2SK2013中文资料
2SK1937-01中文资料
2SK1937-01
FAP-IIA Series
> Features
- High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof
↑
7
↑
8
↑↑
9
VGS [V] IF [A]
VDS [V]
C [nF]
→ VDS [V]
Allowable Power Dissipation vs. TC
↑
பைடு நூலகம்10
↑
→ Qg [nC]
Safe operation area
↑
12
Zth(ch-c) [K/W]
→ VSD [V]
Transient Thermal impedance
tf
RGS=10 Ω
Avalanche Capability
I AV
L = 100µH Tch=25°C
Continous Reverse Drain Current
I DR
Pulsed Reverse Drain Current
I DRM
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
> Applications
- Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier
2SK1316中文资料
2SK1315(L)(S), 2SK1316(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures• Low on-resistance• High speed switching• Low drive current• No secondary breakdown• Suitable for switching regulator, DC-DC converter and motor driverOutline2SK1315(L)(S), 2SK1316(L)(S)2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage 2SK1315V DSS450V2SK1316500Gate to source voltage V GSS ±30V Drain current I D8A Drain peak currentI D(pulse)*132A Body to drain diode reverse drain current I DR 8A Channel dissipation Pch*260W Channel temperature Tch 150°C Storage temperatureTstg –55 to +150°C Notes: 1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at T C = 25°C2SK1315(L)(S), 2SK1316(L)(S)3Electrical Characteristics (Ta = 25°C)ItemSymbol MinTyp Max Unit Test conditions Drain to source 2SK1315V (BR)DSS450——VI D = 10 mA, V GS = 0breakdown voltage2SK1316500Gate to source breakdown voltageV (BR)GSS ±30——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS——±10µA V GS = ±25 V, V DS = 0Zero gate voltage 2SK1315I DSS——250µA V DS = 360 V, V GS = 0drain current2SK1316V DS = 400 V, V GS = 0Gate to source cutoff voltage V GS(off)2.0—3.0V I D = 1 mA, V DS = 10 V Static Drain to source 2SK1315R DS(on)—0.550.7ΩI D = 4 A, V GS = 10 V *1on state resistance 2SK1316—0.600.8Forward transfer admittance|yfs| 4.57.5—S I D = 4 A, V DS = 10 V *1Input capacitance Ciss —1150—pF V DS = 10 V, V GS = 0,Output capacitanceCoss —340—pF f = 1 MHzReverse transfer capacitance Crss —55—pF Turn-on delay time t d(on)—17—ns I D = 4 A, V GS = 10 V,Rise timet r —55—ns R L = 7.5 ΩTurn-off delay time t d(off)—100—ns Fall timet f —45—ns Body to drain diode forward voltageV DF —0.9—V I F = 8 A, V GS = 0Body to drain diode reverse recovery time t rr—350—nsI F = 8 A, V GS = 0,di F /dt = 100 A/µs Note:1.Pulse testSee characteristic curves of 2SK1159, 2SK1160.2SK1315(L)(S), 2SK1316(L)(S)4Hitachi CodeJEDECEIAJWeight (reference value)LDPAK (L)——1.4 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
2SK系列场管参数
型号电压电流功率2SK1000N沟22V50mA250mW低频放场效应管2SK1001N沟22V50mA200mW低频放场效应管2SK1006N沟450V5A40W2SK1007N沟450V5A60W2SK1008N沟500V 4.5A60W2SK1009N沟450V7A80W2SK1010N沟500V6A80W2SK1011N沟450V10A100W2SK1012拆2SK1012N沟500V10A100W2SK1013N沟450V13A125W2SK1014N沟500V12A125W2SK1015N沟450V18A125W2SK1016N沟500V15A125W2SK1017N沟450V20A150W2SK1017拆N沟450V20A150W2SK1019N沟450V35A300W2SK1019拆N沟450V35A300W2SK1020N沟500V30A300W2SK1021N沟800V3A60W2SK1022N沟900V 2.5A60W2SK1023N沟800V4A60W2SK1024N沟900V 3.5A60W2SK1025N沟50V20A45W2SK1026N沟250V20A150W2SK1027N沟300V20A150W2SK1028N沟400V5A50W场效应开关管2SK1029N沟500V10A200W2SK1030AN沟900V3A50W2SK1030N沟800V3A50W2SK1031N沟50V10mA100mW低频放场效应管2SK1032AN沟900V8A120W2SK1032N沟800V8A120W2SK1033N沟60V15A45W2SK1034N沟100V15A45W2SK1035N沟150V12A45W2SK1036N沟250V10A50W2SK1037N沟250V50W场效应开关管2SK1038N沟400V5A50W2SK1039N沟400V8A50W2SK103-K2N沟20V0.02-0.040.08W场效应音频/高频放大管2SK103-L1N沟20V0.35-0.070.08W场效应音频/高频放大管2SK103-L2N沟20V0.06-0.120.08W场效应音频/高频放大管2SK103-M1N沟20V0.1-0.2mA0.08W场效应音频/高频放大管2SK103-M2N沟20V0.15-0.3m0.08W场效应音频/高频放大管2SK103-N1N沟20V0.27-0.540.08W场效应音频/高频放大管2SK103-N2N沟20V0.5-1mA0.08W场效应音频/高频放大管2SK103N沟20V10mA80mW通用型场效应管2SK1040N沟400V10A100W2SK1041N沟400V15A120W2SK1042N沟400V20A130W2SK1043N沟4V10mA200mW2SK1044N沟800V5A150W2SK1045N沟900V5A150W2SK1046N沟4V10mA200mW2SK1047N沟250V20A150W2SK1048N沟300V20A150W2SK1049N沟450V15A150W2SK104-EN沟30V0.5-1.5mA0.25W场效应音频/高频放大管2SK104-FN沟30V1-3mA0.25W场效应音频/高频放大管2SK104-HN沟30V2-6mA0.25W场效应音频/高频放大管2SK104-JN沟30V4-12mA0.25W场效应音频/高频放大管2SK104N沟30V10mA250mW低频放大场效应管2SK1050N沟500V15A150W2SK1051N沟50V40A120W2SK1052N沟450V0.5A30W2SK1053N沟450V1A40W2SK1056N沟120V7A100W2SK1057N沟140V7A100W2SK1058N沟160V7A100W2SK1059N沟60V5A20W场效应高频放大管2SK1059-ZN沟60V5A20W2SK105N沟50V10mA250mW低频放大场效应管2SK1060N沟100V5A20W2SK1060-ZN沟100V5A20W2SK1061N沟60V200mA300mW2SK1062N沟60V200mA300mW14/75ns2SK1063N沟450V15A125W2SK1064N沟500V15A125W2SK1065N沟20V10mA150mW2SK1066N沟15V10mA150mW场效应高频功率放大管2SK1067N沟16V30mA150mW2SK1068N沟40V10mA100mW通用型场效应管2SK1069N沟40V10mA150mW低频放大场效应管2SK106-AN沟50V0.5-1.5mA0.3W场效应音频(低频)管2SK106-BN沟50V1-3mA0.3W场效应音频(低频)管2SK106-CN沟50V2-6mA0.3W场效应音频(低频)管2SK106-DN沟50V4-12mA0.3W场效应音频(低频)管2SK106N沟10mA300mW低频放大场效应管2SK1070N沟22V50mA150mW低频放大场效应管2SK107-2N沟27V 2.7-5.5mA0.25W2SK1073N沟800V3A45W2SK107-3N沟27V 4.5-7.7mA0.25W2SK107-4N沟27V 