STD13003中文资料
TS13003_07中文资料
TO-92TO-126PRODUCT SUMMARYBV CEO 400V BV CBO 700V I C1.5AV CE(SAT)0.8V @ I C / I B = 0.5A / 0.1AFeatures● High Voltage● High Speed SwitchingStructure● Silicon Triple Diffused Type ● NPN Silicon TransistorOrdering InformationPart No.PackagePackingTS13003CT B0 TO-92 1Kpcs / Bulk TS13003CT B0G TO-92 1Kpcs / Bulk TS13003CT A3 TO-92 2Kpcs / Ammo TS13003CT A3G TO-92 2Kpcs / Ammo TS13003CK B0TO-1261Kpcs / BulkNote: “G” denote for Sb FreeBlock DiagramAbsolute Maximum Rating (Ta = 25o C unless otherwise noted)ParameterSymbolLimitUnitCollector-Base Voltage V CBO 700V V Collector-Emitter Voltage V CEO 400V V Emitter-Base Voltage V EBO9 V DC 1.5 Collector CurrentPulse I C 3 A TO-92 1.5 Total Power Dissipation @ Tc= 25oC TO-126P tot 30 WOperating Junction TemperatureT J +150 o C Operating Junction and Storage Temperature RangeT STG- 55 to +150oCThermal PerformanceParameterSymbolLimitUnitTO-92 122 Junction to Ambient Thermal ResistanceTO-126R ӨJA90oC/WPin Definition: 1. Emitter 2. Collector 3. BasePin Definition:1. Emitter2. Collector3. BaseElectrical Specifications (Ta = 25o C unless otherwise noted)ParameterConditions Symbol Min Typ Max UnitStaticCollector-Base VoltageI C = 1mA, I B = 0 BV CBO 700 -- -- V Collector-Emitter Breakdown Voltage I C = 10mA, I E = 0 BV CEO 400 -- -- V Emitter-Base Breakdown Voltage I E = 1mA, I C = 0 BV EBO 9 -- -- V Collector Cutoff Current V CB = 700V, I E = 0 I CBO -- -- 1 uA Emitter Cutoff CurrentV EB = 9V, I C = 0 I EBO -- -- 1 uACollector-Emitter Saturation Voltage *I C / I B = 0.5A / 0.1A I C / I B = 1.0A / 0.25A I C / I B = 1.5A / 0.5AV CE(SAT)1 V CE(SAT)2 V CE(SAT)3 -- -- -- 0.25 0.5 1.2 0.5 1 3 V Base-Emitter Saturation Voltage *I C / I B = 0.5A / 0.1A I C / I B = 1.0A / 0.25A V BE(SAT)1 V BE(SAT)2-- -- -- -- 1 1.2 V DC Current Gain *V CE = 5V, I C = 10mAV CE = 10V, I C = 400mA V CE = 2V, I C = 1Ah FE6 20 8-- -- --40 40 40Dynamic Characteristics FrequencyV CE = 10V, I C = 0.1A f T 4 -- -- MHz Output Capacitance V CB = 10V, f = 0.1MHz Cob -- 21 -- pF Resistive Load Switching Time (Ratings)Delay Time t d -- 0.05 0.2 uS Rise Time t r -- 0.5 1 uS Storage Time t STG -- 2 4 uS Fall TimeV CC = 125V, I C = 1A, I B1 = I B2 = 0.2A, t p = 25uS Duty Cycle ≤1%t f--0.40.7uS* Note: pulse test: pulse width ≤300uS, duty cycle ≤2%Electrical Characteristics Curve (Ta = 25o C, unless otherwise noted)Figure 1. Static CharacteristicsFigure 2. DC Current GainFigure 3. V CE(SAT) v.s. V BE(SATFigure 4. Power DeratingFigure 5. Reverse Bias SOAFigure 6. Safety Operating AreaTO-92 Mechanical DrawingMarking DiagramY = Year Code M = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeTO-92 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 4.30 4.70 0.169 0.185 B 4.30 4.70 0.169 0.185 C 14.30(typ) 0.563(typ) D 0.43 0.49 0.017 0.019 E 2.19 2.81 0.086 0.111 F 3.30 3.70 0.130 0.146 G 2.42 2.66 0.095 0.105 H0.37 0.43 0.015 0.017TO-126 Mechanical DrawingMarking DiagramY = Year CodeM = Month Code(A =Jan, B =Feb, C =Mar, D =Apl, E =May, F =Jun, G =Jul, H =Aug, I =Sep, J =Oct, K =Nov, L =Dec) L = Lot CodeTO-126 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX∝1 -- 3ºC --3ºC ∝2 -- 3ºC -- 3ºC ∝3 -- 3ºC -- 3ºC ∝4 -- 3ºC --3ºC A 0.150 0.153 3.81 3.91 B 0.275 0.279 6.99 7.09 C 0.531 0.610 13.50 15.50 D 0.285 0.303 7.52 7.72 E 0.034 0.041 0.95 1.05 F 0.028 0.031 0.71 0.81 G 0.048 0.052 1.22 1.32 H 0.170 0.189 4.34 4.80 I 0.095 0.105 2.41 2.66 J 0.045 0.055 1.14 1.39 K 0.045 0.055 1.14 1.39 L -- 0.021 -- 0.55 M0.137 0.152 3.50 3.86NoticeSpecifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.。
焊接企业认证ISO3834_DIN18800_EN15085常见问题汇总
焊接企业认证ISO3834、DIN18800、EN15085常见问题汇总焊接企业认证常见问题100问（一）通用问题1、焊接企业想取得国际资质（ISO3834、DIN18800、EN15085），需具备什么条件？答：焊接企业想取得国际资质（ISO3834、DIN18800、EN15085），需要满足的条件很多，如：a）人员方面，焊工必须具备EN287-1或ISO9606-2资质，焊接操作工必须具备EN1418或ISO14732资质，焊接监督人员必须具备国际焊接工程师等资质，焊接检验人员必须具备国际焊接质检人员资质，无损检测人员必须具备EN473或ISO9712资质等；b）焊接工艺评定必须按照ISO 15614系列标准进行，焊接工艺规程必须满足ISO15609的要求等；除此之外，还要满足材料、设备、厂房等方面的要求。
我们会在咨询时帮助企业满足这些条件，但前提条件是企业具有资质的焊接监督人员，如国际焊接工程师（ IWE），国际焊接技师（IWS）等。
2、焊接企业想请WTI 对企业进行（ISO3834、DIN18800、EN15085）认证咨询，需要做那些准备工作？答：企业应发出正式书面的传真介绍企业的相关信息，包括：企业名称，地址，产品介绍，所申请的认证，并留下联系人的电话/传真/电子邮箱等必要信息。
并且填写企业概况表和焊接接头汇总表。
启动认证咨询工作，必须要具备国际焊接工程师或国际焊接技师（依据不同企业认证级别）。
3、焊接企业想取得ISO3834认证，是否需要先取得ISO9000认证？答：对于此项没有强制要求，但是对于想取得ISO3834认证的企业必须满足其标准规定的要素，要有企业焊接质量体系文件。
4、焊接企业已经通过了ISO9000认证，那么该公司的焊接生产应满足什么条件？答：强调ISO3834不是替代ISO9001:2008质量管理体系，它是当ISO9001:2008应用在焊接制造时的十分有用的辅助体系，它也遵守ISO 9000：2008质量管理体系——基础及术语。
13003三极管参数，中文资料
13003三极管参数，中文资料13003三极管在整流器，充电器中很常用，对于了解13003三极管参数也显得很必要，下面为大家提供13003三极管的常用参数及应用电路图。
13003NPN型硅晶体管、功率开关三极管 主要应用于:日光灯、电子镇流器、充电器、等高压功率开关电路。
13003产品特性:芯片面积：1.63×1.63（特制芯片）额定电流：1.5 A（加大电流品种）饱和压降低、热性能好反向击穿电压高、漏电流小N型硅单晶三重扩散平面工艺制作 <<提示： 你觉得本站资料对你有帮助，请将网页加入浏览器收藏夹中，方便以后点击直接访问。
欢迎大家为容源电子网提供技术资料。
》温馨提示：将鼠标指针放在图片上，滚动鼠标可以动态改变图片大小，方便分析电路 型号与封装识别对照:HI13003: TO-251 (直插封装)HJ13003: TO-252 (贴片封装)HMJE13003T: TO-126 (半塑封)HMJE13003D: TO-126ML (全塑封)HMJE13003E: TO-220 (半塑封)你觉得本站资料对你有帮助，请将网页加入浏览器收藏夹中，方便以后点击直接访问。
欢迎大家为容源电子网提供技术资料。
》13003最大额定值温馨提示：将鼠标指针放在图片上，滚动鼠标可以动态改变图片大小，方便分析电路图。
<<提示： 你觉得本站资料对你有帮助，请将网页加入浏览器收藏夹中，方便以后点击直接访问。
欢迎大家为容源电子网提供技术资料。
》13003三极管应用电路图：>> 转载请注明出处并保留链接。
编辑：admin 时间：2014-1TAG标签： 整流器 三极管 芯片 高压 晶体管 镇流器 电路图 555 充电 制作【 复制本文地址及标题 】 【 在本地打印该网页 】 【 我要发表文章 】 【 返回上一页】分享到： QQ空间 新浪微博 开心网 人人网 更多...·上一篇： 应用交流接触器实现逆变器和市电自动切换·下一篇： 格力牌FGW-12远红外电暖器使用注意事项。
J-STD-033B(中文版)资料
J-STD-033B(中文版)资料编辑整理：尊敬的读者朋友们：这里是精品文档编辑中心，本文档内容是由我和我的同事精心编辑整理后发布的，发布之前我们对文中内容进行仔细校对，但是难免会有疏漏的地方，但是任然希望（J-STD-033B(中文版)资料）的内容能够给您的工作和学习带来便利。
同时也真诚的希望收到您的建议和反馈，这将是我们进步的源泉，前进的动力。
本文可编辑可修改，如果觉得对您有帮助请收藏以便随时查阅，最后祝您生活愉快业绩进步，以下为J-STD-033B(中文版)资料的全部内容。
SMD温湿度敏感元件作业，运输，储存，包装标准1.前言SMD零件的出现直接带来了新的挑战,而这些挑战的重心又在于包装的品质和可靠性.本文讲述了floor life 在作业,包装，运输，的等级标准。
