2SA1576ART1G中文资料

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2SA1576A贴片三极管 SOT-323三极管封装2SA1576A参数

2SA1576A贴片三极管 SOT-323三极管封装2SA1576A参数

The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8°
1. BASE 2. EMITTER 3. COLLECTOR
FEATURES Excellent hFE linearity Complements the 2SC4081 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -6 -150 200 150 -55-150 Unit V V V mA mW ℃ ℃
10

2SA1736中文资料

2SA1736中文资料
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1736
Power Amplifier Applications Power Switching Applications
2SA1736
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC4541
3
2006-11-09
Collector current IC (A)
IC – VBE
−3.0 Common emitter
VCE = −2 V −2.5
−2.0
−1.5
Ta = 100°C
25
−25 −1.0
−0.5
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
−10
Common emitter
−3
IC/IB = 20
−1
−0.3
Ta = 100°C −0.1
−0.03
25 −25
−0.01 −1
−3 −10 −30 −100 −300 −1000 −3000
Collector current IC (mA)

2SA2151中文资料

2SA2151中文资料

2SA2151DescriptionBy adapting the Sanken unique wafer-thinner technique, thesePNP power transistors achieve power-up by decreasing thermalresistance, and provide higher voltage avalanche breakdownrating. The high power-handling capacity of the TO-3P packageallows a smaller footprint on the circuit board design. Thisseries of transistors is very well suited to not only multichannelapplications for A V (audio-visual) amplifiers and receivers,but also parallel connection applications for PA (professionalaudio system) amplifiers.Applications include the following:▪Single transistors for audio amplifiers▪Home audio amplifiers▪Professional audio amplifiers▪Automobile audio amplifiers▪ Audio market▪Single transistors for general purposeFeatures and Benefits▪Small package (TO-3P)▪High power handling capacity, 160 W▪Improved sound output by reduced on-chip impedance▪For professional audio (PA) applications, V CEO = –200 Vversions available▪Complementary to 2SC6011▪Recommended output driver: 2SA1668Audio Amplification TransistorPackage: 3 Lead TO-3PAudio Amplification Transistor2SA2151ABSOLUTE MAXIMUM RATINGS at T A = 25°CCharacteristicSymbol Rating Unit Collector-Base Voltage V CBO –200V Collector-Emitter Voltage V CEO –200V Emitter-Base Voltage V EBO –6V Collector Current I C –15A Base CurrentI B –4A Collector Power Dissipation P C 160W Junction Temperature T J 150°C Storage TemperatureT stg–55 to150°CSELECTION GUIDEPart NumberTypeh FE RatingPacking2SA2151*PNPRange O: 50 to 100Bulk, 100 pieces Range P: 70 tp 140Range Y: 90 to 180*Specify h FE range when ordering. If no h FE range is specified, order will be fulfilled with either or both range O and range Y , depending upon availability.ELECTRICAL CHARACTERISTICS at T A = 25°CCharacteristicSymbol Test ConditionsMin.Typ.Max.Unit Collector-Cutoff Current I CBO V CB = –200 V –––10μA Emitter Cutoff Current I EBO V EB = –6 V –––10μA Collector-Emitter Voltage V (BR)CEOI C = –50 mA –200––V DC Current Transfer Ratio*h FE V CE = –4 V, I C = –3 A 50–180–Collector-Emitter Saturation Voltage V CE(sat)I C = –5 A, I B = –0.5 A –––0.5V Cutoff Frequency f T V CE = –12 V, I E = 0.5 A–20–MHz Output CapacitanceC OBV CB = –10 V, I E = 0 A, f = 1 MHz–450–pF*h FE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).Audio Amplification Transistor2SA2151Performance Characteristics–I C (A )I C vs.V CEI C vs.V BE–V CE =4V Continuous–I C (A )05h FE vs. I C–V CE =4V Continuous–I C (A)h F Et (ms)Audio Amplification Transistor2SA2151–I C (A )–V CE (V)Safe Operating AreaT A = 25°C, single pulse, no heatsink, natural cooling 102030f T vs. I E –V CE = 12 V Continuousf T (M H z )I E (A)P C vs. T AT A (°C)P (W )Performance Characteristics, continuedAudio Amplification Transistor2SA2151Terminal core material: CuTerminal treatment: Ni plating and solder dip Heat sink core material: Cu Heat sink treatment: Ni plating Leadform number: 100Dimensions in millimetersBranding codes (exact appearance at manufacturer discretion):1st line, type: A21512nd line, lot: YM H Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D )H is the h FE rating (O, P , or Y ; for values see footnote, Electrical Characteristics table)PACKAGE OUTLINE DRAWING, TO-3PLeadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive.Audio Amplification Transistor 2SA2151Because reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions.Cautions for Storage• Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity(around 40 to 75%); avoid storage locations that experienceextreme changes in temperature or humidity.• Avoid locations where dust or harmful gases are present and avoid direct sunlight.• Reinspect for rust on leads and solderability of products that have been stored for a long time.Cautions for Testing and HandlingWhen tests are carried out during inspection testing and otherstandard test periods, protect the products from power surgesfrom the testing device, shorts between adjacent products, and shorts to the heatsink.Remarks About Using Silicone Grease with a Heatsink• When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more siliconegrease than required is applied, it may produce stress.• Coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink.• Volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reducedheat radiation effect, and possibly shortening the lifetime of theproduct.• Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, areindicated below:Type SuppliersG746Shin-Etsu Chemical Co., Ltd.YG6260GE Toshiba Silicone Co., Ltd.SC102Dow Corning Toray Silicone Co., Ltd.Heatsink Mounting Method• Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame.To avoid these problems, observe the recommended tightening torques for this product package type, TO-3P (MT-100): 0.686 to 0.882 N•m (7 to 9 kgf•cm).• Diameter of Heatsink Hole: < 4 mm. The defl ection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect.Soldering• When soldering the products, please be sure to minimize the working time, within the following limits:260±5°C 10 s350±5°C 3 s• Soldering iron should be at a distance of at least 1.5 mm from the body of the productsElectrostatic Discharge• When handling the products, operator must be grounded.Grounded wrist straps worn should have at least 1 MΩ ofresistance to ground to prevent shock hazard.• Workbenches where the products are handled should begrounded and be provided with conductive table and floor mats.• When using measuring equipment such as a curve tracer, the equipment should be grounded.• When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltagesgenerated by them from being applied to the products.• The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped inaluminum foil.Audio Amplification Transistor 2SA2151The products described herein are manufactured in Ja p an by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.Sanken and Allegro reserve the right to make, from time to time, such de p ar t ures from the detail spec i f i c a t ions as may be re q uired to per m it im-p rove m ents in the per f or m ance, reliability, or manufacturability of its prod u cts. Therefore, the user is cau t ioned to verify that the in f or m a t ion in this publication is current before placing any order.When using the products described herein, the ap p li c a b il i t y and suit a bil i t y of such products for the intended purpose shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its prod u cts, the occurrence of failure and defect of semi c on d uc t or products at a certain rate is in e v i t a b le.Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction.Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip m ent or apparatus (home ap p li a nc e s, office equipment, tele c om m u n i c a t ion equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aero s pace equipment) is not supported.When considering the use of Sanken products in ap p li c a t ions where higher reliability is re q uired (transportation equipment and its control systems or equip m ent, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your spec i f i c a t ions.The use of Sanken products without the written consent of Sanken in applications where ex t reme l y high reliability is required (aerospace equip-ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.The information in c lud e d herein is believed to be accurate and reliable. Ap p li c a t ion and operation examples described in this pub l i c a t ion are given for reference only and Sanken and Allegro assume no re s pon s i b il i t y for any in f ringe m ent of in d us t ri a l property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use.Anti radioactive ray design is not considered for the products listed herein.Copyright © 2006 Allegro MicroSystems, Inc.This datasheet is based on Sanken datasheet SSE-23012。

