IRFP450LC

––– ––– 74
ID = 14A
––– ––– 19 nC VDS = 400V
––– ––– 35
VGS = 10V, See Fig. 6 and 13
––– 14 –––
VDD = 250V
––– 49 ––– ns ID = 14A
––– 30 –––
RG =1
0.01 0.01
20µs PULSE WIDTH
TC = 150°C
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics, TC = 150oC
100
10 TJ = 150°C TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
ID , Drain-to-Source Current (A)
IRFP450LC
C, Capacitance (pF)
4000 3000 2000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + C gd
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 14
RD = 17Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH 6mm (0.25in.)
from package
––– 13 –––
and center of die contact
––– 2200 –––
VGS = 0V
––– 320 ––– pF VDS = 25V
3.0
ID = 14A
2.5
2.0
1.5
1.0
0.5
0.0
VGS = 10V A
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance Vs. Temperature
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
16 12
VDS = 400V VDS = 250V VDS = 100V
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Min. –––– –––– ––––
Typ. –––– 0.24 ––––
Max. 0.65 –––– 40
Units °C/W
Revision 0
RDS(ON) VGS(th)
Static Drain-to-Source On-Resistance Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
1
0.1
0.01 4
VDS = 50V
20µs PULSE WIDTH
A
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance (Normalized)
––– 28 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VDSS = 500V RDS(on) = 0.40Ω ID = 14A
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of HEXFETs offer the designer a new standard in power transistors for switching applications.
Max. 14 8.6 56 190 1.5 ±30 760 14 19 3.5
-55 to + 150
300 (1.6mm from case) 10 lbf•in (1.1N•m)
Units
A
W W/°C
V mJ A mJ V/ns
°C
Thermal Resistance
RθJC RθCS RθJA
HEXFET® Power MOSFET
PD - 9.1231
IRFP450LC
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
IRFP450LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
IRFP450LC
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
1
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
8.7 ––– ––– S VDS = 50V, ID = 8.4A
––– ––– 25 µA VDS = 500V, VGS = 0V
––– ––– 250
VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 100 nA
––– ––– -100
VGS = 20V VGS = -20V
showing the
A
integral reverse
––– ––– 56
p-n junction diode.
––– ––– 1.4 V TJ = 25°C, I S = 14A, VGS = 0V ––– 580 870 ns TJ = 25°C, I F = 14A ––– 5.1 7.7 µC di/dt = 100A/µs
Conditions
500 ––– ––– V VGS = 0V, ID = 250µA
––– 0.59 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.40 Ω VGS = 10V, ID = 8.4A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
VDD = 25V, starting T J = 25°C, L = 7.0mH RG = 25Ω, IAS = 14A. (See Figure 12)
ISD ≤ 14A, di/dt ≤ 130A/µs, V DD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
5.5V
10
5.0V
BOTTOM 4.5V
1
4.5V
0.1
4.5V
0.01 0.01
20µs PULSE WIDTH
TC = 25°C
A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics, TC = 25oC
Ciss
1000
0 1
C oss Crss
10
VDS , Drain-to-Source Voltage (V)
A
100
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
VGS , Gate-to-Source Voltage (V)
20
ID = 14A
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.