Crucible-free pulling of germanium crystals
实验室仪器or试剂耗材中英文对照
实验室仪器or试剂耗材中英文对照收藏起来，以后再也不用暗搓搓地搞个小本本记录了~ 容器与耗材 vessel & consumablematerial小瓶——vial量杯——measuring cup烧杯——beaker量筒——measuring flask/measuring cylinderer坩埚——crucible坩埚钳——crucible clamp试管——test tube漏斗——funnel比色皿——cuvette鱼缸——aquarium烧瓶——flask锥形瓶——conical flask塞子——stopper/plug洗瓶——plastic wash bottle玻璃活塞——stopcock试剂瓶——reagent bottles玻棒——glass rod搅拌棒——stirringrod容量瓶——volumetric flask/measuring flask移液管——(one-mark) pipette吸液管——pipette滤器——filter滤纸——filter paper培养皿——culture dish移液枪——pipette移液枪枪头——pipette tips剃刀刀片——razorblade手术刀——scalpel垃圾袋——disposablebag垃圾桶——garbagebin橡皮筋——rubber band托盘——Tray铝箔——aluminiumfoil洗耳球——rubber suction bulb保鲜膜——preservativefilm研磨钵——mortar研杵——pestle小滴管——dropper蒸馏装置——distillingapparatus 桶——bucket广口瓶——wide-mouth bottle离心机转子——rotor试管架——test tube holder/rack酒精灯——alcoholburner酒精喷灯——blastalcohol burner搅拌装置——stirring device石蜡封口膜——Parafilm微量离心管（EP管）——Eppendorf tube 载玻片——Slide盖玻片——Cover glass离心管——Centrifugetube电泳槽——Geltank电线——Electricalleads牙签——Toothpick螺丝钉——Screw锁紧螺母——Nut,Cap nut复印纸——Copypaper复写纸——Carbonpaper 钉——Nail试管刷——test-tube brush计时器——Timer闹钟——AlarmclockU形钉——Staple衣服挂钩——Coathanger电泳用的梳子——Comb扳手——Shiftingspanner订书机——Stapler订书钉——staple圆珠笔芯——Refill灯泡——Globe记号笔——marker pen注射器——syringe注射器活塞——plunger铁架台——ironsupport万能夹——extensionclamp止水夹——flatjawpinchcock圆形漏斗架——cast-ironring橡胶管——rubbertubing药匙——labspoon镊子——forceps/tweezers蜂鸣器——buzzer架子——shelf剪刀——scissor打孔器——stopperborer移液吸管——serological pipette 血球计数板hemocytometerpH试纸——universal ph indicatorpaper 称量纸——weighingpaper透明胶带——sellotape筛子——sieve网眼——mesh格子——grid擦镜纸——wiperfor lens水银温度计——mercury-filledthermometer 白大褂——white gown真空泵——vacuumpump水浴锅——waterbath kettle口罩——respirator电极——electrode阳极,正极——anode阴极,负极——cathode实验操作——（manipulation）丢弃——discard转移容器——decant吸出——aspirate吹吸——blowing and suction离心收集——pellet重悬——resuspend絮状沉淀——flocculent precipitate浑浊的——turbid烘——bake灭菌——sterilize均质化——homogenize分装——aliquot培养——foster通风——ventilate冷却——chill down稀释——dilute洗脱——elute孵育——incubate超声破碎——ultrasonication 淬灭——quench裂解物——Lysate沉淀物——Sediment上清——Supernatant小滴——droplet一批——batch色谱——chromatograph沉淀——precipitate接种——inoculate探针——probe蒸馏——distil/distill搅拌——Stir/agitate旋转——swirl/ spin中和——neutralize校准——calibrate平衡——equilibrate结块、块状沉淀——clump 粘稠的——viscous漂洗——rinse脱水——dehydrate发酵——fermentation溶解——dissolve燃烧——combustion水解——hydrolysis过滤——filtrate浓缩——condense催化剂——catalyst研磨——grind破碎——crush催化作用——catalysis分解——dissolution涡旋震荡——Vortex电泳——Electrophoresis抽滤——suctionfiltration电转化——electro-transformation收菌——harvest切碎——chop/mince灌注——perfusion浆液——slurry仪器——（apparatus）恒温循环仪——Thermostaticcirculator空调机——AirconditionerpH计——pHmeter照度计(测量荧光素酶酶活)——luminometer 磁力搅拌器——magneticstirrer烘箱——oven微波炉——microwaveoven电磁炉——electromagneticoven凝胶系统——Gelsystem电子天平——Electronicbalance转接器——Adapter离心机——centrifuge盖子——lid/ cap封口设备——Sealingequipment复印机——Duplicator,copying machine超净工作台——superclean bench通风橱——fume cupboard药柜——Cupboard高压蒸汽灭菌器——autoclave电泳电源——Electrophoresispower supply紫外灯——Ultravioletillumination真空泵——Vacuumpump天平——balance/scale分析天平——analytical balance台秤——platform balance涡旋振荡器——VortexingmachineCO2培养箱——CO2Incubators电子显微镜——ElectroMicroscopy电泳仪——ElectrophoresisSystem恒流泵——constantflow pump解剖镜——anatomicallensPCR仪——Thermocycler倒置显微镜——InvertedMicroscope核磁共振波谱仪——NuclearMagnetic Resonance Spectrometer光学显微镜——OpticalMicroscopy摇床——Shaker培养箱——incubator超滤器——UltrahighPurity Filter超低温冰箱——Ultra-lowTemperature Freezer超声破碎仪——UltrasonicCell Disruptor紫外观察灯——UltravioletLamp紫外-可见光分光光度计——UV-isibleSpectrophotometer计算器——calculator/numerator容器类量杯——measuringcup烧杯——beaker不锈钢杯——stainless-steelbeaker量筒——measuringflask/measuring cylinder 量筒——graduatedflask/measuring cylinder 坩埚——crucible坩埚钳——crucibleclamp坩埚——cruciblepot，meltingpot试管——testtube试管架——testtube holder漏斗——funnel分液漏斗——separatoryfunnel烧瓶——flask锥形瓶——conicalflask塞子——stopper洗瓶——plasticwash bottle滴定管——burette玻璃活塞——stopcock冷凝器——condenser试剂瓶——reagentbottles玻棒——glassrod搅拌棒——stirringrod蒸馏烧瓶——distillingflask碘量瓶——iodineflask表面皿——watchglass蒸发皿——evaporatingdish容量瓶——volumetricflask/measuring flask 移液管——(one-mark)pipette刻度移液管——graduatedpipettes称量瓶——weighingbottle吸液管——pipette滤管——filter天平——balance/scale分析天平——analyticalbalance台秤——platformbalance游码——crossbeamsand sliding weights酒精灯——alcoholburner酒精喷灯——blastalcohol burner搅拌装置——stirringdevice洗耳球——rubbersuction bulb研磨钵——mortar研磨棒——pestle玛瑙研钵——agatemortar瓷器——porcelain白细口瓶——flintglass solution bottle with stopper 滴瓶——droppingbottle小滴管——dropper蒸馏装置——distillingapparatus蒸发器——evaporator试验用器材升降台——labjack铁架台——ironsupport万能夹——extensionclamp蝴蝶夹——double-buretclamp双顶丝——clampregular holder止水夹——flatjawpinchcock圆形漏斗架——cast-ironring移液管架——pipetrack试管架——tuberack沸石——boilingstone橡胶管——rubbertubing药匙——labspoon镊子——forceps坩埚钳——crucibletong剪刀——scissor打孔器——stopperborer石棉网——asbestos-freewire gauze电炉丝——wirecoil for heater脱脂棉——absorbentcottonphph试纸——universal ph indicator paper滤纸——filter paper称量纸——weighingpaper擦镜纸——wiperfor lens秒表——stopwatch量杯——glassgraduates with scale白滴定管（酸）——flintglass burette with glass stopcock棕色滴定管（酸）——brownglass burette with glass stopcock 白滴定管（碱）——flintglass burette for alkali棕色滴定管（碱）——brownglass burette for alkali比重瓶——specificgravity bottle水银温度计——mercury-filledthermometerpH计——pHmeter折光仪——refractometer真空泵——vacuumpump冷、热浴——bath离心机——centrifuge口罩——respirator防毒面具——respirator、gasmask磁力搅拌器——magneticstirrer电动搅拌器——powerbasic stirrer烘箱——oven闪点仪——flashpoint tester马弗炉——furnace电炉——heater微波炉电热套——heatingmantle本生灯——Bunsen burner化学反应产物——product设备——apparatuspH值指示剂，氢离子(浓度的)负指数指示剂——pH indicator 卵形瓶——matrass石蕊——litmus石蕊试纸——litmus paper滴定管——burette曲颈甑——retort蒸馏釜——still烤钵——cupel化学反应analysis——分解fractionation ——分馏endothermicreaction ——吸热反应exothermicreaction——放热反应precipitation ——沉淀to precipitate ——沉淀to distil，todistill——蒸馏distillation ——蒸馏to calcine——煅烧to oxidize——氧化alkalinization——碱化to oxygenate，tooxidize ——脱氧,氧化to neutralize ——中和to hydrogenate ——氢化to hydrate——水合，水化to dehydrate——脱水fermentation——发酵solution——溶解combustion——燃烧fusion，melting——熔解alkalinity——碱性isomerism，isomery——同分异物现象hydrolysis——水解electrolysis——电解electrod——e电极anode——阳极，正极cathode——阴极，负极catalyst——催化剂catalysis——催化作用oxidization，oxidation——氧化reducer——还原剂dissolution——分解synthesis——合成reversible——可逆的仪器中英文对照Aging PropertyTester——老化性能测定仪；Amino AcidAnalyzer——氨基酸组成分析仪；Analyzer forClinic Medicine Concentration——临床药物浓度仪；AtomicAbsorption Spectroscopy——原子吸收光谱仪；Atomic EmissionSpectrometer——原子发射光谱仪；AtomicFluorescence Spectroscopy——原子荧光光谱仪；AutomaticTitrator——自动滴定仪；Basic Physics——基本物理量测定；BiochemicalAnalyzer——生化分析仪；Biochemicalanalysis——生物技术分析；Bio-reactor——生物反应器；Blood-gasAnalyzer——血气分析仪；Centrifuge——离心机；ChemiluminescenceApparatus——化学发光仪；CHN Analysis——环境成分分析仪；CO2Incubators ——CO2培养箱；CombustionPropertyTester——燃烧性能测定仪；ConductivityMeter——电导仪；ConstantT emperature Circulator——恒温循环泵；Direct CurrentPlasma Emission Spectrometer——直流等离子体发射光谱仪；DNA Sequencers——DNA测序仪；DNA synthesizer——DNA合成仪；ElectricalProperty Tester——电性能测定仪；ElectroMicroscopy——电子显微镜；ElectrolyticAnalyzer——电解质分析仪；Electron EnergyDisperse Spectroscopy——电子能谱仪；ElectronParamagnetic Resonance Spectrometer——电子顺磁共振波谱仪；Electrophoresis ——电泳ElectrophoresisSystem ——电泳仪ELIASA ——酶标仪Energy DisperseSpectroscopy ——能谱仪Fermenter ——发酵罐Flow Analyticaland Process AnalyticalChemistry——流动分析与过程分析FractionCollector ——部分收集器FreezeDryingEquipment ——冻干机FT-IRSpectrometer ——傅里叶变换红外光谱仪FT-RamanSpectrometer——傅里叶变换拉曼光谱仪Gas Analysis ——气体分析GasChromatograph ——气相色谱仪GC-MS ——气相色谱-质谱联用仪GelPermeationChromatograph——凝胶渗透色谱仪HighPressure/PerformanceLiquid Chromatography ——高压/效液相色谱仪HybridizationOven ——分子杂交仪ICP-MS ——ICP-质谱联用仪InductiveCoupled Plasma Emission Spectrometer ——电感偶合等离子体发射光谱仪Instrument forNondestructive Testing ——无损检测仪Instrument forPolymerase Chain Reaction—— PCR仪InvertedMicroscope ——倒置显微镜IonChromatograph ——离子色谱仪Isotope X-RayFluorescence Spectrometer ——同位素X荧光光谱仪LC-MS ——液相色谱-质谱联用仪MassSpectrometer ——质谱仪MechanicalProperty Tester ——机械性能测定仪Metal/materialelemental analysis ——金属/材料元素分析仪MetallurgicalMicroscopy ——金相显微镜MicrowaveInductive Plasma Emission Spectrometer ——微波等离子体光谱仪Nuclear MagneticResonance Spectrometer ——核磁共振波谱仪OpticalMicroscopy ——光学显微镜Optical PropertyT ester——光学性能测定仪Particle SizeAnalyzer ——粒度分析仪PCR Amplifier——PCR仪Peptidesynthesizer ——多肽合成仪Physical PropertyAnalysis ——物性分析Polaro-graph——极谱仪ProteinSequencer ——氨基酸测序仪Rheo-meter——流变仪Sample Handling ——样品处理Scanning ProbeMicroscopyFG|8oU——扫描探针显微镜Sensors ——传感器Sequencers andSynthesizers for DNA and Protein—— DNA 及蛋白质的测序和合成仪Shaker ——摇床Size ExclusionChromatograph ——体积排阻色谱Surface Science ——表面科学Surface Analyzer——表面分析仪Thermal Analyzer——热分析仪Thermal PhysicalProperty Tester ——热物理性能测定仪Ultrahigh PurityFilter ——超滤器Ultra-lowTemperature Freezer ——超低温冰箱Ultrasonic CellDisruptor ——超声破碎仪UltravioletDetector ——紫外检测仪Ultraviolet Lamp——紫外观察灯Urine Analyzer——尿液分析仪UV-VisibleSpectrophotometer ——紫外-可见光分光光度计Viscometer ——粘度计Voltam-merter——伏安仪Water Test Kits ——水质分析仪X-RayFluorescence Spectrometer ——X射线荧光光谱仪X-Ray Diffractomer——X射线衍射仪分子生物学实验室常用仪器物品英文词汇口罩——respirator试验管——tube耐酸橡胶手套——rubber gloves试管架——test tube rack药匙——lab spoon洗瓶——plastic wash bottle钳子——pliers玻璃搅棒——glass stirring stick扳子——spanne研钵——mortars螺丝刀——screw driver研棒——pestles多用电源插座——multi-purpose socket 冰盒——ice box复印纸——copy paper液氮罐——Dewar flask笔记本——note book记号笔——marker pen培养皿——culture dish夹子——clip皮氏培养皿——petri dish擦镜纸——wiper for lens培养三角瓶——culture flask标签纸——paper label接种环——inoculating loop打火机——lighter接种针——inoculating needle温度计——thermometer过滤灭菌器——syringe filters定时器——timer镊子——forceps棉线（细绳）——cotton rope剪刀——scissors橡皮圈——rubber band解剖刀片——scalpel blade清洁布——rag解剖刀柄——scalpel handle牛皮纸——kraftpaper酒精灯——alcohol burner塑料筐——plastic basker样品推车——lab cart塑料桶——plastic basin保温桶——thermos封口膜——parafilmwrap and dispenser 不锈钢盘——stainless steel tray塑料膜——plastic film搪瓷盘——enamel tray保鲜膜——cling film铝箔纸——aluminum foil烧杯——beaker脱脂棉——absorbent cotton三角瓶、烧瓶——flask容量瓶——volumetric flask铁架台——iron support量筒——graduated cylinder石棉网——asbestos board移液器——pipette玻璃干燥器——glass desiccator移液管——serological pipette三角漏斗——funnel吸耳球——bulb for pipet布氏漏斗——buchnerfunnel移液管架——pipet rack玻璃漏斗——glass funnel离心管架——centrifuge tube rack酸碱滴定管——Burette天平——balance安全帽——safety helmet分析天平——analytical balance工作服——lab coat称量瓶——weighting bottle工作鞋——footware称量纸——weighing paper隔热手套——heat insulation gloves比重计——hydrometer体重计——body weight scales酸度计——pH meterpH试纸——pH indicator paper升降台——lab jack电磁搅拌器——magnetic stirring电磁搅棒——magnetic stirring bar匀浆器——homo-genixe摇床——shaker水浴摇床——reciprocating shaker bath 涡旋振荡器——vortex mixer离心机——centrifuge烘箱——oven低温水浴——refrigerating circulator 冰箱——refrigerator超低温冰箱——ultra-low temperature freezer 培养箱——incubator分光光度计——spectrophotometer石英比色杯——quartz cuvette超声波清洗器——ultrasonic cleaner杂交炉——hybridization oven。
破伤风类毒素蛋白纯化液名词解释
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大口黑鲈的营养需要研究进展____
动物科学现代农业科技2011年第21期大口黑鲈(Micropterus salmoides ),俗称加州鲈,原产于美国加利福尼亚州,隶属鲈形目(Perciformes ),太阳鱼科(Ceutrarchidae )。
20世纪80年代初引入我国,由于其生长快、病害少、耐低温、肉多刺少、味道鲜美及营养丰富等优点,已成为我国养殖的主要淡水鱼品种之一。
大口黑鲈属典型淡水肉食性鱼,迄今尚未成功开发出营养平衡的全价专用饲料,尤其全程使用饲料一直是业界的一大难题,表现在中后期经常出现生长慢、厌食、肝脏疾病等问题[1]。
虽然大口黑鲈的养殖在国内外均有一定的规模,而且饲料成本占养殖成本的比例较高,但有关大口黑鲈营养需要的研究仍十分缺乏[2]。
在国外,大部分大口黑鲈的养殖,均采用比较容易获得的其他肉食性鱼类如鲑鱼和鳟鱼的饲料,而非采用针对大口黑鲈自身营养需要配制的专用饲料[3]。
在国内,养殖户投喂的饲料多以冰鲜下杂鱼和其他动物性饲料为主,这对海洋资源无疑是一种浪费,同时对养殖环境的污染也十分明显,容易引起各种疾病的暴发[4]。
按大口黑鲈2010年的产量测算,我国潜在的鲈鱼专用饲料需求可达20万t/年[1]。
对配合饲料的需要日益增加,亟待进一步全面开展其营养需要的研究。
因此,该文综述了国外内大口黑鲈营养需要的研究进展,并参考其他鱼类的营养需要,比较全面地总结了大口黑鲈对饲料中各营养素的需要量,以期为大口黑鲈专用饲料的研发和配制提供参考。
1大黑鲈对各种营养成分的需要量1.1蛋白质和氨基酸由于没有专门为大口黑鲈开发的商用饲料,目前在国外均采用其他肉性鱼类的饲料(蛋白质含量>40%,鱼粉含量50%~70%)[5-8]。
最早关于大口黑鲈饲料蛋白质营养需要的研究见于1981年[5]。
研究发现,0~1龄的大口黑鲈对饲料中蛋白质的需要量为39.9%~40.8%(基于饲料干物质)。
以饲料中水分含量为10%来计算的话,蛋白质含量为36%~37%(饲料湿重)即可满足1龄及之前的大口黑鲈鱼的生长。
关于禁用生物化学武器的国际公约
1949年12月26日至30日，在苏联伯力城举行了对12名日本 陆军军人因准备和使用细菌武器一案的审判。1954年6月10日， 在沈阳、山西分别举行了军事审判，对731部队162支队队长榊 原秀夫等45名战犯进行了审判。 特别移送
稠州中学 初三<3>班 陈道宽
刀下夺走的不仅是那些冤魂，也给那些幸存者的生命中留下了永远
难以摆脱的噩梦。特别是日本使用了细菌战，造成了无数的无辜者
为此丧命或受伤致残。60年后的今天我们站在这纪念碑前，以无比
悲痛的心情来悼
念这些在细菌战中无辜的
受害者。“前事不忘，
后事之师”的历史之鉴，
要求我们要痛定思痛，
勿忘国耻。 处于新世纪
的今天，我们作为新
关于禁用生物化学武器的国际公约 1907年 第二次海牙和平会议通过《陆战法规与惯例
公约》，特别禁止"使用毒物或有毒的武器"、"使用造成不 必要痛苦的武器、子弹及物质"。
1919年 凡尔塞和约规定"窒息性，有毒的或其他瓦斯 以及类似的液体，物质或器具既已禁用，应严格禁止在德国 制造或运入德国"。
1922年 华盛顿协约规定签字国禁止使用窒息性、有 毒的或其他瓦斯以及一切类似的液体物质或器具。
始发病了，
爷爷的母亲知道这种症状就
是典型的鼠
疫，如果被日本人发现是要
被抓去做实
验的，所以王妈妈就瞒着所
有的人，用了ຫໍສະໝຸດ 多土方法竟奇迹般的救回了王爷爷
的生命。王爷爷是幸运的，
也因为有了
王爷爷一样的幸存者，才能
让我们能更多了了解当年日本帝国主义侵略者在中国土地上的所
半导体微电子专业词汇中英文对照概要
微电子中英文辞典（A-E)半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底) Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）) Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOSDepletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOSDrift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FETMetalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射。
翻译
通过体外提高难溶药物口服生物利用度动态脂质讲解模型来合理选择依靠脂质的药物输送系统摘要作为现代药物发现技术发现的结果，有持续增加一系列药理活性但水溶性很差的，亲脂性的混合物出现。
药剂科学家面对的巨大挑战是使这些混合物变成有充足活性的口服吸收的分子。
其中1个这些分子提高口服利用度最流行的途径是脂质体系统的利用。
不幸的是，在脂质体递送系统区域目前的战略是经验主义。
因此，需要1个简化的体外释放系统来引导亲脂运输构成的选择和合理化递送系统的设计。
为了处理这种需要,1个动态体外脂质分解模型,它能很好的模仿体内脂质消化过程,已经被发展了很多年了。
这种模型已经被广泛的用作于不同脂质递送系统的体外估计，导致我们更好的知道了不同的脂质体和活性剂那个可以更好的作为难溶药物的递送系统。
在这篇文章中，我们主要讨论这种模型的需要，其基本的理论、实践及其局限性,和现有的积累文章的数据。
总之，药物动力学体外脂质分解模型可以提供更好有用的基于脂质的难溶药物的输送系统的轮廓.1介绍作为现代药物发现技术发现的结果,有持续增加难溶药物候选物质的数量，目前超过40%的新药理活性的化学物质是亲脂性的和展示出了难溶于水的性质。
这些分子经常是很低的生物利用度,,尽管它们有药理活性,但它们很难上一个研究和发展的台阶。
药剂科学家面对的巨大挑战是使这些混合物变成有充足活性的口服吸收的分子。
其中1个这些分子提高口服利用度最流行的途径是脂质体系统的利用。
这途径已经过去导致过去很多年抑制免疫力环孢素a生物利用度提高。
脂质药物输送系统提供了很多选择。
目前脂质药物输送系统战略大多数是经验的，需要动物实验和话费很多的钱和时间。
因此，需要1个简化的体外释放系统来引导亲脂运输构成的选择和合理化递送系统的设计。
