ISA1235AC1TR中文资料
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FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1235AC1 ISA1602AM1 is super mini package resin sealed silicon PNP epitaxial type transistor.
These are designed for low frequency voltage amplify application .
FEATURE
・Excellent linearity of DC forward current gain.
・Small collector to emitter saturation voltage VCE(sat)=-0.3Vmax
APPLICATION
For small type machine low frequency voltage amplify application.
MAXIMUM RATINGS（Ta=25℃）
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Ratings
Symbol Parameter
ISA1235AC1ISA1602AM1
UNIT ＶＣＢＯ Collector to Base voltage -60 V
ＶＥＢＯ Collector to Emitter voltage -6 V ＶＣＥＯ Emitter to Base voltage -50 V Ｉ Ｃ Collector current -200 mA ＰＣ Collector dissipation 200 mW Ｔｊ Junction temperature +150 ℃ Ｔｓｔｇ
Storage temperature -55～+150
℃
Limits Symbol
Parameter
Test conditions Min Ave Max UNIT Ｖ（ＢＲ）ＣＥＯ Collector to Emitter Breakdown voltage I C =-100μA，R BE =∞ -50
V Ｉ ＣＢＯ Collector cut off current V CB =-60V，I E =0 -0.1 μA Ｉ EＢＯ Emitter cut off current
V EB =-6V，I C =0 -0.1 μA ｈＦＥ*
DC forward current gain V CE =-6V，I C =-1mA 150 500 － ｈＦＥ DC forward current gain
V CE =-6V，I C =-0.1mA 90 － ＶＣＥ（ｓａｔ） Collector to Emitter saturation voltage I C =-100mA，I B =-10mA -0.3 V ｆＴ Gain bandwidth product V CE =-6V，I E =10mA 200 MHz Cob Collector output capacitance V CB =-6V，I E =0,f=1MHz 4.0 pF NF
Noise Figure
V CE =-6V，I E =0.3mA， f=100Hz，RG=10kΩ
20
dB E F ｈFE 150～300
250～500
ISAHAYA ELECTRONICS CORPORATION
*：It shows hFE classification in below table.
ISAHAYA ELECTRONICS CORPORATION
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
100
200
300
400
0.1110100
EMITTER CURRENT IE[mA]
G A I N B A N D W I D T H P R O D U C T f T [M H z ]
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE
01
10
100
-0.1
-1
-10
-100
COLLECTOR TO BASE VOLTAGE VCB[V]
C O L L E C T O R O U T P U T C A P A C I T A N C E C o b [p F ]
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
50
100
150
200
250
050100150
AMBIENT TEMPERATURE Ta[℃]
C O L L E C T O R
D I S S I P A T I O N P c [m W ]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
10100
1000
-0.1
-1-10-100-1000
COLLECTOR CURRENT IC[mA]
D C F O R W A R D C U R R
E N T G A I N h
F E
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION