A1776中文资料

Denotes hFE
2SA1727 CPT3 PQ
TL 3000
2SA1776 ATV PQ
TV2 2500
Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current tranfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time
0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6 -1.8 -2.0 COLLECTOR TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation characteristics
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : lC (A)
Transistors
2SA1812 / 2SA1727 / 2SA1776
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
100000 10000
(1) When mounted on a 40 40 0.7mm ceramic board
IC 100mA, RL 1.5k IB1 IB2 10mA VCC to 150V
Rev.A
1/3
COLLECTOR CURRENT : lC (A) --210800mmAA
DC CURRENT GAIN : hFE
Transistors
Electrical characteristic curves
PW=10ms 100ms
-0.2 -0.ห้องสมุดไป่ตู้ -0.05
-0.02
-0.01
-0.005
Ta=25°C Single
nonrepetitive -0.002 pulse -0.001
-1 -2 -5 -10 -20
-50-100-200 -500-1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Transistors
2SA1812 / 2SA1727 / 2SA1776
High-voltage Switching Transistor ( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area).
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.11 Safe operating area (2SA1727)
100000 10000
(1) Using Infinite heat sink (2) Unmounted
1000
(2) 100
(1) 10
1
0.1 0.001 0.01
2SA1812 2SA1727
2SA1776 Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC
PC
Tj Tstg
Limits 400 400 7 0.5 1.0 0.5 2 1 10 1 150
55 to +150
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.
-0.001
-1 -2 -5-10
-20 -50-100 -200-500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SA1812)
TRANSITION FREQUENCY : fT (MHZ)
Rev.A
2/3
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
Ta=25°C VCE=-5V
200 100
50
20 10
5
2
1
0.0005 0.002 0.01 0.02 0.050.1 0.2 0.5
0.001
0.005
COLLECTOR CURRENT : IE (A)
Fig.7 TRANSITION FREQUENCY vs. EMITTER CURRENT
Fig.5 Collector-emitter saturation voltage vs. collector current
1000 500
200 100
50
Ta=25°C f=1MHZ lE=0A
20 10
5
2 1 -0.05-0.1 -0.2-0.5-1 -2 -5-10 -20 -50
COLLECTOR TO BASE VOLTAGE: VCB (V)
COLLECTOR OUTPUT CAPACITANCE : COb (pF)
-10 Ta=25°C
-5
-2 -1 -0.5
-0.2 -0.1 -0.05
lC/lB=5020 10
-0.02
-0.01 -0.001 -0.005 -0.02 -0.1 -0.2-0.5 -1 -0.002 -0.01 -0.05 COLLECTOR CURRENT : IC (A)
1000 500
Ta=25°C
200 VCE=-10V
100
50
-5V
20 10
5
2
1 -0.001 -0.005 -0.02 -0.1 -0.2-0.5 -1
-0.002 -0.01 -0.05 COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1000 500
200 100
50
Ta=100°C 25°C
Fig.1 Grouded emitter output characteristics
COLLECTOR CURRENT : lC (A)
Ta=100°C 25°C -25°C
-1 VCE=-5V
-0.5
-0.2 -0.1 -0.05
-0.02 -0.01 -0.005
-0.002 -0.001 -0.0005
Symbol BVCBO BVCEO BVEBO
ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg
tf
Min. 400 400
7
82
Typ.
150
12 18 0.6 2.7 1
Max.
10 10 270 1 1.2
Unit V V V A A
V V MHz pF s s s
(2) Unmounted
1000
(2)
100
(1)
10
1
0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : PW (s)
Fig.10 TRANSIENT THERMAL RESISTANCE (2SA1812)
COLLECTOR CURRENT : lC (A)
Unit
V
V
V
A (DC)
A (Pulse) 1
W
W
2
W
W (Tc 25°C)
W
3
°C
°C
Packaging specifications and hFE
Type Package
hFE Marking
Code Basic ordering unit (pieces)
2SA1812 MPT3 PQ AJ T100 3000
0.1 1 10 TIME : t (s)
100 1000
Fig.12 TRANSIENT THERMAL RESISTANCE (2SA1727)
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
-10 -5
-2 -1
lC Max. (Pulse )
-0.5 DC
-10 -5
-2 -1
-0.5
lC Max. (Pulse ) DC
PW=10ms 100ms
-0.2 -0.1 -0.05
-0.02
-0.01
-0.005
Tc=25°C Single
nonrepetitive -0.002 pulse
-0.001-1 -2 -5 -10 -20
-50-100-200 -500-1000
Fig.8 Collector output capacitance vs. collector-base voltage
COLLECTOR CURRENT : lC (A)
-10 lC/lB=10
-5
-2 -1 -0.5
-0.2 -0.1 -0.05
Ta=-25°C
25°C 100°C
VBE(sat)
-10 -5
-2 -1
-0.5
lC Max. (Pulse )
PW=10ms 100ms
-0.2 -0.1
-0.05
Ta=25°C
-0.02 (When mounted on a
-0.01
40 40 0.7mm ceramic board.)
-0.005 Single
-0.002
nonrepetitive pulse
Fig.13 Safe operating area (2SA1776)
Conditions IC 50 A IC 1mA IE 50 A VCB 400V VEB 6V VCE 5V , IC 50mA IC/IB 100mA / 10mA IC/IB 100mA / 10mA VCB 5V , IE 50mA , f 5MHz VCE 10V , IE 0A , f 1MHz
100mA /
10mA.
Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector power dissipation
-25°C
VCE=-5V
20 10
5
2
1 -0.001 -0.005 -0.02 -0.1 -0.2-0.5 -1
-0.002 -0.01 -0.05 COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
1000 500
Ta=100°C
-25°C 25°C
VCE(sat)
-0.02
-0.01 -0.001 -0.005 -0.02 -0.1 -0.2-0.5 -1 -0.002 -0.01 -0.05 COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current
2SA1812 / 2SA1727 / 2SA1776
-0.5 -0.4 -0.3 -0.2
-16-0m14A-0m12A0m-A10-0m80AmA -60mA -40mA
lB=-20mA
-0.1
Ta=25°C
0
0
-2
-4
-6
-8 -10
COLLECTOR TO EMITTER VOLTAGE : VCE (V)