LM4050AEX3-3.0-T中文资料
北京捷麦通信器材有限公司 R4050 开关量模块用户手册说明书
2013年10月北京捷麦通信器材有限公司R4050开关量模块用户手册 DATA ACQUISITION MODULES *************目录1概述 (3)1.1 特点 (3)1.2 外观和安装 (3)1.3 技术指标 (4)1.4指示灯状态 (4)2 电路连接 (5)2.1 输入电路连接 (5)2.2 输出电路连接 (6)2.3 通信电路的连接 (7)2.4 模块的输出值 (7)3 通用指令和模块的基本设置 (7)3.1 指令的基本格式 (7)3.2 设置模块配置－%AANNTTCCFF (9)3.3读配置信息－$AA2 (10)3.4读版本信息－$AAF (10)3.5 读复位状态－$AA5 (11)3.6 读模块名－$AAM (11)3.7写模块名－~AAO(数据) (12)4 采集和输出指令 (13)4.1同步采样－#** (13)4.2读同步数据－$AA4 (14)4.3数字输出－#AABBDD (14)4.4设置数字输出－@AA(数据) (15)4.5读数字输出/输入状态－$AA6 (16)4.6读数字输入/输出状态－@AA (16)4.7 读锁存状态－$AALS (17)4.8 清除锁存状态－$AAC (18)4.9 读入计数值－#AAN (19)4.10 清计数器－$AACN (19)5 遥控和报警指令及应用 (20)5.1 模式 (20)5.2读模块模式－#AAM (22)5.3设置模块模式－#AAMAB (23)5.4 读遥控目的地址－#AAR (24)5.5写遥控目的地址－#AAR（数据） (24)5.6读重发间隔时间－#AAT (25)5.7设置重发间隔时间－#AATDD (25)6 看门狗的使用和指令 (26)6.1 ~** (26)6.2 ~AA0 (27)6.3 ~AA1 (27)6.4~AA2 (28)6.5 ~AA3EVV (28)6.6 ~AA4V (29)6.7 ~AA5V (30)————————————————————————————————————————————————附件1：ASCII码对照表 (31)————————————————————————————————————————————————1概述1.1 特点R4050模块是R4000系列采集模块中的开关量输入输出模块，具有7路电压开关量输入，8路晶体管集电极开路输出。
英飞凌 FF450R33T3E3 XHP 3 模块 数据表
XHP ™3 模块 采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管特性•电气特性-V CES = 3300 V-I C nom = 450 A / I CRM = 900 A -低开关损耗-高直流电压稳定性-高短路能力-低 V CEsat-T vj op = 150°C -无与伦比的坚固性-V CEsat 带正温度系数•机械特性-碳化硅铝 (AlSiC) 基板提供更高的温度循环能力-绝缘的基板-封装的 CTI > 600可选应用•中压变流器•电机传动•牵引变流器•UPS 系统•风力发电机产品认证•根据 IEC 60747、60749 和 60068标准的相关测试，符合工业应用的要求。
描述FF450R33T3E3XHP ™3 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 5电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 6封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .151封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 60 s 6.0kV 局部放电熄弧电压V isol RMS, f = 50 Hz, Q PD≤ 10 pC 2.6kV 模块基板材料AlSiC爬电距离d Creep端子至散热器53.0mm 爬电距离d Creep端子至端子53.0mm 电气间隙d Clear端子至散热器36.0mm 电气间隙d Clear端子至端子26.0mm 相对电痕指数CTI > 600表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE25nH 模块引线电阻,端子-芯片R AA'+CC'T C=25°C, 每个开关0.31mΩ模块引线电阻,端子-芯片R CC'+EE'T C=25°C, 每个开关0.41mΩ储存温度T stg-40150°C 模块安装的安装扭距M根据相应的应用手册进行安装M6, 螺丝 4.25 5.75Nm端子安装扭矩M根据相应的应用手册进行安装M3, 螺丝0.9 1.1Nm M8, 螺丝810重量G700g 2IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = -40 °C3300VT vj = 150 °C3300连续集电极直流电流I CDC T vj max = 150 °C T C = 100 °C450A 集电极重复峰值电流I CRM t p受限于 T vj op900A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 450 A, V GE = 15 V T vj = 25 °C 2.50 2.75VT vj = 125 °C 2.90T vj = 150 °C 3.00 3.30栅极阈值电压V GEth I C = 12 mA, V CE = V GE, T vj = 25 °C 5.20 5.80 6.40V 栅极电荷Q G V GE = ±15 V, V CE = 1800 V12.5µC 内部栅极电阻R Gint T vj = 25 °C 1.3Ω输入电容C ies f = 1000 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V84nF 反向传输电容C res f = 1000 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V2nF 集电极-发射极截止电流I CES V CE = 3300 V, V GE = 0 V T vj = 25 °C5mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C400nA开通延迟时间(感性负载)t don I C = 450 A, V CE = 1800 V,V GE = ±15 V, R Gon = 0.7 ΩT vj = 25 °C0.530µs T vj = 125 °C0.570T vj = 150 °C0.580上升时间(感性负载)t r I C = 450 A, V CE = 1800 V,V GE = ±15 V, R Gon = 0.7 ΩT vj = 25 °C0.100µs T vj = 125 °C0.130T vj = 150 °C0.130关断延迟时间(感性负载)t doff I C = 450 A, V CE = 1800 V,V GE = ±15 V, R Goff = 3.3 ΩT vj = 25 °C 1.710µs T vj = 125 °C 1.860T vj = 150 °C 1.920下降时间(感性负载)t f I C = 450 A, V CE = 1800 V,V GE = ±15 V, R Goff = 3.3 ΩT vj = 25 °C0.130µs T vj = 125 °C0.240T vj = 150 °C0.270开通时间（阻性负载）t on_R I C = 500 A, V CE = 2000 V,V GE = ±15 V, R Gon = 0.7 ΩT vj = 25 °C 1.15µs开通损耗能量 (每脉冲)E on I C = 450 A, V CE = 1800 V,Lσ = 85 nH, V GE = ±15 V,R Gon = 0.7 Ω, di/dt =3650 A/µs (T vj = 150 °C)T vj = 25 °C500mJ T vj = 125 °C765T vj = 150 °C845关断损耗能量 (每脉冲）E off I C = 450 A, V CE = 1800 V,Lσ = 85 nH, V GE = ±15 V,R Goff = 3.3 Ω, dv/dt =2850 V/µs (T vj = 150 °C)T vj = 25 °C415mJ T vj = 125 °C610T vj = 150 °C670(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 2500 V,V CEmax=V CES-L sCE*di/dt t P≤ 10 µs,T vj≤ 150 °C1800A结－外壳热阻R thJC每个 IGBT28.4K/kW 外壳－散热器热阻R thCH每个 IGBT, λgrease= 1 W/(m*K)17.4K/kW 允许开关的温度范围T vj op-40150°C3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = -40 °C3300VT vj = 150 °C3300连续正向直流电流I F450A 正向重复峰值电流I FRM t P = 1 ms900A I2t-值I2t t P = 10 ms, V R = 0 V T vj = 125 °C82.9kA²sT vj = 150 °C68最大损耗功率P RQM T vj = 150 °C1000kW 最小开通时间t onmin10µs表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 450 A, V GE = 0 V T vj = 25 °C 3.10 3.50VT vj = 125 °C 2.75T vj = 150 °C 2.65 2.95反向恢复峰值电流I RM V R = 1800 V, I F = 450 A,V GE = -15 V, -di F/dt =3650 A/µs (T vj = 150 °C)T vj = 25 °C680A T vj = 125 °C680T vj = 150 °C680恢复电荷Q r V R = 1800 V, I F = 450 A,V GE = -15 V, -di F/dt =3650 A/µs (T vj = 150 °C)T vj = 25 °C230µC T vj = 125 °C445T vj = 150 °C525(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值反向恢复损耗（每脉冲）E rec V R = 1800 V, I F = 450 A,V GE = -15 V, -di F/dt =3650 A/µs (T vj = 150 °C)T vj = 25 °C220mJ T vj = 125 °C490T vj = 150 °C595结－外壳热阻R thJC每个二极管45.5K/kW 外壳－散热器热阻R thCH每个二极管, λgrease= 1 W/(m*K)19.3K/kW 允许开关的温度范围T vj op-40150°C5电路拓扑图Beispiel: PrimePACK-3+ CostdownCommon Collektorxx.03.2019 mit WW, Jürgen Esch36NTC 9,11,13T23,4D29651T1D187202.08.2021 Beispiel für A.Schulz10: NC图 1FF450R33T3E3XHP ™3 模块5 电路拓扑图6 封装尺寸6封装尺寸图 27 模块标签代码7模块标签代码图 3修订历史修订历史修订版本发布日期变更说明V1.02013-12-05Target datasheetV1.12014-08-25Target datasheetV1.22015-01-22Target datasheetV1.32015-10-16Target datasheetV1.42015-10-16Target datasheetV2.02016-05-18Preliminary datasheetV2.12016-09-02Preliminary datasheetV2.22016-12-23Preliminary datasheetV2.32018-02-14Preliminary datasheetV3.02018-12-12Final datasheetV3.12018-12-13Final datasheetV3.22020-01-27Final datasheetn/a2020-09-01Datasheet migrated to a new system with a new layout and new revisionnumber schema: target or preliminary datasheet = 0.xy; final datasheet =1.xy1.102021-11-04Final datasheet1.202022-04-06Final datasheet商标所有参照产品或服务名称和商标均为其各自所有者的财产。
IRFP340中文资料
Features
• 11A, 400V • rDS(ON) = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature
rDS(ON) gfs
td(ON) tr
td(OFF)
VGS = 10V, ID = 5.5A (Figures 8, 9)
VDS ≥ 50V, ID = 5.5A (Figure 12)
VDD = 200V, ID ≈ 11A, RGS = 9.1Ω, RL = 17.4Ω MOSFET Switching Times are Essentially Independent of Operating Temperature
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
COM-4050数字量输入输出模块说明书
COM-4050使用说明书一、COM-4050概述COM-4050提供7路数字量输入8路集电极开路数字量输出通道。
数字量输入端可用来检测行程开关、安全开关或远程数字量信号；输出端可接固态继电器，控制热电器，泵等设备。
COM-4050图：COM-4050技术说明：通道：7路数字量输入8路集电极开路数字量输出有效分辨率：16位数字量输入电平：逻辑电平0：＋1V（最大）逻辑电平1：＋3.5～＋30V数字量输出：集电极开路，最大负载30V 30mA电源：＋10～＋30V DC功耗：0.4W@24 V DC工作温度：-25℃~70℃I/O连接器类型：十针连接器外形尺寸：(长)120mm X（宽）75mm X (高)35mm内置看门狗定时器二、COM-4050硬件连线图1 COM-4050模块简单控制接线图图2 模块供电连接@PC机和COM4520模块的连接使用直通串口线@ 建议所有模块的+VS连接直流24V正(最好使用红色线),GND连接直流24V负(最好使用黑色线) @ COM4050模块的DATA+连接COM4520的DATA+(建议使用黄色线),DATA-连接COM4520的DATA-(建议使用绿色线)下图为数字量输入接线图：图3 COM4050数字量输入端接线当输入电压为0~1V时，对应DI通道为0；当输入电压为3.5~30V或者悬空时，对应DI通道为1；下图为开关量输出接线图：图4 COM4050数字量输出端接线DO都要外挂电源，电源的大小根据实际应用而定，电源的“—”端与模块的地相连，SSR的“—”端与DO相连，电流的上限为30mA .三、RTECH工具软件的使用.1.RTECH工具软件的安装双击RTECH工具软件安装包，然后按照提示一步步往下，完成工具软件的安装。
2.RTECH工具软件的快速使用1）打开工具软件，点击工具栏“查询”或查询快捷键，如下图界面所示：图52）弹出下图的“查询”窗口，选择串口以及波特率（可以多选），然后点击“搜索”。
4050W恒流源测试规格书
测试规格书产品名称： LED驱动电源产品型号：HR-SC-NO050-1A50W测试规格书更改记录：版本更改日期更改描述编制审核核准01 新编，适用于生产张立辉日期：日期：核准：日期：目录1.产品规格................................................................................................... 错误!未定义书签。
. 电气性能....................................................................................... 错误!未定义书签。
输入特性........................................................................... 错误!未定义书签。
输出特性........................................................................... 错误!未定义书签。
爱惜功能........................................................................... 错误!未定义书签。
. 安规要求....................................................................................... 错误!未定义书签。
绝缘阻抗........................................................................... 错误!未定义书签。
绝缘耐压........................................................................... 错误!未定义书签。
lmr400技术参数
lmr400技术参数全文共四篇示例，供读者参考第一篇示例：LMR400技术参数主要是用于介绍这种通讯电缆的性能和规格，LMR400是一种常用的同轴电缆，广泛应用于通信、电视、微波通信等领域。
下面我们将详细介绍LMR400的技术参数。
首先是LMR400的规格，它的外径约为10.3mm，内径为7.24mm，导体为铜丝，绝缘体为发泡聚乙烯，外层包裹着一层PVC 或低烟无卤材料。
这种结构设计使得LMR400具有优异的抗干扰能力和传输性能。
其次是LMR400的电性能参数，它的工作频率范围广，从DC到6GHz都可以正常工作。
阻抗为50Ω，VSWR小于1.2。
在工作温度范围内，LMR400的传输损耗非常低，每米约为0.1dB。
这些参数保证了LMR400在长距离传输和高频传输时的稳定性和可靠性。
除了上述的基本参数外，LMR400还有其他一些值得关注的技术参数，比如温度范围。
LMR400可以在-40℃到+85℃的温度范围内正常工作，适应了各种恶劣环境下的使用需求。
LMR400的防水性能也非常优秀，外层材料可以有效防止水分的渗入，确保了通讯系统的稳定运行。
在实际应用中，LMR400还可以根据具体需求，定制不同规格的线缆，比如不同长度、不同接头类型等。
这种灵活的定制设计，使得LMR400更加适用于各种特殊场合的通信需求。
第二篇示例：LMR400是一种常用的电信通信用同轴电缆，具有优异的性能和可靠性，被广泛应用于无线通信系统、广播系统、雷达系统等领域。
下面我们来详细介绍一下LMR400的技术参数。
LMR400的规格参数如下：外径为10.29mm，内径为2.74mm，绝缘层厚度为4.83mm，外皮厚度为1.49mm，总直径为17.7mm。
这些参数保证了LMR400的稳定性和耐用性，使其在恶劣环境下也能保持良好的通信性能。
LMR400的电气性能也非常出色。
其额定阻抗为50欧姆，工作频率范围为DC至6GHz，插入损耗为3.2dB/100m，最大功率传输为157W。
英飞凌IGBT模块型号参数汇总表
FS6R06VE3_B2 FS10R06XL4 FS10R06VE3 FS10R06VE3_B2 FS10R06VL4_B2 FS15R06XE3 FS15R06XL4 FS15R06VE3 FS15R06VE3_B2 FS15R06VL4_B2 FS20R06W1E3
6A,600V@Tc=80℃,IGBT3,饱和压降1.45V 10A,600V@Tc=80℃,IGBT2 Low Loss,饱和 压降1.95V 10A,600V@Tc=80℃,IGBT3,饱和压降1.55V 10A,600V@Tc=80℃,IGBT3,饱和压降1.55V 10A,600V@Tc=80℃,IGBT2 Low Loss,饱和 压降1.95V 15A,600V@Tc=80℃,IGBT3,饱和压降1.55V 15A,600V@Tc=80℃,IGBT2 Low Loss,饱和 压降1.95V 15A,600V@Tc=80℃,IGBT3,饱和压降1.55V 15A,600V@Tc=80℃,IGBT3,饱和压降1.55V 15A,600V@Tc=80℃,IGBT2 Low Loss,饱和 压降1.95V
