FAIRCHILD FDP51N25 FDPF51N25 说明书

FDP51N25 / FDPF51N25 250V N-Channel MOSFET D
G S
FDP51N25 / FDPF51N25 250V N-Channel MOSFET
Package Marking and Ordering Information
Electrical Characteristics T C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 0.68mH, I AS = 51A, V DD = 50V, R G = 25Ω, Starting T J = 25°C
3. I SD ≤ 51A, di/dt ≤ 200A/μs, V DD ≤ BV DSS , Starting T J = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP51N25FDP51N25TO-220--50FDPF51N25
FDPF51N25
TO-220F
-
-
50
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250μA, T J = 25°C 250----V ΔBV DSS / ΔT J Breakdown Voltage Temperature Coefficient
I D = 250μA, Referenced to 25°C --0.25--V/°C I DSS Zero Gate Voltage Drain Current V DS = 250V, V GS = 0V V DS = 200V, T C = 125°C --------110μA μA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On Characteristics
V GS(th)Gate Threshold Voltage V DS = V GS , I D = 250μA 3.0-- 5.0V R DS(on)Static Drain-Source On-Resistance
V GS = 10V, I D = 25.5A
--0.0480.060Ωg FS Forward Transconductance V DS = 40V, I D = 25.5A (Note 4)--43--S Dynamic Characteristics
C iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz
--26203410pF C oss Output Capacitance
--530690pF C rss Reverse Transfer Capacitance --
6390pF Switching Characteristics
t d(on)Turn-On Delay Time V DD = 125V, I D = 51A R G = 25Ω
(Note 4, 5)
--62135ns t r Turn-On Rise Time --465940ns t d(off)Turn-Off Delay Time --98205ns t f Turn-Off Fall Time --130270ns Q g Total Gate Charge V DS = 200V, I D = 51A V GS = 10V
(Note 4, 5)
--5570nC Q gs Gate-Source Charge --16--nC Q gd Gate-Drain Charge
--27--nC Drain-Source Diode Characteristics and Maximum Ratings
I S Maximum Continuous Drain-Source Diode Forward Current ----51A I SM Maximum Pulsed Drain-Source Diode Forward Current ----204A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 51A
---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 51A
dI F /dt =100A/μs (Note 4)
--178--ns Q rr
Reverse Recovery Charge
--
4.0
--μC
Unclamped Inductive Switching Test Circuit & Waveforms
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2.
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Datasheet Identification Product Status Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
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FDP51N25 / FDPF51N25 250V N-Channel MOSFET。