RU30P5H

td(OFF) Turn-off Delay Time tf Turn-off Fall Time
④
Gate Charge Characteristics
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
ISD=-2A, VGS=0V
W °C/W
Copyright© Ruichips Semiconductor Co., Ltd Rev. A– MAY., 2011

RU30P5H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. A– MAY., 2011
Tj - Junction Temperature (°C) Thermal Transient Impedance
Normalized Effective Transient
-ID - Drain Current (A)
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Copyright© Ruichips Semiconductor Co., Ltd
8
Rev. A– MAY., 2011

Customer Service
Worldwide Sales and Service: Sales@
Technical Support: Technical@
DS(ON) R - On - Resistance (m)
-VGS - Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
4
Rev. A– MAY., 2011
Tj - Junction Temperature (°C)
Qrr Reverse Recovery Charge
④
Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time
-ID - Drain Current (A)
-VDS - Drain-Source Voltage (V) Drain-Source On Resistance
-ID - Drain Current (A) Gate Threshold Voltage
Normalized Threshold Voltage
Maximum Power Dissipation
TA=25°C TA=70°C
Thermal Resistance-Junction to Ambient
Rating
-30 ±20 150 -55 to 150 -3.1
①
-22 -5.5 -4.5 2.5 1.6 50
Unit
V °C °C A
A A
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-1
V
12
ns
7
nC
1.1
Ω
550
90
pF
50
8
10 ns
28
10
11 14
2
nC
3
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t ≤10sec. The value in any given application depends on the user's specific board design.
SYMBOL
E E1 e L θ
MM
MIN MAX
3.800 4.000
5.800 6.200
1.270 (BSC)
0.400 1.270
0°
8°
INCH
MIN MAX
0.150 0.157
0.228 0.244
0.050 (BSC)
0.016 0.050
0°
8°
ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
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Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
Packaging T : TUBE TR : Tape & Reel
RU30P5H
Copyright© Ruichips Semiconductor Co., Ltd
7
Rev. A– MAY., 2011

Package Information
SOP-8
RU30P5H

Typical Characteristics
Drain-Source On Resistance
RU30P5H
Source-Drain Diode Forward
-IS - Source Current (A)
Normalized On Resistance
Tj - Junction Temperature (°C) Capacitance
3
Rev. A– MAY., 2011
Square Wave Pulse Duration (sec)

Typical Characteristics
Output Characteristics
RU30P5H
Drain-Source On Resistance
RDS(ON) - On Resistance (mΩ)
ISD=-5.5A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-15V, Frequency=1.0MHz
VDD=-15V, RL=2.7Ω, IDS=-5.5A, VGEN=-10V, RG=6Ω
VDS=-24V, VGS= 10V, IDS=-5.5A
VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current
VGS=0V, IDS=-250µA
-30
VDS=-30V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
-1
VGS=±20V, VDS=0V
③
RDS(ON)
Drain-Source On-state Resistance
SYMBOL
A A1 A2 b c D
MM
MIN
MAX
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
INCH MIN MAX 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200
IS
Diode Continuous Forward Current
TA=25°C
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
TA=25°C
ID
PD
②
RθJA
Continuous Drain Current
TA=25°C TA=70°C
RU30P5H
N-Channel Advanced Power MOSFET
MOSFET
Features
• -30V/-5.5A, RDS (ON) =38mΩ (Typ.) @ VGS=-10V RDS (ON) =55mΩ (Typ.) @ VGS=-4.5V
• Super High Dense Cell Design
5
Rev. A– MAY.,ห้องสมุดไป่ตู้2011