PHP23NQ11T,127;中文规格书,Datasheet资料

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启英泰伦 CI2311 数据手册说明书

CI2311数据手册高性能神经网络智能语音芯片TSSOP24长7.8mm 宽6.4mm 高1.2mm•脑神经网络处理器（BNPU）–BNPU V3，支持DNN\TDNN\RNN\CNN 等神经网络及并行矢量运算，可实现语音识别、声纹识别、命令词自学习、语音检测及深度学习降噪等功能•CPU 和存储器–CPU 主频可达240MHz –内置1MBytes Flash 存储器–内置640KBytes SRAM–内置512bit eFuse，可用于应用加密•Audio Codec–高性能低功耗audio ADC，SNR ≥95dB –低功耗audio DAC，SNR ≥95dB •音频接口–1路双通道PDM 接口•ADC 和PWM–内置2通道12bit SAR ADC –支持3路PWM 接口•GPIO–7个高速GPIO，响应速率可达20MHz –其中5个GPIO 支持5V 输入•复位和电源管理–内置电源管理单元PMU–PMU 输入电压范围:3.6V 到5.5V –内置上电复位（POR）–内置电压检测(PVD)•时钟–16MHz 外接晶体振荡器•通讯接口–1路IIC 接口–2路UART 接口，支持5V 通讯，支持最高3Mbps 速率•定时器和看门狗–内置4组32位定时器和2组看门狗•无线–GFSK 调制方式，1Mbps 模式的接收灵敏度可达-90dBm–最大发射输出功率达+8dBm –支持BLE 广播–频道切换快,可以实现多频道调频算法目录1概述 (3)1.1功能描述 (3)1.2芯片规格 (4)2引脚图和功能描述 (7)2.1引脚图 (7)2.2管脚描述 (8)2.3复用功能 (10)3电气特性 (11)4无线特性 (12)5封装信息 (13)6订购信息 (14)7应用方案 (15)7.1应用参考电路图 (15)7.2应用其它注意事项 (16)1概述1.1功能描述CI2311是启英泰伦研发的新一代高性能神经网络智能语音芯片，集成了启英泰伦自研的脑神经网络处理器BNPU V3和CPU内核，系统主频可达240MHz，内置高达640KByte的SRAM，集成PMU电源管理单元，集成双通道高性能低功耗Audio Codec和多路UART、IIC、PWM、GPIO、PDM等外围控制接口,集成2.400~2.483GHz世界通用ISM频段无线收发芯片，嵌入了基带通讯协议。

PHP23NQ11T资料

PHP23NQ11TN-channel TrenchMOS™ standard level FETRev. 01 — 17 May 2004Product data1.Product proﬁle1.1DescriptionN-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology.1.2Features1.3Applications1.4Quick reference data2.Pinning informations Low on-state resistances Low thermal resistance.s DC-to-DC converterss Switched-mode power supplies.s V DS ≤110V s I D ≤23As P tot ≤100Ws R DSon ≤70m Ω.Table 1:Pinning - SOT78 (TO-220AB), simpliﬁed outline and symbolPin DescriptionSimpliﬁed outlineSymbol1gate (g)SOT78 (TO-220AB)2drain (d)3source (s)mbmounting base;connected to drain (d)MBK10612mb3sdgmbb0763.Ordering information4.Limiting valuesTable 2:Ordering informationType numberPackage NameDescriptionVersionPHP23NQ11TTO-220ABPlastic single-ended package;heatsink mounted;1mounting hole;3leads SOT78Table 3:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)25°C ≤T j ≤175°C-110V V DGR drain-gate voltage (DC)25°C ≤T j ≤175°C;R GS =20k Ω-110V V GS gate-source voltage (DC)-±20V I D drain current (DC)T mb =25°C; V GS =10V;Figure 2and 3-23A T mb =100°C; V GS =10V;Figure 2-16A I DM peak drain current T mb =25°C; pulsed; t p ≤10µs;Figure 3-92A P tot total power dissipation T mb =25°C;Figure 1-100W T stg storage temperature −55+175°C T j junction temperature−55+175°C Source-drain diodeI S source (diode forward) current (DC)T mb =25°C-23A I SMpeak source (diode forward) current T mb =25°C; pulsed; t p ≤10µs-92A Avalanche ruggednessE DS(AL)S non-repetitive drain-sourceavalanche energyunclamped inductive load; I D =14A;t p =0.1ms; V DD ≤100V; R GS =50Ω;V GS =10V; starting at T j =25°C -93mJFig 1.Normalized total power dissipation as afunction of mounting base temperature.Fig 2.Normalized continuous drain current as afunction of mounting base temperature.T mb =25°C; I DM is single pulse; V GS =10V .Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.03aa1604080120050100150200T mb (°C)P der (%)03aa244080120050100150200T mb (°C)I der (%)P der P totP tot 25C °()-----------------------100%×=I der I DI D 25C °()-------------------100%×=03ao5110-1110102110102103V DS (V)I D (A)DC100 ms10 ms Limit R DSon = V DS / I D1 ms t p = 10 µs100 µs5.Thermal characteristics5.1Transient thermal impedanceTable 4:Thermal characteristicsSymbol ParameterConditions Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base Figure 4-- 1.5K/W R th(j-a)thermal resistance from junction to ambientvertical in still air-60-K/WFig 4.Transient thermal impedance from junction to mounting base as a function of pulse duration.03ao5010-210-111010-510-410-310-210-11t p (s)Z th(j-mb)(K/W)single pulseδ = 0.50.20.10.050.02t pt p TPtTδ =10-66.CharacteristicsTable 5:CharacteristicsT j=25°C unless otherwise speciﬁed.Symbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdown voltage I D=250µA; V GS=0VT j=25°C110--VT j=−55°C99--VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9and10T j=25°C234VT j=175°C1--VT j=−55°C-- 4.4VI DSS drain-source leakage current V DS=100V; V GS=0VT j=25°C--10µAT j=175°C--500µA I GSS gate-source leakage current V GS=±10V; V DS=0V-10100nA R DSon drain-source on-state resistance V GS=10V; I D=13A;Figure7and8T j=25°C-4970mΩT j=175°C-132189mΩDynamic characteristicsQ g(tot)total gate charge I D=23A; V DD=80V; V GS=10V;Figure13-22-nCQ gs gate-source charge-5-nC Q gd gate-drain (Miller) charge-10-nCC iss input capacitance V GS=0V; V DS=25V; f=1MHz;Figure11-830-pFC oss output capacitance-140-pF C rss reverse transfer capacitance-85-pFt d(on)turn-on delay time V DD=50V; R L=2.2Ω;V GS=10V;R G=5.6Ω-8-nst r rise time-39-ns t d(off)turn-off delay time-26-ns t f fall time-24-ns Source-drain diodeV SD source-drain(diode forward)voltage I S=11A; V GS=0V;Figure12-0.9 1.5V t rr reverse recovery time I S=11A; dI S/dt=−100A/µs; V GS=0V-64-ns Q r recovered charge-120-nCT j =25°C T j =25°C and 175°C; V DS >I D x R DSonFig 5.Output characteristics: drain current as afunction of drain-source voltage;typical values.Fig 6.Transfer characteristics: drain current as afunction of gate-source voltage; typical values.T j =25°CFig 7.Drain-source on-state resistance as a functionof drain current; typical values.Fig 8.Normalized drain-source on-state resistance factor as a function of junction temperature.03ao520510152000.511.52V DS(V)I D (A) 4.6 V T j = 25 °CV GS = 10 V4.8 V 5 V5.2 V 8 V4.4 V5.4 V6 V03ao54051015200246V GS (V)I D (A)V DS > I D x R DSonT j = 25 °C 150 °C03ao5300.050.10.150.205101520I D (A)R DSon (Ω)V GS = 10 VT j = 25 °C6 V8 V4.8 V5.2 V5.4 V5 V 4.6 V 03aa290123-60060120180T j (°C)aa RDSon R DSon 25C °()----------------------------=I D =1mA; V DS =V GS T j =25°C; V DS =5VFig 9.Gate-source threshold voltage as a function ofjunction temperature.Fig 10.Sub-threshold drain current as a function ofgate-source voltage.V GS =0V; f =1MHzFig 11.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.03aa32012345-60060120180T j (°C)V GS(th) (V)maxmin typ03aa3510-610-510-410-310-210-10246V GS (V)I D (A)maxtyp min 03ao561010210310410-11 10102V DS (V)C (pF)C issC ossC rssT j =25°C and 175°C; V GS =0V I D =23A; V DD =20V and 80VFig 12.Source (diode forward) current as a function ofsource-drain (diode forward) voltage; typical values.Fig 13.Gate-source voltage as a function of gatecharge; typical values.03ao550510152000.30.60.91.2V SD (V)I D (A)T j = 25 °C175 °CV GS = 0 V03ao57051015010203040Q G (nC)V GS (V)I D = 23 A T j = 25 °CV DD = 20 V80 V7.Package outlineFig 14.SOT78 (TO-220AB).REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IECJEDEC EIAJ SOT78SC-463-lead TO-220ABDD 1qpL123L 1(1)b 1e eb0510 mmscalePlastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT78DIMENSIONS (mm are the original dimensions)A E A 1cNote1. Terminals in this zone are not tinned.QL 2UNIT A 1b 1D 1e p mm2.54q Q A b D c L 2max.3.03.83.615.013.53.302.793.02.72.62.20.70.415.815.20.90.71.31.04.54.11.391.276.45.910.39.7L 1(1)E L 00-09-0701-02-16mounting base8.Revision historyTable 6:Revision historyRev Date CPCN Description0120040517-Product data (9397 750 13182)9397 750 13182© Koninklijke Philips Electronics N.V . 2004. All rights reserved.Product data Rev. 01 — 17 May 200411 of 12Contact informationFor additional information, please visit .For sales ofﬁce addresses, send e-mail to:sales.addresses@ .Fax: +31 40 27 248259.Data sheet status[1]Please consult the most recently issued data sheet before initiating or completing a design.[2]The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL .[3]For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.10.DeﬁnitionsShort-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.11.DisclaimersLife support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductorscustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’),relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to theseproducts,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speciﬁed.12.TrademarksTrenchMOS —is a trademark of Koninklijke Philips Electronics N.V .Level Data sheet status [1]Product status [2][3]DeﬁnitionI Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice.IIPreliminary dataQualiﬁcationThis data sheet contains data from the preliminary speciﬁcation.Supplementary data will be published at a later date.Philips Semiconductors reserves the right to change the speciﬁcation without notice,in order to improve the design and supply the best possible product.III Product data ProductionThis data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design,manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).© Koninklijke Philips Electronics N.V .2004.Printed in The NetherlandsAll rights are reserved.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice.No liability will be accepted by the publisher for any consequence of its use.Publication thereof does not convey nor imply any license under patent-or other industrial or intellectual property rights.Date of release: 17 May 2004Document order number: 9397 750 13182Contents1Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 11.1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.2Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.4Quick reference data. . . . . . . . . . . . . . . . . . . . . 12Pinning information. . . . . . . . . . . . . . . . . . . . . . 13Ordering information. . . . . . . . . . . . . . . . . . . . . 24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 25Thermal characteristics. . . . . . . . . . . . . . . . . . . 45.1T ransient thermal impedance . . . . . . . . . . . . . . 46Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 57Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 98Revision history. . . . . . . . . . . . . . . . . . . . . . . . 109Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 1110Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1111Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1112Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11。

