PASSIVATION FILM FOR SEMICONDUCTOR
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申请人：TORAY IND INC
更多信息请下载全文后查看ຫໍສະໝຸດ 专利内容由知识产权出版社提供
专利名称：PASSIVATION FILM FOR SEMICONDUCTOR 发明人：TOMIKAWA MASAO,KUSANO
KAZUTAKA,EGUCHI MASUICHI 申请号：JP27270589 申请日：19891018 公开号：JPH03133162A 公开日：19910606
摘要：PURPOSE:To prevent the increase of leak current, the corrosion of wiring, and the generation of a crack in an interlayer insulating film, by using polyimide having a specified structure as a passivation film. CONSTITUTION:Structure of polyimide is set as follows; the peak of main dispersion generated as the peak of loss elastic moldulus corresponding with glass transition point by dynamic viscoelasticity measurement is not generated at 400 deg.C or lower, and the peak of subdispersion appearing as the peak of loss elastic modulus from 0 deg.C to 250 deg.C is not generated. The peak value of tan deltaexpressed by the ratio of los elastic modulus/storage elastic modulus is set equal to or lower than 0.05. That is, the movement of main chain of polyimide is restrained up to a temperature of 400 deg.C, and further the partial movement of polyimide is restrained up to a temperature of 250 deg.C, so that the growth of a hillock generated when the temperature of aluminum is increased is restrained, and the movement of ion component and wafer content is prevented. Thereby the increase of leak current and the corrosion of aluminum wiring can effectively be prevented.
更多信息请下载全文后查看ຫໍສະໝຸດ 专利内容由知识产权出版社提供
专利名称：PASSIVATION FILM FOR SEMICONDUCTOR 发明人：TOMIKAWA MASAO,KUSANO
KAZUTAKA,EGUCHI MASUICHI 申请号：JP27270589 申请日：19891018 公开号：JPH03133162A 公开日：19910606
摘要：PURPOSE:To prevent the increase of leak current, the corrosion of wiring, and the generation of a crack in an interlayer insulating film, by using polyimide having a specified structure as a passivation film. CONSTITUTION:Structure of polyimide is set as follows; the peak of main dispersion generated as the peak of loss elastic moldulus corresponding with glass transition point by dynamic viscoelasticity measurement is not generated at 400 deg.C or lower, and the peak of subdispersion appearing as the peak of loss elastic modulus from 0 deg.C to 250 deg.C is not generated. The peak value of tan deltaexpressed by the ratio of los elastic modulus/storage elastic modulus is set equal to or lower than 0.05. That is, the movement of main chain of polyimide is restrained up to a temperature of 400 deg.C, and further the partial movement of polyimide is restrained up to a temperature of 250 deg.C, so that the growth of a hillock generated when the temperature of aluminum is increased is restrained, and the movement of ion component and wafer content is prevented. Thereby the increase of leak current and the corrosion of aluminum wiring can effectively be prevented.