DSEI30-06A;中文规格书,Datasheet资料

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uscar-30 中文版

4 一般要求概述 ................................................................................................................. 錯誤! 尚未定義書籤。
4.1 持續紀錄................................................................................................................. 錯誤! 尚未定義書籤。 4.2 樣品文件................................................................................................................. 錯誤! 尚未定義書籤。 4.3 樣品尺寸................................................................................................................. 錯誤! 尚未定義書籤。 4.4 默認測試公差......................................................................................................... 錯誤! 尚未定義書籤。 4.5 默認測試條件......................................................................................................... 錯誤! 尚未定義書籤。 4.6 設備......................................................................................................................... 錯誤! 尚未定義書籤。 4.7 測量方法................................................................................................................. 錯誤! 尚未定義書籤。 4.8 測量重復性＆標准性............................................................................................. 錯誤! 尚未定義書籤。 4.9 一致性規定............................................................................................................. 錯誤! 尚未定義書籤。 4.10 樣品處置................................................................................................................. 錯誤! 尚未定義書籤。 4.11 零件耐久性 E.......................................................................................................... 錯誤! 尚未定義書籤。

DSEI30-06A

Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
Dimensions
Dim. A B C D E F G H J K L M N
q q
Symbol
Test Conditions
Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders

DSEP30-06A;DSEP30-06BR;DSEP30-06B;中文规格书,Datasheet资料

417IXYS reserves the right to change limits, test conditions and dimensions.I FAV =30 A V RRM =600 V t rr =30/35 nsV RSM V RRMType V V 600600DSEP 30-06A 600600DSEP 30-06B 600600DSEP 30-06BRSymbol ConditionsMaximum RatingsI FRMS 70A I FAVM rect., d = 0.5; T C (Vers. A) = 135°C30A T C (Vers. B) = 125°C; T C (Vers. BR) = 115°C I FSM T VJ = 45°C; t p = 10 ms (50 Hz), sine 250A E AS T VJ = 25°C; non-repetitive 0.2mJ I AS = 1.3 A; L = 180 µHI AR V A = 1.5·V R typ.; f = 10 kHz; repetitive0.1A T VJ -55...+175°C T VJM 175°C T stg -55...+150°C P tot T C = 25°C 165W (Vers. BR)135W M d *mounting torque0.8...1.2Nm F C mounting force with clip20...120N V ISOL **50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500V~Weight typical 6g* Verson A only; ** Version BR onlySymbol ConditionsCharacteristic max. Values Vers. A Vers. BI R①T VJ = 25°C V R = V RRM 250250µA T VJ = 150°C V R = V RRM 12mA V F ②I F = 30 A;T VJ = 150°C 1.25 1.56V T VJ = 25°C1.602.51V R thJC 0.90.9K/W R thJC Version BR 1.1K/W R thCH typ.0.250.25K/W t rr typ.I F = 1 A; -di/dt = 200 A/µs;3530nsV R = 30 V; T VJ = 25°CI RM typ.VR = 100 V;I F = 50 A; -di F /dt = 100 A/µs 64AT VJ = 100°CHiPerFRED TM Epitaxial Diodewith soft recoveryFeatures •International standard package •Planar passivated chips •Very short recovery time•Extremely low switching losses •Low I RM -values•Soft recovery behaviour •Epoxy meets UL 94V-0•Version ..R isolated and UL registered E153432Applications•Antiparallel diode for high frequency switching devices •Antisaturation diode •Snubber diode•Free wheeling diode in converters and motor control circuits•Rectifiers in switch mode power supplies (SMPS)•Inductive heating•Uninterruptible power supplies (UPS)•Ultrasonic cleaners and welders Advantages•Avalanche voltage rated for reliable operation•Soft reverse recovery for low EMI/RFI•Low I RM reduces:-Power dissipation within the diode -Turn-on loss in the commutating switchDimensions see Outlines.pdfPulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0 %② Pulse Width = 300 µs, Duty Cycle < 2.0 %Data according to IEC 60747 and per diode unless otherwise specified. A = Anode, C = CathodeTO-247 ADISOPLUS 247TMVersion AVersion BRAC AC Isolated back surfaceCA417IXYS reserves the right to change limits, test conditions and dimensions.0.00.5 1.0010203040506070F A V Fig. 1Forward current I F versus V Fig. 7Transient thermal resistance junction to caseT VJ =100°CT VJ =150°C417IXYS reserves the right to change limits, test conditions and dimensions.Fig. 3Peak reverse current I RMversus -di F /dtFig. 2Reverse recovery charge Q rversus -di F /dtFig. 1Forward current I F versus V FF /dtFig. 6Peak forward voltage V FR and t frversus di F /dt Fig. 7Transient thermal resistance junction to caseNOTE: Fig. 2 to Fig. 6 shows typical valuesConstants for Z thJC calculation ..B:i R thi (K/W)t i (s)10.4650.005220.1790.000330.2560.0397Constants for Z thJC calculation ..BR:iR thi (K/W)t i (s)10.3680.005220.14170.000330.02950.000440.56040.00920.000.050.100.150.200.250.30012020406080100I FA V t frµs T VJ = 150°CT VJ = 100°CT VJ = 25°C分销商库存信息:IXYSDSEP30-06A DSEP30-06BR DSEP30-06B。

