GQM1875C2E2R0BB12D;中文规格书,Datasheet资料

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APT15GN120BD_SDQ1(G) 商品说明书

050-7598 R e v C 7-2009TYPICAL PERFORMANCE CURVESMAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise speciﬁ ed.STATIC ELECTRICAL CHARACTERISTICSCharacteristic / Test ConditionsCollector-Emitter Breakdown Voltage (V GE = 0V , I C = 0.5mA)Gate Threshold Voltage (V CE = V GE , I C = 600µA, T j= 25°C)Collector-Emitter On Voltage (V GE = 15V , I C = 15A, T j = 25°C)Collector-Emitter On Voltage (V GE = 15V , I C = 15A, T j = 125°C)Collector Cut-off Current (V CE = 1200V , V GE = 0V , T j = 25°C) 2Collector Cut-off Current (V CE = 1200V , V GE = 0V , T j = 125°C) 2Gate-Emitter Leakage Current (V GE = ±20V)Intergrated Gate ResistorSymbol V (BR)CES V GE(TH)V CE(ON)I CES I GES R GINTUnitsVoltsµA nA ΩSymbol V CES V GE I C1I C2I CM SSOA P D T J ,T STGT LAPT15GN120BD_SDQ1(G)1200±3045224545A @ 1200V195-55 to 150300UNIT VoltsAmpsWatts °CParameterCollector-Emitter Voltage Gate-Emitter VoltageContinuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1Switching Safe Operating Area @ T J = 150°C T otal Power DissipationOperating and Storage Junction T emperature RangeMax. Lead T emp. for Soldering: 0.063" from Case for 10 Sec.CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.Utilizing the latest Field Stop and T rench Gate technologies, these IGBT's have ultralow V CE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefﬁ cient. Low gate charge simpliﬁ es gate drive design and minimizes losses.• 1200V Field Stop• Trench Gate: Low V CE(on) • Easy ParallelingApplications : Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMIN TYP MAX 12005.0 5.86.5 1.4 1.7 2.1 2.0200TBD 120N/AMicrosemi Website - APT15GN120BDQ1 APT15GN120SDQ1APT15GN120BDQ1(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish.050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471.4 E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery currentadding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁ gure 21, but with a Silicon Carbide diode.5 E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchingloss. (See Figures 21, 22.)6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)7 R G is external gate resistance, not including R Gint nor gate driver impedance. (MIC4452)Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained herein.THERMAL AND MECHANICAL CHARACTERISTICSUNIT °C/W gmMIN TYP MAX.641.185.9CharacteristicJunction to Case (IGBT)Junction to Case (DIODE)Package WeightSymbol R θJC R θJC W TDYNAMIC CHARACTERISTICSSymbol C ies C oes C res V GEP Q g Q ge Q gc SSOA t d(on)t r t d(off)t f E on1E on2E off t d(on)t r t d(off)t f E on1E on2E offTest Conditions Capacitance V GE = 0V , V CE = 25Vf = 1 MHz Gate Charge V GE = 15V V CE = 600V I C = 15AT J = 150°C, R G = 4.3Ω 7, V GE =15V , L = 100µH,V CE = 1200VInductive Switching (25°C)V CC = 800V V GE = 15V I C = 15A R G= 4.3Ω 7T J = +25°CInductive Switching (125°C)V CC = 800V V GE = 15V I C = 15A R G= 4.3Ω 7T J = +125°C Characteristic Input Capacitance Output CapacitanceReverse T ransfer Capacitance Gate-to-Emitter Plateau Voltage T otal Gate Charge 3 Gate-Emitter ChargeGate-Collector ("Miller") Charge Switching Safe Operating Area T urn-on Delay Time Current Rise Time T urn-off Delay Time Current Fall TimeT urn-on Switching Energy 4T urn-on Switching Energy (Diode) 5T urn-off Switching Energy 6 T urn-on Delay Time Current Rise Time T urn-off Delay Time Current Fall TimeT urn-on Switching Energy 4 4T urn-on Switching Energy (Diode) 55T urn-off Switching Energy 66MIN TYPMAX1200 65 50 9.0 90 5 55 4510 9 150 110 410 73095010 9 170 1854751310 1300UNITpFV nC Ans µJns µJ050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVESV CE , COLLECTER-TO-EMITTER VOLT AGE (V)V CE , COLLECTER-TO-EMITTER VOLTAGE (V)FIGURE 1, Output Characteristics(T J = 25°C) FIGURE 2, Output Characteristics (T J = 125°C) V GE , GATE-TO-EMITTER VOLTAGE (V)GATE CHARGE (nC)FIGURE 3, Transfer CharacteristicsFIGURE 4, Gate ChargeV GE , GATE-TO-EMITTER VOLTAGE (V) T J , Junction Temperature (°C)FIGURE 5, On State Voltage vs Gate-to- Emitter VoltageFIGURE 6, On State Voltage vs Junction Temperature T J , JUNCTION TEMPERATURE (°C)T C , CASE TEMPERATURE (°C)FIGURE 7, Breakdown Voltage vs. Junction TemperatureFIGURE 8, DC Collector Current vs Case TemperatureB VC E S , C O L L E C T O R -T O -E M I T T E R B R E A KD O W N V CE , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )I C , C O L L E C T O R C U R R E N T (A )V O L T A G E (N O R M A L I Z E D )I C , D C C O L L E C T O R C U R R E N T (A ) V C E , C O L L E C T O R -T O -E M I T T E R V O L T A G E (V ) V G E , G A T E -T O -E M I T T E R V O L T A G E (V )I C , C O L L E C T O R C U R R E N T (A )1.101.051.000.950.90-50 -25 0 25 50 75 100 125-50 -25 0 25 50 75 100 125 150605040302010050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)S W I T C H I N G E N E R G Y L O S S E S (µJ ) E O N 2, T U R N O N E NE R G Y L O S S (µJ )t r , R I S E T I M E (n s )t d (O N ), T U R N -O N D E L A Y T I M E (ns )S W I T C H I N G E N E R G Y LO S S E S (µJ ) E O F F , T U R N O F F E N E R G YL O S S (µJ )t f , F A L L T I M E (n s )t d (O F F ), T U R N -O F FD E L A Y T I M E (n s )I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current I CE , COLLECTOR TO EMITTER CURRENT (A) I CE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current I CE , COLLECTOR TO EMITTER CURRENT (A)I CE , COLLECTOR TO EMITTER CURRENT (A)FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current R G , GATE RESISTANCE (OHMS)T J , JUNCTION TEMPERATURE (°C)FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature12108642016141210864230002500200015001000500500045004000350030002500200015001000500020018016014012010080604020030025020015010050035003000250020001500100050003500300025002000150010005000050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES5045403530252015105C , C A P A C I T A N C E (PF )I C , C O L L E C T O R C U R R E N T (A )V CE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) V CE , COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter VoltageFigure 18,Minimim Switching Safe Operating Area0 200 400 600 800 1000 1200 1400Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECT ANGULAR PULSE DURATION (SECONDS)Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse DurationF M A X , O P E R A T I NG F R E Q U E N C Y (kH z )I C , COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current14010050106050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)Figure 22, Turn-on Switching Waveforms and Deﬁ nitionsFigure 23, Turn-off Switching Waveforms and Deﬁ nitionsT J = 125°CCollector CurrentCollector VoltageGate VoltageSwitching Energy5%10%t d(on)90%10%t r5%T J = 125°CCollector VoltageCollector CurrentGate VoltageSwitching Energy90%t d(off)10%t f90%V050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES Characteristic / Test ConditionsMaximum Average Forward Current (T C = 127°C, Duty Cycle = 0.5)RMS Forward Current (Square wave, 50% duty)Non-Repetitive Forward Surge Current (T J = 45°C, 8.3ms)Symbol I F (AV)I F (RMS)I FSM SymbolV FCharacteristic / Test ConditionsI F = 15A Forward Voltage I F = 30AI F = 15A, T J = 125°CSTATIC ELECTRICAL CHARACTERISTICSUNITAmpsUNITVolts MINTYPMAX2.82.42.45A PT15GN120BD_SDQ1(G)1529110DYNAMIC CHARACTERISTICSMAXIMUM RATINGSAll Ratings: T C = 25°C unless otherwise speciﬁ ed.ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODEMINTYPMAX-21 -240 -260- 3 - -290 -960- 6 - -130- 1340 -19UNITns nC Amps ns nC Amps ns nC AmpsCharacteristicReverse Recovery Time Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery ChargeMaximum Reverse Recovery CurrentSymbol t rr t rr Q rr I RRM t rr Q rr I RRM t rr Q rr I RRMTest ConditionsI F = 15A, di F /dt = -200A/µs V R = 800V , T C = 25°CI F = 15A, di F /dt = -200A/µs V R = 800V , T C = 125°CI F = 15A, di F /dt = -1000A/µs V R = 800V , T C = 125°CI F = 1A, di F /dt = -100A/µs, V R = 30V , T J = 25°C Z θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (seconds)FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)1 10 100 2008070605040302010C J , J U N C T I O N C A P A C I T A N C E K f ,D Y N A M I C P A R A ME T E R S(p F )(N o r m a l i z e d t o 1000A /µs )I F (A V ) (A )T J , JUNCTION TEMPERATURE (°C)Case Temperature (°C)Figure 29. Dynamic Parameters vs. Junction TemperatureFigure 30. Maximum Average Forward Current vs. CaseTemperatureV R , REVERSE VOLTAGE (V)Figure 31. Junction Capacitance vs. Reverse VoltageQ r r , R E V E R S E R E C O V E R Y C H A R G E I F , F O R W A R D C U R R E N T (n C )(A )I R R M , R E V E R S E R E C O V E R Y C U R R E N T t r r , R E V E R S E R E C O V E R Y T I M E (A )(n s )V F , ANODE-TO-CATHODE VOLT AGE (V)-di F /dt, CURRENT RATE OF CHANGE(A/µs)Figure 25. Forward Current vs. Forward VoltageFigure 26. Reverse Recovery Time vs. Current Rate of Change-di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change Figure 28. Reverse Recovery Current vs. Current Rate of Change050-7598 R e v C 7-2009APT15GN120BD_SDQ1(G)TYPICAL PERFORMANCE CURVES51234di F /dt - Rate of Diode Current Change Through Zero Crossing.I F - Forward Conduction CurrentI RRM - Maximum Reverse Recovery Current.t rr - Reverse R ecovery Time, measured from zero crossing where Q rr - Area Under the Curve Defined by I RRM and t rr .line through I RRM and 0.25 I RRM passes through zero.Figure 32. Diode Test CircuitFigure 33, Diode Reverse Recovery Waveform and Definitions30 D.U.T.+18V 0VV rTO -247 P ackage OutlineDimensions in Millimeters and (Inches){3 Plcs}Dimensions in Millimeters (Inches)and Leads are PlatedD 3PAK Package Outlinee1 SAC: Tin, Silver, Coppere3 SAC: Tin, Silver, Copper(Cathode)(Anode)t h o d e )Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,5834,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.(Cathode)(Anode)。

