_JMR_JMR24_02_S088429140003140Xa[1]
HP HP-UX 说明书

江民杀毒软件序列号

江民杀毒软件序列号KI005-89380-F84R2-61603-V8NAKKI005-89385-SKS54-22Z7B-GXM0SKI005-89388-HM4WB-2B9PV-JC59HKI005-89392-JKNTM-3CVLX-FKHDAKI005-89397-V8B8W-Q0V2R-LXWYFKG017-47078-XWWFA-YHR8Q-L50X4KG017-47079-DZ3X2-HNC7T-JMYMPKF011-06188-S32L1-88K7S-JYYZRKF011-01468-5C5MF-9HTRN-MKL7AKF011-06670-499XN-Z60B5-DQ3LJKF011-06671-B8BZD-Q8SDL-QV9ZFKF011-06672-SYV9Q-3P6AN-BKTJHKF011-06673-VT7NG-TFHQG-231VRKF011-06674-2Y35C-BMM7B-PYKNBKF011-06675-BL215-32XN7-RR8YWKF011-06676-56ZLR-XA1Y6-8FSYDKF011-06677-7Y6FY-PDAWL-BNFD7KF011-08036-S3VT5-V76YQ-WAW09KF011-08037-H9C12-3VJC3-78WFYSD004-61336-GTBAY-HJS7M-TA1F3KI005-89300-AL7JD-9VHD9-T5B4CKI005-89306-X8732-14N95-Q5N6KKI005-89308-2N7CK-8XLYS-01VKZKI005-89309-H362T-1TX4M-0SKN4KI005-89324-2C70M-X2JG8-5MRP6KI005-89326-X9SL9-Z0TB4-7QS9GKI005-89330-B93J8-PPW9M-8KK57KI005-89336-7NZMV-GYZAD-YA1ZTKI005-89338-J3NMG-VT388-CMX13KI005-89351-V84QT-8NGQ1-BTD5DKF011-06678-5M9CB-JQLL4-J8JCVKF011-06679-A9ZR4-6CW3S-GXM6XKF011-01469-7K957-SFRV3-B896GKF011-01472-1R5JW-8798Q-9AYYJKF011-06205-G3DQA-0TP46-3NA7AKF011-06207-J99VN-5MW2Y-3CN9YKF011-06208-197C5-LX2Z4-4KLQAKF011-06209-58ZFB-C7TNF-198DBKF011-06210-XWN01-Q5AFG-C1YYGKF011-06211-F92X6-7R77M-SGKA2KF011-06179-48WGD-VK8VD-SWF6CKI005-89361-JZS84-7JN99-F8MG8KI005-89363-FQN97-C6K72-W3VWVKI005-89371-1CDG1-K1N56-BJ453 KI005-89372-VYB1X-1JYHZ-NBAWA KI005-89380-F84R2-61603-V8NAK KI005-89385-SKS54-22Z7B-GXM0S KI005-89388-HM4WB-2B9PV-JC59H KI005-89392-JKNTM-3CVLX-FKHDA KI005-89397-V8B8W-Q0V2R-LXWYF KG017-47078-XWWFA-YHR8Q-L50X4 KG017-47079-DZ3X2-HNC7T-JMYMP KF011-06188-S32L1-88K7S-JYYZR KF011-01468-5C5MF-9HTRN-MKL7A KF011-06670-499XN-Z60B5-DQ3LJ KF011-06671-B8BZD-Q8SDL-QV9ZF KF011-06672-SYV9Q-3P6AN-BKTJH KF011-06673-VT7NG-TFHQG-231VR KF011-06674-2Y35C-BMM7B-PYKNB KF011-06675-BL215-32XN7-RR8YW KF011-06676-56ZLR-XA1Y6-8FSYD KF011-06677-7Y6FY-PDAWL-BNFD7 KF011-08036-S3VT5-V76YQ-WAW09 KF011-08037-H9C12-3VJC3-78WFY SD004-61336-GTBAY-HJS7M-TA1F3 KI005-89300-AL7JD-9VHD9-T5B4C KI005-89306-X8732-14N95-Q5N6K KI005-89308-2N7CK-8XLYS-01VKZKI005-89309-H362T-1TX4M-0SKN4 KI005-89324-2C70M-X2JG8-5MRP6 KI005-89326-X9SL9-Z0TB4-7QS9G KI005-89330-B93J8-PPW9M-8KK57 KI005-89336-7NZMV-GYZAD-YA1ZT KI005-89338-J3NMG-VT388-CMX13 KI005-89351-V84QT-8NGQ1-BTD5D KF011-06678-5M9CB-JQLL4-J8JCV KF011-06679-A9ZR4-6CW3S-GXM6X KF011-01469-7K957-SFRV3-B896G KF011-01472-1R5JW-8798Q-9AYYJ KF011-06205-G3DQA-0TP46-3NA7A KF011-06207-J99VN-5MW2Y-3CN9Y KF011-06208-197C5-LX2Z4-4KLQA KF011-06209-58ZFB-C7TNF-198DB KF011-06210-XWN01-Q5AFG-C1YYG KF011-06211-F92X6-7R77M-SGKA2 KF011-06179-48WGD-VK8VD-SWF6CKI005-89363-FQN97-C6K72-W3VWVKI005-89365-SYWN5-34PCT-Z8ZL2KI005-89371-1CDG1-K1N56-BJ453江民杀毒软件2010序列号(有效期:100天)序列号:KH024-97290-JMCXS-JP966-S3JA7序列号:KH024-96747-4Z7AW-XJR2S-Z4KAY序列号:KH024-96750-JYNN4-HKTMV-S2RX2序列号:KH024-96751-BN39Q-TP7NQ-VK1V7序列号:KH024-96754-VC2B6-7VHSP-H6752序列号:KH024-96755-AKSYN-RBJBC-RXSMZ 序列号:KH024-96746-ARVNH-A972P-0FMRR 序列号:KH024-95456-583YB-4DPL9-43WTT 序列号:KH024-95340-F36LW-5PR8R-SAS6K 序列号:KH024-95341-B3QAL-ZHVN1-M1M5P 序列号:KH024-95343-V9ND1-Q39CC-T94LS 序列号:KH024-95344-VTCSV-L5LK7-Z7VMT 江民杀毒软件2010序列号(有效期:100天)序列号:KH025-04119-SN33P-BVN6A-FXSBV 序列号:KH025-04138-4M42V-QN6LG-S5LQS 序列号:KH025-04150-ACQFG-8F5PH-0BXN1序列号:KH025-04177-VCVNA-VPM3J-RBWP0序列号:KH025-04193-AY5KH-Z7V7Y-2T9AH 序列号:KH025-04285-ARQCV-FLJSG-T69CB序列号:KH025-04306-2ZCBP-02FXV-1XD1X序列号:KH025-04308-F8NCL-3TMAX-FFBTR 序列号:KH025-04341-1MQ6L-4XKCT-HJZGH 序列号:KH025-04375-HR2CR-QF2S0-V0DBR 序列号:KH025-04420-56NKT-XSGC7-P6G43序列号:KH025-04439-X8SRX-BB9Q4-QXX9X 序列号:KH025-04476-70586-C2X1N-45Z95序列号:KH025-04493-FTS3J-SQ3VT-SA97B序列号:KH025-04579-4NBQH-S2GWD-T2DCN 序列号:KH025-04584-H8B2S-FRKD9-TA516序列号:KH025-04619-HT9ZF-ZMBZ2-619MB 序列号:KH025-04624-DL5C8-DC1W0-WBJYA 序列号:KH025-04639-PLQXR-7YPDC-BJW8R 序列号:KH025-04660-GY74X-JL5WK-1B57C 序列号:KH025-04686-DQZF5-8ATS3-SBK53序列号:KH025-04715-BNBQR-W8NVR-2WYD6序列号:KH025-04850-HYQ9M-SJA44-KXXL8序列号:KH025-04707-V95SK-57XQK-TVVJD序列号:KH025-05213-PLQ7L-DRQW5-6X1S3序列号:KH025-05218-B6ZK8-5XJ1J-L5KV8序列号:KH025-04524-4C61R-3TV8K-VQW4H。
中标麒麟neokylin信息查看

中标麒麟neokylin信息查看中标麒麟Neokylin系统版本信息:# nkvers############## NeoKylin Linux Version#################Release:NeoKylin Linux Advanced Server release V7Update6 (Chromium)Kernel:3.10.0-957.el7.x86_64Build:NeoKylin Linux Advanced Serverrelease V7Update6/(Chromium)-x86_64b4.lic/20190820################################################## uname -aLinux localhost.localdomain 3.10.0-957.el7.x86_64 #1 SMP Fri Jan 11 17:34:50 CST 2019 x86_64 x86_64 x86_64 GNU/Linux# uname -r3.10.0-957.el7.x86_64# cat /proc/versionLinux version 3.10.0-957.el7.x86_64 (mockbuild@kojibuilder-ve) (gcc version 4.8.5 20150623 (NeoKylin 4.8.5-36) (GCC) ) #1 SMP Fri Jan 11 17:34:50 CST 2019Openssh版本信息:# ssh -VOpenSSH_8.0p1, OpenSSL 1.0.2k-fips 26 Jan 2017JDK版本信息:# java --versionUnrecognized option: --versionError: Could not create the Java Virtual Machine.Error: A fatal exception has occurred. Program will exit.Glibc版本信息:# ldd --versionldd (GNU libc) 2.17Copyright (C) 2012 Free Software Foundation, Inc.This is free software; see the source for copying conditions. There is NOwarranty; not even for MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.由 Roland McGrath 和 Ulrich Drepper 编写。
DPtech DPX8000 系列深度业务交换网关用户配置手册(流量清洗业务板)

声
明
Copyright 2011 杭州迪普科技有限公司 版权所有,保留一切权利。 非经本公司书面许可,任何单位和个人不得擅自摘抄、复制本书内容的部分或全部,并 不得以任何形式传播。
由于产品版本升级或其他原因,本手册内容有可能变更。杭州迪普科技有限公司保留在 没有任何通知或者提示的情况下对本手册的内容进行修改的权利。本手册仅作为使用指导, 杭州迪普科技有限公司尽全力在本手册中提供准确的信息,但是杭州迪普科技有限公司并不 确保手册内容完全没有错误,本手册中的所有陈述、信息和建议也不构成任何明示或暗示的 担保。
iii
DPtech DPX8000 系列深度业务交换网关用户配置手册流量清洗分册 ----------------------------------------------------------------------------------------------------------------------------------------------------------------
图形目录
图 1-1 流量清洗组网示意图............................................................................................................................................................. 图 2-1 接口配置 ................................................................................................................................................................................... 图 2-2 IP 配置页面.............................................................................................................................................................................. 图 2-3 静态路由配置页面 ................................................................................................................................................................. 图 2-4 流量统计配置.......................................................................................................................................................................... 图 2-5 流量分析用户组修改页面 .................................................................................................................................................... 图 2-6 网络用户组管理页面............................................................................................................................................................. 图 2-7 配置 BGP 协议.......................................................................................................................................................................... 2 4 4 5000 系列深度业务交换网关用户配置手册流量清洗分册 ----------------------------------------------------------------------------------------------------------------------------------------------------------------
