AD5934YRSZ-REEL7中文资料
W947D6HBHX5E;W947D2HBJX5E;中文规格书,Datasheet资料
TABLE OF CONTENTS1. GENERAL DESCRIPTION (4)2. FEATURES (4)3. PIN CONFIGURATION (5)3.1 Ball Assignment: LPDDR X16 (5)3.2 Ball Assignment: LPDDR X32 (5)4. PIN DESCRIPTION (6)4.1 Signal Descriptions (6)4.2 Addressing Table (7)5. BLOCK DIAGRAM (8)5.1 Block Diagram (8)5.2 Simplified State Diagram (9)6. FUNCTION DESCRIPTION (10)6.1 Initialization (10)6.1.1 Initialization Flow Diagram (11)6.1.2 Initialization Waveform Sequence (12)6.2 Register Definition (12)6.2.1 Mode Register Set Operation (12)6.2.2 Mode Register Definition (13)6.2.3. Burst Length (13)6.3 Burst Definition (14)6.4 Burst Type (15)6.5 Read Latency (15)6.6 Extended Mode Register Description (15)6.6.1 Extended Mode Register Definition (16)6.7 Status Register Read (16)6.7.1 SRR Register (A[n:0] = 0) (17)6.7.2 Status Register Read Timing Diagram (18)6.8 Partial Array Self Refresh (19)6.9 Automatic Temperature Compensated Self Refresh (19)6.10 Output Drive Strength (19)6.11 Commands (19)6.11.1 Basic Timing Parameters for Commands (19)6.11.2 Truth Table - Commands (20)6.11.3 Truth Table - DM Operations (21)6.11.4 Truth Table - CKE (21)6.11.5 Truth Table - Current State BANKn - Command to BANKn (22)6.11.6 Truth Table - Current State BANKn, Command to BANKn (23)7. OPERATION (24)7.1. Deselect (24)7.2. No Operation (24)7.2.1 NOP Command (25)7.3 Mode Register Set (25)7.3.1 Mode Register Set Command (25)7.3.2 Mode Register Set Command Timing (26)7.4. Active (26)7.4.1 Active Command (26)7.4.2 Bank Activation Command Cycle (27)7.5. Read (27)7.5.1 Read Command (28)7.5.2 Basic Read Timing Parameters (28)7.5.3 Read Burst Showing CAS Latency (29)7.5.4 Read to Read (29)7.5.5 Consecutive Read Bursts (30)7.5.6 Non-Consecutive Read Bursts (30)7.5.7 Random Read Bursts (31)7.5.8 Read Burst Terminate (31)7.5.9 Read to Write (32)7.5.10 Read to Pre-charge (32)7.5.11 Burst Terminate of Read (33)7.6 Write (33)7.6.1 Write Command (34)7.6.2 Basic Write Timing Parameters (34)7.6.3 Write Burst (min. and max. tDQSS) (35)7.6.4 Write to Write (35)7.6.5 Concatenated Write Bursts (36)7.6.6 Non-Consecutive Write Bursts (36)7.6.7 Random Write Cycles (37)7.6.8 Write to Read (37)7.6.9 Non-Interrupting Write to Read (37)7.6.10 Interrupting Write to Read (38)7.6.11 Write to Precharge (38)7.6.12 Non-Interrupting Write to Precharge (38)7.6.13 Interrupting Write to Precharge (39)7.7 Precharge (39)7.7.1 Precharge Command (40)7.8 Auto Precharge (40)7.9 Refresh Requirements (40)7.10 Auto Refresh (40)7.10.1 Auto Refresh Command (41)7.11 Self Referesh (41)7.11.1 Self Refresh Command (42)7.11.2 Auto Refresh Cycles Back-to-Back (42)7.11.3 Self Refresh Entry and Exit (43)7.12 Power Down (43)7.12.1 Power-Down Entry and Exit (43)7.13 Deep Power Down (44)128Mb Mobile LPDDR7.13.1 Deep Power-Down Entry and Exit (44)7.14 Clock Stop (45)7.14.1 Clock Stop Mode Entry and Exit (45)8. ELECTRICAL CHARACTERISTIC (46)8.1 Absolute Maximum Ratings (46)8.2 Input/Output Capacitance (46)8.3 Electrical Characteristics and AC/DC Operating Conditions (47)8.3.1 Electrical Characteristics and AC/DC