6.3-9.9mA0.25W2SK107-5N沟27V8.1-12.1m0.25W2SK1078N沟60V0.8A500mW2SK1079N沟100V0.6A500mW2SK107N沟27V10mA250mW直接耦合放大/直流/甚高频场效应2SK1081N沟800V7A125W2SK1081拆N沟800V7A125W2SK1082拆N沟900V6A2SK1082N沟900V6A125W2SK1083N沟60V8A20W2SK1084N沟100V5A20W2SK1085N沟150V3A20W2SK1086N沟60V20A35W2SK1087N沟100V12A35W2SK1088N沟150V9A35W2SK1089N沟60V35A80W2SK108N沟50V10mA300mW2SK1090N沟100V20A80W2SK1091N沟150V15A80W2SK1092N沟4V150mA0.15W2SK1093N沟60V10A20W2SK1094N沟60V15A25W2SK1095N沟60V25A30W2SK1096N沟60V13A30W2SK1097N沟100V8A30W2SK1098N沟150V6A30W电机控制场效应管2SK109AN沟50V1-12mA0.3W2SK109N沟50V10mA150mW2SK1100N沟3V60mA200mW2SK1101N沟450V10A50W2SK1102N沟500V10A50W2SK1103N沟50V10mA200mW2SK1104N沟50V10mA300mW2SK1105N沟800V3A80W2SK1108N沟20V0.04-0.6m0.1W场效应前置/输入级管2SK1109N沟20V10mA80mW通用型场效应管2SK110N沟30V10mA900mW2SK1112N沟60V5A20W2SK1113N沟120V3A20W2SK1114N沟60V12A40W2SK1115N沟60V20A60W2SK1116N沟100V25A100W2SK1117拆N沟600V6A2SK1117N沟600V6A100W2SK1118拆N沟600V6A2SK1118N沟600V6A45W2SK111N沟30V10mA200mW 2SK1120N沟1000V8A150W 2SK1121N沟50V25A45W 2SK1122N沟100V40A100W 2SK1123N沟60V40A100W 2SK1124N沟60V45A125W 2SK112N沟50V10mA250mW 2SK112-ON沟50V3-9mA0.25W 2SK112-RN沟50V 1.2-3.6mA0.25W 2SK1132N沟50V0.02A0.25W 2SK1133N沟50V0.02A0.2W 2SK1134N沟50V45A80W 2SK1135N沟250V15A100W 2SK1136N沟50V10A30W 2SK1137N沟50V16A40W 2SK1138N沟150V7A30W 2SK1139N沟150V13A40W 2SK113N沟50V10mA250mW 2SK113-ON沟50V25-75mA0.25W 2SK113-RN沟50V5-30mA0.25W 2SK113-YN沟50V50-150mA0.25W 2SK1142N沟800V2A35W 2SK1143N沟900V2A35W 2SK1149N沟100V20A75W 2SK1150N沟60V40A75W 2SK1151LN沟450V 1.5A20W 2SK1151N沟450V 1.5A10W 2SK1151SN沟450V 1.5A20W 2SK1152LN沟500V 1.5A20W 2SK1152N沟500V 1.5A10W 2SK1152SN沟500V 1.5A20W 2SK1153N沟450V3A30W 2SK1154N沟500V3A30W 2SK1155N沟450V3A50W 2SK1156N沟500V3A50W 2SK1157N沟450V7A60W 2SK1158N沟500V7A60W 2SK1159N沟450V8A60W 2SK1160N沟500V8A60W 2SK1161N沟450V10A100W 2SK1162N沟500V10A100W 2SK1163N沟450V11A100W 2SK1164N沟500V11A100W 2SK1165N沟450V12A100W 2SK1166N沟500V12A100W 2SK1167N沟450V15A100W2SK1169N沟450V20A147/290ns2SK117拆N沟50V10mA2SK1170N沟500V20A120W2SK1171N沟800V4A80W2SK1172N沟900V 3.5A80W2SK1173N沟50V500mA200mW通用型场效应管2SK1177N沟500V 2.5A30W金属氧化物场效应功率放大管2SK1178N沟500V4A35W金属氧化物场效应功率放大管2SK1179N沟500V8.5A85W金属氧化物场效应功率放大管2SK117-BLN沟50V6-14mA0.3W2SK117-GRN沟50V 2.6-6.5mA0.3W2SK117N沟50V10mA300mW2SK117-ON沟50V0.6-1.4mA0.3W2SK117-YN沟50V 1.2-3mA0.3W2SK1180N沟500V10A85W金属氧化物场效应功率放大管2SK1181N沟500V13A85W金属氧化物场效应功率放大管2SK1183N沟200V3A25W金属氧化物场效应功率放大管2SK1184N沟200V5A30W金属氧化物场效应功率放大管2SK1185N沟100V5A25W金属氧化物场效应功率放大管2SK1186N沟100V9A30W金属氧化物场效应功率放大管2SK1187N沟100V12A35W金属氧化物场效应功率放大管2SK1188N沟60V10A25W金属氧化物场效应功率放大管2SK1189N沟60V15A30W金属氧化物场效应功率放大管2SK118N沟50V10mA100mW2SK118-ON沟50V0.6-1.4mA Nf=0.5dB场效应音频(低频)管2SK118-RN沟50V0.3-0.75m Nf=0.5dB场效应音频(低频)管2SK1190N沟60V22A35W金属氧化物场效应功率放大管2SK1191N沟60V30A40W金属氧化物场效应功率放大管2SK1192N沟60V40A90W金属氧化物场效应功率放大管2SK1194N沟230V0.5A6W2SK1195N沟230V15A10W2SK1196N沟5V20-70mA0.2W2SK1197N沟70V0.3A通用型场效应管2SK1198拆N沟700V2A2SK1198N沟700V2A35W2SK1199N沟900V2A70/125ns2SK119N沟30V10mA250mW直接耦合放大/直流场效应管2SK11N沟20V10mA100mW直接耦合放大/直流场效应管2SK11-ON沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK11-RN沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK11-YN沟20V0.3-6.5mA0.1W场效应直流/音频/斩波、2SK1200N沟900V3A80W2SK1201N沟900V4A80W2SK120-1N沟15V1-3mA0.2W2SK1202N沟900V5A100W2SK120-2N沟15V2-5mA0.2W2SK1204N沟900V8A100W2SK1205N沟1000V5A100W2SK1206N沟500V12A60W2SK120N沟15V10mA200mW2SK1211N沟800V 2.5A40W2SK121-1N沟30V0.9-3.3mA0.3W2SK1212N沟900V5A80W2SK121-2N沟30V 2.7-5.5mA0.3W2SK1213N沟600V6A125W2SK121-3N沟30V 4.5-9.9mA0.3W2SK1214N沟80V20A45W2SK121-4N沟30V 4.5-9.9mA0.3W2SK1215N沟20V30mA0.1W2SK121-5N沟30V8.1-14.3m0.3W2SK1216N沟10V50mA0.2W2SK121-6N沟30V8.1-14.3m0.3W2SK1217N沟900V8A100W2SK121N沟30V5mA300mW2SK1221N沟250V10A80W2SK1222N沟450V15A125W2SK1223N沟60V5A130W2SK1224N沟800V4A50W2SK1225N沟450V12A60W2SK1227N沟150V10mA100mW通用型场效应管2SK1228N沟50V50mA150mW2SK1229N沟4V60mA0.16W2SK122N沟15V30mA250mW2SK1230N沟120V10A25W2SK1231N沟450V5A30W2SK1232N沟500V5A30W2SK1233N沟6V20-90mA0.3W2SK1234N沟5V20-80mA0.27W2SK1235N沟6V20-90mA0.3W2SK1236N沟6V20-90mA0.3W2SK1237N沟5V20-80mA0.27W2SK1238N沟5V20-60mA0.27W2SK1239N沟5V20-60mA0.27W2SK123N沟20V 2.2mA200mW通用型场效应管2SK1240N沟4V10-60mA0.18W2SK1241N沟4V10-60mA0.18W2SK1242N沟4V10-60mA0.18W2SK1243N沟4V10-60mA0.18W2SK1244N沟500V3A40W2SK1245N沟500V3A25W2SK1246N沟500V5A50W2SK1247N沟500V5A30W2SK1249N沟500V15A100W2SK124N沟80V100mA0.5W2SK1250N沟500V20A100W2SK1251N沟60V5A30W2SK1252N沟120V3A10W2SK1253N沟30V30A35W2SK1254LN沟120V3A20W2SK1254N沟120V3A20W2SK1254SN沟120V3A20W2SK1255N沟60V5A30W2SK1256N沟60V10A40W2SK1257N沟60V40A45W2SK1258N沟60V50A100W2SK1259N沟60V100A150W2SK125N沟35V10mA300mW2SK1260N沟100V5A30W2SK1261N沟100V8A40W2SK1262N沟100V30A45W2SK1263N沟100V40A100W2SK1264N沟150V3A30W2SK1265N沟100V6A40W2SK1266N沟100V20A45W2SK1267N沟100V25A100W2SK1268N沟450V15A60W2SK1269N沟500V15A60W2SK1270N沟60V2A10W2SK1271N沟1400V3A150W2SK1272N沟60V0.5A0.75W2SK1273N沟60V0.5A2W2SK1274N沟60V0.5A1W2SK1275N沟900V2A30W2SK1276N沟250V20A100W2SK1277N沟250V30A150W2SK1278N沟500V10A100W2SK1279N沟500V15A125W2SK127AN沟80V0.5-12mA0.25W场效应音频(低频)管2SK127N沟50V20mA250mW低频放大场效应管2SK1280N沟500V18A150W2SK1281N沟700V2A120W2SK1282N沟60V2A20W2SK1283N沟60V2A20W2SK1284N沟100V2A20W2SK1285N沟100V2A20W2SK1286N沟60V8A35W2SK1287N沟60V8A60W2SK1288N沟100V8A35W2SK128N沟30V10mA250mW2SK1290N沟60V15A35W2SK1291N沟60V15A60W2SK1292N沟100V15A35W2SK1293N沟100V15A60W2SK1294N沟60V20A35W2SK1295N沟60V20A35W2SK1296N沟60V30A75W2SK1297N沟60V40A100W2SK1298N沟60V40A50W2SK1299LN沟100V3A20W2SK1299N沟100V3A20W2SK1299SN沟100V3A20W2SK12-GRN沟20V 