CY7C1527V18-300BZI资料

72-Mbit DDR-II SRAM 2-Word
Burst Architecture
CY7C1516V18CY7C1527V18CY7C1518V18CY7C1520V18
Features
•72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36)•300-MHz clock for high bandwidth
•2-Word burst for reducing address bus frequency •Double Data Rate (DDR) interfaces
(data transferred at 600 MHz) @ 300 MHz
•Two input clocks (K and K) for precise DDR timing —SRAM uses rising edges only
•Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches
•Echo clocks (CQ and CQ) simplify data capture in high-speed systems
•Synchronous internally self-timed writes
•1.8V core power supply with HSTL inputs and outputs •Variable drive HSTL output buffers •Expanded HSTL output voltage (1.4V–V DD )
•Available in 165-ball FBGA package (15 x 17 x 1.4 mm)•Offered in both lead-free and non lead-free packages •JTAG 1149.1 compatible test access port
•Delay Lock Loop (DLL) for accurate data placement
Configurations
CY7C1516V18 – 8M x 8CY7C1527V18 – 8M x 9CY7C1518V18 – 4M x 18CY7C1520V18 – 2M x 36
Functional Description
The CY7C1516V18, CY7C1527V18, CY7C1518V18, and CY7C1520V18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock.Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1516V18 and two 9-bit words in the case of CY7C1527V18 that burst sequentially into or out of the device.The burst counter always starts with a “0” internally in the case of CY7C1516V18 and CY7C1527V18. On CY7C1518V18 and CY7C1520V18, the burst counter takes in the least significant bit of the external address and bursts two 18-bit words in the case of CY7C1518V18 and two 36-bit words in the case of CY7C1520V18 sequentially into or out of the device.Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, sharing the same physical pins as the data inputs D) are tightly matched to the two output echo clocks CQ/CQ, eliminating the need for separately capturing data from each individual DDR SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility.
All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.
Selection Guide
300 MHz
278 MHz 250 MHz 200 MHz 167 MHz Unit Maximum Operating Frequency 300278250200167MHz Maximum Operating Current (x36)
900
860
800
700
650
mA
CY7C1518V18CY7C1520V18
Logic Block Diagram (CY7C1516V18)
CLK A (21: 0)
Gen.
K K Control Logic
Address Register
R e a d A d d . D e c o d e
Read Data Reg.
R/W DQ [7:0]
Output Logic Reg.
Reg.
Reg.
8
8
16
8
NWS [1 : 0]
V REF W r i t e A d d . D e c o d e
8
C
C 8
LD
Control
224M x 8 Array
4M x 8 Array
Write Reg Write Reg CQ
CQ R/W DOFF
Logic Block Diagram (CY7C1527V18)
CLK A (21:0)
Gen.
K K Control Logic
Address Register
R e a d A d d . D e c o d e
Read Data Reg.
R/W DQ [8: 0]
Output Logic Reg.
Reg.
Reg.
9
9
18
9
BWS [0]
V REF W r i t e A d d . D e c o d e
9
C
C 9
LD
Control
224M x 9 Array
4M x 9 Array
Write Reg Write Reg CQ
CQ R/W DOFF
CY7C1518V18CY7C1520V18
4M x 18 Array
Write Reg
Write Reg Logic Block Diagram (CY7C1518V18)
CLK A (21: 0)
Gen.
K K Control Logic
Address
Register
R e a d A d d . D e c o d e
Read Data Reg.
R/W DQ [17: 0]
Output Logic Reg.
Reg.
Reg.
18
18
36
18
BWS [1: 0]
V REF W r i t e A d d . D e c o d e
18
22
C
C 18
LD Control
Burst Logic A0A (21:1)21
CQ CQ
R/W DOFF
Logic Block Diagram (CY7C1520V18)
CLK A (20:0)
Gen.
K K Control Logic
Address
Register
R e a d A d d . D e c o d e
Read Data Reg.
R/W DQ [35: 0]
Output Logic Reg.
Reg.
