BCP54BCP56中文资料

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PCM56中文资料

®
PCM56
2
元器件交易网
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltages ...................................................................... ±16VDC Input Logic Voltage ............................................................ –1V to +VS/+VL Power Dissipation .......................................................................... 850mW Operating Temperature ..................................................... –25°C to +70°C Storage Temperature ...................................................... –60°C to +100°C Lead Temperature (soldering, 10s) ................................................ +300°C
Reference 16-Bit IOUT DAC
RF
16-Bit Input Latch
Audio Output
16-Bit Serial-to-Parallel Conversion Clock LE Data
International Airport Industrial Park • Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: (520) 746-1111 • Twx: 910-952-1111 • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

BCP55中文资料

BCP55/56MEDIUM POWER AMPLIFIERADVANCE DATAsSILICON EPITAXIAL PLANAR NPN TRANSISTORSsMINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITSsGENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGEsPNP COMPLEMENTS ARE BCP52 AND BCP53 RESPECTIVELYOctober 1997ABSOLUTE MAXIMUM RATINGS1/4THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 oC unless otherwise specified)BCP55/562/4BCP55/563/4Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.BCP55/564/4。

BCP54驱动电路实验

BCP54驱动电路实验在H13产品中该电路使用Q25（BC817）作为钥匙灯口线的驱动三极管，BC817为SOT23封装，功率较小，故障率高。

因此更换SOT223封装Q54（BCP54)，增大功率承受力，并增加恒流源保护电路，以期满足驱动口线对电源短路时的可靠性要求。

更换Q54（BCP54)后电路参数如上图，Q27（BC817）与R155（1.2Ω）组成恒流源电路限制该驱动口线的最大通过电流。

BC817 Vbe与电流和温度曲线该电路接真实负载测试波形如下（采样1.2Ω电阻压降，电源电压13V）：通过波形可以看出，由于钥匙灯为阻性灯泡，在导通初始，灯丝温度低阻抗小，存在一个持续约5ms脉冲启动电流使灯丝温度快速升高，灯丝阻抗稳定后工作电流约为100mA。

此时1.2Ω电阻压降低于Q27（BC817）Vbe结压，恒流源电路没有工作，Q54（BCP54)工作在饱和导通状态。

该驱动电路对电源短路测试波形如下（1.2Ω电阻压降，电源电压13V）：通过波形可以看出，Q27（BC817）Vbe压降限制了1.2Ω电阻上通过的电流，此时Q54（BCP54)、Q27（BC817）、R155（1.2Ω）三个器件组成恒流源电路，Q54（BCP54)和Q27（BC817）工作在线性导通状态。

在对电源短路情况下，Q27（BC817）Ib电流较大，导致Q27（BC817）Vbe压降达到1V，短路电流为Vbe/R155=1V/1.2Ω=835mA。

而Q54（BCP54)工作在线性导通时，Vce压降达到12V，Q54（BCP54)承受的功耗为12V*835mA=10W，远超过该器件手册功率0.96W（collector 1 cm2，PCB实际铺铜面积约为1 cm2）。

测试环境温度约16℃，通电后13秒后元件温度超过125℃，31秒后达到191℃，很快损毁。

通电13S温度通电31S温度该电路的结构是通过恒流源电路限制口线的最大电流，以保护电路。

BCP53_中等功率晶体管

Product speciﬁcation
BCP51; BCP52; BCP53
160
handbook, full pagewidth
hFE 120
80
40
0 −10−1
VCE = −2 V
MBH730
−1
−10
−102
Fig.2 DC current gain; typical values.
−103
Application information
Where application information is given, it is advisory and does not form part of the speciﬁcation.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”.

