MRF5S19060MBR1中文资料
MRF9060MR1资料
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 223 1.79 –65 to +150 175 Unit Vdc Vdc Watts W/°C °C °C
MOISTURE SENSITIVITY LEVEL
Test Methodology Per JESD 22–A113 MRF9060MR1 MRF9060MBR1 Rating 1 3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
η
37
40
—
%
IMD
—
–31.5Leabharlann –28dBcIRL
—
–14.5
–9
dB
Gps
—
18
—
dB
η
—
40
—
%
IMD
—
–31
—
dBc
IRL
—
–12.5
—
dB
MOTOROLA RF DEVICE DATA
MRF9060MR1 MRF9060MBR1 3
元器件交易网
VGG C6 RF INPUT
B1 + C7 L1 C4 Z1 C1 Z2 Z3 Z4 Z5 C2 Z6 Z7 Z8 C3 Z9 C5 Z10 DUT Z11 C9 Z12 Z13 Z14 L2
MRF15090中文资料
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 Ω) V(BR)CEO V(BR)CES V(BR)CER 25 60 30 28 65 — — — — Vdc Vdc Vdc (continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
©MOTOROLA RF DEVICE DATA Motorola, Inc. 1994
– 60
1460 1480 1500 f, FREQUENCY (MHz)
1520
1540
0 1560
Figure 3. Intermodulation Distortion versus Output Power
Figure 4. Performance in Broadband Circuit
IMD, INTERMODULATION DISTORTION (dBc)
Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)EBO ICES 4 — 4.8 — — 10 Vdc mAdc
MCC MBR30150FCT 150V 电阻器数据手册说明书
Features30 AmpSchottky BarrierRectifier 150 Volts•Low Power Loss, High Efficiency•Guardring F or O vervoltage P rotection•Low Forward Voltage Drop A nd High Frequency Operation•For U se in H igh F requency I nverters,F ree W heeling A nd P olarity P rotection A pplications•Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix D esignates RoHS Compliant. See O rdering I nformation)•Halogen Free Available Upon Request By Adding Suffix "-HF"•Epoxy Meets UL 94 V-0 Flammability Rating Maximum RatingsMBR30150FCT 150V150VMCC Part NumberDevice MarkingMaximum Recurrent Peak Reverse VoltageMaximum RMS Voltage Maximum DC Blocking Voltage •Operating Junction Temperature Range: -55⁰C to +150⁰C •Storage Temperature Range: -55⁰C to +150⁰C•Typical Thermal Resistance Per Leg: 4.0⁰C/W Junction to Case Electrical Characteristics @ 25°C Unless Otherwise SpecifiedMaximum R everse C urrent P er L eg at W orking P eak R everse V oltageI R5.0µA T J =25⁰C V FMaximum A verageF orward R ectified C urrent I F(AV)30A (See Fig.1)Maximum Instantaneous Forward Voltage P er L eg (Note 5)0.90VNote :1. High Temperature Solder Exemption Applied, see EU Directive Annex 7a .1.0m A T J =125⁰C Voltage R ate of C hange (R ated V R )dv/dt 10,000V/us Peak R epetitive R everse C urrent P er L eg I RR M1.0A0.75V 0.99V 0.86V I F =15A ,T C =25⁰C I F =15A ,T C =125⁰C I F =30A ,T C =25⁰C I F =30A ,TC =125⁰C RMS Isolation V oltage (MBRF type only) F rom T erminals to H eatsink W ith t = 1.0 S econd, RH ≤30%4500VV I SOL3500V 1500V( Note 2)( Note 3)( Note 4)2.Clip mounting (on case), where lead does not overlap heatsink with 0.110" offset3.Clip mounting (on case), where leads do overlap heatsink4.Screw mounting with 4-40 screw, where washer diameter is < 4.9 mm (0.19")5.Pulse test: 300us pulse width, 1% duty cyclePIN 1PIN 3Internal StructurePeak Forward Surge CurrentI FSM 260A 8.3ms,H alf S inetp = 2.0us, 1KHzMBR30150FCT 105VCurve Characteristics25501251501755101520253035A v e r a g e F o r w a r d C u r r e n t (A )75100Case Temperature (°C)Fig. 1 - Forward Current Derating Curve050100150200250300P e a k F o r w a r d S u r g e C u r r e n t (A )Fig. 2 - Maximum Non-Repetitive Peak Forward SurgeNumber of Cycles at 60 Hz0.20.52520500.1110I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )Fig. 3 - Typical Instantaneous Forward CharacteristicsInstantaneous Forward Voltage (V)0.010.11101001000I n s t a n t a n e o u s R e v e r s e L e a k a g e C u r r e n t (μA )Fig. 4 - Typical Reverse Leakage CharacteristicsPercent of Rated Peak Reverse Voltage (%)Ordering InformationDevice PackingPart Number-B P Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-B P-HF。
MBRS140;中文规格书,Datasheet资料
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™分销商库存信息: FAIRCHILD MBRS140。
MBR1050;MBR1045;MBR1060;MBR1035;中文规格书,Datasheet资料
20 10 MBR1035-MBR1045
1
MBR1050-MBR1060
0.1
T A= 125ºC TA = 75º C
0.01
MBR1035-MBR1045
TA = 25º C
0.001 0
MBR1050-MBR1060
20
40
60
80 100 120
Percent of Rated Peak Reverse Voltage [%]
INDUCTIVE LOAD
2 .375" (9.00mm) LOAD
LENGTHS
0 0 25 50 75 100 125 150 175 Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
Peak Forward Surge Current, IFSM [A]
0.5
Units
V V V V mA mA A
© 2012 Fairchild Semiconductor Corporation
MBR1035 - MBR1060 Rev. D0
1
/
MBR1035 - MBR1060 — Schottky Rectifie源自s354550
60
V
10
A
150
A
Tstg Storage Temperature Range
-65 to +175
°C
TJ Operating Junction Temperature
-65 to +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
RFSJZY05F02材料设备部品清单
RFSJZY05F02材料设备部品清单材料设备部品清单是指在特定项目中所需要使用的材料、设备和部件的清单。
RFSJZY05F02材料设备部品清单是指特定项目RFSJZY05F02所需要使用的材料、设备和部件的清单。
以下是RFSJZY05F02材料设备部品清单的详细清单：1.电子元器件1.1.微处理器：型号X10L1.2.存储芯片：型号S20M1.3.外围接口芯片：型号S30D1.4.传感器：型号S40S1.5.运算放大器：型号A10T1.6.电源管理芯片：型号P10V1.7.电阻：数量100，型号R1001.8.电容：数量100，型号C1001.9.线路板：数量10，型号B10P2.通信设备2.1.无线模块：型号W10F2.2.有线模块：型号E10L2.3.声学设备：型号A20S2.4.音频设备：型号A30A2.5.雷达设备：型号R10R3.机械部件3.1.齿轮：数量20，型号G20T 3.2.电机：数量5，型号M5E3.3.传动带：数量10，型号D10P 3.4.机械轴：数量5，型号A5M 3.5.弹簧：数量50，型号S50L3.6.刀具：数量10，型号T10F4.金属材料4.1. 钢材：数量1000kg4.2. 铝材：数量500kg4.3. 铜材：数量300kg4.4. 不锈钢材：数量800kg5.塑料材料5.1. PVC材料：数量500kg5.2. PE材料：数量300kg5.3. PP材料：数量200kg5.4. ABS材料：数量400kg6.电子设备6.1.示波器：型号O10S6.2.信号发生器：型号S10G6.3.多功能测试仪：型号T20M6.4.电源供应器：型号P20P6.5.焊接设备：型号W30L7.包装材料7.1.纸箱：数量1007.2.木箱：数量207.3.托盘：数量507.4.包装胶带：数量10卷以上是RFSJZY05F02材料设备部品清单的详细清单，总计超过1200字。
每个部件都有特定的型号和数量，以确保项目的正常进行和顺利完成。
MBR20150FCT肖特基规格书
Lead FreeFEATURES·Metal of silicon rectifier,majority carrier conducton ·Guard ring for transient protection ·Low power loss,high efficiency ·High current capability,low VF ·High surge capacity·Plastic package has UL flammability MECHANICAL DATA·Case :TO-220F ·Polarity :As marked on the body ·Mounting position :AnyMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25℃ambient temperature unless otherwise specified.Single phase,half wave,60HZ,resistive or inductive load.For capacitive load,derate current by20%20A Schottky Barrier RectifiersMBR20150FCTclassification 94V-0molded plastic TO-220F PACKAGECHARACTERISTICSSYMBOL MBR20150FCTUNIT Maximum Recurrent Peak Reverse Voltage VRRM 150 V Maximum RMS Voltage VRMS 105 V Maximum DC Blocking VoltageVcc 150 V Average Rectifier Forward Current ( per diode ) Total Device (Rated VR) @TC=125℃IF(AV)10 20 ANon-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 150 AMaximum Instantaneous Forward VoltageIF=10ATc=25℃ Tc=125℃ VF 0.92 0.85 VInstantaneous Reverse Current AT VRM Tc=25℃ Tc=125℃ IR 0.05 15 MA Typical Thermal Resistance R0JC 3.6 ℃/W Operating Temperature Range TJ -55to+175 ℃ Storage Temperature RangeTSTG-55to+175℃MBR20150FCT RATINGS AND CHARACTERISTIC CURVESFIG-1 FORWARD CURRENT DERATING CURVE FIG-2 TYPICAL FORWARD CHARACTERISITICS AVERAGEFORWARDRECTIFIEDCURRENT(Amp.)NSTANTANEOUSFORWARDCURRENT(Amp.)CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 TYPICAL REVERSE CHARACTERISTICSINSTANTANEOUSREVERSECURRENT(mA.)JUNCTIONCAPACITANCE(PF)REVERSE VOLTAGE (Volts) REVERSE VOLTAGE (Volts)FIG-5 PEAK FORWARD SURGE CURRENTPEAKFORWARDSURGECURRENT(Amp.)NUMBER OF CYCLES AT 60 Hz。
MBR1050资料
MBR1035-MBR1060MBR1035 - MBR1060, Rev. A©1999 Fairchild Semiconductor CorporationMBR1035 - MBR1060, Rev. ATRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。
MF0075M-03ATxx中文资料
A T A P C C A R D S8/16-bit Data Bus Flash ATA PC CardCo n n e cto rTy p eTwo- piece 68-pinDESCRIPTIONMitsubishi’s Flash ATA cards provide large memory capacities on a device approximatelythe size of a credit card(85.6mm ×54mm ×3.3mm). The cards use a 8/16bit data bus.Available in 7.5MB, 15MB, 30MB, 45MB,60MB, 75MB, 90MB and 105MB capacities,Mitsubishi’s Flash ATA cards conform to the JEIDA/PCMCIA standard.In default mode, the ATA card operates in P C Card compliant sockets. It conforms toPCMCIA2.1, JEIDA4.2 and PC Card Standard.When the OE# signal is asserted low level by the Host system in power on cycle, theMitsubishi’s Flash ATA cards can be selected in a IDE ATA interface. It uses the ATA command set so no software drivers are required.MF007M5-03ATxx MF0015M-03ATxx MF0030M-03ATxx MF0045M-03ATxx MF0060M-03ATxx MF0075M-03ATxx MF0090M-03ATxx MF0105M-03ATxxFEATURESSingle 5V or 3.3V SupplyCard density of up to 105MB maximum Nonvolatile, No Batteries Required functionAPPLICATION SPIN ASSIGNMENTPinPC CardMemory ModePC Card I/OModeIDE ATAInterface PinPC CardMemory ModePC Card I/OModeIDE ATAInterface Signal I/O Signal I/O Signal I/O Signal I/O Signal I/O Signal I/O1GND-GND-GND-35GND-GND-GND-2D3I/O D3I/O D3I/O36CD1#O CD1#O CD1#O 3D4I/O D4I/O D4I/O37D11I/O D11I/O D11I/O 4D5I/O D5I/O D5I/O38D12I/O D12I/O D12I/O 5D6I/O D6I/O D6I/O39D13I/O D13I/O D13I/O 6D7I/O D7I/O D7I/O40D14I/O D14I/O D14I/O 7CE1#I CE1#I CS0#I41D15I/O D15I/O D15I/O 8A10I A10I N.U-42CE2#I CE2#I CS1#I 9OE#I OE#I ATA SEL#I43VS1#O VS1#O VS1#O 10N.C-N.C-N.C-44N.U-IORD#I IORD#I 11A9I A9I N.U-45N.U-IOWR#I IOWR#I 12A8I A8I N.U-46N.C-N.C-N.C-13N.C-N.C-N.C-47N.C-N.C-N.C-14N.C-N.C-N.C-48N.C-N.C-N.C-15WE#I WE#I WE#I49N.C-N.C-N.C-16READY O IREQ#O INTRQ O50N.C-N.C-N.C-17Vcc-Vcc-Vcc-51Vcc-Vcc-Vcc-18N.C-N.C-N.C-52N.C-N.C-N.C-19N.C-N.C-N.C-53N.C-N.C-N.C-20N.C-N.C-N.C-54N.C-N.C-N.C-21N.C-N.C-N.C-55N.C-N.C-N.C-22A7I A7I N.U-56CSEL I CSEL I CSEL I 23A6I A6I N.U-57VS2#O VS2#O VS2#O 24A5I A5I N.U-58RESET I RESET I RESET#I 25A4I A4I N.U-59WAIT#O WAIT#O IORDY O 26A3I A3I N.U-60N.U-INPACK#O INPACK#O 27A2I A2I A2I61REG#I REG#I REG#I 28A1I A1I A1I62BVD2O SPKR#O DASP#I/O 29A0I A0I A0I63BVD1O STSCHG#O PDIAG#I/O 30D0I/O D0I/O D0I/O64D8I/O D8I/O D8I/O 31D1I/O D1I/O D1I/O65D9I/O D9I/O D9I/O 32D2I/O D2I/O D2I/O66D10I/O D10I/O D10I/O 33WP O IOIS16#O IOCS16#O67CD2#O CD2#O CD2#O 34GND-GND-GND-68GND-GND-GND-N.C = Not connected internally. N.U = Not used.Signal DescriptionSignal Name I/O Pin No.DescriptionAddress bus[A10-A0]I8, 11, 12, 22,23, 24, 25, 26,27, 28, 29Signals A10-A0 are address bus. A0 is invalid in word mode. A10 is the MSB and A0 is the LSB.Data bus[D15-D0]I/O41, 40, 39, 38,37, 66, 65, 64,6, 5, 4, 3,Signals D15-D0 are data bus. D0 is the LSB of the Even Byte of the Word. D8 is the LSB of the Odd Byte of the Word.2 ,32,31, 30Card Enable[CE1#, CE2#](PC Card Memory Mode)I7, 42CE1# and CE2# are low active card select signals.Card Enable[CE1#, CE2#](PC Card I/O Mode)Chip Select[CS0#, CS1#] (IDE ATA Interface)In IDE ATA Interface, CS0 is used to select the Command Block Registers. CS1 is used to select the Control Block Registers.Output Enable[OE#] (PC Card Memory Mode)I9OE# is used to gate Attribute and Common MemoryRead data from the ATA Card.Output Enable[OE#] (PC Card I/O Mode)OE# is used to gate Attribute Memory Read data from the ATA Card.ATA SEL#(IDE ATA Interface)To enable IDE ATA Interface, this input should be grounded by the host.Write Enable[WE#] (PC Card Memory Mode)I15WE# is used for strobing Attribute and CommonMemory Write data into the ATA Card.Write Enable[WE#] (PC Card I/O Mode)WE# is used for strobing Attribute Memory Write data into the ATA Card.Write Enable[WE#](IDE ATA Interface)This input should be connected Vcc by the host.I/O Read[IORD#] (PC Card I/O Mode)I44IORD# is used to read data from the Card’s I/Ospace.I/O Read[IORD#] (IDE ATA Interface)I/O Write[IOWR#] (PC Card I/O Mode)I45IOWR# is used to write data to the Card’s I/Ospace.I/O Write[IOWR#] (IDE ATA Interface)Ready[READY](PC Card Memory Mode)O16READY signal is set high when the ATA Card isready to accept a new data transfer operation.IREQ#(PC Card I/O Mode)This signal of low level is indicates that the card is requesting software service to host, and high level indicates that the card is not requesting.INTRQ(IDE ATA Interface)This signal is active high