2.5-5mA0.1W2SK12NN沟20V0.45-5mA0.1W2SK12N沟20V10mA100mW2SK12-ON沟20V0.8-1.6mA0.1W2SK12-PN沟20V5mA0.1W2SK12-RN沟20V0.45-0.9m0.1W2SK12-YN沟20V 1.4--2.8m0.1W2SK1300N沟100V10A40W2SK1301N沟100V15A50W2SK1302N沟100V20A50W2SK1303N沟100V30A100W2SK1304N沟100V40A100W2SK1305N沟100V10A25W2SK1306N沟100V15A30W2SK1307N沟100V20A35W2SK1308AN沟450V5A40W2SK1308N沟400V5A40W2SK130AN沟30mA250mW场效应低噪声放大管2SK130N沟30V10mA250mW低频放大场效应管2SK1311N沟60V2A 3.5W2SK1313LN沟450V5A50W2SK1313N沟450V5A50W2SK1313SN沟450V5A50W2SK1314LN沟500V5A50W2SK1314N沟500V5A50W2SK1314SN沟500V5A50W2SK1315LN沟450V8A60W2SK1315N沟450V8A60W2SK1315SN沟450V8A60W2SK1316LN沟500V8A60W2SK1316N沟500V8A60W2SK1316SN沟500V8A60W2SK1317N沟1500V 2.5A100W2SK1319N沟250V8A75W2SK1319SN沟250V8A75W2SK131N沟30V10mA250mW2SK1320N沟300V8A75W2SK1320SN沟300V8A75W2SK1321N沟450V5A75W2SK1321SN沟450V5A75W2SK1322N沟500V5A75W2SK1322SN沟500V5A75W2SK1323N沟800V2A75W2SK1323SN沟800V2A75W2SK1324N沟900V2A75W2SK1324SN沟900V2A75W2SK1325N沟6V40-120mA0.2W2SK1326N沟10V20mA通用型场效应管2SK1327LN沟600V1A20W2SK1327N沟600V1A20W2SK1327SN沟600V1A20W2SK1328N沟450V12A60W2SK1329N沟500V12A60W2SK132N沟100V7A100W低频放大场效应管2SK1330AN沟900V8A100W2SK1330N沟800V8A100W2SK1331N沟500V15A100W2SK1332N沟30V20mA150mW低频放大场效应管2SK1333N沟500V15A200W2SK1334N沟200V1A1W2SK1335LN沟200V3A20W2SK1335N沟200V3A20W2SK1335SN沟200V3A20W2SK1336N沟60V0.3A0.4W2SK1337N沟100V0.3A0.4W2SK1338N沟800V2A50W2SK1339N沟900V3A80W2SK133N沟120V7A100W低频放大场效应管2SK1340N沟900V5A100W2SK1341N沟900V7A100W2SK1342N沟900V8A100W2SK1344N沟60V12A30W2SK1345N沟60V20A40W2SK1346拆N沟60V25A2SK1346N沟60V25A40W2SK1347N沟100V20A75W2SK1348N沟100V20A40W2SK1349N沟100V20A45W2SK134HN沟140V7A100WMOS场效应音频/功率放大管2SK134N沟140V7A100W低频放大场效应管2SK1350N沟200V15A45W2SK1351N沟500V5A40W2SK1352N沟500V7A45W2SK1356N沟900V3A40W2SK1357N沟900V5A125W2SK1358N沟900V9A150W2SK1358拆N沟900V9A150W2SK1359N沟1000V5A125W2SK135N沟7A100W低频放大场效应管2SK1362N沟900V5A80W金属氧化物场效应开关管2SK1363N沟900V8A90W金属氧化物场效应开关管2SK1365N沟1000V7A90W金属氧化物场效应开关管2SK1366N沟400V2A30W金属氧化物场效应功率放大管2SK1367N沟400V3A30W金属氧化物场效应功率放大管2SK1368N沟400V5A30W金属氧化物场效应功率放大管2SK1369N沟400V10A85W金属氧化物场效应功率放大管2SK136N沟30V10mA250mW2SK1370N沟400V15A85W金属氧化物场效应功率放大管2SK1371N沟450V20A125W2SK1372N沟500V20A125W2SK1373N沟550V12A100W2SK1374N沟50V50mA0.15W2SK1375N沟20V0.14-0.5mA场效应前置/输入级管2SK1377N沟400V 5.5A40W2SK1378N沟400V10A125W2SK1379N沟60V50A150W2SK137AN沟15V40mA0.1W场效应音频(低频)管2SK137N沟15V50mA100mW低频放大场效应管2SK1380N沟60V60A200W2SK1381N沟100V60A150W2SK1382N沟100V60A200W2SK1383N沟200V3A8W2SK1384N沟800V5A80W2SK1385N沟800V9A100W2SK1386N沟450V7A100W2SK1387N沟60V35A40W2SK1388N沟30V35A60W2SK1389N沟60V50A125W2SK138N沟100mA300mW高频振荡场效应管2SK1390N沟60V50A80W2SK1391N沟250V6A40W2SK1392N沟250V6A25W2SK1393N沟250V10A50W2SK1394N沟250V10A30W2SK1395N沟250V20A100W2SK1396N沟250V30A120W2SK1398N沟50V0.1A0.25W2SK1399N沟50V0.1A0.2W2SK139N沟15V150W无线电视甚高频场效应管2SK13-GRN沟12V 2.5-5mA0.1W2SK13N沟12V10mA100mW2SK13-ON沟12V0.8-1.6mA0.1W2SK13-RN沟12V0.45-5mA0.1W2SK13-YN沟12V 1.4-2.8mA0.1W2SK1400AN沟350V7A50W2SK1400N沟300V7A50W2SK1401AN沟350V15A100W2SK1401N沟300V15A100W2SK1402AN沟650V4A50W2SK1402N沟600V4A50W2SK1403AN沟650V8A100W2SK1403N沟600V8A100W2SK1404N沟600V5A35W2SK1405N沟600V15A60W2SK1406N沟500V20A100W2SK1407N沟4V12-60mA0.2W2SK1408N沟450V16A200W2SK1409N沟450V20A250W2SK140N沟5V100mA300mW2SK1410拆N沟500V16A2SK1411N沟500V20A250W2SK1412N沟1500V0.1A20W2SK1413N沟1500V2A60W2SK1414N沟1500V6A200W2SK14153.5V12-60mA0.16W12GHz场效应微波/高频放大管2SK1416N沟60V15A40W2SK1417N沟60V25A60W2SK1418N沟60V40A70W2SK1419N沟60V15A25W2SK141AN沟30V0.5-12mA0.25W2SK141N沟30V10mA250mW直接耦合放大/直流场效应管2SK1420N沟60V25A30W2SK1421N沟60V40A40W2SK1422N沟60V50A100W2SK1423N沟60V80A150W2SK1424N沟60V40A60W2SK1425N沟60V60A80W2SK1426N沟60V100A200W2SK1427N沟100V10A40W2SK1428N沟100V20A60W2SK1429N沟100V30A70W2SK1430N沟100V10A25W2SK1432N沟100V25A40W2SK1433N沟100V30A100W2SK1434N沟100V60A150W2SK1435N沟100V30A60W2SK1436N沟100V50A80W2SK1437N沟100V70A200W2SK1438N沟450V0.3A20W2SK1439N沟450V3A50W2SK1440N沟450V5A60W2SK1441N沟450V8A70W2SK1442N沟450V12A70W2SK1443N沟450V1A20W2SK1444N沟450V3A25W2SK1445LSN沟450V5A30W金属氧化物场效应功率放大管2SK1445N沟450V5A30W2SK1446N沟450V7A35W2SK1447N沟450V9A40W2SK1448N沟450V8A100W2SK1449N沟450V12A120W2SK1450N沟450V20A150W2SK1451N沟450V8A50W2SK1452N沟450V10A60W2SK1453N沟450V16A70W2SK1454N沟450V30A250W2SK1455N沟900V0.2A30W2SK1456N沟900V3A60W2SK1457N沟900V5A70W2SK1458N沟900V0.2A20W2SK1459N沟900V 2.5A30W2SK1460LSN沟900V 3.5A40W金属氧化物超高压场效应管2SK1460N沟900V 3.5A40W2SK1461N沟900V5A120W2SK1462N沟900V8A150W2SK1463N沟900V 4.5A60W2SK1464N沟900V8A80W2SK1465N沟900V8A200W2SK1466拆2SK1466N沟900V16A250W2SK1467N沟30V2A 3.5W2SK1468N沟30V4A20W2SK1469N沟30V8A30W2SK146-BLN沟40V8-16mA 1.2W2SK146-GRN沟40V5-10mA 1.2W2SK146N沟40V10mA600mW2SK146-VN沟40V14-30mA1.2W2SK1470N沟60V2A 3.5W2SK1472N沟60V8A30W2SK1473N沟100V2A 