商斯达射频微波光电产品目录说明书

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商斯达射频微波光电产品网:/商斯达中国传感器科技信息网：/商斯达工控安防网：/商斯达电子元器件网：/商斯达军工产品网：hrrp：///商斯达消费电子产品网:///商斯达实业研制科技产品网:/// 射频微波光电元器件销售热线：地址：深圳市福田区福华路福庆街鸿图大厦1602室电话：0755-******** 83397033 83398585 82884100MSN:邮编：518033 E-mail:QQ: 195847376深圳赛格展销部：深圳华强北路赛格电子市场2583号电话：0755-******** 25059422 技术支持: 0755-******** 135********北京分公司：北京海淀区知春路132号中发电子大厦3097号TEL：82615020 FAX：上海分公司：上海市北京东路668号上海賽格电子市场D125号TEL：56703037 FAX：西安分公司：西安高新开发区20所(中国电子科技集团导航技术研究所)西安劳动南路88号电子商城二楼D23号TEL：Aavid ThermalloyABRACON CorporationAEPAeroflex INMETAeroflex KDI Resistor ProductsAmerican Tech Ceramics (ATC)AmphenolANADIGICSAnarenAnaren/RF PowerArcotronicsAvago TechnologiesBOMAR Interconnect Products, Inc.Cornell DubilierCrystek CorporationCTS CorporationDynex SemiconductorElectronic Devices, Inc.Emerson Network Power (formerly Johnson Components) Empower RF Systems, Inc.EPCOS F.W. BellFractusfree2moveFreescale Semiconductor, Inc. General ElectricGoreHoneywellHuber+SuhnerHVVIIllinois Capacitor, Inc.Infineon TechnologiesIQD Frequency ProductsJohanson ManufacturingLaird TechnologiesM/A-COM Technology Solutions Maxwell TechnologiesMicrosemiMicrosemi (Santa Clara)Mimix Broadband (formerly Celeritek) Mitsubishi ElectronicsNational ElectronicsNDKNEC Compound Semiconductors NitronexOhmitePacific MonolithicsPCTEL (Maxrad, Inc.)Peregrine Semiconductor PolyPhaser Corporation PowerexRadiallRadiotronixRaltronRES - IngeniumRF IndustriesRichardson Component Solutions Richardson Power Solutions Richardson System Solutions RiedonSDP Components, Inc. SemeLab, PlcSemikron Spectrum Advanced Specialty Products Spectrum MicrowaveST MicroelectronicsSV MicrowaveTeledyne CoaxTeledyne RelaysTensolite CDI/QMIToko AmericaTyco ElectronicsUnited Chemi-con, Inc.United Monolithic Semiconductors (UMS) Valpey FisherVincotechVishayWakefield Thermal SolutionsWanTcomWavecomWestcode Semiconductors, Inc.WJ CommunicationsMTI MilanoPacific MonolithicsMini-Circuits公司是1969年由 Harvey Kaylie先生创立的。

SI-30 chinese manual

2.1. 系统概述 ...................................................................................................................5 2.2. 特点...........................................................................................................................5
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自动识别系统 SI-30 中文操作说明书

目
录
1. 缩写.....................................................................................................................................5 2. 概要.....................................................................................................................................5
2.1.1. 主要信息 ........................................................................................

DSEI120-06A

© 2000 IXYS All rights reserved
2-2
1.4
3.0 µs 2.5 tfr 2.0 1.5 1.0 0.5
1.2 Kf 1.0
Qr
220 trr 200
IF=140A IF= 70A IF= 35A
180
30 20 10
0.8
IRM
160
0.6 140 0.4 0 50 100 TVJ °C 150 0 200 400 600 A/ 800 ms 1000 -diF/dt
Applications
q
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque
q q q
357 0.8...1.2 6
q
Nm g
q q q
Symbol
Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 70 A;
Characteristic Values typ. max. 3 0.75 20 1.12 1.3 0.85 3.5 0.35 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
35 17
50 21
x Chip capability, y limited to 70 A by leads
028
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions

