IXGR40N60C;中文规格书,Datasheet资料
FGH40N60SMD;中文规格书,Datasheet资料
Typ.
-
Max.
0.43 1.5 40
Package Marking and Ordering Information
Device Marking
Device
FGH40N60SMD
FGH40N60SMD
Package
TO-247
Reel Size
-
Tape Width
-
Units
oC/W oC/W oC/W
IF = 20A
TC = 25oC TC = 175oC
Erec
Reverse Recovery Energy
TC = 175oC
trr
Diode Reverse Recovery Time IF =20A, dIF/dt = 200A/ms
TC = 25oC TC = 175oC
Qrr
Diode Reverse Recovery Charge
TC = 25oC TC = 175oC
Min.
-
Typ.
2.3 1.67 48.9 36 110 46.8 445
Max
2.8 -
Unit s
V uJ ns
nC
FGH40N60SMD Rev. A
3
/
FGH40N60SMD 600V, 40A Field Stop IGBT
100
20V
12V
15V
10V
Collector Current, IC [A]
Collector Current, IC [A]
80
80
60
60
VGE = 8V
VGE = 8V
40
IXDP20N60B;IXDP20N60BD1;中文规格书,Datasheet资料
M 4.32 4.82 N 1.14 1.39
Q 0.35 0.56 R 2.29 2.79
Inches Min. Max.
0.500 0.550 0.580 0.630
0.390 0.420 0.139 0.161
0.230 0.270 0.100 0.125
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 20N60 B VCES = 600 V
IXDP 20N60 BD1 IC25
= 32 A
V = CE(sat) typ 2.2 V
C
C
TO-220 AB
1-4
/
IXDP 20N60 B IXDP 20N60 BD1
Symbol
Cies C
oes
Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
easy paralleling q MOS input, voltage controlled q optional ultra fast diode q International standard package
Advantages
q Space savings q High power density
80
RG = 22W
A TJ = 125°C ICM 60
IXGX40N60BD1;中文规格书,Datasheet资料
© 2003 IXYS All rights reserved Symbol Test ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)Min.Typ.Max.BV CES I C = 750 µA, V GE = 0 V 600V V GE(th)I C= 500 µA, V CE = V GE2.55.0V I CES V CE = 0.8 • V CES T J = 25°C 650µA V GE = 0 VT J = 125°C3mA I GES V CE = 0 V, V GE = ±20 V±100nA V CE(sat)I C = I C90, V GE = 15 V1.62.1VPulse test, t < 300µs ,duty cycle < 2%HiPerFAST TMIGBT with DiodeSymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ±20V V GEM Transient ±30V I C25T C =25°C 75A I C110T C =110°C 40A I CM T C =25°C, 1 ms150A SSOA V GE = 15 V, T VJ = 125°C, R G = 10 ΩI CM = 80A(RBSOA)Clamped inductive load @ 0.8 V CESP C T C = 25°C250W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C M d Mounting torque, TO-264 1.13/10Nm/lb.in.Weight5g Maximum lead temperature for soldering 300°C1.6 mm (0.062 in.) from case for 10 sG = Gate C = Collector E = Emitter Tab = CollectorFeatures•International standard package PLUS247 (hole-less TO-247)•High frequency IGBT and antparallel FRED in one package•New generation HDMOS TM process •High current handling capability •MOS Gate turn-on fordrive simplicity •Fast Recovery Epitaxial Diode (FRED)with soft recovery and low I RMApplications•AC motor speed control •DC servo and robot drives •DC choppers•Uninterruptible power supplies (UPS)•Switch-mode and resonant-modepower supplies Advantages•Space savings (two devices on onepackage•Easy to mount with 1 screw • Easy spring clip assemblyDS98801A(01/03)PLUS247(IXGX)V CES=600V I C25= 75A V CE(sat)= 2.1V t fi(typ)=180ns(TAB)IXGX 40N60BD1Preliminary D ataIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B14,850,0724,931,8445,034,7965,063,3075,237,4815,381,025SymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)Min. Typ. Max.g fs I C = I C90; V CE = 10 V,3042S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %C ies 3300pF C oes V CE = 25 V, V GE = 0 V, f = 1 MHz370pF C res 65pF Q g 116nC Q ge I C = I C90, V GE = 15 V, V CE = 0.5 V CES23nC Q gc 65nCt d(on)25ns t ri 30ns t d(off)180300ns t fi 180270nsE off 2.7 6.0mJt d(on)25ns t ri 30ns E on 1.2mJ t d(off)300ns t fi 270ns E off 4.0mJR thJC 0.50K/W R thCK0.15K/WInductive load, T J = 25°C I C = I C90, V GE = 15 VV CE = 0.8 V CES , R G = R off = 4.7 ΩRemarks: Switching times mayincrease for V CE (Clamp) > 0.8 • V CES ,higher T J or increased R G Inductive load, T J = 125°C I C = IC90, V GE = 15 VV CE = 0.8 V CES , R G = R off = 4.7 ΩRemarks: Switching times mayincrease for V CE (Clamp) > 0.8 • V CES ,higher T J or increased R GReverse Diode (FRED)Characteristic Values(T J = 25°C, unless otherwise specified)Symbol Test Conditionsmin.typ.max.V F I F = I C90, V GE = 0 V,T J = 150°C 1.3V Pulse test, t ≤ 300 ms, duty cycle d 22 % 1.8V I RM I F = I C90, V GE = 0 V, -di F /dt = 100 A/µs,7.5AV R = 100 Vt rr I F = 1 A; -di/dt = 100 A/µs; V R = 30 V35ns R thJC0.65K/W分销商库存信息: IXYSIXGX40N60BD1。
LG iGX样本(中文版)
-Solution Leader in Electrics& Automation
STARVERT G X
紧凑高性能变频器
0.4~22kW 3Phase 380~480Volts
Automatiom Equipment
New Name of
小心选择电流断路器. 当变频器上电的时候，可能有大 的浪涌电流涌入
为了使变频器长时间运行在高性能状态下,请把变频器安 装在正确的方向的适当的位置,留出适当的空间.不正确的 端子接线会导致设备的损坏.