J—STD-020说明了湿敏元件级别,JEP113说明了标签要求周围环境中的湿气会通过包装材料渗透到包装内部，并在不同材料的表面聚结。
在组装工艺中，SMD元件贴装在PCB上时会经历超过200℃,在焊接时,湿气的膨胀会造成一些列的焊接品质问题。
2.目的本文旨在为使用,运输,存储，包装SMD湿敏元件提供标准。
通过本文内的方法,可以避免零件受潮和零件在过IR后可靠性下降。
通过本文的各个程序，可以达到无害回焊。
热烘可以使SMD零件得到长达12个月的包装存储寿命。
3.范围3。
1 包装3.1.1 本标准适用于PCBA中无需密封SMD零件的作业，其中包括聚合分子材料和塑胶材料3.1。
2 密封包装大零件无湿气风险，不必作防潮3.2 组装制程3.2。
1本标准适用于PCBA IR，VPR等制程，不适用于波峰焊3.2.2 本标准亦适用于受潮零件的烘烤或重工3。
2.3 本标准不适用于不过回焊炉的零件3。
3 可靠性3.3。
1 内容描述中的方法可以保证PCBA的成品可靠性是可评估的（标准 J-STD-020 和JESD22—A113）3.3。
2 本文不对焊接可靠性作评述4. 涉及文件4。
13003 MJE13003D 载带卷盘 - MOS-场效应管、晶体管
额定值 VALUE
850 500 9.0 1.0 2.0 2.0 4.0 1.0 150 -65~+150
单位 UNIT
V
A
W ℃
HAOHAI ELECTRONICS CO., LTD.
第1页 共5页 致力於中國功率器件優秀供應商
kkg@ 13003H: TO-251_TO-252
第2页 共5页 致力於中國功率器件優秀供應商
kkg@ 13003H: TO-251_TO-252
2A, 850V 特制高压 开关三极管 产品参数规格书
SOA(CD)
H13003H
High Voltage Switching Transister
Ptotoc Tj
hFE - IC
最小值 MIN
最大值 MAX
单位 UNIT
100 μA250来自8505009 V
0.5
1.2
1.0
7
20
35
4
■ 订单信息 ORDERING INFORMATION:
包装方式 PACKING
TO-251 普通袋装 NORMAL PACKING TO-251 条管装 NORMAL PACKING TO-252 条管装 NORMAL PACKING
IC=10mA, IE=0
VEBO
发射极-基极电压 Emitter- Base Voltage
IE=1mA, IC=0
Vcesat Vbesat
集电极-发射极饱和电压 Collector-Emitter Saturation Voltage
发射极-基极饱和电压 Base-Emitter Saturation Voltage
E-mail:kkg@
ST13003-K规格书
This is information on a product in full production.June 2013DocID13533 Rev 51/10ST13003, ST13003-KHigh voltage fast-switching NPN power transistorDatasheet - production dataFeatures•High voltage capability•Low spread of dynamic parameters •Very high switching speedApplications•Electronic ballast for fluorescent lighting (CFL)•SMPS for battery chargerDescriptionThe device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.Table 1. Device summaryPart number Marking Package Packaging ST1300313003SOT-32Tube ST13003-K13003SOT-32BagElectrical ratings ST13003, ST13003-K2/10DocID13533 Rev 51 Electrical ratingsTable 2. Absolute maximum ratingsSymbol ParameterValue Unit V CES Collector-emitter voltage (V BE = 0)700V V CEO Collector-emitter voltage (I B = 0)400V V EBO Emitter-base voltage (I C = 0, I B = 0.75 A, t P < 10 μs)V (BR)EBOV I C Collector current1.5A I CM Collector peak current (t P < 5 ms)3A I B Base current0.75A I BM Base peak current (t P < 5 ms) 1.5A P TOT Total dissipation at T C = 25 °C 40W T STG Storage temperature-55 to 150°C T JOperating junction temperature-40 to 150°CTable 3. Thermal dataSymbol ParameterValue Unit R thJCThermal resistance junction-case max.3.1°C/WDocID13533 Rev 53/10ST13003, ST13003-K Electrical characteristics2 Electrical characteristicsT case = 25 °C unless otherwise specified.Table 4. Electrical characteristicsSymbol ParameterTest conditions Min.Typ.Max.Unit I CES Collector cut-off current(V BE = 0)V CE = 700 VV CE = 700 V T C = 125 °C15mA mA V (BR)EBO Emitter-Base breakdownvoltage (I C = 0)I E = 10 mA918V V CEO(sus) (1)1.Pulsed duration = 300 μs, duty cycle ≤ 1.5%Collector-emittersustaining voltage (I B = 0)I C = 10 mA400V V CE(sat) (1)Collector-emitter saturation voltage I C = 0.5 A I B = 0.1 A I C = 1 A I B = 0.25 A I C = 1.5 A I B = 0.5 A 0.511.5V V V V BE(sat) (1)Base-emitter saturation voltage I C = 0.5 A I B = 0.1 A I C = 1 A I B = 0.25 A 11.2V Vh FEDC current gain I C = 0.5 A V CE = 2 V I C = 1 A V CE = 2 V 852025t r t s t fResistive load Rise time Storage time Fall time V CC = 125 V I C = 1 A I B1 = 0.2 A I B2 = - 0.2 A t p = 25 μs140.7μs μs μst sInductive load Storage timeI C = 1 A I B1 = 0.2 A V BE = - 5 V L = 50 mH V Clamp = 300 V0.8μsElectrical characteristics ST13003, ST13003-K4/10DocID13533 Rev 52.1 Electrical characteristics (curves)Figure 4. Output characteristicsFigure 5. Reverse biased safe operatingST13003, ST13003-K Electrical characteristics Figure 8. Collector-emitter saturationFigure 9. Base-emitter saturation voltageDocID13533 Rev 55/10Electrical characteristics ST13003, ST13003-K6/10DocID13533 Rev 52.2 Test circuits1.Fast electronic switch2.Non-inductive resistor1.Fast electronic switch2.Non-inductive resistor3.Fast recovery rectifierST13003, ST13003-K Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: .ECOPACK® is an ST trademark.DocID13533 Rev 57/10Package mechanical data ST13003, ST13003-KTable 5. SOT-32 (TO-126) mechanical datamm.Dim.Min.Typ.Max.A 2.4 2.9B0.640.88B10.390.63D10.511.05E7.47.8e 2.04 2.29 2.54e1 4.07 4.58 5.08L15.316P 2.9 3.2Q 3.8Q11 1.52H2 2.15I 1.278/10DocID13533 Rev 5ST13003, ST13003-K Revision historyhistory4 RevisionTable 6. Document revision historyDate Revision Changes23-May-20071Initial release.09-Jul-20082Added Table1 on page1.15-Dec-20093Added Table3: Thermal data on page2.15-Jun-20114Modified: Table218-Jun-20135Added device ST13003.DocID13533 Rev 59/10ST13003, ST13003-KPlease Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2013 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America10/10DocID13533 Rev 5。
MA4ST1330中文资料