DMC2004VK-7;中文规格书,Datasheet资料

COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTORFeatures• Low On-Resistance • Low Gate Threshold Voltage V GS(th) <1V • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Complementary Pair MOSFET • Ultra-Small Surface Mount Package • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • ESD Protected Gate • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-563 • Case Material: Molded Plastic, “Green” MoldingCompound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Weight: 0.006 grams (approximate)Ordering Information (Note 4)Part Number Case Packaging DMC2004VK-7SOT-563 3000/Tape & ReelNotes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2007 200820092010 20112012Code U V W X Y ZMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N De3SOT-563TOP VIEWInternal SchematicTOP VIEW BOTTOM VIEWESD protectedQ 2CAB = Product Type Marking Code YM = Date Code Marking Y = Year ex: U = 2007 M = Month ex: 9 = September GreenMaximum Ratings N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source Voltage V DSS20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D670480 mAMaximum Ratings P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic Symbol Value UnitDrain Source VoltageV DSS-20 V Gate-Source Voltage V GSS±8 V Drain Current (Note 5) T A = +25°C T A = +85°CI D-530-380 mAThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation (Note 5) P D400 mW Thermal Resistance, Junction to Ambient (Note 5) R θJA 312.5 °C/W Operating and Storage Temperature RangeT j , T STG-65 to +150 °CNote:5. Device mounted on FR-4 PCB.Electrical Characteristics N-CHANNEL – Q 1 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS 20 ⎯ ⎯V V GS = 0V, I D = 10µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ 1.0 µAV DS = 16V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) 0.5 ⎯ 1.0 V V DS = V GS , I D = 250µAStatic Drain-Source On-Resistance R DS (ON)⎯ ⎯ ⎯ 0.4 0.5 0.7 0.550.70 0.90 Ω V GS = 4.5V, I D = 540mA V GS = 2.5V, I D = 500mA V GS = 1.8V, I D = 350mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD 0.5 ⎯ 1.2 V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 150 pF V DS = 16V, V GS = 0Vf = 1.0MHz Output CapacitanceC oss ⎯ ⎯ 25 pF Reverse Transfer Capacitance C rss ⎯ ⎯ 20 pF Reverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Electrical Characteristics P-CHANNEL – Q 2 (@T A = +25°C, unless otherwise specified.)Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯V V GS = 0V, I D = -250µAZero Gate Voltage Drain Current I DSS ⎯ ⎯ -1.0 µAV DS = -20V, V GS = 0V Gate-Source LeakageI GSS ⎯ ⎯ ± 1.0µA V GS = ±4.5V, V DS = 0VON CHARACTERISTICS (Note 6) Gate Threshold VoltageV GS(th) -0.5 ⎯ -1.0 V V DS = V GS , I D = -250µAStatic Drain-Source On-Resistance R DS (ON)⎯ 0.7 1.1 1.7 0.91.42.0 Ω V GS = -4.5V, I D = -430mA V GS = -2.5V, I D = -300mA V GS = -1.8V, I D = -150mAForward Transfer Admittance |Y fs | 200 ⎯ ⎯ mS V DS =10V, I D = 0.2ADiode Forward Voltage (Note 6) V SD -0.5 ⎯ -1.2 V V GS = 0V, I S = -115mA DYNAMIC CHARACTERISTICS Input Capacitance C iss ⎯ ⎯ 175 pFV DS = -16V, V GS = 0Vf = 1.0MHzOutput CapacitanceC oss ⎯ ⎯ 30 pFReverse Transfer CapacitanceC rss⎯⎯20 pFNotes: 6. Short duration pulse test used to minimize self-heating effect.Q 1, N-CHANNELFig. 1 Typical Output CharacteristicsDS I , D R A I N C U R R E N T (A )Fig. 2 Typical Transfer CharacteristicsGS I , D R A I N C U R R E N T (A )D Fig. 3 Gate Threshold Voltage vs. Ambient TemperatureA V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)I , DRAIN CURRENT (A)Fig. 4 Static Drain-Source On-Resistancevs. Drain CurrentDI , DRAIN CURRENT (A)Fig. 5 Static Drain-Source On-Resistancevs. Drain CurrentD I , DRAIN-SOURCE CURRENT (A)Fig. 6 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 1, N-CHANNEL (cont.)T , AMBIENT TEMPERATURE (°C)Fig. 7 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 9 Forward Transfer Admittance vs. Drain Current DV , DRAIN-SOURCE VOLTAGE (V)Fig. 10 Typical CapacitanceDSQ 2, P-CHANNEL-V , DRAIN SOURCE VOLTAGE (V)Fig. 11 Typical Output CharacteristicsDS -I , D R A I N C U R R E N T (A )DFig. 12 Typical Transfer CharacteristicsGS -I , D R A I N C U R R E N T (A )D Fig. 13 Gate Threshold Voltage vs. Ambient TemperatureA -V , G A T E T H R E S H O L D V O L T A G E (V )G S (t h)-I , DRAIN-SOURCE CURRENT (A)Fig. 14 Static Drain-Source On-Resistance vs. Drain CurrentD -I , DRAIN-SOURCE CURRENT (A)Fig. 15 Static Drain-Source On-Resistance vs.Drain CurrentDFig. 16 Static Drain-Source On-Resistance vs.Drain-Source Current vs. Gate Source VoltageDQ 2, P-CHANNEL (cont.)Fig. 17 Static Drain-Source On-State Resistancevs. Ambient TemperatureAFig. 19 Forward Transfer Admittance vs. Drain CurrentD -V , DRAIN-SOURCE VOLTAGE (V)Fig. 20 Typical CapacitanceDSPackage Outline DimensionsSuggested Pad LayoutSOT563Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.100.30 0.20 M 0.10 0.18 0.11 All Dimensions in mmDimensions Value (in mm)Z 2.2 G 1.2 X 0.375 Y 0.5C11.7 C20.5 XZYC1C2C2GIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESDMC2004VK-7。