interrupt request to the host.Card Detection[CD1#, CD2#]O36, 67CD1# and CD2# provided for proper detection ofPC Card insertion.Write Protect[WP](PC Card Memory Mode)O33This signal is held low because this card does nothave a write protect switch.IOIS16#(PC Card I/O Mode)This output signal is asserted when the I/O port address is capable of 16-bit access.IOCS16#(IDE ATA Interface)Attribute Memory Select[REG#] (PC Card Memory Mode)I61When this signal is asserted, access is limited toAttribute Memory with OE#/WE# and I/O Space withAttribute Memory Select[REG#](PC Card I/O Mode)IORD#/IOWR#.Attribute Memory Select[REG#] (IDE ATA Interface)This input signal is not used for this mode and should be connected to Vcc by the host.Battery Voltage Detect[BVD2](PC Card Memory Mode)O62This output is driven to a high-level.Audio Digital Waveform[SPKR#] (PC Card I/O Mode)SPKR# is kept negated because this Card does not have digital audio output.DASP#(IDE ATA Interface)I/O This signal is the DISK Active/Slave Present signalin the Master/Slave handshake protocol.Card Reset[RESET] (PC Card Memory Mode)I58By assertion of this signal, all registers of this Cardare cleared. This signal should be kept to High-Z byCard Reset[RESET](PC Card I/O Mode)the host for at least 1ms after Vcc applied.Card Reset[RESET#] (IDE ATA Interface)This input pin is the active low hardware reset from the host.Wait[WAIT#](PC card Memory Mode)O59This signal is asserted to delay completion of thememory or I/O access cycle.Wait[WAIT#](PC card I/O Mode) IORDY(IDE ATA Interface)Input Port Acknowledge[INPACK#] (PC Card I/O Mode)O60This signal is asserted when the Card is selectedand can respond to an I/O Read cycle at theInput Port Acknowledge[INPACK#](IDE ATA Interface)address on the address bus.Battery Voltage Detect[BVD1](PC Card Memory Mode)O63This output is driven to a high-level.STSCHG#(PC Card I/O Mode)This signal is asserted low to alert the host to changes in the status of Configuration Status Register in the Attribute Memory Space.PDIAG#(IDE ATA Interface)I/O This signal is the Pass Diagnostic signal in theMaster/Slave handshake protocol.Voltage Sense[VS1, VS2]O43, 57VS1 is grounded so that the Card CIS can be readat 3.3V and VS2 is N.C.Cable Select[CSEL](PC card Memory Mode)-56This signal is not used for this mode.Cable Select[CSEL](PC card I/O Mode)-Cable Select[CSEL] (IDE ATA Interface)I This signal is used to configure this Card as aMaster or a Slave. When this signal is grounded,this Card is configured as a Master. When thissignal is Open, this Card is configure as a Slave.Vcc-17, 515V or 3.3V power. GND-1, 34, 35, 68Ground.BLOCK DIAGRAMFUNCTION TABLEFunction REG#CE2#CE1#A0OE#WE#IORD#IOWR#D15-D8D7-D0 Attribute Memory Read FunctionStandby X H H X X X X X High-Z High-Z Byte Access L H L L L H H H High-Z Even Byte L H L H L H H H High-Z Invalid Word Access L L L X L H H H Invalid Even Byte Odd Byte L L H X L H H H Invalid High-Z Attribute Memory Write FunctionStandby X H H X X X X X don’t care don’t care Byte Access L H L L H L H H don’t care Even Byte L H L H H L H H don’t care don’t care Word Access L L L X H L H H don’t care Even Byte Odd Byte L L H X H L H H don’t care don’t care Common Memory Read FunctionStandby X H H X X X X X High-Z High-Z Byte Access H H L L L H H H High-Z Even ByteH H L H L H H H High-Z Odd Byte Word Access H L L X L H H H Odd Byte Even Byte Odd Byte H L H X L H H H Odd Byte High-Z Common Memory Write FunctionStandby X H H X X X X X don’t care don’t care Byte Access H H L L H L H H don’t care Even ByteH H L H H L H H don’t care Odd Byte Word Access H L L X H L H H Odd Byte Even Byte Odd Byte H L H X H L H H Odd Byte don’t care I/O Read FunctionStandby X H H X X X X X High-Z High-Z Byte Access L H L L H H L H High-Z Even Byte L H L H H H L H High-Z Odd Byte Word Access L L L X H H L H Odd Byte Even Byte Odd Byte L L H X H H L H Odd Byte High-Z I/O Write FunctionStandby X H H X X X X X don’t care don’t care Byte Access L H L L H H H L don’t care Even Byte L H L H H H H L don’t care Odd Byte Word Access L L L X H H H L Odd Byte Even Byte Odd Byte L L H X H H H L Odd Byte don’t careMemory mapped mode(Index=0)REG#CE2#CE1#A10A9-A4A3A2A1A0RegisterOE#=”L”WE#=“L”1000x000x Data Register(D15-D0)Data Register(D15-D0) 1100x0000Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 1100x0001Error Register(D7-D0)Feature Register(D7-D0) 1010x000x Error Register(D15-D8)Feature Register(D15-D8)1000x001x Sector Count Register(D7-D0)Sector Number Register(D15-D8)Sector Count Register(D7-D0) Sector Number Register(D15-D8)1100x0010Sector Count Register(D7-D0)Sector Count Register(D7-D0) 1100x0011Sector Number Register(D7-D0)Sector Number Register(D7-D0) 1010x001x Sector Number Register(D15-D8)Sector Number Register(D15-D8)1000x010x Cylinder Low Register(D7-D0)Cylinder High Register(D15-D8)Cylinder Low Register(D7-D0) Cylinder High Register(D15-D8)1100x0100Cylinder Low Register(D7-D0)Cylinder Low Register(D7-D0) 1100x0101Cylinder High Register(D7-D0)Cylinder High Register(D7-D0) 1010x010x Cylinder High Register(D15-D8)Cylinder High Register(D15-D8)1000x011x Drive Head Register(D7-D0)Status Register(D15-D8)Drive Head Register(D7-D0) Command Register(D15-D8)1100x0110Drive Head Register(D7-D0)Drive Head Register(D7-D0) 1100x0111Status Register(D7-D0)Command Register(D7-D0) 1010x011x Status Register(D15-D8)Command Register(D15-D8) 1000x100x Data Register(D15-D0)Data Register(D15-D0) 1100x1000Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 1100x1001Data Register[Odd](D7-D0)Data Register[Odd](D7-D0) 1010x100x Data Register[Odd](D15-D8)Data Register[Odd](D15-D8)1000x110x invalid(D7-D0)Error Register(D15-D8)invalid(D7-D0) Feature Register(D15-D8)1100x1100invalid invalid1100x1101Error Register(D7-D0)Feature Register(D7-D0) 1010x110x Error Register(D15-D8)Feature Register(D15-D8)1000x111x Alt. Status Register(D7-D0)Drive Address Register(D15-D8)Device Control Register(D7-D0)invalid1100x1110Alt. Status Register(D7-D0)Device Control Register(D7-D0) 1100x1111Drive Address Register(D7-D0)invalid1010x111x Drive Address Register(D15-D8)invalid1001x x x x x Data Register(D15-D0)Data Register(D15-D0) 1101x x x x0Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 1101x x x x1Data Register[Odd](D7-D0)Data Register[Odd](D7-D0) 1011x x x x x Data Register[Odd](D15-D8)Data Register[Odd](D15-D8)Contiguous I/O Map(Index=1)REG#CE2#CE1#A9-A4A3A2A1A0RegisterIORD#=”L”IOWR#=“L”000x000x Data Register(D15-D0)Data Register(D15-D0) 010x0000Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 010x0001Error Register(D7-D0)Feature Register(D7-D0) 001x000x Error Register(D15-D8)Feature Register(D15-D8)000x0010Sector Count Register(D7-D0)Sector Number Register(D15-D8)Sector Count Register(D7-D0) Sector Number Register(D15-D8)010x0010Sector Count Register(D7-D0)Sector Count Register(D7-D0) 010x0011Sector Number Register(D7-D0)Sector Number Register(D7-D0) 001x001x Sector Number Register(D15-D8)Sector Number Register(D15-D8)000x0100Cylinder Low Register(D7-D0)Cylinder High Register(D15-D8)Cylinder Low Register(D7-D0) Cylinder High Register(D15-D8)010x0100Cylinder Low Register(D7-D0)Cylinder Low Register(D7-D0) 010x0101Cylinder High Register(D7-D0)Cylinder High Register(D7-D0) 001x010x Cylinder High Register(D15-D8)Cylinder High Register(D15-D8)000x0110Drive Head Register(D7-D0)Status Register(D15-D8)Drive Head Register(D7-D0) Command Register(D15-D8)010x0110Drive Head Register(D7-D0)Drive Head Register(D7-D0) 010x0111Status Register(D7-D0)Command Register(D7-D0) 001x011x Status Register(D15-D8)Command Register(D15-D8) 000x100x Data Register(D15-D0)Data Register(D15-D0)010x1000Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 010x1001Data Register[Odd](D7-D0)Data Register[Odd](D7-D0) 001x100x Data Register[Odd](D15-D8)Data Register[Odd](D15-D8)000x1100invalid(D7-D0)Error Register(D15-D8)invalid(D7-D0) Feature Register(D15-D8)010x1100invalid invalid010x1101Error Register(D7-D0)Feature Register(D7-D0) 001x110x Error Register(D15-D8)Feature Register(D15-D8)000x1110Alt. Status Register(D7-D0)Drive Address Register(D15-D8)Device Control Register(D7-D0)invalid010x1110Alt. Status Register(D7-D0)Device Control Register(D7-D0) 010x1111Drive Address Register(D7-D0)invalid001x111x Drive Address Register(D15-D8)invalidPrimary(Secondary) I/O(Index=2, 3)REG#CE2#CE1#A9-A4A3A2A1A0RegisterIORD#=”L”IOWR#=“L”0001Fh(17h)000x Data Register(D15-D0)Data Register(D15-D0) 0101Fh(17h)0000Data Register[Even, Odd](D7-D0)Data Register[Even, Odd](D7-D0) 0101Fh(17h)0001Error Register(D7-D0)Feature Register(D7-D0) 0011Fh(17h)000x Error Register(D15-D8)Feature Register(D15-D8)0001Fh(17h)0010Sector Count Register(D7-D0)Sector Number Register(D15-D8)Sector Count Register(D7-D0) Sector Number Register(D15-D8)0101Fh(17h)0010Sector Count Register(D7-D0)Sector Count Register(D7-D0) 0101Fh(17h)0011Sector Number Register(D7-D0)Sector Number Register(D7-D0) 0011Fh(17h)001x Sector Number Register(D15-D8)Sector Number Register(D15-D8)0001Fh(17h)0100Cylinder Low Register(D7-D0)Cylinder High Register(D15-D8)Cylinder Low Register(D7-D0) Cylinder High Register(D15-D8)0101Fh(17h)0100Cylinder Low Register(D7-D0)Cylinder Low Register(D7-D0) 0101Fh(17h)0101Cylinder High Register(D7-D0)Cylinder High Register(D7-D0) 0011Fh(17h)010x Cylinder High Register(D15-D8)Cylinder High Register(D15-D8)0001Fh(17h)0110Drive Head Register(D7-D0)Status Register(D15-D8)Drive Head Register(D7-D0) Command Register(D15-D8)0101Fh(17h)0110Drive Head Register(D7-D0)Drive Head Register(D7-D0) 0101Fh(17h)0111Status Register(D7-D0)Command Register(D7-D0) 0011Fh(17h)011x Status Register(D15-D8)Command Register(D15-D8)0003Fh(37h)1110Alt. Status Register(D7-D0)Drive Address Register(D15-D8)Device Control Register(D7-D0)invalid0103Fh(37h)1110Alt. Status Register(D7-D0)Device Control Register(D7-D0) 0103Fh(37h)1111Drive Address Register(D7-D0)invalid0013Fh(37h)111x Drive Address Register(D15-D8)invalidIDE ATA InterfaceCS1#CS0#A2-A0RegisterIORD#=”L”IOWR#=“L”100h Data Register(D15-D0)Data Register(D15-D0)101h Error Register(D7-D0)Feature Register(D7-D0)102h Sector Count Register(D7-D0)Sector Count Register(D7-D0)103h Sector Number Register(D7-D0)Sector Number Register(D7-D0)104h Cylinder Low Register(D7-D0)Cylinder Low Register(D7-D0)105h Cylinder High Register(D7-D0)Cylinder High Register(D7-D0)106h Drive Head Register(D7-D0)Drive Head Register(D7-D0)107h Status Register(D7-D0)Command Register(D7-D0)016h Alt. Status Register(D7-D0)Device Control Register(D7-D0)017h Drive Address Register(D7-D0)invalidConfiguration Register Specifications Configuration Option RegisterThis register is used for the configuration of the card configuration status and for the issuing soft reset to the card.D7D6D5D4D3D2D1D0 SRESET LevIREQ IndexName R/W DescriptionSRESET R/W Setting this bit to “1”, places the card in the resetstate. When the host returns this bit to “0”, thefunction shall enter the same unconfigured,reset state as the card does following a power-up and hardware reset.LevIREQ R/W If this bit is set to “0”, card generates pulsemode interrupt. If this bit is set to “1”, cardgenerates level mode interrupts.Index R/W This bits is used for select operation mode of thecard as follows.When Power on, Card Hard Reset and Softreset, this data is “000000” for the purpose ofMemory card interface recognition.Index: 0 -> Memory mapped1 -> Contiguous I/O mapped2 -> Primary I/O mapped3 -> Secondary I/O mapped Configuration and Status RegisterThis register is used for observing the card state.D7D6D5D4D3D2D1D0 Changed SigChg Iois800PwrDwn Intr0Name R/W DescriptionChanged R/O This bit indicates that CREADY