PROCESS FOR PRODUCING SINGLE CRYSTAL, SINGLE CRYS
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专利名称：PROCESS FOR PRODUCING SINGLE CRYSTAL, SINGLE CRYSTAL AND SINGLE CRYSTAL
PRODUCTION APPARATUS
发明人：MORI, Tatsuo,MIZUISHI, Kouji,FUSEGAWA, Izumi,YAMAGISHI, Hirotoshi
申请号：JP2004014726
申请日：20041006
公开号：WO05/035838P1
公开日：
20050421
专利内容由知识产权出版社提供
摘要：A process for producing a single crystal by pulling up the same from a raw material melt according to the Czochralski technique, characterized in that when, disposing a forced cooling tube constituted of a material of 300 W/m K or higher thermal conductivity above the aw material melt so as to surround the single crystal being pulled up, the single crystal is pulled up while cooling the single crystal with cooling medium fed into the forced cooling tube, the thermal stress generated in the forced cooling tube is controlled so as not to be greater than the yield stress of the forced cooling tube. There is further provided a single crystal production apparatus therefor. By virtue of the thus provided process for producing a single crystal and single crystal production apparatus, in the production of a single crystal by pulling up the same from a raw material melt according to the CZ technique, cooling of the single crystal can be effectively carried out without the occurrence of metal contamination, and further without the deformation of cooling tube, the pullup of single crystal ensuring desired defect region can be performed stably at high speed.
申请人：MORI, Tatsuo,MIZUISHI, Kouji,FUSEGAWA, Izumi,YAMAGISHI, Hirotoshi 地址：JP,JP,JP,JP,JP
国籍：JP,JP,JP,JP,JP
代理机构：YOSHIMIYA, Mikio
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