贴片三极管bcp56最大电流_概述说明以及解释

贴片三极管bcp56最大电流概述说明以及解释1. 引言1.1 概述贴片三极管BCP56是一种常用的电子元件，它具有广泛的应用领域。

在实际应用中，BCP56的最大电流是一个重要参数，它决定了三极管能够承受的最大电流值。

本文旨在对BCP56的最大电流进行全面的概述和解释，并探讨其与其他参数之间的关系。

1.2 文章结构本文将按照以下结构进行论述：首先介绍贴片三极管BCP56的基本特性，包括其构造、材料以及工作原理；接着重点阐述最大电流对BCP56的影响和重要性，包括最大电流参数说明、正确选择最大电流值以及最大电流对性能的影响和限制；随后分析BCP56最大电流与其他参数之间的关系，并给出相应实验结果解释；最后总结研究结果并展望贴片三极管BCP56最大电流在未来的应用前景。

1.3 目的通过本文对贴片三极管BCP56最大电流进行概述说明和解释，我们旨在提供读者对该参数重要性和应用价值的充分认识，并帮助读者正确选择适合的最大电流值。

同时，通过分析BCP56最大电流与其他参数之间的关系，我们希望为进一步研究和应用贴片三极管BCP56提供参考和启示。

注意：以上内容为普通文本格式，请根据需要进行排版和格式调整。

2. 贴片三极管BCP56的基本特性：2.1 构造和材料：贴片三极管BCP56是一种由半导体材料构成的电子元件。

它通常由硅制成，具有三个电极：发射极、基极和集电极。

这些电极之间通过不同材料的层层堆叠和掺杂而形成。

2.2 工作原理：BCP56贴片三极管通过控制基极的信号，调节发射区的电流，从而实现放大和开关功能。

当正向偏置应用到基极时，使得发射结与基结反偏以打开了PNP型晶体管，电流可以从集电结流入拍平的绝缘衬底中。

2.3 典型应用场景：BCP56贴片三极管在很多领域都有广泛的应用。

它可以作为功率放大器、开关、稳压器等组件使用。

在通信设备、音频放大器、自动化系统和移动设备等领域也被广泛采用。

以上就是贴片三极管BCP56的基本特性部分的内容。

MPC566CZP56中文资料

MPC565/M NhomakorabeaC566
PRODUCT BRIEF
MOTOROLA 2
元器件交易网
22-Channel MIOS timer (MIOS14) • Six modulus counter sub-module (MCSM) — Four additional MCSM submodules compared to MIOS1 • 10 double action sub-module (DASM). • 12 dedicated PWM sub-modules (PWMSM) — Four additional PWM submodules compared to MIOS1 (shared with MIOS GPIO pins) • Real-time clock sub-module (MRTCSM) provides low power clock/counter — Requires external 32-KHz crystal — Uses four pins: two for 32-KHz crystal, two for power/ground. Two Queued Analog-to-Digital Converter Modules (QADC64E_A, QADC64E_B) • AMUXes providing a total of 40 analog channels. • 40 total input channels on the two modules with internal multiplexing (AMUXes) • Each QADC64E can see all 40 input channels • 10 bit A/D converter with internal sample/hold • Typical conversion time is 4 µs (250-Kbyte samples/sec) • Two conversion command queues of variable length • Automated queue modes initiated by: — External edge trigger/level gate — Software command — Periodic/interval timer, assignable to both queue 1 and 2 • 64 result registers in each QADC64E module • Conversions alternate reference (ALTREF) pin. This pin can be connected to a different reference voltage • Output data is right or left justified, signed or unsigned Message Data Link Controller (DLCMD2) Module • Two pins muxed with QSMCM_B pins. Muxing controlled by QSMCM_B PCS3 pin assignment register • SAE J1850 Class B data communications network interface compatible and ISO compatible for low-speed (< 125 Kbps) serial data communications in automotive applications • 10.4 Kbps variable pulse width (VPW) bit format • Digital noise filter, collision detection • Hardware cyclical redundancy check (CRC) generation and checking • Block mode receive and transmit supported • 4X receive mode supported (41.6 Kbps) • Digital loopback mode • In-frame response (IFR) types 0, 1, 2, and 3 supported • Dedicated register for symbol timing adjustments • Inter-module bus 3 (IMB3) slave interface • Power-saving IMB3 stop mode with automatic wakeup on network activity • Power-saving IMB3 CLOCKDIS mode • Debug mode available through IMB3 FREEZE signal or user controllable SOFT_FRZ bit • Polling and IMB3 interrupt generation with vector lookup available Three TouCAN™ Modules (TOUCAN_A, TOUCAN_B, TOUCAN_C) • 16 message buffers each, programmable I/O modes • Maskable interrupts • Programmable loop-back for self test operation • Independent of the transmission medium (external transceiver is assumed) • Open network architecture, multimaster concept • High immunity to EMI • Short latency time for high-priority messages • Low power sleep mode, with programmable wake up on bus activity