EasyPACK 750 EasyPACK 1B EasyPACK 750 EasyPACK 750 EasyPACK 750 EasyPACK 1B EasyPACK 1B EasyPACK 750 EasyPACK 750 EasyPACK 750
20A,600V@Tc=100℃,IGBT3,饱和压降1.55V EasyPACK 1B
20A,600V,@Tc=80℃,IGBT3,饱和压降1.55V EasyPACK 750 20A,600V@Tc=80℃,IGBT3,饱和压降1.55V 20A,600V@Tc=80℃,IGBT3,饱和压降1.55V EasyPACK 750 EasyPACK 750 EconoPACK 2B
开关电源驱动模块(PM40XXA) 说明书
开关电源驱动模块（PM40XXA）图1是为大功率开关电源设计的专业驱动模块，模块型号定义为：PM4020A和PM4060A两种，PM4020A最大驱动为（以MOS 管为例25A；MOS管）在应用驱动最老的MOS管是IRFP460内部电容大约6000P。
图2是PM4060A最大驱动能力为60A的MOS管或者IGBT管，两个电路图相同、不同的是所使用的驱动IC有区别，前面是使用的IR2101驱动IC、后面是使用IR2181驱动IC，两个驱动电路的脚列完全相同！可以直接代替使用。
上面两种模块的全部技术资料由（老铎）设计！所有出版在“电子制作网”上面。
并且由本网站提供完整的成品（如上图片）。
PM4020A每块30元；PM4060A每块 35元；具体订购方法请参考最后页。
采用该模块设计一个大功率1000W的开关电源是十分简单的事情，你不必花费更多的时间就可以完成，下面的设计是一个标准的开关电源电路图。
我们将连续出版模块的开发电路图和音响的开关电源，供爱好制作的朋友提供最大的方便。
电子制作网技术资料下载连接表凡是我们出版的制作技术资料的PDF文档，均在这里保留每个技术资料的PDF文档的连接。
发表技术问题到：我们的电子制作网 电子制作网提供关键套件 (电信站) (网通站)设计人：刘铎 实验人：老铎165v@ KA KB HOR VSRLOR DTHOL VSL LOL GND ISVCC 12345678910111213141516PIN16脚 标准单列直插全桥通用开关电源驱动模块IO GND 输入功率控制脉宽设置稳压控制（光耦K ）稳压控制（光耦A ）地右下驱动输出工作电压13V-18V输出电流控制(5V)右上驱动中点右上驱动输出地左下驱动输出左上驱动中点左上驱动输出工作频率 60KHz-80KHz-100KHz 误差2%最大能驱动65A 的MOS 管子VSL+HOL 和VSR+HOR 可工作在0V-600V如果没有特殊说明所有不同型号的半桥和半桥脚列相同及不同型号全桥和全桥脚列相同！不同型号半桥和半桥可以互相代换。
IPAM-4050 数字量非隔离输入输出模块 用户手册
5. 免责声明............................................................................................................ 24
产品用户手册
Quanzhou Jinjiang Airport Electronic Intelligent Technology Co.,Ltd
4. IPAM-4050 命令简析.......................................................................................... 18
4.1 MODBUS 协议命令........................................................................................................ 18 4.2 Custom-ASCII 协议命令解析......................................................................................... 19 4.3 Custom-ASCII 协议结构................................................................................................. 19 4.3.1 协议命令集.......................................................................................................... 19 4.3.2 公共命令集.......................................................................................................... 19 4.3.3 数字量输入输出模块命令集.............................................................................. 22
MBR4050PT中文资料
MBR4035PT THRU MBR4060PTSCHOTTKY RECTIFIERReverse Voltage -35 to 60 Volts Forward Current - 40.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0♦ Dual rectifier construction, positive center-tap ♦ Metal silicon rectifier,majority carrier conduction ♦ Low power loss,high efficiency♦ High current capability, low forward voltage drop ♦ High surge capability♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ Guardring for overvoltage protection ♦ High temperature soldering guaranteed:250°C/10 seconds, 0.17" (4.3mm) from caseMECHANICAL DATACase:JEDEC TO-247AD molded plastic body Terminals:Lead solderable per MIL-STD-750,Method 2026Polarity:As marked Mounting Position:AnyMounting Torque:10 in.- lbs.max.Weight:0.2 ounce, 5.6 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNITSMaximum repetitive peak reverse voltage V RRM 35455060Volts Maximum working peak reverse voltage V RMS 35455060Volts Maximum DC blocking voltageV DC 35455060Volts Maximum average forward rectified current at T C =125°CI (AV)40.0Amps Peak repetitive forward current per leg at T C =120°C (rated V R square wave, 20 KH Z )I FRM 40.0Amps Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)I FSM 400.0AmpsPeak repetitive reverse surge current (NOTE1)I RRM2.01.0AmpsMaximum instantaneous forward voltage per leg at I F =20A, T C =25°C0.700.72(NOTE 2)I F =20A, T C =125°C V F 0.600.62VoltsI F =40A, T C =25°C 0.80_I F =40A, T C =125°C 0.75_Maximum instantaneous reverse current at T C =25°C 1.0rated DC blocking voltage per leg (NOTE 2) T C =125°C I R 100.0mA Typical thermal resistance per leg (NOTE 3)R ΘJC 1.2°C/W Voltage rate of change (rated V R )dv/dt 10,000V/µs Operating junction temperature range T J -65 to +150°C Storage temperature rangeT STG-65 to +175°CNOTES:(1) 2.0µs pulse width, f=1.0 KH Z(2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case per leg4/981o REF.Dimensions in inches and (millimeters)TO-247AD0.010.11101000.111010050100150010********11010010020030040000.10.20.30.40.50.60.70.80.91.01.11.20.010.1110500.11101001001,0005,000204060801000.0010.010.111050RATINGS AND CHARACTERISTIC CURVES MBR4035PT THRU MBR4060PTT J =150°CFIG. 1 - FORWARD CURRENT DERATING CURVECASE TEMPERATURE, °CA V E R A G E F O R W A R D C U R R E N T ,A M P E R E SFIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENT PER LEGNUMBER OF CYCLES AT 60 H ZP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E SFIG. 3 - TYPICAL REVERSE CHARACTERISTICSPER LEGFIG. 4 - TYPICAL REVERSE CHARACTERISTICSPER LEGI N S T A N T A N E O U S F O R W A R D C U R R E N T , A M P E R E SI N S T A N T A N E O U S R E V E R S E C U R R E N T , M I L L I A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTSPERCENT OF RATED PEAK REVERSE VOLTAGE, %FIG. 5 - TYPICAL JUNCTION CAPACITANCE PER LEGJ U N C T I O N C A P A C I T A N C E , p FREVERSE VOLTAGE, VOLTST J =T J max.8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)RESISTIVE OR INDUCTIVE LOADT J =75°CT J =25°CT J =25°CPULSE WIDTH=300µs 1%DUTY CYCLET J =125°CFIG . 6 - TYPICAL TRANSIENT THERMAL IMPEDANCEPER LEGt, PULSE DURATION, sec.T R A N S I E N T T H E R M A L I M P E D A N C E , °C /WMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTMBR4035PT - MBR4045PT MBR4050PT & MBR4060PTT J =25°C f=1.0 MHz Vsig=50mVp-p。
IM03TS中文资料
IM RelayThe Best Rela ytionSlim line AND low profile2 pole telecom/signal relay, polarizedThrough Hole Types (THT), standard versionwith 5.08 mm, narrow version with 3.2 mm between the terminal rows orSurface Mount Type (SMT)Relay types:non-latching with 1 coil latching with 1 coilFeatures-Telecom/signal relay (dry circuit, test access, ringing)-Slim line10 x 6 mm, 0.39 x 0.24 inch -Low profile 5.65 mm, 0.222 inch -Minimum board-space 60 mm 2-Switching current 2 A- 2 changeover contacts (2 form C / DPDT)-Bifurcated contacts, gold plated-High sensitivity results in low nominal power consumption 140 mW for non latching 100 mW for latching version -High surge capability (1.2/50 µs and 10/700 µs) meets Bellcore GR 1089, FCC Part 68 and ITU-T K20³1500 V between open contacts ³ 2500 V between coil and contacts -High mechanical shock resistance up to 300 G functional up to 500 G survival Typical applications:-Communications equipmentLinecard application – analog, ISDN, xDSL,PABXVoice over IP -Office and business equipment -Measurement and control equipment -Consumer electronics Set top boxes, HiFi -Medical equipment Options:Surge capability ³ 2500 V between open contactsInsulation category:Supplementary insulation according IEC/EN 60950 and UL 1950Working voltage £ 300 Vrms Mains supply voltage SMT: 250 VrmsTHT: 200 VrmsRepetitive peak voltage 2500 V Pollution degree:External: 2Internal: 1Flammability classification:V-0Maximum operating temperature:85°CCSA-C22.2 No. 14-95 File No. 169679-1079886CSA-C22.2 No. 950-95UL 508 File No. E111441UL 1950 3rd ed.QC 160501-CH0001IEC/EN60950IEC Ref. Cert. No. 1176CECC 16501-003THT VersionMounting hole layoutView onto the component side of the PCB(top view)Terminal assignmentRelay - top view Non-latching type,not energized conditionDimensionsIM THT IM THT IM SMT IM SMT StandardNarrowGull WingsJ-Legsmminchmminch mminchL 10 ±0.080.393 ±0.00310 ±0.080.393 ±0.00310 ±0.080.393 ±0.00310 ±0.080.393 ±0.003W 6 ±0.080.236 ±0.0035.7 ±0.30.224 ±0.0126 ±0.080.236 ±0.0036 ±0.080.236 ±0.003H 5.65 -0.20.222 -0.008 5.85 -0.150.230 -0.0065.65 -0.20.222 -0.0085.65 -0.20.222 -0.008T 3.20.125 3.20.125N/A N/A N/AN/AT1N/AN/AN/A N/A 7.5 ±0.30.295 ±0.0112.8 ±0.20.110 ±0.007T2 5.08±0.10.200 ±0.0043.2±0.10.126 ±0.0065.08 ±0.10.200 ±0.0045.08 ±0.10.200 ±0.004D13.2 ±0.150.126 ±0.0063.2 ±0.150.126 ±0.0063.2 ±0.150.126 ±0.0063.2 ±0.150.126 ±0.006D22.2 ±0.150.087 ±0.0062.2 ±0.150.087 ±0.0062.2 ±0.150.087 ±0.0062.2 ±0.150.087 ±0.006Tw 0.40.0150.40.0150.40.0150.40.015S 0.3 ±0.050.011 ±0.0020.3 ±0.050.011 ±0.002N/AN/A N/AN/ASMT VersionGull WingsJ LegsSolder pad layoutView onto the component side of the PCB (top view)Gull WingsJ LegsLatching type, 1 coil reset conditionStandard versionNarrow versionStandard versionNarrow version1.5 1.13 3.40.1514016IM0032.1 6.80.3014064IM014.53.1510.30.45140145IM025 3.511.40.50140178IM0364.213.70.60140257IM049 6.320.40.90140574IM05128.427.3 1.201401028IM062416.845.62.402002880IM07non-latching 1 coillatching 1 coil1.5 1.13 4.1- 1.1310023IM4032.258.1- 2.2510090IM414.53.3812.1- 3.38100203IM425 3.7513.5- 3.75100250IM4364.516.2- 4.50100360IM449 6.7524.2- 6.75100810IM45129.0032.3- 9.001001440IM462418.0041.9- 18.002002880IM47Further coil versions are available on request.Ambient temperature t amb [°C]U I =Minimum voltage at 23° C after pre-energizing with nominal voltage without contact current U II =Maximum continous voltage at 23°The operating voltage limits U I and U II depend on the temperature according to the formula:U I tamb =K I · U I 23° Cand U II tamb =K Il · U Il 23° C t amb= Ambient temperatureU I tamb = Minimum voltage at ambient temperature, t