bit on the PinReplacement register is set to “1”. WhenChanged bit is set to “1”, STSCHG# pin is held“L” if the SigChg bit is “1” and the card isconfigured for the I/O interface.SigChg R/W This bit is set or reset by the host for enablingand disabling the status changesignal(STSCHG# pin). When the card isconfigured I/O card interface and this bit is setto “1”, STSCHG# pin is controlled by Changedbit. If this bit is set to “0”, STSCHG# pin is kept“H”.Iois8R/W This card is always configured for both 8-bitand 16-bit I/O, so this bit is ignored.PwrDwn R/W When this bit is set to “1”, the card entersPower Down mode. When this bit is reset to“0”, the host is requesting the card to enter theactive mode. RREADY bit on Pin ReplacementRegister becomes BUSY when this bit ischanged. RREADY will not become Ready untilthe power state requested has been entered.This card automatically powers down when it isidle, and powers back up when it receives acommand.Intr R/W This bit represents the internal state of theinterrupt request. This bit state is availablewhether I/O card interface has been configuredor not. This signal remains true until thecondition which caused the interrupt requesthas been serviced. If interrupts are disabled bythe nIEN bit in the Device Control Register, thisbit is a zero.Pin Replacement RegisterThis register is used for providing the signal state of READY signal when the card configured I/O card interface.D7D6D5D4D3D2D1D0 00CREADY011RREADY0Name R/W DescriptionCREADY R/W This bit is set to “1” when the RREADY bitchanges state. This bit may also be written bythe host.RREADY R/W When read, this bit indicates READY pinstates. When written, this bit acts as a maskfor writing the CREADY bit.Socket and Copy RegisterThis register is used for identification of the card from the other cards. Host can read and write this register. This register should be set by host before this card’s Configuration Option register set.D7D6D5D4D3D2D1D0 0Copy Number Socket NumberName R/W DescriptionCopy Number R/W This bit indicates the drive number of thecard for twin card configuration.And the host can select and drive one cardby comparing the number in this field withthe drive number of Drive Head Register.In the way, the host can perform the card’smaster/slave organization.SocketNumberR/W This field indicates to the card that it islocated in the n’th socket.CIS InformationCIS informatoins are defined as follows.Offset Data76543210Description0000h01h CISTPL_DEVICE Common Memory device information 0002h03h TPL_LINK Link to next tupleDevice Type=Dh : Function specific 0004h D9h Device Type WPS Device Speed WPS=1 : No WPSDevice Speed=1 : 250ns0006h01h1x2K2kBytes of address space0008h FFh Marks end of Device Info fields000Ah1Ch CISTPL_DEVICE_OC Other Conditions Device information 000Ch05h TPL_LINK Link to next tuple000Eh02h EXT Reserved Vcc MWAIT EXT=0, Vcc=5.0V, Wait is not used.Device Type=Dh : Function specific 0010h DFh Device Type WPS Device Speed WPS=1 : No WPSDevice Speed=250ns0012h01h1x2K2kbytes of address space0014h FFh Marks end of Other Conditions Device Info0016h1Ch CISTPL_DEVICE_OC Other Conditions Device information 0018h04h TPL_LINK Link to next tuple001Ah02h EXT Reserved Vcc MWAIT EXT=0, Vcc=3.3V, Wait is not used.Device Type=Dh : Function specific 001Ch D9h Device Type WPS Device Speed WPS=1 : No WPSDevice Speed=250ns001Eh01h1x2K2kbytes of address space0020h FFh Marks end of Other Conditions Device Info0022h18h CISTPL_JEDEC_C JEDEC Identifier Tuples0024h02h TPL_LINK Link to next tuple0026h DFh JEDEC identifier for first device info entry.PC Card ATA0028h01h JEDEC identifiers for remaining device info entries.with no Vpp require for any operation 002Ah20h CISTPL_MANFID Manufacturer Identification Tuple 002Ch04h TPL_LINK Link to next tuple002Eh1Ch PC Card manufacturer code001Ch0030h00h0032h01h manufacturer information0001h0034h00h0036h15h CISTPL_VERS_1Level 1 Version / Product Information 0038h26h TPL_LINK Link to next tuple003Ah04h TPLLV1_MAJOR PCMCIA2.0 / JEIDA4.1003Ch01h TPLLV1_MINOR PCMCIA2.0 / JEIDA4.1003Eh4Dh TPLLV1_INFO M0040h49h I0042h54h T0044h53h S0046h55h U0048h42h B004Ah49h I004Ch53h S004Eh48h H0050h49h I0052h20h0054h41h A0056h54h T0058h41h A005Ah20h005Ch43h C005Eh41h A0060h52h R0062h44h D0064h00h0066h4Dh M0068h46h F006Ah30h0006Ch78h x006Eh78h x0070h78h x0072h78h x0074h2Dh-0076h30h00078h33h3007Ah41h A007Ch54h T007Eh58h x0080h78h x0082h000084h FFh Marks end of chain.0086h21h CISTPL_FUNCID Function Identification Tuple0088h02h TPL_LINK Link to next tuple008Ah04h Card Function Code PC Card ATA(Fixed Disk)008Ch01h Reserved ROM POST ROM=0 : No BIOS ROMPOST=1: Configure card at power on 008Eh22h CISTPL_FUNCE Function Extension Tuple0090h02h TPL_LINK Link to next tuple0092h01h Disk Function Extension Tuple Type Disk Interface Type0094h01h Disk Interface Type PC Card ATA Interface0096h22h CISTPL_FUNCE Function Extension Tuple0098h03h TPL_LINK Link to next tuple009Ah02h Disk Function Extension Tuple Type Basic PC Card ATA Interface tuple 009Ch04h RFU D U S V V=0 : No Vpp RequiredS=1 : SiliconU=0 : ID Drive Mfg/SN not UniqueD=0 : Single Drive on Card009Eh0Fh RFU I E N P3P2P1P0P0=1 : Sleep Mode SupportedP1=1 : Standby Mode SupportedP2=1 : Idle Mode SupportedP3=1 : Drive Auto Power ControlN=0 : No Configs exclude I/O port3F7H/377HE=0 : Index bit is not emulatedI=0 : IOIS16# use is Unspecified onTwin Card Configurations00A0h1Ah CISTPL_CONF Configuration Tuple00A2h05h TPL_LINK Link to next tuple00A4h01h RFS RMS RAS RFS=0 : No Reserved FieldRMS=0 : 1 Byte Register MaskRAS=1 : 2 Byte Config Base Address 00A6h03h TPCC_LAST Last Index = 300A8h00h TPCC_RADR (lsb)Configuration Registers are located 00AAh02h TPCC_RADR (msb)at 200H in Reg Space00ACh0Fh RFU RFU RFU E S P C I First 4 Configuration Registers present 00AEh1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple00B0h08h TPL_LINK Link to next tuple00B2h C0h I D Configuration Index Interface Byte Follows, Default Entry,Configuration Index = 000B4h40h W R P B Interface Type Mem Interface; Bvd's and wProt notused; Ready active and Wait not usedfor memory cycles.00B6h A1h M MS IR IO T P Has Vcc, Mem Space and Misc Info 00B8h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows00BAh55h X Mantissa Exponent Vcc Nominal is 5 Volts00BCh08h Length in 256 bytes pages (lsb)Length of Mem Space is 2 KB00BEh00h Length in 256 bytes pages (msb)Starts at 0 on card00C0h21h X RFU P RO A T Power Down, Twin Card supported. 00C2h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple00C4h05h TPL_LINK Link to next tuple00C6h00h I D Configuration Index No Interface Byte, Non Default Entry,Configuration Index = 000C8h01h M MS IR IO T P Has Vcc Info00CAh01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows00CCh B5h X Mantissa Exponent Vcc Nominal is 3.3 Volts00CEh1Eh Extension00D0h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple00D2h0Ah TPL_LINK Link to next tuple00D4h C1h I D Configuration Index Interface Byte Follows, Default Entry,Configuration Index = 100D6h41h W R P B Interface Type I/O Interface; Bvd's and wProt notused; Ready active and Wait not usedfor memory cycles.00D8h99h M MS IR IO T P Has Vcc, I/O, IRQ and Misc Info00DAh01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows00DCh55h X Mantissa Exponent Vcc Nominal is 5 Volts00DEh64h R S E IO AddrLines I/O : Range=0, Bus16=1, Bus8=1,IO AddrLines=400E0h F0h S P L M Level or Mask Share=1, Pulse=1, Level=1, Mask=1 00E2h FFh IRQ7IRQ6IRQ5IRQ4IRQ3IRQ2IRQ1IRQ0IRQ Level to be routed 0 - 1500E4h FFh IRQ15IRQ14IRQ13IRQ12IRQ11IRQ10IRQ9IRQ8recommended.00E6h21h X RFU P RO A T Power Down, Twin Card supported. 00E8h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple00EAh05h TPL_LINK Link to next tuple00ECh01h I D Configuration Index No Interface Byte, Non Default Entry,Configuration Index = 100EEh01h M MS IR IO T P Has Vcc Info00F0h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows00F2h B5h X Mantissa Exponent Vcc Nominal is 3.3 Volts00F4h1Eh Extension00F6h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple00F8h0Fh TPL_LINK Link to next tuple00FAh C2h I D Configuration Index Interface Byte Follows, Default Entry,Configuration Index = 200FCh41h W R P B Interface Type I/O Interface; Bvd's and wProt notused; Ready active and Wait not usedfor memory cycles.00FEh99h M MS IR IO T P Has Vcc, I/O, IRQ and Misc Info 0100h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows0102h55h X Mantissa Exponent Vcc Nominal is 5 Volts0104h EAh R S E IO AddrLines I/O : Range=1, Bus16=1, Bus8=1,IO AddrLines=100106h61h LS AS N Ranges Number of Address Ranges = 2Address Size = 2Length Size = 10108h F0h First I/O Base Address (LSB)First I/O Base Address = 1F0h010Ah01h First I/O Base Address (MSB)010Ch07h First I/O Length minus 1First I/O Range is 8 Byte Length010Eh F6h Second I/O Base Address (LSB)Second I/O Base Address = 3F6h 0110h03h Second I/O Base Address (MSB)0112h01h Second I/O Length minus 1Second I/O Range is 2 Byte Length 0114h EEh S P L M IRQ Level Share=1, Pulse=1, Level=1, Mask=0,IRQ14 is recommended.0116h21h X RFU P RO A T Power Down, Twin Card supported. 0118h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple011Ah05h TPL_LINK Link to next tuple011Ch02h I D Configuration Index No Interface Byte, Non Default Entry,Configuration Index = 2011Eh01h M MS IR IO T P Has Vcc Info0120h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows0122h B5h X Mantissa Exponent Vcc Nominal is 3.3 Volts0124h1Eh Extension0126h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple0128h0Fh TPL_LINK Link to next tuple012Ah C3h I D Configuration Index Interface Byte Follows, Default Entry,Configuration Index = 3012Ch41h W R P B Interface Type I/O Interface; Bvd's and wProt notused; Ready active and Wait not usedfor memory cycles.012Eh99h M MS IR IO T P Has Vcc, I/O, IRQ and Misc Info 0130h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows0132h55h X Mantissa Exponent Vcc Nominal is 5 Volts0134h EAh R S E IO AddrLines I/O : Range=1, Bus16=1, Bus8=1,IO AddrLines=100136h61h LS AS N Ranges Number of Address Ranges = 2Address Size = 2Length Size = 10138h70h First I/O Base Address (LSB)First I/O Base Address = 170h013Ah01h First I/O Base Address (MSB)013Ch07h First I/O Length minus 1First I/O Range is 8 Byte Length013Eh76h Second I/O Base Address (LSB)Second I/O Base Address = 376h 0140h03h Second I/O Base Address (MSB)0142h01h Second I/O Length minus 1Second I/O Range is 2 Byte Length 0144h EEh S P L M IRQ Level Share=1, Pulse=1, Level=1, Mask=0,IRQ14 is recommended.0146h21h X RFU P RO A T Power Down, Twin Card supported. 0148h1Bh CISTPL_CFTABLE_ENTRY Configuration Table Entry Tuple014Ah05h TPL_LINK Link to next tuple014Ch03h I D Configuration Index No Interface Byte, Non Default Entry,Configuration Index = 3014Eh01h M MS IR IO T P Has Vcc Info0150h01h R DI PI AI SI HV LV NV Nominal Voltage Only Follows0152h B5h X Mantissa Exponent Vcc Nominal is 3.3 Volts0154h1Eh Extension0156h FFh CISTPL_END End of List Tuple。
MBRS540T3中文资料
