Method of zinc oxide film grown on the epitaxial l
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专利名称：Method of zinc oxide film grown on the
epitaxial lateral overgrowth gallium nitride
template
发明人：Soon Jin Chua,Hailong Zhou,Jianyi Lin,Hui Pan
申请号：US12288977
申请日：20081024
公开号：US20100102307A1
公开日：
20100429
专利内容由知识产权出版社提供
专利附图：
摘要：A growth method is proposed for high quality zinc oxide comprising the
following steps: (1) growing a gallium nitride layer on a sapphire substrate around a
temperature of 1000° C.; (2) patterning a SiOmask into stripes oriented in the gallium nitride <1 00> or <11 0> direction; (3) growing epitaxial lateral overgrowth of (ELO) gallium nitride layers by controlling the facet planes via choosing the growth temperature and the reactor; (4) depositing zinc oxide films on facets ELO gallium nitride templates by chemical vapor deposition (CVD). Zinc oxide crystal of high quality with a reduced number of crystal defects can be grown on a gallium nitride template. This method can be used to fabricate zinc oxide films with low dislocation density lower than 10/cm, which will find important applications in future electronic and optoelectronic devices.
申请人：Soon Jin Chua,Hailong Zhou,Jianyi Lin,Hui Pan
地址：Singapore SG,Singapore SG,Singapore SG,Singapore SG
国籍：SG,SG,SG,SG
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