STRUCTURES, FABRICATION METHODS, AND DESIGN STRUCT
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
专利名称：STRUCTURES, FABRICATION METHODS,
AND DESIGN STRUCTURES FOR MULTIPLE
BIT FLASH MEMORY CELLS
发明人：Huilong Zhu,Zhijiong Luo
申请号：US12146500
申请日：20080626
公开号：US20090321808A1
公开日：
20091231
专利内容由知识产权出版社提供
专利附图：
摘要：A semiconductor structure, a fabrication method, and a design structure of the same. The semiconductor structure includes (i) a semiconductor substrate which includes
a top substrate surface perpendicular to the top substrate surface, (ii) a control gate electrode region and a first semiconductor body region on the semiconductor substrate, and (iii) a second semiconductor body region on the first semiconductor body region. The semiconductor structure further includes (i) a first gate dielectric region sandwiched between the first semiconductor body region and the control gate electrode region and (ii) a second gate dielectric region sandwiched between the second semiconductor body region and the control gate electrode region. The second semiconductor body region overlaps the first semiconductor body region in the reference direction. A first thickness of the first gate dielectric region is different from a second thickness of the second gate dielectric region.
申请人：Huilong Zhu,Zhijiong Luo
地址：Poughkeepsie NY US,Carmel NY US
国籍：US,US
更多信息请下载全文后查看。