有必要的情况下再安装。 如果安装了，不要用它来 启动和停止变频器。否则， 容易缩短产品的使用寿命。
控制连线
安全警告
为了您的安全，请在操作前先阅读说明书 请联系授权的服务人员进行检查、维修、调整 请由专业人员进行拆除维修
LS产电的30年
LS产电在不断地变革和成长中积累了丰富的经验。 同时具备了面临激烈竞争及挑战时也能生存并发展的强大组织力量。
取得飞跃和成长的企业 1974年 金星机电(株)创立 1987年 金星产电(株)设立 1994年 企业上市
电气及自动化领域的领先者 1995年 商号变更为LG产电(株) 1996年 取得了韩国最早变频器领域
的ISO9001认证 1998年 低压电器生产突破1亿台
第二次质的飞跃 1999年 合并LG金属(株) 1999年 转让铜管和自动销售机事业 2003年 内部调整，归属于LG电缆 2005年 更名为LS产电
动能缓冲
电源突降或瞬时掉电的情况下，变频器会出现欠压故障并保护停机。使 用此功能后，变频器在电源出现问题时会根据减速方式或直流电压参考方式 控制输出频率，利用电机产生的回馈能量维持直流侧电压以延长出现欠压保 护的时间，实现电源突降或瞬时掉电的情况下变频器能持续工作。
40n60场效应管参数
40n60场效应管参数（实用版）目录1.40n60 场效应管的基本概念2.40n60 场效应管的主要参数3.40n60 场效应管参数的测量方法4.40n60 场效应管的应用领域正文一、40n60 场效应管的基本概念40n60 场效应管是一种双极型场效应管，其中的数字“40”和“60”分别代表了该场效应管的尺寸参数，即宽度与长度。
40n60 场效应管属于N 沟道型场效应管，通常用于放大和开关电信号。
它具有高输入电阻、低噪声和低功耗等特点，在电路设计中有着广泛的应用。
二、40n60 场效应管的主要参数1.漏极电流（ID）：指在特定的电压下，从漏极流向源极的电流。
2.源极电流（IS）：指在特定的电压下，从源极流向漏极的电流。
3.栅极电流（IG）：指在特定的电压下，从栅极流入或流出的电流。
4.跨导（Gm）：表示栅极电流变化引起的漏极电流变化的比例，用来衡量场效应管的放大能力。
5.输出电阻（RO）：指在源极开路时，从漏极到源极的电阻。
6.输入电阻（Ri）：指在栅极开路时，从源极到漏极的电阻。
三、40n60 场效应管参数的测量方法1.使用万用表进行测量：将万用表调整至场效应管测量档位，根据显示屏上的数据读取漏极电流、源极电流和栅极电流等参数。
2.使用示波器进行测量：将示波器连接到场效应管的各个端口，通过观察波形和测量幅度，获取场效应管的跨导、输出电阻和输入电阻等参数。
四、40n60 场效应管的应用领域1.电子放大器：40n60 场效应管在电子放大器中具有广泛应用，可以实现对信号的放大和传输。
2.模拟开关：40n60 场效应管的高输入电阻和低噪声特性使其成为模拟开关的理想选择。
3.电源开关：在电源开关应用中，40n60 场效应管可以实现高效、低功耗的信号控制。
4.传感器信号处理：在传感器信号处理领域，40n60 场效应管可以用于信号放大和滤波等功能。
总之，40n60 场效应管作为一种常用的半导体器件，具有优越的性能和广泛的应用领域。
40n60npfd的参数
40n60npfd的参数40n60npfd参数是指一款电子元件的规格和性能参数。
这款电子元件主要应用于电源管理、电动机控制以及开关模块等领域，具有高效率、高可靠性和低功耗等特点。
下面将详细介绍40n60npfd的参数。
我们来看看40n60npfd的工作电压。
该电子元件的工作电压范围为40V至60V，这使得它适用于各种工作环境，能够满足不同电路的需求。
同时，该元件还具有良好的电压调节能力和电压稳定性，可以有效地保护相关电路。
我们来介绍40n60npfd的电流能力。
该元件的最大连续漏极电流为60A，最大脉冲漏极电流为200A。
这意味着该元件能够承受高达60A 的电流负载，具有很好的电流调节能力。
同时，最大脉冲漏极电流为200A，可以应对一些突发性的高电流负载，确保电路的稳定性和安全性。
另外，40n60npfd具有较低的导通电阻。
该元件的导通电阻为40mΩ，这意味着在导通状态下，电子元件能够提供较低的电阻，减少能量损耗，提高整个电路的效率。
同时，该元件还具有较低的开启电阻，可以快速地实现关断状态，确保电路的安全性和可靠性。
40n60npfd的驱动电源需要12V至15V的电压。
这个电压范围可以满足大部分电路的供电需求，同时也提供了足够的电压来确保电路的稳定工作。
在温度方面，40n60npfd的工作温度范围是-55℃至150℃。
这个宽广的工作温度范围意味着该元件在极端的热或冷环境下都能正常工作，具有较高的适应性和可靠性。
我们来简单介绍一下该元件的封装形式和外观尺寸。
40n60npfd采用TO-220封装，外观尺寸为10mm×15mm×4.6mm。
这种封装形式具有良好的热传导性能和可靠的机械强度，方便安装和维护。
综上所述，40n60npfd是一款具有高效率、高可靠性和低功耗等特点的电子元件。
它的主要参数包括工作电压范围、电流能力、导通电阻、驱动电源、工作温度范围以及封装形式和外观尺寸等。
IXGP7N60C;IXGA7N60C;中文规格书,Datasheet资料
© 2002 IXYS All rights reserved98564A (06/02)Symbol Test Conditions Maximum RatingsVCES TJ= 25°C to 150°C600VVCGR TJ= 25°C to 150°C; RGE= 1 MΩ600VVGESContinuous±20VVGEMTransient±30VI C25TC= 25°C 14AI C90TC= 90°C 7AI CM TC= 25°C, 1 ms 30ASSOA VGE = 15 V, TVJ= 125°C, RG= 22 Ω ICM= 14A(RBSOA)Clamped inductive load, L = 300 µH @ 0.8 VCESPC TC= 25°C 54WTJ-55 (150)TJM150CTstg-55 (150)Maximum lead temperature for soldering 300C 1.6 mm (0.062 in.) from case for 10 sMd Mounting torque, (TO-220) M3 0.45/4 Nm/lb.in.M3.5 0.55/5 Nm/lb.in.Weight TO-220 4g TO-263 2 g Symbol Test Conditions Characteristic Values(TJ = 25°C, unless otherwise specified)min.typ.max.BVCESIC= 250 µA, VGE= 0 V600VVGE(th)IC= 250 µA, VCE= VGE2.5 5.5VI CES VCE= 0.8 • VCESTJ= 25°C100µA VGE= 0 V TJ= 125°C500µAI GES VCE= 0 V, VGE= ±20 V±100nAVCE(sat)IC= IC90, VGE= 15 V 2.0 2.7VFeatures•International standard packagesJEDEC TO-263 surfacemountable and JEDEC TO-220 AB•High frequency IGBT•High current handling capability•HiPerFAST TM HDMOS TM process•MOS Gate turn-on-drive simplicityApplications•Uninterruptible power supplies (UPS)•Switched-mode and resonant-modepower supplies•AC motor speed control•DC servo and robot drives•DC choppersAdvantages•High power density•Suitable for surface mounting•Very low switching losses for highfrequency applicationsVCES=600VIC25=14AVCE(sat)= 