Reg.
36
36
72
36
BWS [3:0]
V REF W r i t e A d d . D e c o d e
36
21
C
C 36
LD Control
Burst Logic
A0A (20:1)20
2M x 36 Array
Write Reg
Write Reg CQ
CQ
36
R/W DOFF
CY7C1518V18CY7C1520V18
Pin Configurations [1]
Note:
1.V SS /144M and V SS /288M are not connected to the die and can be tied to any voltage level.
CY7C1516V18 (8M x 8)
2
3
456
7
1
A B C D E F G H J K L M N P R
A CQ NC NC NC NC DOFF NC A A NWS 1 K R/W NC NC NC NC NC NC TDO
NC NC NC NC NC NC TCK
NC NC A NC K NWS 0V SS A A A NC V SS V SS V SS V SS V DD A V SS V SS V SS V DD DQ4NC V DDQ NC NC NC NC DQ7A
V DDQ V SS V DDQ V DD V DD DQ5V DDQ V DD V DDQ V DD V DDQ V DD V SS V DD V DDQ V DDQ V SS V SS V SS V SS A A
C
V SS A A A
NC V SS NC V SS NC NC V REF V SS V DD V SS V SS A V SS C NC DQ6NC NC NC V DD A
8910
11
NC A A LD
CQ A NC NC DQ3V SS NC NC NC NC V SS NC DQ2NC NC NC V REF NC NC V DDQ NC V DDQ NC NC V DDQ V DDQ V DDQ NC V DDQ NC DQ1NC V DDQ V DDQ NC V SS NC NC NC TDI
TMS
V SS A NC A
NC NC NC ZQ NC DQ0NC NC NC NC A
CY7C1527V18 (8M x 9)
2
3
456
7
1
A B C D E F G H J K L M N P R
A CQ NC NC NC NC DOFF NC A A NC K R/W
NC NC NC NC NC NC TDO
NC NC NC NC NC NC TCK
NC NC A NC K BWS 0V SS A A A NC V SS V SS V SS V SS V DD A V SS V SS V SS V DD DQ4NC V DDQ NC NC NC NC DQ7A
V DDQ V SS V DDQ V DD V DD DQ5V DDQ V DD V DDQ V DD V DDQ V DD V SS V DD V DDQ V DDQ V SS V SS V SS V SS A A
C
V SS A A A
NC V SS NC V SS NC NC V REF V SS V DD V SS V SS A V SS C NC DQ6NC NC NC V DD A
8910
11
DQ8A A LD
CQ A NC NC DQ3V SS NC NC NC NC V SS NC DQ2NC NC NC V REF NC NC V DDQ NC V DDQ NC NC V DDQ V DDQ V DDQ NC V DDQ NC DQ1NC V DDQ V DDQ NC V SS NC NC NC TDI
TMS
V SS A NC A
NC NC NC ZQ NC DQ0NC NC NC NC A
165-ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1518V18
CY7C1520V18 Pin Configurations [1] (continued)
CY7C1518V18 (4M x 18)
234567
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P R
A
CQ
NC
NC
NC
NC
DOFF
NC
A A BWS
1
K
R/W NC
DQ9NC
NC
NC
NC
TDO
NC
NC
NC
NC
NC
NC
TCK
NC
NC
A NC K BWS
V SS A A0A
DQ10V SS
V SS V SS
V SS
V DD
A
V SS
V SS
V SS
V DD
DQ11
NC
V DDQ
NC
DQ14
NC
DQ16
DQ17
A
V DDQ V SS
V DDQ V DD V DD
DQ13V DDQ
V DD
V DDQ
V DD
V DDQ V DD V SS
V DD
V DDQ
V DDQ V SS
V SS V SS V SS
A
A
C
V SS
A A
A
NC V SS
NC V SS
DQ12
NC
V REF
V SS
V DD
V SS
V SS
A
V SS
C
NC
DQ15
NC
NC
NC
V DD
A
891011
DQ0
A A
LD CQ
A NC NC DQ8
V SS NC DQ7NC
NC
V SS NC
DQ6
NC
NC
NC
V REF
NC
DQ3
V DDQ NC
V DDQ NC DQ5
V DDQ
V DDQ
V DDQ
NC
V DDQ NC DQ4
NC
V DDQ
V DDQ NC
V SS NC NC
NC
TDI
TMS
V SS
A NC
A
NC
NC
NC
ZQ
NC
DQ2
NC
DQ1
NC
NC
A
234567
1
A B C D E F G H J K L M N
P R
A
CQ
NC
NC
NC
NC
DOFF
NC
V SS/144M A BWS
2
K
R/W BWS1
DQ27DQ18
NC
NC
NC
TDO
NC
NC
DQ31
NC
NC
NC
TCK
NC
DQ28
A BWS
3
K BWS
V SS A A0A
DQ19V SS
V SS V SS
V SS
V DD
A
V SS
V SS
V SS
V DD
DQ20