Operating Conditions (47)8.4 IDD Specification Parameters and Test Conditions (48)8.4.1 IDD Specification Parameters and Test Conditions (48)8.5 AC Timings (51)8.5.1 CAS Latency Definition (With CL=3) (54)8.5.2 Output Slew Rate Characteristics (55)8.5.3 AC Overshoot/Undershoot Specification (55)8.5.4 AC Overshoot and Undershoot Definition (55)9. PACKAGE DIMENSIONS (56)9.1: LPDDR X 16 (56)9.2: LPDDR X 32 (57)10. ORDERING INFORMATION (58)11. REVISION HISTORY (59)1. GENERAL DESCRIPTIONW947D6HB / W947D2HB is a high-speed Low Power double data rate synchronous dynamic random access memory (LPDDR SDRAM), An access to the LPDDR SDRAM is burst oriented. Consecutive memory location in one page can be accessed at a burst length of 2, 4, 8 and 16 when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the LPDDR SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the pre-charging time. By setting programmable Mode Registers, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. The device supports special low power functions such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh (ATCSR).2. FEATURESVDD = 1.7~1.95VVDDQ = 1.7~1.95V;Data width: x16 / x32Clock rate: 200MHz(-5),166MHz(-6),133MHz(-75)Partial Array Self-Refresh(PASR)Auto Temperature Compensated Self-Refresh(ATCSR) Power Down ModeDeep Power Down Mode (DPD Mode)Programmable output buffer driver strengthFour internal banks for concurrent operationData mask (DM) for write dataClock Stop capability during idle periodsAuto Pre-charge option for each burst accessDouble data rate for data outputDifferential clock inputs (CK and C K)Bidirectional, data strobe (DQS)C AS Latency: 2 and 3Burst Length: 2, 4, 8 and 16Burst Type: Sequential or Interleave 64 ms Refresh periodInterface: LVCMOS compatibleSupport package:Operating Temperature Range :3. PIN CONFIGURATION3.1 Ball Assignment: LPDDR X16(Top View) Pin Configuration 3.2 Ball Assignment: LPDDR X32(Top View) Pin Configuration4. PIN DESCRIPTION 4.1 Signal Descriptions4.2 Addressing Table5. BLOCK DIAGRAM 5.1 Block Diagram5.2 Simplified State Diagram6. FUNCTION DESCRIPTION6.1 InitializationLPDDR SDRAM must be powered up and initialized in a predefined manner. Operations procedures other than those specified may result in undefined operation. If there is any interruption to the device power, the initialization routine should be followed. The steps to be followed for device initialization are listed below.The Mode Register and Extended Mode Register do not have default values. If they are not programmed during the initialization sequence, it may lead to unspecified operation. The clock stop feature is not available until the device has been properly initialized from Step 1 through 11.●Step 1: Provide power, the device core power (VDD) and the device I/O power (VDDQ) must be brought upsimultaneously to prevent device latch-up. Although not required, it is recommended that VDD and VDDQ are from the same power source. Also Assert and hold Clock Enable (CKE) to a LVCMOS logic high level ●Step 2: Once the system has established consistent device power and CKE is driven high, it is safe to applystable clock.