Equivalent PartsLow Voltage/Low Rs Silicon HyperabruptVaractor DiodeMA4ST1300 SeriesFeatures• Low Series Resistance at Low Tuning Voltages• High Capacitance Ratio at Low Tuning Voltages• Surface Mount Plastic Packages : SC-79 , SOD-323, SC-70 ( 3L ) (other packages & configura-tions available)• SPC Process for Superior C vs V Repeatability• Lead-Free (RoHs Compliant) equivalents avail-able with 260°C reflow compatibility.Description and ApplicationsM/A-COM’s MA4ST1300 series is a highly repeatable, UHCVD/ion-implanted, hyperabrupt silicon tuning varactor in a cost effective surface mount package. This series of varactors is designed for high capacitance ratio, and high Q for low battery voltage operation. It is efficient for wide band tuning and low phase noise application where the supply voltage is limited to 5 volts or less. The varactors are offered as singles in SC-79 and SOD-323 along with a common cathode version offered in the SC-70, 3 Lead. These diodes are offered with standard Sn/Pb plating , as well as 100% matte Sn plating on our RoHs compliant equivalent devices. Absolute Maximum Ratings @ T A=+25 °C (Unless Otherwise Noted) 11. Operation of this device above any one of these parametersmay cause permanent damage.2. Please refer to application note M538 for surface mountinginstructionsParameter Absolute Maximum Reverse Voltage 12 VForward Current 50 mAOperating Temperature -55 °C to +125 °CStorage Temperature -55 °C to +125 °CSOD-323 SC-70 (3 lead)SC-79Part Number RoHs Compliant Part Number Configuration Package Package Cp(pF) Package Ls(nH)MAVR-001320-12790TSingleSC-790.10 0.6MAVR-001330-12790TSingleSC-790.10 0.6MAVR-001340-12790TSingleSC-790.10 0.6MAVR-001350-12790TSingleSC-790.10 0.6 MA4ST1320-1141T MAVR-001320-11410T Single SOD-323 0.11 1.2MA4ST1330-1141T MAVR-001330-11410T Single SOD-323 0.11 1.2MA4ST1340-1141T MAVR-001340-11410T Single SOD-323 0.11 1.2MA4ST1350-1141T MAVR-001350-11410T Single SOD-323 0.11 1.2MA4ST1320CK-1146T MAVR-001320-1146FT Common Cathode SC-70 (3L) 0.12 1.3MA4ST1330CK-1146T MAVR-001330-1146FT Common Cathode SC-70 (3L) 0.12 1.3MA4ST1340CK-1146T MAVR-001340-1146FT Common Cathode SC-70 (3L) 0.12 1.3MA4ST1350CK-1146T MAVR-001350-1146FT Common Cathode SC-70 (3L) 0.12 1.3Equivalent PartsLow Voltage/Low Rs Silicon Hyperabrupt Varactor DiodeV3MA4ST1300 SeriesElectrical Specifications @ T A = +25 °CBreakdown Voltage @ I R = 10µA, V b = 12 V MinimumReverse Leakage Current @ V R =10V, I R = 100 nA Maximum1The prefix defines package style, configuration and packaging information. Contact representative for complete part identification. 2Capacitance @ 1 MHz 3Series Resistance @ 100 MHzTypical Capacitance vs. Biasing Voltage3Part NumberBaseCt (pF)2CapacitanceRatioRs 3 (Ohm)V R = 0.5VV R = 4.0V Ct 0.5/Ct 3.0V R = 2.0 V Min.Nom. Max. Typ. Typ. Typ. Max. MA4ST1320 MAVR-001320-XXXXXX 48.0 55.0 63.0 17.0 3.37 0.32 0.5 MA4ST1330 MAVR-001330-XXXXXX 22.0 25.0 30.0 7.8 3.31 0.45 0.7 MA4ST1340 MAVR-001340-XXXXXX 15.0 18.0 21.0 5.2 3.4 0.57 0.85 MA4ST1350MAVR-001350-XXXXXX9.511.013.53.63.20.781.0RoHs Compliant Part Number Base 1010203040506012345Biasing Voltage (V)C a p a c i t a n c e (p F )MA4ST1320/ MAVR-001320MA4ST1330/MAVR-001330MA4ST1340/ MAVR-001340MA4ST1350/MAVR-001350Typical Capacitance Change vs. Temperature-4%-2%0%2%4%-40-1510356085Temperature (degree C)% o f C a p a c i t a n c e C h a n g e (r e l a t i v e t o 25 C )0.000.100.200.300.400.500.600.700.800.900.01.02.03.04.0Biasing Voltage (V)S e r i e s R e s i s t a n c e (O h m )MA4ST1350 / MAVR-001350MA4ST1320 / MAVR-001320 MA4ST1330 / MAVR-001330MA4ST1340 / MAVR-001340Equivalent PartsLow Voltage/Low Rs Silicon HyperabruptVaractor Diode V3MA4ST1300 Series Typical Capacitance ValuesSpice ModelCpRsCjLsIntrinsic Diode ModelN=NCj0=Cj0Vj=VjFc=0.5BV=20 VM=MParasitic Cp & LsAre per Above TableV R (V)MA4ST1320MAVR-001320MA4ST1330MAVR-001330Ct (pF) Ct (pF)0.5 55.45 25.41.0 45.0 20.71.5 36.3 16.82.0 28.3 13.22.5 21.2 10.13.0 16.4 7.93.5 13.3 6.44.0 11.45.54.5 10.0 4.85.0 9.1 4.4MA4ST1340MAVR-001340MA4ST1350MAVR-001350Ct (pF) Ct (pF)17.7 11.414.4 9.311.7 7.69.2 5.97.0 4.55.4 3.44.4 2.93.8 2.53.3 2.23.0 2.0Part Number N CJO(pF)Vj(V)MMA4ST1320MAVR-0013201.1 71.5 20.35 13.21MA4ST1330MAVR-0013301.1 32.8 20.91 13.72MA4ST1340MAVR-0013401.1 22.7 22.32 14.72MA4ST1350MAVR-0013501.1 14.3 25.52 15.87Equivalent PartsLow Voltage/Low Rs Silicon Hyperabrupt Varactor DiodeV3MA4ST1300 SeriesCase Styles SC-70, 3 Lead Case Style 1146INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A 0.071 0.087 1.80 2.20 B0.045 0.053 1.15 1.35 C 0.071 0.094 1.80 2.40 D 0.047 0.057 1.19 1.45 E 0.010 0.016 0.25 0.41 F 0.031 0.039 0.80 1.00 G 0.000 0.004 0.00 0.10 H 0.004 0.10 J0.0040.100.007 0.0100.18 0.25SOD-323Case Style 1141INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A ⎯ 0.043 ⎯ 1.1 B ⎯ 0.004 ⎯ 0.1 C ⎯ 0.008 ⎯ 0.2 D 0.010 0.016 0.25 0.4 E 0.003 0.006 0.08 0.15 F 0.063 0.075 1.6 1.9 G 0.045 0.057 1.15 1.45 H0.0910.1062.32.7FDHGCEABA EDHGF10°A X.C BSC-79Case Style 1279INCHES MILLIMETERS DIM.MIN. MAX.MIN. MAX.A 0.020 0.028 0.50 0.71B 0.003 0.008 0.08 0.20C 0.006 0.010 0.15 0.25D 0.010 0.014 0.25 0.36E 0.059 0.067 0.08 0.15F 0.043 0.051 1.50 1.30G 0.011 0.0120.28 0.30H0.037 typical0.043 0.941.09DEF Cathode MarkBCSeating Plane10° MaxA10° MaxGHTopviewEquivalent PartsLow Voltage/Low Rs Silicon Hyperabrupt Varactor DiodeV3MA4ST1300 SeriesMounting InformationThe illustration indicates the recommended mounting pad configuration for the SC-79, SOT-323 and SOD-323 packages. Solder paste containing flux should be screened onto the pads to a thickness of 0.005- 0.007 inches. The plastic package is placed in position, firmly adhering to the solder paste.Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed +275 °C and the body temperature does not exceed +250 °C, for standard models and +260 °C for the RoHS compliant devices.Please refer to Application Note M538 for surface mounting instructions.SOT-3230.0300.800.0300.800.0300.800.0751.90.0300.80inchesDimenstions:SOD-3230.0300.80.0902.20.0300.80inchesm mDim enstions:0.0300.80SC-790.020 0.500.053 1.35inchesm mD im enstions:0.020 0.50。
UL1310中文版
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装配 5 机械集成
5.1 设备应组合和集成使它有足够力度及坚固来防止妄用，避免因空间缩少而做成完全或部份设备松
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3 组件 3.1 除了在第3.2 条列明外，本标准包含的产品组件应符合组件的要求。本标准包含的常用标准组件， 请参阅附录一。
3.2 一个组件不需符合特别规条若 a) 本标准包含的产品内，组件含不需要使用的特性或特征。 b) 该规条已在本标准被取代。
3.3 组件应按照其建立于预期条件使用的。 3.4 制造功能不完全或受操作能力限制的组件被指定为特别组件。这类别的组件只可用于限定条件之