DQ21
V DDQ
DQ32
DQ23
DQ34
DQ25
DQ26
A
V DDQ V SS
V DDQ V DD V DD
DQ22V DDQ
V DD
V DDQ
V DD
V DDQ V DD V SS
V DD
V DDQ
V DDQ V SS
V SS V SS V SS
A
A
C
V SS
A A
A
DQ29V SS
NC V SS
DQ30
NC
V REF
V SS
V DD
V SS
V SS
A
V SS
C
NC
DQ33
NC
DQ35
DQ24
V DD
A
891011
DQ0
A A
LD CQ
A NC NC DQ8
V SS NC DQ17DQ7
NC
V SS NC
DQ6
DQ14
NC
NC
V REF
NC
DQ3
V DDQ NC
V DDQ NC DQ5
V DDQ
V DDQ
V DDQ
DQ4
V DDQ NC DQ13
NC
V DDQ
V DDQ NC
V SS NC DQ1
NC
TDI
TMS
V SS
A NC
A
DQ16
DQ15
NC
ZQ
DQ12
DQ2
DQ10
DQ11
DQ9
NC
A
CY7C1520V18 (2M x 36)
165-ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1518V18
CY7C1520V18 Pin Definitions
Pin Name I/O Pin Description
DQ[x:0]Input/Output-
Synchronous Data Input/Output signals. Inputs are sampled on the rising edge of K and K clocks during valid Write operations. These pins drive out the requested data during a Read operation. Valid data is driven out on the rising edge of both the C and C clocks during Read operations or K and K when in single clock mode. When read access is deselected, Q[x:0] are automatically tri-stated.
CY7C1516V18 − DQ[7:0]
CY7C1527V18 − DQ[8:0]
CY7C1518V18 − DQ[17:0]
CY7C1520V18 − DQ[35:0]
LD Input-
Synchronous Synchronous Load. This input is brought LOW when a bus cycle sequence is to be defined. This definition includes address and Read/Write direction. All transactions operate on a burst of 2data.
NWS0, NWS1Input-
Synchronous Nibble Write Select 0, 1 − active LOW(CY7C1516V18 only).Sampled on the rising edge of the K and K clocks during Write operations. Used to select which nibble is written into the device during the current portion of the Write operations. Nibbles not written remain unaltered.
NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select will cause the corresponding nibble of data to be ignored and not written into the device.
BWS0, BWS1, BWS2, BWS3
Input-
Synchronous
Byte Write Select 0, 1, 2, and 3 − active LOW. Sampled on the rising edge of the K and K clocks
during Write operations. Used to select which byte is written into the device during the current
portion of the Write operations. Bytes not written remain unaltered.
CY7C1527V18 − BWS0 controls D[8:0]
CY7C1518V18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1520V18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write
Select will cause the corresponding byte of data to be ignored and not written into the device.
A, A0Input-
Synchronous Address Inputs. These address inputs are multiplexed for both Read and Write operations. Internally, the device is organized as 8M x 8 (2 arrays each of 4M x 8) for CY7C1516V18 and 8M x 9 (2 arrays each of 4M x9) for CY7C1527V18, a single 4M x 18 array for CY7C1518V18, and a single array of 2M x 36 for CY7C1520V18.