2.7Vtfi=45nsG = Gate, C = Collector,E = Emitter,TAB = CollectorHiPerFAST TM IGBT Lightspeed TM Series IXGA 7N60CIXGP 7N60CGEC (TAB)TO-263 AA (IXGA)TO-220AB (IXGP)IXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7156,306,728B14,850,0724,931,8445,034,7965,063,3075,237,4815,381,025SymbolTest ConditionsCharacteristic ValuesTO-220 AB Outlinelimeter Inches Min.Max.Min.Max.A 12.7013.970.5000.550B 14.7316.000.5800.630C9.9110.660.3900.420D 3.54 4.080.1390.161E 5.85 6.850.2300.270F 2.54 3.180.1000.125G 1.15 1.650.0450.065H 2.79 5.840.1100.230J 0.64 1.010.0250.040K 2.54BSC 0.100BSC M 4.32 4.820.1700.190N 1.14 1.390.0450.055Q 0.350.560.0140.022R2.29 2.790.0900.110TO-263 AA OutlinePins:1 - Gate2 - Collector3 - Emitter4 - CollectorBottom SideMin. Recommended Footprint (Dimensions in inches and mm)分销商库存信息:IXYSIXGP7N60C IXGA7N60C。
40N60
IRFPS40N60K01/30/02 1PD - 94384SMPS MOSFETHEXFET ® Power MOSFETl Hard Switching Primary or PFC Switch l Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply l High Speed Power Switching l Motor DriveBenefitsApplicationsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamic dv/dt Ruggednessl Fully Characterized Capacitance and Avalanche Voltage and Currentl Enhanced Body Diode dv/dt Capability ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 40I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 24A I DMPulsed Drain Current 160P D @T C = 25°C Power Dissipation 570W Linear Derating Factor 4.5W/°C V GS Gate-to-Source Voltage± 30V dv/dt Peak Diode Recovery dv/dt 5.5V/nsT J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300(1.6mm from case )°CAbsolute Maximum RatingsSUPER TO-247ACAvalanche CharacteristicsSymbolParameterTyp.Max.UnitsE AS Single Pulse Avalanche Energy –––600mJ I AR Avalanche Current–––40A E ARRepetitive Avalanche Energy–––57mJSymbolParameterTyp.Max.UnitsR θJC Junction-to-Case–––0.22R θCS Case-to-Sink, Flat, Greased Surface 0.24–––°C/WR θJAJunction-to-Ambient–––40Thermal ResistanceV DSSR DS(on) typ.I D600V0.110 Ω40AIRFPS40N60KStatic @ T = 25°C (unless otherwise specified)Repetitive rating; pulse width limited bymax. junction temperature. (See Fig. 11)I SD ≤ 38A, di/dt ≤ 150A/µs, V DD ≤ V (BR)DSS ,T J ≤ 150°CNotes:Starting T J = 25°C, L = 0.84mH, R G = 25Ω,I AS = 38A, dv/dt =5.5V/ns (See Figure 12a)Pulse width ≤ 300µs; duty cycle ≤ 2%.C oss eff. is a fixed capacitance that gives the same charging timeas C oss while V DS is rising from 0 to 80% V DSSIRFPS40N60K 3Vs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics V DS , Drain-to-Source Voltage (V)I , D r a i n -t o -S o u r c e C u r r e n t (A )V DS , Drain-to-Source Voltage (V)I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRFPS40N60KFig 8. Maximum Safe Operating AreaGate-to-Source VoltageDrain-to-Source VoltageForward Voltage10100100010000100000C , C a p a c i t a n c e (p F )110100100010000V DS , Drain-toSource Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRFPS40N60K 5Fig 10a.Switching Time Test CircuitV V d(on)r d(off)fFig 10b. Switching Time WaveformsV DDCase TemperatureIRFPS40N60K6VDSCurrent Sampling ResistorsV GS Fig 13a. Gate Charge Test Circuit Fig 13b. Basic Gate Charge WaveformVs. Drain CurrentFig 12d. Unclamped Inductive WaveformsFig 12c. Unclamped Inductive Test CircuitI ASV D DFig 14. Threshold Voltage Vs. TemperatureT J , Temperature ( °C )V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )IRFPS40N60K 7Fig 14. For N-Channel HEXFET ® Power MOSFETs* V GS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test CircuitV DDIRFPS40N60KData and specifications subject to change without notice.This product has been designed and qualified for the Industrial market.Qualification Standards can be found on IR ’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .01/02SUPER TO-247AC Package OutlineDimensions are shown in millimeters (inches)。