amb U II tamb = Maximum voltage at ambient temperature, t ambk I , k II= Factors (dependent on temperature), see diagram* High Dielectric Version …C“All data refers to 23° C unless otherwise specified.Recommended soldering conditionsSoldering conditions according CECC 00802Vapor Phase Soldering: Temperature/Time Profile (Lead Temperature)Infrared Soldering: Temperature/Time Profile (Lead Temperature)Time (s)Time (s)T e m p e r a t u r e °CT e m p e r a t u r e °CPacking Dimensions in mm Tube for THT version - 50 relays per tube, 1000 relays per boxIM00GR3-1462037-7 IM00JR3-1462037-9 IM00TS3-1462037-5 IM00NS1-1462038-0 IM01GR0-1462037-1 IM01CGR0-1462038-4 IM01JR4-1462037-0 IM01TS0-1462037-4 IM01NS1-1462038-1 IM02GR0-1462037-9 IM02CGR0-1462038-1 IM02JR1-1462037-1 IM02TS1-1462037-3 IM02NS1-1462038-2 IM03GR1-1462037-4 IM03CGR0-1462038-2 IM03JR1-1462037-6 IM03TS1-1462037-8 IM03NS1-1462038-3 IM04GR4-1462037-2 IM04JR4-1462037-4 IM04TS4-1462037-1 IM04NS1-1462038-4 IM05GR3-1462037-4 IM05CGR0-1462038-3 IM05JR4-1462037-5 IM05TS2-1462037-2 IM05NS1-1462038-5 IM06GR2-1462037-3 IM06CGR9-1462037-9 IM06JR4-1462037-6 IM06TS2-1462037-7 IM06NS1-1462038-6 IM07GR4-1462037-7 IM07JR4-1462037-8IM07TS3-1462037-0 IM07NS1-1462038-7 IM40GR5-1462037-1 IM40JR5-1462037-2 IM40TS5-1462037-0 IM40NS1-1462038-8 IM41GR5-1462037-4 IM41JR5-1462037-5 IM41TS5-1462037-3 IM41NS1-1462038-9 IM42GR3-1462037-1 IM42JR5-1462037-7 IM42TS5-1462037-6 IM42NS2-1462038-0 IM43GR5-1462037-9 IM43JR6-1462037-0 IM43TS5-1462037-8 IM43NS2-1462038-1 IM44GR6-1462037-2 IM44JR6-1462037-3 IM44TS6-1462037-1 IM44NS2-1462038-2 IM45GR6-1462037-4 IM45JR6-1462037-5 IM45TS3-1462037-2 IM45NS2-1462038-3 IM46GR6-1462037-7 IM46JR6-1462037-8 IM46TS6-1462037-6 IM46NS2-1462038-4 IM47GR7-1462037-0 IM47JR7-1462037-1 IM47TS6-1462037-9 IM47NS2-1462038-5Relay Code TycoPart Number Relay Code TycoPart NumberOrdering InformationIM Relays4th generation slim line – low profile polarized 2 c/o telecom relay with bifurcated contacts, available as non latching or latching relay with1 coil. Nominal voltage range from 1.5... 24 V, coil power consumption of 140... 200 mW, latching relays with 1 coil 100 mW. The IM relay is available as through hole and surface mount type (J-Legs and Gull Wings) and capable to switch loads up to 60 W/62,5 VA. Dielectric strength fulfills the Bellcore requirements according GR 1089 (2,5 kV –2 / 10 µs) and FCC part 68 (1,5 kV – 10 / 160 µs). The IM is CECC/ IECQ approved and certified in accordance with IEC/EN 60950 and UL1950. Dimensions approx. 10 x 6 mm board space and 5.65 mm height.P2 Relays3rd generation polarized 2 c/o telecom relay with bifurcated contacts, available as non latching or latching relay with 1 or 2 coils. Nominal voltage range from 3 ... 24 V, coil power consumption 140 mW, latching relays with 1 coil 70 mW. The P2 relay is available as through hole or surface mount type and capable to switch currents up to 5 A. Dielectric strength fulfills the Bellcore requirements according GR 1089 (2,5 kV – 2 / 10 µs) and FCC part 68 (1,5 kV – 10 / 160 µs). Dimensions approx. 15 x 7,5 mm board space and 10 mm height.FX Relays3rd generation polarized 2 c/o telecom relay with bifurcated contacts, available as non latching or latching relay with 1 coil. Nominal voltage range from 3 ... 48 V, coil power consumption of 80 ... 260 mW for the high sensitive version, 140... 300 mW for the standard version, latching relays with 1 coil 100 mW. The FX2 relay is available as through hole type and capable to switch loads up to 60 W/62,5 VA. Dielectric strength fulfills the Bellcore requirements according GR 1089 (2,5 kV – 2 / 10 µs) and FCC part 68 (1,5 kV – 10 / 160 µs). The FX2 is CECC/IECQ approved and certified in accordance with IEC/EN 60950 and UL1950. Dimensions approx. 15 x 7,5 mm board space and 10,7 mm height.FT2 / FU2 Relays3rd generation non polarized, non latching 2 c/o telecom relay with bifurcated contacts. Nominal voltage range from 3 ... 48 V, coil power consumption 200 ... 300 mW. Most sensitive 48 V relay. Available as through hole and surface mount type. Dielectric strength fulfills the Bellcore requirements according GR 1089 (2,5 kV – 2 / 10 µs) and FCC part 68 (1,5 kV – 10 / 160 µs). The FT2/FU2 is CECC/IECQ approved and certified in accordance with IEC/EN 60950 andUL1950. Dimensions approx. 15 x 7,5 mm board space and 10 mm height.FP2 Relays3rd generation polarized 2 c/o telecom relay with bifurcated contacts, available as non latching or latching relay with 1 or 2 coils. Nominal voltage range from 3 ... 48 V, coil power consumption of 80 ...260 mW for the high sensitive version, 140... 300 mW for the standard version, latching relays with 1 coil 100 mW.. The FP2 relay is available as through hole type and capable to switch loads up to30 W/62,5 VA. Dielectric strength fulfills FCC part 68 (1,5 kV – 10 / 160 µs). The FP2 is CECC/IECQ approved. Dimensions approx.14 x 9 mm board space and 5 mm height.MT2 / MT42nd generation non polarized, non latching 2 c/o and 4 c/o telecom and signal relay with bifurcated contacts. Nominal voltage range from 4.5 ... 48 V, coil power consumption 150/200/300/400 and550 mW, and 300 mW (MT4). Dielectric strength fulfills the requirements according FCC part 68 (1,5 kV – 10 / 160 µs) for both and the Bellcore requirements according GR 1089 (2,5 kV – 2 / 10 µs) the MT4 only.Dimensions MT2 approx. 20 x 10 mm board space and 11 mm height, MT4 approx. 20 x15 mm board space and 11 mm height.D2n Relays2nd generation non polarized 2 c/o relay for telecom and various other applications. Nominal voltage range from 3 ... 48 V, coil power consumption from 150 .... 500 mW. The D2n relay is capable to switch currents up to 3 A. Dielectric strength fulfills the requirements according FCC part 68 (1,5 kV – 10 / 160 µs). Dimensions approx.20 x10 mm board space and 11,5 mm height.P1 RelaysExtremely sensitive, polarized 1 c/o relay with bifurcated contacts for a wide range of applications, available as non latching or latching relay with 1 or 2 coils. Nominal voltage range from 3 ... 24 V, coil power consumption 65 mW, latching relays with 1 coil 30 mW. The P1 relay is available as through hole or surface mount type and capable to switch currents up to 1 A. Dielectric strength fulfills the requirements according FCC part 68 (1,5 kV – 10 / 160 µs). Dimensions approx.13 x 7,6 mm board space and 7 mm height for THT or 8 mm height for SMT version.W11 RelaysLow cost, non polarized 1 c/o relay for various applications. Nominal voltage range from 3 ... 24 V, coil power consumption 450 mW, sensitive versions 200 mW. The W11 relay is capable to switch currents up to 3 A. Dielectric strength 1000 Vrms. Dimensions approx. 15,6 x 10,6 mm board space and 11,5 mm height.Reed RelaysHigh sensitive, non polarized relay for telecom and various other applications, available with 1 n/o, 2 n/o or 1c/o contacts. Nominal voltage range from 5 ... 24 V, coil power consumption 50...280 mW for 1 n/o and 125 ... 280 mW for 2 n/o or 1 c/o versions. Reedrelays are available in DIP or SIL housing and capable to switch currents up to 0,5 A. Integrated diode and/or electrostatic shield optional. Dielectric strength 1500 Vdc. Dimensions approx. 19,3 x 7 mm board space and 5 ... 7,5 mm height for DIP or 19,8 x 5 mm board space and 7,8 mm height for SIL version.Cradle RelaysExtremely reliable and mature relay family of 1st generation for various signal switching applications. Available as non polarized, polarized / latching and relay with AC coil. The benefit is the possibility of combining various contact sets from 1 up to 6 poles, single and bifurcated contacts, different contact materials with a coil voltage range from 1,5 Vdc to 220 Vac. Cradle relays are available as dust protected and hermetically sealed versions, with plug in or solder terminals and are capable to switch currents up to 5 A. Forcibly guided (linked) contact sets optional. Dielectric strength 500 Vrms. Dimensions from approx. 19 x 24 to 19x35 mm board space and30 mm height.Other RelaysWe offer a variety of different relay families for maintenance and replacement purposes. These relays are up to 60 years old now, such as Card Relay SN (V23030 / V23031 series), Small General Purpose Relay (V23006 series), Small Polarized Relay (V23063 ... V23067 and V23163 ... V23167 series). Accessories like sockets, hold down springs, etc. optional.Tyco Electronics AXICOM Ltd.Seestrasse 295 - P.O. Box 220CH-8804 Au-Wädenswil / Switzerland Phone +41 1 782 9111Fax +41 1 782 9080E-mail: axicom@Tyco Electronics Corporation POB 3608,Harrisburg, PA 17105, USA Phone +1 800-522-6752Tyco Electronics EC Trutnov s.r.o.Komenského 821CZ-541 01 Trutnov / Czech Republic E-mail: axicom@Tyco Electronics AMP GmbH Paulsternstrasse 26D-13629 Berlin / Germany Phone +49 30 386 38260Fax +49 30 386 38569E-mail: axicom@A p r i l 2002R e v . 3.01。
P340技术说明书
上海 AREVA 电力自动化有限公司 MiCOM P34x 系列
第 8 页 共 10 页 技术说明书
2.1.4 2.1.5
频率
标准频率是 50 – 60 赫兹的二相额定值，频率的操作范围为 5 赫兹– 70 赫兹。 逻辑输入
所有的逻辑输入是独立和电隔离的. 额定
范围
逻辑 “off” 逻辑“on” 逻辑“on” 逻辑“on”
选型及设计
选型指南 设计指南 安装尺寸 典型设计参考
硬件结构
原理及应用
保护原理
第2页共4页 技术说明书
10 11 11 11 12 12 12 13 13 13 13 13 14 14 14 14 14 14 14 14
15
15 16 16 16
18 20
20
上海 AREVA 电力自动化有限公司 MiCOM P34x 系列
6.