CY7C1516V18 – Since the least significant bit of the address internally is a “0,” only 22 external address inputs are needed to access the entire memory array.
CY7C1527V18 – Since the least significant bit of the address internally is a “0,” only 22 external address inputs are needed to access the entire memory array.
CY7C1518V18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally. 22 address inputs are needed to access the entire memory array.
CY7C1520V18 – A0 is the input to the burst counter. These are incremented in a linear fashion internally. 21 address inputs are needed to access the entire memory array. All the address inputs are ignored when the appropriate port is deselected.
R/W Input-
Synchronous Synchronous Read/Write Input. When LD is LOW, this input designates the access type (Read when R/W is HIGH, Write when R/W is LOW) for loaded address. R/W must meet the set-up and hold times around edge of K.
C Input-
Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details.
C Input-
Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the Read data from the device. C and C can be used together to deskew the flight times of various devices on the board back to the controller. See application example for further details.
K Input-
Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K.
K Input-
Clock Negative Input Clock Input. K is used to capture synchronous data being presented to the device and to drive out data through Q[x:0] when in single clock mode.
CY7C1518V18CY7C1520V18
CQ
Output-Clock CQ is referenced with respect to C . This is a free running clock and is synchronized to the Input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table.
CQ
Output-Clock CQ is referenced with respect to C . This is a free running clock and is synchronized to the Input clock for output data (C) of the DDR-II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table.
ZQ
Input
Output Impedance Matching Input . This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q [x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternately, this pin can be connected directly to V DDQ , which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF Input DLL Turn Off - active LOW . Connecting this pin to ground will turn off the DLL inside the device. The timings in the DLL turned off operation will be different from those listed in this data sheet. TDO Output TDO for JTAG .TCK Input TCK pin for JTAG .TDI Input TDI pin for JTAG .TMS Input TMS pin for JTAG .
NC N/A Not connected to the die . Can be tied to any voltage level.V SS /144M Input Address expansion for 144M . Can be tied to any voltage level.V SS /288M Input Address expansion for 288M . Can be tied to any voltage level.
V REF Input-Reference Reference Voltage Input . Static input used to set the reference level for HSTL inputs and Outputs as well as AC measurement points.V DD Power Supply Power supply inputs to the core of the device . V SS Ground
Ground for the device .
V DDQ
Power Supply Power supply inputs for the outputs of the device .
Pin Definitions (continued)
Pin Name I/O Pin Description
CY7C1518V18 CY7C1520V18
Functional Overview
The CY7C1516V18, CY7C1527V18, CY7C1518V18, and CY7C1520V18 are synchronous pipelined Burst SRAMs equipped with a DDR interface.
Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C or K/K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C or K/K when in single-clock mode).
All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K).
CY7C1518V18 is described in the following sections. The same basic descriptions apply to CY7C1516V18, CY7C1527V18, and CY7C1520V18.
Read Operations
The CY7C1518V18 is organized internally as a single array of 4M x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to Address inputs is stored in the Read address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. Following the next K clock rise the corresponding 18-bit word of data from this address location is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C the next 18-bit data word from the address location generated by the burst counter is driven onto the Q[17:0]. The requested data will be valid 0.45 ns from the rising edge of the output clock (C or C, or K and K when in single clock mode, 200-MHz, 250-MHz and 300-MHz device). In order to maintain the internal logic, each read access must be allowed to complete. Read accesses can be initiated on every rising edge of the positive input clock (K).
When read access is deselected, the CY7C1518V18 will first complete the pending read transactions. Synchronous internal circuitry will automatically tri-state the outputs following the next rising edge of the positive output clock (C). This will allow for a seamless transition between devices without the insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to Address inputs is stored in the Write address register and the least significant bit of the address is presented to the burst counter. The burst counter increments the address in a linear fashion. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit Write Data register provided BWS[1:0] are both asserted active. On the subsequent rising edge of the Negative Input Clock (K) the information presented to D[17:0] is also stored into the Write Data register provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses can be initiated on every rising edge of the positive input clock (K). Doing so will pipeline the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K).