SEPTEMBER 25,2001
CLASS 2 POWER UNITS-UL1310
2
目录
序文 1.范围 2.语汇 3.组件 4.总类 装配 5.机械集成 6.外壳 7.抗锈蚀 8.开关 9.保护装置 10.组件 11.线圈绝缘 12.输入连接 13.输出连接 14.带电零件的可触性 15.带电零件 16.消除应变 17.内部配线 18.电路分隔 19.绝缘材料 20.印制电路板 21.接地措施 22.空间设计 性能测试 23.一般要求 24.漏电测试 25.暴露在潮湿环境下的漏电测试及耐压测试 26.最大输出电压测试 27.最大输入测试 28.输出电流及电力测试 29.防过载装置的校准测试 30.全载输出电流测试 31.正常温度测试 32.耐压测试 33.防过热和过载保护装置的耐久力测试 34.重复耐压测试 35.开关及操控装置的负载及耐久力测试 36.次级开关的过载测试 37.工作测试 38.不正常测试 39.绝缘材料测试 40.消除应变测试 40A.后推力消除测试 41.直接插入铜脚固定测试
三汇示波器说明书(Ver1.0)
DST4000 和 DST1000 系列数字存储示波器用户手册
i
目录
5.1 显示区 ........................................................................................ 20 5.2 信息区域..................................................................................... 23 5.3 波形显示..................................................................................... 23
三汇系列产品
DST4000 和 DST1000 系列 数字存储示波器
Version 1.0
杭州三汇科技有限公司 www.
目录
目录
目 录 ...........................................................................................................i 版权申明 .......................................................................................................................................................................v 第 1 章 安全事项......................................................................................... 1
TCST1103;TCST1300;中文规格书,Datasheet资料
Transmissive Optical Sensor with Phototransistor OutputDESCRIPTIONThe TCST1103, TCST1202, and TCST1300 are transmissive sensors that include an infrared emitter and phototransistor,located face-to-face on the optical axes in a leaded package which blocks visible light. These part numbers include options for aperture width.FEATURES•Package type: leaded •Detector type: phototransistor•Dimensions (L x W x H in mm): 11.9 x 6.3 x 10.8•Gap (in mm): 3.1•Typical output current under test: I C = 4 mA (TCST1103)•Typical output current under test: I C = 2 mA (TCST1202)•Typical output current under test: I C = 0.5 mA (TCST1300)•Daylight blocking filter •Emitter wavelength: 950 nm •Lead (Pb)-free soldering released•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/ECAPPLICATIONS•Optical switch •Photo interrupter •Counter •EncoderNote•Conditions like in table basic characteristics/couplerNote•MOQ: minimum order quantity19180_5PRODUCT SUMMARYPART NUMBER GAP WIDTH(mm)APERTURE WIDTH(mm)TYPICAL OUTPUT CURRENTUNDER TEST (1)(mA)DAYLIGHT BLOCKING FILTER INTEGRATEDTCST1103 3.114Yes TCST1202 3.10.52Yes TCST13003.10.250.5YesORDERING INFORMATIONORDERING CODE PACKAGINGVOLUME (1)REMARKS TCST1103Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange TCST1202Tube MOQ: 1020 pcs, 85 pcs/tube Without mounting flange TCST1300TubeMOQ: 1020 pcs, 85 pcs/tubeWithout mounting flangeABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLVALUEUNITCOUPLERTotal power dissipation T amb ≤ 25 °CP tot 250mW Ambient temperature range T amb - 55 to + 85°C Storage temperature range T stg - 55 to + 100°C Soldering temperatureDistance to package: 2 mm; t ≤ 5 sT sd260°CABSOLUTE MAXIMUM RATINGSFig. 1 - Power Dissipation Limit vs. Ambient TemperatureINPUT (EMITTER)Reverse voltage V R 6V Forward current I F60mA Forward surge current t p ≤ 10 μs I FSM 3A Power dissipation T amb ≤ 25 °CP V 100mW Junction temperature T j 100°C OUTPUT (DETECTOR)Collector emitter voltage V CEO 70V Emitter collector voltage V ECO7V Collector peak current t p /T = 0.5, t p ≤ 10 msI CM 200mA Power dissipation T amb ≤ 25 °CP V 150mW Junction temperatureT j100°CABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLVALUE UNIT BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONPARTSYMBOLMIN.TYP.MAX.UNITCOUPLERCurrent transfer ratioV CE = 5 V, I F = 20 mATCST1103CTR 1020%TCST1202CTR 510%TCST1300CTR 1.25 2.5%Collector currentV CE = 5 V, I F = 20 mA TCST1103I C 24mA TCST1202I C 12mA TCST1300I C 0.250.5mA Collector emitter saturationvoltageI F = 20 mA, I C = 1 mA TCST1103V CEsat 0.4V I F = 20 mA, I C = 0.5 mA TCST1202V CEsat 0.4V I F = 20 mA, I C = 0.1 mA TCST1300V CEsat 0.4V Resolution, path of the shutter crossing the radiant sensitive zoneI Crel = 10 % to 90 %TCST1103s 0.6mm TCST1202s 0.4mm TCST1300s0.2mmFig. 2 - Test Circuit for t on and t offFig. 3 - Switching TimesBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Relative Current Transfer Ratio vs. Ambient TemperatureINPUT (EMITTER)Forward voltage I F = 60 mA V F 1.25 1.6V Junction capacitance V R = 0 V, f = 1 MHzC j50pFOUTPUT (DETECTOR)Collector emitter voltage I C = 1 mA V CEO 70V Emitter collector voltage I E = 10 μAV ECO 7V Collector dark currentV CE = 25 V, I F = 0 A, E = 0 lxI CEO100nASWITCHING CHARACTERISTICS Turn-on time I C = 2 mA, V S = 5 V,R L = 100 Ω (see figure 2)t on 10μs Turn-off timeI C = 2 mA, V S = 5 V,R L = 100 Ω (see figure 2)t off8μsBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONPARTSYMBOLMIN.TYP.MAX.UNIT10 %90 %100 %I F I C t p Pulse duration t d Delay time t rRise time t on (= t d + t r )Turn-on timet s Storage time t fFall time t off (= t s+ t f )Turn-off time96 11698Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 7 - Collector Current vs. Forward CurrentFig. 8 - Collector Current vs. Collector Emitter VoltageFig. 9 - Current Transfer Ratio vs. Forward Current Fig. 10 - Turn-off/Turn-on Time vs. Collector Current Fig. 11 - Relative Collector Current vs. DisplacementFig. 12 - Relative Collector Current vs. Displacement Fig. 13 - Relative Collector Current vs. DisplacementPACKAGE DIMENSIONS in millimetersTUBE DIMENSIONS in millimetersDocument Number: 80112For technical questions, contact: optocoupleranswers@Packaging and Ordering InformationPackaging and Ordering InformationVishay SemiconductorsNotes(1)MOQ: minimum order quantity (2)Please refer to datasheetsTUBE SPECIFICATION FIGURESFig. 