普瑞54mil芯片规格书

BRIDGELUX BLUE POWER DIEBXCE 54 x 54 milPRODUCT DATA SHEET DS-C14The Bridgelux family of blue power die enables high performance and cost effective solutions to serve solid state lighting market. This next generation chip technology delivers improved efficiency and performance to enable increased light output for a variety of lighting, signaling and display applications.Features•High lumen output and efficiency•Long operating life•Increased current spreading traces for highly efficient and uniform illumination •100% Tested and sorted by wavelength, power and forward voltage•Lambertian emission pattern•Compatible with Solder paste, solder preform or silver epoxy die attach •Delivered on medium tack blue tape(20cm±10mm ×20 cm±10mm) Applications•General Illumination•Street Lights•Portable Lighting•Architectural Lighting•Directional Lighting•Wide Area Lighting•Display Backlighting•Digital Camera Flash•Automotive Lighting•White LEDsLED Chip DiagramPart Numbering and Bin DefinitionsBridgelux LED chips are sorted into the brightness and dominant wavelength bins shown below at I f = 350 mA. Each blue tape contains die from only one brightness bin and one wavelength bin.Each blue tape contains chips with 0.2 V forward voltage bins: 3.0 - 3.2 V, 3.2 - 3.4 V and 3.4 - 3.5 V. The typical forward voltage is 3.4 V and the maximum forward voltage (V f max) = 3.5 V.Dominant Wavelength Power Bin E2(320-340 mW)Power Bin F1(340 – 360 mW)Power Bin F2(360 – 380 mW)445 to 447.5nm BXCE5454445- E2-z BXCE5454445- F1-z BXCE5454445- F2-z 447.5 to 450nm BXCE5454447- E2-z BXCE5454447- F1-z BXCE5454447- F2-z 450 to 452.5nm BXCE5454450- E2-z BXCE5454450- F1-z BXCE5454450- F2-z 452.5 to 455nm BXCE5454452- E2-z BXCE45454452- F1-z BXCE5454452- F2-z455 to 457.5nm BXCE5454455- E2-z BXCE5454455- F1-z BXCE5454455- F2-z 457.5 to 460nm BXCE5454457- E2-z BXCE5454457- F1-z BXCE5454457- F2-z 460 to 462.5nm BXCE45454460- E2-z BXCE5454460- F1-z BXCE5454460- F2-z 462.5 to 465nm BXCE5454462- E2-z BXCE5454462- F1-z BXCE5454462- F2-zDominant Wavelength Power Bin G1(380-400 mW)Power Bin G2(400 – 420 mW)445 to 447.5nm BXCE5454445- G1-z BXCE5454445-G2-z 447.5 to 450nm BXCE5454447- G1-z BXCE5454447- G2-z 450 to 452.5nm BXCE5454450- G1-z BXCE5454450- G2-z 452.5 to 455nm BXCE54545452- G1-z BXCE45454452- G2-z455 to 457.5nm BXCE5454455- G1-z BXCE5454455- G2-z 457.5 to 460nm BXCE5454457- G1-z BXCE5454457- G2-z 460 to 462.5nm BXCE45454460- G1-z BXCE5454460- G2-z 462.5 to 465nm BXCE5454462- G1-z BXCE5454462- G2-zProduct NomenclatureB XC E 5 4 5 4 X X X – Y Y – ZWhere:BXCE: Designates product family5454: Designates die size (45 mil x 45 mil)XXX: Designates dominant wavelength binYY: Designates radiometric power binZ: Designates forward voltage binBRIDGELUX BLUE POWER DIEBXCE 54 X 54 MILMechanical DimensionsABSOLUTE MAXIMUM RATINGSNotes:1. Maximum drive current depends on junction temperature, die attach methods/materials, and lifetimerequirements of the application.2. Bridgelux LED chips are Class 1 ESD sensitive.3. The typical spectra half-width of the BXCE5454 blue power die is < 25 nm.4. Please consult the Bridgelux technical support team for information on how to optimize the light outputof our chips in your package.5. Brightness values are measured in an integrating sphere using gold plated TO39 headers withoutencapsulation.6. Tapes should be stored in a vertical orientation, not horizontally stacked. Stacking of tapes can placeexcessive pressure on the bond pads of the LED, resulting in reduced wire bonding strength.Environmental ComplianceBridgelux is committed to providing environmentally friendly products to the solid state lightingmarket. Bridgelux BXCE5454 blue power die are compliant to the European Union directives on the restriction of hazardous substances in electronic equipment, namely the RoHS