KSC1623中文资料

KSC1623NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings T a =25°C unless otherwise notedElectrical Characteristics T a =25°C unless otherwise notedh FE ClassificationSymbol ParameterRatings Units V CBO Collector-Base Voltage 60V V CEO Collector-Emitter Voltage 50V V EBO Emitter-Base Voltage 5V I C Collector Current100mA P C Collector Power Dissipation 200mW T J Junction Temperature 150°C T STGStorage Temperature-55 ~ 150°CSymbol ParameterTest Condition Min.Typ.Max.Units I CBO Collector Cut-off Current V CB =60V, I E =00.1µA I EBO Emitter Cut-off Current V EB =5V, I C =00.1µAh FE DC Current GainV CE =6V, I C =1mA 90200600V CE (sat)Collector-Emitter Saturation Voltage I C =100mA, I B =10mA0.150.3V V BE (sat)Base-Emitter Saturation Voltage I C =100mA, I B =10mA 0.861.0V V BE (on)Base-Emitter On Voltage V CE =6V, I C =1mA 0.550.620.65V f T Current Gain Bandwidth Product V CE =6V, I C =10mA 250MHz C obOutput CapacitanceV CB =6V, I E =0, f=1MHz3pF Classification OY G L h FE90 ~ 180135 ~ 270200 ~ 400300 ~ 6001. Base2. Emitter3. CollectorKSC1623Low Frequency Amplifier & High Frequency OSC.•Complement to KSA812C1OMarkingh FE gradeSOT-23123KSC1623KSC1623TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。