H3C交换机忘记密码的解决办法

9: Do not check the version of the software
a: Exit and reboot
Enter your choice(1-a): 6
Start up and ignore configuration, Are you sure?[Y/N]y
7: Enter debugging environment
8: Boot Rom Operation Menu
9: Do not check the version of the software
a: Exit and reboot
Enter your choice(1-a):
选择5后选择a重启路由器
新版本清除密码方法
AR路由器BOOTROM9.07清除CONSOLE密码:
Press Ctrl-B to enter Boot Menu
Please input Bootrom password:
Boot Menu:
1: Download application program with XMODEM
选3会清除配置,选4会忽略配置以出厂设置启动
启运完毕后将路由器配置DOWN下后更改密码后再导入
BOOTROM5.1
Press Ctrl-B to enter Boot Menu
Please input Bootrom password:
Boot Menu:
1: Download application program
中端路由器(262X系列,36XX系列,36XXE系列,263X系列,263XE系列)清除特权口令
重启路由器;
ibm产品号码对照表

IBM Network Attached Storage Model G01 5196-G01
IBM TotalStorage NAS Gateway 300 Model G02 5196-G02
IBM Label Only 3480 Data Cartridges Model 005 3499-005
IBM Standard 3480 Data Cartridges Model 006 3499-006
IBM 3480/3490 Conductive Cleaning Cartridges Model 007 3499-007
IBM TotalStorage Enterprise Storage Server Model 800 2105-800
IBM Enterprise Storage Server Model F20 2105-F20
IBM TotalStorage FAStT200 Storage Server Model 1RU 3542-1RU
McDATA "Core to Edge" Fibre Channel Products 2032
INRANGE FC/9000 Fibre Channel Director 2042
Cisco Systems Fabric Switch MDS 9216 and Director MDS 9509 2062
IBM 3590 Cleaning Cartridges Model 007 3599-007
IBM 3590 Cartridge Magazine Model 008 3599-008
ARM CoreSight MTB-M0+ Technical Reference Manual

CoreSight™ MTB-M0+Revision: r0p1 Technical Reference ManualCoreSight MTB-M0+Technical Reference ManualCopyright ©2012 ARM. All rights reserved.Release InformationThe following changes have been made to this book.Change historyDate Issue Confidentiality Change19 January 2012A Confidential First release for r0p014 December 2012B Non-Confidential First release for r0p1 Proprietary NoticeWords and logos marked with® or ™ are registered trademarks or trademarks of ARM® in the EU and other countries, except as otherwise stated below in this proprietary notice. Other brands and names mentioned herein may be the trademarks of their respective owners.Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or reproduced in any material form except with the prior written permission of the copyright holder.The product described in this document is subject to continuous developments and improvements. All particulars of the product and its use contained in this document are given by ARM in good faith. However, all warranties implied or expressed, including but not limited to implied warranties of merchantability, or fitness for purpose, are excluded.This document is intended only to assist the reader in the use of the product. ARM shall not be liable for any loss or damage arising from the use of any information in this document, or any error or omission in such information, or any incorrect use of the product.Where the term ARM is used it means “ARM or any of its subsidiaries as appropriate”.Confidentiality StatusThis document is Non-Confidential. The right to use, copy and disclose this document may be subject to license restrictions in accordance with the terms of the agreement entered into by ARM and the party that ARM delivered this document to.Product StatusThe information in this document is final, that is for a developed product.Web AddressContentsCoreSight MTB-M0+ Technical Reference ManualPrefaceAbout this book (vi)Feedback (ix)Chapter1Introduction1.1About the CoreSight MTB-M0+ ............................................................................... 1-21.2Compliance .............................................................................................................. 1-31.3Features ................................................................................................................... 1-41.4Interfaces ................................................................................................................. 1-51.5Configurable options ................................................................................................ 1-61.6Test features ............................................................................................................ 1-71.7Product documentation and design flow .................................................................. 1-81.8Product revisions ................................................................................................... 1-10Chapter2Functional description2.1About the functions .................................................................................................. 2-22.2Interfaces ................................................................................................................. 2-32.3Operation .................................................................................................................2-6Chapter3Programmers model3.1About the programmers model ................................................................................ 3-23.2Memory model ......................................................................................................... 3-33.3Register summary .................................................................................................... 3-43.4Register descriptions ............................................................................................... 3-8Appendix A Signal descriptionsA.1About the signal descriptions ................................................................................... A-2A.2Clock, reset, and control signals .............................................................................. A-3ContentsA.3AMBA AHB-Lite interface ........................................................................................ A-4A.4SRAM memory interface .......................................................................................... A-6A.5Execution trace interface ......................................................................................... A-7A.6External trace control interface ................................................................................ A-8A.7Debug authentication interface ................................................................................ A-9A.8Miscellaneous signals ............................................................................................ A-10 Appendix B Example Programming SequencesB.1Discovery .................................................................................................................B-2B.2Trace Enable Programming Sequence .................................................................... B-3B.3Trace Disable Programming Sequence ................................................................... B-4 Appendix C RevisionsPrefaceThis preface introduces the CoreSight MTB-M0+Technical Reference Manual. It contains thefollowing sections:•About this book on page vi.