ZXMS6004FFTA;中文规格书,Datasheet资料

60V N-channel self protected enhancement mode Intellifet MOSFETSummaryContinuous drain source voltage 60 V On-state resistance500 m ΩNominal load current (V IN = 5V) 1.3 A Clamping energy90mJDescriptionThe ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6004FF is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.Features•Compact high power dissipation package •Low input current•Logic Level Input (3.3V and 5V)•Short circuit protection with auto restart •Over voltage protection (active clamp)•Thermal shutdown with auto restart •Over-current protection •Input Protection (ESD)•High continuous current ratingOrdering informationDevice Part markReel size(inches)Tape width (mm)Quantity per reelZXMS66004FFTA 1K6712 embossed3,000 unitsApplication information•Especially suited for loads with a high in-rush current such as lamps and motors.•All types of resistive, inductive and capacitive loads in switching applications.•μC compatible power switch for 12V and 24V DC applications.•Automotive rated.•Replaces electromechanical relays and discrete circuits.•Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low V DS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to self-protect at low V DS.Absolute maximum ratingsThermal resistanceNOTES(a)For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.(b)F or a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board in still air conditions.(c)Thermal resistance from junction to the mounting surface of the drain pin.ParameterSymbol Limit Unit Continuous Drain-Source voltageV DS 60V Drain-Source voltage for short circuit protection V DS(SC)36V Continuous input voltage V IN -0.5 ... +6V Continuous input current -0.2V ≤V IN ≤6VV IN <-0.2V or V IN >6VI INNo limit │I IN │≤2mAOperating temperature range T j ,-40 to +150°C Storage temperature range T stg -55 to +150°C Power dissipation at T A =25°C (a)Linear derating factorP D 0.836.66W mW/°C Power dissipation at T A =25°C (b) Linear derating factorP D 1.512.0W mW/°C Pulsed drain current @ V IN =3.3V I DM 2A Pulsed drain current @ V IN =5VI DM 2.5A Continuous source current (Body Diode) (a)I S 1A Pulsed dource current (Body Diode) I SM 5A Unclamped single pulse inductive energy, Tj=25°C, I D =0.5A, V DD =24VE AS 90mJ Electrostatic discharge (Human body model)V ESD 4000V Charged device modelV CDM 1000VParameterSymbo Value Unit Junction to ambient (a)R θJA 150°C/W Junction to ambient (b)R θJA 83°C/W Junction to case (c)R θJC44°C/WRecommended operating conditionsThe ZXMS6004FF is optimised for use with µC operating from 3.3V and 5V supplies.CharacteristicsSymbolDescriptionMinMaxUnitsV IN Input voltage range0 5.5V T A Ambient temperature range-40125°C V IH High level input voltage for MOSFET to be on 3 5.5V V IL Low level input voltage for MOSFET to be off00.7V V PPeripheral supply voltage (voltage to which load is referred)36VElectrical characteristics (at T amb = 25°C unless otherwise stated).Notes:(d)The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary.ParameterSymbol Min Typ Max Unit ConditionsStatic Characteristics Drain-Source clamp voltage V DS(AZ)606570V I D =10mA Off-state drain Ccrrent I DSS 500nA V DS =12V, V IN =0V Off-state drain current I DSS 1μA V DS =36V, V IN =0V Input threshold voltage V IN(th)0.71 1.5V V DS =V GS , I D =1mA Input current I IN 60100μA V IN =+3V Input currentI IN120200μA V IN =+5V Input current while over temperature active220μA V IN =+5VStatic Drain-Source on-state resistanceR DS(on)400600m ΩV IN =+3V, I D =0.5A Static Drain-Source on-state resistanceR DS(on)350500m ΩV IN =+5V, I D =0.5A Continuous drain current (a) I D 0.9A V IN =3V; T A =25°C Continuous drain cCurrent(a)I D 1.0A V IN =5V; T A =25°C Continuous drain current (b)I D 1.2A V IN =3V; T A =25°C Continuous drain current (b)I D 1.3AV IN =5V; T A =25°C Current limit I D(LIM)0.7 1.7A V IN =+3V,Current limit (c)I D(LIM)12.2A V IN =+5VDynamic characteristics Turn-on delay time t d(on)5μs V DD =12V, I D =0.5A, V GS =5VRise timet r 10μs Turn-off delay time t d(off)45μs Fall time f f15μsElectrical characteristics - continuedNote:(a)Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods..ParameterSymbolMinTypMaxUnitConditionsOver-temperature protection Thermal overload trip temperature (a)TJT150175°C Thermal hysteresis (a)10°CTypical characteristicsPackage information - SOT23FNote: Controlling dimensions are in millimeters. Approximate dimensions are provided in incheslimeters Inches limeters Inches Min.Max.Min.Max.Min.Max.Min.Max.A 0.80 1.000.03150.0394E 2.30 2.500.09060.0984A10.000.100.000.0043E1 1.50 1.700.05900.0669b 0.350.450.01530.0161L 0.480.680.01890.0268c 0.100.200.00430.0079L10.300.500.01530.0161D 2.803.000.11020.1181R 0.050.150.00190.0059e 0.95 ref 0.0374 ref O 0°12°0°12°e11.802.000.07090.0787-----Sales officesThe Americas3050 E. Hillcrest Drive Westlake Village,CA 91362-3154Tel: (+1) 805 446 4800 Fax: (+1) 805 446 4850EuropeKustermann-ParkBalanstraße 59,D-81541 MünchenGermanyTel: (+49) 894 549 490Fax: (+49) 894 549 4949Taiwan7F, No. 50,Min Chuan RoadHsin-TienTaipei, TaiwanTel: (+886) 289 146 000Fax: (+886) 289 146 639ShanghaiRm. 606, No.1158Changning RoadShanghai, ChinaTel: (+86) 215 241 4882Fax (+86) 215 241 4891ShenzhenANLIAN Plaza, #4018Jintian RoadFutian CBD,Shenzhen, ChinaTel: (+86) 755 882 849 88Fax: (+86) 755 882 849 99Korea6 Floor, Changhwa B/D,1005-5 Yeongtong-dong,Yeongtong-gu, Suwon-si,Gyeonggi-do, Korea 443-813Tel: (+82) 312 731 884Fax: (+82) 312 731 885DefinitionsProduct changeDiodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders.Applications disclaimerThe circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.Life supportDiodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1.are intended to implant into the bodyor2.support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected tocause the failure of the life support device or to affect its safety or effectiveness.ReproductionThe product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned.Terms and ConditionsAll products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.Quality of productDiodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: or Diodes Inc. does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.ESD(Electrostatic discharge)Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced.Green complianceDiodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions.All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives.Product status key:“Preview”Future device intended for production at some point. Samples may be available“Active”Product status recommended for new designs“Last time buy (LTB)”Device will be discontinued and last time buy period and delivery is in effect“Not recommended for new designs”Device is still in production to support existing designs and production“Obsolete”Production has been discontinuedDatasheet status key:“Draft version”This term denotes a very early datasheet version and contains highly provisional information, whichmay change in any manner without notice.“Provisional version”This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.However, changes to the test conditions and specifications may occur, at any time and without notice.“Issue”This term denotes an issued datasheet containing finalized specifications. However, changes tospecifications may occur, at any time and without notice.分销商库存信息: DIODESZXMS6004FFTA。

