FQAF11N90C中文资料

IDR, Reverse Drain Current [A]
ID, Drain Current [A]
101 150oC
25oC 100
-55oC
10-1 2
※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
3.0 --
5.0
V
VGS = 10 V, ID = 3.5 A
-- 0.91 1.1
Ω
VDS = 50 V, ID = 3.5 A
(Note 4) --
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
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FQAF11N90C
Typical Characteristics
BV DSS , (Normalized) Drain-Source Breakdown Voltage
--
40
Units V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Units °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
FQAF11N90C
元器件交易网Biblioteka ------
--
IGSSF IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
--
--
10 100 100 -100
VGS Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1 10-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
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FQAF11N90C
FQAF11N90C
900V N-Channel MOSFET
QFET®
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies..
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 2530 3290 pF
-- 215 280
pF
-- 23
30
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
2.5
2.0 V = 10V
GS
VGS = 20V 1.5
1.0
※ Note : TJ = 25℃
0.5
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
12
V = 180V DS
10 V = 450V
DS
V = 720V
8
DS
6
4
2
※ Note : ID = 11A
0
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2003
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 11.0 A,
-- 1000 --
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4) -- 17.0
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
元器件交易网
FQAF11N90C
Typical Characteristics
ID, Drain Current [A]
DS(ON) R [Ω ], Drain-Source On-Resistance
2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQAF11N90C 900 7.0 4.4 28.0 ± 30 960 7.0 12 4.0 120 0.96
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 11.0 A, RG = 25 Ω
--
60 130
ns
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Capacitance [pF]
©2003 Fairchild Semiconductor Corporation
VGS, Gate-Source Voltage [V]
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
7.0
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- 28.0
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A
Figure 2. Transfer Characteristics
101
100 10-1
0.2
150℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
Electrical Characteristics