MBRS540T3Preferred DeviceSurface Mount Schottky Power RectifierThe MBRS540T3employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.Features•Pb−Free Package is Available•Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for Automated Handling •Highly Stable Oxide Passivated Junction•Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guardring for Stress ProtectionMechanical Characteristics•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 @ 0.125 in •Weight: 217 mg (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Polarity: Notch in Plastic Body Indicates Cathode Lead •ESD Rating: Machine Model, C (> 400 V)Human Body Model, 3B (> 8000 V)•Device Meets MSL 1 RequirementsMAXIMUM RATINGSMaximum ratings applied to the device are individual stress limit values (not nor-mal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.Device Package Shipping †ORDERING INFORMATIONSMC CASE 403PLASTICMBRS540T3SMC 2500/T ape & Reel SCHOTTKY BARRIERRECTIFIER 5.0 AMPERES 40 VOLTSPreferred devices are recommended choices for future use and best overall value.MARKING DIAGRAMYWW B540†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.B540= Specific Device Code Y = YearW= Work WeekMBRS540T3GSMC (Pb−Free)2500/T ape & ReelTHERMAL CHARACTERISTICSELECTRICAL CHARACTERISTICS2.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2.0%.TYPICAL CHARACTERISTICSFigure 1. Typical Forward VoltageFigure 2. Maximum Forward VoltageFigure 3. Typical Reverse Current Figure 4. Maximum Reverse Current1010.1V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)100E−3100E−6I R , R E V E R S E C U R R E N T (A M P S )100E−9100E−121010.1V F , MAXIMUM INSTANTANEOUS FORWARDVOLTAGE (VOLTS)I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)I R )TYPICAL CHARACTERISTICSI O , A V E R A G E F O R W A R D C U R R E N T (A M P S ))Figure 7. CapacitanceFigure 8. Typical Operating TemperatureDeratingV R , REVERSE VOLTAGE (VOLTS)1001000C , C A P A C I T A N C E (p F )V R , DC REVERSE VOLTAGE (VOLTS)T J , Dt, TIME (s)Figure 10. Thermal Response − MBRS540T3 on 1” padr (t ), T R A N S I E N T T H E R M A L R E S P O N S E (C /W )0.000010.00010.0010.01110010000.110r (t ), T R A N S I E N T T H E R M A L R E S P O N S E (C /W )PACKAGE DIMENSIONSDIM MIN MAX MIN MAX MILLIMETERSINCHESA 0.2600.280 6.607.11B 0.2200.240 5.59 6.10C 0.0750.095 1.90 2.41D 0.1150.121 2.92 3.07H 0.00200.00600.0510.152J 0.0060.0120.150.30K 0.0300.0500.76 1.27P 0.020 REF 0.51 REF S 0.3050.3207.758.13NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.4.403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.SMCCASE 403−03ISSUE D2.7940.110ǒmm ǓSCALE 4:1SOLDERING FOOTPRINT**For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
MRF101BN和MRF101AN RF 设备数据手册说明书
MRF101BN MRF101ANMRF101AN MRF101BN1RF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese devices are designed for use in VHF/UHF communications,VHF TV broadcast and aerospaceapplications as well as industrial,scientific and medical applications.The devices are exceptionally rugged and exhibit high performance up to 250MHz.Typical Performance:V DD =50VdcFrequency (MHz)Signal TypeP out (W)G ps (dB)ηD (%)13.56CW 130CW 27.179.627CW 130CW 24.081.540.68(1)CW 120CW 23.881.550CW 115CW 23.079.581.36CW 130CW 23.280.887.5–108CW 110CW 21.377.1136–174(2,3)CW104CW 21.276.5230(4)Pulse(100μsec,20%Duty Cycle)115Peak21.176.7Load Mismatch/RuggednessFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage Result 40.68CW>65:1at all Phase Angles 0.64Peak (3dB Overdrive)50No Device Degradation 230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device Degradation1.Measured in 40.68MHz reference circuit (page 5).2.Measured in 136–174MHz VHF broadband reference circuit (page3.The values shown are the center band performance numbers across the indicated frequency range.4.Measured in 230MHz fixture (page 13).Features ∙Mirror pinout versions (A and B)to simplify use in a push--pull,two--up configuration∙Characterized from 30to 50V ∙Suitable for linear application∙Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation∙Included in NXP product longevity program with assured supply for a minimum of 15years after launchTypical Applications∙Industrial,scientific,medical (ISM)–Laser generation –Plasma etching –Particle accelerators–MRI and other medical applications–Industrial heating,welding and drying systems∙Radio and VHF TV broadcast ∙HF and VHF communications ∙Switch mode power supplies Document Number:MRF101ANRev.0,11/2018Technical Data1.8–250MHz,100W CW,50VWIDEBANDRF POWER LDMOS TRANSISTORSMRF101AN MRF101BNTO--220--3LMRF101BNTO--220--3LMRF101ANGSDDS GNote:Exposed backside of the packageand tab also serves as a source terminal for the transistor.BacksideSS2RF Device Data NXP SemiconductorsMRF101AN MRF101BN Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS –0.5,+133Vdc Gate--Source Voltage V GS –6.0,+10Vdc Operating VoltageV DD 50Vdc Storage Temperature Range T stg –65to +150︒C Case Operating Temperature Range T C –40to +150︒C Operating Junction Temperature Range (1,2)T J –40to +175︒C Total Device Dissipation @T C =25︒C Derate above 25︒CP D1820.91W W/︒CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCW:Case Temperature 77︒C,150W CW,50Vdc,I DQ =100mA,40.68MHz R θJC 1.1︒C/W Thermal Impedance,Junction to CasePulse:Case Temperature 73︒C,113W Peak,100μsec Pulse Width,20%Duty Cycle,50Vdc,I DQ =100mA,230MHzZ θJC0.37︒C/WTable 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JS--001--2017)1B,passes 1000V Charge Device Model (per JS--002--2014)C3,passes 1200VTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsGate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——1μAdc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mAdc)V (BR)DSS 133——Vdc Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc)I DSS——10μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =290μAdc)V GS(th) 1.7 2.2 2.7Vdc Gate Quiescent Voltage(V DS =50Vdc,I D =100mAdc)V GS(Q)— 2.5—Vdc Drain--Source On--Voltage (V GS =10Vdc,I D =1Adc)V DS(on)—0.45—Vdc Forward Transconductance (V DS =10Vdc,I D =8.8Adc)g fs—7.1—S1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /RF/calculators .3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /RF and search for AN1955.(continued)MRF101AN MRF101BN3RF Device DataNXP SemiconductorsTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)(continued)CharacteristicSymbolMinTypMaxUnitDynamic CharacteristicsReverse Transfer Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss —0.96—pF Output Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —43.4—pF Input Capacitance(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)C iss—149—pFTypical Performance —230MHz (In NXP 230MHz Fixture,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.9W,f =230MHz,100μsec Pulse Width,20%Duty Cycle Common--Source Amplifier Output Power P out —115—W Power Gain G ps —21.1—dB Drain EfficiencyηD—76.7—%Table 5.Load Mismatch/Ruggedness (In NXP 230MHz Fixture,50ohm system)I DQ =100mAFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage,V DDResult230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device DegradationTable 6.Ordering InformationDeviceShipping InformationPackageMRF101AN MPQ =250devices (50devices per tube,5tubes per box)TO--220--3L (Pin 1:Gate,Pin 2:Source,Pin 3:Drain)MRF101BNTO--220--3L (Pin 1:Drain,Pin 2:Source,Pin 3:Gate)4RF Device Data NXP SemiconductorsMRF101AN MRF101BNTYPICAL CHARACTERISTICS1100V DS,DRAIN--SOURCE VOLTAGE(VOLTS)Figure1.Capacitance versus Drain--Source Voltage C,CAPACITANCE(pF)1010000.1MRF101AN MRF101BN5RF Device DataNXP Semiconductors40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 7.40.68MHz Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.50W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)40.6812023.881.56RF Device Data NXP SemiconductorsMRF101AN MRF101BN 40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Figure 2.MRF101AN Compact Reference Circuit Component Layout and Assembly Example —40.68MHzFigure 3.MRF101AN Compact Reference CircuitBoardaaa--032274Table 8.MRF101AN Compact Reference Circuit Component Designations and Values —40.68MHzPartDescriptionPart NumberManufacturer B1Short RF Bead 2743019447Fair-Rite C1,C582pF Chip Capacitor GQM2195C2E820GB12D Murata C2,C4200pF Chip Capacitor GQM2195C2A201GB12D Murata C333pF Chip Capacitor GQM2195C2E330GB12D Murata C6,C7,C8,C9,C101000pF Chip Capacitor GRM2165C2A102JA01D Murata C111μF Chip Capacitor GJ821BR71H105KA12L Murata C12,C1310nF Chip Capacitor GRM21BR72A103KA01B Murata C141μF Chip Capacitor C3216X7R2A105K160AA TDK L1150nH Chip Inductor 0805WL151JT ATC L217.5nH,4Turn Inductor GA3095-ACL Coilcraft L3160nH Square Air Core Inductor 2222SQ-161JEC Coilcraft L4110nH Square Air Core Inductor 2222SQ-111JEB Coilcraft Q1RF Power LDMOS Transistor MRF101ANNXP R175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA Speer PCBFR40.09",εr =4.8,2oz.CopperD113958MTLMRF101AN MRF101BN7RF Device DataNXP SemiconductorsTYPICAL CHARACTERISTICS —40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)V GS ,GATE--SOURCE VOLTAGE (VOLTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40 3.52.51.51100120014020Figure 4.CW Output Power versus Gate--SourceVoltage at a Constant Input PowerP in ,INPUT POWER (WATTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40010012001402040.68101121f (MHz)P1dB (W)P3dB (W)Figure 5.CW Output Power versus Input PowerP out ,OUTPUT POWER (WATTS)Figure 6.Power Gain and Drain Efficiencyversus CW Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)25242802090705030302223262729806040201004060801001201400.5230.10.20.30.40.50.60.721201008RF Device Data NXP SemiconductorsMRF101AN MRF101BN40.68MHz COMPACT REFERENCE CIRCUIT(MRF101AN)fMHzZ sourceΩZ loadΩ40.6824.0+j12.614.2–j2.5Z source=Testcircuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measuredfromdrain toground.Figure7.Series Equivalent Source and Load Impedance—40.68MHzZ source Z load50Ω50ΩMRF101AN MRF101BN9RF Device DataNXP Semiconductors136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 9.136–174MHz VHF Broadband Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.79W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)13511721.780.015510421.276.517510721.375.4136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)—0.7"⨯2.0"(1.8cm⨯5.0cm)Figure8.MRF101AN Compact Reference Circuit Component Layout and Assembly Example—136–174MHzFigure9.MRF101AN Compact Reference Circuit BoardTable10.MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values—136–174MHz Part Description Part Number ManufacturerB1Short RF Bead2743019447Fair-RiteC139pF Chip Capacitor GQM2195C2E390GB12D MurataC2,C5,C6,C7,C8,C12510pF Chip Capacitor GRM2165C2A511JA01D MurataC368pF Chip Capacitor GQM2195C2E680GB12D MurataC427pF Chip Capacitor GQM2195C2E270GB12D MurataC910pF Chip Capacitor GQM2195C2E100FB12D MurataC111μF Chip Capacitor GJ821BR71H105KA12L MurataC1310nF Chip Capacitor GRM21BR72A103KA01B MurataC141μF Chip Capacitor C3216X7R2A105K160AA TDKL122nH Chip Inductor0805WL220JT ATCL212nH Chip Inductor0805WL120JT ATCL3,L4,L668nH Air Core Inductor1812SMS-68NJLC CoilcraftL512nH,3Turn Inductor GA3094-ALC CoilcraftQ1RF Power LDMOS Transistor MRF101AN NXPR175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA SpeerPCB FR40.09",εr=4.8,2oz.Copper D113958MTLTYPICAL CHARACTERISTICS —136–174MHzCOMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)20150f,FREQUENCY (MHz)26259085807565130120ηD ,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )242322211715516016517070110P o u t ,O U T P U T P O W E R (W A T T S )14514017513519100180P in,INPUT POWER (WATTS)0P o u t ,O U T P U T P O W E R (W A T T S )806040200.40.61201000.20.8140 1.027202422807570G p s ,P O W E R G A I N (d B )20406026858025232110012014065605550ηD ,D R A I N E F F I C I E N C Y (%)Figure 10.Power Gain,Drain Efficiency and CW Output Power versus Frequency at a Constant Input PowerFigure 11.CW Output Power versus Input Power and FrequencyP out ,OUTPUT POWER (WATTS)Figure 12.Power Gain and Drain Efficiency versusCW Output Power and Frequency191817454035136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)f MHz Z sourceΩZ loadΩ135 6.8+j10.29.5+j5.2145 6.2+j10.29.9+j5.9155 5.3+j10.810.2+j6.2165 4.4+j11.910.0+j5.9175 3.9+j13.48.8+j5.0Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Figure13.Series