IXFN40N60中文资料
1 - 2© 2000 IXYS All rights reservedminiBLOC, SOT-227 B (IXFN) E153432Features·International standard packages ·Encapsulating UL 94 V-0, flammability classification ·miniBLOC isolation·Low R DS (on)·Rugged polysilicon gate cell structure ·Unclamped Inductive Switching (UIS)rated·Low package inductance ·Fast intrinsic RectifierApplications·DC-DC converters·Synchronous rectification ·Battery chargers·Switched-mode and resonant-mode power supplies ·DC choppers·Temperature and lighting controls ·Low voltage relays Advantages ·Easy to mount ·Space savings ·High power densityG = Gate S = SourceEither Source terminal at miniBLOC can be used as Main or Kelvin SourceSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified)Min.Max.V DSS V GS = 0 V, I D = 3mA 600V V GH(th)V DS = V GS , I D = 8mA 24V I GSS V GS = ±20 V GE = 0±200nAI DSS V DS = 0.8 • V DSS V T J = 25 °C 400 m A V GS = 0 VT J = 125 °C 2mA R DS(on)V GS = 10 V, I D = 0.5 • I D2543N600.13 W Pulse test, t £ 300 ms,40N600.15 Wduty cycle d £ 2 %97503 A(7/97)IXYS reserves the right to change limits, test conditions, and dimensions.2 - 2© 2000 IXYS All rights reservedSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified)Min.Typ.Max.g fs V DS = 10 V; I D = 0.5 • I D25, pulse testTBD S C iss TBD pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz TBD pF C rss TBD pF t d(on)TBD ns t r V GS = 10 V, V DS = 0.5 • V DSS , I D = 0.5 • I D25TBD ns t d(off)R G = 1 Ω (External),TBD ns t f TBD ns Q g(on)TBD nC Q gs V GS = 10 V, V DS = 0.5 • V DSS , I D = 0.5 • I D25TBD nC Q gd TBDnC R thJC TO-264 AA 0.22K/W R thCK TO-264 AA0.15K/W R thJC miniBLOC, SOT-227 B 0.21K/W R thCKminiBLOC, SOT-227 B0.05K/WSource-Drain Diode(T J = 25°C, unless otherwise specified)Characteristic Values Symbol Test Conditions Min.Typ.Max.I S V GS = 043N6043A 40N6040A I SM Repetitive;43N60172A pulse width limited by T JM40N60160A V SD I F = 100 A, V GS = 0 V,1.5V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %t rr TBD ns Q RM I F = 50 A, -di/dt = 100 A/µs, V R = 100 V TBD µC I RMTBDANotes: 1.R GS = 1 M Ω2.Pulse width limited by T JM.Millimeter InchesMin.Max.Min.Max.4.82 5.13.190.2022.54 2.89.100.1142.00 2.10.079.0831.12 1.42.044.0562.39 2.69.094.1062.90 3.09.114.1220.530.83.021.03325.9126.16 1.020 1.03019.8119.96.780.7865.46 BSC .215 BSC 0.000.25.000.0100.000.25.000.01020.3220.83.800.8202.29 2.59.090.1023.17 3.66.125.1446.07 6.27.239.2478.388.69.330.3423.81 4.32.150.1701.78 2.29.070.0906.04 6.30.238.2481.57 1.83.062.072M4 screws (4x) suppliedMillimeter Inches Min.Max.Min.Max.31.5031.88 1.240 1.2557.808.200.3070.3234.09 4.290.1610.169 miniBLOC, SOT-227 BIXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025。
2N6058中文资料(microsemi)中文数据手册「EasyDatasheet - 矽搜」
极性：NPN（见
安装硬件：可选绝缘体和金属板螺钉向厂家咨询
重量：约15克
在最后一页.
可靠性水平
JAN = JAN水平 JANTX = JANTX水平 JANTXV = JANTXV水平
空白=商业
JEDEC类 型 号 (see 电气特性
表）
PART命名法
JAN 2N6058 (e3)
符
IB IC IE TC V CB
输出电容
VCB = 10 V,IE = 0,F = 100千赫≤˚F≤1兆赫
2N6058和2N6059
@ T A = +25 Co除非另有说明
符
Min. Max. Unit
2N6058 V(BR)CEO
80
2N6059
100
V
2N6058 2N6059
ICEO
1.0
mA
1.0
2N6058 2N6059
V CBO
V EBO PT
Value -55到+175
1.0 12 80 100 80 100 5 150 75
Unit oC oC/W A V
V
V W
T4-LDS-0307,修订版1（8/5/13）
芯片中文手册,看全文,戳
2N6058和2N6059
机械和包装
案例：行业标准TO-204AD（TO-3）,密封,0.040英寸直径引脚. 表面处理：焊接浸锡铅镍镀合金 52或符合RoHS标准雾锡电镀.每MIL-STD-750方法2026焊 性.