2SA1037中文资料

2SA1037中文资料

Transistors2SA2029 / 2SA933AS General Purpose Transistor(−50V, −0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 /2SA933AS!Features1) Excellent h FE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.!StructureEpitaxial planar type.PNP silicon transistor !External dimensions (Units : mm)∗ Denotes h FETransistors 2SA2029 / 2SA933AS!Absolute maximum ratings (T a=25°C)Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector powerdissipationJunction temperature Storage temperatureParameterV CBO V CEO V EBO I CP C Tj Tstg−60V V V A (DC)˚C ˚C−50−6−0.15W0.20.150.32SA1037AK, 2SA1576A2SA2029, 2SA17742SA933AS 150−55~+150Symbol Limits Unit !Electrical characteristics (T a=25°C)Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff currentDC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitanceParameterSymbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)f T CobMin.−60−50−6−−120−−−−−−−−−−1404.0−−−−0.1−0.1560−0.5−5.0V I C=−50µA I C =−1µA I E =−50µA V CB =−60V V EB =−6VV CE =−6V, I C =−1mAI C /I B =−50mA/−5mA V CE =−12V, I E =2mA, f =30MHz V CB =−12V, I E =0A, f =1MHzV V µA µA −V MHz pFTyp.Max.Unit Conditions!Packaging specifications and h FEh FE values are classified as follows:Item Q R S h FE120~270180~390270~560Transistors 2SA2029 / 2SA933AS!Electrical characteristic curvesFig.1 Grounded emitter propagationcharacteristicsC O L L E C T O R C U R R E N T : I c (m A )−−−−−−−−−BASE TO EMITTER VOLTAGE : V BE (V)Fig.2 Grounded emitter outputcharacteristics (I)−−−−−C O L L E C T O R C U R R E N T : I C (m A )COLLECTOR TO MITTER VOLTAGE : V CE (V)Fig.3 Grounded emitter outputcharacteristics (II)−−−−−C O L L E C T O R C U R R E N T : I C (m A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.4 DC current gain vs.collector current (I)D C C U R RE N T G A I N : h FECOLLECTOR CURRENT : I C (mA)Fig.5 DC current gain vs.collector current (II)−D C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.6 Collector-emitter saturationvoltage vs. collector current (I)−−−−−−COLLECTOR CURRENT : I C (mA)C O L L EC T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )Fig.7 Collector-emitter saturationvoltage vs. collector current (II)−−−−−−COLLECTOR CURRENT : I C (mA)C O L L E C T O RS A T U R A T I O N V O L T A G E : V C E (s a t ) (V )Fig.8 Gain bandwidth product vs.emitter currentEMITTER CURRENT : I E (mA)T R A N S I T I O N F R E Q U E N C Y : f T (M H z )Fig.9 Collector output capacitance vs.collector-base voltageEmitter inputcapacitance vs.emitter-base voltageCOLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)C O L L E C T O R O U T P U T C A P A C I T A N C E :C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )。

