HT7033A中文资料

HT70XXVoltage DetectorSelection TablePart No.Detectable VoltageHysteresis WidthTolerance HT7022A 2.2V 0.11V ±5%HT7024A 2.4V 0.12V ±5%HT7027A 2.7V 0.135V ±5%HT7033A 3.3V 0.165V ±5%HT7039A 3.9V 0.195V ±5%HT7044A 4.4V 0.22V ±5%HT7050A 5.0V 0.25V ±5%HT7070A 7.0V0.35V±5%Note:The output type selection codes are:NMOS open drain normal open,active lowFor example:The HT7070A is a 7.0V,NMOS open drain active low outputOutput type selection tableV DDV DD >V DET (+)V DD £V DET (-)TypeV OUT AHi-ZVSSRev.1.601January 14,2003General DescriptionThe HT70XX series is a set of three-terminal low power voltage detectors implemented in CMOS technology.Each voltage detector in the series detects a particular fixed voltage ranging from 2.2V to 7V.The voltage de-tectors consist of a high-precision and low power con-sumption standard voltage source,a comparator,hysteresis circuit,and an output driver.CMOS technol-ogy ensures low power consumption.Although designed primarily as fixed voltage detectors,these devices can be used with external components to detect user specified threshold voltages (NMOS open drain type only).Features·Low power consumption ·Low temperature coefficient·Built-in high-stability reference source·Built-in hysteresis characteristic ·TO-92&SOT-89packageApplications·Battery checkers ·Level selectors ·Power failure detectors·Microcomputer reset ·Battery memory backup·Non-volatile RAM signal storage protectorsBlock DiagramN channel open drain output(normal open;active low)A typePin AssignmentRev.1.602January14,2003Pad AssignmentHT70XX (except HT7022A)Chip size:1317´1158(m m)2*The IC substrate should be connected to VDD in the PCB layout artwork.HT7022A onlyChip size:2032´1321(m m)2*The IC substrate should be connected to VDD in the PCB layout artwork.Absolute Maximum RatingsSupply Voltage,except HT7022A..................................................................................................V SS -0.3V to V SS +26V Supply Voltage,HT7022A only....................................................................................................................-0.3V to13V Output Voltage...........................V SS -0.3V to V DD +0.3V Output Current......................................................50mA Storage Temperature............................-50°C to 125°C Power Consumption..........................................200mWOperating Temperature 0°C to 70°CNote:These are stress ratings only.Stresses exceeding the range specified under ²Absolute Maximum Ratings ²maycause substantial damage to the device.Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-ity.Rev.1.603January 14,2003Pad CoordinatesHT70XX (except HT7022A)Unit:m m Pad No.X Y 1-483.30-379.502-234.60-399.503443.90-386.00HT7022A onlyUnit:m mPad No.X Y1-434.34394.972120.65461.013774.70412.75Electrical CharacteristicsHT7022A Ta=25°CHT7024A Ta=25°CHT7027A Ta=25°CRev.1.604January14,2003HT7039A Ta=25°CHT7044A Ta=25°CRev.1.605January14,2003HT7070A Ta=25°CRev.1.606January 14,2003Functional DescriptionThe HT70XX series is a set of voltage detectors equipped with a high stability voltage reference which is connected to the negative input of a comparator ¾de-noted as V REF in the following figure for NMOS output voltage detector.When the voltage drop to the positive input of the com-parator (i,e,V B )is higher than V REF ,VOUT goes high,M1turns off,and V B is expressed as V BH =V DD ´(R B +R C )/(R A +R B +R C ).If V DD is decreased so that V B falls to a value less than V REF ,the comparator output in-verts from high to low,V OUT goes low,V C is high,M1turns on,RC is bypassed,and V B becomes:V BL =V DD ´R B /(R A +R B ),which is less than V BH.By so doing,the comparator output will stay low to prevent the circuit from oscillating when V B »V REF.If V DD falls below the minimum operating voltage,the output becomes undefined.When VDD goes from low to V DD ´R B /(R A +R B )>V REF ,the comparator output and V OUT goes high.The detectable voltage is defined as:V DET (-)=R R R R R A B CB C +++´V REFThe release voltage is defined as:V DET (+)=R R R A BB+´V REFThe hysteresis width is:V HYS=V DET(+)-V DET(-)The figure demonstrates the NMOS output type withpositive output polarity(V OUT is normally open,activelow).The HT70XX series also supplies options for otheroutput types with active high outputs.Application cir-cuits shown are examples of positive output polarity(normally open,active low)unless otherwise specified.NMOS output voltage detector(HT70XXA) Application CircuitsMicrocomputer reset circuitNormally a reset circuit is required to protect the micro-computer system from malfunctions due to power line interruptions.The following examples show how differ-ent output configurations perform a reset function in var-ious systems.