2SA0879R资料
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16 14 12 10 8 6 4 2 0 −1 VCB = −10 V f = 100 MHz Ta = 25°C
Cob VCB
f = 1 MHz IE = 0 Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
Base current IB (mA)
−10
−1.6
−80
−1.2
−60
−1 25°C −25°C Ta = 75°C
− 0.8
−40
− 0.1
− 0.4
−20
0
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
−1.2
0
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
− 0.01 − 0.1
Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −50 mA, IB = −5 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz
250
120 100 80 60 40 20
200 Ta = 75°C 150 25°C −25°C
100
500 − 0.1−1来自−10−100
0 0.1
1
10
100
−10
−100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C
1
1
0
40
80
120
160
200
0
40
80
120
160
200
− 0.1 −1
−10
−100
−1 000
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
SJC00006BED
3
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio
*
Symbol VCEO VEBO hFE VCE(sat) fT Cob
Min −200 −5 60
(3.2)
Typ
Max
Unit V V V MHz pF
220 −1.5
Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
−1
−10
−100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
300 VCE = −10 V
160 140
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
Collector power dissipation PC (W)
1.0
−100
−100
Collector current IC (mA)
Collector current IC (mA)
0.8
−80
−80
0.6
−60
−60
0.4
−40
−40
0.2
−20
− 0.2 mA
−20
0
0
20
40
60
80 100 120 140 160
0
0
−2
−4
−6
−8
−10
0
0
− 0.4 − 0.8 −1.2
−1.6
−2.0
−2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
IB VBE
−2.4 −120 VCE = −10 V Ta = 25°C −100
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00006BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2
SJC00006BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0879
IEBO Ta
10 000 VEB = −5 V
10000
ICBO Ta
VCB = −250 V
−1 000
Safe operation area
1 2 3 0.45+0.2 –0.1 (1.27)
13.5±0.5
0.45+0.2 –0.1 (1.27)
8.6±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
50
80 5 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 150 R 100 to 220
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE = −10 V 25°C Ta = 75°C −25°C −100
VCE(sat) IC
IC / IB = 10
−2.0
Collector current IC (mA)
Single pulse Ta = 25°C ICP IC t=1s −10 t = 10 ms
1 000
1000
100
100
Collector current IC (mA)
−100
IEBO (Ta) IEBO (Ta = 25°C)
ICBO (Ta) ICBO (Ta = 25°C)
10
10
−1
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
Cob VCB
f = 1 MHz IE = 0 Ta = 25°C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
Base current IB (mA)
−10
−1.6
−80
−1.2
−60
−1 25°C −25°C Ta = 75°C
− 0.8
−40
− 0.1
− 0.4
−20
0
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
−1.2
0
0
− 0.4
− 0.8
−1.2
−1.6
−2.0
− 0.01 − 0.1
Conditions IC = −100 µA, IB = 0 IE = −1 µA, IC = 0 VCE = −10 V, IC = −5 mA IC = −50 mA, IB = −5 mA VCB = −10 V, IE = 10 mA, f = 200 MHz VCB = −10 V, IE = 0, f = 1 MHz
250
120 100 80 60 40 20
200 Ta = 75°C 150 25°C −25°C
100
500 − 0.1−1来自−10−100
0 0.1
1
10
100
−10
−100
Collector current IC (mA)
Emitter current IE (mA)
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C
1
1
0
40
80
120
160
200
0
40
80
120
160
200
− 0.1 −1
−10
−100
−1 000
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
SJC00006BED
3
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Forward current transfer ratio
*
Symbol VCEO VEBO hFE VCE(sat) fT Cob
Min −200 −5 60
(3.2)
Typ
Max
Unit V V V MHz pF
220 −1.5
Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited)
−1
−10
−100
Base-emitter voltage VBE (V)
Base-emitter voltage VBE (V)
Collector current IC (mA)
hFE IC
300 VCE = −10 V
160 140
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
Collector power dissipation PC (W)
1.0
−100
−100
Collector current IC (mA)
Collector current IC (mA)
0.8
−80
−80
0.6
−60
−60
0.4
−40
−40
0.2
−20
− 0.2 mA
−20
0
0
20
40
60
80 100 120 140 160
0
0
−2
−4
−6
−8
−10
0
0
− 0.4 − 0.8 −1.2
−1.6
−2.0
−2.4
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Base current IB (mA)
IB VBE
−2.4 −120 VCE = −10 V Ta = 25°C −100
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00006BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2
SJC00006BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA0879
IEBO Ta
10 000 VEB = −5 V
10000
ICBO Ta
VCB = −250 V
−1 000
Safe operation area
1 2 3 0.45+0.2 –0.1 (1.27)
13.5±0.5
0.45+0.2 –0.1 (1.27)
8.6±0.2
2.54±0.15
1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
50
80 5 10
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 60 to 150 R 100 to 220
IC VBE
Collector to emitter saturation voltage VCE(sat) (V)
VCE = −10 V 25°C Ta = 75°C −25°C −100
VCE(sat) IC
IC / IB = 10
−2.0
Collector current IC (mA)
Single pulse Ta = 25°C ICP IC t=1s −10 t = 10 ms
1 000
1000
100
100
Collector current IC (mA)
−100
IEBO (Ta) IEBO (Ta = 25°C)
ICBO (Ta) ICBO (Ta = 25°C)
10
10
−1
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.