就地和远程通讯
6.1 6.2 6.2.1 6.2.2 6.2.3 6.2.4
就地通讯 远程通讯 Courier/K 总线 Modbus IEC 60870-5-103 DNP 3.0
7.
定值及整定说明
第- 3 -页/共 5 页 技术说明书
20 22 22 22 23 23 24 24 24 25 25 25 26 27 27 27 27 27 27 28 28 29 29
2.2.4
每一个额外的光电输入 每一个额外的输出继电器 光隔离输入信号
<0.15 VA <0.2VA
<0.06VA 有效值 在 110V 时 <0.06VA 有效值 在 440V 时
最小* 11W 或 24 VA 11W 或 24 VA
0.26W 或 0.35VA 0.55W 或 0.70VA
英飞凌IGBT参数中文版
电压参数
集电极-发射极阻断电压Vces
测量Vces时，G/E两极必须短路 Vces为IGBT模块所能承受的最大电压，在任 何时候CE间电压都不能超过这一数值，否则将 造成去器件击穿损坏 Vces和短路电流ISC 一起构成了IGBT模块的安 全工作区：RBSOA图
英飞凌IGBT模块规格的正确理解
王浩
正确理解规格书
电流参数 电压参数 开关参数 二极管参数 热学参数
以 FF450R17ME3 为例
电流参数
额定电流（IC nom ）
内部是3个150A芯片并联，所以标称值为450A 可以用以下公式估算： Tjmax –TC = VCEsat· IC nom · RthJC
热学参数
瞬态热阻抗(ZthJC)
瞬态热阻抗用来计算瞬时结温Tj
我们把芯片的瞬态热阻抗模型分为四个部分，每部分用一个表达式表示。四部 分的系数在规格书中列出。
Z th, RCi Rth,i (1 e
t
i
)
Z thJC Z th, RC1 Z th, RC 2 Z th, RC 3 Zth, RC 4
Erec Erec _ nom *
IC
I C _ nom VR _ test
*
VR
二极管参数
二极管 SOA
高压模块定义了二极管的安全工作区(SOA)，不仅是峰值电 流和电压，还包括峰值功率。瞬时峰值功率一定不能超过安 全工作区曲线限定的最大值。
3000
VR [500 V/div ] IR [500A /div ]
P Qg VGE f
LM4050AEM3-2.5中文资料
LM4050Precision Micropower Shunt Voltage ReferenceGeneral DescriptionIdeal for space critical applications,the LM4050precision voltage reference is available in the sub-miniature (3mm x 1.3mm)SOT-23surface-mount package.The LM4050’s de-sign eliminates the need for an external stabilizing capacitor while ensuring stability with any capacitive load,thus making the LM4050easy to use.Further reducing design effort is the availability of several fixed reverse breakdown voltages:2.048V,2.500V,4.096V,5.000V,8.192V,and 10.000V.The minimum operating current increases from 60µA for the LM4050-2.0to 100µA for the LM4050-10.0.All versions have a maximum operating current of 15mA.The LM4050utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime parts have an accuracy of better than ±0.1%(A grade)at 25˚C.Bandgap reference temperature drift curvature correction and low dynamic impedance ensure stable reverse break-down voltage accuracy over a wide range of operating tem-peratures and currents.All grades and voltage options of the LM4050are available in both an industrial temperature range (−40˚C and +85˚C)and an extended temperature range (−40˚C and +125˚C).Featuresn Small packages:SOT-23n No output capacitor requiredn Tolerates capacitive loadsn Fixed reverse breakdown voltages of 2.048V,2.500V,4.096V,5.000V,8.192V,and 10.000VKey Specifications (LM4050-2.5)j Output voltage tolerance(A grade,25˚C)±0.1%(max)j Low output noise(10Hz to 10kHz)41µV rms (typ)j Wide operating current range 60µA to 15mA j Industrial temperature range −40˚C to +85˚C j Extended temperature range −40˚C to +125˚C j Low temperature coefficient50ppm/˚C (max)Applicationsn Portable,Battery-Powered Equipment n Data Acquisition Systems n Instrumentation n Process Controln Energy Management n Product Testing n AutomotivenPrecision Audio ComponentsConnection DiagramSOT-2310104501*This pin must be left floating or connected to pin 2.Top ViewSee NS Package Number MF03AJuly 2004LM4050Precision Micropower Shunt Voltage Reference©2004National Semiconductor Corporation Ordering InformationIndustrial Temperature Range (−40˚C to +85˚C)Reverse BreakdownVoltage Tolerance at 25˚C and AverageReverse BreakdownVoltage Temperature CoefficientLM4050Supplied as 1000Units,Tape and ReelLM4050Supplied as 3000Units,Tape and ReelLM4050AIM3-2.0LM4050AIM3X-2.0±0.1%,50ppm/˚C max (A grade)LM4050AIM3-2.5LM4050AIM3X-2.5LM4050AIM3-4.1LM4050AIM3X-4.1LM4050AIM3-5.0LM4050AIM3X-5.0LM4050AIM3-8.2LM4050AIM3X-8.2LM4050AIM3-10LM4050AIM3X-10LM4050BIM3-2.0LM4050BIM3X-2.0±0.2%,50ppm/˚C max (B grade)LM4050BIM3-2.5LM4050BIM3X-2.5LM4050BIM3-4.1LM4050BIM3X-4.1LM4050BIM3-5.0LM4050BIM3X-5.0LM4050BIM3-8.2LM4050BIM3X-8.2LM4050BIM3-10LM4050BIM3X-10LM4050CIM3-2.0LM4050CIM3X-2.0±0.5%,50ppm/˚C max (C grade)LM4050CIM3-2.5LM4050CIM3X-2.5LM4050CIM3-4.1LM4050CIM3X-4.1LM4050CIM3-5.0LM4050CIM3X-5.0LM4050CIM3-8.2LM4050CIM3X-8.2LM4050CIM3-10LM4050CIM3X-10Extended Temperature Range (−40˚C to +125˚C)Reverse BreakdownVoltage Tolerance at 25˚C and AverageReverse BreakdownVoltage Temperature CoefficientLM4050Supplied as 1000Units,Tape and ReelLM4050Supplied as 3000Units,Tape and ReelLM4050AEM3-2.0LM4050AEM3X-2.0±0.1%,50ppm/˚C max (A grade)LM4050AEM3-2.5LM4050AEM3X-2.5LM4050AEM3-4.1LM4050AEM3X-4.1LM4050AEM3-5.0LM4050AEM3X-5.0LM4050AEM3-8.2LM4050AEM3X-8.2LM4050AEM3-10LM4050AEM3X-10LM4050BEM3-2.0LM4050BEM3X-2.0±0.2%,50ppm/˚C max (B grade)LM4050BEM3-2.5LM4050BEM3X-2.5LM4050BEM3-4.1LM4050BEM3X-4.1LM4050BEM3-5.0LM4050BEM3X-5.0LM4050BEM3-8.2LM4050BEM3X-8.2LM4050BEM3-10LM4050BEM3X-10LM4050CEM3-2.0LM4050CEM3X-2.0±0.5%,50ppm/˚C max (C grade)LM4050CEM3-2.5LM4050CEM3X-2.5LM4050CEM3-4.1LM4050CEM3X-4.1LM4050CEM3-5.0LM4050CEM3X-5.0LM4050CEM3-8.2LM4050CEM3X-8.2LM4050CEM3-10LM4050CEM3X-10L M 4050 2LM4050 SOT-23Package Marking InformationOnly three fields of marking are possible on the SOT-23’s small surface.This table gives the meaning of the three fields.Part Marking Field DefinitionRCA First Field:RDA R=ReferenceREA Second Field:RFA N=2.048V Voltage OptionRGA C=2.500V Voltage OptionRNA D=4.096V Voltage OptionRCB E=5.000V Voltage OptionRDB F=8.192V Voltage OptionREB G=10.000V Voltage OptionRFBRGB Third Field:RNBRCC A–C=Initial Reverse Breakdown Voltage or Reference Voltage ToleranceRDC A=±0.1%,B=±0.2%,C=+0.5%,RECRFCRGCRNC3Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Reverse Current 20mA Forward Current10mAPower Dissipation (T A =25˚C)(Note 2)M3Package 280mWStorage Temperature −65˚C to +150˚CLead Temperature M3PackageVapor phase (60seconds)+215˚C Infrared (15seconds)+220˚C ESD SusceptibilityHuman Body Model (Note 3)2kV Machine Model (Note 3)200V See AN-450“Surface Mounting Methods and Their Effect on Product Reliability”for other methods of soldering surface mount devices.Operating Ratings (Note 2)Temperature Range (T min ≤T A ≤T max )Industrial Temperature Range−40˚C ≤T A ≤+85˚C Extended temperature Range−40˚C ≤T A ≤+125˚CReverse Current LM4050-2.060µA to 15mA LM4050-2.560µA to 15mA LM4050-4.168µA to 15mA LM4050-5.074µA to 15mA LM4050-8.291µA to 15mA LM4050-10.0100µA to 15mA LM4050-2.0Electrical CharacteristicsBoldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,±0.2%,and 0.5%respectively.Symbol ParameterConditionsTypical (Note 4)LM4050AIM3LM4050AEM3Limits (Note 5)LM4050BIM3LM4050BEM3Limits (Note 5)LM4050CIM3LM4050CEM3Limits (Note 5)Units (Limit)V RReverse Breakdown Voltage I R =100µA 2.048VReverse Breakdown Voltage Tolerance (Note 6)I R =100µA±2.048±4.096±10.24mV (max)Industrial Temp.Range ±9.0112±11.4688±14.7456mV (max)Extended Temp.Range±12.288±14.7456±17.2032mV (max)I RMINMinimum Operating Current41µA 606060µA (max)656565µA (max)∆V R /∆TAverage Reverse Breakdown Voltage Temperature Coefficient (Note 6)I R =10mA ±20ppm/˚C I R =1mA ±15ppm/˚CI R =100µA±15±50±50±50ppm/˚C (max)∆V R /∆I RReverse Breakdown Voltage Change with Operating Current Change (Note 7)I RMIN ≤I R ≤1mA0.3mV 0.80.80.8mV (max)1.21.2 1.2mV (max)1mA ≤I R ≤15mA2.3mV 6.0 6.0 6.0mV (max)8.08.08.0mV (max)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,I AC =0.1I R 0.3Ωe N Wideband NoiseI R =100µA 34µV rms10Hz ≤f ≤10kHz ∆V R Reverse Breakdown Voltage Long Term Stability t =1000hrsT =25˚C ±0.1˚C I R =100µA120ppm V HYSTThermal Hysteresis (Note 8)∆T =−40˚C to 125˚C0.7mVL M 4050 4LM4050-2.5Electrical CharacteristicsBoldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of±0.1%,±0.2%,and0.5%respectively.Symbol Parameter Conditions Typical(Note4)LM4050AIM3LM4050AEM3Limits(Note5)LM4050BIM3LM4050BEM3Limits(Note5)LM4050CIM3LM4050CEM3Limits(Note5)Units(Limit)V R Reverse Breakdown Voltage I R=100µA 2.500VReverse Breakdown Voltage Tolerance(Note6)I R=100µA±2.5±5.0±13mV(max) Industrial Temp.Range±11±14±21mV(max) Extended Temp.Range±15±18±25mV(max)I RMIN Minimum Operating Current41µA606060µA(max)656565µA(max)∆V R/∆T Average Reverse BreakdownVoltage Temperature Coefficient(Note6)I R=10mA±20ppm/˚CI R=1mA±15ppm/˚CI R=100µA±15±50±50±50ppm/˚C(max)∆V R/∆I R Reverse Breakdown VoltageChange with Operating CurrentChange(Note7)I RMIN≤I R≤1mA0.3mV0.80.80.8mV(max)1.2 1.2 1.2mV(max) 1mA≤I R≤15mA2.3mV6.0 6.0 6.0mV(max)8.08.08.0mV(max)Z R Reverse Dynamic Impedance I R=1mA,f=120Hz,I AC=0.1I R0.3Ωe N Wideband Noise I R=100µA41µV rms10Hz≤f≤10kHz∆V R Reverse Breakdown VoltageLong Term Stability t=1000hrsT=25˚C±0.1˚CI R=100µA120ppmV HYST Thermal Hysteresis(Note8)∆T=−40˚C to125˚C0.7mVLM4050-4.1Electrical CharacteristicsBoldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of±0.1%,±0.2%,and0.5%respectively.Symbol Parameter Conditions Typical(Note4)LM4050AIM3LM4050AEM3Limits(Note5)LM4050BIM3LM4050BEM3Limits(Note5)LM4050CIM3LM4050CEM3Limits(Note5)Units(Limit)V R Reverse Breakdown Voltage I R=100µA 4.096VReverse Breakdown Voltage Tolerance(Note6)I R=100µA±4.1±8.2±21mV(max) Industrial Temp.Range±18±22±34mV(max) Extended Temp.Range±25±29±41mV(max)I RMIN Minimum Operating Current52µA686868µA(max)Industrial Temp.Range737373µA(max)Extended Temp.Range787878µA(max)∆V R/∆T Average Reverse BreakdownVoltage Temperature Coefficient(Note6)I R=10mA±30ppm/˚CI R=1mA±20ppm/˚CI R=100µA±20±50±50±50ppm/˚C(max)∆V R/∆I R Reverse Breakdown VoltageChange with Operating CurrentChange(Note7)I RMIN≤I R≤1mA0.2mV0.90.90.9mV(max)1.2 1.2 1.2mV(max)1mA≤I R≤15mA 2.0mV7.07.07.0mV(max)10.010.010.0mV(max)LM40505LM4050-4.1Electrical Characteristics(Continued)Boldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,±0.2%,and 0.5%respectively.Symbol ParameterConditionsTypical (Note 4)LM4050AIM3LM4050AEM3Limits (Note 5)LM4050BIM3LM4050BEM3Limits (Note 5)LM4050CIM3LM4050CEM3Limits (Note 5)Units(Limit)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,0.5ΩI AC =0.1I R e N Wideband NoiseI R =100µA 93µV rms10Hz ≤f ≤10kHz ∆V R Reverse Breakdown Voltage Long Term Stability t =1000hrsT =25˚C ±0.1˚C I R =100µA120ppm V HYSTThermal Hysteresis (Note 8)∆T =−40˚C to 125˚C1.148mVLM4050-5.0Electrical CharacteristicsBoldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%,±0.2%and 0.5%respectively.Symbol ParameterConditionsTypical (Note 4)LM4050AIM3LM4050AEM3Limits (Note 5)LM4050BIM3LM4050BEM3Limits (Note 5)LM4050CIM3LM4050CEM3Limits (Note 5)Units(Limit)V RReverse Breakdown Voltage I R =100µA 5.000VReverse Breakdown Voltage Tolerance (Note 6)I R =100µA±5.0±10±25mV (max)Industrial Temp.Range ±22±27±42mV (max)Extended Temp.Range±30±35±50mV (max)I RMINMinimum Operating Current56µA 747474µA (max)Industrial Temp.Range 808080µA (max)Extended Temp.Range909090µA (max)∆V R /∆TAverage Reverse Breakdown Voltage Temperature Coefficient (Note 6)I R =10mA ±30ppm/˚C I R =1mA ±20ppm/˚CI R =100µA±20±50±50±50ppm/˚C (max)∆V R /∆I RReverse Breakdown Voltage Change with Operating Current Change (Note 7)I RMIN ≤I R ≤1mA0.2mV 1.0 1.0 1.0mV (max)1.41.4 1.4mV (max)1mA ≤I R ≤15mA2.0mV 8.08.08.0mV (max)12.012.012.0mV (max)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,0.5ΩI AC =0.1I R Ω(max)e N Wideband NoiseI R =100µA 93µV rms10Hz ≤f ≤10kHz ∆V RReverse Breakdown Voltage Long Term Stabilityt =1000hrs T =25˚C ±0.1˚C 120ppmI R =100µAV HYSTThermal Hysteresis (Note 8)∆T =−40˚C to 125˚C1.4mVL M 4050 6LM4050-8.2Electrical CharacteristicsBoldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of±0.1%and±0.2%and0.5%respectively.Symbol Parameter Conditions Typical(Note4)LM4050AIM3LM4050AEM3Limits(Note5)LM4050BIM3LM4050BEM3Limits(Note5)LM4050CIM3LM4050CEM3Limits(Note5)Units(Limit)V R Reverse Breakdown Voltage I R=150µA8.192VReverse Breakdown Voltage Tolerance(Note6)I R=150µA±8.2±16±41mV(max) Industrial Temp.Range±35±43±68mV(max) Extended Temp.Range±49±57±82mV(max)I RMIN Minimum Operating Current74µA919191µA(max)Industrial Temp.Range959595µA(max)Extended Temp.Range100100100µA(max)∆V R/∆T Average Reverse BreakdownVoltage Temperature Coefficient(Note6)I R=10mA±40ppm/˚CI R=1mA±20ppm/˚CI R=150µA±20±50±50±50ppm/˚C(max)∆V R/∆I R Reverse Breakdown VoltageChange with Operating CurrentChange(Note7)I RMIN≤I R≤1mA0.6mV1.3 1.3 1.3mV(max)2.5 2.5 2.5mV(max) 1mA≤I R≤15mA7.0mV10.010.010.0mV(max)18.018.018.0mV(max)Z R Reverse Dynamic Impedance I R=1mA,f=120Hz,0.6ΩI AC=0.1I Re N Wideband Noise I R=150µA150µV rms10Hz≤f≤10kHz∆V R Reverse Breakdown VoltageLong Term Stability t=1000hrsT=25˚C±0.1˚C120ppm I R=150µAV HYST Thermal Hysteresis(Note8)∆T=−40˚C to125˚C 2.3mVLM40507LM4050-10.0Electrical CharacteristicsBoldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Reverse Breakdown Voltage tolerances of ±0.1%and ±0.2%and 0.5%respectively.Symbol ParameterConditionsTypical (Note 4)LM4050AIM3LM4050AEM3Limits (Note 5)LM4050BIM3LM4050BEM3Limits (Note 5)LM4050CIM3LM4050CEM3Limits (Note 5)Units(Limit)V RReverse Breakdown Voltage I R =150µA 10.00VReverse Breakdown Voltage Tolerance (Note 6)I R =150µA±10±20±50mV (max)Industrial Temp.Range ±43±53±83mV (max)Extended Temp.Range±60±70±100mV (max)I RMINMinimum Operating Current80µA 100100100µA (max)Industrial Temp.Range 103103103µA (max)Extended Temp.Range110110110µA (max)∆V R /∆TAverage Reverse Breakdown Voltage Temperature Coefficient (Note 6)I R =10mA ±40ppm/˚C I R =1mA ±20ppm/˚CI R =150µA±20±50±50±50ppm/˚C (max)∆V R /∆I RReverse Breakdown Voltage Change with Operating Current Change (Note 7)I RMIN ≤I R ≤1mA0.8mV 1.5 1.5 1.5mV (max)3.53.5 3.5mV (max)1mA ≤I R ≤15mA 8.0mV 12.012.012.0mV (max)23.023.023.0mV (max)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,0.7ΩI AC =0.1I R e N Wideband NoiseI R =150µA 150µV rms10Hz ≤f ≤10kHz ∆V RReverse Breakdown Voltage Long Term Stabilityt =1000hrs T =25˚C ±0.1˚C 120ppmI R =150µAV HYSTThermal Hysteresis (Note 8)∆T =−40˚C to 125˚C2.8mVNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is functional,but do not guarantee specific performance limits.For guaranteed specifications and test conditions,see the Electrical Characteristics.The guaranteed specifications apply only for the test conditions listed.Some performance characteristics may degrade when the device is not operated under the listed test conditions.Note 2:The maximum power dissipation must be derated at elevated temperatures and is dictated by T Jmax (maximum junction temperature),θJA (junction to ambient thermal resistance),and T A (ambient temperature).The maximum allowable power dissipation at any temperature is PD max =(T Jmax −T A )/θJA or the number given in the Absolute Maximum Ratings,whichever is lower.For the LM4050,T Jmax =125˚C,and the typical thermal resistance (θJA ),when board mounted,is 326˚C/W for the SOT-23package.Note 3:The human body model is a 100pF capacitor discharged through a 1.5k Ωresistor into each pin.The machine model is a 200pF capacitor discharged directly into each pin.Note 4:Typicals are at T J =25˚C and represent most likely parametric norm.Note 5:Limits are 100%production tested at 25˚C.Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC)methods.The limits are used to calculate National’s AOQL.Note 6:The boldface (over-temperature)limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(∆V R /∆T)(max ∆T)(V R )].Where,∆V R /∆T is the V R temperature coefficient,max ∆T is the maximum difference in temperature from the reference point of 25˚C to T MIN or T MAX ,and V R is the reverse breakdown voltage.The total over-temperature tolerance for the different grades in the industrial temperature range where max ∆T =65˚C is shown below:A-grade:±0.425%=±0.1%±50ppm/˚C x 65˚C B-grade:±0.525%=±0.2%±50ppm/˚C x 65˚C C-grade:±0.825%=±0.5%±50ppm/˚C x 65˚CTherefore,as an example,the A-grade LM4050-2.5has an over-temperature Reverse Breakdown Voltage tolerance of ±2.5V x 0.425%=±11mV.Note 7:Load regulation is measured on pulse basis from no load to the specified load current.Output changes due to die temperature change must be taken into account separately.Note 8:Thermal hysteresis is defined as the difference in voltage measured at +25˚C after cycling to temperature -40˚C and the 25˚C measurement after cycling to temperature +125˚C.L M 4050 8Typical Performance CharacteristicsOutput Impedance vs FrequencyOutput Impedance vs Frequency1010451010104511Reverse Characteristics and Minimum Operating CurrentNoise Voltage vs Frequency1010451210104513Thermal Hysteresis10104529LM40509Start-Up Characteristics10104505LM4050-2.5R S=30k10104507LM4050-5.0R S=30k10104508LM4050-10.0R S=30k10104509 LM4510Functional Block Diagram10104514Applications InformationThe LM4050is a precision micro-power curvature-corrected bandgap shunt voltage reference.For space critical applica-tions,the LM4050is available in the sub-miniature SOT-23surface-mount package.The LM4050has been designed for stable operation without the need of an external capacitor connected between the “+”pin and the “−”pin.If,however,a bypass capacitor is used,the LM4050remains stable.Re-ducing design effort is the availability of several fixed reverse breakdown voltages: 2.048V, 2.500V, 4.096V, 5.000V,8.192V,and 10.000V.The minimum operating current in-creases from 60µA for the LM4050-2.0to 100µA for the LM4050-10.0.All versions have a maximum operating cur-rent of 15mA.LM4050s in the SOT-23packages have a parasitic Schottky diode between pin 2(−)and pin 3(Die attach interface contact).Therefore,pin 3of the SOT-23package must be left floating or connected to pin 2.The 4.096V version allows single +5V 12-bit ADCs or DACs to operate with an LSB equal to 1mV.For 12-bit ADCs or DACs that operate on supplies of 10V or greater,the 8.192V version gives 2mV per LSB.The typical thermal hysteresis specification is defined as the change in +25˚C voltage measured after thermal cycling.The device is thermal cycled to temperature -40˚C and then measured at 25˚C.Next the device is thermal cycled totemperature +125˚C and again measured at 25˚C.The re-sulting V OUT delta shift between the 25˚C measurements is thermal hysteresis.Thermal hysteresis is common in preci-sion references and is induced by thermal-mechanical pack-age stress.Changes in environmental storage temperature,operating temperature and board mounting temperature are all factors that can contribute to thermal hysteresis.In a conventional shunt regulator application (Figure 1),an external series resistor (R S )is connected between the sup-ply voltage and the LM4050.R S determines the current that flows through the load (I L )and the LM4050(I Q ).Since load current and supply voltage may vary,R S should be small enough to supply at least the maximum guaranteed I RMIN (spec.table)to the LM4050even when the supply voltage is at its minimum and the load current is at its maximum value.When the supply voltage is at its maximum and I L is at its minimum,R S should be large enough so that the current flowing through the LM4050is less than 15mA.R S is determined by the supply voltage,(V S ),the load and operating current,(I L and I Q ),and the LM4050’s reverse breakdown voltage,V R .Typical Applications10104515FIGURE 1.Shunt RegulatorLM405011Typical Applications(Continued)10104516**Ceramic monolithic *TantalumFIGURE 2.LM4050-4.1’s Nominal 4.096breakdown voltage gives ADC124511mV/LSBL M 4050 12Typical Applications(Continued)10104517FIGURE 3.Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.Nominal clamping voltage is ±11.5V (LM4050’s reverse breakdown voltage +2diode V F ).10104518FIGURE 4.Protecting Op Amp input.The bounding voltage is ±4V with the LM4050-2.5(LM4050’s reverse breakdown voltage +3diode V F ).LM405013Typical Applications(Continued)10104519FIGURE 5.Precision ±4.096V Reference1010452110104522FIGURE 6.Precision 1µA to 1mA Current SourcesL M 4050 14Physical Dimensionsinches (millimeters)unless otherwise notedPlastic Surface Mount Package (M3)NS Package Number MF03A (JEDEC Registration TO-236AB)LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user. 2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.BANNED SUBSTANCE COMPLIANCENational Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2)and the Banned Substances and Materials of Interest Specification (CSP-9-111S2)and contain no ‘‘Banned Substances’’as defined in CSP-9-111S2.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560LM4050Precision Micropower Shunt Voltage ReferenceNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。
ED303T资料
Fig.1- FORWARD CURRENT DERATING CURVE
Fig.2- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTIC
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
1000 TC = 100OC 80
PEAK FORWARD SURGE CURRENT,
MECHANICAL DATA
Case: TO-251 molded plastic Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.015 ounce, 0.4 gram.
