SPD02N50C3中文资料

Cool MOS™ Power TransistorV DS @ T jmax 560V R DS(on)3ΩI D1.8AFeature• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v /d t rated• Ultra low effective capacitances • Improved transconductanceTypePackage Ordering Code SPD02N50C3P-TO252-3-1Q67040-S4570Marking 02N50C3Maximum Ratings ParameterSymbol ValueUnitContinuous drain current T C = 25 °C T C = 100 °CI D1.81.1APulsed drain current, t p limited by T jmax I D puls 5.4Avalanche energy, single pulse I D = 1.35 A, V DD = 50 VE AS50mJAvalanche energy, repetitive t AR limited by T jmax 1)I D = 1.8 A, V DD = 50 VE AR 0.07Avalanche current, repetitive t AR limited by T jmax I AR 1.8A Gate source voltage V GS ±20V Gate source voltage AC (f >1Hz)V GS ±30Power dissipation, T C = 25°C P tot 25W Operating and storage temperatureT j , T stg-55... +150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 400 V, I D = 1.8 A, T j = 125 °Cd v/d t50V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC --5K/W Thermal resistance, junction - ambient, leaded R thJA--75SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 2)R thJA----7550Soldering temperature,1.6 mm (0.063 in.) from case for 10sT sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max.Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA500--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=1.8A-600-Gate threshold voltage V GS(th)I D=80µΑ, V GS=V DS 2.13 3.9Zero gate voltage drain current I DSS V DS=500V, V GS=0V,T j=25°C, T j=150°C --0.1-1100µAGate-source leakage current I GSS V GS=20V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=1.1A,T j=25°C T j=150°C --2.77.33-ΩGate input resistance R G f=1MHz, open Drain-12-Electrical Characteristics , at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Transconductance g fs V DS≥2*I D*R DS(on)max,I D=1.1A- 1.8-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -190-pFOutput capacitance C oss-80-Reverse transfer capacitance C rss-2-Effective output capacitance,3) energy related C o(er)V GS=0V,V DS=0V to 400V-9-pFEffective output capacitance,4)time relatedC o(tr)-17-Turn-on delay time t d(on)V DD=350V, V GS=0/10V,I D=1.8A, R G=25Ω-10-nsRise time t r-5-Turn-off delay time t d(off)-70-Fall time t f-15-Gate Charge CharacteristicsGate to source charge Q gs V DD=400V, I D=1.8A- 1.5-nC Gate to drain charge Q gd- 4.5-Gate charge total Q g V DD=400V, I D=1.8A,V GS=0 to 10V-9-Gate plateau voltage V(plateau)V DD=400V, I D=1.8A-5-V1Repetitve avalanche causes additional power losses that can be calculated as PAV=E AR*f.2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.3Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 4Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C-- 1.8AInverse diode direct current,pulsedI SM-- 5.4 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=400V, I F=I S ,d i F/d t=100A/µs -180-nsReverse recovery charge Q rr- 1.2-µC Peak reverse recovery current I rrm-8-A Peak rate of fall of reverserecovery currentdi rr/dt-200-A/µsTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unittyp.typ.Thermal resistanceR th10.1K/W R th20.184R th30.306R th4 1.207R th50.974R th60.251Thermal capacitanceC th10.00002806Ws/K C th20.0001113C th30.0001679C th40.000547C th50.001388C th60.0191 Power dissipation P tot = f (T C)SPD02N50C3Ptot2 Safe operating areaI D = f( V DS )parameter : D = 0 , T C=25°C3ID3 Transient thermal impedanceZ thJC = f (t p)parameter: D = t p/T-11010101010K/WZthJC4 Typ. output characteristicI D = f (V DS);T j=25°Cparameter: t p = 10 µs, V GSID5 Typ. output characteristicI D = f (V DS); T j=150°C parameter: t p = 10 µs, V GSID6 Typ. drain-source on resistanceR DS(on)=f(I D)parameter: T j=150°C, V GSRDS(on)7 Drain-source on-state resistanceR DS(on) = f (T j)parameter : I = 1.1 A, V = 10 VRDS(on)8 Typ. transfer characteristicsI D= f ( VGS ); V DS≥ 2 x I D x R DS(on)maxparameter: t p = 10 µsID9 Typ. gate charge V GS= f (Q Gate) parameter: I= 1.8 A pulsedVGS10 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF11 Avalanche SOAI AR = f (t AR)par.: T j≤ 150 °C4IAR12 Avalanche energyE AS = f (T j)par.: I D = 1.35 A, V DD = 50 VE13 Drain-source breakdown voltage V(BR)DSS = f (T j)SPD02N50C3V(BR)DSS14 Avalanche power lossesP AR = f (f )parameter: E AR=0.07mJ6PAR15 Typ. capacitancesC= f (V DS)parameter: V GS=0V, f=1 MHz16 Typ. C oss stored energyE oss=f(V DS)EDefinition of diodes switching characteristicsP-TO-252-3-1 (D-PAK)2003-10-07Page 11Published byInfineon Technologies AG ,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. 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