集电极电源电压：施加到连接到所述集电极电路电源电压. 集电极 - 发射极电压：集电极和发射极之间直流电压. 集电极 - 发射极电压,基极开路：集电极和发射极端时基极端是开路之间电压.
IXFH26N60中文资料
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
GW40NC60V中文资料
1/10July 2004STGW40NC60VN-CHANNEL 50A - 600V - TO-247Very Fast PowerMESH™ IGBTTable 1: General Featuress HIGH CURRENT CAPABILITYsHIGH FREQUENCY OPERATION UP TO 50 KHzsLOSSES INCLUDE DIODE RECOVERY ENERGYs OFF LOSSES INCLUDE TAIL CURRENT s LOWER C RES / C IES RATIOsNEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRUBUTIONDESCRIPTIONUsing the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow-erMESH ™ IGBTs, with outstanding performances.The suffix “V” identifies a family optimized for high frequency.APPLICATIONSs HIGH FREQUENCY INVERTERSs SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s UPSs MOTOR DRIVERSTable 2: Order CodesTYPE V CES V CE(sat) (Max) @25°C I C@100°CSTGW40NC60V600 V< 2.5 V50 ASALES TYPE MARKING PACKAGE PACKAGINGSTGW40NC60VGW40NC60VTO-247TUBERev. 10STGW40NC60V2/10Table 3: Absolute Maximum ratings(1)Pulse width limited by max. junction temperature.Table 4: Thermal DataELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 5: OffTable 6: On(#) Calculated according to the iterative formula:Symbol ParameterValue Symbol V CES Collector-Emitter Voltage (V GS = 0)600V V ECR Reverse Battery Protection 20V V GE Gate-Emitter Voltage± 20V I C Collector Current (continuous) at 25°C (#)80A I C Collector Current (continuous) at 100°C (#)50A I CM (1)Collector Current (pulsed)200A P TOT Total Dissipation at T C = 25°C 260W Derating Factor 2.08W/°C T stg Storage Temperature– 55 to 150°CT jOperating Junction TemperatureMin.Typ.Max.Unit Rthj-case Thermal Resistance Junction-case 0.48°C/W Rthj-amb Thermal Resistance Junction-ambient50°C/W T LMaximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.)300°CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V BR(CES)Collectro-Emitter Breakdown VoltageI C = 1 mA, V GE = 0600VI CESCollector-Emitter Leakage Current (V CE = 0)V GE = Max Rating Tc=25°C Tc=125°C101µA mA I GESGate-Emitter Leakage Current (V CE = 0)V GE = ± 20 V , V CE = 0± 100nASymbol ParameterTest Conditions Min.Typ.Max.Unit V GE(th)Gate Threshold Voltage V CE = V GE , I C = 250 µA 3.755.75V V CE(SAT)Collector-Emitter Saturation VoltageV GE = 15 V, I C = 40A, Tj= 25°C V GE = 15 V, I C = 40A, Tj= 125°C1.91.72.5V VI C T C ()T JMAX T C–R THJ C –V CESAT MAX ()T C I C,()×-------------------------------------------------------------------------------------------------=3/10STGW40NC60VELECTRICAL CHARACTERISTICS (CONTINUED)Table 7: DynamicTable 8: Switching On2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode,the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)Table 9: Switching Off(3)Turn-off losses include also the tail of the collector current.Symbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V CE = 15 V , I C = 20 A20S C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer CapacitanceV CE = 25V, f = 1 MHz, V GE = 04550350105pF pF pF Q g Q ge Q gc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge V CE = 390 V, I C = 40 A, V GE = 15V, (see Figure 20)2143096nC nC nC I CLTurn-Off SOA Minimum CurrentV clamp = 480 V , Tj = 150°C R G = 100 Ω, V GE = 15V200ASymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r (di/dt)on Eon (2)Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching Losses V CC = 390 V, I C = 40 AR G =3.3Ω, V GE = 15V, Tj= 25°C (see Figure 18)43172060330450ns ns A/µs µJ t d(on)t r (di/dt)on Eon (2)Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Switching LossesV CC = 390 V, I C = 40 A R G =3.3Ω, V GE = 15V, Tj= 125°C(see Figure 18)42191900640ns ns A/µs µJSymbol ParameterTest ConditionsMin.Typ.Max.Unit t r (V off )Off Voltage Rise Time V cc = 390 V, I C = 40 A, R GE = 3.3 Ω , V GE = 15 V T J = 25 °C(see Figure 18)25ns t d (off )Turn-off Delay Time 140ns t f Current Fall Time 45nsE off (3)Turn-off Switching Loss 720970µJ E ts Total Switching Loss 10501420µJt r (V off )Off Voltage Rise Time V cc = 390 V, I C = 40 A, R GE = 3.3 Ω , V GE = 15 V Tj = 125 °C (see Figure 