杰威尔电子0603包装LED光源数据表说明书

Max.
285.0 --------535 -----
3.95 50
Unit Condition
mcd
deg
nm
nm
IF=20mA
nm V
μA
VR=5V
Everlight Electronics Co., Ltd. Device No:SZDSE-193-G06
Prepared date: 07-27-2005
∫ 5 min
300 Cycles 22 PCS. 0/1
L : -40℃ 15min
H : +100℃ 5min
3
Thermal Shock
∫ 10 sec
300 Cycles 22 PCS. 0/1
L : -10℃ 5min
High Temperature
4
Storage
5
Low Temperature
Rev. 2
Page: 4 of 10
Prepared by: Hao Liu
EVERLIGHT ELECTRONICS CO.,LTD.
19-213/GHC-YR1S2M/3T
Typical Electro-Optical Characteristics Curves
Everlight Electronics Co., Ltd. Device No:SZDSE-193-G06
EVERLIGHT ELECTRONICS CO.,LTD.
Package Outline Dimensions
19-213/GHC-YR1S2M/3T
-
+
Note: The tolerances unless mentioned is ±0.1mm ,Unit = mm

VT200F-12.5PF20PPM;中文规格书,Datasheet资料

1.ScopeThese specifications apply to QUARTZ CRYSTAL RESONATORS ( hereinafterreferred to as RESONATORS ) to be manufactured by Seiko Instruments Inc.it shall be amicably settled between both parties.9.Effectiveness of the specificationsThese specifications are effective after receipt of returned copies with yourapproved sign.1•n The maximum ratingItemSymbol Rating 1Storage•temperature•range Tsto -30•+70•2Maximum drive levelDL max1.0 µW•max.m 2•n Recommended Operating ConditionItemSymbol Rating 1Operating temperature range Tope -10•+60•2Drive•levelDL0.1 µW typ.m 3•n Erectrical -CharacteristicsMeasurement temperature •F 25±2•ItemSymbolSpecifications 1Nominal frequency F 032.768 kHz 2Frequency tolerance ∆f/f 0± 20 × 10-63Load capacitanceC L 12.5 pF 4Equivalent series resistanceR 150 k Ω max.Measured with ATI 4192A Impedance analyzer.OSC LEVEL = 0.1V5Q-valueQ 40 × 103min.calculated with the following equation•F Q=(2π F‚E L 1)/R 16Motional capacitance C 1 2.0 fF typ.7Shunt•capacitanceC 00.9 pF typ.Measured with ATI 4192A Impedance analyzer.OSC LEVEL = 0.1V8Turnover temperature Tp 25 ± 5•Measure this coefficient at 3 points of 10•A 25•A and 40• using 9Temperature coefficient k (-3.5±0.8)×10-8/•2C-MOS sircuit.10Aging∆f/f 0± 5 × 10-6/ year 25±3•A First year11Insulation resistanceIR500 M Ω min.Measured with ATI 4329A Insulation Resistance Meter.Apply DC100V.(continued)ConditionsNoteNoteNote:1. The adove tests no. 1 to 9 must be conducted independently (not series tests)2. *1: Measure after 24 hours soak at room temperature .3. *2: Measure after 2 hours soak at room temperature .4. R1 is 60kΩ max. after the each above tests.4/6［5］　Precautions(1)Temperature for soldering the lead wire shall not exceed 300℃ and thesoldering time shall be within 5 seconds.(2)Position to be soldered :Solder only the position where the lead wire is 1.0mm away from the glass seal.Do not solder the case.(3)Cutting, bending andcorrection of lead wire :The glass seal shall be free of any crack or otherdamage which may deteriorate the characteristics of RESONATORS.［6］　Outgoing inspection standard・The outgoing inspection shall be conducted as per the following standard .・The sampling shall be performed according to the ANSI/ASQCZ1.4-1996 .No Sampling levelAQL(%)1Frequency tolerance 1.02Equivalent series resistance 1.03Outer appearance 1.54Others characteristicsPeriodical quality inspectionItemⅠⅠⅠArticle method and packing structureP DBag checkmate packing specification 1)White ball case (the inner compartment) the packing structure=500 pieces / bag × 2 bags / 1 frame × 10 frame=10,000 pieces (MAX.)y Figure 1•D Outer case packing specification (the sectional plan) •y Figure 3 •z1)The number of Carton case (the outer case) size and white ball case (the inner compartment)y Table 1 •z y Figure 2•zy Table 1 •The outer case r a S f Q l i W carton case 1 box 3 boxes10 boxes Q O boxesy Figure 2•Figure 3•3. Sample of the label display (display department, please refer to •y Figure 1 •z y Figure 2•z )PART VT-200-Fo q s: Our company product name Product bar code LOTNo.k n s No.: Lot No. display Quantity 10•C 000 pcsQuantity : QuantityItem bar code *Calibre32.768kHzCalibre : Frequency, CL value, F0 deviation 12.5pF /±20•10-6Remarks: Marking etc. QuantityRemarks *: Item codeLot. No. bar code4•D Storage environmentA product avoids the direct ray and please store with the normal temperature and humidity .Conformance in (the standard condition of the JIS Z8703 test place)c i W carton case•Number of white ballcase After sealing with heat process the upper part of the Polyethylene bag ,put it to the left box.分销商库存信息: SEIKOVT200F-12.5PF20PPM。

