UF740 Power MOSFET

UNISONIC TECHNOLOGIES CO., LTDUF740 Power MOSFET10A, 400V, 0.55 OHM,N-CHANNEL POWER MOSFETDESCRIPTIONThe N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.FEATURES* 10A, 400V, R DS(ON)(0.55Ω)* Single Pulse Avalanche Energy Rated* Rugged - SOA is Power Dissipation Limited * Fast Switching Speeds* Linear Transfer Characteristics * High Input ImpedanceSYMBOL* Product number: Lead-free: UF740LORDERING INFORMATIONOrdering Number Pin AssignmentNormal Lead Free Plating Package 1 2 3 PackingUF740-TA3-T UF740L-TA3-T TO-220 G D S Tube UF740-TF3-T UF740L-TF3-T TO-220F G D STubeABSOLUTE MAXIMUM RATINGS (T C = 25°C, Unless Otherwise Specified)PARAMETER SYMBOL RATINGS UNITDrain to Source Voltage (T J =25°C~125°C) V DS 400 V Drain to Gate Voltage (R GS = 20k Ω) (T J =25°C~125°C) V DGR 400 V Gate to Source Voltage V GS ±20 VContinuous I D 10 AT C = 100°C I D 6.3 ADrain Current Pulsed I DM 40 A125 W Maximum Power DissipationDerating above 25°C P D1.0 W/°C Single Pulse Avalanche Energy Rating(Note3) E AS 520 mJOperating Temperature Range T OPR -55 ~ +150 °CStorage Temperature Range T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL RATINGS UNIT Thermal Resistance Junction-Ambient θJA 62.5Thermal Resistance Junction-Case θJc 1.0 °C/WELECTRICAL CHARACTERISTICS (T C =25°C, Unless Otherwise Specified.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain to Source Breakdown Voltage BV DSS V GS = 0V, I D = 250μA 400 V Gate to Threshold Voltage V GS(THR)V GS = V DS , I D = 250μA 2.0 4.0V On-State Drain Current (Note 1) I D(ON) V DS >I D(ON) x R DS(ON)MAX , V GS =10V 10 AV DS = Rated BV DSS , V GS = 0V 25μAZero Gate Voltage Drain Current I DSSV DS =0.8 x Rated BV DSS , V GS =0V,T J =125°C 250μAGate to Source Leakage Current I GSS V GS = ±20V ±500nA Drain to Source On Resistance(Note 1)R DS(ON)V GS = 10V, I D = 5.2A 0.47 0.55ΩForward Transconductance(Note 1)g FS V DS ≥ 50V, I D = 5.2A 5.8 8.9 STurn-On Delay Time t DLY(ON) 15 21nsRise Time t R 25 41nsTurn-Off Delay Time t DLY(OFF) 52 75nsFall Time t FV DD = 200V, I D ≈ 10A, R GS = 9.1Ω, R L = 20Ω, V GS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature 25 36ns Total Gate Charge(Gate to Source + Gate to Drain) Q G(TOT) 41 63nCGate to Source Charge Q GS 6.5 nC Gate to Drain “Miller” Charge Q GDV GS = 10V, I D = 10A V DS = 0.8 x Rated BV DSSI G(REF) = 1.5mA Gate Charge is Essentially Independent ofOperating Temperature23 nC Input Capacitance C ISS 1250 pFOutput Capacitance C OSS 300 pFReverse - Transfer Capacitance C RSS V GS = 0V, V DS =25V, f = 1.0MHz 80 pFELECTRICAL CHARACTERISTICS(Cont.)s 170s 1.6 NOTES:1. Pulse Test: Pulse width ≤ 300μs, Duty Cycle≤2%.2. Repetitive rating: Pulse width limited by maximum junction temperature.3. (V DD=50V, starting T J =25°C, L=9.1mH, R G=25Ω, peak I AS = 10A)TEST CIRCUITS AND WAVEFORMSSwitching Time Test CircuitResistive Switching WaveformsR LVDDPULSE WIDTHTYPICAL PERFORMANCE CUVES (Unless Otherwise Specified)DrainCurrent,ID(A)DrainCurrent,ID(A)DrainCurrent,ID(A)Drain to Source Voltage, V DS(V)4610Saturation Characteristics823691215Gate to Source Voltage, V SD(V)2810Transfer Characteristics0.111010064DraintoSourceCurrent,IDS(ON)(A)=5.0V=4.5VDUTY CYCLE = 0.5% MAX=5.5VGS=4.0V= 25DUTY CYCLE = 0.5% MAX50VNormalizedDraintoSourceBreakdownVoltageCapacitance,C(pF)TYPICAL PERFORMANCE CUVES (Cont.)Transconductance,gFS(S)SourcetoDrainCurrent,ISD(A)DraintoSourceonResistance,RDS(ON)(Ω)Drain Current, I D(A)104050Drain to Source on Resistance vs. Voltage and DrainCurrent25130202345VGatetoSourceVoltage,VGS(V)Gate Charge, Q G (nC)243660Gate to Source Voltage vs. Gate Charge481241216208DSexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.。