2SC系列三极管参数

2SC系列三极管参数

2SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz2SC1012A SI-N 250V 60mA 0.75W >80MHz2SC1014 SI-N 50V 1.5A 7W2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W 60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A 0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz |2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A 0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A 0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A 15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A 10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V 1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A 15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A 5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A 0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A 600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA 0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V 0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz |2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>2002SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A 0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz2SC1914 SI-N 90V 50mA 0.2W 150MHz | 2SC1921 SI-N 250V 0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW 550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W2SC1946A SI-N 35V 7A 50W |2SC1947 SI-N 35V 1A 4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz |2SC1957 SI-N 40V 1A 1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz |2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz |2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W |2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W |2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz |2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz |2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W |2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W2SC2060 SI-N 40V 0.7A 0.75W 150MHz | 2SC2061 SI-N 80V 1A 0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5APQ>15W 175MHz2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W 1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A 0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A 80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A 25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A 0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W 2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V 50mA 0.4W 130MHz2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A 50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A 0.9W 100MHz2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W 175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W 2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W 0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W 2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W 2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V 1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W 2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA 1W 160MHz2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A 15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A 20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V 0.07A 0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2787 SI-N 50V 30mA 0.3W 250MHz | 2SC2791 SI-N 900V 5A 100W 2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W 2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A 0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W 2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V 140mA 