30 25
CAPACITANCE, pF
20 15 10 5 0 1 2 5 10 20 50 100 200 500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
Part Number: ED302T - ED306T
PAGE 2
元器件交易网
RATING AND CHARACTERISTIC CURVES
40 20
200 V 300 - 400 V 600 V
INSTANTANEOUS FORWARD CURRENT
5.0
AVERAGE FORWARD CURRENT
4.0 3.0 2.0 1.0 0 150
10 8 6 4 2 1.0 .8 .6 .4 .2 .1
TJ=25 C PULSE WIDTH=200mS 0.9 1.10 1.30 1.50 1.70 1.90 2.10
LM4050AIM3X-10中文资料
LM4050Precision Micropower Shunt Voltage ReferenceGeneral DescriptionIdeal for space critical applications,the LM4050precision voltage reference is available in the sub-miniature (3mm x 1.3mm)SSOT-23surface-mount package.The LM4050’s design eliminates the need for an external stabilizing capaci-tor while ensuring stability with any capacitive load,thus making the LM4050easy to use.Further reducing design ef-fort is the availability of several fixed reverse breakdown volt-ages:2.500V,4.096V,5.000V,8.192V,and 10.000V.The minimum operating current increases from 60µA for the LM4050-2.5to 100µA for the LM4050-10.0.All versions have a maximum operating current of 15mA.The LM4050utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime parts have an accuracy of better than ±0.1%(A grade)at 25˚C.Bandgap reference temperature drift curvature correction and low dynamic impedance ensure stable reverse break-down voltage accuracy over a wide range of operating tem-peratures and currents.All grades and voltage options of the LM4050operate be-tween −40˚C and +85˚C.Selected parts can operate in the extended temperature range,from −40˚C and +125˚C.Featuresn Small packages:SSOT-23n No output capacitor required n Tolerates capacitive loadsnFixed reverse breakdown voltages of 2.500V,4.096V,5.000V,8.192V,and 10.000VKey Specifications (LM4050-2.5)n Output voltage tolerance (A grade,25˚C)±0.1%(max)n Low output noise (10Hz to 10kHz)41µV rms (typ)n Wide operating current range 60µA to 15mA n Industrial temperature range −40˚C to +85˚C n Extended temperature range −40˚C to +125˚C n Low temperature coefficient50ppm/˚C (max)Applicationsn Portable,Battery-Powered Equipment n Data Acquisition Systems n Instrumentation n Process Controln Energy Management n Product Testing n AutomotivenPrecision Audio ComponentsConnection DiagramsSSOT-23DS101045-1*This pin must be left floating or connected to pin 2.Top ViewSee NS Package Number MF03AMay 2000LM4050Precision Micropower Shunt Voltage Reference©2000National Semiconductor Corporation Ordering InformationIndustrial Temperature Range (−40˚C to +85˚C)Reverse BreakdownVoltage Tolerance at 25˚C and AverageReverse BreakdownVoltage Temperature CoefficientLM4050Supplied as 1000Units,Tape and ReelLM4050Supplied as 3000Units,Tape and Reel±0.1%,50ppm/˚C max (A grade)LM4050AIM3-2.5LM4050AIM3X-2.5LM4050AIM3-4.1LM4050AIM3X-4.1LM4050AIM3-5.0LM4050AIM3X-5.0LM4050AIM3-8.2LM4050AIM3X-8.2LM4050AIM3-10LM4050AIM3X-10±0.2%,50ppm/˚C max (B grade)LM4050BIM3-2.5LM4050BIM3X-2.5LM4050BIM3-4.1LM4050BIM3X-4.1LM4050BIM3-5.0LM4050BIM3X-5.0LM4050BIM3-8.2LM4050BIM3X-8.2LM4050BIM3-10LM4050BIM3X-10±0.5%,50ppm/˚C max (C grade)LM4050CIM3-2.5LM4050CIM3X-2.5LM4050CIM3-4.1LM4050CIM3X-4.1LM4050CIM3-5.0LM4050CIM3X-5.0LM4050CIM3-8.2LM4050CIM3X-8.2LM4050CIM3-10LM4050CIM3X-10Extended Temperature Range (−40˚C to +125˚C)Reverse BreakdownVoltage Tolerance at 25˚C and AverageReverse BreakdownVoltage Temperature CoefficientLM4050Supplied as 1000Units,Tape and ReelLM4050Supplied as 3000Units,Tape and Reel±0.5%,50ppm/˚C max (C grade)LM4050CEM3-2.5LM4050CEM3X-2.5SSOT-23Package Marking InformationOnly three fields of marking are possible on the SSOT-23’s small surface.This table gives the meaning of the three fields.Part MarkingField DefinitionRCA First Field:RDA R =Reference REA Second Field:RFA C =2.500V Voltage Option RGA D =4.096V Voltage Option RCB E =5.000V Voltage Option RDB F =8.192V Voltage Option REB G =10.000V Voltage OptionRFB RGB Third Field:RCC A–C =Initial Reverse Breakdown Voltage or Reference Voltage Tolerance RDC A =±0.1%,B =±0.2%,C =+0.5%,REC RFC RGCL M 4050 2Absolute Maximum Ratings(Note1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Reverse Current20mA Forward Current10mA Power Dissipation(T A=25˚C)(Note3)M3Package280mW Storage Temperature(Note2)−65˚C to+150˚C Lead TemperatureM3PackageVapor phase(60seconds)+215˚C Infrared(15seconds)+220˚C ESD SusceptibilityHuman Body Model(Note4)2kVMachine Model(Note4)200V See AN-450“Surface Mounting Methods and Their Effecton Product Reliability”for other methods of soldering surface mount devices.Operating Ratings(Notes1,3)Temperature Range(T min≤T A≤T max) Industrial Temperature Range−40˚C≤T A≤+85˚C Extended temperature Range−40˚C≤T A≤+125˚C Reverse CurrentLM4050-2.560µA to15mA LM4050-4.168µA to15mA LM4050-5.074µA to15mA LM4050-8.291µA to15mA LM4050-10.0100µA to15mALM4050-2.5Electrical CharacteristicsBoldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Re-verse Breakdown Voltage tolerances of±0.1%,±0.2%,and0.5%respectively.Symbol Parameter Conditions Typical(Note5)LM4050AIM3Limits(Note6)LM4050BIM3Limits(Note6)LM4050CIM3LM4050CEM3Limits(Note6)Units(Limit)V R Reverse BreakdownVoltageI R=100µA 2.500VReverse BreakdownVoltage Tolerance(Note7)I R=100µA±2.5±5.0±13mV(max)Industrial Temp.RangeDevices±11±14±21mV(max) Extended Temp.RangeDevices±25mV(max)I RMIN Minimum Operating Current41µA606060µA(max)656565µA(max)∆V R/∆T Average ReverseBreakdown VoltageTemperature Coefficient(Note7)I R=10mA±20ppm/˚CI R=1mA±15ppm/˚CI R=100µA±15±50±50±50ppm/˚C(max)∆V R/∆I R Reverse BreakdownVoltage Change withOperating Current Change(Note8)I RMIN≤I R≤1mA0.3mV0.80.80.8mV(max)1.2 1.2 1.2mV(max) 1mA≤I R≤15mA2.3mV6.0 6.0 6.0mV(max)8.08.08.0mV(max)Z R Reverse DynamicImpedance I R=1mA,f=120Hz,I AC=0.1I R0.3Ωe N Wideband Noise I R=100µA41µV rms10Hz≤f≤10kHz∆V R Reverse BreakdownVoltage Long Term Stability t=1000hrsT=25˚C±0.1˚CI R=100µA120ppmV HYST Output Hysteresis∆T=−40˚C to125˚C0.7mVLM40503LM4050-4.1Electrical Characteristics (Industrial Temperature Range)Boldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Re-verse Breakdown Voltage tolerances of ±0.1%,±0.2%,and 0.5%respectively.Symbol Parameter ConditionsTypical (Note 5)Units (Limit)LM4050AIM3LM4050BIM3LM4050CIM3Limits Limits Limits (Note 6)(Note 6)(Note 6)V RReverse Breakdown VoltageI R =100µA4.096VReverse Breakdown Voltage Tolerance (Note 7)I R =100µA ±4.1±8.2±21mV (max)±18±22±34mV (max)I RMINMinimum Operating Current52µA 686868µA (max)737373µA (max)∆V R /∆T Average ReverseBreakdown Voltage TemperatureCoefficient(Note 7)I R =10mA ±30ppm/˚C I R =1mA ±20ppm/˚CI R =100µA ±20±50±50±50ppm/˚C (max)∆V R /∆I R Reverse BreakdownVoltage Change withOperating Current Change (Note 8)I RMIN ≤I R ≤1mA0.2mV 0.90.90.9mV (max)1.21.2 1.2mV (max)1mA ≤I R ≤15mA2.0mV 7.07.07.0mV (max)10.010.010.0mV (max)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,0.5ΩI AC =0.1I R e N Wideband NoiseI R =100µA 93µV rms 10Hz ≤f ≤10kHz∆V RReverse Breakdown Voltage Long Term Stability t =1000hrsT =25˚C ±0.1˚CI R =100µA 120ppmV HYSTOutput Hysteresis∆T =−40˚C to 125˚C1.148mVL M 4050 4LM4050-5.0Electrical Characteristics(Industrial Temperature Range)Boldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Re-verse Breakdown Voltage tolerances of±0.1%,±0.2%and0.5%respectively.Symbol Parameter Conditions Typical(Note5)Units(Limit) LM4050AIM3LM4050BIM3LM4050CIM3LimitsLimits Limits(Note6)(Note6)(Note6)V R Reverse BreakdownVoltageI R=100µA 5.000VReverse Breakdown Voltage Tolerance(Note7)I R=100µA±5.0±10±25mV(max)±22±27±42mV(max)I RMIN Minimum Operating Current56µA747474µA(max)808080µA(max)∆V R/∆T Average ReverseBreakdown VoltageTemperature Coefficient(Note7)I R=10mA±30ppm/˚CI R=1mA±20ppm/˚CI R=100µA±20±50±50±50ppm/˚C(max)∆V R/∆I R Reverse BreakdownVoltage Change withOperating Current Change(Note8)I RMIN≤I R≤1mA0.2mV1.0 1.0 1.0mV(max)1.4 1.4 1.4mV(max) 1mA≤I R≤15mA2.0mV8.08.08.0mV(max)12.012.012.0mV(max)Z R Reverse DynamicImpedance I R=1mA,f=120Hz,0.5ΩI AC=0.1I RΩ(max)e N Wideband Noise I R=100µA93µV rms10Hz≤f≤10kHz∆V R Reverse BreakdownVoltage Long Term Stability t=1000hrsT=25˚C±0.1˚C120ppm I R=100µAV HYST Output Hysteresis∆T=−40˚C to125˚C 1.4mVLM40505LM4050-8.2Electrical Characteristics (Industrial Temperature Range)Boldface limits apply for T A =T J =T MIN to T MAX ;all other limits T A =T J =25˚C.The grades A,B and C designate initial Re-verse Breakdown Voltage tolerances of ±0.1%and ±0.2%and 0.5%respectively.Symbol Parameter ConditionsTypical (Note 5)Units (Limit)LM4050AIM3LM4050BIM3LM4050CIM3Limits Limits Limits (Note 6)(Note 6)(Note 6)V RReverse Breakdown VoltageI R =150µA8.192VReverse Breakdown Voltage Tolerance (Note 7)I R =150µA ±8.2±16±41mV (max)±35±43±68mV (max)I RMINMinimum Operating Current74µA 919191µA (max)959595µA (max)∆V R /∆T Average ReverseBreakdown Voltage TemperatureCoefficient(Note 7)I R =10mA ±40ppm/˚C I R =1mA ±20ppm/˚CI R =150µA ±20±50±50±50ppm/˚C (max)∆V R /∆I R Reverse BreakdownVoltage Change withOperating Current Change (Note 8)I RMIN ≤I R ≤1mA0.6mV 1.3 1.3 1.3mV (max)2.52.5 2.5mV (max)1mA ≤I R ≤15mA7.0mV 10.010.010.0mV (max)18.018.018.0mV (max)Z R Reverse Dynamic Impedance I R =1mA,f =120Hz,0.6ΩI AC =0.1I R e N Wideband NoiseI R =150µA 150µV rms10Hz ≤f ≤10kHz∆V RReverse Breakdown Voltage Long Term Stability t =1000hrsT =25˚C ±0.1˚C120ppm I R =150µAV HYSTOutput Hysteresis∆T =−40˚C to 125˚C2.3mVL M 4050 6LM4050-10.0Electrical Characteristics(Industrial Temperature Range)Boldface limits apply for T A=T J=T MIN to T MAX;all other limits T A=T J=25˚C.The grades A,B and C designate initial Re-verse Breakdown Voltage tolerances of±0.1%and±0.2%and0.5%respectively.Symbol Parameter Conditions Typical(Note5)Units(Limit) LM4050AIM3LM4050BIM3LM4050CIM3Limits Limits Limits(Note6)(Note6)(Note6)V R Reverse BreakdownVoltageI R=150µA10.00VReverse Breakdown Voltage Tolerance(Note7)I R=150µA±10±20±50mV(max)±43±53±83mV(max)I RMIN Minimum Operating Current80µA100100100µA(max)103103103µA(max)∆V R/∆T Average ReverseBreakdown VoltageTemperature Coefficient(Note7)I R=10mA±40ppm/˚C I R=1mA±20ppm/˚C I R=150µA±20±50±50±50ppm/˚C(max)∆V R/∆I R Reverse BreakdownVoltage Change withOperating Current Change(Note8)I RMIN≤I R≤1mA0.8mV1.5 1.5 1.5mV(max)3.5 3.5 3.5mV(max) 1mA≤I R≤15mA8.0mV12.012.012.0mV(max)23.023.023.0mV(max)Z R Reverse DynamicImpedance I R=1mA,f=120Hz,0.7ΩI AC=0.1I Re N Wideband Noise I R=150µA150µV rms10Hz≤f≤10kHz∆V R Reverse BreakdownVoltage Long Term Stability t=1000hrsT=25˚C±0.1˚C120ppm I R=150µAV HYST Output Hysteresis∆T=−40˚C to125˚C 2.8mV Note1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Operating Ratings indicate conditions for which the device is func-tional,but do not guarantee specific performance limits.For guaranteed specifications and test