•Feedback on page ix.About this bookThis book is for the CoreSight Micro Trace Buffer for the Cortex™-M0+ processor, theCoreSight MTB-M0+ macrocell.Product revision statusThe r n p n identifier indicates the revision status of the product described in this book, where:r n Identifies the major revision of the product.p n Identifies the minor revision or modification status of the product.Intended audienceThis book is written for:•System designers, system integrators, and verification engineers.•Software developers who want to use the MTB.Using this bookThis book is organized into the following chapters:Chapter1 IntroductionRead this chapter for an introduction to the MTB and its features.Chapter2 Functional descriptionRead this chapter for a description of the functionality of the MTB.Chapter3 Programmers modelRead this chapter for a description of the MTB programmable registers andinformation for programming the MTB.Appendix A Signal descriptionsRead this for a description of the signals in the MTB.Appendix B Example Programming SequencesRead this for a description of some example programming sequences for theMTB.Appendix C RevisionsRead this for a description of the technical changes between released issues of thisbook.GlossaryThe ARM Glossary is a list of terms used in ARM documentation, together with definitions forthose terms. The ARM Glossary does not contain terms that are industry standard unless theARM meaning differs from the generally accepted meaning.See ARM Glossary, /help/topic/com.arm.doc.aeg0014-/index.html. ConventionsThis book uses the conventions that are described in:•Typographical conventions on page vii.•Timing diagrams on page vii.•Signals .Typographical conventionsThe following table describes the typographical conventions:Timing diagramsThe figure named Key to timing diagram conventions explains the components used in timing diagrams. Variations, when they occur, have clear labels. You must not assume any timing information that is not explicit in the diagrams.Shaded bus and signal areas are UNDEFINED , so the bus or signal can assume any value within the shaded area at that time. The actual level is unimportant and does not affect normaloperation.Key to timing diagram conventionsSignalsStylePurpose italicIntroduces special terminology, denotes cross-references, and citations.boldHighlights interface elements, such as menu names. Denotes signal names. Also used for terms in descriptive lists, where appropriate.monospaceDenotes text that you can enter at the keyboard, such as commands, file and program names, and source code.monospace Denotes a permitted abbreviation for a command or option. You can enter the underlined text instead of the fullcommand or option name.monospace italic Denotes arguments to monospace text where the argument is to be replaced by a specific value.monospace bold Denotes language keywords when used outside example code.<and>Encloses replaceable terms for assembler syntax where they appear in code or code fragments. For example:MRC p15, 0 <Rd>, <CRn>, <CRm>, <Opcode_2>SMALL CAPITALS Used in body text for a few terms that have specific technical meanings, that are defined in the ARM glossary .For example, IMPLEMENTATION DEFINED , IMPLEMENTATION SPECIFIC , UNKNOWN , and UNPREDICTABLE .The signal conventions are:Signal level The level of an asserted signal depends on whether the signal isactive-HIGH or active-LOW. Asserted means:•HIGH for active-HIGH signals.•LOW for active-LOW signals.Lower-case n At the start or end of a signal name denotes an active-LOW signal. Additional readingThis section lists publications by ARM and by third parties.See Infocenter, , for access to ARM documentation.ARM publicationsThis book contains information that is specific to this product. See the following documents forother relevant information:•CoreSight MTB-M0+ Implementation and Integration Manual (ARM DIT 0031).•Cortex-M0+ Technical Reference Manual (ARM DDI 0484).•AMBA® 3 AHB-Lite™ Protocol Specification (ARM IHI 0033).•CoreSight Architecture Specification (ARM IHI 0029).•ARM v6-M Architecture Reference Manual (ARM DDI 0419).FeedbackARM welcomes feedback on this product and its documentation.Feedback on this productIf you have any comments or suggestions about this product, contact your supplier and give:•The product name.•The product revision or version.•An explanation with as much information as you can provide. Include symptoms anddiagnostic procedures if appropriate.Feedback on contentIf you have comments on content then send an e-mail to errata@. Give:•The title.•The number, ARM DDI 0486B.•The page numbers to which your comments apply.• A concise explanation of your comments.ARM also welcomes general suggestions for additions and improvements.NoteA RM tests the PDF only in Adobe Acrobat and Acrobat Reader, and cannot guarantee thequality of the represented document when used with any other PDF reader.Chapter1IntroductionThis chapter introduces the CoreSight MTB-M0+ and its features. It contains the followingsections:•About the CoreSight MTB-M0+ on page1-2.•Compliance on page1-3.•Features on page1-4.•Interfaces on page1-5.•Configurable options on page1-6.•Test features on page1-7.•Product documentation and design flow on page1-8.•Product revisions on page1-10.1.1About the CoreSight MTB-M0+The CoreSight MTB-M0+ (MTB), provides a simple execution trace capability to theCortex-M0+ processor. The MTB is not intended to be competitive with an ARM EmbeddedTrace Macrocell (ETM™) or Program Trace Macrocell (PTM™) trace solution.1.2ComplianceThe MTB complies with, or implements, the specifications described in:•Advanced Microcontroller Bus Architecture.•Debug authentication interface.This TRM complements architecture reference manuals, architecture specifications, protocolspecifications, and relevant external standards. It does not duplicate information from thesesources.1.2.1Advanced Microcontroller Bus ArchitectureThis MTB complies with the AMBA 3 AHB-Lite protocol. See the AMBA 3 AHB-Lite Protocol.1.2.2Debug authentication interfaceThis MTB complies with the CoreSight authentication interface. See the CoreSight ArchitectureSpecification.1.3FeaturesThe MTB features and benefits are:•Provision of program flow tracing for the Cortex-M0+ processor.•Very small area.•Power reduction features.•MTB SRAM can be used for both trace and general purpose storage by the processor.•MTB SRAM size is configurable at implementation time.•The position and size of the trace buffer in SRAM is configurable by software.•External hardware can control trace start/stop.•CoreSight compliant.1.4InterfacesThe three main interfaces on the MTB are:•AHB-Lite slave interface.•Processor execution trace interface.•Synchronous SRAM master interface.1.4.1AHB-Lite slave interfaceThe MTB AHB-Lite interface provides access to two memory regions for:•The Special Function Registers (SFRs).