DSEI30-12A

0.610 0.640 0.140 0.144
0.170 0.216 0.212 0.244
0.065 0.084
-
0.177
0.040 0.055 0.426 0.433
0.185 0.209 0.016 0.031
0.087 0.102
© 1999 IXYS All rights reserved
19.81 20.32 20.80 21.46
15.75 16.26 3.55 3.65
4.32 5.49 5.4 6.2
1.65 2.13 - 4.5
1.0 1.4 10.8 11.0
4.7 5.3 0.4 0.8
2.2 2.54
Inches Min. Max.
0.780 0.800 0.819 0.845
t = 8.3 ms (60 Hz), sine
TC = 25°C Mounting torque with screw M3 Mounting torque with screw M3.5
Maximum Ratings
70 26 375
200 210
185 195
200 180
170 160
-40...+150 150
1.4
1.2
1.0
Kf
IRM
0.8
0.6 QR
0.4
0.2
0.0 0
40
80
TJ
120 °C 160
Fig. 4 Dynamic parameters versus junction temperature.
6
µC
TVJ=100°C VR= 540V
5

ZXMN6A07FTA中文资料(Diodes)中文数据手册「EasyDatasheet - 矽搜」

V ID = 250μA, V DS = V GS Ω VGS = 10V, I D = -1.8A
VGS = 4.5V, I D = -1.3A S VDS = 15V, I D = 1.8A V TJ = +25°C, I S = 0.45A, V GS = 0V ns TJ = +25°C, I F = 1.8A, nC di / dt = 100A/μs的
4. Automotive productsare AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard productsare electrically and thermally the same, except where specified.
7. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300μs- pulse current limited by maximum junction temperate 9. Thermal resistance from junction to solder-point (at the end of the drain lead).
标识信息
7N6 YM
7N6 =产品型号标识代码
芯片中文手册,看全文,戳
ZXMN6A07F
最大额定值
(@T A = + 25℃,除非另有说明.）
漏源电压门源电压
特有
连续漏电流

DSEC30-06A中文资料

-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0
0.0
0 200 400 600 A80/m0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation:
q Soft reverse recovery for low EMI/RFI
q Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Dimensions see outlines.pdf
TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C mounting torque typical
Maximum Ratings
50
A
15
A
110
A
0.1
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
95
W
0.8...1.2
Nm
6
g
Symbol
IR x
VF y
RthJC RthCH trr
IRM
Conditions

DSEP30-12A;DSEP30-12AR;中文规格书,Datasheet资料

549IXYS reserves the right to change limits, test conditions and dimensions.I FAV =30 A V RRM =1200 V t rr =40 nsV RSM V RRMTypeV V 12001200DSEP 30-12A 12001200DSEP 30-12ARSymbol ConditionsMaximum RatingsI FRMS 70A I FAVM rectangular, d = 0.5;T C (Vers. A) = 115°C30A T C (Vers. AR)= 110°C I FSM T VJ = 45°C; t p = 10 ms (50 Hz), sine 200A E AS T VJ = 25°C; non-repetitive 14mJ I AS = 11.5 A; L = 180 µHI AR V A = 1.25·V R typ.; f = 10 kHz; repetitive1.2A T VJ -55...+175°C T VJM 175°C T stg -55...+150°C P tot T C = 25°C165W M d *mounting torque0.8...1.2Nm F C mounting force with clip20...120N V ISOL **50/60 Hz RMS; I ISOL ≤ 1 mA; leads-to-tab 2500V~Weight typical 6g* Version A only; ** Version AR onlySymbol ConditionsCharacteristic Values typ.max.I R①T VJ = 25°C;V R = V RRM 250µA T VJ = 150°C;V R = V RRM 1mA V F ②I F = 30 A;T VJ = 150°C 1.79V T VJ = 25°C2.74V R thJC Version A 0.9K/W Version AR1.1K/W R thCH 0.25K/W t rr I F = 1 A; -di/dt = 200 A/µs;40nsV R = 30 V; T VJ = 25°CI RMV R = 100 V;I F = 50 A; -di F /dt = 100 A/µs 8.511.4AT VJ = 100°CHiPerFRED TM Epitaxial Diodewith soft recoveryFeatures•International standard package •Planar passivated chips •Very short recovery time•Extremely low switching losses •Low I RM -values•Soft recovery behaviour •Epoxy meets UL 94V-0•Version ..R isolated and UL registered E153432Applications•Antiparallel diode for high frequency switching devices •Antisaturation diode •Snubber diode•Free wheeling diode in converters and motor control circuits•Rectifiers in switch mode power supplies (SMPS)•Inductive heating•Uninterruptible power supplies (UPS)•Ultrasonic cleaners and welders Advantages•Avalanche voltage rated for reliable operation•Soft reverse recovery for low EMI/RFI •Low I RM reduces:-Power dissipation within the diode -Turn-on loss in the commutating switchDimensions see Outlines.pdfPulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0%② Pulse Width = 300 µs, Duty Cycle < 2.0%Data according to IEC 60747 and per diode unless otherwise specified.A = Anode, C = CathodeTO-247 ADISOPLUS 247TMVersion AVersion ARAC AC CA549IXYS reserves the right to change limits, test conditions and dimensions.0.00.40.81.2010203040506070I F A t fr µs Fig. 3Peak reverse current I RMversus -di F /dtFig. 2Reverse recovery charge Q rversus -di F /dtFig. 1Forward current I F versus V FFig. 6Peak forward voltage V FR and t frversus di F /dt Fig. 7Transient thermal resistance junction to caseConstants for Z thJC calculation ..A:i R thi (K/W)t i (s)10.4650.005220.1790.000330.2560.0397NOTE: Fig. 2 to Fig. 6 shows typical valuesConstants for Z thJC calculation ..AR:i R thi (K/W)t i (s)10.3680.005220.14170.000330.02950.000440.56040.0092分销商库存信息:IXYSDSEP30-12A DSEP30-12AR。

