FY12AAJ-03F中文资料

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control DC-DC converter, etc.
.................................................................30V DS (ON) (MAX).............................................11.5m Ω......................................................................12A
5.0
0.4
1.27
➀➁➄➅➆➄➅➆➇
➀➁➂
➃
FY12AAJ-03F
HIGH-SPEED SWITCHING USE
V (BR)DSS V (BR)GSS I DSS I GSS V GS (th)r DS (ON)r DS (ON)r DS (ON)V DS (ON)| y fs |C iss C oss C rss t d (on)t r
t d (off)t f Q g Q gs Q gd V SD
R th (ch-a)t rr
V V mA µA V m Ωm Ωm ΩV S pF pF pF ns ns ns ns nC nC nC V °C/W ns
30±20——1.0——————————————————
————1.59.012.514.50.10825180050023018205017354100.75—45
——0.1±102.011.517.520.00.138———————————1.1062.5—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance
Reverse transfer capacitance Turn-on delay time Rise time
Turn-off delay time Fall time
Total gate charge Gate-source charge Gate-drain charge Source-drain voltage Thermal resistance Reverse recovery time
Symbol
Unit Parameter
Test conditions
Limits
Min.Typ.Max.I D = 1mA, V GS = 0V I G = ±100µA, V GS = 0V V DS = 30V, V GS = 0V V GS = ±20V , V DS = 0V I D = 1mA, V DS = 10V I D = 12A, V GS = 10V I D = 6A, V GS = 4.5V I D = 6A, V GS = 4V I D = 12A, V GS = 10V I D = 12A, V DS = 10V
V DS = 10V, V GS = 0V , f = 1MHz
V DD = 15V , I D = 6A, V GS = 10V , R G = 5Ω
V DD = 15V, V GS = 10V , I D = 12A I S = 1.8A, V GS = 0V Channel to air
I S = 1.8A, d is /d t = –50A/µs。