10W 150MHz2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V 0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W 2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3APQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W 2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W 2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A 0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V 50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W 2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W 27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W 2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W 2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W 15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A 0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz | 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V 1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A 40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>102SC3262 N-DARL 800V 10A 100W | 2SC3263 SI-N 230V 15A 130W 2SC3264 SI-N 230V 17A 200W 60MHz | 2SC3271 SI-N 300V 1A 5W 80MHz2SC3277 SI-N 500V 10A 90W 20MHz | 2SC3279 SI-N 10V 2A 0.75W 150MHz2SC3280 SI-N 160V 12A 120W 30MHz | 2SC3281 SI-N 200V 15A 150W 30MHz2SC3284 SI-N 150V 14A 125W 60MHz | 2SC3293 N-DARL+D 50V 1.2A 20W 1802SC3297 SI-N 30V 3A 15W 100MHz | 2SC3299 SI-N 60V 5A 20W 0.1us2SC3300 SI-N 100V 15A 100W | 2SC3303 SI-N 100V 5A 20W 0.2us2SC3306 SI-N 500V 10A 100W 1us | 2SC3307 SI-N 900V 10A 150W 1us2SC3309 SI-N 500V 2A 20W 1us | 2SC3310 SI-N 500V 5A 30W 1us2SC3311 SI-N 60V 0.1A 0.3W 150MHz | 2SC3320 SI-N 500V 15A 80W2SC3326 SI-N 20V 0.3A 0.15W 30MHz | 2SC3327 SI-N 50V 0.3A 0.2W 30MHz2SC3328 SI-N 80V 2A 0.9W 100MHz | 2SC3330 SI-N 60V 0.2A 0.3W 200MHz2SC3331 SI-N 60V 0.2A 0.5W 200MHz | 2SC3332 SI-N 180V 0.7A 0.7W 120MHz2SC3334 SI-N 250V 50mA 0.9W 100MHz | 2SC3345 SI-N 60V 12A 40W 90MHz2SC3346 SI-N 80V 12A 40W 0.2us | 2SC3355 SI-N 20V 0.1A 0.6W 6.5GHz2SC3356 SI-N 20V 0.1A 0.2W 7GHz | 2SC3377 SI-N 40V 1A 0.6W 150MHz2SC3378 SI-N 120V 0.1A 0.2W 100MHz | 2SC3379 SI-N 20V 1.5A PQ=3W 2SC3381 2xSI-N 80V 0.1A 0.4W 170MHz | 2SC3383 SI-N 60V 0.2A 0.5W 250MHz2SC3397 SI-N 50V 0.1A 250MHz 46K/ | 2SC3399 SI-N 50V 0.1A 250MHz2SC3400 SI-N 50V 0.1A 250MHz 22K/ | 2SC3401 SI-N 50V .1A46K/23KOHM2SC3402 SI-N 50V 0.1A 250MHz 10K/ | 2SC3405 SI-N 900V 0.8A 20W 1us2SC3409 SI-N 900V 2A 80W .8uS | 2SC3416 SI-N 200V 0.1A 5W 70MHz2SC3419 SI-N 40V 0.8A 5W 100MHz | 2SC3420 SI-N 50V 5A 10W 100MHz2SC3421O SI-N 120V 1A 1.5W BJT O-G | 2SC3421Y SI-N 120V 1A 10W 120MHz2SC3422Y SI-N 40V 3A 10W 100MHz | 2SC3423 SI-N 150V 50mA 5W 200MHz2SC3425 SI-N 500V 0.8A 10W | 2SC3446 SI-N 800V 7A 40W 18MHz2SC3447 SI-N 800V 5A 50W 18MHz | 2SC3456 SI-N 1100/800V 1.5A 40W2SC3457 SI-N 1100V 3A 50W | 2SC3460 SI-N 1100V 6A 100W 2SC3461 SI-N 1100/800V 8A 120W | 2SC3466 SI-N 1200/650V 8A 120W2SC3467 SI-N 200V 0.1A 1W 150MHz | 2SC3468 SI-N 300V 0.1A 1W 150MHz2SC3486 SI-N 1500V 6A 120W | 2SC3502 SI-N 200V 0.1A 1.2W2SC3503 SI-N 300V 0.1A 7W 150MHz | 2SC3504 SI-N 70V 0.05A 0.9W 500MHz2SC3505 SI-N 900V 6A 80W | 2SC3507 SI-N 1000/800V 5A 80W2SC3509 N-DARL+D 900V 10A 100W 0. | 2SC3514 SI-N 180V 0.1A 10W 200MHz2SC3518 SI-N 60V 5A 10W | 2SC3520 SI-N 500V 18A 130W 18MHz2SC3526 SI-N 110V 0.15A 7A 30W 1us | 2SC3528 SI-N 500V 20A 125W 2SC3549 SI-N 900V 3A 40W | 2SC3552 SI-N 1100V 12A 150W 15MHz2SC3568 SI-N 150V 10A 30W | 2SC3571 SI-N 500V 7A 30W 2SC3577 SI-N 850V 5A 80W 6MHz | 2SC3581 SI-N 55V 0.4A 0.9W 150MHz2SC3591 SI-N 400V 7A 50W | 2SC3595 SI-N 30V 0.5A 5W 2GHz2SC3596 SI-N 80V 0.3A 8W 700MHz | 