DSEP60-06A中文资料

Fig. 2 Reverse recovery charge Qr versus -diF/dt
140 ns 130
Fig. 3 Peak reverse current IRM versus -diF/dt
20 V VFR 15 1.6 µs tfr 1.2
2.0
TVJ= 100°C VR = 300V
Dimensions see outlines.pdf
© 2000 IXYS All rights reserved
1-2
018
IXYS reserves the right to change limits, test conditions and dimensions.
元器件交易网
Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 mA mA V V K/W K/W y RthJC RthCH trr IRM
Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
DSEP 60-06A DSEP 60-06AT
160 A 140 IF 120 4000 nC 3000

ZXMP6A13FTA;中文规格书,Datasheet资料

A Product Line ofDiodes IncorporatedZXMP6A13F60V P-CHANNEL ENHANCEMENT MODE MOSFETProduct SummaryV (BR)DSSR DS(on)I D T A = 25°C -60V400m Ω @ V GS = -10V -1.1A 600m Ω @ V GS = -4.5V-0.9ADescription and ApplicationsThis MOSFET utilizes a unique structure that combines the benefitsof low on-resistance with fast switching speed, making it ideal forhigh-efficiency power management applications.• DC - DC converters • Power management functions• Relay and solenoid driving• Motor controlFeatures and Benefits• Fast switching speed • Low input capacitance • Low gate charge• “Lead Free”, RoHS Compliant (Note 1)• Halogen and Antimony Free. "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT23 • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish annealed over Copper leadframeSolderable per MIL-STD-202, Method 208 • Weight: 0.008 grams (approximate)Ordering Information (Note 3)Product Marking Reel size (inches) Tape width (mm)Quantity per reel ZXMP6A13FTA7P6 7 8 3000UnitsNotes: 1. No purposefully added lead2. Diodes Inc's "Green" policy can be found on our website at .3. For packaging details, go to our website at .Marking InformationTop View Equivalent Circuit 7P6 = Product Type Marking CodeTop ViewPin Out D SG 7P6SOT23Maximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnits Drain-Source Voltage V DSS-60 VGate-Source Voltage V GS±20 VContinuous Drain Current V GS = 10V(Note 5)T A = 70°C (Note 5)(Note 4)I D-1.1-0.8-0.9APulsed Drain Current (Note 6) I DM-4.0 A Continuous Source Current (Body Diode) (Note 5) I S-1.2 APulsed Source Current (Body Diode) (Note 6) I SM-4.0 AThermal Characteristics@T A = 25°C unless otherwise specifiedCharacteristic SymbolValueUnitPower Dissipation (Note 4)Linear Derating Factor P D 6255mWmW/°CPower Dissipation (Note 5)Linear Derating Factor P D 8066.5mWmW/°CThermal Resistance, Junction to Ambient (Note 4) RθJA200 °C/W Thermal Resistance, Junction to Ambient (Note 5) RθJA155 °C/W Operating and Storage Temperature Range T J, T STG-55 to +150 °CNotes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width =10μs - pulse current limited by maximum junction temperature.Thermal CharacteristicsSafe Operating Area204060801001201401600.00.10.20.30.40.50.60.7Derating CurveTemperature (°C)M a x P o w e r D i s s i p a t i o n (W )050100150200Transient Thermal ImpedanceT h e r m a l R es i s t a n c e (°C /W )Pulse Width (s)110Pulse Power DissipationPulse Width (s)M a x i m u m P o w e r (W )Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit Test ConditionOFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS -60 ⎯ ⎯ V I D = -250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS ⎯ ⎯ -0.5 μA V DS = -60V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage V GS(th) -1.0 ⎯ -3.0 V I D = -250μA, V DS = V GSStatic Drain-Source On-Resistance (Note 7) R DS (ON) ⎯ ⎯0.400 Ω V GS = -10V, I D = -0.9A0.600 V GS = -4.5V, I D = -0.8AForward Transconductance (Notes 7 and 9) g fs ⎯ 1.8 ⎯ S V DS = -15V, I D = -0.9ADiode Forward Voltage (Note 7) V SD⎯ -0.85 -0.95 V T J = 25°C, I S = -0.8A, V GS = 0V Reverse Recovery Time (Note 9) t rr ⎯ 21.1 ⎯ ns T J = 25°C, I F = -0.9A,di/dt = 100A/μs Reverse Recovery Charge (Note 9) Q rr⎯ 19.3 ⎯ nC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss⎯ 219 ⎯ pF V DS = -30V, V GS = 0Vf = 1.0MHzOutput Capacitance C oss⎯ 25.7 ⎯ Reverse Transfer Capacitance C rss ⎯ 20.5 ⎯ Turn-On Delay Time (Note 8) t D(on) ⎯ 1.6 ⎯ nsV DD = -30V, I D = -1A,R G ≅ 6.0Ω, V GS = -10V Turn-On Rise Time (Note 8) t r ⎯ 2.2 ⎯ Turn-Off Delay Time (Note 8) t D(off)⎯ 11.2 ⎯ Turn-Off Fall Time (Note 8) t f⎯ 5.7 ⎯ Total Gate Charge (Note 8) Q g⎯ 2.9 ⎯ nC V DS = -30V, V GS = -4.5V,I D = -0.9ATotal Gate Charge (Note 8) Q g ⎯ 5.9 ⎯nC V DS = -30V, V GS = -10V,I D = -0.9AGate-Source Charge (Note 8) Q gs ⎯ 0.74 ⎯Gate-Drain Charge (Note 8) Q gd ⎯ 1.5 ⎯Notes: 7. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature.9. For design aid only, not subject to production testing.Typical Characteristics0.11100.1110Output Characteristics-I D D r a i n C u r r e n t (A )-V DS Drain-Source Voltage (V)Output Characteristics-I D D r a i n C u r r e n t (A )-V DS Drain-Source Voltage (V)Normalised Curves v TemperatureN o r m a l i s e d R D S (o n ) a n d V G S (t h )Tj Junction Temperature (°C)On-Resistance v Drain Current R D S (o n -I D Drain Current (A)-I S D R e v e r s e D r a i n C u r r e n t (A )Typical Characteristics - continued-VDS- Drain - Source Voltage (V)Gate-Source Voltage v Gate Charge Capacitance v Drain-Source VoltageQ - Charge (nC)-VGSGate-SourceVoltage(V)Test CircuitsCurrentGate charge test circuitSwitching time test circuitBasic gate charge waveformSwitching time waveformsV DSGV GSVDDVDSPackage Outline DimensionsSuggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息: DIODESZXMP6A13FTA。