onsemi 2n7002k-d 数据表说明书

DATA SHEETSmall Signal MOSFET60 V, 380 mA, Single, N−Channel, SOT−232N7002K, 2V7002KFeatures•ESD Protected•Low R DS(on)•Surface Mount Package•2V Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC−Q101 Qualified andPPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHSCompliantApplications•Low Side Load Switch•Level Shift Circuits•DC−DC Converter•Portable Applications i.e. DSC, PDA, Cell Phone, etc.MAXIMUM RATINGS (T J = 25°C unless otherwise stated)Rating Symbol Value UnitDrain−to−Source Voltage V DSS60VGate−to−Source Voltage V GS±20VDrain Current (Note 1)Steady State 1 sq in Pad T A = 25°CT A = 85°C I D380270mADrain Current (Note 2)Steady State Minimum Pad T A = 25°CT A = 85°C I D320230mAPower Dissipation Steady State 1 sq in PadSteady State Minimum Pad P D420300mWPulsed Drain Current (t p = 10 m s)I DM 5.0AOperating Junction and Storage Temperature Range T J, T STG−55 to+150°CSource Current (Body Diode)I S300mA Lead Temperature for Soldering Purposes(1/8″ from case for 10 s)T L260°C Gate−Source ESD Rating(HBM, Method 3015)ESD2000VStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.2.Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.Device Package Shipping†ORDERING INFORMATION2N7002KT1G,2V7002KT1G3000 / Tape & Reel SIMPLIFIED SCHEMATICSOT−23CASE 318STYLE 21704 M GGMARKING DIAGRAM& PIN ASSIGNMENT321DrainGate SourceSOT−23(Pb−Free)60 V1.6 W @ 10 VR DS(on) MAX380 mAI D MAXV(BR)DSS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.2.5 W @ 4.5 VDrain(Top View)704= Specific Device Code*M= Date Code*G= Pb−Free Package2N7002KT7G3500 / Tape & ReelSOT−23(Pb−Free)*Specific Device Code, Date Code or overbarorientation and/or location may vary depend-ing upon manufacturing location. This is arepresentation only and actual devices maynot match this drawing exactly.(Note: Microdot may be in either location)THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Junction−to−Ambient − Steady State (Note3)R q JA300°C/W Junction−to−Ambient − t ≤ 5 s (Note 3)92Junction−to−Ambient − Steady State (Note4)417Junction−to−Ambient − t ≤ 5 s (Note 4)1543.Surface−mounted on FR4 board using 1 sq in pad size with 1 oz Cu.4.Surface−mounted on FR4 board using 0.08 sq in pad size with 1 oz Cu.ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise specified)Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V(BR)DSS V GS = 0 V, I D = 250 m A60V Drain−to−Source Breakdown VoltageTemperature CoefficientV(BR)DSS/T J71mV/°CZero Gate Voltage Drain Current I DSS VGS = 0 V,V DS = 60 V T J = 25°C1m A T J = 125°C10V GS = 0 V,V DS = 50 VT J = 25°C100nA Gate−to−Source Leakage Current I GSS V DS = 0 V, V GS = ±20 V±10m AV DS = 0 V, V GS = ±10 V450nAV DS = 0 V, V GS = ±5.0 V150nA ON CHARACTERISTICS (Note 5)Gate Threshold Voltage V GS(TH)V GS = V DS, I D = 250 m A 1.0 2.3V Negative Threshold TemperatureCoefficientV GS(TH)/T J 4.0mV/°C Drain−to−Source On Resistance R DS(on)V GS = 10 V, I D = 500 mA 1.19 1.6WV GS = 4.5 V, I D = 200 mA 1.33 2.5Forward Transconductance g FS V DS = 5 V, I D = 200 mA530mS CHARGES AND CAPACITANCESInput Capacitance C ISSV GS = 0 V, f = 1 MHz,V DS = 20 V 24.545pFOutput Capacitance C OSS 4.28.0 Reverse Transfer Capacitance C RSS 2.2 5.0Total Gate Charge Q G(TOT)V GS = 4.5 V, V DS = 10 V;I D = 200 mA 0.7nCThreshold Gate Charge Q G(TH)0.1 Gate−to−Source Charge Q GS0.3 Gate−to−Drain Charge Q GD0.1 SWITCHING CHARACTERISTICS, V GS = V (Note 6)Turn−On Delay Time t d(ON)V GS = 10 V, V DD = 25 V,I D = 500 mA, R G = 25 W 12.2nsRise Time t r9.0 Turn−Off Delay Time t d(OFF)55.8 Fall Time t f29 DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V SD VGS = 0 V,I S = 200 mA T J = 25°C0.8 1.2V T J = 85°C0.7Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.5.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%6.Switching characteristics are independent of operating junction temperaturesFigure 1. On −Region CharacteristicsFigure 2. Transfer CharacteristicsV DS , DRAIN −TO −SOURCE VOLTAGE (V)V GS , GATE −TO −SOURCE VOLTAGE (V)Figure 3. On −Resistance vs. Drain Current andTemperatureFigure 4. On −Resistance vs. Drain Current andTemperatureI D , DRAIN CURRENT (A)Figure 5. On −Resistance vs. Gate −to −SourceVoltage Figure 6. On −Resistance Variation withTemperatureV GS , GATE −TO −SOURCE VOLTAGE (V)T J , JUNCTION TEMPERATURE (°C)I D , D R A I N C U R R E N T (A )I D , D R A I N C U R R E N T (A )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (N O R M A L I Z E D )I D , DRAIN CURRENT (A)R D S (o n ), D R A I N −T O −S O U R C E R E S I S T A N C E (W )Figure 7. Capacitance VariationFigure 8. Gate −to −Source andDrain −to −Source Voltage vs. Total ChargeQg, TOTAL GATE CHARGE (nC)Figure 9. Diode Forward Voltage vs. CurrentV SD , SOURCE −TO −DRAIN VOLTAGE (V)V G S , G A T E −T O −S O U R C E V O L T A G E (V )I S , S O U R C E C U R R E N T (A)C , C A P A C I T A N C E (p F )GATE −TO −SOURCE OR DRAIN −TO −SOURCE VOLTAGE (V)Figure 10. Threshold Voltage withTemperatureT J , JUNCTION TEMPERATURE (°C)V G S (T H ), T H R E S H O L D V O L T A G E (V )0.11101000.0000010.000010.00010.0010.010.11000Figure 11. Thermal Response − 1 sq in padt, PULSE TIME (s)R q J A (t ) (°C /W ) E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E11010010000.11101000.0000010.000010.00010.0010.010.11000Figure 12. Thermal Response − minimum padt, PULSE TIME (s)R q J A (t ) (°C /W ) E F F E C T I V E T R A N S I E N T T H E R M A L R E S I S T A N C E1101001000SOT −23 (TO −236)CASE 318−08ISSUE ASDATE 30 JAN 2018SCALE 4:11XXXM G G XXX = Specific Device Code M = Date Code G = Pb −Free Package*This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.GENERICMARKING DIAGRAM*NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.SOLDERING FOOTPRINTDIM A MIN NOM MAX MINMILLIMETERS0.89 1.00 1.110.035INCHES A10.010.060.100.000b 0.370.440.500.015c 0.080.140.200.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.300.430.550.0120.0390.0440.0020.0040.0170.0200.0060.0080.1140.1200.0510.0550.0750.0800.0170.022NOM MAX L1STYLE 22:PIN 1.RETURN2.OUTPUT3.INPUT STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR STYLE 7:PIN 1.EMITTER2.BASE3.COLLECTORSTYLE 8:PIN 1.ANODE2.NO CONNECTION3.CATHODESTYLE 9:PIN 1.ANODE2.ANODE3.CATHODE STYLE 10:PIN 1.DRAIN2.SOURCE3.GATE STYLE 11:PIN 1.ANODE 2.CATHODE 3.CATHODE −ANODE STYLE 12:PIN 1.CATHODE2.CATHODE3.ANODE STYLE 13:PIN 1.SOURCE2.DRAIN3.GATESTYLE 14:PIN 1.CATHODE2.GATE3.ANODESTYLE 15:PIN 1.GATE2.CATHODE3.ANODE STYLE 16:PIN 1.ANODE2.CATHODE3.CATHODE STYLE 17:PIN 1.NO CONNECTION2.ANODE3.CATHODE STYLE 18:PIN 1.NO CONNECTION 2.CATHODE 3.ANODE STYLE 19:PIN 1.CATHODE 2.ANODE 3.CATHODE −ANODE STYLE 23:PIN 1.ANODE2.ANODE3.CATHODESTYLE 20:PIN 1.CATHODE2.ANODE3.GATE STYLE 21:PIN 1.GATE2.SOURCE3.DRAIN STYLE 1 THRU 5:CANCELLEDSTYLE 24:PIN 1.GATE2.DRAIN3.SOURCESTYLE 25:PIN 1.ANODE2.CATHODE3.GATESTYLE 26:PIN 1.CATHODE2.ANODE3.NO CONNECTIONSTYLE 27:PIN 1.CATHODE2.CATHODE3.CATHODE2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.027c0−−−100−−−10T°°°°END VIEWDIMENSIONS: MILLIMETERS3X3XRECOMMENDED STYLE 28:PIN 1.ANODE2.ANODE3.ANODEMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

BCR12PM-12LG中文资料

BCR12PM-12LGTriacMedium Power UseREJ03G1510-0100Rev.1.00Feb 14, 2007 Features• I T (RMS) : 12 A• V DRM : 600 V• I FGTI, I RGTI, I RGT III : 30 mA • V iso : 2000V • The Product guaranteed maximum junction temperature 150°C• Insulated Type• Planar Type• UL Recognized : Yellow Card No. E223904File No.E80271OutlineApplicationsSwitching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,electric tool, electric heater control, and other general purpose control applicationsVoltage classParameter Symbol12UnitRepetitive peak off-state voltage Note1V DRM 600 V Non-repetitive peak off-state voltage Note1V DSM 720 VParameter Symbol Ratings Unit ConditionsRMS on-state current I T (RMS) 12 A Commercial frequency, sine full wave360°conduction, Tc = 92°CSurge on-state current I TSM 120 A 60Hz sinewave 1 full cycle, peak value,non-repetitiveI 2t for fusion I 2t 60 A 2s Value corresponding to 1 cycle of halfwave 60Hz, surge on-state currentPeak gate power dissipation P GM 5 W Average gate power dissipation P G (AV) 0.5 W Peak gate voltage V GM 10 V Peak gate current I GM 2 A Junction Temperature Tj –40 to +150 °C Storage temperature Tstg –40 to +150 °C Mass — 2.0 g Typical value Isolation voltage V iso 2000 V Ta = 25°C, AC 1 minute,T 1 • T 2 • G terminal to caseNotes: 1. Gate open.Electrical CharacteristicsParameter Symbol Min. Typ. Max. Unit Test conditions Repetitive peak off-state current I DRM — — 2.0 mA Tj = 150°C, V DRM applied On-state voltage V TM — — 1.6 V Tc = 25°C, I TM = 20 A,instantaneous measurementΙV FGT Ι — — 1.5V ΙΙ V RGT Ι — — 1.5 V Gate trigger voltage Note2ΙΙΙ V RGT ΙΙΙ — — 1.5 VTj = 25°C, V D = 6 V, R L = 6 Ω,R G = 330 Ω Ι I FGT Ι — — 30 mA ΙΙ I RGT Ι — — 30 mAGate trigger curent Note2ΙΙΙI RGT ΙΙΙ — — 30 mATj = 25°C, V D = 6 V, R L = 6 Ω, R G = 330 Ω Gate non-trigger voltageV GD 0.2/0.1 — — V Tj = 125°C/150°C, V D = 1/2 V DRM Thermal resistanceR th (j-c) — — 4.0 °C/W Junction to case Note3 Critical-rate of rise of off-statecommutation voltageNote4(dv/dt)c 10/1 —— V/µs Tj = 125°C/150°CNotes: 2. Measurement using the gate trigger characteristics measurement circuit.3. The contact thermal resistance R th (j-c) in case of greasing is 0.5°C/W.4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.Performance CurvesPackage DimensionsOrder CodeLead form Standard packing Quantity Standard order code Standard order code exampleStraight type Vinyl sack 100Type name BCR12PM-12LG Lead form Plastic Magazine (Tube) 50Type name – Lead forming code BCR12PM-12LG-A8 Note : Please confirm the specification about the shipping in detail.Refer to "/en/network " for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology (Shanghai) Co., Ltd.Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145Renesas Technology Malaysia Sdn. BhdUnit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510RENESAS SALES OFFICES。