Equivalent Source and Load Impedance—136–174MHzZ source Z load50Ω50Ω230MHz FIXTURE(MRF101AN)—4.0"⨯5.0"(10.2cm⨯12.7cm)aaa--031939Figure14.MRF101AN Fixture Component Layout—230MHzTable11.MRF101AN Fixture Component Designations and Values—230MHzPart Description Part Number Manufacturer B1Long Ferrite Bead2743021447Fair-RiteC1,C2,C1018pF Chip Capacitor ATC100B180JT500XT ATCC343pF Chip Capacitor ATC100B430JT500XT ATCC4,C131000pF Chip Capacitor ATC800B102JT50XT ATCC50.1μF Chip Capacitor GRM319R72A104KA01D MurataC610nF Chip Capacitor C1210C103J5GACTU KemetC7 2.2μF Chip Capacitor C3225X7R1H225K TDKC847μF,16V Tantalum Capacitor T491D476K016AT KemetC951pF Chip Capacitor ATC100B510JT500XT ATCC1116pF Chip Capacitor ATC100B160JT500XT ATCC12470pF Chip Capacitor ATC800B471JW50XT ATCC140.1μF Chip Capacitor C1812104K1RACTU KemetC15 2.2μF Chip Capacitor C3225X7R2A225K TDKC16 2.2μF Chip Capacitor HMK432B7225KM-T Taiyo YudenC17220μF,100V Electrolytic Capacitor MCGPR100V227M16X26MulticompL139nH Chip Inductor1812SMS-39NJLC CoilcraftL246nH Chip Inductor1010VS-46NME CoilcraftL317.5nH,4Turn Inductor GA3095-ALC CoilcraftR1470Ω,1/4W Chip Resistor CRCW1206470RFKEA VishayPCB Rogers AD255C,0.030",εr=2.55,2oz.Copper D113651MTLTYPICAL CHARACTERISTICS —230MHz FIXTURE,T C =25_C (MRF101AN)0V GS ,GATE--SOURCE VOLTAGE (VOLTS)Figure 15.Output Power versus Gate--SourceVoltage at a Constant Input PowerP o u t ,O U T P U T P O W E R (W A T T S )P E A K755025 1.52 2.531251000.51P in ,INPUT POWER (dBm)PEAK 514943P o u t ,O U T P U T P O W E R (d B m )P E A K4733302127245318230110128f (MHz)P1dB (W)P3dB (W)Figure 16.Output Power versus Input PowerP out ,OUTPUT POWER(WATTS)PEAKFigure 17.Power Gain and Drain Efficiency versus Output Power and Quiescent CurrentG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)3300806040203301080706050403020P out ,OUTPUT POWER (WATTS)PEAKFigure 18.Power Gain and Drain Efficiencyversus Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)0P out ,OUTPUT POWER (WATTS)PEAKFigure 19.Power Gain versus Output Powerand Drain--Source Voltage20G p s ,P O W E R G A I N (d B )16145075100182522150451001251503003002441393715230MHz FIXTURE (MRF101AN)f MHz Z sourceΩZ load Ω2302.1+j5.95.5+j3.2Z source =Test circuitimpedance as measured fromgate to ground.Z load=Test circuit impedance asmeasured from drain toground.Figure 20.Series Equivalent Source and Load Impedance —230MHzZ source Z load50Ω50ΩPACKAGE DIMENSIONSPRODUCT DOCUMENTATION,SOFTWARE AND TOOLS Refer to the following resources to aid your design process.Application Notes∙AN1955:Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins∙EB212:Using Data Sheet Impedances for RF LDMOS DevicesSoftware∙Electromigration MTTF Calculator∙RF High Power Model∙.s2p FileDevelopment Tools∙Printed Circuit BoardsTo Download Resources Specific to a Given Part Number:1.Go to /RF2.Search by part number3.Click part number link4.Choose the desired resource from the drop down menuREVISION HISTORYThe following table summarizes revisions to this document.Revision Date Description 0Nov.2018∙Initial release of data sheetRF Device DataNXP Semiconductors How to Reach Us:Home Page: Web Support:/support Information in this document is provided solely to enable system and software implementers to use NXP products.There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.NXP reserves the right to make changes without further notice to any products herein.NXP makes no warranty,representation,or guarantee regarding the suitability of its products for any particular purpose,nor does NXP assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation consequential or incidental damages.“Typical”parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications,and actual performance may vary over time.All operating parameters,including “typicals,”must be validated for each customer application by customer’s technical experts.NXP does not convey any license under its patent rights nor the rights of others.NXP sells products pursuant to standard terms and conditions of sale,which can be found at the following address:/SalesTermsandConditions .NXP and the NXP logo are trademarks of NXP B.V.All other product or service names are the property of their respective owners.E 2018NXP B.V.MRF101BN MRF101AN。
MBR6060PT中文资料
500
400 300
45
30
200
15
100
0 0 50 CASE TEMPERATURE. ( C)
o
100
150
0 1
10 NUMBER OF CYCLES AT 60Hz
100
FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG
FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method
AVERAGE FORWARD CURRENT. (A)
- 900S AND CHARACTERISTIC CURVES (MBR6050PT THRU MBR60100PT)
FIG.1- FORWARD CURRENT DERATING CURVE
75 600 RESISTIVE OR INDUCTIVE LOAD 60
Maximum Average Forward Rectified Current at Tc=125OC Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=120oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) IF=30A, Tc=25OC IF=30A, Tc=125OC Maximum Instantaneous Reverse Current @Tc=25+ at Rated DC Blocking Voltage Per Leg @ Tc=125+ (Note 1) Voltage Rate of Change at (Rated VR) Typical Thermal Resistance Per Leg (Note 3) Operating Junction Temperature Range Storage Temperature Range
MBRM560资料
Note:Pins 1 & 2 must be electricallyconnected at the printed circuit board.MBRM5605A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERPOWERMITE â3FeaturesSingle phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.·Case: POWERMITE â3, Molded Plastic ·Terminals: Solderable per MIL-STD-202,Method 208·Polarity: See Diagram ·Marking: See Sheet 3·Weight: 0.072 grams (approx.)Mechanical DataPIN 1PIN 2PIN 3,BOTTOMSIDE HEAT SINK·Guard Ring Die Construction for Transient Protection·Low Power Loss, High Efficiency ·Low Reverse Current·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications·Plastic Material: UL Flammability Classification Rating 94V-0N E W P R O D U C TMaximum Ratings@ T A = 25°C unless otherwise specifiedElectrical Characteristics@ T A = 25°C unless otherwise specifiedNotes: 1. Short duration test pulse used to minimize self-heating effect.0.010.1101.0I ,I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )F V ,INSTANTANEOUS F0RWARD VOLTAGE (V)Fig.1Typical Forward CharacteristicsF 10000.20.40.60.80102060I ,I N S T A N T A N E O U S R E V E R S E C U R R E N T (A )R m V ,INSTANTANEOUS REVERSE VOLTAGE (V)Fig.2Typical Reverse CharacteristicsR 10001010,000N E W P R O D U C T110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBEROF CYCLES AT 60HzFig.3Max Non-Repetitive Peak Fwd Surge Current2040608010010100100015453060C ,T O T A L C A P A C I T A N C E (p F )T V ,REVERSE VOLTAGE (V)Fig.4Typical Capacitance vs.Reverse VoltageRN E W P R O D U C TMBRM560=Product type marking code=Manufacturers’code marking YYWW =Date code markingYY =Last digit of year ex:2for 2002WW =Week code 01to 52YYWWMBRM560Ordering InformationNotes:4.For Packaging Details, go to our website at /datasheets/ap02007.pdf.Marking Information(Note 4)01.53.04.57.56.0255075100125150I ,D C F O R W A R D C U R R E N T (A )F T,AMBIENT TEMPERATURE (°C)Fig.5DC Forward Current DeratingA 00.51.01.52.52.03.03.501324567P ,A V E R A G E F O R W A R D P O W E R D I S S I P A T I O N (W )F (A V )I ,AVERAGE FORWARD CURRENT (A)Fig.6Forward Power Dissipation F(AV)Notes:1. T A = T SOLDERING POINT , R q JS =2.7°C/W, R q SA = 0°C/W.2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R q JA in range of 20-40°C/W.3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at /datasheets/ap02001.pdf. R q JA in range of 100-130°C/W.POWERMITE is a registered trademark of Microsemi Corporation.。
MFR5-4K7GC中文资料
zero at 155°C 0.25 0.25 1 0.5 55/125/56 1 0.5 0.25 0.25 0.25 0.25 0.25 0.1 Not Specified 0.1 >1G >1G 400 min 500 min Data available upon request
Graph 2 – Load for 1000 hours at 70°C: maximum changes
Approved CECC 40101 - 803 Style Power rating at 70°C watts Resistance range. ohms Limiting element voltage volts TCR ppm/°C Resistance tolerance % Standard values Thermal impedance Ambient temperature range Product grades available
Data available upon request
© Welwyn Components Limited · Bedlington, Northumberland NE22 7AA, UK
Telephone: +44 (0) 1670 822181 · Facsimile: +44 (0) 1670 829465 · Email: info@ · Website:
© Welwyn Components Limited Bedlington, Northumberland NE22 7AA, UK Telephone: +44 (0) 1670 822181 · Facsimile: +44 (0) 1670 829465 · Email: info@ · Website: 136
MBR1545CT中文资料
Tj = 25°C f = 1 MHZ VSIG = 50mV p–p
1000
100 0.1
15344
1.0
10
100
VR – Reverse Voltage ( V )
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
Rev. A2, 24-Jun-98
15343
10
Tj = 150°C
1.0
Tj = 125°C
0.1
0.01
Tj = 75°C Tj = 25°C
10 Number of Cycles at 60 Hz
100
15345
0.001 0
20
40
60
80
100 120 140
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
4000 C D – Diode Capacitance ( pF )
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
3 (5)
元器件交易网
MBR1530CT–MBR1560CT
Vishay Lite–On Power Semiconductor Dimensions in mm
14468
Case: molded plastic Polarity: as marked on body Approx. weight: 2.24 grams Mounting position: any Marking: type number
MRF9060
REV 0
MOTOROLA RF Motorola, Inc. 2001 REFERENCE DESIGN DATA
MRF9060 MRF9060S MRF9060SR1 1
R3 T2 VGG T1 R2 + C7 + C5 R1
R5 + C1 C2 C3 Z7 Z10 C10 + C11
B1
VDD
Gps
700 mA
VDS = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz 100
869
873
877
881
885
889
893
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
Figure 4. Intermodulation Distortion versus Output Power
-31 -36 -41 -46 -51 -56 Offset = 100 kHz 1 500 kHz 100 VDS = 26 Vdc IDQ = 600 mA f1 = 880 MHz f2 = f1 + OFFSET 10000 kHz
η
16 15.5 15 14.5
Gps
32 22
h , DRAIN EFFICIENCY (%)
12 2 85
10 Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain, Efficiency versus Output Power
Figure 6. Intermodulation Distortion versus Output Power
5082-5608-I0000中文资料
14.2 mm (0.56 inch)Seven Segment Displays Technical DataFeatures• Industry Standard Size • Industry Standard Pinout 15.24 mm (0.6 in.) DIP Leads on 2.54 mm (0.1 in.) Centers • Choice of ColorsAlGaAs Red, High Efficiency Red, Yellow, Green, Orange • Excellent Appearance Evenly Lighted Segments Mitered Corners on Segments Gray Package Gives Optimum Contrast±50° Viewing Angle • Design FlexibilityCommon Anode or Common CathodeSingle and Dual Digits Right Hand Decimal Point ±1. Overflow Character• Categorized for Luminous IntensityYellow and Green Categorized for ColorUse of Like Categories Yields a Uniform Display • High Light Output • High Peak Current• Excellent for Long Digit String Multiplexing • Intensity and Color Selection OptionSee Intensity and ColorSelected Displays Data Sheet • Sunlight Viewable AlGaAsDescriptionThe 14.2 mm (0.56 inch) LED seven segment displays aredesigned for viewing distances upto 7 metres (23 feet). Thesedevices use an industry standard size package and pinout. Both the numeric and ±1 overflow devices feature a right hand decimalpoint. All devices are available as either common anode or common cathode.Orange AlGaAs Red HERYellowGreen Package HDSP-HDSP-[1]HDSP-[1]HDSP-HDSP- DescriptionDrawingH401H151550157015601Common Anode Right Hand Decimal A H403H153550357035603Common Cathode Right Hand Decimal B H157550757075607Common Anode ±1. Overflow C H158550857085608Common Cathode ±1. OverflowD K401552157215621Two Digit Common Anode Right Hand DecimalE K403552357235623Two Digit Common Cathode Right Hand DecimalFDevicesNote:1. These displays are recommended for high ambient light operation. Please refer to the HDSP-H10X/K12X AlGaAs and HDSP-555X HER data sheet for low current operation.HDSP-K40x Series HDSP-550x Series HDSP-552x Series HDSP-560x Series HDSP-562x Series HDSP-570x Series HDSP-572x Series HDSP-H15x Series HDSP-H40x SeriesThese displays are ideal for most