1PART NUMBER MOQ (1)PCS PER TUBETUBE SPEC.(FIGURE)CONSTITUENTS(FORMS)CNY70400080128TCPT1300X012000Reel (2)29TCRT10001000Bulk -26TCRT10101000Bulk -26TCRT5000450050227TCRT5000L 240048327TCST1030520065524TCST1030L 260065624TCST1103102085424TCST1202102085424TCST1230480060724TCST1300102085424TCST2103102085424TCST2202102085424TCST2300102085424TCST5250486030824TCUT1300X012000Reel (2)29TCZT8020-PAER2500Bulk-22Packaging and Ordering InformationVishay Semiconductors Packaging and Ordering InformationFig. 2Fig. 3 For technical questions, contact: optocoupleranswers@ Document Number: 80112Packaging and Ordering InformationPackaging and Ordering Information Vishay SemiconductorsFig. 4Fig. 5Document Number: 80112For technical questions, contact: optocoupleranswers@ Packaging and Ordering InformationVishay Semiconductors Packaging and Ordering InformationFig. 6Fig. 7 For technical questions, contact: optocoupleranswers@ Document Number: 80112分销商库存信息:VISHAYTCST1103TCST1300。
出口商品技术指南——微波炉说明书
出口商品技术指南微波炉中华人民共和国商务部2021年11月前言2020年新冠肺炎疫情来袭，在疫情的影响之下，全球经济由疲软转向衰退的风险明显上升，供给侧和需求侧同时面临萎缩，贸易陷于停滞状态，加上地缘政治冲突升级、全球贸易摩擦不确定性风险犹存等因素，中国家用电器行业出口受到了一定冲击。
然而，“少聚会、少聚餐”的倡议让全球人们与吃有关的生活习惯发生了巨大的变化。
对于与人们生活紧密相关的厨房电器——微波炉而言，新冠肺炎疫情给之带来一波新的出口行情，自2020年起出口额逆势上扬，大幅增长。
据海关总署统计数据显示，2020年中国微波炉出口量为6741.28万台，较2019年增加了760.84万台。
2020年中国微波炉出口金额为323722.50万美元，较2019年增加了33574.74 万美元。
近年来国际经济贸易形势不断发生着复杂而深刻的变化。
虽然受到国际金融危机以及全球经济增速放缓等因素影响，我国家电产品的出口额总体上还是处于上升趋势。
中国是全球微波炉需求量的出口大国，在新的国际市场环境及经济贸易形势下，为了便于出口家电企业更充分地了解国际上各种技术性贸易措施产生背景和表现形式，以及有关家电产品标准的变化情况，在商务部发布的《出口商品技术指南——微波炉》（2014年版）的基础上，中国家用电器研究院再次受商务部委托，根据2014年以后出口家电市场面临的各种新的技术性贸易措施以及主要出口国家和地区产品技术标准的演变情况，进行了修订。
本次修订涉及的内容包括：1）对近十年出口微波炉市场的情况和数据进行了系统汇总统计，同时对各大洲以及重点国家的出口情况进行了分析说明；2）更新了我国微波炉安全标准与最新版IEC标准的技术差异比对和解读；3）更新了我国微波炉性能测试方法标准与最新版IEC标准的技术差异比对和解读；4）更新了我国安全标准与日本安全标准的技术差异的比对和解读，并对2014年实施的全新修订的日本电气用品安全法进行了分析说明；5）增加了我国安全标准与美国标准的技术差异的比对和解读；6）更新了欧盟RoHS指令对于家用电器产品中有害物质的豁免清单；7）增加了对一带一路沿线国家和地区技术壁垒近期对策的思考；8）增加了最新版IEC标准的译文：IEC 60335-2-25:2020家用和类似用途电器的安全微波炉，包括组合型微波炉的特殊要求；9）更新了我国微波炉性能测试方法标准的内容：GB/T 18800-2017 家用微波炉性能试验方法。
D13003H中文资料
HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTER Application2005.021/6Electrical charactristics(Tc=25℃)Item Symbol Testing term Min Max UnitsCollector-emitter breakdown voltage V(BR)CEO Ic=10mA,I B=0400 VCollector-base breakdown voltage V(BR)CBO Ic=1mA,I B=0600 VEmitter-base breakdown voltage V(BR)EBO I E=1mA,Ic=09 VCollector-base Cutoff current I CBO V CB=580V, I E=05 μACollector-emitter Cutoff current I CEO V CE=390V,I B=010 μAEmitter-base Cutoff current I EBO V EB=7V, I C=05 μADC current gain hFE V CE=10V, I C=100mA 8 40Collector-emitter Saturation voltage V CE(sat)(1)I C=0.5A, I B=0.1A0.8 VBase-emitter Saturation voltage V BE(sat)I C=0.5A, I B=0.1A1.2 VFall time t f V CC=24V I C=0.25A,I B1=-I B2=0.05A0.7μSStorage time ts V CC=24V I C=0.25A,I B1=-I B2=0.05A4μSTransition frequency f T V CE=10V, Ic=0.1A 4 - MHzThermal charactristicsItem Symbol Min Max UnitsThermal resistance Junction to case R th(j-c)6.25℃/W2005.022/6Typical characteristics:Base-emitter saturation voltage2005.023/62005.024/6NOTES1. Jilin Sino-microelectronics co., Ltd sales its product either through direct sales or salesagent , thus, for customers, when ordering , please check with our company.2. We strongly recommend customers check carefully on the trademark when buying ourproduct, if there is any question, please don’t be hesitate to contact us.3. Please do not exceed the absolute maximum ratings of the device when circuitdesigning.4. Please do not exceed the absolute maximum ratings of the device when circuitdesigning.5. Jilin Sino-microelectronics co, Ltd reserves the right to make changes in thisspecification sheet and is subject to change without prior notice.CONTACTJilin Sino-Microelectronics Co.,LtdAdd：No.99 Shenzhen Street,Jilin City Jilin Province ChinaZip：132013Tel：86－432－4678411Fax：（0432）4665812Web：Marking DepartmentJilin City:Add：No.99 Shenzhen Street,Jilin City Jilin Provine ChinaTel: （0432）4675588 4675688 (0432)4678411-3098＼3099Fax: （0432）46715332005.025/6。
CDT13003F中文资料
NPN SILICON POWER TRANSISTORCDT13003 TO-220Plastic PackageApplicationsSuitable for Lighting, Switching Regulator and Motor ControlABSOLUTE MAXIMUM RATINGS DESCRIPTIONSYMBOL Collector Base Voltage V CBOCollector Emitter (sus) Voltage V CEO Emitter Base VoltageV EBO Collector Current Continuous I C Peak (1)I CM Base Current Continuous I B Peak (1)I BM Emitter Current ContinuousI E Peak (1)I EM Power Dissipation @ T a =25 ºC P DDerate Above 25ºCPower Dissipation @ T c=25 ºC P D Derate Above 25ºCOperating And Storage Junction Temperature Range T j, T stgTHERMAL RESISTANCE Junction to Case R th (j-c)Junction to AmbientR th (j-a)Maximum Lead Temperature for Soldering Purpose: 1/8" from Case for 5 Seconds(1) Pulse Test: Pulse Width=5ms, Duty Cycle=10%ELECTRICAL CHARACTERISTICS (T a =25ºC unless specified otherwise)DESCRIPTIONSYMBOL TEST CONDITIONMIN TYP MAX UNIT Collector Base Voltage V CBO I C =1mA, I E =0600--V Collector Emitter (sus) Voltage *V CEO(sus)I C =10mA, I B =0400--V Collector Cut Off Current I CBO V CB =600V , I E =0-- 1.0mA V CB =600V , I E =0, T c =100ºC5.0mA Emitter Cut Off CurrentI EBOV EB =9V, I C =0--1.0mA*Pulse Test:- PW=300µs, Duty Cycle=2%CDT13003Rev_1 230306D275ºCT LUNIT V V V A A A W A A A ºCºC/W ºC/W VALUE 6004009.01.83.50.751.5 - 65 to+1502.08892.254.51.411.2mW/ ºC W mW/ ºC 50480Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON POWER TRANSISTORCDT13003 TO-220Plastic PackageELECTRICAL CHARACTERISTICS (T a =25ºC unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITDC Current Gain*h FE **I C =0.5A, V CE =5V 11 - 30I C =1.5A, V CE =5V4-25Collector