18)60ns t d (off )Turn-off Delay Time 170ns t f Current Fall Time 77nsE off (3)Turn-off Switching Loss 1400µJ E tsTotal Switching Loss2040µJSTGW40NC60V4/10Figure 3: Output CharacteristicsFigure 6: Transfer CharacteristicsSTGW40NC60VFigure 9: Normalized Breakdown Voltage vsFigure 12: Gate Charge vs Gate-Emitter Volt-age5/10STGW40NC60V6/10Figure 15: Thermal ImpedanceFigure 17: Ic vs Frequencycations, the typical collector current vs. maximum operating frequency curve is reported. That fre-quency is defined as follows:f MAX = (P D - P C ) / (E ON + E OFF )1) The maximum power dissipation is limited by maximum junction to case thermal resistance: P D = ∆T / R THJ-Cconsidering ∆T = T J - T C = 125 °C- 75 °C = 50°C 2) The conduction losses are:P C = I C * V CE(SAT) * δwith 50% of duty cycle, V CESAT typical value @125°C.3) Power dissipation during ON & OFF commuta-tions is due to the switching frequency: P SW = (E ON + E OFF ) * freq.4) Typical values @ 125°C for switching losses are used (test conditions: V CE = 390V, V GE = 15V,R G = 3.3 Ohm). Furthermore, diode recovery en-ergy is included in the E ON (see note 2), while the tail of the collector current is included in the E OFF measurements (see note 3).7/10STGW40NC60VFigure 18: Test Circuit for Inductive Load SwitchingFigure 19: Switching WaveformsFigure 20: Gate Charge Test CircuitSTGW40NC60V8/10STGW40NC60V Table 10: Revision HistoryDate Revision Description of Changes 13-Jul-20049Stylesheet update. No content change14-Jul-200410Some datas have been updated9/10STGW40NC60VInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.10/10。
IXSH35N120A;中文规格书,Datasheet资料
1250
18
TJ = 125°C
IC = 35A
1000
17
tfi
750
16
Eoff - millijoules tfi - nanoseconds
500
10
Eoff
250 0
5 10 20 30 40 50 60 70
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
W RG = 2.7
dV/dt < 5V/ns
1
0.1
0.01 0
200 400 600 800 1000 1200 VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1 D=0.2 D=0.1
D=0.05 D=0.02 0.01 D=0.01
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
70
A
35
A
140
A
ICM = 70
A
@ 0.8 VCES
10
ms
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BVCES V
GE(th)
I
CES
10
9
TJ = 25°C
8
7
6
5
IC = 70A
40n60npfd的参数
40n60npfd 参数详解介绍在电子元器件的领域里，40N60N是一种非常常见的功率MOSFET。
它是一款高压、高性能的功率场效应晶体管，被广泛应用于各种电源和驱动电路中。
本文将对40N60NPFD的参数进行详细解析，并讨论其在实际应用中的影响和意义。
40N60NPFD 参数最大额定值•Vds（Drain-source Voltage）：600V•Id（Drain Current）：40A•Rds(on)（静态导通电阻）：0.25Ω•Qgs（Gate-source Charge）：46nC•Qgd（Gate-drain Charge）：90nC•Qg（Total Gate Charge）：140nC•t(on)（开启时间）：19ns•t(off)（关闭时间）：110ns解读与分析Vds（漏极源极电压）Vds是指在正常工作条件下，MOSFET漏极与源极之间的最大电压。
对于40N60NPFD 来说，其最大额定值为600V。
这意味着该器件可以承受高达600V的电压，在高压应用场景中非常有用。
Id（漏极电流）Id是指通过MOSFET的漏极电流。
40N60NPFD的最大额定值为40A，这意味着它可以承受高达40A的电流。
这使得该器件非常适合用于高功率应用，如电源和驱动电路。
Rds(on)（静态导通电阻）Rds(on)是指MOSFET在导通状态下的电阻值。
对于40N60NPFD来说，其Rds(on)为0.25Ω。
较低的Rds(on)意味着在导通状态下，MOSFET会有更小的功耗和更高的效率。
Qgs（栅源电荷）Qgs是指栅极与源极之间的电荷量。
对于40N60NPFD来说，其Qgs为46nC。
Qgs越小，MOSFET开关速度越快，能够更快地响应控制信号。
Qgd（栅漏电荷）Qgd是指栅极与漏极之间的电荷量。
对于40N60NPFD来说，其Qgd为90nC。
较小的Qgd可以减少开关过程中产生的噪声和损耗。
Qg（总栅源电荷）Qg是指总共需要从控制信号中提供给MOSFET栅极的电荷量。
FGH40N60UFDTU;中文规格书,Datasheet资料
©2009 Fairchild Semiconductor Corporation
1
FGH40N60UFD Rev. C1
C
G
E
Ratings 600 ± 20 80 40 120 40 20 80 290 116
-55 to +150 -55 to +150
300
Units V V A A A A A A
W W oC oC
oC
Typ.
-
Max.
0.43 1.45 40
Units
oC/W oC/W oC/W
/
FGH40N60UFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
TC = 25oC TC = 125oC TC = 25oC TC = 125oC
Min.
-
Typ.
1.95 1.85 45 140 75 375
Max
2.6 -
Units
V ns nC
FGH40N60UFD Rev. C1
3
/
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC TC = 125oC
trr Qrr
Diode Reverse Recovery Time
IES =20A, dIES/dt = 200A/µs Diode Reverse Recovery Charge
FGH40N60UFD 600V, 40A Field Stop IGBT
IHW40N60R中文资料
100
U, l-m
4; .Z: Z:
100 80 60 40 20 0 10 100 1000 1E+4 1E+5 1E+6
..
j
j
10
.
Z: Z: .5: .
6
0.1
a$&7"
> F*
) ,0 a UbjU, k l)`m
1
1ccU
10
1
U
U
100
1c -0U l m I
6
元器件交易网
IHW40N60R
IH-series
3
UC[[
3
UC[[
) ,0 U,U 0k c1FFUF l5em
2
) ,0 U,U 0k c1FFUF l5em
2
1
1
U F*
0
U F*
0
20
1ccU
1
40
j
U, l-m
60
80
0
0
10
A 0- U UF F 1 l\m
Value Unit min. typ. max.