directive. Bridgelux will not intentionally add the following restricted materials to BXCE4545 die products: lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated diphenyl ethers (PBDE).Chip Size 1372 +30/-15 µm × 1372 +30/-15 µm (54 mil x 54 mil)Wafer Thickness 150 ± 10 µm (5.9 mil)Au Pad Thickness4.3 ± 0.2 µm Au Pad Diameter P Pad (2X): 100 µm N Pad (2X): 105 µmParameterSymbolMinimum RatingMaximum Rating Condition DC Forward Current I f 700 mA 1T j = 140°C Forward Voltage V f 3.0 V 3.4 V I f = 350 mAJunction Temperature T j 150°C Reverse Voltage V r --- -5 V I r = 10 µA Reverse Current I r --- 2.0 µA V r = -5 V Optical Power (minimum) P 0320 mW---I f = 350 mAAssembly Process Temperature 325°C for < 5 seconds Storage Conditions (chip on tape)60°C to +40°C ambient, RH < 65%BRIDGELUX BLUE POWER DIEBXCE 54 x 54 milPerformance vs. CurrentThe following curves represent typical performance of the BXCE5454 blue power die. Actual performance will vary slightly for different power and dominant wavelength bins.Figure 1: Relative Luminous Intensity vs. Forward Current (device tested on a probe station)Figure 2: Forward Current vs. Forward Voltage (T j = 25°C)110100100012345Forward Voltage, V f (V)F o r w a r d C u r r e n t , I f (m A )0.00.51.01.52.02.51002003004005006007008009001000Forward Current, I f (mA)R e l a t i v e L u m i n o u s I n t e n s i t y N o r m a l i z e d a t 350 m ABRIDGELUX BLUE POWER DIEBXCE 54 x 54 milPerformance vs. Junction TemperatureThe following curves represent typical performance of the BXCE5454 blue power die. Actual performance will vary slightly for different power and dominant wavelength bins.Figure 3: Forward Voltage vs. Junction TemperatureFigure 4: Relative Light Output vs. Junction Temperature-0.40-0.35-0.30-0.25-0.20-0.15-0.10-0.050.00255075100125150Junction Temperature (ºC)F o r w a r d V o l t a g e S h i f t (V )N o r m a l i z e d a t 350m A ,T j 25°C0%10%20%30%40%50%60%70%80%90%100%110%255075100125150Junction Temperature (ºC)R e l a t i v e L i g h t I n t e n s i t y N o r m a l i z e d a t 350m A ,T j 25°CNLX-5 BLUE POWER DIEBXCE 54 x 54 milFigure 5: Wavelength Shift vs. Junction TemperatureTypical Radiation PatternFigure 6: Typical Radiation Pattern (350 mA Operation)0123456255075100125150Junction Temperature (ºC)W a v e l e n g t h S h i f t (n m )N o r m a l i z e d a t 350m A ,T j 25°CBRIDGELUX BLUE POWER DIEBXCE 54 x 54 milCurrent Derating CurvesFigure 7: Current Derating Curve vs. Ambient Temperature (derating based on T j max 150°C)About BridgeluxBridgelux is a leading developer and manufacturer of technologies and solutions transforming the $40 billion global lighting industry into a $100 billion market opportunity. Based in Livermore, California, Bridgelux is a pioneer in solid-state lighting (SSL), expanding the market for light-emitting diode (LED) technologies by driving down the cost of LED lighting systems. Bridgelux’s patented light source technology replaces traditional technologies (such as incandescent, halogen, fluorescent and high intensity discharge lighting) with integrated, solid-state lighting solutions that enable lamp andluminaire manufacturers to provide high performance and energy-efficient white light for the rapidly growing interior and exterior lighting markets, including street lights, commercial lighting andconsumer applications. With more than 500 patent applications filed or granted worldwide, Bridgelux is the only vertically integrated LED manufacturer and developer of solid-state light sources that designs its solutions specifically for the lighting industry.For more information about the company, please visit 01002003004005006007008000102030405060708090100110120Ambient Temperature, T a (o C)F o r w a r d C u r r e n t , I f (m A )Rja = 20 Deg C/WRja = 40 Deg C/WRja = 60 Deg C/W。