•The SRAM.HSELSFR selects the address space for the Special Function Registers and HSELRAM selectsthe address space for the SRAM. See AMBA AHB-Lite interface on page A-4 for moreinformation.1.4.2Processor execution trace interfaceThe processor execution trace interface transfers the execution information from the processorto the MTB. See Execution trace interface on page A-7 for more information. The MTB formatsinformation, received from this interface, into trace packets and writes it into the MTB SRAM.1.4.3Synchronous SRAM master interfaceThe SRAM interface connects to the MTB SRAM, that is used to store the trace packetinformation formatted by the MTB.The MTB also operates as a simple AHB-Lite SRAM bridge. The processor has read and writeaccess to the entire MTBSRAM address space using the AHB-Lite interface. This enables theprocessor to access the trace packet information and also to store program and data informationin the SRAM.1.5Configurable optionsTable 1-1 shows the MTB configurable options available at implementation time.Table 1-1 MTB configurable optionsFeatureConfigurable option SRAM address width(AWIDTH)aa.Because the SRAM interface is 32-bits wide, the actualwidth of the SRAM address bus is AWIDTH-2. SeeTable A-3 on page A-6.5-32 er/Privileged supportPresent or absent.Reset all registers Present or absent.1.6Test featuresThe MTB has no test features, because the necessary DFT logic is inserted automatically, duringimplementation by your EDA tools.1.7Product documentation and design flowThis section describes the MTB books and how they relate to the design flow. It includes:•Documentation.•Design flow.See Additional reading on page viii for more information about the books described in thissection. For information on the relevant protocols, see Compliance on page1-3.1.7.1DocumentationThe MTB documentation is as follows:Technical Reference ManualThe Technical Reference Manual (TRM) describes the functionality and theeffects of functional options on the behavior of the MTB. It is required at allstages of the design flow. The choices made in the design flow can mean thatsome behavior described in the TRM is not relevant. If you are programming theMTB then contact:•The implementer to determine:—The build configuration of the implementation.—What integration, if any, was performed before implementing theMTB.•The integrator to determine the pin configuration of the device that you areusing.Integration and Implementation ManualThe Implementation and Integration Manual (IIM) describes:•The available build configuration options and related issues in selectingthem.•How to configure the Register Transfer Level (RTL) with the buildconfiguration options.•How to integrate the MTB into a SoC. This includes describing the pins thatthe integrator must tie off to configure the macrocell for the requiredintegration.•The processes to sign off the integration and implementation of the design.The IIM is a confidential book that is only available to licensees.1.7.2Design flowThe MTB is delivered as synthesizable RTL. Before it can be used in a product, it must gothrough the following processes:ImplementationThe implementer configures and synthesizes the RTL to produce a netlist.Integration The integrator connects the implemented design into a SoC. This includesconnecting it to a memory, processor and AHB-Lite bus.ProgrammingThis is the last process. The tools developer creates the software required toconfigure and initialize the MTB, and tests the required debug software.Each process:•Can be performed by a different party.•Can include implementation and integration choices affect the behavior and features of the MTB.Typically, a single design team integrates the MTB into a SoC before synthesizing the complete design. Alternatively, the team can synthesise the MTB on its own or partially integrated, to produce a macrocell that is then integrated, possibly by a separate team.The operation of the final device depends on:Build configurationThe implementer chooses the options that affect how the RTL source files arepre-processed. These options usually include or exclude logic that affects one ormore of the area, maximum frequency, and features of the resulting macrocell. Configuration inputsThe integrator configures some features of the MTB by tying inputs to specificvalues. These configurations affect the start-up behavior before any softwareconfiguration is made. They can also limit the options available to the software. Software configurationThe programmer configures the MTB by programming particular values intoregisters. This affects the behavior of the MTB.NoteT his manual refers to implementation-defined features that are applicable to build configuration options. Reference to a feature that is included means that the appropriate build and pin configuration options are selected. Reference to an enabled feature means one that has also been configured by software.1.8Product revisionsThis section describes the differences in functionality between product revisions:r0p0 First release.r0p1 ECOREVNUM is in the Peripheral ID3 register instead of the Peripheral ID2register.Chapter2Functional descriptionThis chapter describes the functionality of the MTB. It contains the following sections:•About the functions on page2-2.•Interfaces on page2-3.•Operation on page2-6.2.1About the functionsFigure2-1 shows the main interfaces on the MTB and how they are connected in a simpleCortex-M0+ based system.Figure2-1 MTB system diagram When enabled, the MTB records changes in program flow, reported by the Cortex-M0+processor over the execution trace interface. This information is stored as trace packets in theSRAM. An off-chip debugger can extract the trace information using the DAP to read the traceinformation from the SRAM, over the AHB-Lite interface. The debugger can then reconstructthe program flow from this information.The processor accesses the SRAM using the AHB-Lite interface. The MTB simultaneouslystores trace information into the SRAM, and gives the processor access to the SRAM. The MTBensures that trace write accesses have priority over processor accesses.The MTB does not:•Include any form of load/store data trace capability.•Include tracing of any other information.2.2InterfacesThis section describes the MTB interfaces. it contains:•Clock and reset interface on page2-4.•AHB-Lite interface on page2-4.•Execution trace interface on page2-4.•External trace enable interface on page2-5.•SRAM interface on page2-5.•Debug authentication interface on page2-5.Figure2-2 shows the interface details.Figure2-2 MTB interfaces2.2.1Clock and reset interfaceThe clock and reset interface consists of the HCLK, RESETn and IDLE signals. The IDLEsignal can be used to gate HCLK outside the MTB to save power. See Clock, reset, and controlsignals on page A-3 for additional information.2.2.2AHB-Lite interfaceThe following sections describe the AHB-Lite interface used by the MTB:•Wait state behavior.