3.5W2SK1474N沟100V4A20W2SK1475N沟100V8A30W2SK1476N沟450V12A150W2SK1477N沟500V12A150W2SK1478N沟250V8A40W2SK1479N沟25V5mA0.1W通用型场效应管2SK147-BLN沟40V8-16mA0.6W2SK147-GRN沟40V5-10mA0.6W2SK147N沟40V10mA600mW2SK147-VN沟40V14-30mA0.6W2SK1480N沟20V30mA0.2W2SK1482N沟30V0.5A0.75W2SK1483N沟30V0.5A2W2SK1484N沟100V0.5A0.75W2SK1485N沟100V0.5A2W2SK1486N沟300V32A200W2SK1487N沟450V10A125W2SK1488N沟500V10A125W2SK1489N沟1000V12A200W2SK148N沟25V10mA100mW2SK1491N沟250V13A120W2SK1492拆N沟250V18A2SK1492N沟250V18A140W2SK1493N沟450V2A50W2SK1493-ZN沟450V3A50W2SK1494N沟500V2A50W2SK1494-ZN沟500V3A50W2SK1495N沟450V4A50W2SK1495-ZN沟450V7A70W2SK1496N沟450V4A50W2SK1496-ZN沟500V7A70W2SK1497N沟450V10A130W2SK1498N沟500V10A130W2SK1499N沟450V13A160W2SK149N沟20V10mA350mW2SK1500拆2SK1500N沟500V13A160W2SK1501N沟900V2A70W2SK1501-ZN沟900V4A70W2SK1502N沟900V4A120W2SK1503N沟500V10A80W2SK1504-LSN沟500V10A80W场效应开关管2SK1505N沟30V35A40W2SK1506N沟120V50A150W电机控制场效应管2SK1507拆2SK1507N沟600V9A50W场效应开关管2SK1508N沟60V35A60W电机控制场效应管2SK1509N沟100V20A60W电机控制场效应管2SK150-BLN沟50V6-14mA0.4W2SK150-GRN沟50V 2.6-6.5mA0.4W2SK150N沟50V10mA200mW2SK150-YN沟50V1-3mA0.4W2SK1510-LSN沟900V 3.5A60W场效应开关管2SK15122SK1513N沟500V8A150W2SK1514N沟60V40A125W2SK1515N沟450V10A100W2SK1516N沟500V10A100W2SK1517N沟450V20A120W2SK1518N沟500V20A165/345ns2SK1519N沟450V30A200W2SK151N沟40V10mA800mW2SK1520N沟500V30A200W2SK1521N沟450V50A250W2SK1522N沟500V50A250W2SK1526N沟450V40A250W2SK1527N沟500V40A250W2SK1528LN沟900V4A60W2SK1528N沟900V4A60W2SK1528SN沟900V4A60W2SK1529N沟500V4A120W通用型场效应管2SK152N沟15V5mA300mW2SK1530N沟200V12A150W通用型场效应管2SK1531N沟500V15A150W2SK1532N沟50V10mA0.1W通用型场效应管2SK1534N沟900V3A50W2SK1535N沟900V3A30W通用型场效应管2SK1536N沟900V3A70W2SK1537N沟900V5A100W2SK1538N沟900V7A130W2SK1539N沟900V10A150W2SK1539拆N沟900V10A150W通用型场效应管2SK1540LN沟450V7A60W2SK1540N沟450V7A60W2SK1540SN沟450V7A60W2SK1541LN沟500V7A60W2SK1541N沟500V7A60W2SK1541SN沟500V7A60W2SK1542N沟60V45A125W2SK1544N沟500V25A200W2SK1547N沟800V4A40W场效应开关管2SK1548N沟900V 3.5A40W场效应开关管2SK1549N沟250V20A80W场效应开关管2SK154N沟20V10mA350mW2SK1552-LSN沟800V4A60W场效应开关管2SK1555N沟50V16A75W2SK1555SN沟50V16A75W2SK1556N沟100V8A30W2SK1557N沟100V8A45W2SK1558N沟100V15A40W2SK1559N沟100V16A75W2SK1559SN沟100V16A75W2SK155N沟20V30mA400mW低频放大场效应管2SK1560N沟150V7A45W2SK1561N沟150V16A75W2SK1561SN沟150V16A75W2SK1562N沟400V12A150W2SK1562SN沟400V12A150W2SK1563N沟500V12A150W2SK1563SN沟500V12A150W2SK1564N沟800V3A150W2SK1564SN沟800V3A150W2SK1565N沟900V3A150W2SK1566N沟450V7A35W2SK1567N沟500V7A35W2SK1568N沟250V8A40W2SK1569N沟300V8A40W2SK156JN沟20V0.06mA0.1W场效应电容话筒专用管2SK156KN沟20V0.15mA0.1W场效应电容话筒专用管2SK156LN沟20V0.25mA0.1W场效应电容话筒专用管2SK156MN沟20V0.4mA0.1W场效应电容话筒专用管2SK156N沟20V10mA100mW通用型场效应管2SK1570N沟450V12A90/140ns2SK1571N沟500V12A90/140ns2SK1572N沟600V3A25W2SK1573N沟600V15A125W2SK1574N沟500V8A125W2SK1575N沟180V16A通用型场效应管2SK1576N沟30V3~16mA0.15W场效应低噪声放大管2SK1577N沟30A~80mA超高频场效应管2SK1578N沟20V1mA0.1W低频放大场效应管2SK1579N沟12V2A1W2SK157N沟50V10mA150mW低频放大场效应管2SK1580N沟16V0.01A0.15W2SK1581N沟16V0.01A0.2W2SK1582N沟30V0.01A0.2W2SK1583N沟16V0.3A2W2SK1584N沟30V0.3A2W2SK1585N沟16V0.5A2W2SK1586N沟30V0.5A2W2SK1587N沟16V1A2W2SK1588N沟16V1A2W2SK1589N沟100V0.01A0.2W2SK158N沟55V10mA70mW低频放大场效应管2SK1590N沟60V0.01A0.2W2SK1591N沟100V0.01A0.2W2SK1592N沟60V0.5A0.2W2SK1593N沟100V0.5A0.2W2SK1594N沟30V10A30W2SK1595N沟30V15A35W2SK1596N沟30V20A35W2SK15-GRN沟20V 2.5-5mA0.1W2SK15MN沟30V0.8-2.8mA0.1W场效应直流/音频管2SK15N沟20V10mA100mW2SK15-ON沟20V0.8-1.6mA0.1W2SK15-PN沟20V0.45-5mA0.1W2SK15-RN沟20V0.45-0.9m0.1W2SK15-YN沟20V 1.4-2.8mA0.1W2SK1600N沟800V3A75W2SK1601N沟900V3A75W2SK1602N沟800V 2.8A40W2SK1603N沟900V 2.5A40W2SK1605N沟450V5A50W2SK1606N沟450V8A50W2SK1607N沟450V13A120W2SK1608N沟500V5A50W2SK1609N沟500V8A50W2SK160AN沟50V0.5-12mA0.15W场效应音频/前置/输入2SK160K4N沟30V 1.5mA0.15W场效应音频/前置/输入级管2SK160K5N沟30V3mA0.15W场效应音频/前置/输入级管2SK160K6N沟30V6mA0.15W场效应音频/前置/输入级管2SK160K7N沟30V12mA0.15W场效应音频/前置/输入级管2SK160N沟30V10mA150mW甚高频放大场效应管2SK1610N沟500V13A120W2SK1611-12SK1611N沟800V3A50W2SK1612N沟900V3A50W2SK1613N沟900V5A120W2SK1614N沟900V8A120W2SK1615N沟 3.5V60mA0.16W2SK1616N沟 3.5V70mA0.18W2SK1617N沟 3.5V60mA0.16W2SK1618LN沟600V3A30W2SK1618N沟600V3A30W2SK1618SN沟600V3A30W2SK161-GRN沟18V5-10mA0.2W2SK161N沟18V10mA200mW2SK161-ON沟18V1-3mA0.2W2SK161-YN沟18V 2.5-6mA0.2W2SK1620LN沟150V10A50W2SK1620N沟150V10A50W2SK1620SN沟150V10A50W2SK1621LN沟250V7A50W2SK1621N沟250V7A50W2SK1621SN沟250V7A50W2SK1622LN沟60V25A50W2SK1622N沟60V25A50W2SK1622SN沟60V25A50W2SK1623LN沟100V20A50W2SK1623N沟100V20A50W2SK1623SN沟100V20A50W2SK1624LN沟600V20A50W2SK1624N沟600V4A50W2SK1624SN沟600V20A50W2SK1625LN沟600V7A75W2SK1625N沟600V7A75W2SK1625SN沟600V7A75W2SK1626N沟450V5A35W2SK1627N沟500V5A35W2SK1628N沟450V30A200W2SK1629N沟500V30A200W2SK162N沟40V10mA400mW2SK1630N沟700V3A75W2SK1630SN沟700V3A75W2SK1631N沟700V3A35W2SK1632N沟700V5A150W2SK1632SN沟700V5A150W2SK1633N沟700V5A45W2SK1634N沟700V5A150W2SK1635N沟60V50A130W2SK1636LN沟250V15A75W2SK1636N沟250V15A75W2SK1636SN沟250V15A75W2SK1637N沟600V4A35W2SK1638N沟900V3A60W2SK1639N沟900V4A75W2SK163N沟50V10mA400mW低频放大场效应管2SK1640N沟60V20A通用型场效应管2SK1641N沟250V20A150W2SK1642N沟400V9A40W2SK1643N沟900V5A125W2SK1647LN沟900V2A50W2SK1647N沟900V2A50W2SK1647SN沟900V2A50W2SK1648LN沟60V15A40W2SK1648N沟60V15A40W2SK1648SN沟60V15A40W2SK1649N沟900V6A150W2SK1650N沟900V4A125W2SK1651N沟500V8A80W金属氧化物场效应开关管2SK1653N沟60V45A45W2SK1654N沟250V16A150W金属氧化物场效应功率放大管2SK1654-SN沟250V16A150W金属氧化物场效应功率放大管2SK1655N沟300V16AMOS场效应普通用途管2SK1655-SN沟300V16A150W金属氧化物场效应功率放大管2SK1656N沟30V0.1A0.25W2SK1657N沟30V0.1A0.2W2SK1659-LSN沟900V3A80W场效应开关管2SK165N沟15V5mA300mW通用型场效应管2SK1663-LSN沟800V3A80W场效应开关管2SK1664N沟700V1A35W2SK1665N沟60V45A125W2SK1666N沟60V45A60W2SK1667N沟250V7A通用型场效应管2SK1668N沟250V4A通用型场效应管2SK1669N沟250V30A125W2SK1670N沟250V7A70W2SK1671N沟250V7A125W2SK1673N沟250V24A200W2SK1674N沟300V24A200W2SK1675N沟250V30A250W2SK1676N沟300V30A250W2SK1677N沟450V16A200W2SK1678N沟500V16A200W2SK1679N沟450V20A250W2SK1680N沟500V20A250W2SK1682N沟30V20mA0.15W通用型场效应管2SK1687N沟 