为了处理这种需要,1个动态体外脂质分解模型,它能很好的模仿体内脂质消化过程,已经被发展了很多年了。
这种模型已经被广泛的用作于不同脂质递送系统的体外估计，导致我们更好的知道了不同的脂质体和活性剂那个可以更好的作为难溶药物的递送系统。
生物化学名词英汉互译
碳水化合物( carbohydrate )单糖( monosaccharide )寡糖( oligosaccharide )多糖( polysaccharide )醛糖(aldose )酮糖( ketose )蔗糖(sucrose )乳糖(lactose ) 麦芽糖(maltose )纤维二糖(cellobiose )多糖(polysaccharides )淀粉(starch ) 直链淀粉( amylose)支链淀粉( amylopectin )纤维素( cellulose )半纤维素( hemicellulose )糖原(glycogen )几丁质(chitin )糖胺聚糖( glycosaminolgycan ) 脂类( lipids )脂肪酸( fatty acid )甘油三酯( glycerol triester )亲水脂类 ( amphipathic lipids )蜡( wax)磷酸甘油脂( phosphoglyceride )甘油磷脂 ( glycerophospholipid )磷脂酰胆碱( phosphatidylcholine )磷脂酰乙醇胺 ( phosphatidylethanolamine )磷脂酰丝氨酸( phoshatidylserine )磷脂酰肌醇 ( phosphatidylinositol, PI )肌醇三磷酸 ( inositol-1,4,5-trisphosphate ，IP3) 二脂酰甘油( diacylglycerol ，DAG)磷脂酸( phosphatidic acid ，PA)磷脂酶A2 ( phospholipase A2，PLA2)磷脂酶C( phospholipase C，PLC)磷脂酶D(phospholipase D，PLD)溶血磷脂(1ysophospholipid) 鞘磷脂(sphingomyelin )神经酰胺( ceramide ) 类固醇(steroids )萜类(terpenes )胆固醇(cholesterol )麦角固醇(ergosterol ) 蛋白质protein 简单蛋白质simple protein 氨基酸amino acid 结合蛋白质conjugated protein 多肽polypeptide 肽peptide 肽键peptide bond 介电常数dielectric constant 范德华力van der waals force 层析法chromatography吸附层析法adsorption chromatography 分配系数partition or distribution confficient 活性肽active peptide 二硫键disulfide bond 兼性离子zwitterion 一级结构primary structure 疏水效应hydrophobic effectSDS- 聚丙烯酰胺凝胶电泳SDS-PAGE毛细管电泳( capillary eletrophoresis, CE)离子交换层析ion exchange chromatography 同源蛋白homologous protein 构象conformation 构象角conformatiomal angle 糖脂( glycolipid ) 糖基甘油酯( glycosylglyceride )鞘糖脂( glycosphingolipid ) 脑苷脂( cerebroside )N-乙酰神经氨酸( N-acetylneuraminic acid ) 神经节苷脂( ganglioside )硫酸脑苷脂( cerebroside sulfate ) 糖蛋白( glycoproteins )蛋白聚糖( proteoglycans )生物膜( biomembrane) 膜脂( membrane lipids )膜蛋白( membrane proteins )脂质双层分子( lipid bilayers )外周蛋白( peripheral protein )外源性( extrinsic protein )内在蛋白( integral protein )内源性蛋白( intrinsic protein ) 跨膜蛋白( transmembrane proteins )流动镶嵌模型( fluid mosaic model ) 简单扩散( simple diffusion )协助扩散( facilitated diffusion ) 被动运输( passive transport )主动运输( active transport ) 介导性运输( mediated transport )非介导性运输( nonmediated transport ) 载体蛋白( carrier protein )通道蛋白( channel protein ) 离子通道( ionic channel )离子载体( ionophore )内吞作用( endocytosis ) 胞饮作用”(pinocytosis )外排作用(exocytosis )基团转移( group translocation ) 脂蛋白( lipoprotein )染色体( chromosome)染色质( chromatin ) 组蛋白( histone )核小体( nucleosome)病毒( virus ) 噬菌体( bacteriophage 或简称phage)变性denaturation 沉降系数( S)Svedberg(S) 抗体antibody 亲和层析法affinity chromatography盐溶salting in 盐析salting out 二级结构secondary structure三级结构tertiary structure - 螺旋-helix超二级结构super-secondaery structure 结构域structure domain 氢键hydrogen bend 疏水相互作用hydrophoblic interaction 肌红蛋白myoglobin 寡聚蛋白质oligomeric protein 无规则卷曲randon coil 复性renaturation 镰刀状细胞贫血病sickle-cell anermia 酶( enzyme)酶的专一性( specificity )单体酶(monomeric enzyme)寡聚酶(oligomeric enzyme) 多酶复合体系( multienzyme system )酶活性中心( active center of enzyme ) 催化基团( catalytic site )酶原(zymogeno r proenzyme)诱导契合(induced-fit theory )抗体酶( abzyme)酸碱催化( acid-base catalysis ) 共价催化(covalent catalysis) 激活剂( activator )抑制剂( inhibitor ) 可逆抑制( reversible inhibition ) 竞争性抑制作用( competitive inhibition )非竞争性抑制作用( noncompetitive inhibition ) 调节酶( modulator ) 别构酶( allosteric enzyme ) 同配位效应( isosteric effect ) 变构效应( allosteric effect ) 变构激活( allosteric activation ) 正协同效应( positive cooperative effect )负协同效应( negative cooperative effect )效应物( effector ) 维生素( vitamin ) 维生素缺少症( avitaminosis ) 调节中心( regulatory center ) 催化亚基( catalytic subunit ) 调节亚基( regulatory subunit ) 诱导酶( induced enzyme ) 结构酶( structural enzyme ) 核酶( ribozyme ) 辅酶( coenzyme) 比活力( specific activity )脱氧核酶( deoxyribozyme ) 酶工程( enzyme engineering ) 酶纯度( purity of enzyme ) 酶活力( enzyme activity )- 淀粉酶( -amylase ) - 淀粉酶( -amylase ) 脱支酶( debranching enzyme ) 淀粉的磷酸化酶( amylophosphorylase )糖酵解( glycolysis ) 三羧酸循环( tricarboxylic acid cycle ，TCA)磷酸戊糖途径( pentose phosphate pathway ，PPP) 生物氧化( biological oxidation )烟酰胺脱氢酶类( nicotinamide dehydrogenase ) 黄素脱氢酶类( flavin dehydrogenase ) 铁硫蛋白类( iron-sulfur protein ) 泛醌( ubiquinone ) 细胞色素类( cytochromes ) 细胞色素氧化酶( cytochromeoxidase ) 鱼藤酮( rotenone ) 安密妥( amytal ) 杀粉蝶菌素( piericidine ) 抗霉素A( antimycin A ) 底物水平磷酸化( substrate-level phosphorylation ) 氧化磷酸化( oxidative phosphorylation ) 化学渗透假说( chemiosmotic coupling hypothesis ) 化学偶联假说( chemical coupling hypothesis ) 构象偶联假说( conformational coupling hypothesis )甘油-磷酸穿梭途径( glycerophosphate shuttle ) 苹果酸- 天冬氨酸穿梭途径( malate- aspartate shuttle )异柠檬酸穿梭途径( isocitrate shuttle )能荷( energy charge ) 肉碱(肉毒碱，carnitine ) 乙醛酸体(乙醛酸循环体，glyoxysome ) 乙醛酸循环( glyoxylate cycle ) 酮体( ketone bodies ) 饱和脂肪酸的从头合成( de novo synthesis ) 谷氨酸脱氢酶( glutamate dehydrogenase, GDH ) 转氨基作用( transamination ) 转氨酶( transaminase ) 磷酸吡哆醛( pyridoxal phosphate ，PLP) 谷丙转氨酶( glutamic pyruvic transaminase，GPT或alanine transaminase ALT) 谷草转氨酶( glutamic oxaloacetic transaminase ，GOT或aspartate transaminase ，AST) γ-谷氨酰-半胱氨酸合成酶( γ-glutamyl systeine synthetase ，γ-ECS)谷胱甘肽( glutathione ) 谷胱甘肽合成酶( glutathione synthetase ) 生物固氮( biological nitrogen fixation )固氮酶( nitrogenase )自身固氮微生物( diazatrophs ) 共生固氮微生物( symbiotic microorganism ) 硝酸还原酶( nitrate reductase ，NR) 亚硝酸还原酶( nitrite reductase ，NiR)谷氨酸合酶( glutamate: oxo-glutarate aminotransferase ，GOGA)T谷氨酰胺合成酶( glutamine synthetase ，GS) 腺苷-5'- 磷酸硫酸酐( adenosine-5'-phosphosulfate ，APS) 3'- 磷酸腺酐-5'- 磷酰硫酸( 3'-phosphoadenosine-5'-phosphosulfate ，PAPS) 5- 磷酸核糖焦磷酸( phosphoribosyl pyrophosphaet ，PRPP) 天冬氨酸转氨甲酰酶( aspartate trsnscarbamoy lase ) 腺嘌呤磷酸核糖转移酶( adenine phosphoribosyl fransferase ，APRT)黄嘌呤- 鸟嘌呤磷酸核糖转移酶( hypoxanthineguanine phosphoribosyl transferase ，HGPR)T 谷胱甘肽还原酶( glutathione reductase ，GR) 谷氧还蛋白( glutaredoxin ) 谷氧还蛋白还原酶( glutaredoxin reductase ) 胸腺嘧啶核苷酸合酶( thymidylate synthase )DNA复制( DNA replication ) 中心法则( central dogma ) 冈崎片段( Okazaki fragement ) 前导链( leading strand ) 滞后链( lagging strand ) 引物( primer ) 复制叉( replication fork ) 半保留式复制( semiconservative replication ) 模板( template ) 反转录( reverse transcription )转换( transition ) 颠换( transversion ) 错配修复( mismatch repair ) 核苷酸切除修复( nucleotide excision repair )碱基切除修复( base excision repair ) 同源重组( homologous recombination ) 特异性重组( site-specific recombination ) 转座子( transposon ) 启动子( promoter ) 限制性内切酶( restriction endonuclease ) 修饰( modification ) 单链结合蛋白( single stranded binding proteins, SSB ) 遗传密码( genetic code ) 读码框架( reading frame )移码突变( frame-shift mutation ) 简并性( degeneracy ) 同义密码子( synonymous codon) 起始密码子( initiatlon codon ) 终止密码子( termination codon ) 摆动假说( wobble hypothesis) 同功受体tRNA( isoaccepting tRNA ) 反密码子( anticodon ) 多核糖体( polyribisome ) 氨酰-tRNA合成酶( aminoacyl-tRNA synthetase ) Shine –Dalgarno 序列( Shine –Dalgarno sequence ) 起始因子( initiation factor ) 延伸因子( elongation factor ) 释放因子( release factor ) 转肽( transpeptidation ) 移位( translocation ) 分子伴侣( molecular chapeones ) 共翻译转移( co-translational translocation ) 翻译后转移( post-translational translocation ) 信号肽( signal sequence ) 信号识别颗粒( signal recognition particle SPR ) 代谢 (metabolism ) 代谢调节 ( metabolic regulation ) 共价修饰 ( covalent modification ) 反馈抑制 ( feedback inhibition ) 操纵子模型 (operon model ) 衰减作用 ( attenuation ) 级联放大作用 (amplification cascade ) 变(别)构效应 (allosteric effect )诱导和阻遏 (induction and repression ) 蛋白激酶C (protein kinase C ，PKC)第二信使 (second messenger )受体 ( receptor )G 蛋白 (guanosine triphosphate-binding protein )信号转导 ( signal transductionphospholipase C ，PLC) 钙调素（calmodulin ，CaM）磷酯酶。