When write access is deselected, the device will ignore all inputs after the pending Write operations have been completed.
Byte Write Operations
Byte Write operations are supported by the CY7C1518V18. A Write operation is initiated as described in the Write Operation section above. The bytes that are written are determined by BWS0 and BWS1 which are sampled with each set of 18-bit data word. Asserting the appropriate Byte Write Select input during the data portion of a Write will allow the data being presented to be latched and written into the device. Deasserting the Byte Write Select input during the data portion of a write will allow the data stored in the device for that byte to remain unaltered. This feature can be used to simplify Read/Modify/Write operations to a Byte Write operation. Single Clock Mode
The CY7C1518V18 can be used with a single clock that controls both the input and output registers. In this mode the device will recognize only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power-on. This function is a strap option and not alterable during device operation. DDR Operation
The CY7C1518V18 enables high-performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. The CY7C1518V18 requires a single No Operation (NOP) cycle when transitioning from a Read to a Write cycle. At higher frequencies, some applications may require a second NOP cycle to avoid contention.
If a Read occurs after a Write cycle, address and data for the Write are stored in registers. The write information must be stored because the SRAM cannot perform the last word Write to the array without conflicting with the Read. The data stays in this register until the next Write cycle occurs. On the first Write cycle after the Read(s), the stored data from the earlier Write will be written into the SRAM array. This is called a Posted Write.
If a Read is performed on the same address on which a Write is performed in the previous cycle, the SRAM reads out the most current data. The SRAM does this by bypassing the memory array and reading the data from the registers. Depth Expansion
Depth expansion requires replicating the LD control signal for each bank. All other control signals can be common between banks as appropriate.
CY7C1518V18CY7C1520V18
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin on the SRAM and V SS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5x the value of the intended line impedance driven by the SRAM, The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with V DDQ =1.5V. The output impedance is adjusted every 1024cycles upon power-up to account for drifts in supply voltage and temperature.Echo Clocks
Echo clocks are provided on the DDR-II to simplify data capture on high-speed systems. Two echo clocks are generated by the DDR-II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free-running clocks and are synchronized to the output clock of the DDR-II. In the single clock mode, CQ is generated with
respect to K and CQ is generated with respect to K. The timings for the echo clocks are shown in the AC Timing table.DLL
These chips utilize a Delay Lock Loop (DLL) that is designed to function between 80 MHz and the specified maximum clock frequency. During power-up, when the DOFF is tied HIGH, the DLL gets locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clock K and K for a minimum of 30 ns. However, it is not necessary for the DLL to be specifically reset in order to lock the DLL to the desired frequency. The DLL will automatically lock 1024 clock cycles after a stable clock is presented.the DLL may be disabled by applying ground to the DOFF pin. For information refer to the application note “DLL Considerations in QDRII™/DDRII/QDRII+/DDRII+”.
Notes:
2.The above application shows two DDR-II used.
3.X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
4.Device will power-up deselected and the outputs in a tri-state condition.
5.On CY7C1518V18 and CY7C1520V18, “A1” represents address location latched by the devices when transaction was initiated and A2 represents the addresses sequence in the burst. On CY7C1516V18, “A1” represents A +‘0’ and A2 represents A +‘1.’
6.“t” represents the cycle at which a Read/Write operation is started. t+1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.
7.Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
8.charging symmetrically.
Application Example [2]
Truth Table [3, 4, 5, 6, 7, 8]
Operation
K LD R/W DQ
DQ
Write Cycle:
Load address; wait one cycle; input write data on consecutive K and K rising edges.