QS5K2TR;中文规格书,Datasheet资料

TransistorsRev.A 1/32.5V Drive Nch+Nch MOSFETQS5K2z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFETz Features1) Low On-resistance.3) Space saving, small surface mount package (TSMT5).zSwitchingz Packaging specifications z Inner circuitz Absolute maximum ratings (T a=25°C)∗1∗2∗1ParameterV V DSS Symbol V V GSS A I DA I DP A I SAI SP W / TOTAL P D °C Tch °CTstgLimits Unit Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperatureRange of storage temperatureContinuous Pulsed Continuous Pulsed∗1 Pw ≤10µs, Duty cycle ≤1%∗2 Mounted on a ceramic boardSource current (Body diode)30150−55 to +15012±2.0±8.00.83.21.25W / ELEMENT0.9<It is the same ratings for the Tr1 and Tr2>z Thermal resistanceParameter°C/W Rth(ch-a)Symbol Limits Unit Channel to ambient100°C/W139∗ Mounted on a ceramic board∗TransistorsRev.A 2/3z Electrical characteristics (T a=25°C)z Body diode characteristics (Source-drain) (T a=25°C)V SD −−1.2VI S = 3.2A, V GS =0VForward voltage∗ PulsedParameter Symbol Min.Typ.Max.UnitConditions∗<It is the same characteristics for the Tr1 and Tr2>TransistorsRev.A 3/3DRAIN-SOURCE VOLTAGE : V DS (V)101001000C A P A C I T A N C E : C (p F )Fig.1 Typical Capacitancevs. Drain-Source VoltageGATE-SOURCE VOLTAGE : V GS (V)0.0010.010.1110D R A I N C U R RE N T : I D (A )Fig.4 Typical Transfer CharacteristicsSOURCE-DRAIN VOLTAGE : V SD(V)S O U R C E C U R R E N T : I S (A )Fig.6 Source Current vs. Source-Drain VoltageGATE-SOURCE VOLTAGE : V GS (V)100200300S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S TA N C E : R D S (m Ω)Fig.5 Static Drain-SourceOn-State Resistance vs.Gate source Voltagez Electrical characteristics curvesDRAIN CURRENT : I D (A)1101001000S W I T C H I N G T I M E : t (n s )Fig.2 Switching CharacteristicsTOTAL GATE CHARGE : Qg (nC)123456G A T E -S O U R C E V O L T A G E : V G S (V )Fig.3 Dynamic Input CharacteristicsDRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.7 Static Drain-Source On-State Resistance vs. Drain Current ( Ι )DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.8 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ )DRAIN CURRENT : I D (A)S T A T I C D R A I N -S O U R C E O N -S T A T E R E S I S T A N C E : R D S (o n ) (m Ω)Fig.9 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙΙ )AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1分销商库存信息: ROHMQS5K2TR。

英飞凌 FP50R12N2T7P EconoPIM 2 模块数据表

EconoPIM ™2 模块采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管带有温度检测NTC 和预涂导热介质特性•电气特性-V CES = 1200 V-I C nom = 50 A / I CRM = 100 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-预涂导热介质-焊接技术可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。

描述FP50R12N2T7PEconoPIM ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4二极管,整流器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5IGBT, 斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6Diode-斩波器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 10封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 11模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .191封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE35nH 模块引线电阻,端子-芯片R AA'+CC'T H=25°C, 每个开关 5.5mΩ模块引线电阻,端子-芯片R CC'+EE'T H=25°C, 每个开关 4.8mΩ储存温度T stg-40125°C 最高基板工作温度T BPmax150°CM5, 螺丝36Nm 模块安装的安装扭距M根据相应的应用手册进行安装重量G180g注:The current under continuous operation is limited to 50 A rms per connector pin.Storage and shipment of modules with TIM => see AN2012-072IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 90 °C50A 集电极重复峰值电流I CRM t P = 1 ms100A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 50 A, V GE = 15 V T vj = 25 °C 1.50 1.80VT vj = 125 °C 1.64T vj = 175 °C 1.72栅极阈值电压V GEth I C = 2 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.92µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V11.1nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.039nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.01mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.059µs T vj = 125 °C0.061T vj = 175 °C0.062上升时间(感性负载)t r I C = 50 A, V CE = 600 V,V GE = ±15 V, R Gon = 7.5 ΩT vj = 25 °C0.043µs T vj = 125 °C0.047T vj = 175 °C0.049关断延迟时间(感性负载)t doff I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.290µs T vj = 125 °C0.380T vj = 175 °C0.420下降时间(感性负载)t f I C = 50 A, V CE = 600 V,V GE = ±15 V, R Goff = 7.5 ΩT vj = 25 °C0.110µs T vj = 125 °C0.200T vj = 175 °C0.270开通损耗能量 (每脉冲)E on I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 7.5 Ω, di/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 5.07mJ T vj = 125 °C 6.76T vj = 175 °C7.72关断损耗能量 (每脉冲）E off I C = 50 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 7.5 Ω, dv/dt =2900 V/µs (T vj = 175 °C)T vj = 25 °C 3.37mJ T vj = 125 °C 5.31T vj = 175 °C 6.58(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C190At P≤ 7 µs,T vj=175 °C180结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material0.777K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F50A 正向重复峰值电流I FRM t P = 1 ms100A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C465A²sT vj = 175 °C420表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM I F = 35 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C31A T vj = 125 °C39T vj = 175 °C45恢复电荷Q r I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 3.96µC T vj = 125 °C7.37T vj = 175 °C9.89(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗（每脉冲）E rec I F = 50 A, V R = 600 V,V GE = -15 V, -di F/dt = 900A/µs (T vj = 175 °C)T vj = 25 °C 1.31mJ T vj = 125 °C 2.52T vj = 175 °C 3.46结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.13K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.4二极管,整流器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1600V 最大正向均方根电流(每芯片)I FRMSM T H = 60 °C70A最大整流器输出均方根电流I RMSM T H = 60 °C100A 正向浪涌电流I FSM t P = 10 ms T vj = 25 °C560AT vj = 150 °C435I2t-值I2t t P = 10 ms T vj = 25 °C1570A²sT vj = 150 °C945表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 50 A T vj = 150 °C 1.05V 反向电流I r T vj = 150 °C, V R = 1600 V1mA 结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.10K/W 允许开关的温度范围T vj, op-40150°C5IGBT, 斩波器表 9最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T H = 110 °C25A 集电极重复峰值电流I CRM t P = 1 ms50A 栅极－发射极峰值电压V GES±20V表 10特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 25 A, V GE = 15 V T vj = 25 °C 1.60 1.85VT vj = 125 °C 1.74T vj = 175 °C 1.82栅极阈值电压V GEth I C = 0.525 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V0.395µC 内部栅极电阻R Gint T vj = 25 °C0Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V 4.77nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.017nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.004mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.041µs T vj = 125 °C0.043T vj = 175 °C0.044上升时间(感性负载)t r I C = 25 A, V CE = 600 V,V GE = ±15 V, R Gon = 9.1 ΩT vj = 25 °C0.025µs T vj = 125 °C0.028T vj = 175 °C0.030关断延迟时间(感性负载)t doff I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.230µs T vj = 125 °C0.320T vj = 175 °C0.350下降时间(感性负载)t f I C = 25 A, V CE = 600 V,V GE = ±15 V, R Goff = 9.1 ΩT vj = 25 °C0.140µs T vj = 125 °C0.220T vj = 175 °C0.280(待续)表 10(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值开通损耗能量 (每脉冲)E on I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 9.1 Ω, di/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.47mJ T vj = 125 °C 2.05T vj = 175 °C 2.39关断损耗能量 (每脉冲）E off I C = 25 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 9.1 Ω, dv/dt =3120 V/µs (T vj = 175 °C)T vj = 25 °C 1.65mJ T vj = 125 °C 2.58T vj = 175 °C 3.13短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C90At P≤ 7 µs,T vj=175 °C85结－散热器热阻R thJH每个 IGBT, Valid with IFX pre-appliedThermal Interface Material1.19K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.6Diode-斩波器表 11最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F25A 正向重复峰值电流I FRM t P = 1 ms50A I2t-值I2t V R = 0 V, t P = 10 ms T vj = 125 °C125A²sT vj = 175 °C95表 12特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 25 A, V GE = 0 V T vj = 25 °C 1.83 2.30VT vj = 125 °C 1.70T vj = 175 °C 1.63(待续)表 12(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复峰值电流I RM I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C21.7A T vj = 125 °C26.7T vj = 175 °C29.8恢复电荷Q r I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C 1.69µC T vj = 125 °C 3.29T vj = 175 °C 4.29反向恢复损耗（每脉冲）E rec I F = 25 A, V R = 600 V,V GE = -15 V, -di F/dt = 810A/µs (T vj = 175 °C)T vj = 25 °C0.63mJ T vj = 125 °C 1.28T vj = 175 °C 1.69结－散热器热阻R thJH每个二极管, Valid with IFX pre-appliedThermal Interface Material1.63K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.7负温度系数热敏电阻表 13特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7 负温度系数热敏电阻9电路拓扑图图 110封装尺寸图 211模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002022-02-01Initial version商标所有参照产品或服务名称和商标均为其各自所有者的财产。