PHP1N50E资料

GENERAL DESCRIPTIONQUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETERMAX.UNIT field-effect power transistor in a plastic envelope featuring high V DS Drain-source voltage 500V avalanche energy capability,stable I D Drain current (DC)2A blocking voltage,fast switching and P totTotal power dissipation50W high thermal cycling performance R DS(ON)Drain-source on-state resistance5Ωwith low thermal resistance.Intended for use in Switched Mode Power Supplies (SMPS),motor control circuits and general purpose switching applications.PINNING - TO220ABPIN CONFIGURATIONSYMBOLLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V DS Drain-source voltage -500V V DGR Drain-gate voltage R GS = 20 k Ω-500V ±V GS Gate-source voltage -30V I D Drain current (DC)T mb = 25 ˚C - 2.0A T mb = 100 ˚C - 1.3A I DM Drain current (pulse peak T mb = 25 ˚C -8.0A value)I DR Source-drain diode current T mb = 25 ˚C - 2.0A (DC)I DRM Source-drain diode current T mb = 25 ˚C -8.0A (pulse peak value)P tot Total power dissipation T mb = 25 ˚C-50W T stg Storage temperature -55150˚C T jJunction temperature-150˚CAVALANCHE LIMITING VALUESYMBOL PARAMETER CONDITIONSMIN.MAX.UNIT W DSSDrain-source non-repetitive I D = 2 A ; V DD ≤ 50 V ; V GS = 10 V ;unclamped inductive turn-off R GS = 50 Ωenergy T j = 25˚C prior to surge-120mJ T j = 100˚C prior to surge-20mJ W DSR 1Drain-source repetitive I D = 2 A ; V DD ≤ 50 V ; V GS = 10 V ;- 3.6mJunclamped inductive turn-off R GS = 50 Ω ; T j ≤ 150 ˚C energy1. Pulse width and frequency limited by T j(max)THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITRth j-mb Thermal resistance junction to-- 2.5K/W mounting baseRth j-a Thermal resistance junction to-60-K/W ambientSTATIC CHARACTERISTICSTmb= 25 ˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITV(BR)DSS Drain-source breakdown VGS= 0 V; ID= 0.25 mA500--V voltageVGS(TO)Gate threshold voltage VDS= VGS; ID= 0.25 mA 2.0 3.0 4.0VI DSS Drain-source leakage current VDS= 500 V; VGS= 0 V; Tj= 25 ˚C-10100µAVDS= 400 V; VGS= 0 V; Tj= 125 ˚C-0.1 1.0mAI GSS Gate-source leakage current VGS= ±30 V; VDS= 0 V-10100nARDS(ON)Drain-source on-state VGS= 10 V; ID= 1 A- 4.5 5.0ΩresistanceVSD Source-drain diode forward IF= 2 A ;VGS= 0 V-0.8 1.2V voltageDYNAMIC CHARACTERISTICSTmb= 25 ˚C unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNITg fs Forward transconductance VDS= 15 V; ID= 1 A0.50.9-SCiss Input capacitance VGS= 0 V; VDS= 25 V; f = 1 MHz-230300pFCoss Output capacitance-3550pFCrssFeedback capacitance-1430pFQg(tot)Total gate charge VGS= 10 V; ID= 2 A; VDS= 400 V-10-nCQgs Gate to source charge-1-nCQgdGate to drain (Miller) charge-5-nCtd on Turn-on delay time VDD= 30 V; ID= 2 A;-1015nst r Turn-on rise time VGS= 10 V; RGS= 50 Ω;-3045nstd off Turn-off delay time RGEN= 50 Ω-3040nstfTurn-off fall time-2030nst rr Source-drain diode reverse IF= 2 A; -dIF/dt = 100 A/µs;-350-ns recovery timeQrr Source-drain diode reverse VGS= 0 V; VR= 100 V- 2.5-µC recovery chargeL d Internal drain inductance Measured from contact screw on- 3.5-nHtab to centre of dieL d Internal drain inductance Measured from drain lead 6 mm- 4.5-nHfrom package to centre of dieL s Internal source inductance Measured from source lead 6 mm-7.5-nHfrom package to source bond padMECHANICAL DATANotes1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to preventdamage to MOS gate oxide.2. Refer to mounting instructions for TO220 envelopes.3. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1996All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。