半导体微电子专业词汇中英文对照
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟-数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide (As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT)双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross-section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）)Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1)尺寸(2)量钢(3)维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distribution 分布Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual-polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量(E-K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM (EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H-MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination (1)照明(2)照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane (1)薄腊，膜片(2)隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative-temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly-silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电)体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence(value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。
半导体微电子专业词汇中英文对照概要
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum（Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光,调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide （As）砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT)双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body—centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom—up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built—in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2）二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically-Polish 化学抛光Chemically—Mechanically Polish （CMP) 化学机械抛光Chemical vapor deposition （cvd）化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip—flop 时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common—base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common—mode gain 共模增益Common—mode input 共模输入Common—mode rejection ratio （CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-Semiconductor Field—Effect—Transistor（CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design （CAD)/test(CAT）/manufacture（CAM）计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge）导带(底）Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant—source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross—section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J））Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel （dB）分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1）尺寸（2）量钢（3）维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double—diffusive MOS(DMOS）双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV）电子伏Electro-optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter—coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量—动量（E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric （低）共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM （EPROM)可搽取（编程)存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里—珀罗放大器Face — centered 面心立方Fall time 下降时间Fan-in 扇入Fan—out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip—chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs）砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation—recombination 产生-复合Geometries 几何尺寸Germanium(Ge）锗Gold 金Graded 缓变的Graded (gradual）channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn — effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell — effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High—performance MOS(H-MOS）高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination （1）照明（2)照明学Image — force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量（微分电阻）In-contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide （ITO）铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET）绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET（JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master—slave D flip—flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure （MTBF）平均工作时间Mechanical 机械的Membrane （1)薄腊，膜片（2）隔膜Megeto - resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor （MOS）金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System （MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module（MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature—coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发(易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP)运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over—current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak—point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永久存储电路Period 周期Permeable - base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎(效应) Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P—N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电）势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print—circuit board（PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2) 二氧化硅Silicon Nitride(Si3N4）氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat(PT) 比热Spectral 光谱Spectrum 光谱(复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of—the—art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导(电）体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic—aperture 合成孔径System 系统Technical 技术的,工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick— film technique 厚膜技术Thin— film hybrid IC 薄膜混合集成电路Thin—Film Transistor（TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging（stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel（ing）隧道(穿）Tunnel current 隧道电流Turn — off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元)胞Unity- gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence（value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave—particle duality 波粒二相性Wear—out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。
半导体微电子专业词汇中英文对照