applications. Pin for pin equivalent displays are alsoavailable in a low current design.The low current displays are idealfor portable applications. For additional information see the Low Current Seven Segment Displays data sheet.Part Numbering SystemNotes:1. For codes not listed in the figure above, please refer to the respective datasheet or contact your nearest Agilent representative for details.2. Bin options refer to shippable bins for a part number. Color and Intensity Bins are typically restricted to 1bin per tube (exceptions may apply). Please refer to respective datasheet for specific bin limit information.5082 -X X X X-X X X X X HDSP-X X X X-X X X X XMechanical Options [1]00: No Mechanical Option Color Bin Options [1,2]0: No Color Bin LimitationMaximum Intensity Bin [1,2]0: No Maximum Intensity Bin Limitation Minimum Intensity Bin [1,2]0: No Minimum Intensity Bin Limitation Device Configuration/Color [1]1: Common Anode 3: Common CathodeDevice Specific Configuration [1]Refer to Respective DatasheetPackage [1]H: 14.2 mm (0.56 inch) Single Digit Seven Segment DisplayFUNCTIONPIN AB CDEF1CATHODE e ANODE e CATHODE c ANODE cE CATHODE NO. 1 E ANODE NO. 12CATHODE d ANODE d ANODE c, d CATHODE c, d D CATHODE NO. 1 D ANODE NO. 13ANODE [3]CATHODE [4]CATHODE b ANODE bC CATHODE NO. 1 C ANODE NO. 14CATHODE c ANODE c ANODE a, b, DP CATHODE a, b, DP DP CATHODE NO. 1DP ANODE NO. 15CATHODE DP ANODE DP CATHOPDE DP ANODE DE E CATHODE NO. 1 E ANODE NO. 26CATHODE b ANODE b CATHODE a ANODE aD CATHODE NO. 2 D ANODE NO. 27CATHODE a ANODE a ANODE a, b, DP CATHODE a, b, DP G CATHODE NO. 2G ANODE NO. 28ANODE [3]CATHODE [4]ANODE c, d CATHODE c, d C CATHODE NO. 2 C ANODE NO. 29CATHODE f ANODE f CATHODE d ANODE d DP CATHODE NO. 2DP ANODE NO. 210CATHODE g ANODE g NO PINNO PINB CATHODE NO. 2 B ANODE NO. 211 A CATHODE NO. 2 A ANODE NO. 212 F CATHODE NO. 2 F ANODE NO. 213DIGIT NO. 2 ANODE DIGIT NO. 2 CATHODE 14DIGIT NO. 1 ANODE DIGIT NO. 1 CATHODE 15 B CATHODE NO. 1 B ANODE NO. 116 A CATHODE NO. 1 A ANODE NO. 117G CATHODE NO. 1G ANODE NO. 118F CATHODE NO. 1 F ANODE NO. 1NOTES:1. ALL DIMENSIONS IN MILLIMETRES (INCHES).2. ALL UNTOLERANCED DIMENSIONS ARE FOR REFERENCE ONLY.3. REDUNDANT ANODES.4. REDUNDANT CATHODES.5. FOR HDSP-5600/-5700 SERIES PRODUCT ONLY.Package DimensionsInternal Circuit DiagramNotes:1. See Figure 2 to establish pulsed conditions.2. Derate above 46°C at 0.54 mA/°C.3. See Figure 7 to establish pulsed conditions.4. Derate above 53°C at 0.45 mA/°C.5. See Figure 8 to establish pulsed conditions.HER/Orange HDSP-5500AlGaAs Red HDSP-H40x Yellow Green HDSP-H150HDSP-K40x HDSP-5700HDSP-5600 Description SeriesSeriesSeriesSeriesUnits Average Power per Segment or DP 9610580105mW Peak Forward Current per 160[1]90[3]60[5]90[7]mA Segment or DPDC Forward Current per Segment or DP 40[2]30[4]20[6]3018]mA Operating Temperature Range -20 to +100[9]-40 to +100°C Storage Temperature Range -55 to +100°C Reverse Voltage per Segment or DP 3.0V Lead Solder Temperature for 3 Seconds 260°C(1.60 mm [0.063 in.] below seating plane)Absolute Maximum Ratings6. Derate above 81°C at 0.52 mA/°C.7. See Figure 9 to establish pulsed conditions.8. Derate above 39°C at 0.37 mA/°C.9. For operation below -20°C, contact your local Agilent components sales office or an authorized distributor.Electrical/Optical Characteristics at T A = 25°CAlGaAs RedDeviceSeriesHDSP- Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment[1,2,5]I V9.116.0mcd I F = 20 mA(Digit Average)1.8I F = 20 mAForward Voltage/Segment or DP V F V2.03.0I F = 100 mAH15XPeak WavelengthλPEAK645nmDominant Wavelength[3]λd637nmReverse Voltage/Segment or DP[4]V R 3.015V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-Pin400°C/W/to-Pin SegHigh Efficiency RedDeviceSeriesHDSP- Parameter Symbol Min.Typ.Max.Units Test Conditions9002800I F = 10 mA Luminous Intensity/Segment[1,2,6]I Vµcd(Digit Average)3700I F = 60 mA Peak:1 of 6 dfForward Voltage/Segment or DP V F 2.1 2.5V I F = 20 mA 55XXPeak WavelengthλPEAK635nmDominant Wavelength[3]λd626nmReverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-Pin345°C/W/to-Pin SegYellowDeviceSeriesHDSP- Parameter Symbol Min.Typ.Max.Units Test Conditions6001800I F = 10 mA Luminous Intensity/Segment[1,2]I Vµcd(Digit Average)2750I F = 60 mA Peak:1 of 6 dfForward Voltage/Segment or DP V F 2.1 2.5V I F = 20 mA 57XXPeak WavelengthλPEAK583nmDominant Wavelength[3,7]λd581.5586592.5nmReverse Voltage/Segment or DP[4]V R 3.040V I R = 100 µATemperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-Pin345°C/W/to-Pin SegOrangeDeviceSeriesHDSP- Parameter Symbol Min.Typ.Max.Units Test Conditions Luminous Intensity/Segment I V 2.37mcd I F = 10 mA(Segment Average)[1,2]Forward Voltage/Segment or DP V F 2.1 2.5V I F = 20 mAPeak WavelengthλPEAK600nm H40x Dominant Wavelength[3]λd603nm I F = 10 mA K40x Reverse Voltage/Segment or DP[4]V R 3.030V I R = 100 µA Temperature Coefficient of∆V F/°C-2mV/°CV F/Segment or DPThermal Resistance LED Junction-RθJ-Pin345°C/W/to-Pin SegDeviceSeries HDSP-ParameterSymbol Min.Typ.Max.UnitsTest Conditions 9002500I F = 10 mALuminous Intensity/Segment [1,2]I Vµcd(Digit Average)`3100I F = 60 mA Peak:1 of 6 df Forward Voltage/Segment or DPV F 2.1 2.5V I F = 10 mA56XXPeak Wavelength λPEAK 566nm Dominant Wavelength [3,7]λd 571577nm Reverse Voltage/Segment or DP [4]V R 3.050V I R = 100 µATemperature Coefficient of ∆V F /°C -2mV/°C V F /Segment or DPThermal Resistance LED Junction-R θJ-Pin345°C/W/to-PinSegHigh Performance GreenNotes:1. Device case temperature is 25°C prior to the intensity measurement.2. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.3. The dominant wavelength, λd , is derived from the CIE chromaticity diagram and is that single wavelength which defines the color of the device.4. Typical specification for reference only. Do not exceed absolute maximum ratings.5. For low current operation, the AlGaAs HDSP-H10X series displays are recommended. They are tested at 1 mA dc/segment and are pin for pin compatible with the HDSP-H15X series.6. For low current operation, the HER HDSP-555X series displays are recommended. They are tested at 2 mA dc/segment and are pin for pin compatible with the HDSP-550X series.7. The Yellow (HDSP-5700) and Green (HDSP-5600) displays are categorized for dominant wavelength. The category is designated by a number adjacent to the luminous intensity category letter.AlGaAs RedFigure 2. Maximum Tolerable Peak Current vs. Pulse Duration – AlGaAs Red.Figure 1. Maximum Tolerable Peak Current vs.Pulse Duration – Red.Figure 3. Maximum Allowable DC Current vs.Ambient Temperature.Figure 4. Forward Current vs.Forward Voltage.HER, Yellow, Green, OrangeFigure 7. Maximum Tolerable Peak Currentvs. Pulse Duration – HER, Orange.Figure 8. Maximum Tolerable Peak Current vs. Pulse Duration – Yellow.Figure 5. Relative Luminous Intensity vs. DC Forward Current.Figure 6. Relative Efficiency (Luminous Intensity per Unit Current) vs. Peak Current.I D C M A X . – M A X I M U M D C C U R R E N T P E R S E G M E N T – m AT A – AMBIENT TEMPERATURE – °C 5030102051525354045I F – F O R W A R D C U R R E N T P E R S E G M E N T – m AV F – FORWARD VOLTAGE – VR E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D T O 1 A T 20 m A )I F – FORWARD CURRENT PER SEGMENT – mA204010305152535ηP E A K – N O R M A L IZ E D R E L A T I V E E F F I C I E N C YI PEAK – PEAK FORWARD CURRENTPER SEGMENT – mA40051015202530352010090807060504030T – AMBIENT TEMPERATURE – °C AI M A X – M A X I M U M D C C U R R E N T P E R S E G M E N T – m AD C 4550110120Figure 11. Forward Current vs.Forward Voltage.Figure 9. Maximum Tolerable PeakCurrent vs. Pulse Duration – Green.Figure 10. Maximum Allowable DC Current vs.Ambient Temperature.Figure 12. Relative LuminousIntensity vs. DC Forward Current.Figure 13. Relative Efficiency (Luminous Intensity per Unit Current) vs. Peak Current.Electrical/OpticalFor more information onelectrical/optical characteristics,please see Application Note 1005.Contrast EnhancementFor information on contrastenhancement please see Application Note 1015.Soldering/CleaningCleaning agents from the ketone family (acetone, methyl ethyl ketone, etc.) and from thechlorinated hydrocarbon family(methylene chloride, trichloro–ethylene, carbon tetrachloride,etc.) are not recommended for cleaning LED parts. All of these various solvents attack or dissolve the encapsulating epoxies used to form the package of plastic LED parts.For information on soldering LEDs please refer to Application Note 1027.I F – F O R W A R D C U R R E N T P E R S E G M E N T – m AV F – FORWARD VOLTAGE – VR E L A T I V E L U M I N O U S I N T E N S I T Y (N O R M A L I Z E D A T 10 m A )I F – DC FORWARD CURRENT – mAηV – R E L A T I V E E F F I C I E N C Y (N O R M A L I Z E D T O 1 A T 10 m A P E R S E G M EN T )0.6I PEAK – PEAK FORWARD CURRENTPER SEGMENT – mA902070801001.61.41.31.10.90.860504030100.71.01.21.5HDSP-H15x IV Bin Category Min.Max.K 9.2016.90L 13.8025.30M 20.7038.00N 31.1056.90O 46.6085.40Intensity Bin Limits (mcd)AlGaAs RedHDSP-550x/552x IV Bin Category Min.Max.E 0.91 1.67F 1.37 2.51G 2.05 3.76H 3.08 5.64I 4.628.64J 6.9312.70K 10.3919.04HERHDSP-570x/572xIV Bin Category Min.Max.D 0.61 1.11E 0.91 1.67F 1.37 2.51G 2.05 3.76H 3.08 5.64I 4.628.64J 6.9312.70K 10.3919.04YellowHDSP-560x/562x IV Bin Category Min.Max.E 0.91 1.67F 1.37 2.51G 2.05 3.76H 3.08 5.64I 4.618.46GreenColor CategoriesNote:All categories are established for classification of products. Products may not be available in all categories. Please contact your Agilent representatives for further clarification/information.10HDSP-H40x/K40x IV Bin Category Min.Max.B 0.77 1.17C 0.95 1.45D 1.19 1.82E 1.49 2.27F 1.85 2.89G 2.32 3.54H 2.904.43Orange元器件交易网元器件交易网/semiconductorsFor product information and a complete list ofdistributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or(408) 654-8675Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 271 2451India, Australia, New Zealand: (+65) 271 2394Japan: (+81 3) 3335-8152(Domestic/Interna-tional), or 0120-61-1280(Domestic Only)Korea: (+65) 271 2194Malaysia, Singapore: (+65) 271 2054Taiwan: (+65) 271 2654Data subject to change.Copyright © 2002 Agilent Technologies, Inc.Obsoletes 5988-0383ENJanuary 17, 20025988-4273EN。
MRF系列产品介绍