•Buffering.The MTB AHB-Lite interface provides access to two memory regions, one for the SpecialFunction Registers and the other for the SRAM. The memory regions are selected by theHSELSFR and HSELRAM inputs respectively. Only one of these select inputs can be HIGHat a time. If they are both HIGH at the same time the behavior is UNPREDICTABLE.SFR accesses must be word accesses. SRAM accesses can be either byte, halfword or wordaccesses.See the AMBA 3 AHB-Lite Protocol Specification for more information.Wait state behaviorSRAM accesses from the AHB-Lite interface occur with zero wait states when there is no tracedata being written to the SRAM.Trace packet write access to the SRAM take priority over access from the AHB-Lite interface.Therefore, one or more wait states can be inserted into the AHB-Lite accesses if traceinformation is simultaneously written to the SRAM.Special Function Register, SFR, accesses always occur with zero wait states.BufferingThe MTB AHB-Lite interface can buffer two address phases and one data write phase forSRAM accesses. This enables:•AHB-Lite accesses to the SRAM to occur at the same time as a trace packet is written tothe SRAM.•AHB-Lite read access to the SRAM to follow an AHB-Lite write access without insertingwait states.•AHB-Lite write access to be adapted to the SRAM interface protocol.2.2.3Execution trace interfaceThe execution trace interface consists of the IAXEN, IAEXSEQ, IAEX[30:0], ATOMIC, andEDBGRQ signals.Optionally, you can program the MTB to use the EDBGRQ output to request the processor toenter the halt state when the trace buffer is full. This avoids loss of trace information. See FLOWRegister on page3-11.2.2.4External trace enable interfaceThis interface enables external control over when tracing starts and stops. It consists of theTSTART and TSTOP signals. See Trace start and stop on page2-7 and External trace controlinterface on page A-8.2.2.5SRAM interfaceThis is a synchronous interface to the SRAM. The MTB uses this interface for trace andAHB-Lite accesses to the SRAM. See MTB execution trace packet format on page2-6 andSRAM memory interface on page A-6.2.2.6Debug authentication interfaceThis interface permits trace to be disabled for security purposes. See also Debug authenticationinterface on page A-9 for signal information.Table2-1 shows a summary of the authentication behavior.Table2-1 Debug authentication interface behaviorDBGEN NIDEN Execution traceenabledSRAM accessallowed from AHBSFR accessallowed from AHBEDBGRQ00No Yes Yes001Yes Yes Yes01X Yes Yes Yes MASTER.HALTREQ2.3OperationThis section describes the operation of the MTB. It contains the following sections:•MTB execution trace packet format.•Trace start and stop on page2-7.2.3.1MTB execution trace packet formatThe execution trace packet consists of a pair of 32-bit words that the MTB generates when itdetects the processor PC value changes non-sequentially. A non-sequential PC change can occurduring branch instructions or during exception entry.NoteT he processor can cause a trace packet to be generated for any instruction.Figure2-3 shows the signal combination that detects a non-sequential PC change.Figure2-3 MTB non-sequential PC diagram Figure2-4 shows how the execution trace information is stored in memory as a sequence ofpackets.Figure2-4 MTB execution trace storage format The first, lower addressed, word contains the source of the branch, the address it branched from.The value stored only records bits[31:1] of the source address, because Thumb instructions areat least halfword aligned. The least significant bit of the value is the A-bit. The A-bit indicatesthe atomic state of the processor at the time of the branch, and can differentiate whether thebranch originated from an instruction in a program, an exception, or a PC update in Debug state.When it is zero the branch originated from an instruction, when it is one the branch originatedfrom an exception or PC update in Debug state. This word is always stored at an even wordlocation.The second, higher addressed word contains the destination of the branch, the address itbranched to. The value stored only records bits[31:1] of the branch address. The least significantbit of the value is the S-bit. The S-bit indicates where the trace started. An S-bit value of 1indicates where the first packet after the trace started and a value of 0 is used for other packets.Because it is possible to start and stop tracing multiple times in a trace session, the memorymight contain several packets with the S-bit set to 1. This word is always stored in the nexthigher word in memory, an odd word address.When the A-bit is set to 1, the source address field contains the architecturally-preferred returnaddress for the exception. For example, if an exception was caused by an SVC instruction, thenthe source address field contains the address of the following instruction. This is different fromthe case where the A-bit is set to 0. In this case, the source address contains the address of thebranch instruction.For an exception return operation, two packets are generated:•The first packet has the:—Source address field set to the address of the instruction that causes the exceptionreturn, BX or POP.—Destination address field set to bits[31:1] of the EXC_RETURN value. See theARM v6-M Architecture Reference Manual.—The A-bit set to 0.•The second packet has the:—Source address field set to bits[31:1] of the EXC_RETURN value.—Destination address field set to the address of the instruction where executioncommences.—A-bit set to 1.2.3.2Trace start and stopTracing is enabled when the MASTER.EN bit in the Master Trace Control Register is 1. Thereare various ways to set the bit to 1 to start tracing, or to 0 to stop tracing. See MASTER Registeron page3-9.You can control trace externally using the TSTART and TSTOP signals or using the MasterTrace Control Register, see TSTART and TSTOP signals on page2-8. You can program the MTBto stop tracing automatically when the memory fills to a specified watermark level or you canstart or stop tracing by writing directly to the MASTER.EN bit, see MASTER Register onpage3-9. If you do not use the watermark mechanism, and the trace buffer overflows, then thebuffer wraps around overwriting previous trace packets.If more than one source attempts to modify the MASTER.EN bit value in the same cycle thenthe following priority order is used to determine which value is accepted. The lowest number isthe higher priority.1.Watermark stop.2.Software write to the MASTER.EN bit.3.TSTART and TSTOP signals.Note•If you use the watermark auto stop feature to stop trace, you cannot restart trace untilsoftware clears the watermark auto stop. You can achieve this in one of the followingways:—By setting the POSITION.POINTER field to point to the beginning of the tracebuffer. See POSITION Register on page3-8.—By setting the FLOW.AUTOSTOP bit to 0. See FLOW Register on page3-11.。
DNS反向解析问题引起邮件被拒绝

DNS反向解析问题引起邮件被拒绝发布时间:2010-5-10 13:39:34 分类:梭子鱼新闻已经阅读207次作者:Lee什么是反向DNS解析(PTR)?可逆DNS(RDNS)就是反向解析,就是把IP解析成域名。
相对应的,DNS是正向解析,把域名解析成IP。