GQ按键资料

GQ12 B-10/ J/◎ 接线插片(2×0.5mm ) X(双断点慢动触头) 2A/36 VD C ≤50 m Ω ≥1000 MΩ 2000VAC -20℃ ~ +55℃ 100万次以上 20万次以上 1～5m m 5～1 4 N m 约5N 约2.5m m IP65,I K08 银合金不锈钢/黄铜镀镍不锈钢/黄铜镀镍 PBT 可定制 ——
G Q 16M -10 接线柱 X(双断点慢动触头) 2A /36VD C ≤50mΩ ≥1000MΩ 20 00VA C -2 0℃ ~ +55℃ 10 0万次以上 20万次以上 1～3mm 5～14Nm 约8N 约3mm IP 40,IK0 9 镀银触片黄铜（古铜色）黄铜（古铜色） PBT 可定制古铜色
带灯部分电压 AC/DC 6V
AC/DC 12V AC/DC 24V
AC/DC 36V 其他电压等级可定做
外壳材料 N 黄铜镀镍外壳 G 黄铜镀金外壳 S 不锈钢外壳 A 锌铝合金(黑色) T 锌铝合金(银白) PC 工程塑料
灯珠类型
双向LED灯珠（交直流通用）
额定电压
AC/DC6V
AC/DC12V
说明
X
具有两个端子的双断点慢动触头开关
个别产品可定制Y型常闭开关，详见
Y
产品说明。
安装效果预览
GQ8 信号灯
GQ12 信号灯
GQ 12 圆形
GQ12 方形
GQ 16M 门铃按钮
GQ16 接线柱式
GQ16 引脚式
GQ19 接线柱式
GQ 19 引脚式
2
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BL6522B 高精度三相多功能电能计量芯片产品说明书

BL6522B
高精度三相多功能明书
（版本：1.0）
如需得到最新的产品信息，请与上海贝岭有限公司联系，本公司保留不需要通知本数据手册读者而修改本数据手册的权利。
Edit by Richard Han, Shi Fei, Fei yu hang
1）电参数性能指标................................................................................................................. 12 2）极限范围 ........................................................................................................................... 15 二工作原理 ............................................................................................................................................ 17 （一）系统框图及原理.................................................................................................................... 17 1）三相原理结构描述图 ......................................................................................................... 17 2）单相原理结构描述图（以 A 相为例）................................................................................ 19 （二）电流电压瞬态波形测量前端（以 A 相为例） ........................................................................ 20 1）前端增益调整 .................................................................................................................... 20 2）相位补偿 ........................................................................................................................... 20 3）输入偏差校正 .................................................................................................................... 21 4）通道增益校正 .................................................................................................................... 21 5）电流电压波形输出 ............................................................................................................. 22 6）电压通道增益粗调 ............................................................................................................. 22 （三）有功功率计量原理（以 A 相为例）....................................................................................... 23 1）有功功率偏差校正 ............................................................................................................. 24 2）有功功率增益调整 ............................................................................................................. 24 3）有功功率的防潜动 ............................................................................................................. 24 4）有功功率的小信号补偿...................................................................................................... 25 5）有功功率反向指示阈值 ...................................................................................................... 25 6）正向有功能量计算 ............................................................................................................. 25

台科技 SMD Power Inductor TMPA1265SP-Series(N)-D 说明书

ECN HISTORY LISTREV DATE DESCRIPTION APPROVED CHECKED DRAWN 1.018/06/20新發行羅宜春梁周虎許靜備注B:Dimension BxC.C:Type Standard.D:Inductance R10=0.1uh，1R0=1.0uh，100=10uh，101=100uh，102=1000uh. E:Inductance Tolerance K=±10%，L=±15%，M=±20%，N=±25%，Y=±30%F:Code Marking:Black.100and1536(15YY,36WW,follow production date).5.Specification1.Test frequency:Ls:100KHz/1.0V.2.All test data referenced to25℃ambient.3.Testing Instrument(or equ):L:HP4284A,CH11025,CH3302,CH1320,CH1320S LCR METER/Rdc:CH16502,Agilent33420A MICRO OHMMETER.4.Heat Rated Current(Irms)will cause the coil temperature rise approximatelyΔT of40℃5.Saturation Current(Isat)will cause L0to drop approximately30%.6.The part temperature(ambient+temp rise)should not exceed125℃under worst case operating conditions.Circuit design,component,PCB trace size andthickness,airflow and other cooling provisions all affect the part temperature.Part temperature should be verified in the end application.7.Special inquiries besides the above common used types can be met on your requirement.6.Material List7.Reliability and Test ConditionItemPerformanceTest ConditionOperating temperature-40~+125℃(Including self-temperature rise)Storage temperature1.-10~+40℃,50~60%RH (Product with taping )2.-40~+125℃(on board)Electrical Performance TestInductanceRefer to standard electrical characteristics list.HP4284A,CH11025,CH3302,CH1320,CH1320S LCR Meter.DCRCH16502,Agilent33420A Micro-Ohm Meter.Saturation Current (Isat)Approximately △L30%.Saturation DC Current (Isat)will cause L0to drop △L(%)Heat Rated Current (Irms)Approximately △T40℃Heat Rated Current (Irms)will cause the coil temperature rise △T(℃).1.Applied the allowed DC current2.Temperature measured by digital surface thermometerReliability TestLife TestAppearance ：No damage.Impedance ：within ±15%of initial value Inductance ：within ±10%of initial valueQ ：Shall not exceed the specification value.RDC ：within ±15%of initial value and shall not exceed the specification valuePreconditioning:Run through IR reflow for 2times.(IPC/JEDECJ-STD-020DClassification Reflow Profiles)Temperature ：125±2℃(Inductor)Applied current ：rated current Duration ：1000±12hrsMeasured at room temperature after placing for 24±2hrs.Load HumidityPreconditioning:Run through IR reflow for 2times.(IPC/JEDECJ-STD-020DClassification Reflow Profiles)Humidity ：85±2﹪R.H,Temperature ：85℃±2℃Duration ：1000hrs Min.with 100%rated currentMeasured at room temperature after placing for 24±2hrs.Moisture ResistancePreconditioning:Run through IR reflow for 2times.(IPC/JEDECJ-STD-020DClassification Reflow Profiles)1.Baked at50℃for 25hrs,measured at room temperature after placing for 4hrs.2.Raise temperature to 65±2℃90-100%RH in 2.5hrs,and keep 3hours,cool down to 25℃in 2.5hrs.3.Raise temperature to 65±2℃90-100%RH in 2.5hrs,and keep 3hours,cool down to 25℃in2.5hrs,keep at 25℃for 2hrs then keep at -10℃for 3hrs4.Keep at 25℃80-100%RH for 15min and vibrate at the frequency of 10to 55Hz to 10Hz,measure at room temperature after placing for 1~2hrs.Thermal shockPreconditioning:Run through IR reflow for 2times.(IPC/JEDECJ-STD-020DClassification Reflow Profiles)Condition for 1cycleStep1：-40±2℃30±5min Step2：25±2℃≦0.5minStep3：125±2℃30±5minNumber of cycles ：500Measured at room fempraturc after placing for 24±2hrs.VibrationPreconditioning:Run through IR reflow for 2times.(IPC/JEDECJ-STD-020DClassification Reflow Profiles)Oscillation Frequency:10～2K ～10Hz for 20minutes Equipment ：Vibration checker Total Amplitude:1.52mm±10%Testing Time :12hours(20minutes,12cycles each of 3orientations)。