Emitter Saturation Voltage*V CE (sat)I C =0.5A, I B =0.1A --0.5V I C =1A, I B =0.25A -- 1.0V I C =1.5A, I B =0.5A -- 2.5V I C =1A, I B =0.25A,T c =100ºC-- 1.0V Base Emitter Saturation Voltage*V BE (sat)I C =0.5A, I B =0.1A -- 1.0V I C =1A, I B =0.25A -- 1.2V I C =1A, I B =0.25A,T c =100ºC-- 1.1V DYNAMIC CHARACTERISTICS DESCRIPTIONSYMBOLTEST CONDITION MIN TYP MAX UNIT Current Gain Bandwidth Product f T I C =100mA, V CE =10V,f=1MHz4.0--MHz Output Capacitance C obV CB =10V, f=0.1MHz-21-pFSWITCHING TIME Turn On Time t on 1.1µs Storage Time t stg 4.0µs Fall Timet f0.7µs** h FE Classification:-Note:- Product is pre selected in DC current A B C E F gain (Groups A to F). CDIL reserves the right11-16 15-19 18-22 21-25 24-30to ship any of the groups according to production availability.MARKINGCDT CDT CDT CDT CDT 13003 13003 13003 13003 13003 A XY B XY C XY E XY F XYX= Year of Manufacturer Code Y= Month Code*Pulse Test:- PW=300µs, Duty Cycle=2%CDT13003Rev_1 230306DV CC =125V, I C =1A, I B1=0.2A,I B2=0.2ACDT13003 TO-220Plastic PackageCDT13003Rev_1 230306DTO-220 Plastic PackageTO-220 Tube PackingTO-220 / FP200 pcs/polybag 50 pcs/tube 396 g m /200 pcs 120 gm /50 pcs3" x 7.5" x 7.5"3.5" x 3.7" x 21.5"1.0K 1.0K17" x 15" x 13.5"19" x 19" x 19"16.0K 10.0K36 k g s 29 k g sPACKAGENet Weight/Q t yDetailsSTANDARD PACKINNER CARTON BOXQ t y OUTER CARTON BOXQ t y G r W t SizeSizePacking DetailPin Configuration 1. Base 2. Collector 3. Emitter 4. CollectorComponent Disposal Instructions1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please dispose as per prevailing Environmental Legislation of their Country.CDT13003Rev_1 230306DCustomer NotesDisclaimerThe product information and the selection guides facilitate selection of the CDIL's Semiconductor Device(s)best suited for application in your product(s)as per your requirement.It is recommended that you completely review our Data Sheet(s)so as to confirm that the Device(s)meet functionality parameters for your application.The information furnished in the Data Sheet and on the CDIL Web Site/CD are believed to be accurate and reliable.CDIL however,does not assume responsibility for inaccuracies or incomplete information.Furthermore,CDIL does not assume liability whatsoever,arising out of the application or use of any CDIL product;neither does it convey any license under its patent rights nor rights of others.These products are not designed for use in life saving/support appliances or systems.CDILcustomerssellingtheseproducts(eitherasindividualSemiconductorDevicesorincorporatedintheirendproducts),in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark of Continental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 4141 1112 Fax + 91-11-2579 5290, 4141 1119email@ Continental Device India Limited Data Sheet Page 4 of 42. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and Electronic Equipment (WEEE).TO-220CDT13003Plastic Package元器件交易网。
SBN13003A中文资料
This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit.
元器件交易网
SemiWell Semiconductor
SBN13003A
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical 120ns@1.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 230mV@1.0A/0.25A) - Wide Reverse Bias S.O.A
SBN13003A
LC
f
IC
IB1
IB
VCE
D.U.T
RBB VBE(off)
VClamp
VCC
Resistive Load Switching Test Circuit RC
IC
IB1
VCE
IB
D.U.T
RBB
VCC
VBE(off)
5/6
元器件交易网
SBN13003A
Fig 6. Resistive Load Storage Time
10 ※ Notes : VCC = 125V hFE = 5 IB1 = - IB2
TJ = 25 oC
无源射频和微波元器件的互调电平测量 第6部分：天线的无源互调测量-最新国标
无源射频和微波元器件的互调电平测量第6部分：天线的无源互调测量1 范围本文件描述了测量天线（特别是应用于无线通信系统中）无源互调电平的推荐试验装置和程序。
本文件旨在定义天线在低互调应用时的质量一致性检验和验收检验方法。
2 规范性引用文件下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。
其中，注日期的引用文件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用于本文件。
IEC 60068-2-75 环境试验第2-75部分：试验方法试验Eh：锤击试验（Environmental testing—Part 2-75: Tests—Test Eh: Hammer tests）注：G B/T 2423.55—2023 环境试验第2部分：试验方法试验Eh：锤击试验（IEC 60068-2-75:2014，IDT）IEC 62037-1 无源射频和微波元器件，互调电平测量第1部分：一般要求和测量方法（Passive RF and microwave devices, intermodulation level measurement—Part 1: General requirements and measuring methods）注：G B/T 21021.1—2021 无源射频和微波元器件的互调电平测量第1部分：一般要求和测量方法(IEC 62037-1:2012，IDT)IEC 62037-3 无源射频和微波元器件，互调电平测量第3部分：同轴连接器的无源互调测量（Passive RF and microwave devices, intermodulation level measurement—Part 3:Measurement of passive intermodulation in coaxial connectors）注：G B/T 21021.3—2021 无源射频和微波元器件的互调电平测量第3部分：同轴连接器的无源互调测量(IEC 62037-3:2012，IDT)ISO 2039-2 塑料硬度测定第2部分：洛氏硬度（Plastics—Determination of Hardness—Part 2: Rockwell Hardness）注：G B/T 3398.2—2008 塑料硬度测定第2部分：洛氏硬度（ISO 2039-2:1987，IDT）3 术语和定义4本文件没有需要界定的术语和定义。
ST13003中文资料
ST13003HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORs MEDIUM VOLTAGE CAPABILITYs LOW SPREAD OF DYNAMIC PARAMETERS sMINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONsVERY HIGH SWITCHING SPEEDAPPLICATIONS:s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIESDESCRIPTIONThe device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.The device is designed for use in lighting applications and low cost switch-mode power supplies.