bcp参数详解

bcp 说明以用户指定的格式将数据库表复制到操作系统文件或从操作系统文件中复制出来。

bcp 位于$SYBASE/$SYBASE_OCS/bin 中。

Windows NT 实用程序是 bcp.exe，它位于 %SYBASE%\%SYBASE_OCS%\bin 中。

语法 bcp [[database_name.]owner.]table_name [:slice_number] {in | out} datafile[-m maxerrors][-f formatfile][-e errfile][-F firstrow][-L lastrow][-b batchsize][-n][-c][-t field_terminator][-r row_terminator]-U username[-P password][-I interfaces_file][-S server][-a display_charset][-z language][-A packet_size][-J client_charset][-T text_or_image_size][-E][-g id_start_value][-N][-X][-K keytab_file][-R remote_server_principal][-V [security_options]][-Z security_mechanism][-Q][-Y]或bcp -v参数 database_name如果正被复制的表位于缺省数据库或 master 中，则此参数是可选项。

否则，必须指定数据库名。

所有者如果您或数据库所有者拥有正被复制的表，则此参数是可选项。

如果未指定所有者，bcp 首先查找您所拥有的表是否有此名称，然后查找数据库所有者所拥有的表是否有此名称。

如果其他用户拥有此表，则必须指定所有者名，否则命令将失败。

view_name是正在拷出的视图名。

BCP56-10中文资料

10 3 BCP 54...56 MHz fT 5
EHP00267
Total power dissipation Ptot = ƒ(TS)
2.4 W
Ptot
1.6
10 2
1.2
5
0.8
0.4
10 1 10 0
53 ΙC
Permissible Pulse Load RthJS = ƒ(tp)
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
-
VBE(ON)
-
-
0.5 V
-
1
AC Characteristics Transition frequency IC = 50 mA, VCE = 10 V, f = 100 MHz

BCP56-10中文资料

1999 Apr 08
2
元器件交易网
Philips Semiconductors
Product speciﬁcation
NPN medium power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Note PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point
Philips Semiconductors
Product speciﬁcation
NPN medium power transistors
BCP54; BCP55; BCP56
CONDITIONS note 1
VALUE 94 13
UNIT K/W K/W
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 125 °C IC = 0; VEB = 5 V IC = 5 mA; VCE = 2 V IC = 150 mA; VCE = 2 V IC = 500 mA; VCE = 2 V hFE DC current gain BCP55-10; 56-10 BCP54-16; 55-16; 56-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = 0.5 A; IB = 50 mA IC = 0.5 A; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V 63 100 − − − − MIN. − − − 25 63 25 TYP. − − − − − − − − − − − 130 − 160 250 500 1 − 1.6 mV V MHz MAX. 100 10 100 − 250 − UNIT nA µA nA

BCP56;中文规格书,Datasheet资料

TA = 25°C unless otherwise noted
BCP56 80 100 5 1.2 -55 to +150
Units V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty crmal Characteristics
Symbol
TA = 25°C unless otherwise noted
Max Characteristic BCP56 PD RθJA Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient 1 8 125 W mW/°C °C/W Units
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

BCP56-16中文资料

handbook, halfpage
BCP54; BCP55; BCP56
PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION
4
2, 4 1 3
1 Top view 2 3
MAM287
Fig.1
Simplified outline (SOT223) and symbol.
Philips Semiconductors
Product speciﬁcation
NPN medium power transistors
1999 Apr 08
3
元器件交易网
Philips Semiconductors
Product speciﬁcation
NPN medium power transistors
PACKAGE OUTLINE
BCP54; BCP55; BCP56
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
元器件交易网
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BCP54; BCP55; BCP56 NPN medium power transistors
Product speciﬁcation Supersedes data of 1997 Apr 08 1999 Apr 08
1999 Apr 08
5
元器件交易网
Philips Semiconductors
Product speciﬁcation

