a photodiode.
申请人：Soo-Genn Lee,Ki-Chul Park,Kyoung-Woo Lee
地址：Su-won KR,Su-Won KR,Seoul KR
国籍：KR,KR,KR
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