半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue（Analog）comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide （As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT）双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body-centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn—in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准,检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2）二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically—Polish 化学抛光Chemically—Mechanically Polish （CMP）化学机械抛光Chemical vapor deposition (cvd）化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip-flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益Common-mode input 共模输入Common—mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect—Transistor(CMOS) 互补金属氧化物半导体场效应晶体管Computer-aided design (CAD）/test(CAT）/manufacture（CAM) 计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带（底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant—source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross—section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术（Cz法直拉晶体J）) Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel （dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade) /Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference—mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension （1)尺寸（2）量钢（3)维,度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct—coupling 直接耦合Direct-gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double-diffusive MOS(DMOS）双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振,双极化Duty cycle 工作周期Dual-in—line package （DIP）双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory（E2PROM）电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron—beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt （eV）电子伏Electro—optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter—coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤)效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric （低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM （EPROM)可搽取（编程）存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry—Perot amplifier 法布里-珀罗放大器Face - centered 面心立方Fall time 下降时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁(变）噪声Flip-chip 倒装芯片Flip— flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式,表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium-Arsenide(GaAs）砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation—recombination 产生—复合Geometries 几何尺寸Germanium(Ge）锗Gold 金Graded 缓变的Graded （gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High-performance MOS(H—MOS）高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination （1)照明(2）照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻）In—contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET（IGFET）绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side—wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode（LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass - action law 质量守恒定律Master—slave D flip—flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure (MTBF) 平均工作时间Mechanical 机械的Membrane （1）薄腊，膜片（2）隔膜Megeto - resistance 磁阻Mesa 台面MESFET—Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS）金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS) 微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi-chip IC 多芯片ICMulti-chip module(MCM）多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片(裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature—coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP）运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of-contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over—current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak—point voltage 峰点电压Peak voltage 峰值电压Permanent—storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist (光敏)抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P—N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential (电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board（PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM）脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio—frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管(器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石（Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Scattering 散射Schematic layout 示意图,简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shaping 成型Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide （SiO2）二氧化硅Silicon Nitride（Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat（PT）比热Spectral 光谱Spectrum 光谱（复数）Speed—power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the—art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导（电）体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的，工艺的Telecommunication 远距通信，电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin—Film Transistor(TFT）薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress）晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel（ing）隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原（元）胞Unity- gain frequency 单位增益频率Unilateral—switch 单向开关Vacancy 空位Vacuum 真空Valence(value）band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave—particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X—ray X射线Yield 成品率Zinc 锌。
悬浮区熔法生长锗单晶
悬浮区熔法生长锗单晶闫萍;庞炳远;索开南【摘要】采用悬浮区熔工艺,生长出了最大直径（等径部分）22 mm的〈100〉晶向锗单晶,单晶等径长度20 mm,总长度80 mm。
为减小锗单晶生长中的重力作用,并提高温度梯度以增强结晶趋动力,特别设计了锗单晶生长用的加热线圈,包括设计线圈的内径为18 mm,线圈的下表面设计为0°的平角,上表面设计成9°的锥形等。
改进后的加热线圈有效地减小了熔体的质量,消除了熔体因重力作用而引起的下坠及因下坠而在上界面形成的无法熔化的腰带。
实验表明,锗单晶生长对功率变化非常敏感,生长过程中极易引入位错,但在有大量位错的情况下,晶棱能依然保持完好。
%The germanium crystal with diameter 22 mm and 20 mm long has been gown. by floating zone （FZ） method. The grown crystal is with 〈100〉 orientation and a total length of 80 mm. As the germanium melt is more than twice as dense as liquid silicon, to decrease the weight effect of the melt and to increase the temperature gradient in the crystal growth process, a new induction coil with a fiat bottom side, a conical upper side of 9° and a hole diameter of 18 mm was built. With this induction coil to grow germanium crystal, the mass of the melt is reduced effectively and the melt sinkage as well as the waistband which is difficult to melt is avoided. The experiment result shows that the crystallization phase boundary is very sensitive to power fluctuations and the dislocation is easy to form. in germanium single crystal growth. However, when large quantities of dislocation exist in the crystal the crystal ridge can still keep clear.【期刊名称】《电子工业专用设备》【年(卷),期】2012(041)007【总页数】4页(P36-39)【关键词】锗单晶;悬浮区熔;纯度;位错【作者】闫萍;庞炳远;索开南【作者单位】中国电子科技集团公司第四十六研究所,天津300220;中国电子科技集团公司第四十六研究所,天津300220;中国电子科技集团公司第四十六研究所,天津300220【正文语种】中文【中图分类】TN304.053锗晶体主要被用作红外光学材料、制作γ射或X射线探测器及高效太阳能电池的衬底材料，由于这种材料的稀缺性且价格十分昂贵，其市场份额远远小于硅材料。
台湾植物多酚类之脑神经保护剂
Tangeretin can against glutamate and glucose deprivation.