MRF系列产品介绍(仅其中一部分)型号功能MRF581 5G 0.6WMRF181 800-1G 10WMRF182 1G 30WMRF281 800-2.6G 4WMRF282 2.6G 20WMRF284 800-2.6G 30W 带螺丝座MRF20060 1.7-2.6G 60WMRF9045 9G 45WMRF5003 520M 15WMRF5007 520M 15WMRF1517 520M 15WMRF1507 520M 15WMRF1511 175M 15WMRF1518 175M 15WMRF553 175M 1.5W33P50 520M 1W2SK2595 1G 10WMRF10005960-1215 MHz, 5.0 W, 28 V 微波功率晶体管MRF10031960-1215 MHz, 30 W (Peak), 36 V 微波功率晶体管MRF10120960-1215 MHz, 120 W (Peak), 36 V 微波功率晶体管MRF101501025-1150 MHz, 150 W (Peak), 50 V 微波功率晶体管MRF103501025-1150 MHz, 350 W (Peak), 50 V 微波功率晶体管MRF105021025-1150 MHz, 500 W (Peak), 50 V 微波功率晶体管MRF134达到400 MHz, 5.0 W, 28 V N 宽带射频功率MOSFETMRF136达到400 MHz, 15 W, 28 V N 宽带射频功率MOSFET MRF141175 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF141G175 MHz, 300 W, 28 V N 宽带射频功率MOSFETMRF148A达到175 MHz, 30 W, 50 V N 宽带射频功率MOSFETMRF150达到150 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151175 MHz, 150 W, 50 V N 宽带射频功率MOSFETMRF151G175 MHz, 300 W, 50 V N 宽带射频功率MOSFETMRF15480 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF157达到80 MHz, 600 W, 50 V N 宽带射频功率MOSFETMRF158达到500 MHz, 2.0 W, 28 V TMOS N 宽带射频功率FETMRF160500 MHz, 4.0 W, 28 V N 宽带射频功率MOSFETMRF160061.6 GHz, 6.0 W, 28 V 射频功率晶体管MRF160301.6 GHz, 30 W, 28 V RF 射频功率晶体管MRF166C500 MHz, 20 W, 28 V N 宽带射频功率MOSFETMRF166W500 MHz, 40 W, 28 V TMOS N宽带射频功率FETMRF171A150 MHz, 45 W, 28 V N 宽带射频功率MOSFETMRF173175 MHz, 80 W, 28 V N 宽带射频功率MOSFETMRF174200 MHz, 125 W, 28 V N 宽带射频功率MOSFETMRF177400 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF275G100–500 MHz, 150 W, 28 V N 宽带射频功率MOSFETMRF275L500 MHz, 100 W, 28 V N 宽带射频功率MOSFETMRF42630 MHz, 25 W, 28 V 射频功率晶体管NPN SiMRF587500 MHz, 15 V, NF = 3.0 dB, 高频晶体管MRFIC1818 1.7-1.9G 2WMRF183 1G 45WMRF187 800-960MHz 85WMRF7042 900MHz 45WMRF175 400MHz 200WMRF581 5G 0.6W2SK2596 800-960MHz 1.5WBFG10 25G 0.6VBFG21 18G 4.5V 0.5A 0.6WBFG403 17G 4.5V 16MA 0.3WBFG410 22G 4.5V 12MA 135MWBFG425 25G 4.5V 30MA 135MWBFG450 45G 0.2WBFG540 45G 3V 30MA 135MWBFG541 9G 0.6WBLT81 800-960M 1.2WTP3022 800-960M 15WTDA1576 ICSRF7062 800-960M 150WMHL9236 800-960M 3WMHL7008 800-960M 3WMHL9128 800-960M 3WATF10136 4G 0.4WCMM2308 800-2.7G 1WCMM1330 1.7-1.9G 2WPF0030 860-915M 7W终端负载50欧5W 3G,18G 驻波小于1.06高频电阻50欧100欧30W 100W 3G型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRF281 800-2.6G 4W 4K 10 BFG10 25G 0.6W 10K 1MRF282 800-2.6G 10W 4K 15 BFG21 18G 4.5V 0.5A 0.6W 5K 1MRF284 800-2.6G 30W 带螺丝座4K 20 BFG403 17G 4.5V 16MA 0.3W 5K 0.5 MRF20060 1.7-2.6G 60W 6K 30 BFG410 22G 4.5V 12MA 135MW 5K 0.5 MRF181 800-960M 10W 2K 10 BFG425 25G 4.5V 30MA 135MW 4K 0.5 MRF182 1G 30W 500PC 15 BFG450 45G 0.2W 1K 3MRFIC1818 1.7-1.9G 2W 2K 10 BFG540 45G 3V 30MA 135MW 2K 3MRF187 800-960M 85W 1K 30 BFG541 9G 0.6W 3K 0.5MRF7042 900M 45W 2K 15 BFG198 9G 1W 3K 0.5MRF9045 9G 45W 200PC 30 TP3022 800-960M 15W 4K 6MRF581 5G 0.6W 5K 0.5 TDA1576 IC 2K 2MRF5003 520M 15W 5K 3 SRF7062 800-960M 150W 2K 40MRF5007 520M 15W 5K 5 MHL9236 800-960M 3W 200PC 20MRF1517 520M 15W 2K 5 MHL7008 800-960M 3W 500PC 15MRF1507 520M 15W 2K 5 MHL9128 800-960M 3W 500PC 15MRF1511 175M 15W 2K 5 ATF10136 4G 0.4W 10K 1.5MRF1518 175M 15W 1K 5 CMM2308 800-2.7G 1W 10K 1.5MRF553 175M 1.5W 6K 0.5 CMM1330 1.7-1.9G 2W 5K 2MRF137 225MHz 30W 100PC 20 RF2125 1.5-2.2G 1W 1K 5MRF141 225MHZ 150W 100PC 40 PF0030 860-915M 7W 2K 2MRF151G 175MHz 300W 500PC 100 2SC1971 175MHz 7W 5K 1MRF154 150MHz 600W 500PC 200 2SC3356 6.5G 0.2W 5K 0.1MRF175G 500MHz 150W 500PC 100 2SC3357 6.5G 2W 5K 0.2MRF6404 1.8-2G 1K 10 2SC2407 500MHz 0.6W 10K 0.2BLT50 500M 1.2W 5K 0.6 2SC1906 1G 150MW 10K 0.05BLT81 400-960M 1.2W 3K 1 BLU98 5G 0.7W 5K 0.52SK2596 800-960M 1.5W 5K 0.5 33P55 800-960MHz 60W 5K 102SK2595 800-960M 10W 10K 3 E626 800-960Mhz 60W 5K 103SK228 1G 高放双栅管5K 0.15 终端负载50欧5W 3G,18G 驻波小于1.06 3K 10,100温补晶体12.8MHZ 贴片7x7M 5k 3 高频电阻50欧100欧30W 100W 3G 10k 2 MRF92822A 7W 手持对讲机/长距离无绳电话/车载台/手机专用功率发射晶体管集成电路ICMC3361 10K 0.1 HT9200 5K 0.2MC33110 5K 0.2 HT9170 5K 0.2MC34119 5K 0.1 93C66 5K 0.1LM386 5K 0.1 24C08 5K 0.2M54958 5K 1.5 EM92547 5K 0.2M64082 5K 0.5 KA4588 5K 0.1TB31202 5K 0.4 KA567 5K 0.1手机功放及常用元件型号技术指标数量单价(US$) 型号技术指标数量单价(US$)MRFIC0913 800-1000MHZ 2W 现货面议AP109 900MHZ 2W 现货面议27E31 900MHZ 2W 现货面议AP119 1800MHZ 2W 现货面议08K38 900MHZ 2W 现货面议4370451 900MHZ 2W 现货面议08K40 900MHZ 2W 现货面议4370453 1800MHZ 2W 现货面议08K07 900MHZ 2W 现货面议TRF6053 900MHZ 2W 现货面议08K11 900MHZ 2W 现货面议TRF2253 频率合成IC 现货面议PF01420B 900MHZ 2W 现货面议13MHZ 温补晶体现货面议PF01412A 1800MHZ 2W 现货面议881-942 声表滤波器现货面议PF01411B 900MHZ 2W 现货面议PF014110B 1800MHZ 2W 现货面议常用元件MRF5711 8G 0.33W 现货面议BFQ67 8G 0.3W 现货面议MRF5811 5G 0.7W 现货面议BFG540 9G 0.4W 现货面议MMBR941 8G 0.25W 现货面议BFR182W 8G 0.3W 现货面议MMBR503 1G 0.3W 现货面议BFR91 6G 0.3W 现货面议MMBR901 4G 0.3W 现货面议BU508 现货面议84UD22182EB-9C 现货面议Y759B 现货面议F741529AGHH 现货面议08122B 现货面议TWL3011GGM 现货面议089711747 现货面议LMST 现货面议LS28 现货面议。
MGP50F-R100-F中文资料
PULSE WITHSTAND CHART (increased pulse levels avail.) MGP SERIES - Conformal CoatedMHM SERIES - Hermetic SealedMETAL FILM MELF RESISTORSMetal film performance, economical price!RCD Series MGP melf* resistors utilize precision film technologywhich is inherently low inductance, low noise, and high stabilityeven after extended periods. Heavy solder plating assuresexcellent solderability and long shelf life. Series MHM offershermetically sealed environmental protection and utmostreliability. MGP series parts are color banded, MHM are alphanu-merically marked with resistance and tolerance. *Melf = metalelectrode face-bonded (cylindrical component).OPTIONSOption S: Increased power (refer to chart below)Option P: Increased pulse capabilityOption F: Flameproof coating (per UL94V0)Dozens of additional options are available... burn-in, specialmarking, non-standard values, high frequency designs,matched sets, temp. sensitive, zero-ohm jumpers, etc.Customized components are an RCD specialty!Pulse capability is dependent on res. value, waveform, repetition rate,current, etc. Chart is a general guide for Opt. P pulse resistant version,single pulse, with peak voltage levels not exceeding 1KV for MGP55SP,700V MGP50SP, and 350V MGP45SP. Max pulse capability for standardparts (w/o Opt.P) is 60% less. For improved performance and reliability,a 30-50% pulse derating factor is recommended (or larger for frequentpulses, high values, etc). Consult RCD for application assistance. Verifyselection by evaluating under worst-case conditions.APPLICATION NOTE #1: Temperature Rise (T HS)The T HS of SM resistors depends largely on heat conduction through theend terminations, which can vary significantly depending on PCBmaterial and layout (i.e. pad size, trace area, copper thickness, air flow,etc.). Typical temp. rise at full rated power is 30-50°C (Opt.S=50-70°C).APPLICATION NOTE #2: Resistor SelectionMGP resistors are ideal for semi-precision SM applications and aregenerally more economical than thin film rectangular chips. For lesscritical applications, consider low cost MCF carbon film melf resistors.For increased performance, especially in high humidity applications(such as Naval or tropical environments), consider MHM series. If flatchips are preferred, consider BLU series (precision) or MC series (semi-precision/ general purpose). For higher power, consider MPF series.Industry’s widest selection of metal film MELF resistors-.1W to .5W, 0.1Ω to 22MΩ, 0.1% to 5%, 10ppm to 100ppm/°CLow cost, quick delivery (available on SWIFT TM program)Precision performance, excellent environmental stabilitySeries MHM hermetic sealed is an industry first!SPECIFICATIONS1 Max working voltage determined E= √(PxR), not to exceed the value listed.2 Consult factory for non-standard range3 PreliminaryInch [mm]* Typical performance levels listed are for standard products from 10Ω to 1M.Consult factory for performance levels of extended range and modified designs.** To ensure utmost reliability, care should be taken to avoid potential sources ofionic contaminationDCRepyTW ega t t a)d t S(ega t t aW)'S'.t pO(ega t l oVgn i t aR2,1ecna t s i seRegnaR2c i r t ce l e i Dh t gne r t S2]3.[210.±L]2.[80.±D).n iM(W)xaM(t2 54PGM W1.W51.V11ΩM1o t V2]0.2[970.]21.1[440.]3.[210.]670.[30.5PGM W521.W52.V281.0ΩM1o t V52]4.3[531.]54.1[750.]5.[20.]1.[40.55PGM W52.W5.V521.0ΩM22o t V53]9.5[232.]51.2[580.]6.[420.]51.[60.55MHM3W521.W52.V5201ΩK2o t V53]0.7[572.]50.3[21.]72.1[50.]51.[60.MGP55SPMGP50SPMGP45SP1uS 10uS 100uS 1mS 10mS 100mSPulse DurationPeakPower(Watts)1000100101OptionsRCD Components Inc, 520 E.Industrial Park Dr, Manchester, NH, USA 03109 Tel: 603-669-0054 Fax: 603-669-5455 Email:sales@20Term.W isRoHScompliant& 260°Ccompatible元器件交易网。
MRFE6S9060NR1;中文规格书,Datasheet资料
RF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large -signal, common -source amplifier applications in 28 volt base station equipment.•Typical Single-Carrier N-CDMA Performance @ 880 MHz, V DD = 28 Volts,I DQ = 450 mA, P out = 14 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain — 21.1 dB Drain Efficiency — 33%ACPR @ 750 kHz Offset — -45.7 dBc in 30 kHz Channel Bandwidth •Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness GSM EDGE Application•Typical GSM EDGE Performance: V DD = 28 Volts, I DQ = 500 mA, P out = 21 Watts Avg., Full Frequency Band (920-960 MHz)Power Gain — 20 dB Drain Efficiency — 46%Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -78 dBc EVM — 1.5% rms GSM Application•Typical GSM Performance: V DD = 28 Volts, I DQ = 500 mA, P out = 60 Watts,Full Frequency Band (920-960 MHz)Power Gain — 20 dB Drain Efficiency — 63%Features•Characterized with Series Equivalent Large-Signal Impedance Parameters •Integrated ESD Protection•225°C Capable Plastic Package •RoHS Compliant•In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +66Vdc Gate-Source Voltage V GS -0.5, +12Vdc Maximum Operation Voltage V DD 32, +0Vdc Storage Temperature Range T stg -65 to +150°C Case Operating Temperature T C 150°C Operating Junction Temperature (1,2)T J225°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 78°C, 14 W CWR θJC0.770.88°C/W1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product.3.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.Document Number: MRFE6S9060NRev. 1, 10/2007Freescale Semiconductor Technical DataMRFE6S9060NR1MRFE6S9060NR1Table 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114) 2 (Minimum)Machine Model (per EIA/JESD22-A115) B (Minimum)Charge Device Model (per JESD22-C101)III (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 66 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——10μAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 200 μA)V GS(th)1 2.23Vdc Gate Quiescent Voltage(V DD = 28 Vdc, I D = 450 mAdc, Measured in Functional Test)V GS(Q)234Vdc Drain-Source On-Voltage(V GS = 10 Vdc, I D = 1.5 Adc)V DS(on)0.050.270.4VdcDynamic CharacteristicsReverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss — 1.1—pF Output Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C oss —33—pF Input Capacitance(V DS = 28 Vdc, V GS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)C iss—109—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 450 mA, P out = 14 W Avg., f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @0.01% Probability on CCDF Power Gain G ps 2021.123dB Drain EfficiencyηD 30.533—%Adjacent Channel Power Ratio ACPR —-45.7-44dBc Input Return LossIRL—-18-9dB (continued)MRFE6S9060NR1Table 5. Electrical Characteristics (T C = 25°C unless otherwise noted) (continued)CharacteristicSymbolMinTypMaxUnitTypical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture Optimized for 920-960 MHz, 50 ohm system) V DD = 28 Vdc,I DQ = 500 mA, P out = 21 W Avg., f = 920-960 MHz, GSM EDGE Signal Power Gain G ps —20—dB Drain Efficiency ηD —46—%Error Vector MagnitudeEVM — 1.5—%Spectral Regrowth at 400 kHz Offset SR1—-62—dBc Spectral Regrowth at 600 kHz OffsetSR2—-78—dBcTypical CW Performances (In Freescale GSM Test Fixture Optimized for 920-960 MHz, 50 ohm system) V DD = 28 Vdc, I DQ = 500 mA,P out = 60 W, f = 920-960 MHz Power Gain G ps —20—dB Drain Efficiency ηD —63—%Input Return LossIRL —-12—dB P out @ 1 dB Compression Point (f = 940 MHz)P1dB—67—WTypical Performances (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 450 mA, 865-900 MHz Bandwidth Video Bandwidth @ 60 W PEP P out where IM3 = -30 dBc (Tone Spacing from 100 kHz to VBW)ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands)VBW—3—MHzGain Flatness in 35 MHz Bandwidth @ P out = 14 W Avg.G F —0.27—dB Gain Variation over Temperature (-30°C to +85°C)ΔG —0.011—dB/°C Output Power Variation over Temperature (-30°C to +85°C)ΔP1dB—0.088—dBm/°CMRFE6S9060NR1Figure 1. MRFE6S9060NR1 Test Circuit SchematicZ90.057″ x 0.525″ MicrostripZ100.360″ x 0.270″ MicrostripZ110.063″ x 0.270″ MicrostripZ120.360″ x 0.065″ MicrostripZ130.170″ x 0.065″ MicrostripZ140.880″ x 0.065″ MicrostripZ150.260″ x 0.065″ MicrostripPCB Taconic RF-35 0.030″, εr = 3.5Z10.215″ x 0.065″ MicrostripZ20.221″ x 0.065″ MicrostripZ30.500″ x 0.100″ MicrostripZ40.460″ x 0.270″ MicrostripZ50.040″ x 0.270″ MicrostripZ60.280″ x 0.270″ x 0.530″TaperZ70.087″ x 0.525″ MicrostripZ80.435″ x 0.525″ MicrostripTable 6. MRFE6S9060NR1 Test Circuit Component Designations and ValuesPart Description Part