AP2331SA-7;中文规格书,Datasheet资料

DescriptionThe AP2331 is single channel current-limited integrated high-side power switches optimized for hot-swap applications. The devices have fast short-circuit response time for improved overall system robustness and provide a complete protection solution for application subject to heavy capacitive loads and the prospect of short circuit. It offers reverse-current blocking, over-current, over-temperature and short-circuit protection, as well as controlled rise time and under-voltage lockout functionality.The device is available in SOT23 and SC59 packages.Features• Input voltage range: 2.7V – 5.2V • Fast short-circuit response time •0.4A accurate current limiting• 250m Ω on-resistance • Reverse-current blocking •Built-in soft-start with 0.7ms typical turn-on time • Over-current protection • Over-voltage protection • Short-circuit and thermal protection • ESD protection: 3KV HBM, 300V MM • Ambient temperature range: -40°C to +85°C •Available in “Green” molding compound (No Br, Sb) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3)•UL recognized, file number E322375• IEC60950-1 CB scheme certifiedPin AssignmentsApplications• LCD TVs & Monitors• Set-Top-Boxes, Residential Gateways • Laptops, Desktops, Servers • Printers, Docking Stations, HUBs •Smart phones, e-ReadersNotes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)and <1000ppm antimony compoundsTypical Application Circuit(Top View)(Top View)SC59SOT23ININGNDGNDOUTOUTPin Name Pin Number DescriptionsGND 1GNDOUT 2 Switch output pinpinIN 3 VoltageinputAbsolute Maximum RatingsSymbol Parameter Ratings Units ESD HBM Human Body Model ESD Protection 3 KV ESD MM Machine Model ESD Protection 300 V V IN Input Voltage relative to GND 6.5 VV OUT Output Voltage relative to GND V IN +0.3 VI LOAD Maximum Continuous Load Current Internal Limited AT JMAX Maximum Junction Temperature 150 °CT ST Storage Temperature Range (Note 4) -65 to +150 °C Note: 4. UL Recognized Rating from -30°C to +70°C (Diodes qualified T ST from -65°C to +150°C)Recommended Operating ConditionsSymbol Parameter Min Max Units V IN Input voltage relative to GND 2.7 5.2 VI OUT Output Current 0 0.2 AT A Operating Ambient Temperature -40 +85 °CElectrical Characteristics (T A= 25°C, V IN= +5.0V, unless otherwise stated.)Symbol Parameter Test Conditions (Note 5) Min Typ. Max Unit V UVLO Input UVLO V IN rising 2.35 2.65 VI Q Input quiescent current Above UVLO, I OUT = 0 85 125 µAI REV Reverse leakage current V IN = 0V, V OUT = 5V, I REV at V IN 0.01 0.10 µA R DS(ON) Switch on-resistance V IN = 5V, I OUT = 0.2A 100 250 350 mΩI LIMIT Over-load current limit V IN = 5V, V OUT = 4V 0.3 0.4 0.5 AI OS Short-circuit current OUT shorted to ground 0.3 0.4 0.5 AI ROCP Reverse-current trigger point V IN = 5.0V, V OUT = 5.2V 0.20 0.25 AT TRIG Deglitch time from reverse current triggerto MOSFET turn off(Note 6) 0.5 0.7 1.0 msV OVP Output over-voltage trip point (Note 7) 5.3 5.6 VT OVP Debounce time from output over-voltageto MOSFET turn off15µsV REC Recovery after turn-off from ROCP andOVP101% V INT ON Output turn-on time (Note 8) C L = 0.1µF, R LOAD = 20Ω(UVLO to 90% V OUT-NOM)0.7 msT SHDN Thermal shutdown threshold V IN = 2.7V to 5.2V 150 °C T HYS Thermal shutdown hysteresis 20 °CθJA Thermal Resistance Junction-to-Ambient(Note 9)SOT23215o C/WSC59255o C/WNotes: 5. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.6. When reverse current triggers at I ROCP = 0.20A, the reverse current is continuously clamped at I ROCP for 0.7ms deglitch time until MOSFET isturned off.7. During output over-voltage protection, the output draws approximately 60µA current.8. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between V IN/0.2ms toV IN/1ms.9. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout.Typical Performance CharacteristicsUVLO Increasing1ms/divUVLO Decreasing5ms/divOver-Load Current Limit5ms/divShort-Circuit Current Limit100µs/divDeglitch Time from Reverse-Current Trigger toMOSFET Turn-Off200µs/divReverse-Current Limit200µs/div550µs200mATypical Performance Characteristics (cont.)Output Over-Voltage Trip Point10ms/divOutput Turn-On Time200µs/div-40-20020406080AMBIENT TEMPERATURE (C)Fig. 1 Quiescent Supply Current vs.Ambient Temperature °0S U P P L Y C U R R E N T (µA )AMBIENT TEMPERATURE (C)Fig. 2 Short Circuit Current Limit vs.Ambient Temperature °0.390S H O R T C I R C U I T C U R R E N T (m A)INPUT VOLTAGE (V)Fig. 3 Output Turn On-Time vs. Input Voltage O U T P U T T U R N O N -T I M E (m s )AMBIENT TEMPERATURE (C)Fig. 4 Switch On-Resistance vs.Ambient Temperature°050100150O N -S T A T E R E S I S T A N C E (m )Ω OVP at 5.4VOVP recovery at 5.1VC L =0.1µF Rload=20ΩTypical Performance Characteristics (cont.)AMBIENT TEMPERATURE (C)Fig. 5 Current Limit Trip Threshold vs.Ambient Temperature °0.3880.402S U P P L Y C U R R E N T (µA )050100150200250300R E V E R S E C U R R E N T L I M I T (m A )350400450500-40-20020406080AMBIENT TEMPERATURE (C)Fig. 6 Reverse Current Limit vs.Ambient Temperature°Application informationUnder-Voltage Lockout (UVLO)Under-voltage lockout function (UVLO) guarantees that the internal power switch is initially off during start-up. The UVLO functions only when the power supply has reached at least 2.5V (TYP). Whenever the input voltage falls below approximately 2.5V, the power switch is turned off. This facilitates the design of hot-insertion systems where it is not possible to turn off the power switch before input power is removed. Over-Current and Short-Circuit ProtectionAn internal sensing FET is employed to check for over current conditions. Unlike current-sense resistors, sense FETs do not increase the series resistance of the current path. When an over current condition is detected, the device maintains a constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault stays long enough to activate thermal limiting.The different overload conditions and the corresponding response of the AP2331 are outlined below:S.NO Conditions Explanation Behavior of the AP23311 Short-circuit condition at start-up Output is shorted before inputvoltage is applied or beforethe part is powered up.The IC senses the short circuit and immediately clampsoutput current to a certain safe level namely I LIMIT2 Short-circuit or Over currentconditionShort-Circuit or Overloadcondition that occurs whenthe part is powered up andabove UVLO.•At the instance the overload occurs, higher current mayflow for a very short period of time before the current limitfunction can react.•After the current limit function has tripped (reached theover-current trip threshold), the device switches intocurrent limiting mode and the current is clamped at I LIMIT.3 Gradual increase from nominaloperating current to I LIMITLoad increases gradually untilthe current-limit threshold.The current rises until I LIMIT. Once the threshold has beenreached, the device switches into its current limiting modeand is clamped at I LIMIT.Reverse-Current ProtectionThe USB specification does not allow an output device to source current back into the USB port. In a normal MOSFET switch, current will flow in reverse direction (from the output side to the input side) when the output side voltage is higher than the input side. A reverse current limit feature is implemented in the AP2331 to limit such back currents. Reverse current limit is always active in AP2331. Reverse current is limited at IROCP level and when the fault exists for more than 700µs, output device is disabled and shutdown. This is called the "Deglitch time from reverse current trigger to MOSFET turn off”. Recovery from IROCP occurs when the output voltage falls to 101% of input voltage.Over-Voltage ProtectionThe device has an output over-voltage protection that triggers when the output voltage reaches 5.3V(MIN). When this fault condition stays on for longer than 15µs, (This is called the “Debounce time from output over-voltage to MOSFET turn off”) output device is disabled and shutdown. Recovery from ROVPoccurs when the output voltage falls to 101% of input voltage.Thermal ProtectionThermal protection prevents the IC from damage when the die temperature exceeds safe margins. This mainly occurs when heavy-overload or short-circuit faults are present for extended periods of time. The AP2331 implements a thermal sensing to monitor the operating junction temperature of the power distribution switch. Once the die temperature rises to approximately +150°C, the Thermal protection feature gets activated as follows: The internal thermal sense circuitry turns the power switch off thus preventing the power switch from damage. Hysteresis in the thermal sense circuit allows the device to cool down to approximately +20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load fault is removed, resulting in a pulsed output.Discharge FunctionWhen input voltage falls below UVLO, the discharge function is active. The output capacitor is discharged through an internal NMOS that has a discharge resistance of 800Ω. Hence, the output voltage drops down to zero. The time taken for discharge is dependent on the RC time constant of the resistance and the output capacitor. Discharge time is calculated when UVLO falling threshold is reached to output voltage reaching 300mV.Power Dissipation and Junction TemperatureThe low on-resistance of the internal MOSFET allows the small surface-mount packages to pass large current. Using the maximum operating ambient temperature (T A) and R DS(ON), the power dissipation can be calculated by:P D = R DS(ON) × I2Finally, calculate the junction temperature:T J = P D x RθJA + T AWhere:T A= Ambient temperature °CRθJA = Thermal resistanceP D = Total power dissipationOrdering Information (cont.)AP 2331 X - 77 : Tape & ReelPackage Packing SA : SOT23W : SC59Device Package CodePackaging (Note 10)7” Tape and ReelQuantityPart Number SuffixAP2331SA-7SA SOT23 3000/Tape & Reel-7 AP2331W-7WSC593000/Tape & Reel-7Note:10. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at/datasheets/ap02001.pdf.Marking Information(1)SOT23Device Package Identification CodeAP2331SA-7SOT23KJ(2) SC59W ( Top View )XX : Identification code W : Week : A~Z : 1~26 week;X : A~Z : Internal codeY : Year 0~9a~z : 27~52 week; z represents 52 and 53 weekDevice Package Identification CodeAP2331W-7SC59KNPackage Information (All Dimensions in mm)Package Type:(1) SOT23(2) SC59SOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmSC59Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D - - 0.95 G - - 1.90 H 2.90 3.10 3.00 J 0.0130.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75α0° 8° - All Dimensions in mmSuggested Pad Layout (1) SOT23(2) SC59Dimensions Value (in mm)Z 2.9X 0.8Y 0.9C 2.0E 1.35Dimensions Value (in mm)Z 3.4X 0.8Y 1.0C 2.4E 1.35X EYCZX EYCZ分销商库存信息: DIODESAP2331SA-7。

SA23-12HWA中文资料

YELLOW AND GREEN CATEGORIZED FOR COLOR .
lMECHANICALLY RUGGED. lSTANDARD : GRAY FACE, WHITE SEGMENT.
Package Dimensions & Internal Circuit Diagram
Notes:
5600
14000 Common Cathode, Rt. Hand Decimal Common Anode, Rt. Hand Decimal
GREEN (GaP)
3600
9000 Common Cathode, Rt. Hand Decimal Common Anode, Rt. Hand Decimal
Kingbright
Features
lLARGE SIZE. l2.3 INCH DIGIT HEIGHT. lLOW CURRENT OPERATION.
®
57mm (2.3INCH) SINGLE DIGIT NUMERIC DISPLAYS
SA23-11 SA23-12 SBA23-11 SC23-11 SC23-12 SBC23-11
HIGH EFFICIENCY RED (GaAsP/GaP) GREEN (GaP)
5600 3600
14000 9000
Common Anode, Rt. Hand Decimal Common Cathode, Rt. Hand Decimal
7-S23-2
Electrical / Optical Characteristics at TA=25°C
1. All dimensions are in millimeters (inches), Tolerance is ±0.25(0.01")unle ss otherwise noted. 2. Specifications are subjected to change whitout notice.