The present study was divided into several parts includes Chinese herbal medicine, the extracts of Taiwan folk medicine plant or
Taiwan botany, and their active components.
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用二元羧酸及其盐类从烃原料中脱除金属[发明专利]
![用二元羧酸及其盐类从烃原料中脱除金属[发明专利]](https://img.taocdn.com/s3/m/02ef797cdd88d0d233d46ae9.png)
专利名称：用二元羧酸及其盐类从烃原料中脱除金属专利类型：发明专利
发明人：约翰·G·雷诺兹
申请号：CN89102016.0
申请日：19890307
公开号：CN1036981A
公开日：
19891108
专利内容由知识产权出版社提供
摘要：使用二元羧或其盐类从烃原料中脱除金属，特别 是钙和铁。
在进行工艺处理之前，用所说酸的水溶液 从原料中萃取出金属。
草酸是较佳的化合物。
申请人：切夫尔昂研究公司
地址：美国加利福尼亚州
国籍：US
代理机构：中国国际贸易促进委员会专利代理部
代理人：段承恩
更多信息请下载全文后查看。
硫酸软骨素英语
硫酸软骨素英语Title: Chondroitin Sulfate: A Comprehensive OverviewChondroitin sulfate, a naturally occurring compound found in the cartilage of animals, has garnered significant attention in the field of healthcare and nutrition. This bioactive substance belongs to a class of compounds known as glycosaminoglycans, which play a crucial role in maintaining the structure and function of connective tissues, including cartilage, tendons, and ligaments.The biochemistry of chondroitin sulfate is fascinating. It consists of repeating disaccharide units composed of a glucuronic acid molecule linked to an amino sugar, usually N-acetyl-galactosamine. These units are linked together by glycosidic bonds, forming long, chain-like molecules that are integral to the structural integrity of cartilage. The sulfate groups attached to these molecules contribute to their negative charge, which is essential for attracting and retaining water, thus maintaining the hydration and elasticity of cartilage.The physiological functions of chondroitin sulfate are diverse. In cartilage, it acts as a lubricant, reducing friction between joints and promoting smooth movement. Additionally, chondroitin sulfate helps in the retention of water, thereby maintaining the compressive stiffness and resilience of cartilage. Its anti-inflammatory properties have also been recognized, making it a potential therapeutic agent for various inflammatory conditions.The use of chondroitin sulfate in medicine dates back several decades. It is commonly prescribed as a dietary supplement or in combination with other agents for the management of osteoarthritis, a degenerative joint disease affecting millions worldwide. Osteoarthritis is characterized by the breakdown of cartilage, leading to pain, stiffness, and loss of joint function. Chondroitin sulfate is believed to slow down the progression of cartilage degradation and promote its repair by stimulating the production of cartilage-building cells.However, the exact mechanism of action of chondroitin sulfate in osteoarthritis remains elusive. Some studies suggest that it may interfere with the enzymes involved incartilage breakdown, while others propose that it may enhance the synthesis of cartilage components. Despite the lack of a fully elucidated mechanism, numerous clinical trials have demonstrated the efficacy of chondroitinsulfate in relieving osteoarthritis symptoms and improving joint function.Apart from its therapeutic uses, chondroitin sulfate is also widely used in cosmetics and skin care products. Its ability to retain water and improve skin elasticity makes it an ideal ingredient for anti-aging creams and lotions. Its anti-inflammatory properties also contribute to its popularity in skin care, as it helps to soothe irritated and inflamed skin.However, it's important to note that chondroitinsulfate is not a cure-all for joint problems. Its effectiveness may vary depending on the individual, the severity of the condition, and other factors. Additionally, like any other dietary supplement or medication, it may cause side effects in some individuals, although these are generally mild and transient.In conclusion, chondroitin sulfate is a bioactive compound with diverse physiological functions and potential therapeutic applications. Its role in maintaining cartilage health and function, as well as its anti-inflammatory properties, make it a valuable tool in the management of osteoarthritis and other inflammatory conditions. With further research and clinical trials, chondroitin sulfate may continue to reveal new therapeutic benefits and expand its use in healthcare.。
接骨木提取物花青素
接骨木提取物花青素英文回答：Elderberry extract, also known as Sambucus extract, is derived from the flowers of the elderberry plant. It isrich in a group of antioxidants called anthocyanins, which are responsible for its vibrant purple color. These anthocyanins have been widely studied for their potential health benefits.One of the main advantages of elderberry extract is its immune-boosting properties. It has been shown to enhance the production of cytokines, which are small proteins that play a crucial role in regulating the immune response. By stimulating the immune system, elderberry extract can help defend against viral and bacterial infections.In addition to its immune-boosting effects, elderberry extract also has anti-inflammatory properties. Chronic inflammation is associated with various health conditions,including heart disease, diabetes, and certain types of cancer. The anthocyanins in elderberry extract have been found to inhibit the production of inflammatory markers, reducing the risk of chronic inflammation.Furthermore, elderberry extract has been studied forits potential anti-cancer properties. Some research suggests that the anthocyanins in elderberry extract may help prevent the growth and spread of cancer cells. They are believed to work by inhibiting the enzymes involved in cancer cell proliferation and inducing apoptosis, or programmed cell death, in cancer cells.Moreover, elderberry extract has been shown to haveanti-viral properties, particularly against certain strains of the influenza virus. It has been found to inhibit the entry of the virus into host cells, preventing viral replication and reducing the severity and duration of flu symptoms. This makes elderberry extract a popular natural remedy for colds and flu.In addition to its health benefits, elderberry extractis also used in the food and beverage industry. It is commonly used to flavor various products such as jams, jellies, and wines. The vibrant purple color of elderberry extract also makes it a popular natural food coloring agent.中文回答：接骨木提取物，也被称为接骨木提取物，是从接骨木植物的花中提取得到的。
青蒿素介绍英文作文
青蒿素介绍英文作文Artemisinin, also known as Qinghaosu, is a natural compound extracted from the sweet wormwood plant. It has been used for centuries in traditional Chinese medicine to treat a variety of illnesses, including fever, malaria, and inflammation. However, it wasn't until the 1970s that artemisinin was first isolated and studied for its anti-malarial properties.Artemisinin works by targeting the malaria parasite at multiple stages of its life cycle. It is particularly effective against the Plasmodium falciparum strain, which is responsible for the majority of malaria-related deaths worldwide. Artemisinin kills the parasite by generating free radicals that damage the parasite's cell membranes and DNA.Artemisinin is often used in combination with otheranti-malarial drugs to increase its effectiveness and reduce the risk of drug resistance. This combinationtherapy is recommended by the World Health Organization (WHO) as the most effective treatment for malaria.In addition to its anti-malarial properties,artemisinin has also been studied for its potential in treating other diseases, including cancer. Research has shown that artemisinin can selectively target cancer cells and induce apoptosis, or programmed cell death, in these cells. However, more research is needed to fully understand the potential of artemisinin in cancer treatment.Despite its effectiveness, artemisinin is not without its limitations. The compound has a short half-life, meaning that it is quickly metabolized and excreted from the body. This makes it difficult to maintain therapeutic levels of the drug in the bloodstream. Additionally, the production of artemisinin is limited by the availability of the sweet wormwood plant, which is primarily grown in China and Vietnam.In conclusion, artemisinin is a powerful anti-malarial drug with potential applications in the treatment of otherdiseases. Its discovery and development have had a significant impact on global health, particularly in the fight against malaria. However, ongoing research is needed to fully understand the drug's potential and address its limitations.。
硫酸软骨素钠提取过程