3.5V12-60mA0.2W2SK1688N沟 3.5V12-60mA0.2W2SK1689N沟5V20-70mA0.2W2SK168N沟30V10mA200mW2SK1690N沟450V3A50W金属氧化物场效应功率放大管2SK1691N沟450V5A60W金属氧化物场效应功率放大管2SK1692N沟900V7A150W2SK1697N沟60V0.5A通用型场效应管2SK1698N沟60V0.3A通用型场效应管2SK1699N沟450V5A75W2SK169N沟15V50mA400mW低频放大场效应管2SK16-AN沟20V0.5-7mA0.1W2SK16-BN沟20V0.5-7mA0.1W2SK16-CN沟20V0.5-7mA0.1W2SK16HN沟20V0.5-7mA0.1W2SK16N沟20V10mA100mW2SK1700N沟450V5A35W金属氧化物场效应功率放大管2SK1702N沟450V8AMOS场效应普通用途管2SK1703N沟500V5A75W2SK1703SN沟500V5A75W2SK1704N沟500V5A35W2SK1705N沟500V8AMOS场效应普通用途管2SK1706N沟500V8AMOS场效应普通用途管2SK1707N沟700V4A75W金属氧化物场效应功率放大管2SK1707-SN沟700V4A75W金属氧化物场效应功率放大管2SK1708N沟600V4A35W金属氧化物场效应功率放大管2SK1709N沟600V6AMOS场效应普通用途管2SK170-BLN沟40V6-12mA0.4W2SK170-GRN沟40V 2.6-6.5mA0.4W2SK170N沟40V10mA400mW2SK170-VN沟40V10-20mA0.4W2SK170-YN沟40V1-3mA0.4W2SK1710N沟600V6A增强型金属氧化物场效应晶体管2SK1711N沟60V10A25W金属氧化物场效应功率放大管2SK1712N沟60V15A30W金属氧化物场效应功率放大管2SK1713N沟60V22A35W金属氧化物场效应功率放大管2SK1714N沟60V30A40W金属氧化物场效应功率放大管2SK1715N沟60V40A90W金属氧化物场效应功率放大管2SK1716N沟60V2A20W2SK1717N沟60V2A500mW2SK1718N沟60V6A25W2SK1719N沟60V5A20W2SK171N沟20V10mA200mW2SK1720N沟60V45A100W2SK1721N沟500V3A40W2SK1722N沟500V5A60W2SK1723N沟600V12A150W2SK1724N沟30V1A 3.5W2SK1725N沟30V1A1W2SK1726N沟60V1A 3.5W2SK1727N沟60V0.8A1W2SK1728N沟100V1A 3.5W2SK1729N沟100V0.5A1W2SK1730N沟30V 1.8A1W2SK1731N沟30V3A 1.5W2SK1732N沟30V 4.5A 1.5W2SK1734N沟60V 2.5A 1.5W2SK1735N沟60V4A 1.5W2SK1736N沟100V1A1W2SK1737N沟100V 1.8A 1.5W2SK1738N沟100V3A 1.5W2SK173N沟210V10A95WMOS场效应音频/功率放大管2SK1740N沟75mA250mW高频场效应管2SK1742N沟60V10A通用型场效应管2SK1743N沟60V15A通用型场效应管2SK1744N沟60V25A通用型场效应管2SK1745N沟500V18A150W2SK1746N沟600V2A40W2SK1748N沟60V4A20W2SK1748-ZN沟60V8A1W2SK1749N沟60V25A150W场效应开关管2SK1750N沟450V 2.5A50W2SK1750-ZN沟450V5A50W2SK1751N沟500V 2.5A50W2SK1751-ZN沟500V5A50W2SK1752N沟450V5A100W2SK1753N沟500V5A100W2SK1754N沟50V10A45W2SK1756N沟450V8A120W2SK1757N沟500V8A120W2SK1758N沟600V1A30W2SK175N沟180V8A125W场效应开关管2SK1760N沟900V3A100W2SK1761N沟250V12A通用型场效应管2SK1762N沟250V12A通用型场效应管2SK1763N沟30V 2.5A通用型场效应管2SK1764N沟60V2A通用型场效应管2SK1766N沟250V10A40W不间断电源用金属氧化物场效应管2SK1767N沟600V 3.5A40W2SK1768N沟60V12A 1.3W2SK1769N沟600V2A15W2SK176HN沟200V8A125W2SK176N沟200V8A125WMOS场效应音频/开关/功率放大管2SK1770N沟1000V5A通用型场效应管2SK1771N沟12.5V30mA150mW高频放大场效应管2SK1772N沟30V1A通用型场效应管2SK1773N沟1000V4A通用型场效应管2SK1774N沟800V8A通用型场效应管2SK1775N沟900V8A通用型场效应管2SK1776N沟60V10A场效应开关管2SK1777N沟60V15A场效应开关管2SK1778N沟100V10A场效应开关管2SK1784N沟450V6A100W2SK1785N沟500V6A100W2SK1792N沟60V45A100W2SK1793N沟900V2A75W2SK1793-ZN沟900V3A75W2SK1794拆2SK1794N沟900V3A100W2SK1795N沟900V4A140W2SK1796N沟900V5A150W2SK179N沟2SK17-GRN沟20V 2.6-6.5mA0.1W2SK17N沟20V10mA100mW2SK17-ON沟20V0.6-1.4mA0.1W2SK17-RN沟20V0.3-0.75m0.1W2SK17-YN沟20V 1.2-3mA0.1W2SK1803N沟900V8A100W2SK1804N沟100V5A20W2SK1805N沟500V7A125W2SK1807N沟900V4A通用型场效应管2SK1808N沟250V12A通用型场效应管2SK1809N沟600V5A通用型场效应管2SK180N沟600V8A300W2SK1814N沟60V20A45W电机控制场效应管2SK1815N沟60V35A50W电机控制场效应管2SK1817N沟100V20A40W电机控制场效应管2SK1818N沟250V20A50W电机控制场效应管2SK1819N沟450V5A35W电机控制场效应管2SK181N沟800V5A300W2SK1820-LSN沟500V6A80W场效应开关管2SK1821N沟600V2A30W场效应开关管2SK1822N沟60V20A35W电机控制场效应管2SK1823N沟60V50A50W电机控制场效应管2SK1824N沟30V0.01A0.2W金属氧化物场效应开关管2SK1825N沟50V50mA金属氧化物场效应开关管2SK1826N沟50V20mA0.2W高速场效应管2SK1827N沟50V50mA0.1W高速场效应管2SK1828N沟20V20mA200mW高速场效应管2SK1829N沟20V50mA0.1W高速场效应管2SK182EN沟500V18A1000W2SK182N沟600V18A1000W2SK1831N沟450V10A通用型场效应管2SK1832N沟500V10A通用型场效应管2SK1833N沟500V 2.5A40W2SK1834N沟800V2A40W2SK1835N沟1500V4A通用型场效应管2SK1836N沟450V50A通用型场效应管2SK1837N沟500V50A通用型场效应管2SK1839N沟30V100mA150mW金属氧化物低频放大场效应管2SK183EN沟800V10A500W2SK183HEN沟800V10A500W2SK183HN沟1200V10A1000W2SK183N沟800V10A1000W2SK183VEN沟800V10A500W2SK183VN沟1500V10A1000W2SK1840N沟30V100mA200mW金属氧化物低频放大场效应管2SK1841N沟30V100mA200mW金属氧化物低频放大场效应管2SK1842N沟40V1mA通用型场效应管2SK1844N沟70mA12GHz通用型场效应管2SK1845N沟70mA12GHz通用型场效应管2SK1846N沟800V3A40W2SK1847N沟30V0.5A0.25W金属氧化物高压高速开关场效应管2SK1848N沟60V0.4A0.25W金属氧化物高压高速开关场效应管2SK1849N沟100V0.25A0.25W金属氧化物高压高速开关场效应管2SK184-BLN沟50V6-14mA0.2W2SK184-GRN沟50V 2.6-6.5mA0.2W2SK184N沟50V10mA200mW2SK184-ON沟50V0.6-1.4mA0.2W2SK184-YN沟50V 1.2-3mA0.2W2SK1850N沟60V5A 1.8W场效应开关管2SK1851N沟60V7.5A 1.8W场效应开关管2SK1852N沟100V5A 1.8W场效应开关管2SK1853N沟100V7.5A 1.8W场效应开关管2SK1854N沟400V6A40W金属氧化物场效应开关管2SK1855N沟500V12A125W通用型场效应管2SK1858N沟800V3A60W通用型场效应管2SK1859N沟900V6A通用型场效应管2SK185N沟30V5mA320mW高频放大场效应管2SK1862N沟450V3A通用型场效应管2SK1863N沟500V3A通用型场效应管2SK1864N沟500V8A100W金属氧化物场效应开关管2SK1865N沟500V12A100W金属氧化物场效应开关管2SK1867N沟900V2A15W2SK1868N沟60V2A15W2SK1869N沟350V7A场效应开关管2SK186-CN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186-DN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186-EN沟40V 