conditions,see the Electrical Characteristics.The guaranteed speci-fications apply only for the test conditions listed.Some performance characteristics may degrade when the device is not operated under the listed test conditions.Note2:If parts are exposed to temperatures outside the specific operating temperature range,the output may shift due to hysteresis.Note3:The maximum power dissipation must be derated at elevated temperatures and is dictated by T Jmax(maximum junction temperature),θJA(junction to am-bient thermal resistance),and T A(ambient temperature).The maximum allowable power dissipation at any temperature is PD max=(T Jmax−T A)/θJA or the number given in the Absolute Maximum Ratings,whichever is lower.For the LM4050,T Jmax=125˚C,and the typical thermal resistance(θJA),when board mounted,is 326˚C/W for the SSOT-23package.Note4:The human body model is a100pF capacitor discharged through a1.5kΩresistor into each pin.The machine model is a200pF capacitor discharged di-rectly into each pin.Note5:Typicals are at T J=25˚C and represent most likely parametric norm.Note6:Limits are100%production tested at25˚C.Limits over temperature are guaranteed through correlation using Statistical Quality Control(SQC)methods.The limits are used to calculate National’s AOQL.Note7:The boldface(over-temperature)limit for Reverse Breakdown Voltage Tolerance is defined as the room temperature Reverse Breakdown Voltage Tolerance ±[(∆V R/∆T)(max∆T)(V R)].Where,∆V R/∆T is the V R temperature coefficient,max∆T is the maximum difference in temperature from the reference point of25˚C to T MIN or T MAX,and V R is the reverse breakdown voltage.The total over-temperature tolerance for the different grades in the industrial temperature range where max∆T =65˚C is shown below:A-grade:±0.425%=±0.1%±50ppm/˚C x65˚CB-grade:±0.525%=±0.2%±50ppm/˚C x65˚CC-grade:±0.825%=±0.5%±50ppm/˚C x65˚CTherefore,as an example,the A-grade LM4050-2.5has an over-temperature Reverse Breakdown Voltage tolerance of±2.5V x0.425%=±11mV.Note8:Load regulation is measured on pulse basis from no load to the specified load current.Output changes due to die temperature change must be taken into account separately.LM40507Typical Performance CharacteristicsOutput Impedance vs FrequencyDS101045-10Output Impedance vs FrequencyDS101045-11Reverse Characteristics and Minimum Operating CurrentDS101045-12Noise Voltage vs FrequencyDS101045-13Thermal HysteresisDS101045-29L M 4050 8Start-Up CharacteristicsFunctional Block DiagramDS101045-5LM4050-2.5R S =30kDS101045-7LM4050-5.0R S =30kDS101045-8LM4050-10.0R S =30kDS101045-9DS101045-14LM40509Applications InformationThe LM4050is a precision micro-power curvature-corrected bandgap shunt voltage reference.For space critical applica-tions,the LM4050is available in the sub-miniature SSOT-23surface-mount package.The LM4050has been designed for stable operation without the need of an external capacitor connected between the “+”pin and the “−”pin.If,however,a bypass capacitor is used,the LM4050remains stable.Re-ducing design effort is the availability of several fixed reverse breakdown voltages:2.500V,4.096V,5.000V,8.192V,and 10.000V.The minimum operating current increases from 60µA for the LM4050-2.5to 100µA for the LM4050-10.0.All versions have a maximum operating current of 15mA.LM4050s in the SSOT-23packages have a parasitic Schot-tky diode between pin 2(−)and pin 3(Die attach interface contact).Therefore,pin 3of the SSOT-23package must be left floating or connected to pin 2.The 4.096V version allows single +5V 12-bit ADCs or DACs to operate with an LSB equal to 1mV.For 12-bit ADCs or DACs that operate on supplies of 10V or greater,the 8.192V version gives 2mV per LSB.In a conventional shunt regulator application (Figure 1),an external series resistor (R S )is connected between the sup-ply voltage and the LM4050.R S determines the current that flows through the load (I L )and the LM4050(I Q ).Since load current and supply voltage may vary,R S should be small enough to supply at least the maximum guaranteed I RMIN(spec.table)to the LM4050even when the supply voltage is at its minimum and the load current is at its maximum value.When the supply voltage is at its maximum and I L is at its minimum,R S should be large enough so that the current flowing through the LM4050is less than 15mA.R S is determined by the supply voltage,(V S ),the load and operating current,(I L and I Q ),and the LM4050’s reverse breakdown voltage,V R .Typical ApplicationsDS101045-15FIGURE 1.Shunt RegulatorL M 4050 10LM4050 Typical Applications(Continued)DS101045-16**Ceramic monolithic*TantalumFIGURE2.LM4050-4.1’s Nominal4.096breakdown voltage gives ADC124511mV/LSB11Typical Applications(Continued)DS101045-17FIGURE 3.Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.Nominal clamping voltage is ±11.5V (LM4050’s reverse breakdown voltage +2diode V F ).DS101045-18FIGURE 4.Protecting Op Amp input.The bounding voltage is ±4V with the LM4050-2.5(LM4050’s reverse breakdown voltage +3diode V F ).L M 4050 12Typical Applications(Continued)DS101045-19FIGURE 5.Precision ±4.096V ReferenceDS101045-21DS101045-22FIGURE 6.Precision 1µA to 1mA Current SourcesLM405013Physical Dimensionsinches (millimeters)unless otherwise notedLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Corporation AmericasTel:1-800-272-9959Fax:1-800-737-7018Email:support@National Semiconductor EuropeFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Response Group Tel:65-2544466Fax:65-2504466Email:ap.support@National Semiconductor Japan Ltd.Tel:81-3-5639-7560Fax:81-3-5639-7507Plastic Surface Mount Package (M3)NS Package Number MF03A (JEDEC Registration TO-236AB)L M 4050P r e c i s i o n M i c r o p o w e r S h u n t V o l t a g e R e f e r e n c eNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.。
NSS40500UW3T2G_07资料
NSS40500UW3T2G40 V, 6.0 A, Low V CE(sat) PNP TransistorON Semiconductor’s e2PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.•This is a Pb−Free DeviceMAXIMUM RATINGS (T A = 25°C)Rating Symbol Max Unit Collector-Emitter Voltage V CEO−40Vdc Collector-Base Voltage V CBO−40Vdc Emitter-Base Voltage V EBO−7.0Vdc Collector Current − Continuous I C−5.0Adc Collector Current − Peak I CM−6.0A Electrostatic Discharge ESD HBM Class 3BMM Class C THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Total Device Dissipation, T A = 25°CDerate above 25°CP D (Note 1)8757.0mW mW/°CThermal Resistance,Junction−to−AmbientR q JA (Note 1)143°C/WTotal Device Dissipation, T A = 25°C Derate above 25°C P D (Note 2) 1.511.8WmW/°CThermal Resistance, Junction−to−AmbientR q JA (Note 2)85°C/WThermal Resistance,Junction−to−Lead #1R q JL (Note 2)23°C/WTotal Device Dissipation (Single Pulse < 10 sec)P Dsingle(Notes 2 & 3)3.0WJunction and Storage Temperature Range T J, T stg−55 to+150°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.FR−4 @ 100 mm2, 1 oz copper traces.2.FR−4 @ 500 mm2, 1 oz copper traces.3.Thermal response.Device Package Shipping†ORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.NSS40500UW3T2G WDFN3(Pb−Free)3000/Tape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICSCollector−Emitter Breakdown Voltage (I C = −10 mAdc, I B = 0)V(BR)CEO−40−−VdcCollector−Base Breakdown Voltage (I C = −0.1 mAdc, I E = 0)V(BR)CBO−40−−VdcEmitter−Base Breakdown Voltage (I E = −0.1 mAdc, I C = 0)V(BR)EBO−7.0−−VdcCollector Cutoff Current (V CB = −40 Vdc, I E = 0)I CBO−−−0.1m AdcEmitter Cutoff Current (V EB = −7.0 Vdc)I EBO−−−0.1m AdcON CHARACTERISTICSDC Current Gain (Note 4) (I C = −10 mA, V CE = −2.0 V) (I C = −500 mA, V CE = −2.0 V) (I C = −1.0 A, V CE = −2.0 V) (I C = −2.0 A, V CE = −2.0 V) (I C = −3.0 A, V CE = −2.0 V)h FE250250220180150−−300250200−−−−−Collector−Emitter Saturation Voltage (Note 4) (I C = −0.1 A, I B = −0.010 A) (Note 5)(I C = −1.0 A, I B = −0.100 A)(I C = −1.0 A, I B = −0.010 A)(I C=−2.0 A, I B = −0.020 A)(I C = −3.0 A, I B = −0.030 A)(I C = −4.0 A, I B = −0.400 A)V CE(sat)−−−−−−0.010−0.065−0.110−0.190−0.310−0.215−0.015−0.080−0.130−0.220−0.340−0.260VBase−Emitter Saturation Voltage (Note 4) (I C = −1.0 A, I B = −0.01 A)V BE(sat)−−0.76−0.900VBase−Emitter Turn−on Voltage (Note 4) (I C = −2.0 A, V CE = −3.0 V)V BE(on)−−0.80−0.900VCutoff Frequency(I C = −100 mA, V CE = −5.0 V, f = 100 MHz)f T100−−MHzInput Capacitance (V EB = −0.5 V, f = 1.0 MHz)Cibo−475pF Output Capacitance (V CB = −3.0 V, f = 1.0 MHz)Cobo−150pF SWITCHING CHARACTERISTICSDelay (V CC = −30 V, I C = 750 mA, I B1 = 15 mA)t d−−70ns Rise (V CC = −30 V, I C = 750 mA, I B1 = 15 mA)t r−−150ns Storage (V CC = −30 V, I C = 750 mA, I B1 = 15 mA)t s−−600ns Fall (V CC = −30 V, I C = 750 mA, I B1 = 15 mA)t f−−160ns4.Pulsed Condition: Pulse Width = 300 m sec, Duty Cycle ≤ 2%.5.Guaranteed by design but not tested.V C E (s a t ), C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 5. Base Emitter Turn −On Voltage vs.Collector CurrentFigure 6. Saturation RegionI C , COLLECTOR CURRENT (A)I B , BASE CURRENT (mA)50150h F E , D C C U R R E N T G A I NV B E (o n ), B A S E E M I T T E R T U R N −O N V O L T A G E (V )V CE (V dc )400350300200150250500450C i b o , I N P U T C A P A C I T A N C E (p F )Figure 9. PNP Safe Operating AreaPACKAGE DIMENSIONSWDFN3CASE 506AU −01ISSUE ONOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 .2.CONTROLLING DIMENSION: MILLIMETERS.3.DIMENSION b APPLIES TO PLATED TERMINAL AND ISMEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL.4.COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS.BOTTOM VIEWDIM A MIN NOM MAX MINMILLIMETERS0.700.750.800.028INCHES A10.000.050.000A30.20 REF b 0.250.300.350.010D 2.00 BSC D2 1.40 1.50 1.600.055E 2.00 BSC E20.90 1.00 1.100.0350.0300.0310.0020.008 REF 0.0120.0140.079 BSC0.0590.0630.079 BSC0.0390.043NOM MAX e 0.35 REF 0.014 REFK 1.30 BSC 0.051 BSC 0.350.400.450.0140.0160.018L*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
SENTRON 3VA5 250A 65kA @ 480V 三极电源保护电路断路器说明书
Miscellaneous
Further information
Siemens has decided to exit the Russian market (see here). https:///global/en/pressrelease/siemens-wind-down-russian-business
Information on the packaging https:///cs/ww/en/view/109813875
Information- and Downloadcenter (Catalogs, Brochures,…) /lowvoltage/catalogs
No
No
TM230 LI 3
800 V 750 V 690 V 58 W 19.33 W
20 000 8 000 4 000 8 000 4 000 No
without
No No 2.048 kg
No
250 A 244 A 239 A 233 A 227 A 222 A
3VA52256EC310AA0 Page 1/6
6/18/2023
Subject to change without notice © Copyright Siemens
● at 70 °C Switching capacity according to IEC 60ห้องสมุดไป่ตู้47
switching capacity class of the circuit breaker maximum short-circuit current breaking capacity (Icu)
Auxiliary circuit number of CO contacts / for auxiliary contacts
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