●Step 3: There must be at least 200μs of valid clocks before any command may be given to the DRAM. During thistime NOP or DESELECT commands must be issued on the command bus.●Step 4: Issue a PRECHARGE ALL command.●Step 5: Provide NOPs or DESELECT commands for at least tRP time.●Step 6: Issue an AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time.Issue the second AUTO REFRESH command followed by NOPs or DESELECT command for at least tRFC time. Note as part of the initialization sequence there must be two Auto Refresh commands issued.The typical flow is to issue them at Step 6, but they may also be issued between steps 10 and 11.●Step 7: Using the MRS command, program the base mode register. Set the desired operation modes.●Step 8: Provide NOPs or DESELECT commands for at least tMRD time.●Step 9: Using the MRS command, program the extended mode register for the desired operating modes. Note theorder of the base and extended mode register programmed is not important.●Step 10: Provide NOP or DESELECT commands for at least tMRD time.●Step 11: The DRAM has been properly initialized and is ready for any valid command.分销商库存信息:WINBONDW947D6HBHX5E W947D2HBJX5E。
Proteus-ISIS-7库元件中英对照表
Proteus-ISIS-7库元件中英对照表AD芯片-----TECHWELL TW6805A仿真软件里的AD0809有问题,用0808代替定时/计数器的使用方法:CLK:计数和测频状态时,数字波的输入端。
(counter enable)CE:计数使能端;通过属性设置高还是低有效。
无效暂停计数RST:复位端(RESET),可设上升沿(Low-High)或者下降沿(High-Low)有效。
4种工作方式:通过属性Operating Mode 来选择。
Default : 缺省方式,计数器方式。
Time(secs):100S定时方式,由CE和RST控制暂停和重新开始。
Time(hms):10小时定时方式,同上。
Frequency: 测频方式,CE和RST有效时,显示CLK端数字波频率Count:计数方式。
+++++++++++++++++++++++++ +++++++++++++++++++++++++ +++++++++++常用元件列表:POT-HG 可调电位器7SEG-MPX8-CC-BLUE 8位数码管COMPIM 串口SW- 开关7SEG-BCD 含译码驱动的数显Speaker 扬声器2N5771和2N5772,15V对管300MARES , CAP,BUTTON 按钮开关KEYPAD-PHONE 3*4电话键盘KEYPAD-SMALLCALC 4*4计算器键盘KEYPAD-CALCULATOR 4*6计算器键盘PG160128A 128*128液晶++++++++元件库详细分类1.analog ics 模拟集成器件8个子类:amplifier 放大器comparators 比较器display drivers 显示驱动器filters 滤波器miscellaneous 混杂器件regulators 三端稳压器timers 555定时器voltage references 参考电压2,capacitors CAP电容,23个分类别 animated 可显示充放电电荷电容audio grade axial 音响专用电容 axial lead polypropene 径向轴引线聚丙烯电容axial lead polystyrene 径向轴引线聚苯乙烯电容ceramic disc 陶瓷圆片电容 decoupling disc 解耦圆片电容 high temp radial 高温径向电容 high temp axial electrolytic高温径向电解电容metallised polyester film 金属聚酯膜电容metallised polypropene 金属聚丙烯电容metallised polypropene film 金属聚丙烯膜电容miniture electrolytic 微型电解电容 multilayer metallised polyester film 多层金属聚酯膜电容mylar film 聚酯薄膜电容nickel barrier 镍栅电容non polarised 无极性电容polyester layer 聚酯层电容radial electrolytic 径向电解电容 resin dipped 树脂蚀刻电容tantalum bead 钽珠电容variable 可变电容vx a xial electrolytic VX 轴电解电容3,CMOS 4000 series 4000系列数字电路 adders 加法器buffers & drivers 缓冲和驱动器 comparators 比较器counters 计数器decoders 译码器encoders 编码器flip-flops & latches 触发器和锁存器frequency dividers & tiner 分频和定时器gates & inverters 门电路和反相器memory 存储器misc.logic 混杂逻辑电路mutiplexers 数据选择器multivibrators 多谐振荡器phase-locked loops(PLL) 锁相环registers 寄存器signal switcher 信号开关4,connectors 接头;8个分类:audio 音频接头D-type D型接头DIL 双排插座header blocks 插头miscellaneous 各种接头PCB transfer PCB 传输接头 SIL 