LDA201S, 规格书,Datasheet 资料

Dual Optocouplers, Unidirectional InputSingle-Transistor OutputLDA201e 3PbApplicationsFeaturesDescriptionOrdering InformationPin Configuration• T elecom Switching • Tip/Ring Circuits• Modem Switching (Laptop, Notebook, Pocket Size)• Loop Detect • Ringing Detect • Current Sensing• 100mA Continuous Load Rating • 3750V rms Input/Output Isolation • Unidirectional Input • Small 8-Pin Package• Machine Insertable, Wave SolderableLDA201 is a dual optocoupler with unidirectional inputs and single-transistor outputs. Current transfer ratios range from 33% to 1000% with a typical value of 300%.ApprovalsE EC C A K KA • UL Recognized Component: File E76270• CSA Certified Component: Certificate 1175739• EN/IEC 60950-1 Certified Component: TUV Certificate B 09 07 49410 006Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied.Absolute Maximum Ratings @ 25ºC2 Derate linearly 2mW / ºCElectrical Characteristics @ 25ºCSwitching Characteristics @ 25ºCSwitching Time Test CircuitVVCEI FPulse Width=5ms Duty Cycle=1%PERFORMANCE DATA**The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written speciﬁ cations, please contact our application department.LED Forward Voltage (V)1.01.11.2 1.3 1.4 1.5 1.6L E D F o r w a r d C u r r e n t (m A )010********LED Voltage vs. Current (Linear)(T=25ºC)LED Forward Voltage (V)1.01.11.2 1.3 1.4 1.5 1.6L E D F o r w a r d C u r r e n t (m A )0.1110100LED Voltage vs. Current (Log)(T =25ºC)Temperature (ºC)-40-2020406080100L E D F o r w a r d V o l t a g e (V )1.01.11.21.31.41.51.6LED Forward Voltage vs. TemperatureLED Forward Current (mA)0102030405060C u r r e n t T r a n s f e r R a t i o (%)100200300400500600700Typical CTR vs. LED Forward Current(V =5V, T =25ºC)Collector Voltage (V)123456C o l l e c t o r C u r r e n t (m A )20406080100Typical Collector Current vs.Collector Voltage(T =25ºC)Temperature (ºC)I C E C u r r e n t (m A )I CE Current vs. Temperature(V=5V)20406080100Temperature (ºC)-40-20020406080100S a t u r a t i o n V o l t a g e (V )0.080.100.120.140.160.180.20Saturation Voltage vs. Temperature(I =2mA, I=1mA)Temperature (ºC)-40-20020406080100B l o c k i n g V o l t a g e (V P )87888990919293949596Blocking Voltage vs. TemperatureTemperature (ºC)-40-20020406080100L e a k a g e C u r r e n t (n A )0100200300400500Collector Leakage Currentvs. TemperatureLoad Resistance (:)1001k10k 100k1M T u r n -O n T i m e (P s )02468101214Turn-On Time vs. Load Resistance(V =5V, T =25ºC)Load Resistance (k :)0100200300400500600T u r n -O f f T i m e (m s )246810Turn-Off Time vs. Load Resistance(V =5V, T =25ºC)Manufacturing InformationMoisture SensitivityAll plastic encapsulated semiconductor packages are susceptible to moisture ingression. Clare classified allof its plastic encapsulated devices for moisture sensitivity according to the latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee proper operation of our devices when handled according to the limitations and information in that standard as well as to any limitations set forth in the information or standards referenced below.Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced product performance, reduction of operable life, and/or reduction of overall reliability.This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.ESD SensitivityThis product is ESD Sensitive, and should be handled according to the industry standard JESD-625. Reflow ProfileThis product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020 must be observed.Board WashClare recommends the use of no-clean flux formulations. However, board washing to remove flux residue is acceptable. Since Clare employs the use of silicone coating as an optical waveguide in many of its optically isolated products, the use of a short drying bake may be necessary if a wash is used after solder reflow processes. Chlorine-based or Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be used.e3PbMECHANICAL DIMENSIONS LDA201LDA201SDimensionsmm(inches)PCB Hole Pattern9.652 ± 0.3817.620 ± 0.254(0.01)Dimensionsmm(inches)PCB Land Pattern1.65Clare, Inc. makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses nor indemnity are expressed or implied. Except as set forth in Clare’s Standard T erms and Conditions of Sale, Clare, Inc. assumes no liability whatsoever, and disclaims any express or implied warranty, relating to its products including, but not limited to, the implied warranty of merchantability, fitness for a particular purpose, or infringement of any intellectual property right.The products described in this document are not designed, intended, authorized or warranted for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or where malfunction of Clare’s product may result in direct physical harm, injury, or death to a person or severe property or environmental damage. Clare, Inc. reserves the right to discontinue or make changes to its products at any time without notice.Specification: DS-LDA201-R04©Copyright 2011, Clare, Inc.All rights reserved. Printed in USA.For additional information please visit our website at: 6MECHANICAL DIMENSIONS (Cont.)LDA201S Tape & ReelDimensionsmm (inches)K 1 =4.20(0.165)0 K(0.193)。