BL0972 交直流电能计量芯片数据手册 V1.0说明书

BL0972交/直流电能计量芯片数据手册V1.0目录1、产品简述 (5)2、基本特征 (6)2.1主要特点 (6)2.2系统框图 (7)2.3管脚排列（TSSOP20） (7)2.4性能指标 (8)2.4.1电参数性能指标 (8)2.4.2极限范围 (9)3、工作原理 (10)3.1电流电压波形产生原理 (10)3.1.1PGA增益调整 (10)3.1.2相位补偿 (11)3.1.3通道偏置校正 (11)3.1.4通道增益校正 (12)3.1.5电流电压波形输出 (12)3.2有功功率计算原理 (13)3.2.1有功波形的选择 (14)3.2.2有功功率输出 (14)3.2.3有功功率校准 (14)3.2.4有功功率的防潜动 (15)3.2.5有功功率小信号补偿 (15)3.3有功能量计量原理 (16)3.3.1有功能量输出 (16)3.3.2有功能量输出选择 (16)3.3.3有功能量输出比例 (17)3.4电流电压有效值计算原理 (17)3.4.1有效值输出 (18)3.4.2有效值输入信号的设置 (18)3.4.3有效值刷新率的设置 (18)3.4.4电流电压有效值校准 (19)3.4.5有效值的防潜动 (19)3.5快速有效值检测原理 (20)3.5.1快速有效值输出 (20)3.5.2快速有效值输入选择 (21)3.5.3快速有效值累计时间和阈值 (21)3.5.4电网频率选择 (21)3.5.5快速有效值超限数据保存 (22)3.5.6过流指示 (22)3.5.7继电器控制 (22)3.6温度计量 (23)3.7.1线周期计量 (23)3.7.2线频率计量 (23)3.7.3相角计算 (24)3.7.4功率符号位 (24)3.8故障检测 (25)3.8.1过零检测 (25)3.8.2峰值超限 (25)3.8.3线电压跌落 (26)3.8.4过零超时 (27)3.8.5电源供电指示 (28)4、内部寄存器 (30)4.1电参量寄存器（只读） (30)4.2校表寄存器（外部写） (30)4.3OTP寄存器 (32)4.4模式寄存器 (33)4.4.1 MODE1寄存器 (33)4.4.2 MODE2寄存器 (33)4.4.3 MODE3寄存器 (34)4.5中断状态寄存器 (34)4.5.1 STATUS1寄存器 (34)4.5.2 STATUS3寄存器 (34)4.6校表寄存器详细说明 (34)4.6.1 通道PGA增益调整寄存器 (34)4.6.2 相位校正寄存器 (35)4.6.3 有效值增益调整寄存器 (35)4.6.4 有效值偏置校正寄存器 (36)4.6.5 有功小信号补偿寄存器 (36)4.6.7 防潜动阈值寄存器 (36)4.6.8 快速有效值相关设置寄存器 (37)4.6.9 过流报警及控制 (38)4.6.11 能量读后清零设置寄存器 (39)4.6.12 用户写保护设置寄存器 (39)4.6.13 软复位寄存器 (39)4.6.14 通道增益调整寄存器 (40)4.6.15 通道偏置调整寄存器 (40)4.6.16 有功功率增益调整寄存器 (40)4.6.17 有功功率偏置调整寄存器 (41)4.6.20 CF缩放比例寄存器 (41)4.7电参数寄存器详细说明 (42)4.7.1 波形寄存器 (42)4.7.2 有效值寄存器 (42)4.7.3 快速有效值寄存器 (42)4.7.7 电能脉冲计数寄存器 (43)4.7.8 波形夹角寄存器 (44)4.7.9 快速有效值保持寄存器 (44)4.7.11 线电压频率寄存器 (44)5、SPI通讯接口 (45)5.1概述 (45)5.2工作模式 (45)5.3帧结构 (45)5.4读出操作时序 (46)5.5写入操作时序 (47)5.6SPI接口的容错机制 (48)6、典型应用图 (49)7、封装信息 (50)1、产品简述BL0972是一颗内置时钟的单相交/直流电能计量芯片。

QEC122,QEC123, 规格书,Datasheet 资料

QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Figure 7. Radiation Diagram
100° 90° 80°
110°
70°
120°
60°
130°
50°
140°
40°
150°
30°
160°
20°
170°
10°
180°
0°
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
IC (ON) – NORMALIZED COLLECTOR CURRENT
QEC121, QEC122, QEC123 Rev. 1.0.1

QSS-075-01-L-D-EM2;中文规格书,Datasheet资料

EDGE MOUNT THICKNESS -EM3: SEE NOTE 10 (DIFFERENT AS SHOWN, OTHERWISE SAME AS -EM2 PCB THICKNESS)
SECTION "A-A"
UNLESS OTHERWISE SPECIFIED, DIMENSIONS ARE IN INCHES. TOLERANCES ARE:
MATERIAL:
DO NOT SCALE DRAWING
SHEET SCALE: 1.375:1 DESCRIPTION:
INSULATOR: LCP, COLOR: BLACK CONTACT: PHOS BRONZE GROUND PLANE: PHOS BRONZE
.635mm EDGE MOUNT HS SOCKET ASSEMBLY
520 PARK EAST BLVD, NEW ALBANY, IN 47150 PHONE: 812-944-6733 FAX: 812-948-5047 e-Mail: info@ code: 55322
DESCRIPTION: DWG. NO.
DO NOT SCALE DRAWING SHEET SCALE: 2:1
DWG. NO.
QSS-XXX-01-XXX-D-EMX
5/26/2000
SHEET 1 OF 2
/
F:\DWG\MISC\MKTG\QSS-XXX-01-XXX-D-EMX-MKT.SLDDRW
BY: DEAN P
REVISION R
.0075 0.191 MAX
02 .285 7.24 REF 01 .0255 0.647 REF 24 EQ SPACES @ .0250[.635]

D1D12资料

For recommended applications and more information contact: USA: Sales Support (877) 502-5500 Tech Support (877) 702-7700 FAX (619) 710-8540 Crydom Inc., 2320 Paseo de las Americas, Ste. 201, San Diego, CA 92154 Email: sales@ WEB SITE: UK: +44 (0)1202 606030 • FAX +44 (0)1202 606035 Crydom SSR Ltd., Arena Business Centre, Holyrood Close, Poole, Dorset BH17 7FJ, Email: intsales@. GERMANY: +49 (0)180 3000 506
2500 Vrms 10 9 Ohm
50 pF
Ambient Operating Temperature Range
-20 to 80ºC
Ambient Storage Temperature Range
-20 to 125ºC
MECHANICAL SPECIFICATIONS Weight: (typical)
© 2008 CRYDOM Inc., Specifications subject to change without notice.
For recommended applications and more information contact: USA: Sales Support (877) 502-5500 Tech Support (877) 702-7700 FAX (619) 710-8540 Crydom Inc., 2320 Paseo de las Americas, Ste. 201, San Diego, CA 92154 Email: sales@ WEB SITE: UK: +44 (0)1202 606030 • FAX +44 (0)1202 606035 Crydom SSR Ltd., Arena Business Centre, Holyrood Close, Poole, Dorset BH17 7FJ, Email: intsales@. GERMANY: +49 (0)180 3000 506

GQM22M5C2H270JB01L,GQM22M5C2H330JB01L,规格书,Datasheet 资料

T2010.11.4来自/芯天下--/
Code L K B Packaging 180mm Embossed Tape 330mm Embossed Tape Bulk(Bag) Minimum Quantity 1000 4000 1000
I Specifications I Rated Value
Murata PN Code Temperature Char. Capacitance Capacitance Tol. Rated Voltage 5C 270 J 2H Spec C0G (EIA), 0±30ppm/°C 27pF ±5% 500Vdc Please refer to 'GQM Series Specification and Test Methods' PDF file.
• The RoHS compliance means that we judge from EU Directive 2002/95/EC the products do not contain lead, cadmium, mercury, hexavalent chromium, PBB and PBDE, except exemptions stated in EU Directive 2002/95/EC annex and impurities existing in natural world. • This statement does not insure the compliance of any of the listed parts with any laws or legal imperatives developed by any EU members individually with regards to the RoHS Directive.

ZMM5252B中文资料(WILLAS ELECTRONIC)中文数据手册「EasyDatasheet - 矽搜」

5264
ZMM5265B
62.0
58.90
65.10
185
2.0
1400
0.25
0.1
47.0
5265
ZMM5266B
68.0
64.60
71.40
230
1.8
1600
0.25
0.1
52.0
5266
ZMM5267B
75.0
71.25
78.75
270
1.7
1700
0.25
0.1
56.0
5267
1）基于直流测量达到热平衡;引线长度=9.5毫米（3/8"）;散热器= 30K / W热阻
5244
ZMM5245B
15.0
14.25
15.75
16
8.5
600
0.25
0.1
11.0
5245
ZMM5246B
16.0
15.20
16.80
17
7.8
600
0.25
0.1
12.0
5246
ZMM5247B
17.0
16.15
17.85
19
7.4
600
0.25
0.1
13.0
5247
ZMM5248B
18.0
类型
max. .006 (0.15)
符号
PTOT IZ Tj Tstg
值
500
PV/V Z -65到+175 –65 至 +175
单元
mW
mA °C °C
.010 (0.25) min.
Marking Code: 测JV o试r 4条件