1.6-12mA0.3W场效应音频(低频)管2SK186N沟40V10mA300mW低频放大场效应管2SK1871N沟60V15A40W金属氧化物场效应功率放大管2SK1875N沟20V10mA0.1W高频放大场效应管2SK1878N沟100V10A场效应开关管2SK187-CN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-DN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-EN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187-FN沟40V 2.5-20mA0.3W场效应音频(低频)管2SK187N沟10mA300mW低频放大场效应管2SK1880N沟600V 1.5A通用型场效应管2SK1881-LSN沟60V20A45W电机控制场效应管2SK1882N沟60V12A40W通用型场效应管2SK1883N沟30V18A50W金属氧化物驱动场效应管2SK1884N沟30V22A60W金属氧化物驱动场效应管2SK1885N沟30V35A70W金属氧化物驱动场效应管2SK1886N沟30V15A25W金属氧化物驱动场效应管2SK1887N沟30V20A25W金属氧化物驱动场效应管2SK1888N沟30V30A30W金属氧化物驱动场效应管2SK1889N沟30V35A70W金属氧化物驱动场效应管2SK1890N沟30V22A60W金属氧化物驱动场效应管2SK1891N沟30V35A70W金属氧化物驱动场效应管2SK1892N沟60V15A50W金属氧化物驱动场效应管2SK1893N沟60V18A60W金属氧化物驱动场效应管2SK1894N沟60V30A70W金属氧化物驱动场效应管2SK1895N沟60V12A25W金属氧化物驱动场效应管2SK1896N沟60V15A25W金属氧化物驱动场效应管2SK1897N沟60V25A70W金属氧化物驱动场效应管2SK1898N沟60V15A50W金属氧化物驱动场效应管2SK1899N沟60V18A60W金属氧化物驱动场效应管2SK189N沟场效应音频(低频)管2SK18AN沟40V0.45-2.8m0.2W2SK18N沟40V10mA200mW2SK18-ON沟40V0.8-1.6mA0.2W2SK18-RN沟40V0.45-2.8m0.2W2SK18-YN沟40V 1.4-2.8mA0.2W2SK1900N沟60V30A70W金属氧化物驱动场效应管2SK1901N沟60V12A50W金属氧化物驱动场效应管2SK1902N沟60V15A60W金属氧化物驱动场效应管2SK1903N沟60V25A70W金属氧化物驱动场效应管2SK1904N沟60V10A25W金属氧化物驱动场效应管2SK1905N沟60V12A25W金属氧化物驱动场效应管2SK1906N沟60V20A30W金属氧化物驱动场效应管2SK1907N沟60V12A50W金属氧化物驱动场效应管2SK1908N沟60V15A60W金属氧化物驱动场效应管2SK1909N沟60V25A70W金属氧化物驱动场效应管2SK190EN沟40V6-50mA0.8W场效应音频(低频)管2SK190FN沟40V6-50mA0.8W场效应音频(低频)管2SK190HN沟40V6-50mA0.8W场效应音频(低频)管2SK190N沟40V10mA800mW低频放大场效应管2SK1910N沟60V25A通用型场效应管2SK1911N沟60V40A通用型场效应管2SK1913N沟600V 2.5A40W通用型场效应管2SK1916拆N沟450V18A2SK1916N沟450V18A80W场效应开关管2SK1917-MN沟25V10A50W场效应开关管2SK1918N沟60V25A场效应开关管2SK1919N沟60V40A通用型场效应管2SK191N沟15V10mA1W2SK1920N沟250V4A30W金属氧化物高压高速开关场效应管2SK1929N沟900V 2.5A100W通用型场效应管2SK192AN沟18V3-24mA0.2W2SK192-BLN沟18V12-24mA0.2W2SK192-GRN沟18V6-14mA0.2W2SK192N沟18V10mA200mW2SK192-YN沟18V3-7mA0.2W2SK1930N沟1000V3A100W通用型场效应管2SK1933N沟900V10A通用型场效应管2SK1934N沟1000V8A通用型场效应管2SK1936-01N沟500V10A100W场效应开关管2SK1937-01N沟500V15A125W场效应开关管2SK1938-01N沟500V18A100W场效应开关管2SK1938N沟800V3A125W通用型场效应管2SK1939-01N沟600V8A100W场效应开关管2SK1939N沟900V3A150W通用型场效应管2SK193N沟20V10mA250mW2SK1940-01N沟600V12A125W场效应开关管2SK1940N沟600V12A125W2SK1941拆2SK1941-01N沟600V16A100W场效应开关管2SK1942-01N沟900V3A80W场效应开关管2SK1943-01N沟900V5A80W场效应开关管2SK1944-01N沟900V5A100W场效应开关管2SK1945-01LN沟900V5A80W场效应开关管2SK1945-01SN沟900V5A80W场效应开关管2SK1946-01MN沟60V45A50W电机控制场效应管2SK1947N沟250V50A通用型场效应管2SK1948N沟250V50A通用型场效应管2SK1949N沟60V5A场效应开关管2SK194N沟40V10mA400mW2SK1950N沟60V3A通用型场效应管2SK1951N沟60V25A通用型场效应管2SK1952N沟60V40A通用型场效应管2SK1953N沟600V1A25W场效应开关管2SK1954N沟180V2A20W场效应开关管2SK1957N沟200V5A通用型场效应管2SK1958N沟16V0.01A0.15W2SK1959N沟16V1A2W2SK195N沟20V10mA250mW2SK1960N沟16V 1.5A2W2SK1962N沟16V 1.5A2W2SK1963N沟4V12-60mA0.2W。
2SK1941中文资料
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min. Typ. Max. Unit 30 °C/W 1,25 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=8A
VGS=10V
Forward Transconductance
g fs
ID=8A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
tr
ID=8A
Turn-Off-Time toff (ton=td(off)+tf)
2SK2110中文资料
Document No. D11230EJ2V0DS00 (2nd edition)Date Published June 1996 PPrinted in Japan199622SK21103TYPICAL CHARACTERISTICS (T A = 25 ˚C)DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAd T - De r a t i n g F a c t o r - %FORWARD BIAS SAFE OPERATING AREA V DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - AV GS - Gate to Source Voltage - VFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTI D - Drain Current - A |y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e - SDRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1.51I D - Drain Current - AR D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω00.54DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENTI D - Drain Current - A SWITCHING CHARACTERISTICSI D - Drain Current - At d (o n ), t r , t d (o f f ), t f - S w i t c h i n g T i m e - n sDRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1.51051020V GS - Gate to Source Voltage - VR D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - ΩI D = 0.3 A15C i s s , C o s s , C r s s - C a p a c i t a n c e - p FCAPACITANCE vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - V I S D - D i o d e F o r w a r d C u r r e n t - ASOURCE TO DRAIN DIODE FORWARD VOLTAGE10.010.20.40.71V SD - Source to Drain Voltage - V0.80.90.30.50.60.10.0010.0001R D S (o n ) - D r a i n t o S o u r c e O n -S t a t e R e s i s t a n c e - Ω0.5REFERENCEDocument Name Document No.NEC semiconductor device reliability/quality control system TEI-1202Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535EGuide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E5[MEMO]No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。
2SA2013中文资料(ONSEMI)中文数据手册「EasyDatasheet - 矽搜」
Unit µA µA MHz
200 (360)400
本文描述或包含没有规范,能够处理应用需要极高的可靠性,如生命支持系统,飞机的控制系统或其他应用程序的 故障可合理预期会导致严重的身体任何及所有SANYO产品和/或财产损失.使用任何SANYO产品中,在此类应用中描述或包 含前与您的SANYO代表就近请教.
芯片中文手册,看全文,戳
订购数量: ENN6307B
2SA2013 / 2SC5566
2SA2013 / 2SC5566 DC / DC转换器应用
应用
•
PNP / NPN外延平面硅晶体管
继电器驱动器,灯驱动器,电机驱动器,闪存.
