FAIRCHILD 74VHC00 说明书
合集下载
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
4
74VHC00
Ordering Code:
Order Number
Package Number
Package Description
74VHC00M
M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow
74VHC00MX_NL
1.0
13.0
CL 50 pF
3.7
5.5
1.0
6.5
ns
CL 15 pF
5.2
7.5
1.0
8.5
CL 50 pF
4
10
10
pF VCC Open
19
pF (Note 5)
Note 5: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained from the equation: ICC (opr.) CPD * VCC * fIN ICC/4 (per gate).
V
IOL 4 mA
IOL 8 mA
PA VIN 5.5V or GND
PA VIN VCC or GND
Noise Characteristics
Symbol
Parameter
VOLP (Note 4) VOLV (Note 4) VIHD (Note 4)
Quiet Output Maximum Dynamic VOL Quiet Output Minimum Dynamic VOL Minimum HIGH Level Dynamic Input Voltage
M14A Pb-Free 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow
74VHC00SJ
M14D Pb-Free 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide
Absolute Maximum Ratings(Note 2)
Supply Voltage (VCC) DC Input Voltage (VIN) DC Output Voltage (VOUT) Input Diode Current (IIK) Output Diode Current (IOK) DC Output Current (IOUT) DC VCC/GND Current (ICC) Storage Temperature (TSTG) Lead Temperature (TL)
Note 1: “_NL” indicates Pb-Free package (per JEDEC J-STD-020B). Device available in Tape and Reel only.
Logic Symbol
Connection Diagram
IEEE/IEC
Pin Descriptions
74VHC00MTC
MTC14 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide
74VHC00MTCX_NL MTC14 Pb-Free 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm
3
74VHC00
Physical Dimensions inches (millimeters) unless otherwise noted
14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow Package Number M14A
0.8
V
CL 50 pF
5.0
3.5
V
CL 50 pF
5.0
1.5
V
CL 50 pF
2
74VHC00
AC Electrical Characteristics
Symbol
Parameter
VCC
TA 25qC
TA 40qC to 85qC Units
Note 3: Unused inputs must be held HIGH or LOW. They may not float.
DC Electrical Characteristics
Symbol
Parameter
VCC
(V)
VIH
HIGH Level
Input Voltage
2.0 3.0 5.5
Pin Names An, Bn On
Description Inputs Outputs
Truth Table
A L L H H
© 2005 Fairchild Semiconductor Corporation DS011504
B
O
L
H
H
H
L
H
H
L
74VHC00
0 ns/V a 100 ns/V 0 ns/V a 20 ns/V
Note 2: Absolute Maximum Ratings are values beyond which the device may be damaged or have its useful life impaired. The databook specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. Fairchild does not recommend operation outside databook specifications.
Supply Voltage (VCC) Input Voltage (VIN)
2.0V to 5.5V 0V to 5.5V
Output Voltage (VOUT) Operating Temperature (TOPR)
0V to VCC 40qC to 85qC
Input Rise and Fall Time (tr, tf) VCC 3.3V r 0.3V VCC 5.0V r 0.5V
Min
Max
1.50
0.7 VCC
0.50
0.3 VCC 1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
r1.0
20.0
Units
Conditions
V
V
VIN VIH IOH 50 PA
V
or VIL
V
IOH 4mA
IOH 8mA
VIN VIH IOL 50 PA
V
or VIL
(Note 1)
Wide
74VHC00N
N14A 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300" Wide
Devices also available on Tape and Reel. Specify by appending the suffix letter “X” to the ordering code. Pb-Free package per JEDEC J-STD-020B.
VILD (Note 4)
Maximum LOW Level Dynamic Input Voltage
Note 4: Parameter guaranteed by design
VCC
TA 25qC
Units
(V)
Typ
Limit
Conditions
5.0
0.3
0.8
V
CL 50 pF
5.0
0.3
ICC
Quiescent Supply Current 5.5
Min 1.50 0.7 VCC
1.9 2.9 4.4 2.58 3.94
TA 25qC Typ
2.0 3.0 4.5
0.0 0.0 0.0
Max
0.50 0.3 VCC
0.1 0.1 0.1 0.36 0.36 r0.1 2.0
TA 40qC to 85qC
(V)
Min
Typ
Max
Min
Max
Conditions
tPLH
Propagation
tPHL
Delay
CIN
Input Capacitance
CPD
Power Dissipation
Capacitance
3.3 r 0.3 5.0 r 0.5
5.5
7.9
1.0
9.5
ns
CL 15 pF
8.0
11.4
74VHC00 Quad 2-Input NAND Gate
October 1992 Revised February 2005
74VHC00 Quad 2-Input NAND Gate
General Description
The VHC00 is an advanced high-speed CMOS 2-Input NAND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including buffer output, which provide high noise immunity and stable output. An input protection circuit insures that 0V to 7V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5V to 3V systems and two supply systems such as battery backup. This circuit prevents device destruction due to mismatched supply and input voltages.
VILLOW ຫໍສະໝຸດ evelInput Voltage
2.0 3.0 5.5
VOH
HIGH Level
2.0
Output Voltage
3.0
4.5
3.0
4.5
VOL
LOW Level
2.0
Output Voltage
3.0
4.5
3.0
4.5
IIN
Input Leakage Current
0 5.5
(Soldering, 10 seconds)
0.5V to 7.0V 0.5V to 7.0V 0.5V to VCC 0.5V
20 mA r20 mA r25 mA r50 mA 65qC to 150qC
260qC
Recommended Operating Conditions (Note 3)
Features
s High Speed: tPD 3.7ns (typ) at TA 25qC s High noise immunity: VNIH VNIL 28% VCC (min) s Power down protection is provided on all inputs s Low noise: VOLP 0.8V (max) s Low power dissipation: ICC 2 PA (max) at TA 25qC s Pin and function compatible with 74HC00