General DescriptionThe LM4050/LM4051 are precision two-terminal, shunt-mode, bandgap voltage references available in fixed reverse breakdown voltages of 1.225V, 2.048V, 2.500V,3.000V, 3.3V, 4.096V, and 5.000V. Ideal for space-criti-cal applications, the LM4050/LM4051 are offered in the subminiature 3-pin SC70 surface-mount packages (1.8mm x 1.8mm), 50% smaller than comparable devices in SOT23 surface-mount package (SOT23 ver-sions are also available).Laser-trimmed resistors ensure excellent initial accuracy. With a 50ppm/°C temperature coefficient,these devices are offered in three grades of initial accu-racy ranging from 0.1% to 0.5%. The LM4050/LM4051have a 60µA to 15mA shunt-current capability with low dynamic impedance, ensuring stable reverse break-down voltage accuracy over a wide range of operating temperatures and currents. The LM4050/LM4051 do not require an external stabilizing capacitor while ensuring stability with any capacitive loads.The LM4050/LM4051 specifications are guaranteed over the temperature range of -40°C to +125°C.________________________ApplicationsPortable, Battery-Powered Equipment Notebook Computers Cell PhonesIndustrial Process ControlsFeatures♦50ppm/°C (max) Temperature Coefficient Guaranteed over the -40°C to +125°C Temperature Range ♦Ultra-Small 3-Pin SC70 Package ♦0.1% (max) Initial Accuracy♦Wide Operating Current Range: 60µA to 15mA ♦Low 28µV RMS Output Noise (10Hz to 10kHz)♦1.225V, 2.048V, 2.500V, 3.000V, 3.3V, 4.096V, and 5.000V Fixed Reverse Breakdown Voltages ♦No Output Capacitors Required ♦Tolerates Capacitive LoadsLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages________________________________________________________________Maxim Integrated Products 1Pin ConfigurationTypical Operating CircuitSelector Guide19-2563; Rev 3; 3/06Ordering Information appears at end of data sheet.For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .L M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS—1.225VStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Reverse Current (cathode to anode)..................................20mA Forward Current (anode to cathode)..................................10mA Continuous Power Dissipation (T A = +70°C)3-Pin SC70 (derate 2.17mW/°C above +70°C)............174mW 3-Pin SOT23 (derate 4.01mW/°C above +70°C)..........320mWOperating Temperature RangeLM4050/LM4051_E_ _ _................................-40°C to +125°C Storage Temperature Range.............................-65°C to +150°C Junction Temperature......................................................+150°C Lead Temperature (soldering, 10s)..................................+300°CLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages_______________________________________________________________________________________3ELECTRICAL CHARACTERISTICS—2.048VL M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages4_______________________________________________________________________________________ELECTRICAL CHARACTERISTICS—2.500VLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown VoltagesELECTRICAL CHARACTERISTICS—3.000VL M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages6_______________________________________________________________________________________ELECTRICAL CHARACTERISTICS—4.096VLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages_______________________________________________________________________________________7RTOL R R where ∆V R / ∆T is the V R temperature coefficient, max ∆T is the difference from the +25°C reference point to T MIN or T MAX ,and V R is the reverse breakdown voltage.The total tolerance over the full temperature range for the different grades where max ∆T = +100°C is shown below:•A grade: ±0.6% = ±0.1% ±50ppm/°C ✕100°C •B grade: ±0.7% = ±0.2% ±50ppm/°C ✕100°C •C grade: ±1.0% = ±0.5% ±50ppm/°C ✕100°CNote 3:Guaranteed by design.ELECTRICAL CHARACTERISTICS—5.000VL M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages8_______________________________________________________________________________________OUTPUT VOLTAGE vs. TEMPERATURE(V OUT = 2.500V)M A X 4050 t o c 02TEMPERATURE (°C)O U T P U T V O L T A G E (V )11085603510-152.4922.4942.4962.4982.490-40135OUTPUT VOLTAGE vs. TEMPERATURE(V OUT = 5.000V)M A X 4050 t o c 03TEMPERATURE (°C)O U T P U T V O L T A G E (V )11085-151035604.9894.9914.9934.9954.9974.9995.0015.0034.987-40135Typical Operating Characteristics(I R = 100µA, SC70-3 package, T A = +25°C, unless otherwise noted.)0123456050100REVERSE CHARACTERISTICS AND MINIMUM OPERATING CURRENTREVERSE CURRENT (µA)R E V E R S E V O L T A G E (V )LM4050-5.0VREVERSE VOLTAGE vs. I SHUNTI SHUNT (mA)R E V E R S E V O L T A G E C H A N G E (m V )151051234560020LM4050-2.5VREVERSE VOLTAGE vs. I SHUNTI SHUNT (mA)R E V E R S E V O L T A G E C H A N G E (m V )15105123450020LM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages_______________________________________________________________________________________9V G E NV R A C -C O U P L E D+25µA-25µA10mV/divLM4050-5.0VLOAD-TRANSIENT RESPONSE40µs/divI SHUNT = 100µA ± 25µA R L = 100k Ω, SEE FIGURE 1.V G E NV R A C -C O U P L E D+250µA-250µA10mV/divLM4050-2.5VLOAD-TRANSIENT RESPONSE10µs/divI SHUNT = 1mA ± 250µA R L = 10k Ω, SEE FIGURE 1.Typical Operating Characteristics (continued)(I R = 100µA, SC70-3 package, T A = +25°C, unless otherwise noted.)V G E NV R A C -C O U P L E D+25µA-25µA2mV/divLM4050-2.5VLOAD-TRANSIENT RESPONSELM4050 toc0610µs/divCH1: V GEN 2V/divCH2: V R AC-COUPLED 2mV/divI SHUNT = 100µA ± 25µA, R L = 100k Ω, SEE FIGURE 1.V G E NV R A C -C O U P L E D+2.5mA-2.5mA20mV/div LM4050-2.5VLOAD-TRANSIENT RESPONSE10µs/divI SHUNT = 10mA ± 2.5mA R L = 1k Ω, SEE FIGURE 1.V G E NV R A C -C O U P L E D+2.5mA-2.5mA20mV/divLM4050-5.0VLOAD-TRANSIENT RESPONSE10µs/divI SHUNT = 10mA ± 2.5mA R L = 1k Ω, SEE FIGURE 1.V G E NV R A C -C O U P L E D+250µA-250µA10mV/div LM4050-5.0VLOAD-TRANSIENT RESPONSE10µs/divI SHUNT = 1mA ± 250µA R L = 10k Ω, SEE FIGURE 1.Figure 1. Load-Transient Test CircuitL M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages10______________________________________________________________________________________V I NV O U TLM4050-5.0VSTARTUP CHARACTERISTICS405020301060708090RESPONSE TIME (µs)5V 04V 2V SEE FIGURE 2.0.1k10k 1k100k1MLM4050-2.5VOUTPUT IMPEDANCE vs. FREQUENCYFREQUENCY (Hz)I M P E D A N C E (Ω)10000.1110100Typical Operating Characteristics (continued)(I R = 100µA, SC70-3 package, T A = +25°C, unless otherwise noted.)V I NV O U TLM4050-2.5VSTARTUP CHARACTERISTICS1620812424283236RESPONSE TIME (µs)5V 02V 1V R S = 30k ΩSEE FIGURE 2.1100101k10kLM4050-2.5V NOISE vs. FREQUENCYL M 4050 t o c 16FREQUENCY (Hz)10,0001001000N O I S E (n V /H z )1100101k10kLM4050-5.0V NOISE vs. FREQUENCYL M 4050 t o c 17FREQUENCY (Hz)10,0001001000N O I S E (n V /H z)0.1k10k 1k100k1MLM4050-5.0VOUTPUT IMPEDANCE vs. FREQUENCYFREQUENCY (Hz)I M P E D A N C E (Ω)1000.1110Figure 2. Startup Characteristics Test CircuitLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages______________________________________________________________________________________11Applications InformationThe LM4050/LM4051s’ internal pass transistors are used to maintain a constant output voltage (V SHUNT ) by sinking the necessary amount of current across a source resistor.The source resistance (R S ) is determined from the load current (I LOAD ) range, supply voltage (V S ) variations,V SHUNT , and desired quiescent current.Choose the value of R S when V S is at a minimum and I LOAD is at a maximum. Maintain a minimum I SHUNT of 60µA at all times. The R S value should be large enough to keep I SHUNT less than 15mA for proper regulation when V S is maximum and I LOAD is at a minimum. To prevent damage to the device, I SHUNT should never exceed 20mA.Therefore, the value of R S is bounded by the following equation:[V S(MIN)- V R ] / [60µA + I LOAD(MAX)] > R S > [V S(MAX)- V R ] / [20mA + I LOAD(MIN)]Choosing a larger resistance minimizes the total power dis-sipation in the circuit by reducing the shunt current (P D(TOTAL)= V S ✕I SHUNT ). Provide a safety margin to incorporate the worst-case tolerance of the resistor used.Ensure that the resistor’s power rating is adequate, using the following general power equation:PD R = I SHUNT ✕(V S(MAX)- V SHUNT )Output CapacitanceThe LM4050/LM4051 do not require external capacitors for frequency stability and are stable for any output capacitance.Temperature PerformanceThe LM4050/LM4051 typically exhibit output voltage temperature coefficients within ±15ppm/°C. The polari-ty of the temperature coefficients may be different from one device to another; some may have positive coeffi-cients, and others may have negative coefficients.High Temperature OperationThe maximum junction temperature of the LM4050/LM4051 is +150°C. The maximum operating temperature for the LM4050/LM4051_E_ is +125°C. At a maximum load current of 15mA and a maximum output voltage of 5V, the parts dissipate 75mW of power. The power dissi-pation limits of the 3-pin SC70 call for a derating value of 2.17mW/°C above +70°C and thus for 75mW of power dissipation, the parts self-heat to 35.56°C above ambient temperature. If the ambient temperature is +125°C, the parts operate at 159.56°C, thereby exceeding the maxi-mum junction temperature value of +150°C. For high-temperature operation, care must be taken to ensure the combination of ambient temperature, output power dissi-pation, and package thermal resistance does not con-spire to raise the device temperature beyond that listed in the Absolute Maximum Ratings . Either reduce the out-put load current or the ambient temperature to keep the part within the limits.Figure 3. Typical Operating CircuitChip InformationTRANSISTOR COUNT: 60PROCESS: BiCMOSL M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages12______________________________________________________________________________________Ordering InformationLM4050/LM405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown Voltages______________________________________________________________________________________13Package Information(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)L M 4050/L M 405150ppm/°C Precision Micropower Shunt VoltageReferences with Multiple Reverse Breakdown VoltagesMaxim cannot assume responsibility f or use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.14____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600©2006 Maxim Integrated ProductsPrinted USAis a registered trademark of Maxim Integrated Products, Inc.Package Information (continued)(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,go to /packages .)。