特征
• • • • • •
采用FBET和MBIT过程. 高电流容量. 低集电极 - 发射极饱和电压. 高速切换. 超小型封装facilitales 小型化的终端产品. 高允许功耗.
4
IC - VCE
mA 70 mA 80 90mA 100mA A 60m 50mA 40mA 30mA 20mA 10mA
--3
3
--2 集电极电流,IC - 一个 --1
2
--10mA
集电极电流,IC - 一个 1
0
IB=0mA
0 --0.4 --0.8 --1.2 集电极 - 发射极电压VCE - V --1.6 --2.0 IT00152
--25° C
5°C Ta=7 25°C
饱和电压 )° -C 毫伏 10 ,VCE(SAT --25 7 5 3 2 1.0 0.01 2 3 5 7 0.1
°C a=75 T 25°C
2 3
5 7 1.0
2
3
集电极电流,IC - 一个 10000 7 5 3 2 1000 7 5 集电极 - 发射极 3 2 100 ,VCE(SAT) - 毫伏 饱和电压 7 ° Ta=75 C 5
2SK2007资料
4
100 V
50 V
0
20 40 60 80 100
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Switching Characteristics 500
200
100 tr
50
td (off) tf td (on)
Drain Current I D ( A )
Drain Current I D (A)
Maximum Safe Operation Area
100
10 µs
s 100 1 ms
30
µ
PW
10 3 1
OarpeearaistiloimnDiitCneOdthpeisrati=on1(0Tmc =s by R DS (on)
vs. Drain Current 100
–25°C
30
Tc = 25°C
10
3
75°C
1
VDS = 10 V
Pulse Test
0.3
0.1 0.1 0.3 1 3 10 30 100
Drain Current ID (A)
Static Drain to Source On State Resistance R DS (on) (Ω)
(1 shot) 25°C)
0.3
Ta = 25°C
0.1 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics 50
2SC1213AK-C中文资料
2SC1213A(K)Silicon NPN EpitaxialApplication• Low frequency amplifier• Medium speed switchingOutline2SC1213A (K)2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO 50V Collector to emitter voltage V CEO 50V Emitter to base voltage V EBO 4V Collector currentI C 500mA Collector power dissipation P C 400mW Junction temperature Tj 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Collector to base breakdown voltageV (BR)CBO50——V I C = 10 µA, I E = 0Collector to emitter breakdown voltageV (BR)CEO 50——V I C = 1.0 mA, R BE = ∞Emitter to base breakdown voltageV (BR)EBO 4——V I E = 10 µA, I C = 0Collector cutoff current I CBO ——0.5µAV CB = 20 V, I E = 0DC current transfer ratio h FE *160—320V CE = 3 V, I C = 10 mA h FE 10——V CE = 3 V, I C = 500 mA*2Base to emitter voltage V BE 0.64—V V CE = 3 V, I C = 10 mA Collector to emitter saturation voltageV CE(sat)—0.120.6V I C = 150 mA, I B = 15 mA*2Base to emitter satruation voltageV BE(sat)—0.83 1.2V I C = 150 mA, I B = 15 mA*2Collector output capacitance Cob —7.0—pF V CB = 10 V, I E = 0, f = 1 MHz Gain bandwidth product f T —120—MHz V CE = 3 V, I C = 10 mA Turn on time t on —0.25—µS V CC = 10.3 VI C = 10 I B1 = –10 I B2 = 10 mATurn off time t off —0.85—µS Storage timet stg—0.4—µSV CC = 5 VI C = I B1 = –I B2 = 20 mANotes: 1.The 2SC1213A(K) is grouped by h FE as follows.2.Pulse test B CD60 to 120100 to 200160 to 3202SC1213A (K)32SC1213A (K)42SC1213A (K)52SC1213A (K)6Hitachi CodeJEDECEIAJWeight (reference value)TO-92 (1)ConformsConforms0.25 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
2SK3210中文资料
I DSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance
|yfs|
18
Input capacitance
元器件交易网
2SK3210(L), 2SK3210(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =35mΩ typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Test Conditions ID = 10mA, VGS = 0 IG = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 150 V, VGS = 0 ID = 1mA, VDS = 10V ID = 15A, VGS = 10VNote4 ID = 15A, VGS = 4V Note4 ID = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz ID = 15A, VGS = 10V RL = 2Ω
Asia (HongKong) : /eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
2KS输调漆系统(中文版)
系统操作 . . . . . . . . . . . . . . . . . . 42 操作模式 . . . . . . . . . . . . . . . . 42 顺序分料 . . . . . . . . . . . . . . . . 42 动态分料 . . . . . . . . . . . . . . . . 42 换配方 (颜色) . . . . . . . . . . . . . 42 通用操作循环:顺序分料 . . . . . . . . . 42 通用操作循环:动态分料 . . . . . . . . . 44 混合歧管阀设置 . . . . . . . . . . . . . 47 气流开关 (AFS)的功能 . . . . . . . . . 48 启动 . . . . . . . . . . . . . . . . . . 49 停止工作 . . . . . . . . . . . . . . . . 51 泄压步骤 . . . . . . . . . . . . . . . . 51 清洗 . . . . . . . . . . . . . . . . . . 55
流量计的校准 . . . . . . . . . . . . . . . . 59 换色 . . . . . . . . . . . . . . . . . . . . 61
换色步骤 . . . . . . . . . . . . . . . . 61 换色过程 . . . . . . . . . . . . . . . . 61 警报和警告 . . . . . . . . . . . . . . . . . 73 系统警报 . . . . . . . . . . . . . . . . 73 系统警告 . . . . . . . . . . . . . . . . 73 警报故障排除 . . . . . . . . . . . . . . . . 74 示意图 . . . . . . . . . . . . . . . . . . . 83 系统气动示意图 . . . . . . . . . . . . . 83 系统电气示意图 . . . . . . . . . . . . . 84 EasyKey 电气示意图 . . . . . . . . . . . 86 流量计性能数据 (A 和 B 上均为 G3000) . . . . 87 流量计性能数据 (A 上为 G3000,B 上为 Coriolis) . . . . . 88 技术数据 . . . . . . . . . . . . . . . . . . 89 Graco Standard Warranty . . . . . . . . . . 90 Graco Information . . . . . . . . . . . . . 90
2SK2391_06中文资料
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2−π−MOSV)2SK2391Chopper Regulator, DC −DC Converter and Motor Drive Applicationsz 4-V gate drivez Low drain −source ON resistance : R DS (ON) = 66 m Ω (typ.) z High forward transfer admittance : |Y fs | = 16 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 100 V) z Enhancement mode : V th = 0.8~2.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 100 VDrain −gate voltage (R GS = 20 k Ω) V DGR 100 VGate −source voltage V GSS ±20 V DC (Note 1) I D 20 A Drain currentPulse (Note 1)I DP 80 ADrain power dissipation (Tc = 25°C)P D 35 WSingle pulse avalanche energy(Note 2)E AS 208mJ Avalanche currentI AR 20 A Repetitive avalanche energy (Note 3) E AR 3.5 mJChannel temperature T ch 150 °CStorage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to case R th (ch −c)3.57°C / W Thermal resistance, channel to ambientR th (ch −a) 62.5°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 25 V, T ch = 25°C (initial), L = 840 μH, R G = 25 Ω, I AR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC―JEITA SC-67 TOSHIBA 2-10R1BWeight: 1.9 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage current I GSS V GS = ±16 V, V DS = 0 V — — ±10μA Drain cut −off currentI DSS V DS = 100 V, V GS = 0 V — — 100μA Drain −source breakdown voltage V (BR) DSSI D = 10 mA, V GS = 0 V 100 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 0.8 — 2.0 V V GS = 4 V, I D = 10 A — 0.09 0.13Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 10 A— 0.066 0.085Ω Forward transfer admittance |Y fs | V DS = 10 V, I D = 10 A816—SInput capacitanceC iss — 1100 —Reverse transfer capacitance C rss — 180 — Output capacitanceC ossV DS = 10 V, V GS = 0 V, f = 1 MHz — 400 —pF Rise timet r — 20 —Turn −on timet on — 30 —Fall timet f — 50 —Switching timeTurn −off timet off— 140 —nsTotal gate charge (Gate −sourceplus gate −drain) Q g —50 — Gate −source charge Q gs — 34 — Gate −drain (“miller”) chargeQ gdV DD ≈ 80 V, V GS = 10 V, I D = 27 A — 16 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1)I DR —— — 20 A Pulse drain reverse current(Note 1) I DRP —— — 80 A Forward voltage (diode) V DSFI DR = 20 A, V GS = 0 V——−1.7VReverse recovery time t rr — 155 — nsReverse recovery chargeQ rrI DR = 20 A, V GS = 0 V, dI DR / dt = 50 A / μs— 0.31 — μCMarkinglead (Pb)-free package or lead (Pb)-free finish.K2391⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD V VDSS B VDSS B I L 21AS E 2R G = 25 Ω V DD = 25 V , L = 840 μHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
2SJ313_07中文资料