Number Manufacturer B1Ferrite Bead2743019447Fair RiteB2Ferrite Bead274021447Fair RiteC1, C8, C14, C1547 pF Chip Capacitors ATC100B470JT500XT ATCC2, C4, C130.8-8.0 pF Variable Capacitors, Gigatrim2729152JohansonC3 3.0 pF Chip Capacitor ATC100B3R0JT500XT ATCC5, C615 pF Chip Capacitors ATC100B150JT500XT ATCC7, C16, C1710 μF, 35 V Tantalum Capacitors T491D106K035AT KemetC9100 μF, 50 V Electrolytic Capacitor MCHT101M1HB-1017-RH MulticompC10, C1112 pF Chip Capacitors ATC100B120JT500XT ATCC12 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATCC180.56 μF Chip Capacitor ATC700A561MT150XT ATCC19470 μF, 63 V Electrolytic Capacitor EKME630ELL471MK255MulticompL1, L212.5 nH Inductor A04T-5CoilcraftR1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA VishayR2560 kΩ, 1/4 W Chip Resistor CRCW12065600FKEA VishayR312 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA VishayR427 W, 1/4 W Chip Resistor CRCW120627R0FKEA VishayFigure 2. MRFE6S9060NR1 Test Circuit Component LayoutMRFE6S9060NR1MRFE6S9060NR1TYPICAL CHARACTERISTICS0−5−10−15−20G p s , P O W E R G A I N (d B )I R L , I N P U T R E T U R N L O S S (d B )A C P R (dB c ), A L T 1 (d B c )980820f, FREQUENCY (MHz)Figure 3. Single-Carrier N-CDMA Broadband Performance@ P out = 14 Watts Avg.960940920900880860−704020−40−50ηD , D R A I N E F F I C I E N C Y (%)−60−30302120181615141719840Figure 5. Two-Tone Power Gain versusOutput Power 100161P out , OUTPUT POWER (WATTS) PEP21191710200G p s , P O W E R G A I N (d B )2018Figure 6. Third Order Intermodulation Distortionversus Output Power1P out , OUTPUT POWER (WATTS) PEP10010200MRFE6S9060NR1TYPICAL CHARACTERISTICSFigure 7. Intermodulation Distortion Productsversus Output Power10−80−10P out, OUTPUT POWER (WATTS) PEP−20−30−40−501200I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )−60−70100Figure 8. Intermodulation Distortion Productsversus Tone Spacing10−700TWO−TONE SPACING (MHz)−20−30−40−500.180I M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )Figure 9. Pulsed CW Output Power versusInput Power37P in , INPUT POWER (dBm)5856524832303634505427P o u t , O U T P U T P O W E R (d B m )A C P R , A D J A C E N T C H A N N E L P O W E R R A T I O (dB c )A L T 1,C H A N N E L P O W E R (d B c )Figure 10. Single-Carrier N-CDMA ACPR, ALT1, Power Gainand Drain Efficiency versus Output Power−80P out , OUTPUT POWER (WATTS) AVG.−20−50−60−70110ηD , D R A I N E F F I C I E N C Y (%), G p s , P O W E R G A I N (d B )10029313335−40−30−60−1015755535149280102030405060−155152535455565−25−35−45−55−65−75MRFE6S9060NR1TYPICAL CHARACTERISTICS14222118G p s , P O W E R G A I N (d B )201925090T J , JUNCTION TEMPERATURE (°C)Figure 13. MTTF versus Junction TemperatureThis above graph displays calculated MTTF in hours when the device is operated at V DD = 28 Vdc, P out = 14 W Avg., and ηD = 32.5%.MTTF calculator available at http://rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators by product.110130150170190210230171516MRFE6S9060NR1N-CDMA TEST SIGNAL100.00011000PEAK−TO−AVERAGE (dB)Figure 14. Single-Carrier CCDF N-CDMA1010.10.010.0012468P R O B A B I L I T Y (%)−60−110−10(d B )−20−30−40−50−70−80−90−1002.90.7 2.21.50−0.7−1.5−2.2−2.9−3.6 3.6f, FREQUENCY (MHz)Figure 15. Single-Carrier N-CDMA SpectrumMRFE6S9060NR1Figure 16. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω850865880 2.28 + j0.232.20 + j0.472.18 + j0.330.44 - j0.200.44 - j0.070.45 + j0.50V DD = 28 Vdc, I DQ = 450 mA, P out = 14 W Avg.8959102.00 + j0.682.15 + j0.610.48 + j0.180.52 + j0.29Z source =Test circuit impedance as measured fromgate to ground.Zload=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching NetworkZ o = 5 Ωf = 850 MHzf = 910 MHzZ sourcef = 850 MHzf = 910 MHzZ load分销商库存信息: FREESCALE MRFE6S9060NR1。
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A R C H I V E I N F O R M A T I O NA R C H I V EReplaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations.RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsDesigned for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large -signal, common -source amplifier applications in 28 Volt base station equipment.•Typical 2-carrier N-CDMA Performance: V DD = 28 Volts, I DQ = 750 mA,P out = 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging,Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.Power Gain — 14 dB Drain Efficiency — 23%IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth •Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power•Characterized with Series Equivalent Large-Signal Impedance Parameters •Internally Matched for Ease of Use •Integrated ESD Protection•200°C Capable Plastic Package•In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.Table 1. Maximum RatingsRatingSymbol Value Unit Drain-Source Voltage V DSS -0.5, +65Vdc Gate-Source VoltageV GS -0.5, +15Vdc Total Device Dissipation @ T C = 25°C Derate above 25°C P D 218.81.25W W/°C Storage Temperature Range T stg -65 to +175°C Operating Junction TemperatureT J200°CTable 2. Thermal CharacteristicsCharacteristicSymbol Value (1)Unit Thermal Resistance, Junction to Case Case Temperature 75°C, 12 W CWR θJC0.80°C/W1.Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to /rf. Select Documentation/Application Notes - AN1955.Document Number: MRF5S19060MRev. 5, 5/2006Freescale Semiconductor Technical DataA R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I O N2RF Device DataFreescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1Table 3. ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JESD22-A114)1C (Minimum)Machine Model (per EIA/JESD22-A115) C (Minimum)Charge Device Model (per JESD22-C101)IV (Minimum)Table 4. Moisture Sensitivity LevelTest MethodologyRating Package Peak TemperatureUnit Per JESD 22-A113, IPC/JEDEC J-STD-0203260°CTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted)CharacteristicSymbol Min Typ Max Unit Off CharacteristicsZero Gate Voltage Drain Leakage Current (V DS = 65 Vdc, V GS = 0 Vdc)I DSS ——10μAdc Zero Gate Voltage Drain Leakage Current (V DS = 28 Vdc, V GS = 0 Vdc)I DSS ——1μAdc Gate-Source Leakage Current (V GS = 5 Vdc, V DS = 0 Vdc)I GSS——1μAdcOn CharacteristicsGate Threshold Voltage(V DS = 10 Vdc, I D = 225 μAdc)V GS(th) 2.5— 3.5Vdc Gate Quiescent Voltage(V DS = 28 Vdc, I D = 750 mAdc)V GS(Q)— 3.8—Vdc Drain-Source On-Voltage(V GS = 5 Vdc, I D = 2.25 Adc)V DS(on)—0.26—Vdc Forward Transconductance(V DS = 10 Vdc, I D = 2.25 Adc)g fs—5—SDynamic Characteristics (1)Reverse Transfer Capacitance(V DS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V GS = 0 Vdc)C rss—1.5—pFFunctional Tests (In Freescale Test Fixture, 50 ohm system) V DD = 28 Vdc, I DQ = 750 mA, P out = 12 W Avg., f1 = 1930 MHz,f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2-carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @0.01% Probability on CCDF.Power Gain G ps 12.51416dB Drain EfficiencyηD 2123—%Intermodulation Distortion IM3—-37-35dBc Adjacent Channel Power Ratio ACPR —-51-48dBc Input Return LossIRL—-12-9dB1.Part is internally matched both on input and output.(continued)A R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ONMRF5S19060MR1 MRF5S19060MBR13RF Device DataFreescale SemiconductorTable 5. Electrical Characteristics (T C = 25°C unless otherwise noted) (continued)CharacteristicSymbolMinTypMaxUnitTypical RF Performance (50 ohm system)Pulse Peak Power(V DD = 28 Vdc, 1-Tone CW Pulsed, I DQ = 750 mA, t ON = 8 μs, 1% Duty Cycle)P sat—110—WVideo Bandwidth(V DD = 28 Vdc, P out = 60 W PEP , I DQ = 750 mA, Tone Spacing = 1 MHz to VBW, Δ IM3<2dB)VBW —35—MHzA R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I O N4RF Device DataFreescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1Figure 1. MRF5S19060MR1/MBR1 Test Circuit SchematicZ8*0.420″ x 0.083″ Microstrip Z9*0.975″ x 0.083″ Microstrip Z100.250″ x 0.083″ Microstrip Z110.700″ x 0.080″ Microstrip Z120.700″ x 0.080″ MicrostripPCBTaconic TLX8-0300, 0.030″, εr = 2.55* Variable for tuningZ10.250″ x 0.083″ Microstrip Z2*0.500″ x 0.083″ Microstrip Z3*0.500″ x 0.083″ Microstrip Z4*0.515″ x 0.083″ Microstrip Z50.480″ x 1.000″ Microstrip Z6 1.140″ x 0.080″ Microstrip Z70.600″ x 1.000″ MicrostripV Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturer C1 1 μF, 35 V Tantalum Capacitor TAJB105K35AVX C210 pF 100B Chip Capacitor 100B10R0CW ATC C3, C7, C12, C13 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C4, C5, C14, C1510 μF, 35 V Tantalum CapacitorsTAJD106K035AVX C6220 μF, 63 V Electrolytic Capacitor, Radial 13668221Philips C80.8 pF 100B Chip Capacitor 100B0R8BW ATC C9 1.5 pF 100B Chip Capacitor 100B1R5BW ATC C10 1.0 pF 100B Chip Capacitor 100B1R0BW ATC C110.2 pF 100B Chip Capacitor 100B0R2BWATCR1, R210 k W , 1/4 W Chip Resistors (1206)R310 W , 1/4 W Chip Resistors (1206)A R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ONMRF5S19060MR1 MRF5S19060MBR15RF Device DataFreescale SemiconductorFigure 2. MRF5S19060MR1/MBR1 Test Circuit Component LayoutFreescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.A R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ON6RF Device DataFreescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1TYPICAL CHARACTERISTICSFigure 5. Two-Tone Power Gain versusOutput Power 1001217116151410P out , OUTPUT POWER (WATTS) PEPG p s , P O W E R G A I N (d B )13Figure 6. Third Order Intermodulation Distortionversus Output Power110100P out , OUTPUT POWER (WATTS) PEPA R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ONMRF5S19060MR1 MRF5S19060MBR17RF Device DataFreescale SemiconductorTYPICAL CHARACTERISTICS10010161P out , OUTPUT POWER (WATTS) CWFigure 10. Power Gain and Drain Efficiencyversus CW Output Power101514131211Figure 11. Power Gain versus Output PowerP out , OUTPUT POWER (WATTS) CWI M D , I N T E R M O D U L A T I O N D I S T O R T I O N (d B c )30905070G p s , P O W E R G A I N (d B )A R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ON8RF Device DataFreescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1TYPICAL CHARACTERISTICS21010990T J , JUNCTION TEMPERATURE (°C)Figure 12. MTTF Factor versus Junction TemperatureThis above graph displays calculated MTTF in hours x ampere 2drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I D 2 for MTTF in a particular application.108107106120140160180200M T T F F A C T O R (H O U R S X A M P S 2)100110130150170190N-CDMA TEST SIGNAL100.00011000PEAK −TO−AVERAGE (dB)Figure 13. 2-Carrier CCDF N-CDMA1010.10.010.0012468P R O B A B I L I T Y (%)f, FREQUENCY (MHz)−1000Figure 14. 2-Carrier N-CDMA Spectrum−10−20−30−40−50−60−70−80−9061.5 4.530−1.5−3−4.5−6−7.57.5(d B )A R C H I V E I N F O R M A T I O NA R C H I V E I N F O R M A T I ONMRF5S19060MR1 MRF5S19060MBR19RF Device DataFreescale SemiconductorFigure 15. Series Equivalent Source and Load Impedancef MHz Z sourceΩZ load Ω1930196019902.60 - j3.182.44 - j2.532.50 - j2.853.11 - j4.553.06 - j4.382.93 - j4.28V DD = 28 Vdc, I DQ = 750 mA, P out = 12 W Avg.Z o = 5 ΩZ sourcef = 1990 MHzf = 1930 MHzZ loadZ source =Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured from drain to ground.ZsourceZloadOutput Matching Networkf = 1930 MHzf = 1990 MHz10RF Device Data Freescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1NOTESMRF5S19060MR1 MRF5S19060MBR111RF Device DataFreescale SemiconductorNOTES12RF Device Data Freescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1PACKAGE DIMENSIONSPLASTICMRF5S19060MR1 BOTTOM VIEWMRF5S19060MR1 MRF5S19060MBR113RF Device DataFreescale Semiconductor14RF Device Data Freescale SemiconductorMRF5S19060MR1 MRF5S19060MBR1MRF5S19060MR1 MRF5S19060MBR115RF Device DataFreescale SemiconductorInformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. 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