可逆DNS(RDNS)的原理和DNS解析是完全相同的。
DNS反向解析就是将IP反向查询为域名,在相关IP授权DNS服务器上增加您的IP地址的PTR记录。
反向解析的意义是这个IP地址的网络身份是被认可的,是合法的。
可逆DNS(RDNS)的一个应用是作为垃圾邮件过滤器.它是这样工作的:垃圾邮件制造者一般会使用与域名不合的无效IP地址,即不和域名匹配的IP地址.可逆DNS查找程序把引入信息的IP地址输入一个DNS数据库.如果没有找到和IP地址匹配的有效域名,服务器就认为该EMAIL是垃圾邮件。
如AOL(美国在线)要求必须实施IP反解的邮件服务器才能向AOL/AIM邮箱发送邮件。
何种IP才能做反向解析?国内的IP只有部分才能申请反向解析,这部分IP为电信运营商认可的固定IP地址,动态IP池中的不能申请。
一般反向解析是和IP地址分配有联系的,所以ISP(接入服务商)直接申请反向解析的授权很难得到。
而电信运营商在这方面就具备天然优势,通常这个授权都会直接授予本地的电信运营商,然后再由电信运营商授予各个使用此IP地址的ISP(当然,这个ISP至少要完全占有整个C类地址的使用权,否则不会得到授权),大部分情况,电信运营商自己的DNS来提供相应IP地址的反向解析服务。
DNS反向解析检测和报错信息?检测方式如下:C:\Documents and Settings\user>nslookup –qt=ptr 124.205.118.205Server: Address: 124.205.118.205说明这个IP的反解析就是成功了。
返回信息如下C:\Documents and Settings\user>nslookup –qt=ptr 124.205.118.205*** Can't find server name for address 211.150.100.33: Non-existent domainServer: UnKnownAddress: 124.205.118.205说明这个IP的反解析没有作。
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Journal of Materials Research/JMRAdditional services for Journal of Materials Research:Email alerts: Click hereSubscriptions: Click hereCommercial reprints: Click hereTerms of use : Click hereGreatly enhanced broadband nearinfrared emission due to energy transfer from Cr3+ to Ni2+ in transparent magnesium aluminosilicate glass ceramicsJin Luo, Shifeng Zhou, Botao Wu, Hucheng Yang, Song Ye, Bin Zhu and Jianrong QiuJournal of Materials Research / Volume 24 / Issue 02 / 2009, pp 310 315DOI: 10.1557/JMR.2009.0068Link to this article: /abstract_S088429140003140XHow to cite this article:Jin Luo, Shifeng Zhou, Botao Wu, Hucheng Yang, Song Ye, Bin Zhu and Jianrong Qiu (2009). Greatly enhanced broadband nearinfrared emission due to energy transfer from Cr3+ to Ni2+ in transparent magnesium aluminosilicate glass ceramics. Journal of Materials Research,24, pp 310315 doi:10.1557/JMR.2009.0068Request Permissions : Click hereDownloaded from /JMR, IP address: 58.155.210.6 on 11 Sep 2012ARTICLESGreatly enhanced broadband near-infrared emission due toenergy transfer from Cr3+to Ni2+in transparent magnesiumaluminosilicate glass ceramicsJin Luo and Shifeng ZhouState Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou310027,People’s Republic of ChinaBotao WuState Key Laboratory of High Field Laser Physics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai201800,People’s Republic of ChinaHucheng Yang,Song Ye,and Bin ZhuState Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou310027,People’s Republic of ChinaJianrong Qiu a)State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou310027,People’s Republic ofChina;and State Key Laboratory of High Field Laser Physics,Shanghai Institute of Optics and FineMechanics,Chinese Academy of Sciences,Shanghai201800,People’s Republic of China(Received16March2008;accepted11July2008)Cr3+/Ni2+co-doped optically transparent magnesium aluminosilicate glass-ceramicscontaining MgAl2O4nanocrystals have been prepared by heat-treatment.Greatlyenhanced broadband near-infrared emission centered at1216nm in Cr3+/Ni2+co-dopedglass ceramics is observed when compared with the Ni2+single-doped glass ceramicsunder532nm excitation.The observed enhancement of infrared emission is attributed tothe energy transfer from Cr3+to Ni2+ions in the nanocrystalline phase,which leads to the emission due to3T2(3F)!3A2(3F)transition of octahedral Ni2+ions.I.INTRODUCTIONIn recent years,transparent glass ceramics,which can be prepared by precipitating nanocrystalline phase from a glass matrix through suitable heat treatment,have be-come very attractive materials for the photonic applica-tions.1The glass-ceramics are easily fabricated like glass and have crystal’s advantage of high optical activity. With the rapid development of optical communication, the limited bandwidth of traditional rare-earth-ion-doped fiber amplifiers will not meet the need of large-capacity information transmission because of the intrinsic electron transition characteristics of rare-earth ions.In comp-arison,transition metal ions may potentially show broadband luminescence,and it has been reported that Ni2+-doped MgO single crystal shows broadband near-infrared emission.Unfortunately,difficult fabrication restricts its practical applications.2Glass can be easily fabricated into the form of fiber.However,Ni2+ions show weak or even no luminescence in glasses due to the strong nonradiative relaxation.Recently,research was carried out to prepare Ni2+-doped transparent glass ceramics.In glass ceramics,Ni2+ions show broadband near-infrared luminescence with long fluorescent life-time when incorporated into the crystal phase.Therefore, they have potential applications as gain materials for broadband optical amplifiers and tunable lasers.3–6Cr3+-ion-doped materials have broad and strong absorp-tion in the visible region,and their absorption spectra overlap with the emission spectra of a Xe flashlamp and solar light,7–13so they are excellent gain matrixes as lamp-pumped lasers and luminescent solar concentrators.More-over,visible and near-infrared emissions of Cr3+overlap well with the absorption of rare-earth ions.They have been widely used as sensitizers for rare-earth ion-doped(e.g., Nd3+and Tm3+)materials.13–20It has been demonstrated that the pumping and lasing efficiency were effectively improved by means of co-doping of Cr3+for rare-earth-ion-doped crystals.15–17However,there are few re-ports about enhanced luminescence phenomenon in Cr3+/ Ni2+co-doped materials,especially in glass-ceramics. Magnesium aluminosilicate glass-ceramics have been extensively studied due to their good mechanical properties and chemical durability.The composition of the glass matrix,addition of nucleating agents,and heat-treatment conditions determine crystalline phases and microstructures of glass-ceramics.21,22Magnesiuma)Address all correspondence to this author.e-mail:qjr@DOI:10.1557/JMR.2009.0068J.Mater.Res.,Vol.24,No.2,Feb2009©2009Materials Research Society 310aluminosilicate glass-ceramics containing MgAl2O4 nanocrystals have also been studied as a possible laser medium for tunable lasers.23In this research,we prepared Cr3+/Ni2+co-doped transparent magnesium aluminosilicate glass ceramics. The luminescent properties of the glass-ceramics were investigated,and the results demonstrated that co-doping of Cr3+enhanced the infrared luminescence of Ni2+ obviously.It is expected that the co-doping of Cr3+may be an effective way to improve the luminescence perfor-mance of Ni2+-doped materials.II.EXPERIMENTALGlass-ceramics were prepared by the heat-treatment of glassy materials with a composition of48.7SiO2–19.4Al2O3–19.5MgO–3.8ZrO2–8.6TiO2–0.1Cr2O3–0.1 NiO(mol%;MZTAS).For comparison,single NiO as well as Cr2O3-doped glasses and glass-ceramics with the same concentration were also prepared.A30g stoichio-metric mixture of SiO2,Al2O3,MgO,ZrO2,TiO2,Cr2O3, and NiO was mixed thoroughly in an agate and was melted in an alumina crucible at1560 C for1h.The melt was cast into a stainless steel slab rapidly and then annealed at650 C for4h.The glass was heat treated inair to obtain