L-H
L
L
D(A1) at K(t + 1) ↑
D(A2) at K(t + 1) ↑
Read Cycle:
Load address; wait one and a half cycle; read data on consecutive C and C rising edges.L-H L H Q(A1) at C(t + 1) ↑Q(A2) at C(t + 2) ↑
NOP: No Operation L-H H X High-Z High-Z Standby: Clock Stopped
Stopped
X
X
Previous State
Previous State
Burst Address Table (CY7C1518V18, CY7C1520V18)
First Address (External)
Second Address (Internal)
X..X0X..X1X..X1
X..X0
CY7C1518V18
CY7C1520V18 Write Cycle Descriptions(CY7C1516V18 and CY7C1518V18)[3, 9]
BWS0, NWS0BWS1, NWS1K K Comments
L L L-H–During the Data portion of a Write sequence :
CY7C1516V18 − both nibbles (D[7:0]) are written into the device,
CY7C1518V18 − both bytes (D[17:0]) are written into the device.
L L–L-H During the Data portion of a Write sequence :
CY7C1516V18 − both nibbles (D[7:0]) are written into the device,
CY7C1518V18 − both bytes (D[17:0]) are written into the device.
L H L-H–During the Data portion of a Write sequence :
CY7C1516V18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1518V18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
L H–L-H During the Data portion of a Write sequence :
CY7C1516V18 − only the lower nibble (D[3:0]) is written into the device. D[7:4]
will remain unaltered,
CY7C1518V18 − only the lower byte (D[8:0]) is written into the device. D[17:9]
will remain unaltered.
H L L-H–During the Data portion of a Write sequence :
CY7C1516V18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1518V18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
H L–L-H During the Data portion of a Write sequence :
CY7C1516V18 − only the upper nibble (D[7:4]) is written into the device. D[3:0]
will remain unaltered,
CY7C1518V18 − only the upper byte (D[17:9]) is written into the device. D[8:0]
will remain unaltered.
H H L-H–No data is written into the devices during this portion of a Write operation.
H H–L-H No data is written into the devices during this portion of a Write operation.
CY7C1518V18
CY7C1520V18 Write Cycle Descriptions[3, 9] (CY7C1520V18)
BWS0BWS1BWS2BWS3K K Comments
L L L L L-H–During the Data portion of a Write sequence, all four bytes (D[35:0]) are
written into the device.
L L L L–L-H During the Data portion of a Write sequence, all four bytes (D[35:0]) are
written into the device.
L H H H L-H–During the Data portion of a Write sequence, only the lower byte (D[8:0]) is
written into the device. D[35:9] will remain unaltered.
L H H H–L-H During the Data portion of a Write sequence, only the lower byte (D[8:0]) is
written into the device. D[35:9] will remain unaltered.
H L H H L-H–During the Data portion of a Write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18]will remain unaltered.
H L H H–L-H During the Data portion of a Write sequence, only the byte (D[17:9]) is
written into the device. D[8:0] and D[35:18]will remain unaltered.
H H L H L-H–During the Data portion of a Write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27]will remain unaltered.
H H L H–L-H During the Data portion of a Write sequence, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27]will remain unaltered.
H H H L L-H During the Data portion of a Write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] will remain unaltered.
H H H L–L-H During the Data portion of a Write sequence, only the byte (D[35:27]) is
written into the device. D[26:0] will remain unaltered.
H H H H L-H–No data is written into the device during this portion of a Write operation.
H H H H–L-H No data is written into the device during this portion of a Write operation. Write Cycle Descriptions[3, 9](CY7C1527V18)
BWS0K K Comments
L L-H–During the Data portion of a Write sequence, the single byte (D[8:0]) is
written into the device.
L–L-H During the Data portion of a Write sequence, the single byte (D[8:0]) is
written into the device.
H L-H–No data is written into the device during this portion of a Write operation.
H–L-H No data is written into the device during this portion of a Write operation. Note:
9.Assumes a Write cycle was initiated per the Write Port Cycle Description Truth Table. NWS0, NWS1,BWS0, BWS1,BWS2 and BWS3 can be altered on different
portions of a write cycle, as long as the set-up and hold requirements are achieved.。