MRF9060MR1资料

MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 223 1.79 –65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22–A113 MRF9060MR1 MRF9060MBR1 Rating 1 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
η
37
40
—
%
IMD
—
–31.5Leabharlann –28dBcIRL
—
–14.5
–9
dB
Gps
—
18
—
dB
η
—
40
—
%
IMD
—
–31
—
dBc
IRL
—
–12.5
—
dB
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 3
元器件交易网
VGG C6 RF INPUT
B1 + C7 L1 C4 Z1 C1 Z2 Z3 Z4 Z5 C2 Z6 Z7 Z8 C3 Z9 C5 Z10 DUT Z11 C9 Z12 Z13 Z14 L2
B2 C14 + C15 + C16 + C17
VDD RF OUTPUT
Z15
Z16
Z17
Z18 C13
C8
C10
C11
C12
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
REV 4
MOTOROLA RF DEVICE DATA Motorola, Inc. 2002
MRF9060MR1 MRF9060MBR1 1
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ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model MRF9060MR1 MRF9060MBR1 Class 1 (Minimum) M2 (Minimum) C6 (Minimum) C5 (Minimum)
MRF9060MR1 MRF9060MBR1 2
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHZ) Gps 17 18 — dB Symbol Min Typ Max Unit
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 18.0 dB Efficiency — 40% (Two Tones) IMD — –31.5 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. • TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 101 53 2.5 — — — pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 3 — — 2.8 3.7 0.21 5.3 4 5 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit
0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.100″ x 0.270″ x 0.080″, Taper 0.330″ x 0.270″ Microstrip 0.120″ x 0.270″ Microstrip 0.270″ x 0.520″ x 0.140″, Taper 0.240″ x 0.520″ Microstrip 0.340″ x 0.520″ Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18
0.060″ x 0.520″ Microstrip 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.130″ x 0.060″ Microstrip 0.300″ x 0.060″ Microstrip 0.210″ x 0.060″ Microstrip 0.600″ x 0.060″ Microstrip 0.290″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.56 Unit °C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF9060M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
MRF9060MR1 MRF9060MBR1
945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265–07, STYLE 1 TO–270 DUAL LEAD PLASTIC MRF9060MR1
CASE 1337–01, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9060MBR1