/ . a
bA c
A
% . %)
2
元器件交易网
IHW40N60R
IH-series
F?$4(N$%& N!"!(4 "$:4$( %87(4$ c2!8 !4
Parameter IGBT Characteristic
7"% 2>> 8 3! 4$5 a!33 4$5 7"% 2>> % "&
20
30
40
IXGH40N120B2D1;IXGT40N120B2D1;中文规格书,Datasheet资料
High Voltage IGBTs w/DiodeSymbol Test ConditionsMaximum RatingsV CES T C = 25°C to 150°C 1200 V V CGR T J = 25°C to 150°C, R GE = 1M Ω 1200 V V GES Continuous ± 20 V V GEM Transient± 30V I C25T C = 25°C (Limited by Lead) 75 A I C110T C = 110°C 40 A I F110T C = 110°C25 A I CMT C = 25°C, 1ms200ASSOA V GE = 15V, T VJ = 125°C, R G = 2Ω I CM = 80 A (RBSOA)Clamped Inductive Load @ 0.8 ≤ V CES V P C T C = 25°C380W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10 seconds260°C M d Mounting Torque (TO-247) 1.13/10 Nm/lb.in.WeightTO-247 6 g TO-2684gIXGH40N120B2D1IXGT40N120B2D1Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max.V GE(th) I C = 250μA, V CE = V GE 3.05.0 VI CES V CE = V CES, V GE = 0V100 μA TJ = 125°C3 mA I GES V CE = 0V, V GE = ± 20V ±100 nAV CE(sat)I C = 40A, V GE = 15V, Note 12.93.5VV CES = 1200V I C110= 40A V CE(sat)≤ 3.5V FeatureszInternational Standard Packages zIGBT and Anti-Parallel FRED for Resonant Power Supplies - Induction Heating - Rice Cookers zSquare RBSOA zFast Recovery Expitaxial Diode (FRED)- Soft Recovery with Low I RMAdvantagesz High Power DensityzLow Gate Drive RequirementG = Gate C = Collector E = Emitter TAB = CollectorTO-247 (IXGH)G CETO-268 (IXGT)GEt fi(typ) = 140ns© 2009 IXYS CORPORATION, All RrightsRreservedIXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.Fig. 23.Peak reverse current IRMversus -diF/dtFig. 22.Reverse recovery charge Qrversus -diF/dtFig. 21.Forward current IFversus VFQrIRMFig. 24.Dynamic parameters Qr, IRMversus TVJFig. 25.Recovery time trrversus -diF/dt Fig. 26.Peak forward voltage VFRandtfrversus diF/dtFig. 27.Transient thermal resistance junction to case2006001000040080060708090040801201600.00.51.01.52.0KfTVJ°C-diF/dt0200400600800100051015200.000.250.500.751.00FRdiF/dtV2006001000040080051015202530100100020040060080010000123102030405060IRMQrIFAVF-diF/dt-diF/dtA/μsAVnCA/μs A/μstrrns tfrA/μsμs分销商库存信息:IXYSIXGH40N120B2D1IXGT40N120B2D1。
40n60场效应管参数
40N60场效应管参数1. 引言场效应管（Field-Effect Transistor，简称FET）是一种重要的电子器件，常用于放大、开关和调节电压等应用。
40N60是一款常见的场效应管型号，本文将详细介绍40N60场效应管的参数。
2. 40N60场效应管概述40N60是一款功率型场效应管，属于N沟道MOSFET（Metal-Oxide-Semiconductor Field-Effect Transistor）类型。
它具有低导通电阻、高开关速度和耐压能力强等特点，适用于高频开关电路、功率放大器和逆变器等电路设计。
3. 参数解读3.1 额定参数•额定电流（ID）：40A•额定电压（VDSS）：600V•额定功率（PD）：300W•典型导通电阻（RDS(on)）：0.09Ω•典型栅极驱动电压（VGS(th)）：3.0V额定参数指在正常工作条件下，设备可以可靠工作的最大值或典型值。
3.2 导通特性导通特性是指场效应管在导通状态下的性能指标。
•静态导通电阻（RDS(on)）：0.09Ω 静态导通电阻是指场效应管在导通状态下，栅极与源极之间的电压差为标称值时的电流和电压之比。
RDS(on)越小，表示场效应管导通时的损耗越小。
•最大漏极电流（ID(max)）：40A 最大漏极电流是指场效应管在正常工作条件下，可以承受的最大漏极电流。
超过该值可能会导致场效应管过热甚至损坏。
•最大功率耗散（PD(max)）：300W 最大功率耗散是指场效应管可以承受的最大功率。
超过该值可能会导致场效应管过热甚至损坏。
3.3 关断特性关断特性是指场效应管在关断状态下的性能指标。
•关断时间（t(off)）：45ns 关断时间是指场效应管从导通到关断所需的时间。
关断时间越短，表示场效应管能够更快地切换到关断状态。
•最大栅极驱动电压（VGS(max)）：±30V 最大栅极驱动电压是指场效应管可以承受的最大栅极驱动电压。
超过该值可能会导致场效应管损坏。
40n60场效应管参数
40n60场效应管参数摘要：I.引言- 场效应管简介- 40n60 场效应管参数的重要性II.40n60 场效应管参数详解- 漏极电压(Vds)- 源极电压(Vgs)- 栅极电流(Ig)- 耗尽模式与增强模式III.40n60 场效应管的应用领域- 电源管理- 通信设备- 汽车电子- 工业控制IV.结论- 40n60 场效应管参数对于电子设备性能的影响- 未来发展趋势与挑战正文：I.引言场效应管（FET）是一种半导体器件，广泛应用于各种电子设备中。
在众多场效应管型号中，40n60 场效应管因为其优良的性能而受到广泛关注。
了解40n60 场效应管的参数对于正确选择和使用该型号器件至关重要。
本文将详细介绍40n60 场效应管的主要参数，并探讨其在不同领域的应用。
II.40n60 场效应管参数详解1.漏极电压(Vds)漏极电压是指在漏极和源极之间的电压。