BCP52-16中文资料

4
2, 4
DESCRIPTION
PNP medium power transistor in a SOT223 plastic package. NPN complements: BCP54, BCP55 and BCP56.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
CONDITIONS open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN.
MAX.
UNIT
−
−45
V
−
−60
V
−
−100
V
−
−45
V
−
−60
V
−
−80
V
−
−5
V
−
−1
A
−
−1.5
A
−
−0.2
A
−
1.3
W
−65
+150
°C
−
150
பைடு நூலகம்
°C
−65
SOT223
D
B
E
A
X
c y
HE
b1
4
vM A
A1
1
2
3
e1
bp
e
wM B
Q A
Lp detail X
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)

BCP56-16T1G;BCP56T1G;BCP56-16T3G;BCP56T3G;BCP56-16T1;中文规格书,Datasheet资料

Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) All Part Types (IC = 150 mA, VCE = 2.0 V)BCP56T1, SBCP56T1, SBCP56T3 BCP56−10T1, SBCP56−10T1 BCP56−16T1, SBCP56−16T1, SBCP56−16T3 (IC = 500 mA, VCE = 2.0 V)All Types
Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector−Base Cutoff Current (VCB = 30 Vdc, IE = 0)
(Pb−Free)
1000 / Tape & Reel
BCP56T3G SBCP56T3G
BH
SOT−223
(Pb−Free)
4000 / Tape & Reel
BCP56−10T1G SBCP56−10T1G
BH−10
SOT−223 (Pb−Free)
1000 / Tape & Reel
BCP56−16T1G SBCP56−16T1G
1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in.