2SC3597 SI-N 80V 0.5A 10W 800MHz2SC3599 SI-N 120V 0.3A 8W 500MHz | 2SC3600 SI-N 200V 0.1A 7W 400MHz2SC3601 SI-N 200V 0.15A 7W 400MHz | 2SC3608 SI-N 20V 0.08A 6.5GHz2SC3611 SI-N 50V 0.15A 4W 300MHz | 2SC3616 SI-N 25V 0.7A 250MHz2SC3621 SI-N 150V 1.5A 10W 100MHz | 2SC3623 SI-N 60V 0.15A 0.25W B=1K2SC3632 SI-N 600V 1A 10W 30MHz | 2SC3636 SI-N 900/500V 7A 80W2SC3642 SI-N 1200V 6A 100W 200ns | 2SC3655 SI-N 50V 0.1A 0.4W 46/23K2SC3656 SI-N 50V 0.1A 0.4W 10K/10 | 2SC3659 SI-N+D 1700/800V 5A 50W2SC3668 SI-N 50V 2A 1W 100MHz | 2SC3669 SI-N 80V 2A 1W 0.2us2SC3675 SI-N 1500/900V 0.1A 10W | 2SC3678 SI-N 900V 3A 80W 2SC3679 SI-N 900/800V 5A 100W | 2SC3680 SI-N 900/800V 7A 120W 6MHz2SC3684 SI-N+D 1500V 10A 150W | 2SC3688 SI-N 1500V 10A 150W 0.2us2SC3692 SI-N 100V 7A 30W <300/180 | 2SC373 SI-N 35V 0.1A 0.2W B>2002SC3746 SI-N 80V 5A 20W 100MHz | 2SC3748 SI-N 80V 10A 30W 100/600ns2SC3752 SI-N 1100/800V 3A 30W | 2SC3781 SI-N 120V 0.4A 15W 500MHz2SC3782 SI-N 200V 0.2A 15W 400MHz | 2SC3783 SI-N 800V 5A 100W 2SC3787 SI-N 180V 0.14A 10W 150MHz | 2SC3788 SI-N 200V 0.1A 5W150MHz2SC3789 SI-N 300V 0.1A 7W 70MHz | 2SC3790 SI-N 300V 0.1A 7W 150MHz2SC3792 SI-N 50V 0.5A 0.5W 250MHz | 2SC3795A SI-N 900V 5A 40W 2SC3807 SI-N 30V 2A 15W 260MHz | 2SC3808 N-DARL 80V 2A 170MHz B>802SC380TM SI-N 30V 50mA 0.3W 100MHz | 2SC3811 SI-N 40V 0.1A 0.4W 450MHz2SC3831 SI-N 500V 10A 100W | 2SC3833 SI-N 500/400V 12A 100W2SC3842 SI-N 600V 10A 70W 32MHz | 2SC3844 SI-N 600V 15A 75W 30MHz2SC3851 SI-N 80V 4A 25W 15MHz | 2SC3852 SI-N 80V 3A 25W 15MHz2SC3855 SI-N 200V 10A 100W 20MHz | 2SC3857 SI-N 200V 15A 150W 20MHz2SC3858 SI-N 200V 17A 200W 20MHz | 2SC3866 SI-N 900V 3A 40W 2SC3868 SI-N 500V 1.5A 25W 0.7us | 2SC3883 SI-N+D 1500V 6A 50W 2SC3884A SI-N 1500V 6A 50W | 2SC3886A SI-N 1500V 8A 50W 0.1us2SC388A SI-N 25V 50mA 0.3W 300MHz | 2SC3890 SI-N 500V 7A 30W 500NS2SC3892A SI-N+D 1500V 7A 50W 0.4us | 2SC3893A SI-N+D 1500V 8A 50W 2SC3895 SI-N 1500/800V 8A 70W | 2SC3896 SI-N 1500V 8A 70W 2SC3897 SI-N 1500V 10A 70W | 2SC3902 SI-N 180V 1.5A 10W 120MHz2SC3907 SI-N 180V 12A 130W 30MHz | 2SC3927 SI-N 900V 10A 120W 2SC394 SI-N 25V 0.1A 200MC RF | 2SC3940 SI-N 30V 1A 1W 200MHz2SC3943 SI-N 110V 0.15A 2W 300MHz | 2SC3944 SI-N 150V 1A 40W 300MHz2SC3948 SI-N 850V 10A 75W 20MHz | 2SC3950 SI-N 30V 0.5A 5W 2SC3952 SI-N 80V 0.5A 10W 700MHz | 2SC3953 SI-N 120V 0.2A 8W 400MHz2SC3954 SI-N 120V 0.3A 8W 400MHz | 2SC3955 SI-N 200V 0.1A 7W 300MHz2SC3956 SI-N 200V 0.2A 7W 70MHz | 2SC3964 SI-N 40V 2A 1.5W 1us2SC3972 SI-N 800/500V 5A 40W | 2SC3973A SI-N 900V 7A 45W 2SC3979A SI-N 800V 3A 2W 10MHz | 2SC3987 N-DARL+D 50V 3A 15W 2SC3996 SI-N 1500/800V 15A 180W | 2SC3998 SI-N 1500V 25A 250W POWER2SC3999 SI-N 300V 0.1A 0.75W 300MHz | 2SC4004 SI-N 900/800V 1A 30W <1/42SC4020 SI-N 900V 3A 50W 1us | 2SC4024 SI-N 100V 10A 35W B>3002SC4029 SI-N 230V 15A 150W 30MHz | 2SC4043 SI-N 20V 50mA 0.15W 3.2GHz2SC4046 SI-N 120V 0.2A 8W 350MHz | 2SC4052 SI-N 600V 3A 40W 20MHz2SC4056 SI-N 600V 8A 45W | 2SC4059 SI-N 600/450V 15A 130W2SC4064 SI-N 50V 12A 35W 40MHz | 2SC4107 SI-N 500/400V 10A 60W2SC4119 N-DARL+D 1500V 15A 250W B | 2SC4123 SI-N+D 1500V 7A 60W 2SC4125 SI-N+D 1500/800V 10A 70W | 2SC4131 SI-N 100V 15A 60W 18MHz2SC4135 SI-N 120V 2A 15W 200MHz | 2SC4137 SI-N 25V 0.1A300MHz2SC4138 SI-N 500V 10A 80W <1/3.5us | 2SC4153 SI-N 200V 7A 30W 0.5us2SC4157 SI-N 600V 10A 100W | 2SC4159 SI-N 180V 1.5A 15W 100MHz2SC4161 SI-N 500V 7A 30W | 2SC4169 N-DARL+D 50V 1.2A 1W B=4K2SC4199 SI-N 1400V 10A 100W | 2SC4200 SI-N 20V 0.6A 5W 2.5GHz2SC4204 SI-N 30V 0.7A 0.6W | 2SC4231 SI-N 1200/800V 2A 30W2SC4235 