NJL3281D_06资料
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MARKING DIAGRAM SCHEMATIC
NJLxxxxDG AYYWW
Thermal Trak
NJLxxxxD = Device Code
xxxx = 3281 or 1302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device NJL3281D NJL3281DG
NJL1302D NJL1302DG
Package
TO−264 TO−264 (Pb−Free) TO−264
TO−264 (Pb−Free)
Shipping 25 Units / Rail 25 Units / Rail
♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
VCEO(sus)
Vdc
260
−
ICBO
mAdc
−
50
IEBO
mAdc
−
5
hFE VCE(sat)
75
150
75
150
75
150
75
150
45
−
Vdc
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 5 V
PNP NJL1302D 45
40
1.5 A
IB = 2 A
35
30 1A
25 0.5 A
20
15
10
5.0
TJ = 25°C
0
Features
• Thermally Matched Bias Diode • Instant Thermal Bias Tracking • Absolute Thermal Integrity • High Safe Operating Area • Pb−Free Packages are Available*
Collector Cutoff Current (VCB = 260 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc)
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 2
BIPOLAR POWER TRANSISTORS
15 AMP, 260 VOLT, 200 WATT
TO−264, 5 LEAD CASE 340AA STYLE 1
Figure 4. DC Current Gain, VCE = 5 V
NPN NJL3281D
45
1.5 A
IB = 2 A
40
35
1A
30 0.5 A
25
20
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Typical Output Characteristics
ATTRIBUTES ESD Protection Flammability Rating
Characteristic
Human Body Model Machine Model
Value
>8000 V > 400 V
UL 94 V−0 @ 0.125 in
2
元器件交易网
−
3
fT
MHz
30
−
Cob
pF
−
600
vF
V
1.1
0.93
iR
mA
10
100
trr
100
ns
3
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0
5.0
10
15
20
25
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Typical Output Characteristics
IC, COLLECTOR CURRENT (A)
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
IB PD
TJ, Tstg VR
IF(AV)
1.5 200 1.43
− 65 to +150 200 1.0
Adc W W/°C °C V A
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.625
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature
Response
• Significantly Improved Bias Stability • Simplified Assembly
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
Complementary ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
VCEO VCBO VEBO VCEX
IC
260
Vdc
260
Vdc
5
Vdc
260
Vdc
15
Adc
25
Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous − Peak (Note 1)
25 Units / Rail 25 Units / Rail
Publication Order Number: NJL3281D/D
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
NJL3281D (NPN) NJL1302D (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS PNP NJL1302D
NPN NJL3281D
50
60
VCE = 10 V
VCE = 10 V
50
40
5V
5V
40
30
30
20 20
10 TJ = 25°C ftest = 1 MHz
♦ Reduced Labor Costs ♦ Reduced Component Count
• High Reliability
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers ♦ Home Receivers
• Professional Audio Amplifiers
10 TJ = 25°C ftest = 1 MHz
0
0.1
1.0
0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C)
Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C)
PNP0
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
TJ = 100°C 25°C
100
−25 °C
TJ = 100°C 100
25°C −25 °C
NJLxxxxDG AYYWW
Thermal Trak
NJLxxxxD = Device Code
xxxx = 3281 or 1302
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
ORDERING INFORMATION
Device NJL3281D NJL3281DG
NJL1302D NJL1302DG
Package
TO−264 TO−264 (Pb−Free) TO−264
TO−264 (Pb−Free)
Shipping 25 Units / Rail 25 Units / Rail
♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs)
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
2. Diode Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol
Min
Max
Unit
VCEO(sus)
Vdc
260
−
ICBO
mAdc
−
50
IEBO
mAdc
−
5
hFE VCE(sat)
75
150
75
150
75
150
75
150
45
−
Vdc
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, VCE = 5 V
PNP NJL1302D 45
40
1.5 A
IB = 2 A
35
30 1A
25 0.5 A
20
15
10
5.0
TJ = 25°C
0
Features
• Thermally Matched Bias Diode • Instant Thermal Bias Tracking • Absolute Thermal Integrity • High Safe Operating Area • Pb−Free Packages are Available*
Collector Cutoff Current (VCB = 260 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc)
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 2
BIPOLAR POWER TRANSISTORS
15 AMP, 260 VOLT, 200 WATT
TO−264, 5 LEAD CASE 340AA STYLE 1
Figure 4. DC Current Gain, VCE = 5 V
NPN NJL3281D
45
1.5 A
IB = 2 A
40
35
1A
30 0.5 A
25
20
15
10
5.0
TJ = 25°C
0
0
5.0
10
15
20
25
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. Typical Output Characteristics
ATTRIBUTES ESD Protection Flammability Rating
Characteristic
Human Body Model Machine Model
Value
>8000 V > 400 V
UL 94 V−0 @ 0.125 in
2
元器件交易网
−
3
fT
MHz
30
−
Cob
pF
−
600
vF
V
1.1
0.93
iR
mA
10
100
trr
100
ns
3
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
0
5.0
10
15
20
25
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Typical Output Characteristics
IC, COLLECTOR CURRENT (A)
VCE = 5 V
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (AMPS)
Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
IB PD
TJ, Tstg VR
IF(AV)
1.5 200 1.43
− 65 to +150 200 1.0
Adc W W/°C °C V A
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
0.625
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
Benefits
• Eliminates Thermal Equilibrium Lag Time and Bias Trimming • Superior Sound Quality Through Improved Dynamic Temperature
Response
• Significantly Improved Bias Stability • Simplified Assembly
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
Complementary ThermalTrakt Transistors
The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications. They can also be used in other applications as transistor die protection devices.
VCEO VCBO VEBO VCEX
IC
260
Vdc
260
Vdc
5
Vdc
260
Vdc
15
Adc
25
Base Current − Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range DC Blocking Voltage Average Rectified Forward Current THERMAL CHARACTERISTICS
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage − 1.5 V
Collector Current
− Continuous − Peak (Note 1)
25 Units / Rail 25 Units / Rail
Publication Order Number: NJL3281D/D
元器件交易网
NJL3281D (NPN) NJL1302D (PNP)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating
NJL3281D (NPN) NJL1302D (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
TYPICAL CHARACTERISTICS PNP NJL1302D
NPN NJL3281D
50
60
VCE = 10 V
VCE = 10 V
50
40
5V
5V
40
30
30
20 20
10 TJ = 25°C ftest = 1 MHz
♦ Reduced Labor Costs ♦ Reduced Component Count
• High Reliability
Applications
• High−End Consumer Audio Products
♦ Home Amplifiers ♦ Home Receivers
• Professional Audio Amplifiers
10 TJ = 25°C ftest = 1 MHz
0
0.1
1.0
0
10
0.1
1.0
10
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain Bandwidth Product
Figure 2. Typical Current Gain Bandwidth Product
Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C)
Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms)
Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C)
PNP0
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
IC, COLLECTOR CURRENT (A)
TJ = 100°C 25°C
100
−25 °C
TJ = 100°C 100
25°C −25 °C