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR

爱立信PDG54N0800E2MN型号的商品说明书

Eaton PDG54N0800E2MNEaton Power Defense molded case circuit breaker, Globally Rated, Frame 5, Four Pole (100% N), 800A, 85kA/480V, PXR20 LSI w/ Modbus RTU and Relays, No TerminalsEaton Power Defense molded case circuit breakerPDG54N0800E2MN 786679211021139.7 mm 406.4 mm 282.7 mm 21.32 kg Eaton Selling Policy 25-000, one (1) year from the date of installation of theProduct or eighteen (18) months from thedate of shipment of the Product,whichever occurs first.RoHS Compliant IEC 60947-2CSAUL 489CCC MarkedProduct NameCatalog Number UPCProduct Length/Depth Product Height Product Width Product Weight WarrantyCompliancesCertifications800 AComplete breaker 5Four-pole (100% N)PD5 Global Class A PXR 20 LSIModbus RTU600 Vac600 V100% neutral protectionNo Terminals85 kAIC at 480 Vac85 kAIC @480/277V (UL)50 kAIC @600/347V (UL)70 kAIC Icu/ 50 kAIC Ics/ 154 kAIC Icm @380-415V (IEC) 150 kAIC @240V (UL)20 kAIC Icu/ 10 kAIC Ics/ 42 kAIC Icm @690V (IEC)65 kAIC Icu/ 40 kAIC Ics/ 143 kAIC Icm @480V Brazil (IEC) 150 kAIC Icu/ 100 kAIC Ics/ 330 kAIC Icm @240V (IEC)70 kAIC Icu/ 50 kAIC Ics/ 154 kAIC Icm @440V (IEC)35 kAIC Icu/ 25 kAIC Ics/ 73.5 kAIC Icm @525V South Africa (IEC)800 A Eaton Power Defense MCCB PDG54N0800E2MN 3D drawingConsulting application guide - molded case circuit breakersPower Xpert Protection Manager x64StrandAble terminals product aidPower Defense technical selling bookletPower Defense brochurePower Defense molded case circuit breaker selection posterPower Defense molded case circuit breakers - Frame 5 product aid Power Xpert Release trip units for Power Defense molded case circuitAmperage RatingCircuit breaker frame type FrameNumber of poles Circuit breaker type ClassTrip Type CommunicationVoltage ratingVoltage rating - maxProtectionTerminalsInterrupt rating Interrupt rating rangeTrip rating 3D CAD drawing package Application notes BrochuresCatalogsbreakersMolded case circuit breakers catalogCertification reportsPDG5 CSA CertificationPDG6 CCC certificatePDG5 CCC certificationPDG6 CSA certificationPDG5 CB reportPDG5 UL authorizationEU Declaration of Conformity - Power Defense molded case circuit breakersInstallation instructionsPower Defense Frame 2/3/4/5/6 voltage neutral sensor module wiring instructions – IL012316ENPower Defense Frame 5 breaker status module installation instructions – IL012307ENPower Defense Frame 5 vertical padlockable handle lock hasp installation instructions - IL012283ENPower Defense Frame 4_5 flex shaft handle mech assembly instructions - IL012284ENPower Defense Frame 4_5_6 high performance flex shaft handle mech assembly instructions - IL012296ENPower Defense Frame 5 key interlock installation instructions -IL012294ENPower Defense Frame 5 walking beam installation instructions -IL012290ENPower Defense Frame 5 interphase barrier kit 4 pole installation instructions - IL012293ENPower Defense Frame 5 aux, alarm, shunt trip and uvr instructions(IL012201EN).pdfInstallation videosPower Defense Frame 5 UVR Trip How-To VideoPower Defense Frame 5 Trip Unit Replacement Animated Instructions Power Defense Frame 5 Trip Unit Upgrade Relays Board, Animated Instructions.rhPower Defense Frame 5 Shunt Trip, Aux and Alarm Trip How-To Video Power Defense Frame 5 Aux, Alarm, ST and UVR Animated Instructions.rh1Power Defense Frame 5 Trip Unit Upgrade Wire Harnesses, Animated Instructions.rhMultimediaEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmediaPower Defense Frame 5 Trip Unit How-To Video Power Defense BreakersEaton Power Defense for superior arc flash safetyPower Defense Frame 3 Variable Depth Rotary Handle Mechanism Installation How-To VideoPower Defense Frame 6 Trip Unit How-To Video Power Defense molded case circuit breakersPower Defense Frame 2 Variable Depth Rotary Handle Mechanism Installation How-To Video Eaton Specification Sheet - PDG54N0800E2MN Power Defense time current curve Frame 5 - PD5Molded case and low-voltage power circuit breaker health Intelligent power starts with accurate, actionable data Single and double break MCCB performance revisited Intelligent circuit protection yields space savings Making a better machineImplementation of arc flash mitigating solutions at industrial manufacturing facilitiesSafer by design: arc energy reduction techniques Molded case and low-voltage breaker healthSpecifications and datasheetsTime/current curvesWhite papers。