®INTERNAL SCHEMATIC DIAGRAMJune 2000ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V CES Collector-Emitter Voltage (V BE =0)700V V CEO Collector-Emitter Voltage (I B =0)400V V EBO Emitter-Base Voltage(I C =0,I B =0.75A,t p <10µs,T j <150o C)BV EBO V I C Collector Current1.5A I CM Collector Peak Current (t p <5ms)3A I B Base Current0.75A I BM Base Peak Current (t p <5ms) 1.5A P t ot Total Dissipation at T c =25oC 40WT stgStorage Temperature-65to 150oC321SOT-321/7THERMAL DATAR t hj-ca se R t hj-amb Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient Max3.1289o C/Wo C/WELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)Symbol Parameter Test Conditions Min.Typ.Max.UnitI CEV Collector Cut-offCurrent(V BE=-1.5V)V CE=700VV CE=700V T j=125o C15mAmABV EBO Emitter-BaseBreakdown Voltage(I C=0)I E=10mA918VV CEO(sus)∗Collector-EmitterSustaining Voltage(I B=0)I C=10mAL=25mH400VV CE(sat)∗Collector-EmitterSaturation Voltage I C=0.5A I B=0.1AI C=1A I B=0.25AI C=1.5A I B=0.5A0.513VVVV BE(s at)∗Base-EmitterSaturation Voltage I C=0.5A I B=0.1AI C=1A I B=0.25A1.01.2VVh FE DC Current Gain I C=0.5A V CE=2VGroup AGroup BI C=1A V CE=2V8155203525t r t s t f RESISTIVE LOADRise TimeStorage TimeFall TimeI C=1A V CC=125VI B1=0.2A I B2=-0.2AT p=25µs1.04.00.7µsµsµst s INDUCTIVE LOADStorage TimeI C=1A I B1=0.2AV BE=-5V L=50mHV c la mp=300V0.8µs∗ Pulsed:Pulse duration=300µs,duty cycle=1.5%Note:Product is pre-selec ted in DC current gain(GROUP A and GROUP B).STMicroelectronics reserves the right to ship either groups according to production availability.Please contact your nearest STMicroelectronics sales office for delivery details.ST130032/7Safe Operating AreasDC Current GainCollector Emitter Saturation Voltage Derating CurveDC Current GainBase Emitter Saturation VoltageST130033/7ST13003Inductive Fall Time Inductive Storage Time Reverse Biased SOA4/7ST13003 Figure1:Inductive Load Switching Test Circuits.Figure2:Resistive Load Switching Test Circuits.5/7DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 7.47.80.2910.307B 10.510.80.4130.445b 0.70.90.0280.035b10.490.750.0190.030C 2.4 2.70.0400.106c1 1.0 1.30.0390.050D 15.416.00.6060.629e 2.20.087e3 4.154.650.1630.183F 3.80.150G 3 3.20.1180.126H2.540.100c1H20016114SOT-32(TO-126)MECHANICAL DATAST130036/7ST13003Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©2000STMicroelectronics–Printed in Italy–All Rights Reserve dSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-China-Finland-France-Germany-Hong Kong-India-Italy-Japan-Malaysia-Malta-Morocco-Singapore-Spain-Sweden-Switzerland-United Kingdom-U.S.A.7/7。
大众汽车股份有限公司机动车高压组件的电气性能和电气安全
大众汽车股份有限公司机动车高压组件的电气性能和电气安全-要求和测试参与公司：奥迪公司宝马公司戴姆勒公司Dr. Ing. h. c. F. 保时捷公司大众汽车股份公司2009版权所有奥迪公司、宝马公司、戴姆勒公司、Dr. Ing. h. c. F.保时捷公司、大众汽车股份公司只适用于英文译本：英文译本被认为是准确无误的。
如有差异，应以德国文本为准。
数字符号符合ISO 惯例。
目录序言 (7)1范围 (7)2规范性引用文件 (8)3缩写、首字母缩略词、定义和符号 (8)3.1定义 (8)3.2缩写 (10)4所含物质和可回收性 (12)5高压系统概述 (12)5.1高压系统 (12)5.2高压组件 (12)6高压系统电气运行范围 (15)6.1设备类别和电压等级 (15)6.2高压运行状态 (15)6.3电压范围 (16)6.3.1电压电平 (16)6.3.2运行电压 (16)6.3.2.1运行电压概述 (16)6.3.2.2无限可操作性范围 (17)6.3.2.3有限可操作性范围上限 (18)6.3.2.4有限可操作性范围下限 (18)6.3.2.5极有限可操作性范围 (18)6.3.3动态参数 (19)6.3.3.1动态参数概述 (19)6.3.3.2电压动态 (19)6.3.3.3电压纹波 (20)6.3.4电压偏差 (20)6.3.4.1电压偏差概述 (20)6.3.4.2过电压 (21)6.3.4.3超过极限电压的过电压 (21)6.3.4.4欠压 (21)6.3.4.5甩负荷 (22)6.3.5电压范围汇总 (22)6.3.6根据测试电压进行设计 (23)6.3.7电压偏移 (23)6.4低压和高压系统之间的相互作用 (24)6.5高压触点极性反接保护 (24)7电气性能和高压安全要求 (24)7.1标识 (24)7.2防止接触 (26)7.2.1安装防护罩防止接触 (27)7.2.2利用固体绝缘材料防止接触 (28)7.2.3通过“复杂拆卸”防止接触 (28)7.3等电位联结 (29)7.4过电流保护（电能存储装置） (31)7.5短路 (32)7.6高压系统和低压电气系统的电气隔离 (32)7.7绝缘电阻 (32)7.8固体绝缘材料、电气间隙和爬电距离 (33)7.9介电强度 (34)7.10有源放电 (35)7.11无源放电 (35)7.12直流高压电路电容器 (36)7.13Y电容器 (36)7.14高压触点 (36)7.15高压联锁 (37)7.16延迟触及带电部件 (37)7.17发生碰撞时的行为 (38)7.18高压（HV）诊断 (38)7.19低压电源故障 (39)7.20等效电路 (39)7.21安装位置和环境条件 (39)7.22预组装和安装 (40)7.23EMC (40)7.24高压组件的欠载因素 (40)7.25文件 (40)7.25.1安全相关和认证相关的高压范围 (41)7.25.2高压部件认证描述 (42)8单个高压组件附加要求 (42)8.1 绝缘监测 (42)8.2甩负荷时的限压 (43)8.3服务断开 (44)8.4预充电电路 (44)8.5开放式高压电缆检测 (45)8.6高压电池的要求 (45)8.7高压-低压直流-直流转换器的要求 (46)8.8逆变器的要求 (47)8.9高压线束要求 (47)9测试 (48)9.1概况 (48)9.2电压范围测试 (51)9.2.1无限可操作范围测试 (51)9.2.2有限可操作范围上限测试 (52)9.2.3有限可操作范围下限测试 (52)9.2.4极限可操作范围测试 (53)9.2.5电压动态测试 (54)9.2.6电压纹波测试 (55)9.2.7过电压测试 (55)9.2.8极限电压以上过电压测试 (56)9.2.9欠电压测试 (58)9.2.10负荷突降测试 (58)9.2.11测试电压规定的设计测试 (59)9.2.12电压偏移测试 (59)9.2.13高压和低压系统之间相互作用的测试 (61)9.3电气性能和高压安全性测试 (61)9.3.1标识测试 (61)9.3.2防接触测试： (62)9.3.3 等电位联结测试 (63)9.3.4过电流保护（电储能装置）测试 (64)9.3.5短路测试 (65)9.3.6高压系统和低压电气系统电气隔离测试 (65)9.3.7绝缘电阻测试 (65)9.3.8固体绝缘材料、间隙和爬电距离测试 (70)9.3.9介电强度测试 (70)9.3.10有源放电测试 (74)9.3.11无源放电测试 (74)9.3.12直流高压电路电容器测试 (75)9.3.13Y型电容器测试 (75)9.3.14高压接触器测试 (76)9.3.15高压联锁测试 (76)9.3.16延迟触及带电部件的测试 (77)9.3.17发生碰撞时的行为测试 (77)9.3.18高压（HV）诊断测试 (78)9.3.19低压电源故障测试 (78)9.3.20电气等效电路测试 (79)9.3.21安装位置和环境条件测试 (79)9.3.22预组装和安装测试 (79)9.3.23电磁兼容性测试 (79)9.3.24高压组件欠载因数测试 (80)9.3.25文件测试 (80)9.3.26测试序列计划 (80)9.4单个高压组件附加要求测试 (81)9.4.1绝缘监测测试 (81)9.4.2负荷突降时的限压测试 (82)9.4.3服务断开测试 (82)9.4.4预充电电路测试 (83)9.4.5开放高压电缆监测测试 (83)9.4.6高压电池要求测试 (83)9.4.7高压-低压直流-直流转换器要求测试 (84)9.4.8逆变器要求测试 (85)9.4.9高压线束要求测试 (85)A.1国际参考文献 (86)A.2美国参考文献 (89)A.3日本参考文献 (91)A.4德国参考文献 (91)LV123-4序言LV123-5该版供应规范由下列汽车制造商（本文中称为原始设备制造商）代表编制：•奥迪公司•宝马公司•戴姆勒公司•Dr. Ing. h. c. F.保时捷公司•大众汽车股份公司LV123-6该供应规范编制请求是由上述公司的电气工程（EE）部门的负责人提出的。
1300系列水暖区域值规格说明说明书
1300 SERIESHYDRONIC ZONE VALVESSPECIFICATIONSElectrical Ratings .......................................................................................................24 VAC ...........................................................................................................................1311 - 0.4A ...........................................................................................................................1361 - 0.2A ..................................................................................................................Aux Switch - 2.0AFEATURES• Self-aligning barrel-type valve stem design • Made of a corrosion-resistant stainless steel• Motor can be removed from valve assembly without draining system • Built-in auxiliary contacts to control burner or circulator relay• Automatic recycling manual operator shows valve position at all times • Screw terminal wiring panel for added convenience1300 Series valves for zoning systems up to 50 PSI operate quietly and efficiently providing years of reliable service.HYDRONIC ZONE VALVES1300 SERIES3-WIRE, 24V VALVES WITH SCREW TERMINAL WIRING PANEL AND AUXILIARY SWITCH(See table at bottom for compatible thermostats)1311 COMPATIBLE THERMOSTATS TABLE1311-1022-WIRE, 24V VALVES WITH SCREW TERMINAL WIRING PANEL AND AUXILIARY SWITCHValve current is 0.4A only during opening or closing. For proper anticipation, select thermostat designed for use with a 3-wire zone valve.