硫酸软骨素钠提取过程英文回答：The process of extracting chondroitin sulfate sodium involves several steps. Firstly, the raw material, which is usually derived from animal cartilage, needs to becollected and processed. This can be done by grinding the cartilage into a fine powder and then subjecting it to enzymatic treatment to break down the complex structure of the cartilage.Once the raw material is prepared, it is then subjected to a series of chemical treatments to extract thechondroitin sulfate. This typically involves the use of solvents such as water or alcohol to dissolve thechondroitin sulfate from the cartilage powder. The mixtureis then filtered to remove any impurities.After the filtration step, the chondroitin sulfate solution is concentrated to increase its purity and potency.This can be done by evaporating the solvent under reduced pressure or by using techniques such as ultrafiltration or reverse osmosis.Once the chondroitin sulfate solution is concentrated,it can be further purified by methods such as precipitation, chromatography, or membrane filtration. These techniques help to remove any remaining impurities and isolate the chondroitin sulfate in its pure form.Finally, the purified chondroitin sulfate is dried to remove any remaining moisture and converted into a powderor granular form. It can then be packaged and used for various applications, such as dietary supplements or pharmaceutical formulations.中文回答：硫酸软骨素钠的提取过程包括几个步骤。
输血科的建设与发展
中国输血简史
国务院批准实行公民义务献血 1984 卫生部颁布《献血体格检查参考标准》 1990 组建成立“中国输血协会” 1985 卫生部建立血型参比实验室, 上海 1998《献血法》实施
1978
输血文献
1951《输血与血库》 中国医学科学院，肖星甫著 1963《输血及血液学》附刊 天津输血研究所 1977《输血及血液学》创刊 中国医学科学院 1978《国外医学· 输血及血液学》 中华医学会
业务范围
微机室
各种资料的保存、教学 和科研、临床各种数据处理等。 值班室 电视、上网、音乐。 物品库房 库存的各种用品。
业务范围
HLA实验室 HLA-A、-B、-C基因分型 (Ⅰ类抗原) HLA-DR、DQ 、DP基因分型(Ⅱ抗原) 群体反应性抗体（PRA） 淋巴毒交叉配合试验 融合基因检测 方法： HLA-ABDR微量PCR-SSP试验 微量序列特异性引物聚合酶链反应
业务范围
血细胞分离室 治疗性血液单采术： 1、治疗性红细胞单采术 2、治疗性白细胞单采术 3、治疗性血小板单采术 治疗性血液置换术： 1、治疗性红细胞置换术 2、治疗性血浆置换术 Baxter公司的CS-3000 plus血细胞分离机
业务范围
HIV1/2初筛实验室
程序： 1、ELISA法初筛 2、另外一种试剂复查 3、报告医务处 4、报告临床科室并会诊 5、填报HIV初筛阳性送检单 6、标本送省疾控中心
贫血： 红细胞生成减少所致贫血的检测 溶血性贫血的检测 血红蛋白异常所致溶血性贫血检测 自身免疫性溶血性贫血检测
输血检验室
溶贫：红细胞膜缺陷 常见疾病：1、遗传性球形红细胞增多症 2、遗传性椭圆形红细胞增多症 3、遗传性口形红细胞增多症 4、阵发性睡眠性血红蛋白尿(PNH) 相关试验：1、红细胞孵育渗透脆性试验 2、酸溶血试验(Hams Test) 3、糖水溶血试验 4、热溶血试验 5、红细胞渗透脆性试验
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Crucible-free pulling of germanium crystalsMichael W ¨unscher Ã,Anke L ¨udge,Helge RiemannLeibniz Institute for Crystal Growth,Max-Born-Str.2,12489Berlin,Germanya r t i c l e i n f oAvailable online 10November 2010Keywords:A1.Heat transferA2.Floating zone technique A2.Growth from meltB2.Semiconducting germaniuma b s t r a c tCommonly,germanium crystals are grown after the Czochralski (CZ)method.The crucible-free pedestal and floating zone (FZ)methods,which are widely used for silicon growth,are hardly known to be investigated for germanium.The germanium melt is more than twice as dense as liquid silicon,which could destabilize a floating zone.Additionally,the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth.We found that the lower heat radiation of Ge can be compensated by the increased convective cooling of a helium atmosphere instead of the argon ambient.Under these conditions,the screw-like growth could be avoided.Unfortunately,the helium cooling deteriorates the melting behavior of the feed rod.Spikes appear along the open melt front,which touch on the induction coil.In order to improve the melting behavior,we used a lamp as a second energy source as well as a mixture of Ar and He.With this,we found a final solution for growing stable crystals from germanium by using both gases in different parts of the furnace.The experimental work is accompanied by the simulation of the stationary temperature field.The commercially available software FEMAG-FZ is used for axisymmetric calculations.Another tool for process development is the lateral photo-voltage scanning (LPS),which can determine the shape of the solid–liquid phase boundary by analyzing the growth striations in a lateral cut of a grown crystal.In addition to improvements of the process,these measurements can be compared with the calculated results and,hence,conduce to validate the calculation.&2010Elsevier B.V.All rights reserved.1.IntroductionGermanium crystals are mainly used for infrared optics,gamma/X-ray detectors or as substrate for high-power solar cells.Nevertheless the market is much smaller,than it is for silicon,due to the rareness of germanium and the associated high price.These crystals are grown by the CZ technique.Especially for high-purity crystals as used in detector technologies with a net doping of 1010atoms per cm 3,a sophisticated CZ process is needed to reach this goal.The FZ and pedestal techniques are known to reduce impurities depending on the segregation coefficient.Additionally contamination with impurities from the machine is reduced,because only the gas is in direct contact with the melt.The goal of our research is to find a way to use the advantages of the crucible-free methods for germanium.From the viewpoint of growing germanium crystals with the FZ technique,the main disadvantage of Ge compared to silicon is the double melt density for a nearly equal surface tension.This reduces the height of the melt zone compared to silicon,which can be seen from the numerical simulation shown in Fig.1.Investigations of the FZ process show that the lower melting point increases the risk ofthermo-technical destabilization during the growth,which yields to screw-like growth of the crystal.The heat loss at melting point temperature is four times smaller for germanium compared to silicon.To overcome the screw-like growth we had to optimize our silicon FZ process for the needs of germanium.The instability did not appear,when using the pedestal technique.Here,the challenge was to find a process which could be run without ‘‘freezing’’in the center.For that purpose the software FEMAG-FZ was adapted to calculate the pedestal process.The results were compared with the experiments to validate the model.2.PedestalThe pedestal method is more stable than the FZ process.Clearly,the diameter of the growing crystal can never be bigger than the diameter of the hole in the induction coil.In Fig.2a,the crystal is pulled upwards from the melt through the induction coil,which melts the feed rod from the top (see Fig.2b).We have examined the conditions for growing germanium crystals from bigger feed rods (diameter 450mm)with the pedestal method.For this method we have to find the way between two process boundaries,spilling out of the melt or the freezing of the melt in the central region.The freezing of the center is hard to predict,because it isContents lists available at ScienceDirectjournal homepage:/locate/jcrysgroJournal of Crystal Growth0022-0248/$-see front matter &2010Elsevier B.V.All rights reserved.doi:10.1016/j.jcrysgro.2010.10.200ÃCorresponding author.E-mail address:wuenscher@ikz-berlin.de (M.W ¨unscher).Journal of Crystal Growth 318(2011)1039–1042covered with melt.Numerical studies can help to optimize the process and to get a better physical understanding of the process.It can also qualitatively help to change the process parameters.In Fig.3,three different realizations of a growth process are shown.A reduction in the feed rod diameter (compare left with middle picture)has two negative effects.On the one hand,it reduces the distance between the two phase boundaries,which increases the risk of freezing the melt in the center and conse-quently break the crystal growth process.On the other hand,it increases the melt meniscus,which increases the risk of spillage.Through lowering the crystal (cmp.middle with right),there is a tendency of the temperature field to shorten the meltable volume.The maximum temperature of the melt is lowered as well.From this solution where the melting point temperature is not reached along the melting front,one can see that freezing is likely possible.Furthermore,it could be supposed that the feed rod would not be fully molten during the experiment.Such process conditions were observed in some experiments.From this we can summarize that an experiment should be conduct with a more stretched zone to get more power into the central part.In order to check the calculation results,one needs experimental data.The lateral photo-voltage scanning (LPS)method allows to measure the striations of the crystal.These striations follow the solidification interface,which nearly equates with the melting point isotherm of the calculated temperature field.As input parameters from the experiment,the simulation takes the position of the triple points and the melt surface as a 2D curve,which are measured from process pictures like Fig.2.The process picture is not symmetric,but,using the left or right melt surface does not show big influence on the simulation results.The melting point isotherms can now be put into the striation pictures.For the crystal (Fig.5),there is a very good agreement between experiment and calculation.The agreement for the feed rod is not as good (Fig.4),but it shows qualitatively the ‘‘w’’shape from the experiment.Also the hill in the center has the same height,therefore,freezing can be well predicted.There are two main deviations from the experiment.The end of the isotherm is more steep than in experiment and the minimum of the isotherm is not big enough.Maybe both deviations are related to the unconsidered melt convection.3.Floating zoneThe crucible-free floating zone method needs a thermally and mechanically stable melt zone.Therefore,a smooth melting of the feed rod as well as a tunable shape of melt zone and crystallization phase boundary during the whole process is needed.2 4 6 8 10 12 1410152025z [m m ]r [mm]Silicon Germaniumparison of the melt surface between germanium and silicon based on calculation of theLaplace–Young equation [1].Fig.2.Picture of the pedestal process for a 15mm crystal pulled from a 50mm feed rod.