CommScope 54-芯多芯多发射芯模块说明书

4-port multibeam antenna, 4x 694–896 MHz, 2x 37° HPBW, 2x RETwith manual override.Integrated Internal Remote Electrical Tilt (RET), with independent control of electrical tilt withmanual override on both beamsEach port has an integrated bias tee, and each beam has its own smart switch thatautomatically selects between bias tee or AISG inputs according to a predetermined priority tableSingle panel design supporting two separate beams perfectly optimized at horizontal pointingangles of +27 degrees and –27 degrees from boresightGeneral SpecificationsAntenna Type MultibeamBand Single bandGrounding Type RF connector body grounded to reflector and mounting bracket Performance Note Outdoor usage | Wind loading figures are validated by wind tunnelmeasurements described in white paper WP-112534-ENRadome Material Fiberglass, UV resistantRadiator Material Copper | Low loss circuit boardReflector Material AluminumRF Connector Interface7-16 DIN FemaleRF Connector Location BottomRF Connector Quantity, low band4RF Connector Quantity, total4Remote Electrical Tilt (RET) InformationRET Interface8-pin DIN Female | 8-pin DIN MaleRET Interface, quantity 1 female | 2 maleInput Voltage10–30 VdcInternal Bias Tee Port 1 | Port 2 | Port 3 | Port 4Internal RET Low band (2)Power Consumption, idle state, maximum 2 WPower Consumption, normal conditions, maximum13 WProtocol3GPP/AISG 2.0 (Single RET)15Page ofDimensionsWidth640 mm | 25.197 inDepth235 mm | 9.252 inLength2533 mm | 99.724 inNet Weight, without mounting kit47 kg | 103.617 lbElectrical SpecificationsImpedance50 ohmOperating Frequency Band694 – 896 MHzPolarization±45°Total Input Power, maximum700 W @ 50 °CElectrical SpecificationsFrequency Band, MHz694–806806–896 Gain, dBi17.918.7 Beam Centers, Horizontal, degrees±27±27 Beamwidth, Horizontal, degrees3936 Beamwidth, Vertical, degrees9.68.4 Beam Tilt, degrees0–100–10 USLS (First Lobe), dB2121 Front-to-Back Ratio at 180°, dB3440 Isolation, Cross Polarization, dB2525 Isolation, Inter-band, dB1818 VSWR | Return loss, dB 1.43 | 15.0 1.43 | 15.0 PIM, 3rd Order, 2 x 20 W, dBc-150-150 Input Power per Port at 50°C, maximum, watts200200 Electrical Specifications, BASTAFrequency Band, MHz694–806806–896 Gain by all Beam Tilts, average, dBi17.618.5 Gain by all Beam Tilts Tolerance, dB±0.6±0.3Gain by Beam Tilt, average, dBi0 ° | 17.65 ° | 17.610 ° | 17.60 ° | 18.5 5 ° | 18.5 10 ° | 18.4Beamwidth, Horizontal Tolerance, degrees±1.8±1.6Beamwidth, Vertical Tolerance, degrees±0.7±0.4Page of25USLS, beampeak to 20° above beampeak, dB2119 Front-to-Back Total Power at 180° ± 30°, dB2529 CPR at Boresight, dB2019 Mechanical SpecificationsWind Loading @ Velocity, frontal1,102.0 N @ 150 km/h (247.7 lbf @ 150 km/h) Wind Loading @ Velocity, lateral372.0 N @ 150 km/h (83.6 lbf @ 150 km/h) Wind Loading @ Velocity, maximum1,497.0 N @ 150 km/h (336.5 lbf @ 150 km/h) Wind Loading @ Velocity, rear1,135.0 N @ 150 km/h (255.2 lbf @ 150 km/h) Wind Speed, maximum200 km/h (124 mph)Packaging and WeightsWidth, packed797 mm | 31.378 inDepth, packed402 mm | 15.827 inLength, packed2684 mm | 105.669 inWeight, gross67 kg | 147.71 lbRegulatory Compliance/CertificationsAgency ClassificationISO 9001:2015Designed, manufactured and/or distributed under this quality management systemIncluded ProductsT-029-GL-E–Adjustable Tilt Pipe Mounting Kit for 2.362"-4.5" (60-115mm) OD round members for panelantennas. Includes 2 clamp sets.* FootnotesPerformance Note Severe environmental conditions may degrade optimum performancePage of35Adjustable Tilt Pipe Mounting Kit for 2.362"-4.5" (60-115mm) OD roundmembers for panel antennas. Includes 2 clamp sets.Product ClassificationProduct Type Adjustable tilt mounting kitGeneral SpecificationsApplication OutdoorColor SilverDimensionsCompatible Length, maximum2850 mm | 112.205 inCompatible Length, minimum1500 mm | 59.055 inCompatible Diameter, maximum115 mm | 4.528 inCompatible Diameter, minimum60 mm | 2.362 inAntenna-to-Pipe Distance85 mm | 3.346 inBracket-to-Bracket Distance1400 mm | 55.118 inWeight, net 6 kg | 13.228 lbMaterial SpecificationsMaterial Type Galvanized steelMechanical SpecificationsMechanical Tilt0°–8°Packaging and WeightsIncluded Brackets | HardwarePackaging quantity1Regulatory Compliance/CertificationsAgency ClassificationCE Compliant with the relevant CE product directives45Page ofCHINA-ROHS Below maximum concentration valueISO 9001:2015Designed, manufactured and/or distributed under this quality management system REACH-SVHC Compliant as per SVHC revision on /ProductCompliance ROHS CompliantUK-ROHSCompliantPage of55。