①②Valve current is 0.52A when opening but 0.2A when fully open: therefore set anticipator for 0.2A. ③GPM @ 1 PSI drop.R-4899_053_12.11.201300 SERIES HYDRONIC ZONE VALVES PARTS AND ACCESSORIESR-4899_053_12.11.20HYDRONIC ZONE VALVES 1300 SERIES WIRING INFORMATION1311 THREE-WIRE ZONE VALVETERMINALS 1, 2 = POWER TO VALVE1 = 24 VAC NEUTRAL2 = 24 VAC HOTTERMINALS 5,4,6 = SPDT THERMOSTAT5 = POWER (SAME AS 2 INTERNALLY)4 = OPENS VALVE6 = CLOSES VALVETERMINALS 2, 3 = AUXILIARY SWITCH2, 3 BECOME SAME POINT ON CALL FOR HEATTERMINALS 1, 3 = POWER OUT TO AUXILIARY CIRCUITON CALL FOR HEATTROUBLESHOOTING:1. Attach a voltmeter to terminals 1 and2. Power (24 volts) should always be present on 1 and 2. If power is interrupted check transformer or power source.2. With a voltmeter attached as above, jumper terminals 5 and 4 to verify the valve opens. If power is present on 1 and 2 butthe valve fails to open check connections. Replace motor assembly (replacement Motor # F19-0097) if condition persists. When the valve opens, break the connection between 5 and 4 and jumper between 5 and 6. The valve should close. If the valve fails to close replace motor assembly.3. Terminals 2 and 3 (auxiliary circuit) become the same point electrically when the valve opens. Because terminal 2 is 24 volts hot, a voltmeter should read 24 volts between terminal 3 and terminal 1 (neutral) when the valve is open.NOTE: If the auxiliary circuit terminals (2 and 3) are being attached to a control circuit with a separate transformer the transformers must be in phase or one transformer may be damaged. If phasing the transformers is not possible a 24 volt isolation relay can be installed with the coil attached to terminals 1 and 3 and the contacts can be used to operate the control circuit. The relay will energize when the valve opens.For complete installation instructions visit our website.R-4899_053_12.11.201300 SERIES WIRING INFORMATION HYDRONIC ZONE VALVES1361 TWO-WIRE ZONE VALVETERMINALS 1, 2 = POWER TO VALVE1 = 24 VAC NEUTRAL2 = 24 VAC HOTTERMINALS 2, 4 = SPST THERMOSTATMAKE TO OPEN, BREAK TO CLOSETERMINALS 2, 3 = AUXILIARY SWITCH2, 3 BECOME SAME POINT ON CALL FOR HEATTERMINALS 1, 3 = POWER OUT TO AUXILIARY CIRCUITON CALL FOR HEATTROUBLESHOOTING:1. Attach a voltmeter to terminals 1 and2. Power (24 volts) should always be present on 1 and 2. If power is interrupted check transformer or power source.2. With voltmeter attached as above, jumper terminals 2 and 4 to verify the valve opens. If power is present on 1 and 2 but the valve fails to open check connections. Replace motor assembly (Replacement Motor # F19-0104) if condition persists. When the jumper is removed between 2 and 4 the valve should close. If the valve fails to close replace motor assembly.3. Terminals 2 and 3 (auxiliary circuit) become the same point electrically when the valve opens. Because terminal 2 is 24 volts hot, a voltmeter should read 24 volts between terminal 3 and terminal 1 (neutral) when the valve is open.NOTE: If the auxiliary circuit terminals (2 and 3) are being attached to a control circuit with a separate transformer the transformers must be in phase or one transformer may be damaged. If phasing the transformers is not possible a 24 volt isolation relay can be installed with the coil attached to terminals 1 and 3 and the contacts can be used to operate the control circuit. The relay will energize when the valve opens.For complete installation instructions visit our website.R-4899_053_12.11.20。
稀土热障涂层材料-锆酸钆镱粉末-最新国标
稀土热障涂层材料—锆酸钆镱粉末1范围本文件规定了稀土热障涂层材料—锆酸钆镱粉末的技术要求、试验方法、检验规则、标志、包装、运输、贮存及质量证明书。
本文件适用于以镱、钆、锆的单质或化合物为原料，采用化学法制得的，供航空发动机叶片高温热障涂层等领域用的锆酸钆镱粉末。
2规范性引用文件下列文件中的内容通过文中的规范性引用而构成本文件必不可少的条款。
其中，注日期的引用文件，仅该日期对应的版本适用于本文件；不注日期的引用文件，其最新版本（包括所有的修改单）适用于本文件。
GB/T8170数值修约规则与极限数值的表示与判定GB/T12690.2稀土金属及其氧化物中非稀土杂质化学分析方法第2部分：稀土氧化物中灼减量的测定重量法GB/T12690.3稀土金属及其氧化物中非稀土杂质化学分析方法第3部分：稀土氧化物中水分量的测定重量法GB/T17803稀土产品牌号表示方法GB/T20170.1稀土金属及其化合物物理性能测试方法稀土化合物粒度分布的测定GB/T31057.1颗粒材料物理性能测试第1部分松装密度的测量GB/T31057.2颗粒材料物理性能测试第2部分振实密度的测量GB39176稀土产品的包装、标志、运输和贮存3术语和定义下列术语和定义适用于本文件。
3.1粒度分布系数Particle size distribution coefficient用来衡量产品粒度分布情况的参数，按式（1）计算分布系数（q）：501090 D DDq-=---------------------------------------（1）式中：D90——粒径的体积累积分布中对应于90%的粉体的粒径，单位为微米（μm）；D50——粒径的体积累积分布中对应于50%的粉体的粒径，单位为微米（μm）；D10——粒径的体积累积分布中对应于10%的粉体的粒径，单位为微米（μm）。
4技术要求4.1产品分类产品按化学成分分为(Gd，Yb)2Zr2O7-5Yb，(Gd，Yb)2Zr2O7-8Yb，(Gd，Yb)2Zr2O7-10Yb三个牌号，产品牌号表示方法应符合GB/T17803的规定。
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STD13003
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES s MEDIUM VOLTAGE CAPABILITY
s LOW SPREAD OF DYNAMIC PARAMETERS s
MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix "T4")
s
THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1")
APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies.
®
September 2001 ABSOLUTE MAXIMUM RATINGS
1/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T case = 25 o
C unless otherwise specified)
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
STD13003
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
STD13003
Inductive Fall Time
Inductive Storage Time
Reverse Biased SOA
STD13003
STD13003 Figure 1:
Inductive Load Switching Test Circuit.
Resistive Load Switching Test Circuit.
Figure 2:
STD13003
STD13003
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
STD13003。