·NMOS open drain output application for separate power supply·NMOS open drain output application with R-C delayPower-on reset circuitWith several external components,the NMOS open drain type of the HT70XX series can be used to perform a power-on reset function as shown:Rev.1.607January14,20035V power line monitoring circuitGenerally,a minimum operating voltage of4.5V is guar-anteed in a5V power line system.The HT7044A is rec-ommended for use as5V power line monitoring circuit.·5V power line monitor with power-on reset·with5V voltage regulatorChange of detectable voltageIf the required voltage is not found in the standard prod-uct selection table,it is possible to change it by using ex-ternal resistance dividers or diodes.·Varying the detectable voltage with a resistance di-viderDetectable voltage=R RRA BB+´V DETHysteresis width=R RRA BB+´V HYS·Varying the detectable voltage with a diodeDetectable Voltage=V f1+V f2+V DETMalfunction analysisThe following circuit demonstrates the way a circuit ana-lyzes malfunctions by monitoring the variation or spikenoise of power supply voltage.Charge monitoring circuitThe following circuit shows a charged monitor for pro-tection against battery deterioration by overcharging.When the voltage of the battery is higher than the set de-tectable voltage,the transistor turns on to bypass thecharge current,protecting the battery from overcharg-ing.Rev.1.608January14,2003Level selectorThe following diagram illustrates a logic level selector.Rev.1.609January14,2003Package Information3-pin TO-92outline dimensionsSymbolDimensions in milMin.Nom.Max.A170¾200B170¾200C500¾¾D11¾20E90¾110F45¾55G45¾65H130¾160I8¾18a4°¾6°Rev.1.6010January14,20033-pin SOT-89outline dimensionsSymbolDimensions in milMin.Nom.Max.A173¾181B64¾72C90¾102D35¾47E155¾167F14¾19G17¾22H¾59¾I55¾63J14¾17Rev.1.6011January14,2003Product Tape and Reel SpecificationsTO-92reel dimensions(Unit:mm)Rev.1.6012January14,2003SOT-89reel dimensionsSOT-89Symbol Description Dimensions in mmA Reel Outer Diameter180±1.0B Reel Inner Diameter62±1.5C Spindle Hole Diameter12.75+0.15D Key Slit Width 1.9±0.15T1Space Between Flange12.4+0.2T2Reel Thickness17-0.4Rev.1.6013January14,2003TO-92Symbol Description Dimensions in mm I1Taped Lead Length(2.5)P Component Pitch12.7±1.0P0Perforation Pitch12.7±0.3P2Component to Perforation(Length Direction) 6.35±0.4F1Lead Spread 2.5+0.4-0.1F2Lead Spread 2.5+0.4-0.1D h Component Alignment0±0.1W Carrier Tape Width 18.0+1.0-0.5W0Hold-down Tape Width 6.0±0.5W1Perforation Position9.0±0.5W2Hold-down Tape Position(0.5)H0Lead Clinch Height16.0±0.5H1Component Height Less than24.7D0Perforation Diameter 4.0±0.2t Taped Lead Thickness0.7±0.2H Component Base Height19.0±0.5Note:Thickness less than0.38±0.05mm~0.5mmP0Accumulated pitch tolerance:±1mm/20pitches.()Bracketed figures are for consultation onlyRev.1.6014January14,2003SOT-89Symbol Description Dimensions in mmW Carrier Tape Width 12.0+0.3-0.1P Cavity Pitch8.0±0.1E Perforation Position 1.75±0.1F Cavity to Perforation(Width Direction) 5.5±0.05D Perforation Diameter 1.5+0.1D1Cavity Hole Diameter 1.5+0.1P0Perforation Pitch 4.0±0.1P1Cavity to Perforation(Length Direction) 2.0±0.10A0Cavity Length 4.8±0.1B0Cavity Width 4.5±0.1K0Cavity Depth 1.8±0.1t Carrier Tape Thickness0.30±0.013C Cover Tape Width9.3Rev.1.6015January14,2003Holtek Semiconductor Inc.(Headquarters)No.3,Creation Rd.II,Science-based Industrial Park,Hsinchu,TaiwanTel:886-3-563-1999Fax:886-3-563-1189Holtek Semiconductor Inc.(Sales Office)11F,No.576,Sec.7Chung Hsiao E.Rd.,Taipei,TaiwanTel:886-2-2782-9635Fax:886-2-2782-9636Fax:886-2-2782-7128(International sales hotline)Holtek Semiconductor(Shanghai)Inc.7th Floor,Building2,No.889,Yi Shan Rd.,Shanghai,ChinaTel:021-6485-5560Fax:021-6485-0313Holtek Semiconductor(Hong Kong)Ltd.RM.711,Tower2,Cheung Sha Wan Plaza,833Cheung Sha Wan Rd.,Kowloon,Hong KongTel:852-2-745-8288Fax:852-2-742-8657Holmate Semiconductor,Inc.48531Warm Springs Boulevard,Suite413,Fremont,CA94539Tel:510-252-9880Fax:510-252-9885CopyrightÓ2003by HOLTEK SEMICONDUCTOR INC.The information appearing in this Data Sheet is believed to be accurate at the time of publication.However,Holtek as-sumes no responsibility arising from the use of the specifications described.The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification,nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise.Holtek reserves the right to alter its products without prior notification.For the most up-to-date information,please visit our web site at .Rev.1.6016January14,2003。