(a)Top view with upper triple point (triangle);(b)view from below the induction coil (dashed line shows bottom edge)with themarked lower triple point (circle).Fig.3.Calculated temperature field for a 25mm crystal;left:smaller feed rod;middle:optimized starting configuration;right:triple point moved downward by 1mm.M.R.W¨u nscher et al./Journal of Crystal Growth 318(2011)1039–10421040As starting point for the growth of germanium crystals,we used a well-performing setup from silicon crystal growth.For silicon,it is easily possible to grow crystals of 20mm and more with this inductor.For germanium,we got a destabilization of the melt zone during the growth of the cone.Both are compared in Fig.6.The phase boundary line tilts a bit and a buckle is growing out (Fig.6,left).After a few millimeters of pulling,the melt spills out at this buckle.It was only possible to grow small crystal,less than the hole diameter with this induction coil.In the next experiment we tried to tune the accessible parameter during the experiment,e.g.rotation rate and pulling speed.No stabilization was achieved with this approach.In a next step a compensation of the differences in material properties between silicon and germanium was tried.Therefore,the silicon needle-eye process was optimized using the depen-dencies of numerical simulations with germanium material para-meter.As a result new coil designs were tried.The important parameters of the induction coil are shown in Fig.7a.The highest inductive heating is achieved below the edge of the induction coil.Therefore,geometrical changes in this region are very effective.At first the hole diameter of the coil was reduced from 15to 10mm.In principle the coil was scaled down to fit thereduced melt height.The modification shows the same results of screw-like growth starting from a diameter of 15mm.With the reduction of the main slit and the additional side slits the rotational symmetry of the coil was increased with noeffect.Fig.4.Left:feed rod 50mm.Right:LPS measurement of the striations with calculated phase boundary (solidline).Fig.5.Left:crystal with 15mm diameter.Right:LPS measurement of striations with calculated phase boundary (solidline).parison between germanium (left)and silicon (right)for the sameexperimental configuration (feed rod diameter 20mm)at the beginning of the process.The silicon crystal was grown for several centimeters,whereas the germanium process spilled out shortlyafter.Fig.7.(a)Parameter for the induction coil design.(b)Induction coil with a conical angle of 71.M.R.W¨u nscher et al./Journal of Crystal Growth 318(2011)1039–10421041A new induction coil with a conical bottom side of 71angle (Fig.7b),formerly flat,was built.Together with an increased hole diameter of 17.5mm,germanium crystals of 21mm were pulled.A further increase in diameter caused the occurrence of the described instable growth.The last design came from considering the difference in melting point temperatures,1209K for germanium and 1687K for silicon.Beside the phase boundary at the surface,the heat loss of germanium is reduced by a factor of four considering Stefan–Boltzmann’s law for the melting point temperatures.Accordingly,the temperature gra-dient for germanium is lower and the crystallization phase boundary is more sensitive to temperature fluctuations.Concordantly heat loss from the melt is lower than for the solid body,because of the lower emissivity of the liquid,therefore,deviations from a horizontal three phase boundary are stabilized or get even emphasized,which results in bulge growth.From this consideration the induction coil was chosen to be conical,to reduce the coupling of the coil with the melt and,therefore,reduce the heating of the rim.The effect was not strong enough and also an increase of the angle,for intensifying this effect did not lead to the expected result.With the same goal of cooling the rim,argon-gas was used for convective cooling by blowing 5–10l/min to the side of the crystal.The maximum volume flow and also an increase to four nozzles did not show the desired effect.Only a shaking of the melt surface was visible.Another mean to increase the cooling effect of the gas is the increase of the pressure.Unfortunately this evinced the problem of spike creation.Spikes (Fig.8,left)are small unmolten parts of the feed rod,which are not inductively heated anymore.Consequently they touch the induction coil because of the downward movement,which breaks the process mostly by spilling out the melt.Anyhow,this was the first hint,that gas cooling has an influence.Firstly in helium-gas,the diameter of the crystal could be increased until 26mm without screws.The 10times higher heat conductivity compared to argon increases the cooling and stabi-lizes the growth.Unfortunately the spikes also arose (Fig.8,left),after melting the cone of the feed rod.So only a few millimeters could be grown with this diameter.The cooling effect could be also verified by observing a melt drop under different atmospheres.In the same experiment the atmosphere of the gas was exchanged andfor the same position and heater power the melt drop is bigger in argon,because the heat loss is reduced and so,more material could be molten (Fig.9).To get longer crystals we tried different methods to get rid of the spikes,which work successfully for silicon.But neither increasing the frequency of the generator from 2.6to 3.6MHz nor an additional radiation heating with a round tube emitter nor a mixture of argon and helium solved the problem.The breakthrough was achieved with the idea of separate gases around the feed rod,mainly argon,and the crystal,mainly helium for increased cooling.By this means it was concurrently possible to smoothly melt the source material and suppress the screw of the growing crystal.First-time,a stable and stationary germanium FZ process with a diameter of 35mm could be realized.Crystal diameter and length were limited by the feed rod diameter of 30mm and a length of several centimeters.Sadly,a single crystal-crystalline growth was only possible until a diameter of 20mm (see Fig.10).It should be possible,as for silicon,to use the Dash method and grow a dislocation-free crystal after pulling a thin neck.4.ConclusionThe results for the growth of germanium crystals are promising for the use of crucible-free methods,despite of germanium’s disadvantageous material properties for this process type.The FZ germanium process was only possible under quite different growth conditions.Only the simultaneous use of helium around the crystal and argon around the feed rod pointed out to be a solution for the instable growth and melting behavior.For the future the used setup will be scaled up to increase the crystal diameter.Simultaneously it will be investigated,if the Dash method will allow to get a single crystal similar to the silicon FZ process.The pedestal method was more easily adaptable to the new material by slightly changing the induction coil.The numerical simulation gives some understanding of the process,which helps to optimize the process control.The experimental results were in good agreement with them as well.An option for a further increase in diameter would be to use helium for the crystal cooling as in the FZ case.References[1]A.L ¨udge,H.Riemann,M.W ¨unscher,G.Behr,W.L ¨oser,A.Muiznieks,Crystal Growth Processes Based on Capillarity:Czochralski,Floating Zone,Shaping and Crucible Techniques,Wiley-Blackwell,2010,p.203(Chapter4).Fig.8.The melting interface of a 30mm germanium feed rod under argon-gas (right)and under helium-gas (left)withspikes.Induction CoilFig.9.Melt drop hanging from the feed rod in helium-gas (a)and argon-gas (b)under elsewise sameconditions.Fig.10.Germanium crystal of 35mm in maximal diameter (down)with an axial-longitudinal cut after structural etching.After 20mm the material is not single crystalline anymore.M.R.W¨u nscher et al./Journal of Crystal Growth 318(2011)1039–10421042。