glass-ceramics,and all the samples were polished to be about2.5mm thick.Thermal properties were measured by differential thermal analysis(DTA)at a heating rate of10 C/min under N2atmosphere.X-ray diffraction(XRD)measure-ments were carried out using Cu/K a1(l=1.54056A˚)as the radiation to identify crystallite phases.The micro-structures of the samples were observed using a JEM-2010high-resolution transmission electron microscope (HRTEM).Optical absorption spectra were recorded by a double-beam spectrophotometer(JASCO FP-6500, Tokyo,Japan).The infrared emission spectra were measured using a ZOLIX SBP300spectrophotometer with InGaAs detector under the excitation of532-nm laser.Fluorescence lifetime decays were measured in an Edinburgh Instrument Ltd.spectrometer(Beijing,China) (model FL920,Edinburgh,UK).The data were obtained using the single photon counting technique equipped with a Ge detector with liquid nitrogen cooling.The sample excitation source was a m F900pulsed Xenon microsecond flashlamp(repetition rates10Hz).III.RESULTS AND DISCUSSIONA.Sample preparationThe inset of Fig.1(a)shows the DTA result of the as-made glass.Glass transition(T g)and crystallization(T x) occur around780and932 C,respectively.Transparent glass-ceramics were obtained by controlling the crystal-lization process of as-made glasses through a two-stage thermal treatment with the nucleation process held at 790 C and the crystal growth held at950 C.Figure1 (a)presents the XRD patterns of the MZTAS glass and MZTAS glass-ceramic(GC).No apparent diffraction patterns can be observed for the glass sample,but a halo characteristic of amorphous phase can be seen around 25 .After heat treatment,several sharp diffraction peaks attributed to the crystal phase of MgAl2O4and ZrTiO4 can be observed.The strongest diffraction peaks around 2y=30.6 and36.8 corresponding to the respective diffraction peaks of ZrTiO4and MgAl2O4were selected to calculate the size of precipitations using the Scher-rer’s equation.The sizes of ZrTiO4and MgAl2O4crys-talline phases are about6.6and4.4nm,respectively. The crystallinity estimated by the ratio of integrated area of peaks to the total area of the XRD pattern is about 52.8%.The photographs of single Cr3+-doped,Ni2+-doped,and co-doped glasses and GCs are shown in Fig.1(b).The color of glasses changed obviously by heat treatment.For single Ni2+-doped and Cr3+-doped glasses,the colors change from yellow to gray and from green to yellowish brown,respectively.Differently,for Cr3+/Ni2+co-doped glass,it varies from deep green to gray yellow.It is noted that all of the samples are trans-parent after heat-treatment.Figures1(c)and1(d)present the HRTEM images of the MZTAS GC,and the HRTEM images reveal that the nanocrystals distribute homogeneously among the glass matrix and the size of nanocrystals is between5and10nm,which agrees well with the estimation based on XRDpatterns.FIG.1.(a)XRD patterns of as-made MZTAS glass and MZTAS GC, the inset shows the DTA results of the as-made MZTAS glass;(b) photographs of single Cr3+-doped,Ni2+-doped,and co-doped glasses and GCs;(c,d)HRTEM images of MZTAS GC.B.Optical absorption propertiesOptical absorption spectra of single Cr 3+,Ni 2+-doped and co-doped glasses and GCs are shown in Fig.2.It is obvious that the absorption positions for the Cr 3+-doped glass and GC in Fig.2(a)are different from each other.Cr 3+occupies more preferentially the octahedral site than the tetrahedral site in glasses and crystals because three 3d electrons of Cr 3+can take a lower t ag level in the octahedral site.7Two broad bands are observed in the spectrum of Cr 3+-doped glass sample:the low-energy one (at about 650nm)can be assigned to the 4A 2g (F)!4T 2g (F)spin-allowed transition,and the high-energy one (at about 443nm)is related to the 4A 2g (F)!4T 1g (F)transition of octahedral Cr 3+.8For Cr 3+-doped GC,two broad bands are also observed in the spectrum,and they can be assigned to the same origin as Cr 3+-doped glass.However,it is necessary to point out that these absorption bands show a slight shift toward high energy in the Cr 3+-doped GC.The blue shift of the absorption can be understood if the octahedral sites in the crystal lattice are substituted by Cr 3+ions.After incorporation into the crystalline phase,the crystal field strength may be expected to become large,and the change can be viewed from the Dq parameter.The Dq value was calculated.7The Dq value of Cr 3+ions changes from 1538cm À1for Cr 3+-doped glass to 1754cm À1for Cr 3+-doped GC.The magnitude of Dq is a measure of the interaction of the 3d -electrons with the rest of the lattice,and the main contribution to the inter-action arises from the nearest neighbors.5Thus,the weaker crystal field in the glass around Cr 3+can be considered to be caused by the more open structure.An increase of crystal field strength leads to an increase of the energy of the levels 4T 2g (F)and 4T 1g (F)and a blue shift of the absorption bands due to the transitions from 4A 2g (F)ground state to 4T 2g (F)and 4T 1g (F)excited states.9The absorption spectrum of single Ni 2+-doped glass resembles the absorption of Ni 2+in tetrahedral 4-fold and trigonal bypyramid coordinated sites in sili-cate glasses.In contrast,the absorption spectrum of the Ni 2+-doped GC is similar to the absorption spectra of Ni 2+ions in the octahedral sites in the other materials.3,5,6The broad absorption bands at around 630and 1020nm in Ni 2+-doped GC can be attributed to spin-allowed tran-sitions from 3A 2g (3F)ground state to the 3T 1g (3F)and 3T 2g (3F)excited state of Ni 2+in octahedral sites,respec-tively.3–6It is supposed that Ni 2+substituted the octahe-dral positions in the crystalline phase.The absorption spectrum of Cr 3+/Ni 2+co-doped glass and GC in Fig.2(c)superposes the corresponding absorption spectra of the Cr 3+and Ni 2+single-doped glasses and GCs,respec-tively.Therefore,it is reasonable to assume that at least some Cr 3+and Ni 2+are incorporated into the crystalline phase in Cr 3+/Ni 2+co-doped GC.20It is known the MgAl 2O 4crystals are of the spinel structure withspace group O h 7(Fd 3m ),and Al3+ions (r Al3+=0.535A ˚)occupy octahedral sites banded to six oxygens at thesame distance,1.928A˚,with D 3d point symmetry.10,24In addition,ZrTiO 4has the a –PbO 2structure with space group D 142h (Pbcn ),and it is composed of hexagonally close-packed oxygen layers and small-sized cations(r Ti4+=0.605A˚and r Zr4+=0.72A ˚)that randomly occupy 50%of the available distorted octahedral sites.25Each metal ion of ZrTiO 4is bonded to six oxygens at anaverage distance of 2.04A˚:four at 1.94A ˚and two more at 2.23A˚.26According to Grimes,27large impurity ions are generally held at the high-symmetry site,while smaller ions are able to move closer to the positions of minimum energy.Moreover,the valence state of Cr 3+and Ni 2+are so different from that of Zr 4+and Ti 4+,and nanocrystals will be not stable when Zr 4+and Ti 4+are substituted for Cr 3+and Ni 2+.Therefore,it seems to be reasonable toconsider