BT23 Datasheet说明书

BT23 Datasheet Amp’ed RF Technology, Co., Ltd.BT23 Product Specification11.6mm x 13.5mmDescriptionOur micro-sized Bluetooth module, with integrated antenna, is the smallest form factor available providing a complete RF platform. The BT23 is designed for maximum performance in a minimal space and includes 6 general purpose and ADC/DAC IO lines, several serial interface options, and up to 1.5M bps data throughput.The BT23 is a surface mount PCB module that provides fully embedded, ready to use Bluetooth wireless technology. The reprogrammable flash memory contains embedded firmware for serial cable replacement using the Bluetooth SPP profile. Other popular Bluetooth profiles, such as OBEX, are also available.Customized firmware for peripheral device interaction, power optimization, security, and other proprietary features may be supported and can be ordered pre-loaded and configured . Additional Documentation ● BT HW Design Guide ● BT Getting Started Guide ● abSerial User Guide ● abSerial Reference Guide ● abSerial Configuration GuideFeatures Bluetooth Radio● Fully embedded Bluetooth v2.1 Serial and OBEXProfiles● Class 2 radio● Complete RF ready module ● 128-bit encryption security ● Range up to 25m LOS ● FCC & Bluetooth qualified ● Multipoint mode supportedST Micro ARM Cortex microprocessor up to 72MHz Memory● 256K bytes flash memory ● 48K bytes RAM memory Data Rate● 1.5M bps typical data rate ● EDR supported Serial Interface● UART, up to 2M baud ● Buffered SPI interface ● I2C interface General I/O● 6 general purpose I/O● 4x12-bit A/D input ● 1 DAC output ● 1 LPO input User Interface ● AT command set● Firmware upgrade over UARTTable of Contents1 Software Architecture (4)1.1 Lower Layer Stack (4)1.2 Upper Layer Stack: Amp’ed UP (4)1.3 HCI Interface (4)1.4 AT Command Set: abSerial (4)2 Hardware Specifications (5)2.1 Recommended Operating Conditions (5)2.2 Current Consumption (5)2.3 Selected RF Characteristics (6)2.4 Absolute Maximum Ratings (6)2.5 I/O Operating Characteristics (6)2.6 Pin Assignment (7)2.7 Pin Placement Diagram (Top View) (7)2.8 Layout Drawing, BT23 (8)3 Hardware Block Diagram (8)4 Hardware Design (9)4.1 Module Reflow Installation (9)4.2 GPIO Interface (9)4.3 UART Interface (10)4.4 Reset Circuit (11)4.4.1 External Reset Circuit: (11)4.4.2 Internal Reset Circuit: (11)4.5 External LPO Input Circuit (12)4.6 Apple CP Reference Design (12)5 FCC Regulatory Compliance (14)5.1 Modular Approval, FCC and IC (14)5.2 FCC Label Instructions (14)6 Ordering Information (15)7 Feature Comparison (15)8 Revision History (15)1 Software Architecture1.1 Lower Layer Stack●Full Bluetooth v2.1 enhanced data rate (EDR)●Device power modes: active, sleep and deep sleep●Wake on Bluetooth feature optimized power consumption of host CPU●Authentication and encryption●Encryption key length from 8 to 128 bits●Persistent FLASH memory for BD Address and user parameter storage●ACL (Asynchronous Connection Less) packet types: DM1, DH1, DM3, DH3, DM5, DH5, 2-DH1, 2-DH3, 2-DH5, 3-DH1, 3-DH3, 3-DH5, AUX1●SCO and eSCO (Synchronous Connection Oriented) packet support.●Point to multipoint and scatternet support: 3 master and 7 slave links allowed (10 active linkssimultaneously)●Sniff, and hold modes: fully supported to maximum allowed intervals●Master slave switch, supported during connection and post connection●Dedicated Inquiry Access Code, for improved inquiry scan performance●Dynamic packet selection, channel quality driven data rate to optimize link performance●Bluetooth test modes per Bluetooth v2.1 specification●802.11b/g/n co-existence: AFH●Vendor specific HCI commands to support device configuration and certification test modes1.2 Upper Layer Stack: Amp’ed UP●SPP, OBEX, SDAP, GAP, and DUN protocols●RFComm, SDP, and L2CAP supported●Multipoint with 7 simultaneous slaves1.3 HCI Interface●Bluetooth v2.1 specification compliant●HCI UART transport layer (H4)1.4 AT Command Set: abSerial●Please see abSerial Reference Guide for details2 Hardware SpecificationsGeneral Conditions (V IN= 3.0V and 25°C)2.1 Recommended Operating Conditions2.2 Current Consumption2.3 Selected RF Characteristics2.4 Absolute Maximum Ratings2.5 I/O Operating Characteristics2.6 Pin Assignment2.7 Pin Placement Diagram (Top View)2.8 Layout Drawing, BT23Size: 11.6 mm x 13.5 mm x 2.2 mm (height)3 Hardware Block Diagram4 Hardware DesignAmp’e d RF modules support UART, USB, SPI, and GPIO hardware interfaces. Please note that the usage of these interfaces is dependant upon the firmware that is loaded into the module, and is beyond the scope of this document. The AT command interface uses the main UART by default.Notes●All unused pins should be left floating; do not ground.●All GND pins must be well grounded.●The area around the antenna should be free of any ground planes, power planes, trace routings,or metal for at least 6.5 mm in all directions.●Traces should not be routed underneath the module.4.1 Module Reflow InstallationThe BT23 is a surface mount Bluetooth module supplied on a 14 pin, 6-layer PCB. The final assembly recommended reflow profiles are:For non Pb-free applications, Sn63Pb37 solder is recommended.●Maximum peak temperature of 208° - 210°C (below 220°C).●Maximum rise and fall slope after liquidous of < 2°C/second.●Maximum rise and fall slope after liquidous of < 2°C/second.●Maximum time at liquidous of 50 – 90 seconds.For RoHS/Pb-free applications, Sn96.5/Ag3.0/Cu0.5 solder is recommended.●Maximum peak temperature of 230° - 240°C (below 250°C).●Maximum rise and fall slope after liquidous of < 2°C/second.●Maximum rise and fall slope after liquidous of < 3°C/second.●Maximum time at liquidous of 40 – 80 seconds.4.2 GPIO InterfaceAll GPIOs are capable of sinking and sourcing 4mA of I/O current. GPIO [1] to GPIO [6] are internally pulled down with 100KΩ (nominal) resistors.4.3 UART InterfaceThe UART is compatible with the 16550 industry standard. Four signals are provided with the UART interface. The TXD and RXD pins are used for data while the CTS and RTS pins are used for flow control.Typical RS232 CircuitConnection to Host Device4.4 Reset CircuitTwo types of system reset circuits are detailed below.4.4.1 External Reset Circuit:Note: R PU ranges from 30K ohm to 50K ohm internally.4.4.2 Internal Reset Circuit:Notes:- R PU ranges from 30K ohm to 50K ohm internally.- R RST should be from 1K ohm to 10K ohm4.5 External LPO Input CircuitAn optional low power oscillator input may be added to allow deep sleep and sniff modes.4.6 Apple iOS CP Reference DesignPart 1. BT moduleLPO Parameters:Frequency: 32.768 KHz Tolerance: 150 ppm Voltage LevelsLow: 0.9 V High: 1.8 VInput Capacitance: 2.5 pF maximumConfigurations:See configuration guide: UseExtLPO AllowSniffNote: PT30 located on the bottom of the modulePart 2. Co-processorPart 3. Power switch5 FCC Regulatory ComplianceThis module has been tested and found to comply with the FCC Part15 and IC RSS-210 rules. These limits are designed to provide reasonable protection against harmful interference in approved installations. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation.Modifications or changes to this equipment not expressly approved by Amp’ed RF Technology may void the user’s authority to operate this equipment.5.1 Modular Approval, FCC and ICFCC ID: X3ZBTMOD2IC: 8828A-MOD2In accordance with FCC Part 15, the BT23 is listed above as a Limited ModularTransmitter device.5.2 FCC Label InstructionsThe outside of final products that contain a BT23 device must display a label referring to the enclosed module. This exterior label can use wording such as the following:Contains Transmitter ModuleFCC ID: X3ZBTMOD2IC: 8828A-MOD2Any similar wording that expresses the same meaning may be used.6 Ordering Information7 Feature Comparison8 Revision History。