爱立智麦勒尔ZB系列电机保护开关产品说明书

Eaton 278442Eaton Moeller® series ZB Motorschutzrelais, ZB32, Ir= 0,1 - 0,16A, 1 S, 1 Ö, Direktmontage, IP20Allgemeine spezifikationEaton Moeller® series ZB Thermaloverload relay278442401508278442396 mm67 mm45 mm0.141 kgUL File No.: E29184CSA Class No.: 3211-03CSA-C22.2 No. 60947-4-1-14 IEC/EN 60947VDE 0660IEC/EN 60947-4-1ULUL Category Control No.: NKCR CSA File No.: 012528CECSAUL 60947-4-1Überlastrelais thermisch ZB32-0,16Produktname KatalognummerEANProdukt Länge/Tiefe Produkthöhe Produktbreite Produktgewicht Zertifikat(e)ProdukttypModellcodePhasenausfallempfindlichkeit (gemäß IEC/EN 60947, VDE 0660 Teil 102)Reset-Taste Hand/Auto Freiauslösung Test/Aus-Taste-25 °C55 °C25 °C40 °C CLASS 10 A Feuchte Wärme, konstant, nach IEC 60068-2-78 Feuchte Wärme, zyklisch, nach IEC 60068-2-30IP20ZB32Direct attachment Direktanbau0.1 A0.16 AIII3Finger- und handrückensicher, Berührungsschutz bei senkrechter Betätigung von vorne (EN 50274)MerkmaleUmgebungsbetriebstemperatur – min Umgebungsbetriebstemperatur – max Umgebungsbetriebstemperatur (gekapselt) – min Umgebungsbetriebstemperatur (gekapselt) – max Klasse KlimafestigkeitSchutzart Rahmengr.Montageart Überlastauslösestromeinstellung - min Überlastauslösestromeinstellung - max Überspannungskategorie Verschmutzungsgrad Produktkategorie SchutzZubehörMotorschutzrelais ZB bis 150 A6000 V AC4000 V (Hilfs- und Steuerkreise)10 g, Mechanisch, Sinusförmig, Schockdauer 10 ms Nebenstromkreise, (UL/CSA)≤ 0,25 %/K, Restfehler für T > 40° Kontinuierlich 2 x (0,75 - 2,5) mm², Steuerstromleitungen2 x (1 - 4) mm², Hauptleiter1 x (1 - 4) mm², Hauptleiter1 x (0,75 - 2,5) mm², Steuerstromleitungen1 x (0,75 - 4) mm², Steuerstromleitungen2 x (0,75 - 4) mm², Steuerstromleitungen1 x (1 - 6) mm², Hauptleiter2 x (1 - 6) mm², Hauptleiter2 x (18 - 14), Steuerstromleitungen18 - 8, Hauptleiter10 mm8 mmM3,5, Anschlussschraube, HilfsleiterM4, Anschlussschraube2, Anschlussschraube, Pozidriv-Schraubendreher1 x 6 mm, Anschlussschraube, Schlitzschraubendreher1,2 Nm, Schraubklemmen, Steuerstromleitungen1.8 Nm, Schraubklemmen, Hauptleiter6 A 1.5 A 1.5 A 0.9 A 100 kA, Sicherung, SCCR (UL/CSA)1 A, Klasse J/CC, max. Sicherung, SCCR (UL/CSA)0,5 A gG/gL, Sicherung, Zuordnungsart "2"Max. 6 A gG/gL, Sicherung, Ohne Verschweißen, Hilfs- und Steuerkreise25 A gG/gL, Sicherung, Zuordnungsart "1"Bemessungsstoßspannungsfestigkeit (Uimp)Schockfestigkeit Geeignet für Temperaturkompensation Anschlusskapazität (freindrähtig mit Aderendhülse) Anschlusskapazität (fest)Anschlusskapazität (ein-/mehrdrähtig AWG) Abisolierlänge (Hauptleiter)Abisolierlänge (Hilfsleiter)Schr-GröSchraubendrehergrößeAnzugsdrehmomentKonventioneller thermischer Strom lth der Hilfskontakte (1-polig, offen)Bemessungsbetriebsstrom (le) bei AC-15, 120 V Bemessungsbetriebsstrom (le) bei AC-15, 220 V, 230 V, 240 V Bemessungsbetriebsstrom (le) bei AC-15, 380 V, 400 V, 415 V Bemessungskurzschlussstrom (hoher Fehlerstrom bei 600 V) Bemessungsdaten Kurzschlussschutz0.4 A0.2 A0.9 A0.75 A690 V440 V, Zwischen Hilfskontakten und Hauptkontakten, Entspricht EN 61140440 V AC, zwischen den Hauptstrombahnen, Entspricht EN 61140240 V AC, Zwischen Hilfskontakten, Entspricht EN 61140B300 bei gegenüberliegender Polarität, AC-betätigt (UL/CSA) B600 bei gegenüberliegender Polarität, AC-betätigt (UL/CSA) R300, DC-betätigt (UL/CSA)600 VAC600 VAC 011115.4 W0 W1.8 W0.16 A0 WAnforderungen der Produktnorm sind erfüllt.Anforderungen der Produktnorm sind erfüllt.Anforderungen der Produktnorm sind erfüllt.Anforderungen der Produktnorm sind erfüllt.Anforderungen der Produktnorm sind erfüllt.Unzutreffend, da die gesamten Schaltgeräte überprüft werdenBemessungsbetriebsstrom (le) bei DC-13, 110 VBemessungsbetriebsstrom (le) bei DC-13, 220 V, 230 V Bemess.betriebsstrom (le) bei DC-13, 24 V Bemessungsbetriebsstrom (le) bei DC-13, 60 V Bemessungsbetriebsspannung (Ue) - maxSichere TrngSchaltvermögen (Hilfskontakte, Steuerzyklus) Nennspannung - maxNennspannung - max Anzahl der Hilfskontakte (Wechsler)Anzahl der Hilfskontakte (Öffner)Anzahl Hilfskontakte (Schließer)Anzahl der Kontakte (Öffner)Anzahl der Kontakte (Schließer)Geräteverlustleistung, stromabhängig pvid Verlustleistungskapazität PdissVerlustleistung pro Pol, stromabhängig, Pvid Bemessungsbetriebsstrom zur Verlustleistungsangabe (In) Statische Verlustleistung, stromunabhängig PVS10.2.2 Korrosionsbeständigkeit10.2.3.1 Wärmebeständigkeit von Umhüllung10.2.3.2 Widerstandsfähigkeit Isolierstoffe gewöhnliche Wärme 10.2.3.3 Widerst. Isolierstoffe abnorm. Wärme/Feuer durch int. elektr. Auswirk.10.2.4 Beständigkeit gegen UV-Strahlung10.2.5 Hebenmüssen.Unzutreffend, da die gesamten Schaltgeräte überprüft werdenmüssen.Anforderungen der Produktnorm sind erfüllt.Unzutreffend, da die gesamten Schaltgeräte überprüft werden müssen.Anforderungen der Produktnorm sind erfüllt.Unzutreffend, da die gesamten Schaltgeräte überprüft werden müssen.Unzutreffend, da die gesamten Schaltgeräte überprüft werden müssen.Liegt in der Verantwortung des Schaltanlagenbauers.Liegt in der Verantwortung des Schaltanlagenbauers.Liegt in der Verantwortung des Schaltanlagenbauers.Liegt in der Verantwortung des Schaltanlagenbauers.Liegt in der Verantwortung des Schaltanlagenbauers.Die Erwärmungsberechnung liegt in der Verantwortung des Schaltanlagenbauers. Eaton stellt Verlustleistungsdaten der Geräte bereit.Liegt in der Verantwortung des Schaltanlagenbauers. Die Spezifikationen für die Schaltgeräte müssen beachtet werden.Liegt in der Verantwortung des Schaltanlagenbauers. Die Spezifikationen für die Schaltgeräte müssen beachtet werden.Das Gerät erfüllt die Anforderungen, wenn die Informationen in eaton-motor-protective-relay-zb12-zb32-overload-monitoring-exe-manual-mn03407004z-de-de-en-us.pdfDA-DC-00004853.pdfDA-DC-00004843.pdfETN.ZB32-0,16IL03407015ZIL03407195ZSortimentskatalog Motoren schalten und schützenDA-CD-zb32DA-CS-zb3210.2.6 Schlagprüfung10.2.7 Beschriftungen10.3 Schutzart von Baugruppen10.4 Luft- und Kriechstrecken10.5 Schutz gegen elektrischen Schlag10.6 Einbau von Betriebsmitteln10.7 Innere Stromkreise und Verbindungen10.8 Anschlüsse für von außen eingeführte Leiter 10.9.2 Betriebsfrequente Spannungsfestigkeit 10.9.3 Stoßspannungsfestigkeit10.9.4 Prüfung von Umhüllungen aus Isolierstoff 10.10 Erwärmung10.11 Kurzschlussfestigkeit10.12 Elektromagnetische Verträglichkeit10.13 Mechanische Funktion Benutzerhandbücher Declarations of conformity eCAD model Installationsanleitung KatalogemCAD modelEaton Konzern plc Eaton-Haus30 Pembroke-Straße Dublin 4, Irland © 2023 Eaton. Alle Rechte vorbehalten. Eaton ist eine eingetrageneMarke.Alle anderen Warenzeichen sindEigentum ihrer jeweiligenBesitzer./socialmediader Montageanweisung (IL) beachtet werden.。