SI-N 1200/800V 3A 80W | 2SC4236 SI-N 1200/800V 6A 100W2SC4237 SI-N 1200/800V 10A 150W | 2SC4242 SI-N 450/400V 7A 40W2SC4256 SI-N 1500V 10A 175W 6MHz | 2SC4278 SI-N 150V 10A 100W 30MHz2SC4288A SI-N1600/600V 12A 200W | 2SC4289A SI-N 1500V 16A 200W2SC4290A SI-N 1500V 20A 200W | 2SC4297 SI-N 500V 12A 75W 10MHz2SC4298 SI-N 500V 15A 80W 10MHz | 2SC4300 SI-N 900V 5A 75W 1/6us2SC4304 SI-N 800V 3A 35W | 2SC4308 SI-N 30V 0.3A 0.6W 2.5GHz2SC4313 SI-N 900V 10A 100W 0.5us | 2SC4381 SI-N 150V 2A 25W 15MHz2SC4382 SI-N 200V 2A 25W 15MHz | 2SC4386 SI-N 160/120V 8A 75W 20MHz2SC4387 SI-N 200V 10A 80W 20MHz | 2SC4388 SI-N 200V 15A 85W 20MHz2SC4408 SI-N 80V 2A 0.9W 100/600ns | 2SC4429 SI-N 1100/800V 8A 60W2SC4430 SI-N 1100V 12A 65W 15MHz | 2SC4431 SI-N 120V 1.5A 20W 150MHz2SC4439 SI-N 180V 0.3A 8W 400MHz | 2SC4467 SI-N 160/120V 8A 80W 20MHz2SC4468 SI-N 200V 10A 80W 20MHz | 2SC4484 SI-N 30V 2.5A 1W 250MHz2SC4488 SI-N 120V 1A 1W 120MHz | 2SC4511 SI-N 120V 6A 30W 20MHz2SC4512 SI-N 120V 6A 50W 20MHz | 2SC4517 SI-N 900V 3A 30W 6MHz2SC4517A SI-N 1000V 3A 30W 0.5us | 2SC4531 SI-N+D 1500V 10A 50W2SC4532 SI-N 1700V 10A 200W 2uS | 2SC4538 SI-N 900V 5A 80W 2SC454 SI-N 30V 0.1A 230MHz | 2SC4542 SI-N 1500V 10A 50W 2SC4547 N-DARL+D 85V 3A 30W B>2K | 2SC4557 SI-N 900V 10A 80W <1/5.5us2SC4560 SI-N 1500V 10A 80W | 2SC458 SI-N 30V 0.1A 230MC UNI2SC4582 SI-N 600V 100A 65W 20MHz | 2SC460 SI-N 30V 0.1A 0.2W 230MHz2SC461 SI-N 30V 0.1A 0.2W 230MHz | 2SC4744 SI-N 1500V 6A POWER 2SC4745 SI-N 1500V 6A | 2SC4747 SI-N 1500V 10A 50W 0.3us2SC4758 SI-N 1500V 8A 50W HI-RES | 2SC4769 SI-N+D 1500V 7A 60W 2SC4770 SI-N 1500/800V 7A 60W | 2SC4793 SI-N 230V 1A 2W100MHz2SC4804 SI-N 900V 3A 30W 0.3us | 2SC4820 SI-N 450V 6A 30W 12MHz2SC4826 SI-N 200V 3A 1.3W 300MHz | 2SC4834 SI-N 500V 8A 45W <0.3/1.42SC4883A SI-N 180V 2A 20W 120MHz | 2SC4891 SI-N 1500V 15A 75W 2SC4908 SI-N 900V 3A 35W 1us | 2SC4924 SI-N 800V 10A 70W 2SC4977 SI-N 450V 7A 40W | 2SC5002 SI-N 1500V 7A 80W 2SC5003 SI-N+D 1500V 7A 80W | 2SC5027 SI-N 1100V 3A 50W 0.3us2SC5030 SI-N 50V 5A 1.3W 150MHz | 2SC5045 SI-N 1600V 15A 75W 2SC5047 SI-N 1600V 25A 250W | 2SC5048 SI-N 1500V 12A 50W 0.3us2SC5070 SI-N 30V 2A 1.5W B>800 | 2SC5086 SI-N 20V 80MA 7GHZ 2SC509 SI-N 35V 0.5A 0.6W 60MHz | 2SC5144 SI-N 1700V 20A 200W 2SC5148 SI-N 1500V 8A 50W 0.2us | 2SC5149 SI-N+D 1500V 8A 50W 0.2us2SC5150 SI-N 1700V 10A 50W 03us | 2SC5171 SI-N 180V 2A 20W 200MHz2SC5198 SI-N 140V 10A 100W 30MHz | 2SC5207 SI-N 1500V 10A 50W 0.4us2SC5242 SI-N 230V 15A 130W 30MHz | 2SC5244A SI-N 1600V 30A 200W 2SC5296 SI-N+D 1500V 8A 60W | 2SC5297 SI-N 1500V 8A 60W 2SC5299 SI-N 1500V 10A 70W 0.2US | 2SC535 SI-N 20V 20mA 0.1W 0.700M2SC536 SI-N 40V 0.1A 180MC UNI | 2SC620 SI-N 50V 0.2A 0.25W UNI2SC643 SI-N 1100V 2.5A 50W | 2SC644 SI-N 30V 50mA 0.25W2SC645 SI-N 30V 30mA 0.14W 200MHz | 2SC710 SI-N 30V 0.03A 200MHz2SC711 SI-N 30V 0.05A 150MHz | 2SC712 SI-N 30V 0.5A 150MHz2SC717 SI-N 30V 50mA 0.2W 600MHz | 2SC730 SI-N 40V 0.4A PQ=1.5W2SC732 SI-N 50V 0.15A 0.4W 150MHz | 2SC735 SI-N 35V 0.4A 0.3W UNI2SC752 SI-N 15V 100mA 0.1W | 2SC756 SI-N 40V 4A 10W 65MHz2SC784 SI-N 40V 0.02A 500MC RF | 2SC815 SI-N 60V 0.2A 0.25W 200MHz2SC828 SI-N 30V 0.05A 0.25W UNI | 2SC829 SI-N 30V 30mA 0.4W 230MHz2SC839 SI-N 50V 0.03A 250MHz | 2SC867 SI-N 400V 1A 23W 8MHz2SC869 SI-N 160V 30mA 0.2W 150MHz | 2SC898A SI-N 150V 7A 80W 15MHz2SC900 SI-N 30V 0.03A 100MHz | 2SC930 SI-N 15V 0.03A 300MC RF2SC936 SI-N 1000V 1A 22W POWER | 2SC941 SI-N 35V 20mA 0.2W 120MHz2SC943 SI-N 60V 0.2A 0.3W 220MHz | 2SC945 SI-N 50V 0.1A 250MC UNI2SC982 N-DARL 40V 0.3A 0.4W。