WS1N 精品系列产品使用说明书

为胜智控WS1N精品系列产品使用说明书--V1.1适用于以下型号：WS1N-20MR/MT-K-BWS1N-24MR/MT-K-BWS1N-28MR/MT-K-BWS1N-30MR/MT-K-BWS1N-32MR/MT-K-B产品目录第一章产品概述 (1)1.1产品概述 (1)1.2基本参数 (1)1.3使用环境及安装方式 (1)第二章产品展示 (2)2.1产品主要硬件说明 (2)2.2产品正面效果图................................2-3第三章电气设计参考.. (4)3.1电源及功耗 (4)3.2232通讯口说明 (4)3.3485通讯口说明 (5)3.4输入内部等效电路与接线说明 (6)3.5输出内部等效电路与接线说明.....................6-83.6模拟量输入说明 (8)3.7模拟量输出说明 (9)3.8产品接线图...................................9-10第四章编程参考 (11)4.1应用环境 (11)4.2元件号的分配和功能概要 (11)4.3特殊元件说明..................................11-124.4指令列表....................................12-144.5此版本不支持指令列表, (14)第五章常见问题及解决方案 (15)第六章保修条款 (15)第一章产品概述1.1产品概述·WS1N AC220V 系列，采用ARMCortex-M332位MISC 内核芯片，运算速度快，存储空间大。

·下载速度为9.6Kbps/19.2Kbps;直接使用三菱GX Developer 或者GX Works2编程、下载、调试、监视（不支持监控写入）.·默认采用DC 24V 供电，可选择直接AC220V 交流供电（需联系客服改）;输出继电器均不打开条件下，静态电流30MA;每打开一路增加13MA 电流，如1-24mr 输出继电器全打开后电流为160MA（3.84W）。

2N5657;中文规格书,Datasheet资料

2N5657SILICON NPN TRANSISTORsSTMicroelectronics PREFERRED SALESTYPEsNPN TRANSISTORDESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current,high voltage converters and AC line relays.December 2000ABSOLUTE MAXIMUM RATINGS®1/5s t ePr od u c t () -ls Ob so e t ePr od u c t (THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)Safe Operating AreaDerating Curve2N5657l)Ob so e t ePoc ) -O t (sDC Current Gain (NPN type)Collector Emitter Saturation Voltage (NPN type)DC Current Gain (PNP type)Collector Emitter Saturation Voltage (PNP type)2N56572N5657l s l c )Ob so e t ePr od u c t () -O bs o e t eP r od u t (sInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2000 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.2N5657分销商库存信息: STM2N5657。

23K256-ISN;23K256-IST;23A256-ISN;23K256-IP;23A256-IP;中文规格书,Datasheet资料

Features:
• Max. Clock 20 MHz • Low-Power CMOS Technology: - Read Current: 3 mA at 1 MHz - Standby Current: 4 A Max. at +85°C • 32,768 x 8-bit Organization • 32-Byte Page • HOLD pin • Flexible Operating modes: - Byte read and write - Page mode (32 Byte Page) - Sequential mode • Sequential Read/Write • High Reliability • Temperature Ranges Supported: - Industrial (I): -40C to +85C -40C to +125C - Automotive (E): • Pb-Free and RoHS Compliant, Halogen Free
DS22100F-page 2
2008-2011 Microchip Technology Inc.
/
23A256/23K256
TABLE 1-2: AC CHARACTERISTICS
Industrial (I): TA = -40°C to +85°C Automotive (E): TA = -40°C to +125°C Min. — — — — 50 32 32 25 50 50 50 50 50 32 32 25 10 10 10 10 10 10 10 10 — — 50 32 32 25 50 32 32 25 50 32 32 25 — — — — 0 Max. 10 16 16 20 — — — — — — — — — — — — — — — — — — — — 2 2 — — — — — — — — — — — — 50 32 32 25 — Units MHz MHz MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns us us ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Test Conditions VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) Note 1 Note 1 VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) VCC 1.5V (I-Temp) VCC 1.8V (I-Temp) VCC 3.0V (E-Temp) VCC 3.0V (I-Temp) Note 1

742730023;中文规格书,Datasheet资料

8.1 8.0 7.02012-06-272012-04-042007-04-10SStSStSMuSStSMu-Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyTel. +49 (0) 79 42 945 - 0A Dimensions: [mm]C Schematic:F Typical Impedance Characteristics: F Derating Curve:F Layout examples:H4: Classification Wave Soldering Profile:H5: Classification Wave ProfileProfile FeaturePreheat- Temperature Min (T smin )- Temperature Typical (T stypical ) - Temperature Max (T smax ) - Time (t s ) from (T smin to T smax )Δ preheat to max Temperature Peak temperature (T p )Time of actual peak temperature (t p )Ramp-down rate - Min - Typical - MaxTime 25°C to 25°C Pb-Free Assembly 100°C 120°C 130°C 70 seconds 150°C max.250°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesSn-Pb Assembly 100°C 120°C 130°C 70 seconds 150°C max.235°C - 260°C max. 10 secondsmax. 5 second each wave ~ 2 K/s ~ 3.5 K/s ~ 5 K/s 4 minutesrefer to EN 61760-1:2006H Soldering Specifications:I Cautions and Warnings:The following conditions apply to all goods within the product series of WE-MLSof Würth Elektronik eiSos GmbH & Co. KG:General:All recommendations according to the general technical specifications of the data-sheet have to be complied with.The disposal and operation of the product within ambient conditions which probably alloy or harm the component surface has to be avoided.If the product is potted in customer applications, the potting material might shrink during and after hardening. Accordingly to this the product is exposed to the pressure of the potting material with the effect that the ferrite body and termination is possibly damaged by this pressure and so the electrical as well as the mechanical characteristics are endanger to be affected. After the potting material is cured, the ferrite body and termination of the product have to be checked if any reduced electrical or mechanical functions or destructions have occurred.The responsibility for the applicability of customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products do also apply for customer specific products.Washing varnish agent that is used during the production to clean the application might damage or change the characteristics of the plating. The washing varnish agent could have a negative effect on the long term function of the product.Direct mechanical impact to the product shall be prevented as the ferrite material of the ferrite body could flake or in the worst case it could break.Product specific:Follow all instructions mentioned in the datasheet, especially:•The solder profile has to be complied with according to the technical reflow soldering specification, otherwise no warranty will be sustai-ned.• Wave soldering is only allowed after evaluation and approval.•All products are supposed to be used before the end of the period of 12 months based on the product date-code, if not a 100% solderabi-lity can´t be warranted.•Violation of the technical product specifications such as exceeding the nominal rated current will result in the loss of warranty.1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the are-as, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibi-lity for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime can-not be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component.3. Best Care and AttentionAny product-specific notes, warnings and cautions must be strictly observed.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve spe-cific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Secti-on 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a stan-dard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability ex-pectancy before or when the product for application design-in disposal is considered.The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .J Important Notes:The following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:分销商库存信息: WURTH-ELECTRONICS 742730023。