that the doped Cr 3+(r Cr3+=0.69A˚)24and Ni 2+(r Ni2+=0.69A˚)5ions are both incorporated into MgAl 2O 4spinel nanocrystals.4,5,10,24C.Fluorescence propertiesThe near-infrared emission spectra of single Cr 3+-doped,Ni 2+-doped,and co-doped glasses and GCs are shown in Fig.3.The weak emission of single Ni 2+-doped GC peaked around 1200nm under the excitation with 532nm could be attributed to the transition from the 3T 2g (3F)excited state to the 3A 2g (3F)ground state of Ni 2+ions in octahedral sites.3–6,20An intensely broad emission band centered at 1216nm in the Cr 3+/Ni 2+co-doped GC was also due to the 3T 2g (3F)!3A 2g (3F)FIG.2.Optical absorption spectra of (a)Cr 3+-doped,(b)Ni 2+-doped,and (c)Cr 3+/Ni 2+-doped glasses (dotted line)and GCs (solid line).transition.In contrast,the single Cr 3+-doped GC and Cr 3+/Ni 2+co-doped glass do not show any emission at this band.The near-infrared emission in single Cr 3+-doped and Cr 3+/Ni 2+co-doped glass are centered at about 950nm,and they can be assigned to the 4T 2g (F)!4A 2g (F)transition of Cr 3+in octahedral sites.8The absorption peaks around 880–1300nm of Ni 2+in glass result in the decrease of near-infrared emission intensity of Cr 3+in Cr 3+/Ni 2+co-doped glass compared with that of Cr 3+in Cr 3+-doped glass.This emission band shifts to higher energies (at about 914nm)in Cr 3+-doped and Cr 3+/Ni 2+co-doped GCs,and the emission intensity of these samples is greatly increased compared with those of Cr 3+-doped and Cr 3+/Ni 2+co-doped glasses,which further proves that the Cr 3+ions are incorporated into high-field sites.In other words,the Cr 3+ions substitute the octahe-dral sites in the crystalline phase,which results in the increase of the crystal field and decrease of nonradiative relaxation.7The emission shape originating from the 4T 2g (F)!4A 2g (F)transition of Cr 3+ions is not affected due to Ni 2+co-doping in Cr 3+/Ni 2+co-doped GC,while a decrease of the emission intensity of Cr 3+ions can also be observed in Cr 3+/Ni 2+co-doped GC compared with Cr 3+single-doped GC.These phenomenon could be attributed to the Cr 3+!Ni 2+energy transfer,which can also explain the great enhancement of near-infrared emission of Ni 2+ions centered at 1216nm in Cr 3+/Ni 2+GC.20It is observed that the excitation wave length of532nm locates in the front-end of 3T 1(3F)absorption band of Ni 2+in GC [Fig.2(b)],and only weak infrared emission occurs under the excitation of 532nm for sin-gle Ni 2+-doped GC.The broad-band emission from the 4T 2g (F)excited state to 4A 2g (F)ground state of the Cr 3+ions overlaps the strong absorption of Ni 2+in the 880–1300nm region due to spin-allowed transitions from 3A 2g (3F)ground state to the 3T 2g (3F)excited state of Ni 2+.Thus,after the Cr 3+ions are excited,energy trans-fer occurs between Cr 3+and Ni 2+,and the energy transfer from Cr 3+to Ni 2+ions associated with the vibro-nically assisted 4T 2g (F)!4A 2g (F)transition of Cr 3+ions can be confirmed by the fluorescence decay curves at 914nm of Cr 3+in Cr 3+-doped and Cr 3+/Ni 2+co-doped GC,which are presented in the inset of Fig.3.The fluorescence decay curves measured at 914nm exhibit non-exponential decay.For practical purposes we use the “average lifetime”t 0defined by equation t 0=R tI (t )d t /R I (t )d t .13A decrease from the Cr 3+average lifetime of 51m s for Cr 3+-doped GC to 37m s for Cr 3+/Ni 2+co-doped GC was observedThe fluorescence spectra of Cr 3+single-doped,Cr 3+/Ni 2+co-doped glasses,and GCs in visible region are shown in Fig.4.No emission was observed in this region for single Cr 3+-doped and Cr 3+/Ni 2+co-doped glasses.After heat treatment,an emission can be seen for single Cr 3+-doped and Cr 3+/Ni 2+co-doped GCs.The intense fluorescence peak centered at 686nm is attributed to the zero-phonon line of the 2E !4A 2transition for the Cr 3+in a “strong”octahedral field.7The broad tail in the long wave length in the fluorescence spectra of the Cr 3+-doped GC,as well as the Cr 3+/Ni 2+co-doped GC,is attributed to 4T 2g (F)!4A 2g (F)vibronic transition.The crystal-like 686-nm peak indicates that themajorFIG.3.Near-infrared emission spectra of (a)single Cr 3+-doped GC,(b)Cr 3+/Ni 2+co-doped GC,(c)single Cr 3+-doped glass,(d)Cr 3+/Ni 2+co-doped glass,and (e)single Ni 2+-doped GC under 532nm excita-tion.The inset shows the experimental time decay profiles of the Cr 3+luminescence at 914nm obtained from single Cr 3+-doped and Cr 3+/Ni 2+co-dopedGCs.FIG.4.Fluorescence spectra of single Cr 3+-doped and Cr 3+/Ni 2+co-doped glass and GCs with 532nm excitation;the inset shows the experimental time decay profiles of the Cr 3+luminescence at 686nm obtained from single Cr 3+-doped and Cr 3+/Ni 2+co-doped GCs.fraction of Cr 3+ions in the glass matrix is located in strong crystal field octahedral sites,which are available only within the nanocrystalline phase nucleated in the host glass matrix of the composite material.It should be noted that there is a decrease of emission intensity for Cr 3+/Ni 2+co-doped GC in contrast with that of Cr 3+-doped GC.The decrease of the emission intensity for Cr 3+/Ni 2+co-doped GC in this region is assigned to the energy transfer from Cr 3+to Ni 2+ions.The inset of Fig.4shows the fluorescence decay curves at 686nm of Cr 3+in Cr 3+-doped and Cr 3+/Ni 2+co-doped GCs.A decrease in the Cr 3+average fluorescence lifetime of 1.67ms for Cr 3+-doped GC to 0.77ms for Cr 3+/Ni 2+co-doped GC was observed.The decrease of lifetime of 686nm emissions for Cr 3+/Ni 2+co-doped GC directly indicates the energy transfer between Cr 3+and Ni 2+.The fact that the lifetime of visible emission and in-frared emission of Cr 3+in Cr 3+/Ni 2+co-doped GC decre-ased compared with those in Cr 3+singly doped GC indirectly indicates that the energy transfer from Cr 3+to Ni 2+should be nonradiative because a decrease in the sensitizer’s emission fluorescence lifetime is a distin-guishing feature related to nonradiative energy trans-fer.20Figure 5illuminates the schematic mechanism of the energy transfer from Cr 3+to Ni 2+.Cr 3+ions are excited into 4T 2(F)excited state under the 532nm exci-tation.Nonradiative energy transfer occurs from the 4T 2(F)excited state of Cr 3+to the 3T 2(3F)or 3T 1(3F)excited state of Ni 2+,which stimulates the broadband near-infrared emission of octahedral Ni 2+.However,the exact energy transfer mechanism still needs to be studied further.The nonradiative energy-transfer efficiency Z can be evaluated by calculating the shortening of the 686nm luminescence decay time of Cr 3+in the Cr 3+/Ni 2+co-doped GC with respect to the luminescencedecay time in Cr 3+singly doped one using the following formula:¼1Àt 0Cr Ni =t 0Cr;where the t 0Cr–Ni and t 0Cr are average fluorescence life-time of Cr 3+emission in the Cr 3+/Ni 2+co-doped and Cr 3+singly doped GC,respectively.17,18The calculated Z is about 53%.IV.CONCLUSIONSSingle Cr 3+-doped,Ni 2+-doped,and co-doped MgAl 2O 4GCs were prepared by heat treatment.The broadband infrared 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