2SC961电子产品数据册,包含产品说明、参数、规格等信息说明书

2SC961电子产品数据册,包含产品说明、参数、规格等信息说明书
Products Catalog Index
PART NO. MANUFACTURER
DESCRIPTION
URL
2SC961
Fuji-SVEA
Japanese 2S Transistor Cross Reference Datasheet
/2SC961-datasheet.html
/2SC962-datasheet.html
2SC962
N/A
Transistor Substitution Data Book /2SC962-datasheet.html 1993
2SC962
N/A
The Japanese Transistor Manual 1981
/2SC962-datasheet.html
2SC962
N/A
Shortform Transistor Datasheet Guide
/2SC962-datasheet.html
Products Catalog Index
PART NO. MANUFACTURER
DESCRIPTION
URL
2SC963
N/A
Shortform Transistor PDF Datasheet
/2SC963-datasheet.html
PRICE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE
QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE QUOTE
1/9
2SC961
N/A
The Japanese Transistor Manual 1981

2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」

2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
FAP-IIS系列
特征
高速开关 低导通电阻 无二次击穿 低驱动电源 高压 V GS =±30V防护证 额定重复性雪崩
2SK2645-01MR
外形图
N沟道MOS-FET
600V
1,2
9A
50W
应用
开关稳压器
UPS DC-DC转换
通用功率放大器
最大额定值和特性
- 绝对最大额定值 (
10
[A] Eas [mJ] I
12
Starting T [°C]
V [V] 本规范如有变更,恕不另行通知!
t [s]
雪崩能​力 二极管正向导通电压 反向恢复时间 反向恢复电荷
V GS =0V V DS= V GS Tch=25°C Tch=125°C V DS=0V V GS =10V V DS=25V V DS=25V V GS =0V f=1MHz V CC=300V ID=9A V GS=10V RGS =10 L = 100µH Tch=25°C I F=2xI DR V GS=0V T ch=25°C IF=I DR V GS=0V -dI F/dt=100A/µs T ch=25°C
Unit V A A V A mJ W °C °C
- 电气特性(T
Item
漏源击穿电压 门门限电压 零栅压漏电流 门源漏电流 漏源极导通状态电阻 正向跨 输入电容 输出电容 反向传输电容 导通时间t on (t on =t d(on) +t r ) 关断时间t
off (ton=t d(off)+t f)
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T

2SA1568中文资料

2SA1568中文资料

h FE – I C Characteristics (Typical)
(V C E =–1V) 300
h FE – I C Temperature Characteristics (Typical)
(V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E 100 25˚C –30˚C
mA
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
sTypical Switching Characteristics (Common Emitter)
VCC (V) –24 RL (Ω) 4 IC (A) –6 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –120 IB2 (mA) 120 ton (µs) 0.4typ tstg (µs) 0.4typ tf (µs) 0.2typ
元器件交易网
Built-in Diode at C–E Low VCE (sat)
2SA1568
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VFEC fT COB Conditions VCB=–60V VEB=–6V IC=–25mA VCE=–1V, IC=–6A IC=–6A, IB=–0.3A IECO=–10A VCE=–12V, IE=0.5A VCB=–10V, f=1MHz (Ta=25°C) 2SA1568 –100max –60max –60min 50min –0.35max –2.5max 40typ 330typ V V MHz pF

2SC4617T1G中文资料

2SC4617T1G中文资料

2SC4617NPN Silicon General Purpose Amplifier TransistorThis NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium.Features•Pb−Free Package is Available*•Reduces Board Space•High h FE, 210−460 (typical)•Low V CE(sat), < 0.5 V•Available in 8 mm, 7 inch/3000 Unit Tape and Reel*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSSURFACE MOUNTSee detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.ORDERING INFORMATIONSC−75CASE 463STYLE 1MARKING DIAGRAM123COLLECTOR31BASE2EMITTERB9= Specific Device CodeM= Date CodeB9 M1MAXIMUM RATINGS (T = 25°C)values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICS (T = 25°C)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.TYPICAL ELECTRICAL CHARACTERISTICSFigure 3. Collector Saturation RegionI B , BASE CURRENT (mA)Figure 4. On VoltageI C , COLLECTOR CURRENT (mA)I C , C O L L E C T O R C U R R E N T (m A )V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V )21.510.50Figure 5. Capacitance V CB (V)Figure 6. CapacitanceV EB (V)20181614121012347C i b , I N P U T C A P A C I T A N C E (p F )65432110203040C o b , C A P A C I T A N C E (p F )PACKAGE DIMENSIONSSC−75 (SOT−416)CASE 463−01ISSUE CON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