DSR6V600D1-13;中文规格书,Datasheet资料

IFSM
DSR6V600D1
Value
Unit
600
V
6
A
60
A
NEW PRODUCT
Thermal Characteristics
Characteristic Maximum Thermal Resistance Thermal Resistance Junction to Case (Note 3) Thermal Resistance Junction to Ambient (Note 3) Operating and Storage Temperature Range
Solderable per MIL-STD-202, Method 208 • Weight: 0.4 grams (approximate)
Top View
3
Package Pin Out Configuration
Ordering Information (Note 2)
Notes:
Part Number DSR6V600D1-13
IF(AV), AVERAGE FORWARD CURRENT (A)
0.01 0 100 200 300 400 500 600 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 3 Typical Reverse Characteristics
9
8
7
Based on Lead Temp (TL)
1,000
DSR6V600D1
1,000
CT, TOTAL CAPACITANCE (pF)
NEW PRODUCT
IR, INSTANTANEOUS REVERSE CURRENT (µA)

ES3DB中文资料(Diodes)中文数据手册「EasyDatasheet - 矽搜」

120
Single Half-Sine-Wave
100
80 60
40
20 ,峰FS值M 正向浪涌电流（A）
I0 1
10
100
循环次数在60Hz
图. 3浪涌电流降额曲线
ES3A/AB - ES3D/DB
1,000
TJ = 125 °C
100
10
TJ = 25 °C
I,瞬R 时反1.向0 电0 流（μA） 40
司及其附属公司保留权利作出修改 ,增强,改进,修正或其他变化,恕不另行通知本文档及其所涉及的产品的权利 . Diodes公司不承担因使用或应用本文档或本文所述的任何产品的任何责任;既没有Diodes公司转达根据其专利权或商标权的任何执照,也没有他人的权利.本文件或在这类应用产品本文所述的任何客户或用户应承担所有使用风险 ,并同意举行Diodes公司,其产品代表在Diodes公司的网站,反对一切损害无害的所有公司.
平均整流电流anote10102510050751251501正向电流降额曲线175001040812162典型正向特性芯片中文手册看全文戳easydscnes3aabfsm峰值正向浪涌电流a120singlehalfsinewave10001008010060401040801201999额定峰值反向电压百分比4典型的反向特性10循环次数在60hz3浪涌电流降额曲线1005反向恢复时间特性和测试电路封装外形尺寸封装外形尺寸smbdimminmax330394406457196221015031500559005020076152200250在毫米所有尺寸在毫米所有尺寸smcdimminmax559622660711275318015031775813010020076152200250在毫米所有尺寸在毫米所有尺寸芯片中文手册看全文戳easydscnes3aabes3ddb建议焊盘布局建议焊盘布局smb值单位值单位mm尺寸尺寸43smc值单位值单位mm尺寸尺寸68重要的提醒重要的提醒公司不做任何明示不作出任何保证或暗示的关于这一文件包括但不限于适销性和针对特定用途的隐含担保及其任何司法管辖范围内的法律等效

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Maximum Ratings 70 37 375 300 320 260 280 450 420 340 320 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s °C °C °C W Nm g
Features
q
q q q q
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45°C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
Байду номын сангаас
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
2-2
/
分销商库存信息:
IXYS DSEI30-06A
TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque
Applications
q
q q q
125 0.8...1.2 6
q
© 2000 IXYS All rights reserved
1-2
/
009
DSEI 30, 600 V
Fig. 1 Forward current versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Symbol IFRMS IFAVM ÿÿx IFRM IFSM
Test Conditions TVJ = TVJM TC = 85°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
Symbol
Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 37 A;
Characteristic Values typ. max. 100 50 7 1.4 1.6 1.01 7.1 1 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 350 V; IF = 30 A; -diF/dt = 240 A/ms L £ 0.05 mH; TVJ = 100°C
35 10
50 11
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
IR
VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM TVJ = 150°C TVJ = 25°C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
Dimensions
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54
Fig. 3 Peak reverse current versus -diF/dt.
Fig. 4 Dynamic parameters versus junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus diF/dt.
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
Fast Recovery Epitaxial Diode (FRED)
DSEI 30
IFAVM = 37 A VRRM = 600 V trr = 35 ns
VRSM V 640
VRRM V 600
Type
A
C
TO-247 AD
C
DSEI 30-06A
A
C
A = Anode, C = Cathode