232266193147中文资料

PTC Thermistors, Overload ProtectionFor Telecommunication2322 66. 9....Vishay BCcomponentsFEATURES• Wide resistance range in telecom area 4... to 70 Ω• Fast protection against power contact faults • Withstand high overload currents of up to 10 A• High voltage withstanding capabilities for the larger sized thermistors• Good tracking over a wide temperature range for all matched or binned types• UL1434 approved types available (XGPU2) • Excellent stability over extended time•All telecom PTCs are coated with a high temperature silicon lacquer (UL94V0) to protect them from any harsh environments and to improve their lifetime. APPLICATIONS• Main Distribution Frame (MDF) • Central Office Switching (C.O.)• Subscriber Terminal Equipment (T.E.) •Set-top box (S.B.).MARKINGClear marking on a grey coated body.BC and R25 value.DESCRIPTIONAdvanced developments in telephony equipment in recent years have radically altered the protection requirements for both exchange and subscriber equipment. The Vishay BCcomponents range of Positive Temperature Coefficient (PTC) thermistors includes devices specially designed to provide overcurrent protection.Typical telephone line showing where PTC thermistors can be used for overcurrent protection.1.MDF: Main Distribution Frame; C.O.: Central Office Switching; T.E.: Subscriber Terminal Equipment; S.B.: Set-top Box.2.UL 1434 approved types.元器件交易网2322 66. 9....Vishay BCcomponentsPTC Thermistors, Overload ProtectionFor TelecommunicationDIMENSIONSin millimeters COMPONENT OUTLINEFor dimensions see Specific Physical Dimentions and Packaging table.Lead pitch F = 5 mm +0.6/-0.1.Lead thickness d = 0.6 mm ±10%.OVERCURRENT PROTECTION OF TELECOMMUNICATION LINESThe PTC thermistor must protect the telephone line circuit against overcurrent which may be caused by the following examples:• Surges due to lightning strikes on or near to the line plant. • Short-term induction of alternating voltages from adjacent power lines or railway systems, usually caused when these lines or systems develop faults.• Direct contact between telephone lines and power lines.To provide good protection under such conditions a PTC thermistor is connected in series with each line, usually as secondary protection; see Typical Telephone Line drawing on page 1. H owever, even with primary line protection (usually a gas discharge tube), the PTC thermistor must fulfil severe requirements.Surge pulses of up to 2 kV can occur and in order to withstand short-term power induction the PTC thermistor must withstand high voltages. If the line has primary protection a 220 V to 300 V PTC thermistor is adequate.Without primary protection, however, a 600 V PTC device is necessary. Vishay BCcomponents manufacturers a range of PTC thermistors (see Electrical Data and Ordering Information Table ) covering both requirements.In the case of direct contact between the telephone line and a power line, the PTC thermistor must withstand very highinrush power at normal mains voltage. Under such conditions, overload currents of up to 10 A on a 230 V mains could occur for up to several hours. To handle this power, the resistance/temperature characteristic of the thermistor must have a very steep slope and the ceramic must be extremely homogeneous.In case of overcurrent due to short-term induction of alternating voltages, currents of several AMPs with voltages as high as 650 V RMS can be present for several seconds For standard high voltage applications, resistance values from 25 to 50 Ω are available. H owever, ISDN networks which carry high-frequency sound and vision, need lower line impedance.Telecommunication designers are therefore demanding high voltage thermistors with much lower R 25 values, which places even greater demands on the manufacture of PTC thermistors. For these applications PTC thermistors which have a R 25 value of 10 Ω with voltages in the 300 to 600 V RMS range are available.In a typical telephone line application, two PTC thermistors are used, one each for the tip and ring (or A and B) wire together with their series resistors. For good line balance it is important that the thermistor and resistor pairs are matched.On request, Vishay BCcomponents can supply matched or binned PTC thermistors with R 25 values matched to as close as 0.5 Ω .元器件交易网2322 66. 9....PTC Thermistors, Overload ProtectionFor TelecommunicationVishay BCcomponentsNotes1.Taped in accordance with “IEC 60286-2”; standard packaging: 1500 units/reel.2.Naked disc ceramic for substrate mounting, available on request.3.Insulated version is also available.7.0 4.0 2.5 ±0.5−10.0taped H0 = 16 mm661 931218.5 4.0 2.5 ±0.5 4.1 ±0.511.5bulk661 931248.5 4.0 2.5 ±0.5−11.5taped H0 = 16 mm661 931468.5 4.0 2.5 ±0.5 4.1 ±0.511.5bulk661 931358.0 5.0 2.5 ±0.5−11.0taped H0 = 16 mm661 930568.5 4.0 2.0 ±0.5−11.0taped H0 = 16 mm661 9313910.5 5.0 2.0 ±0.5−12.6taped H0 = 16 mm662 9312913 5.5 4.0 ±1.020 min.18.0bulk662 9311413 5.5 4.0 ±1.020 min.18.0bulk662 93131DMAX.TMAX.H2L1H3MAX.PACKAGING(1)(2)CATALOGNUMBER2322 ... .....PACKAGINGAll tape and reel specifications are in accordance with “IEC 60286-3”. Basic dimensions are given in the drawing below, theDimensions of the Reel drawing, and tape and other Devices and Reel Dimensions tables.TAPE SPECIFICATIONS元器件交易网2322 66. 9....Vishay BCcomponents PTC Thermistors, Overload ProtectionFor TelecommunicationF lead to lead distance 5+0.6 to −0.1guaranteed between component and tape∆h component alignment0±2W tape width18+1 to −0.5W 0hold down tape width≥12.3−W 1hole position9±0.5W 2hold down tape position ≤3.0−H 1component heightsee Speciﬁc Physical Dimensions tableH 2component body to seating plane 4±1H 3component top to seating planesee Speciﬁc Physical Dimensions tableH 0lead-wire clinch height 16±0.5D 0feed hole diameter 4±0.2t total tape thickness ≤0.9−with cardboard tape 0.5 ±0.1 mmLlength of snipped lead≤11−SYMBOLPARAMETER DIMENSIONS TOLERANCEREMARKS元器件交易网。

LA5667PDF资料下载_LA5667DATASHEET文档

MOX-5-122004J - MOX-5-122005F - MOX-5-122006F - MOX-5-122506F - MOX5-12-2506F - MOX5-12-250MEGO -MOX5-123.49MEG1 - MOX-5-123004J - MOX512349MEG1 - MOX5-12349MEG1 - MOX-5-124003J - MOX-5-124005J - MOX-5-124006J - MOX-5-124006P - MOX-5-125005K - MOX-5-125006J - MOX-5-125605J - MOX-5-126004J - MOX-5-126604F - MOX-5-126904F - MOX-5-127604F - MOX-5-128504J - MOX513 - MOX-5-1310 - MOX-5-131003F - MOX-5-131004F - MOX5-13-100-5 - MOX-5-131005F - MOX-5-131007F - MOX-5-131007G - MOX5-131007G - MOX5131007J - MOX-5-131007J - MOX5-13-1007J - MOX-5-131007K -MOX-5-131008F - MOX-5-131009F - MOX5-13-100MEG-5 - MOX5-13-10MEG-5 - MOX-5-131506F - MOX-5-131507J -MOX-5-132003F - MOX-5-132006F - MOX-5-132006J - MOX-5-132006K - MOX-5-133003K - MOX-5-133006F - MOX-5-133205F - MOX-5-133205F1 - MOX-5-133205G - MOX-5-134003J - MOX-5-134005F - MOX-5-13-4005F - MOX-5-134005J - MOX-5-134006F - MOX-5-13-40MEG-1P - MOX5-13-40MEG-1PC - MOX-5-13-40MEG-1PCT - MOX5-13-40MEG-1PCT - MOX-5-135003F -MOX5136504J - MOX-5-136504J - MOX-5-136504J1 - MOX5136MEG1 - MOX-5-13-6MEG-1 - MOX-5-137503J - MOX5-153J -MOX5183J - MOX5-183J - MOX5-1R0J - MOX5202J - MOX5-202J - MOX5-221J - MOX5-223J - MOX5297F - MOX5-297F - MOX52R2J - MOX5-2R2J - MOX5-3-5 - MOX5-6.6MEG-1PCT - MOX-5-622005F - MOX-5-625004K - MOX-5-625004KE - MOX5821J - MOX5-821J - MOX-5-931008J1 - MOX5R15J - MOX5-R15J - MOX5-R200J - MOX5RD - MOX-5RD - MOX68EM05F32 - MOX68EM05JB4 -MOX68EM05JP7 - MOX68EM08BD48 - MOX68EML05SB7 - MOX68EML08GP32 - MOX68EML08SR12 - MOX68PA08XL36BFU -MOX-5-122003FIC供应：859-302、2N3415D26、NAS43DD3-77N、50398SMC50398、SPX2810AR25T、859303、2N3415D26Z、NAS43DD378、50399、SPX2810AR-2-5T、859-303、2N3415-D26Z、NAS43DD3-78、503990-1、SPX2810AR-2-5-T、85930-3、2N3415D26Z0、NAS43DD378FC、503990-2、SPX2810AR-25TR、859304、2N3415D26Z2N3415、NAS43DD3-78FC、503991、SPX2810AR-2-5TR 。