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type2SJ313Audio Frequency Power Amplifier Applicationz High breakdown voltage: V DSS = −180 Vz High forward transfer admittance: |Y fs | = 0.7 S (typ.) z Complementary to 2SK2013Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltage V DSS−180 VGate −source voltage V GSS ±20 V Drain current(Note 1)I D−1 A Power dissipation (Tc = 25°C) P D 25 W Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC ―JEITA SC-67TOSHIBA 2-10R1B Weight: 1.9 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitGate leakage currentI GSS V DS = 0, V GS = ±20 V ― ― ±100nADrain −source breakdown voltage V (BR) DSS I D = −10 mA, V GS = 0 −180 ― ― V Gate −source cut −off voltage (Note 2) V GS (OFF) V DS = −10 V, I D = −10 mA −0.8 ― −2.8V Drain −source saturation voltage V DS (ON)I D = −0.6 A, V GS = −10 V―−1.2−3.0VForward transfer admittance |Y fs | V DS = −10 V, I D = −0.3 A ― 0.7 ― S Input capacitance C iss ― 210 ― Output capacitanceC oss ― 90 ― Reverse transfer capacitanceC rssV DS = −10 V, V GS = 0, f = 1 MHz― 45 ―pFNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V GS (OFF) ClassificationO: −0.8~−1.6, Y: −1.4~−2.8This transistor is the electrostatic-sensitive device.Please handle with caution.Markinglead (Pb)-free package or lead (Pb)-free finish.J313Test Circuit WaveformsRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
2SK2599_06资料
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)2SK2599Chopper Regulator, DC −DC Converter and Motor Drive Applicationsz Low drain −source ON resistance : R DS (ON) = 2.9 Ω (typ.) z High forward transfer admittance : |Y fs | = 1.7 S (typ.)z Low leakage current : I DSS = 100 μA (max) (V DS = 500 V) z Enhancement mode : V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltageV DSS 500 VDrain −gate voltage (R GS = 20 k Ω) V DGR 500 VGate −source voltageV GSS ±30 VDC (Note 1) I D 2 APulse (t = 1 ms)(Note 1) I DP 5A Drain currentPulse (t = 100 μs)(Note 1)I DP 12A Drain power dissipationP D 1.3 WSingle pulse avalanche energy(Note 2) E AS 112mJ Avalanche currentI AR 2 A Repetitive avalanche energy (Note 3) E AR 0.13 mJChannel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Thermal CharacteristicsCharacteristics Symbol Max UnitThermal resistance, channel to ambientR th (ch −a) 96.1°C / WNote 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V DD = 90 V, T ch = 25°C (initial), L = 48.4 mH, R G = 25 Ω, I AR = 2 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.Unit: mmJEDEC ― JEITA―TOSHIBA 2-8M1BWeight: 0.54 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max Unit Gate leakage currentI GSS V GS = ±25 V, V DS = 0 V — — ±10μA Gate −source breakdown voltage V (BR) GSS I G = ±10 μA, V GS = 0 V ±30 — — V Drain cut −off currentI DSS V DS = 500 V, V DS = 0 V — — 100μA Drain −source breakdown voltage V (BR) DSSI D = 10 mA, V GS = 0 V 500 — — V Gate threshold voltage V th V DS = 10 V, I D = 1 mA 2.0 — 4.0 V Drain −source ON resistance R DS (ON)V GS = 10 V, I D = 1 A— 2.9 3.2 Ω Forward transfer admittance |Y fs | V DS= 10 V, I D = 1 A0.81.7—SInput capacitanceC iss — 380 —Reverse transfer capacitance C rss — 40 — Output capacitanceC ossV DS = 10 V, V GS = 0 V, f = 1 MHz — 120 —pF Rise timet r — 15 —Turn −on timet on — 25 —Fall timet f — 20 —Switching timeTurn −off timet off— 80 —nsTotal gate charge (Gate −sourceplus gate −drain) Q g —9 — Gate −source charge Q gs — 5 — Gate −drain (“miller”) chargeQ gdV DD ≈ 400 V, V GS = 10 V, I D = 2 A — 4 —nCSource −Drain Ratings and Characteristics (Ta = 25°C)Characteristics SymbolTest ConditionMin Typ. Max UnitContinuous drain reverse current(Note 1) I DR —— — 2 A I DRP t = 1 ms — — 5 APulse drain reverse current(Note 1) IDRPt = 100 μs 12 A Forward voltage (diode) V DSF I DR = 2 A, V GS = 0 V ——−1.5VReverse recovery time t rr — 1000 — ns Reverse recovered chargeQ rrI DR= 2 A, V GS= 0 V dI DR / dt = 100 A / μs— 3.5 — μCMarkinglead (Pb)-free package or lead (Pb)-free finish.⎟⎠⎞⎜⎝⎛−⋅⋅⋅=DD V VDSS B VDSS B I L 21AS E 2R G = 25 ΩV DD = 90 V , L = 48.4 mHRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
2SK1541资料
2SK1540(L)(S), 2SK1541(L)(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures• Low on-resistance• High speed switching• Low drive current• No secondary breakdown• Suitable for switching regulator and DC-DC converterOutline2SK1540(L)(S), 2SK1541(L)(S)2Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Drain to source voltage 2SK1540V DSS450V2SK1541500Gate to source voltage V GSS ±30V Drain current I D7A Drain peak currentI D(pulse)*128A Body to drain diode reverse drain current I DR 7A Channel dissipation Pch*260W Channel temperature Tch 150°C Storage temperature Tstg –55 to +150°C Note1.PW ≤ 10 µs, duty cycle ≤ 1%2.Value at T C = 25°C2SK1540(L)(S), 2SK1541(L)(S)3Electrical Characteristics (Ta = 25°C)ItemSymbol MinTyp Max Unit Test conditions Drain to source 2SK1540V (BR)DSS450——VI D = 10 mA, V GS = 0breakdown voltage2SK1541500Gate to source breakdown voltageV (BR)GSS ±30——V I G = ±100 µA, V DS = 0Gate to source leak current I GSS——±10µA V GS = ±25 V, V DS = 0Zero gate voltage 2SK1540I DSS——250µA V DS = 360 V, V GS = 0drain current2SK1541V DS = 400 V, V GS = 0Gate to source cutoff voltage V GS(off)2.0—3.0V I D = 1 mA, V DS = 10 V Static Drain to source 2SK1540R DS(on)—0.60.8ΩI D = 4 A, V GS = 10 V *1on state resistance 2SK1541—0.70.9Forward transfer admittance|yfs| 4.0 6.5—S I D = 4 A, V DS = 10 V *1Input capacitance Ciss —1050—pF V DS = 10 V, V GS = 0,Output capacitanceCoss —280—pF f = 1 MHzReverse transfer capacitance Crss —40—pF Turn-on delay time t d(on)—15—ns I D = 4 A, V GS = 10 V,Rise timet r —55—ns R L = 7.5 ΩTurn-off delay time t d(off)—95—ns Fall timet f —40—ns Body to drain diode forward voltageV DF —0.95—V I F = 7 A, V GS = 0Body to drain diode reverse recovery time t rr—320—nsI F = 7 A, V GS = 0,di F /dt = 100 A/µs Note1.Pulse testSee characteristic curves of 2SK1157, 2SK1158.2SK1540(L)(S), 2SK1541(L)(S)4Hitachi CodeJEDECEIAJWeight (reference value)LDPAK (L)——1.4 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type2SK2013Audio Frequency Power Amplifier Applicationz High breakdown voltage: V DSS = 180V z High forward transfer admittance : |Y fs | = 0.7 S (typ.)z Complementary to 2SJ313Absolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitDrain −source voltage V DSS 180 V Gate −source voltage V GSS ±20 V Drain current(Note 1)I D 1 A Drain power dissipation (Tc = 25°C) P D 25 W Channel temperature T ch 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) arewithin the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).MarkingElectrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitGate leakage currentI GSS V DS = 0, V GS = ±20 V — — ±100nA Drain −source breakdown voltage V (BR) DSS I D = 10 mA, V GS = 0 180 — — V Gate −source cut −off voltage (Note 2) V GS (OFF) V DS = 10 V, I D = 10 mA 1.8 — 2.8 V Drain −source saturation voltage V DS (ON) I D = 0.6 A, V GS = 10 V— 1.7 3.0 V Forward transfer admittance |Y fs | V DS = 10 V, I D = 0.3 A— 0.7 — SInput capacitance C iss V DS = 10 V, V GS = 0, f = 1 MHz — 170 — Output capacitance C oss V DS = 10 V, V GS = 0, f = 1 MHz — 45 — Reverse transfer capacitanceC rssV DD ≈ 10 V, V GS = 0, f = 1 MHz—17—pF Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: V GS (OFF) ClassificationO: 0.8~1.6,Y: 1.4~2.8This transistor is an electrostatic-sensitive device.Please handle with caution.Unit: mmJEDEC ―JEITA SC −67 TOSHIBA 2-10R1B Weight: 1.9 g (typ.)lead (Pb)-free package or lead (Pb)-free finish.K2013Switching Time Test Circuit WaveformsRESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。