布德电子产品说明书

17Use on Bud Cabinet Racks: Series 60, Series 2000, ValuRack, Classic II and Economizer. 12 Gauge Steel. Sold in pairs. Rail mounting hardware included. (Uses #7346 equipment mounting screws - order separately.) Finish: BlackMounting RailsChassisSupport BracketsAttaches to panel mounting rail accessory flange, heavy duty 14 ga. steel. Finish: Black. Sold in pairs. Requires two pairs of panel mounting rails per cabinet rack.Catalog No.Length Weight (Lbs.)Cable Management Bracket SetsHeavy gauge steel bracket mounts in any direction with one screw mounting. Package contains six brackets, six 12˝ Velcro cable straps and all mounting hardware. Management panels occupy 1U (1.75˝)of panel space height, and are available for both 19˝ and 23˝ panel widths. Comes complete with 8˝ Velcro cable straps and all mounting hardware. 1.70˝LengthAdapter Bracketchassis support brackets for use on open rack. Package Catalog No.Est. Weight (Lbs.)Catalog No.Style Size (W × L)Wt. Oz.CMS-2218-BB.75˝ × 18.00˝4.6CableManagement StrapsVelcro cable straps in two styles. Comes in packages of 25 straps. Color: BlackStyle AStyle BCatalog No.18Panel ExtenderHeavy gauge steel brackets extend panels 5.00˝ beyond normal panel mounting rails. Panel mounting holes on EIAuniversal spacing. Finish: Black. Sold in pairs. Includes all mounting hardware.racks. Heavy gauge steel Available in Black. Includes all Cable BracketHeavy gauge steel brackets occupy 1U (1.75˝) of panel space. Finish: Black. Includes all mounting hardware.Cable Management Designed for 19˝ panel width racks. Heavy 18 gauge formed steelpanel, with twelve plastic cable clips. Finish: Black. Includes all mounting hardware. Accessories: Additional plastic cable clips catalog No. CM-1229. Twelve clips per package.Cable Management PanelDesigned for 19˝ panel width racks. Heavy 18 gauge formed steel panel withtwenty-four plastic cable clips and three CM-1220 cable rings. Finish: Black. Includes all mounting hardware. Accessories: Additional plastic cable clips catalog No. CM-1229. Twelve clips per package.Cableway CoverFormed steel covers mount to the front and rear of cableway rings to protect cables and present afinished look to your cabling installation. Finish: Black. Used on 7’ tall open racks. Sold in pairs. Includes all mounting hardware.Equipment Tie Down BracketHeavy gauge steel bracket, in 19˝ panel width, will secure your equipment within open or enclosed cabinet racks. Frontpanels are 1U (1.75˝) high.Black Texture (BT) or Metallic Gray (MG) Includes all mounting hardware.Catalog No.Panel HeightEst. Weight Lbs.PE-1600 3.50˝1Catalog No.Size (W × D)Est. Weight Lbs.Catalog No.Size (W × D)Est. Weight Lbs.Catalog No.Size (H × W)Est. Weight Lbs.CM-12273.50˝ × 19.00˝3Catalog No.Size (W × D)Est. Weight Lbs.CM-12231.75˝ × 3.50˝1See our online rack and accessory selector guide at /rackguide.htmlCable ManagementSnap-in spring steel cableclips available in two sizes.In packages of 3 clips.AdapterMountingBrackets16-gauge steelbrackets used formounting 19˝ wideequipment into open rackswith 23˝ and 24˝ wide panel spaces and enclosed cabinet rackswith 24˝ wide panel spaces. Mounting hole locations conform to EIAspecs. Finish is Black Texture (BT). Comes complete with all mountingAllows for the organizationand protection of cables onslide-mounted equipment.Mounts to panel mountingrail at rear of cabinet rack,and can be used on both theleft and right sides of thecabinet. Wide support arms allow for the use of either ribbon cableStationaryKeyboard/MouseShelfHeavy gauge steel shelfmounts to any 19˝ panelwidth open rack. Comeswith 9.00˝ × 7.00˝ mousetray that can be bolted on to either the left or right hand side of theshelf. Takes up 1U (1.75˝) of panel space. Finish: Black Texture (BT) orMetallic Gray (MG). Includes all mounting hardware.gauge steel shelf mountsto any 19˝ or 23˝ panelwidth open rack. Includes4.00˝ high × 10.50˝ wideintegrated switch box compartment.Finish: BlackTexture (BT) or Metallic Gray (MG). Includes allmounting hardware.Sliding Keyboard/Mouse ShelfSliding keyboard shelf fits19˝ and 23˝ panel widthracks. Mouse pad slides outfrom underneath the shelf ineither the right or left side.Takes up 2U (3.50˝) of panel space. Overalldepth: 12.50˝. Black Texture (BT) orMetallic Gray (MG). Includes all mounting hardware.Catalog No.Size (W × D)Weight Lbs.CM-2220.56˝ × 3.75˝.5See our online rack andaccessory selector guide at/rackguide.html19。

1875425资料

Extract from the onlinecatalogIMCV 1,5/ 2-G-3,81Order No.: 1875425The figure shows a 16-pos. version of the producthttp://eshop.phoenixcontact.de/phoenix/treeViewClick.do?UID=1875425Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81 mm, no. of positions: 2, mounting: Solderinghttp://Please note that the data givenhere has been taken from theonline catalog. For comprehensiveinformation and data, please referto the user documentation. TheGeneral Terms and Conditions ofUse apply to Internet downloads. Technical dataDimensions / positionsPitch 3.81 mmDimension a 3.81 mmNumber of positions2Pin dimensions0,8 x 0,8 mmHole diameter 1.2 mmTechnical dataInsulating material group IRated surge voltage (III/3) 2.5 kVRated surge voltage (III/2) 2.5 kVRated surge voltage (II/2) 2.5 kVRated voltage (III/2)160 VRated voltage (II/2)320 VConnection in acc. with standard EN-VDENominal current I N8 ANominal voltage U N160 VMaximum load current8 AInsulating material PAInflammability class acc. to UL 94V0Certificates / ApprovalsApproval logoCULNominal voltage U N300 VNominal current I N8 AULNominal voltage U N300 VNominal current I N8 ACertification CB, CUL, GOST, UL, VDE-PZIAccessoriesItem Designation DescriptionMarking0804109SK 3,81/2,8:FORTL.ZAHLEN Marker card, printed horizontally, self-adhesive, 10-section markerstrip, 14 identical decades marked 1-10, 11-20 etc. up to 91-(99)100, sufficient for 140 terminal blocksAdditional productsItem Designation DescriptionGeneral1897801EMC 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Press in1860647EMCV 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Press in1857883IMC 1,5/ 2-ST-3,81Plug component, nominal current: 8 A, rated voltage: 160 V, pitch:3.81 mm, no. of positions: 2, type of connection: Screw connection 1803277MC 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1908761MC 1,5/ 2-G-3,81 THT Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: SMD/THT1829950MCD 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1843075MCD 1,5/ 2-G1-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1830402MCDV 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1847725MCDV 1,5/ 2-G1-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1803426MCV 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1837450MCVDU 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: Soldering1827279SMC 1,5/ 2-G-3,81Header, nominal current: 8 A, rated voltage: 160 V, pitch: 3.81mm, no. of positions: 2, mounting: SolderingDrawingsDrilling diagramDimensioned drawingAddressPHOENIX CONTACT GmbH & Co. KGFlachsmarktstr. 832825 Blomberg,GermanyPhone +49 5235 3 00Fax +49 5235 3 41200http://www.phoenixcontact.de© 2008 Phoenix ContactTechnical modifications reserved;。

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MURATA GQM1875C2E2R0BB12D
Data Sheet
Capacitors > Monolithic Ceramic Capacitors
Monolithic Ceramic Capacitors (High Frequency)
GQM1875C2E2R0BB12p (0603, C0G, 2.0pF, 250Vdc)
p: packaging code
melting point is used. Please confirm the solderability of Tin plating termination chip before use. o Use of Sn-Zn based solder will deteriorate reliability of MLCC. Please check with our sales represetatives for the use of Sn-Zn based solder in advance.
RoHS regulation conformity parts
e
g
e
T
L
I Dimensions
Length L Width W Thickness T Electrode e Electrode Gap g (min.)
1.6mm±0.15mm 0.8mm±0.15mm 0.7mm±0.1mm
0.2 to 0.5mm 0.5mm
• The RoHS compliance means that we judge from EU Directive 2002/95/EC the products do not contain lead, cadmium, mercury, hexavalent chromium, PBB and PBDE, except exemptions stated in EU Directive 2002/95/EC annex and impurities existing in natural world.
Code
Packaging
D
180mm Paper Tape
J
330mm Paper Tape
B
Bulk(Bag)
Minimum Quantity 4000 10000 1000
I Specifications
Please refer to 'GQM Series Specification and Test Methods' PDF file.
• This statement does not insure the compliance of any of the listed parts with any laws or legal imperatives developed by any EU members individually with regards to the RoHS Directive.
o This data sheet is applied for CHIP MONOLITHIC CERAMIC CAPACITOR used for General Electronics equipment for your design. <Notice> o Solderability of Tin plating termination chip might be deteriorated when low temperature soldering profile where peak solder temperature is below the Tin
2. This datasheet has only typical specifications because there is no space for detailed specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering. 2010.11.4
! Note:
1. This datasheet is downloaded from the website of Murata Manufacturing co., ltd. Therefore, it’s specifications are subject to change or our products in it may be discontinued without advance notice. Please check with our sales representatives or product engineers before ordering.

I Rated Value
Murata PN Code
Spec
Temperature Char.
5C
C0G (EIA), 0±30ppm/°C
Capacitance
2R0
2.0pF
Capacitance Tol.
B
±0.1pF
Rated Voltage
2E
250Vdc
W
(in mm)
I Packaging