40n60 场效应管的Vds 参数决定了其能够承受的最大电压。
在实际应用中，根据电路需求选择合适的Vds 值可以保证场效应管的正常工作。
2.源极电压(Vgs)源极电压是指在源极和栅极之间的电压。
40n60 场效应管的Vgs 参数影响了栅极对源极的导电能力。
合适的Vgs 值能够确保场效应管具有较高的导电性能。
3.栅极电流(Ig)栅极电流是指流过栅极的电流。
40n60 场效应管的Ig 参数反映了器件的驱动能力。
在选择器件时，需要根据实际应用场景选择合适的Ig 值。
4.耗尽模式与增强模式40n60 场效应管有两种工作模式：耗尽模式和增强模式。
耗尽模式下，漏极电压较低，源极电压较高；增强模式下，漏极电压较高，源极电压较低。
根据不同应用场景的需求，选择合适的工作模式能够优化器件性能。
III.40n60 场效应管的应用领域1.电源管理40n60 场效应管在电源管理领域具有广泛应用，如用于开关电源、线性稳压器等。
其优良的性能可以有效提高电源系统的效率和稳定性。
2.通信设备在通信设备中，40n60 场效应管可用于放大、开关等功能。
40n60场效应管参数
40n60场效应管参数40N60场效应管是一种常见的功率场效应管，具有很多重要的特性和应用。
它的特点包括高电流承受能力、低导通电阻和低开启电压等。
下面将详细介绍这些特性及其应用。
高电流承受能力是40N60场效应管的一大特点。
它能够承受较大的电流，使其在功率放大电路中起到关键作用。
例如，在音频放大器中，40N60场效应管能够承受较大的音频信号电流，从而实现音频信号的放大。
此外，在电源管理电路中，40N60场效应管也能够承受较大的电流，稳定地提供电源输出。
低导通电阻是另一个重要的特性。
40N60场效应管的导通电阻很低，使其能够在电路中提供较小的电压降。
这对于功率放大电路非常重要，因为它可以减少功率损耗并提高电路的效率。
此外，低导通电阻还能够减少电路中的热量产生，提高电路的稳定性。
低开启电压是40N60场效应管的另一个特点。
开启电压是指场效应管开始导通所需的最小电压。
由于40N60场效应管的开启电压较低，它能够在低电压条件下开始导通，提供稳定的功率输出。
这在一些对电压要求较低的电路中尤为重要，例如在电池供电的设备中。
除了以上特性，40N60场效应管还有其他一些重要的应用。
例如，在电源开关电路中，40N60场效应管可以用作开关管，控制电源的开关状态。
此外，它还可以用于电动汽车的驱动电路，提供高效率的功率放大。
40N60场效应管是一种具有高电流承受能力、低导通电阻和低开启电压等特点的功率场效应管。
它在各种电路中有着重要的应用，如音频放大器、电源管理电路、电源开关电路和电动汽车的驱动电路等。
它的特性使得电路能够实现高效率、稳定性和可靠性。
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© 2004 IXYS All rights reserved
DS98803B(03/04)
V CES =600 V I C25
=75 A V CE(sat)
= 2.7 V t fi(typ)
=75ns
HiPerFAST TM IGBT ISOPLUS247TM
(Electrically Isolated Backside)
ISOPLUS 247
G = Gate,
C = Collector
E = Emitter
* Patent pending
E153432
Symbol Test Conditions Maximum Ratings
V CES T J = 25°C to 150°C
600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ±20V V GEM Transient ±30V I C25T C = 25°C 75A I C110T C = 110°C 35A I CM
T C = 25°C, 1 ms
150A SSOA V GE = 15 V, T VJ = 125°C, R G = 10 Ω I CM = 80A (RBSOA)Clamped inductive load @ 0.8 V CES
P C T C = 25°C
200
W T J -55 ... +150
°C T JM 150
°C T stg
-55 ... +150
°C Maximum lead temperature for soldering 300
°C
1.6 mm (0.062 in.) from case for 10 s M d Mounting torque (M3)
1.13/10Nm/lb.in.
Weight 5
g
Isolated Backside*
Symbol
Test Conditions Characteristic Values
(T J = 25
°C, unless otherwise specified)
Min.Typ.Max.BV CES I C = 250 µA, V GE = 0 V 40N60C 600V I C = 750 µA
40N60CD1600V GE(th)I C = 250 µA, V CE = V GE 40N60C 2.5 5.0V I C
= 500 µA
40N60CD1 2.5
5.0V I CES
V CE = 0.8 • V CES T J = 25°C 40N60C 200µA V GE = 0 V; note 1T J = 25°C
40N60CD1650µA T J = 125°C 40N60C 1mA T J = 125°C
40N60CD1
3mA I GES V CE = 0 V, V GE = ±20 V ±100nA V CE(sat)
I C
= I T , V GE = 15 V
2.5
2.7
V
Features
z DCB Isolated mounting tab z Meets TO-247AD package Outline z High current handling capability z Latest generation HDMOS TM process z
MOS Gate turn-on -drive simplicity
Applications
z Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode power supplies z
AC motor speed control
z DC servo and robot drives z
DC choppers
Advantages
z Easy assembly z High power density
z
Very fast switching speeds for high frequency applications
IXGR 40N60C
IXGR 40N60CD1(D1)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,0724,931,8445,034,796 5,063,3075,237,4815,381,025 6,404,065B16,162,6656,534,3436,583,505 of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B16,306,728B16,683,344
Symbol
Test Conditions
Characteristic Values
(T
= 25°C, unless otherwise specified)
Note: 1. Pulse test, t p ≤ 300 ms, duty cycle:d ≤ 2 %
2. I T = 40A
分销商库存信息: IXYS
IXGR40N60C。