PIN二极管规格参数 SOT-23

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元器件明细资料
元器件名称型号及封装

标记
A A1 A2 b c D E E1 e e1 L L1 θ
公制尺寸(mm)
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950TYP
1.800
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ADS1271中文资料

proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could101001k10k100kFrequency(Hz)High−Resolution ModeShorted Input1,048,576Points101001k10k100kFrequency(Hz)PACKAGING INFORMATIONOrderable Device Status (1)Package Type Package Drawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL Peak Temp (3)ADS1271IPW ACTIVE TSSOP PW 1694None CU Level-2-240C-1YEAR ADS1271IPWRACTIVETSSOPPW162500NoneCULevel-2-240C-1YEAR(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan -May not be currently available -please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead (Pb-Free).Pb-Free (RoHS):TI's terms "Lead-Free"or "Pb-Free"mean semiconductor products that are compatible with the current RoHS requirements for all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysison incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annual basis.PACKAGE OPTION ADDENDUM27-Dec-2004Addendum-Page 1元器件交易网元器件交易网IMPORTANT NOTICETexas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,enhancements, improvements, and other changes to its products and services at any time and to discontinueany product or service without notice. Customers should obtain the latest relevant information before placingorders and should verify that such information is current and complete. All products are sold subject to TI’s termsand conditions of sale supplied at the time of order acknowledgment.TI warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. T esting and other quality control techniques are used to the extent TIdeems necessary to support this warranty. Except where mandated by government requirements, testing of allparameters of each product is not necessarily performed.TI assumes no liability for applications assistance or customer product design. Customers are responsible fortheir products and applications using TI components. T o minimize the risks associated with customer productsand applications, customers should provide adequate design and operating safeguards.TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right,copyright, mask work right, or other TI intellectual property right relating to any combination, machine, or processin which TI products or services are used. Information published by TI regarding third-party products or servicesdoes not constitute a license from TI to use such products or services or a warranty or endorsement thereof.Use of such information may require a license from a third party under the patents or other intellectual propertyof the third party, or a license from TI under the patents or other intellectual property of TI.Reproduction of information in TI data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproductionof this information with alteration is an unfair and deceptive business practice. TI is not responsible or liable forsuch altered documentation.Resale of TI products or services with statements different from or beyond the parameters stated by TI for thatproduct or service voids all express and any implied warranties for the associated TI product or service andis an unfair and deceptive business practice. TI is not responsible or liable for any such statements.Following are URLs where you can obtain information on other Texas Instruments products and applicationsolutions:Products ApplicationsAmplifiers Audio /audioData Converters Automotive /automotiveDSP Broadband /broadbandInterface Digital Control /digitalcontrolLogic Military /militaryPower Mgmt Optical Networking /opticalnetworkMicrocontrollers Security /securityTelephony /telephonyVideo & Imaging /videoWireless /wirelessMailing Address:Texas InstrumentsPost Office Box 655303 Dallas, Texas 75265Copyright 2004, Texas Instruments Incorporated。

SA23-11中文资料

YELLOW AND GREEN CATEGORIZED FOR COLOR .
lMECHANICALLY RUGGED. lSTANDARD : GRAY FACE, WHITE SEGMENT.
Package Dimensions & Internal Circuit Diagram
Notes:
HIGH EFFICIENCY RED (GaAsP/GaP) GREEN (GaP)
5600 3600
14000 9000
Common Anode, Rt. Hand Decimal Common Cathode, Rt. Hand Decimal
7-S23-2
元器件交易网
元器件交易网
Kingbright
Features
lLARGE SIZE. l2.3 INCH DIGIT HEIGHT. lLOW CURRENT OPERATION.
®
57mm (2.3INCH) SINGLE DIGIT NUMERIC DISPLAYS
SA23-11 SA23-12 SBA23-11 SC23-11 SC23-12 SBC23-11
5600
14000 Common Cathode, Rt. Hand Decimal Common Anode, Rt. Hand Decimal
GREEN (GaP)
3600
9000 Common Cathode, Rt. Hand Decimal Common Anode, Rt. Hand Decimal
Typ.
700 625 565 590 660 45 45 30 35 20 40 12 45 10 95 2.0 2.0 2.2 2.1 1.85 10

SOT-23中文资料

SOT-23 Surface Mount Plastic Package Package Outline, Tape, Reel and PackagingInformationAn ISO/TS16949 and ISO 9001 Certified Company––0.1All dimensions in mmł329.2–0.5 / 178 –0.514.47.9 10.9T R A I L E RF I X I NG T A P EL E A D E R9.2–0.5MAXł100.0–0.5 / 54.5 –0.5ł2.0–0.5ł20.2 MINDETAIL Xł13.0+0.50.2All dimensions in mm330 / 180 mm Antistatic Coated Plastic ReelNOTES:No. of Devices8mm Tape Size of Reel 330 mm (13")10,000 Pcs 8mm Tape Size of Reel 180 mm (7")3,000 PcsThe bandolier of 330 mm reel contains at least 10,000 devices.The bandolier of 180 mm reel contains at least 3,000 devices.No more than 0.5% missing devices / reel. 50 empty compartments for 330 mm reel. 15 empty compartments for 180 mm reel.Three consecutive empty places might be found provided this gap is followed by 6 consecutive devices.The carrier tape (leader) starts with at least 75 empty positions (equivalent to 330 mm). In order to fix the carrier tape a self adhesive tape of 20 to 50 mm is applied. At the end of the bandolier at least 40 empty positions (equivalent to 160 mm) are there.180or 3301.2.3.4.5.–0.01Tape Specification for SOT-23 Surface Mount DeviceSOT-23 Formed SMD PackageSOT-23 Package Reel InformationReel specifications for Packing (13"/7" reels)An ISO/TS16949 and ISO 9001 Certified CompanyCustomer NotesDisclaimerThe product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information.Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s).CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.CDIL is a registered Trademark ofContinental Device India LimitedC-120 Naraina Industrial Area, New Delhi 110 028, India.Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119email@ SOT-23 T&R3K/reel 10K/reel136 gm/3K pcs 415 gm/10K pcs3" x 7.5" x 7.5"9" x 9" x 9"13" x 13" x 0.5"12.0K 51.0K 10.0K17" x 15" x 13.5"19" x 19" x 19"17" x 15" x 13.5"192.0K 408.0K 300.0K12 kgs 28 kgs 16 kgsPACKAGENet Weight/Qty DetailsSTANDARD PACKINNER CARTON BOXQty OUTER CARTON BOXQty Gr Wt SizeSizePacking Detail。