2SA系列(PNP型)三极管参数表

2SA系列(PNP型)三极管参数表
3CG180F
2SA105
锗PNP三极管
900m
-2
-50
-50
100M
40-240
CK77B
2SA1020T
UTC
硅PNP三极管,功率放大,功率开关,配对管2SC2655
900m
-2
-50
-50
100M
40-240
CK77B
2SA1021
TOSHIBA
停产,用2SA1408代替
20
-1.5
-150
20M
3CA10F
2SA1022
PANASONIC
-55
-50
200M
100-320
3CK14H
2SA1032C
HITACHI
硅PNP三极管,高频低噪声放大,配对管2SC458/2SC2310
300m
-100m
-55
-50
200M
100-320
3CK14H
2SA1033
硅PNP三极管
-100m
-30
280M
3CG120A
2SA1034
PANASONIC
-25
200M
50-340
CK77A
2SA0684
PANASONIC
硅PNP三极管,低频功率放大和驱动,配对管2SC1384
1
-1.5
-60
-50
200M
50-340
CK77A
2SA0794
PANASONIC
硅PNP三极管,低频功率放大和驱动,配对管2SC1567
1.2
-500m
-100
-100
120M
2SA1030

2SA1085资料

2SA1085资料
–5
–2 –1.0 –0.5
–0.2
–0.1 –1
–2 –5 –10 –20 –50 –100 Collector Current IC (mA)
Gain bandwidth product fT (MHz)
Collector to emitter saturation voltage VCE(sat) (V)
2,000 1,000
500
Gain Bandwidth Product vs. Collector Current
VCE = –12 V
200 100
50
20 –1 –2
–5 –10 –20 –50 –100
Collector Current IC (mA)
Base to emitter saturation voltage VBE(sat) (V)
Symbol VCBO VCEO VEBO IC IE PC Tj Tstg
2SA1083
2SA1084
2SA1085
Unit
–60
–90
–120
V
–60
–90
–120
V
–5
–5
–5
V
–100
–100
–100
mA
100
100
100
mA
150
150
°C
–55 to +150 –55 to +150 –55 to +150 °C
VCE = –12 V Pulse
200
100
50 –0.1 –0.3 –1.0 –3 –10 –30
Collector Current IC (mA)
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© Semiconductor Components Industries, LLC, 2006 May, 2006 − Rev. 4Publication Order Number:2SA1576ART1/D 12SA1576ART1General PurposeAmplifier TransistorsPNP Surface MountFeatures•Moisture Sensitivity Level: 1•Pb−Free Package is AvailableMAXIMUM RATINGS (T A = 25°C)Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO60Vdc Collector−Emitter Voltage V(BR)CEO50Vdc Emitter−Base Voltage V(BR)EBO7.0Vdc Collector Current − Continuous I C100mAdc Collector Current − Peak I C(P)200mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Power Dissipation P D200mW Junction Temperature T J150°C Storage Temperature T stg−55 to +150°C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol Min Max UnitCollector−Emitter Breakdown Voltage(I C = 2.0 mAdc, I B = 0)V(BR)CEO50−VdcCollector−Base Breakdown Voltage(I C = 10 m Adc, I E = 0)V(BR)CBO60−VdcEmitter−Base Breakdown Voltage(IE = 10 m Adc, I C = 0)V(BR)EBO7.0−VdcCollector−Base Cutoff Current(V CB = 60 Vdc, I E = 0)I CBO−0.1m AdcCollector−Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)(V CE = 30 Vdc, I B = 0)(V CE = 30 Vdc, I B = 0, T A = 80°C)I CEO−−−0.12.01.0m Adcm AdcmAdcDC Current Gain (Note 1)(V CE = 6.0 Vdc, I C = 2.0 mAdc)h FE180390−Collector−Emitter Saturation Voltage(I C = 100 mAdc, I B = 10 mAdc)V CE(sat)−0.5Vdc 1.Pulse Test: Pulse Width ≤ 300 m s, D.C. ≤ 2%.SC−70CASE 419MARKING DIAGRAM76= Device CodeM= Date Code*G= Pb−Free PackageCOLLECTORBASE EMITTERDevice*Package Shipping†ORDERING INFORMATION2SA1576ART1SC−703000/T ape & Reel*The “T1” suffix refers to a 7 inch reel.†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.2SA1576ART1G SC−70(Pb−Free)3000/T ape & Reel (Note: Microdot may be in either location)*Date Code orientation may vary depending upon manufacturing location.76 M GG12SA1576ART1PACKAGE DIMENSIONSSC−70 (SOT−323)CASE 419−04ISSUE Mǒmm ǓSCALE 10:1*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。

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