单盘插座ribbon cable 蛇皮电缆terminal blocks 接线端子台5,data converters 数据转换器:4个分类: A/D converters 模数转换器D/A converters 数模转换器sample & hold 采样保持器temperature sensors 温度传感器6,debugging tools 调试工具数据:3个类别: breakpoint triggers 断点触发器logic probes 逻辑输出探针logic timuli 逻辑状态输入7,diodes 二极管;8个分类:bridge rectifiers 整流桥generic 普通二极管rectifiers 整流二极管schottky 肖特基二极管switching 开关二极管tunnel 隧道二极管varicap 稳压二极管8,inductors 电感:3个类别:generic 普通电感SMT inductors 表面安装技术电感transformers 变压器9,laplace primitives 拉普拉斯模型:7个类别:1st order 一阶模型2nd order 二阶模型controllers 控制器non-linear 非线性模型operators 算子poles/zeros 极点/零点symbols 符号10,memory ICs 存储器芯片:7个分类: dynamic RAM 动态数据存储器EEPROM 电可擦出程序存储器EPROM 可擦出程序存储器I2C memories I2C总线存储器memory cards 存储卡SPI Memories SPI总线存储器static RAM 静态数据存储器11,microprocessor ICs 微处理器:13个分类:12,modelling primitivvves 建模源:9个分类:13,operational amplifiers 运算放大器:7个分类:dual 双运放ideal 理想运放macromodel 大量使用的运放octal 8运放quad 4运放single 单运放triple 三运放14,optoelectronics 光电器件:11个分类: 7-segment displays 7段显示alphanumeric LCDs 液晶数码显示bargraph displays 条形显示dot matrix displays 点阵显示graphical LCDs 液晶图形显示 lamps 灯LCD controllers 液晶控制器LCD controllers 液晶面板显示 LEDs 发光二极管optocouplers 光电耦合serial LCDs 串行液晶显示15,resistors 电阻:11个分类:0.6w metal film 0.6w金属膜电阻10 watt wirewound 10w绕线电阻2w metal film 2w 金属膜电阻3 watt wirewound 3w 绕线电阻7 watt wirewound 7w 绕线电阻generix 普通电阻high voltage 高压电阻NTC 负温度系数热敏电阻resistor packs 排阻variable 滑动变阻器varisitors可变电阻参考试验中采用的可变电阻是:POT-HG16,simulator primitives 仿真源:3个类别: flip-flops 触发器gates 门电路sources 电源17,switches and relays 开关和继电器:4个类别:key pads 键盘relays 普通继电器relays(specific) 专用继电器switches 开关18,switching devices 开关器件:4个分类:DIACs 两端交流开关generic 普通开关元件SCRs 可控硅TRIACs 三端双向可控硅19,真空管:20,传感器:2个分类:pressure 压力传感器temperature 温度传感器21,晶体管:8个分类:bipolar 双极型晶体管generic 普通晶体管(错误)IGBT 绝缘栅双极晶体管JFET 结型场效应管MOSFET 金属氧化物场效应管RF power LDMOS 射频功率LDMOS管RF power VDMOS 射频功率VDMOS管unijunction 单结晶体管Electromechanical 电机MOTOR AC 交流电机MOTOR SERVO 伺服电机双相步进电机motor-bistepper(Bipolar Stepper Motor),四相步进电机motor-stepper(unipolar stepper motor)驱动电路,用ULN2003可以,proteus中推荐的L298和L6201(电子元件-步进电机中有L298资料)+++++++++++++++++++++++++ +++++++++++++++++++++++++ +++++++++++++++++++步进电机,可以用MTD2003,UN2916等专用芯片Proteus中图形液晶模块驱动芯片一览表LM3228 LM3229 LM3267 LM32 83LM3287 LM4228 LM4265 LM42 67LM4283 LM4287 PG12864F PG 24064FPG128128A PG160128AAGM1232G EW12A03GLY HDM32 GS12-B HDM32GS12Y-BHDG12864F-1 HDS12864F-3 HDG 12864L-4 HDG12864L-6NOKIA7110 TG126410GFSB TG13 650FEYAMPIRE128x64 LGM12641BS1RPROTEUS原理图元器件库详细说明Device.lib 单双向可控硅、包括电阻、电容、二极管、三极管和PCB的连接器符号、ACTIVE.LIB 包括虚拟仪器和有源器件、拨动开关、键盘、可调电位器和开关、DIODE.LIB 包括二极管和整流桥、稳压管、变容二极管、大功率二极管、高速二极管、可控硅、DISPLAY.LIB 包括LCD、LED、LED阵列BIPOLAR.LIB 包括三极管FET.LIB 包括场效应管ASIMMDLS.LIB 包括模拟元器件AS 稳压二极管、全桥、74系列、及其他。
半导体传感器ADG1408YRUZ中文规格书
Data SheetADG633Rev. B | Page 7 of 16 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONSS2A S3B D3V SS EN S3A S2B GND D2D1S1B A1A2A0S1A V DD 03275-002Figure 2. 16-Lead TSSOP Pin Configuration NOTES 1.THE EXPOSED PADDLE CAN BE LEFT FLOATING OR BE TIED TO V DD , V SS , OR GND.S3B D3S3A EN S1B D1S1A A0V S S G N D A 2A 1S 2B S 2A V D DD 203275-00312111013492657816151413ADG633TOP VIEW (Not to Scale)Figure 3. 16-Lead LFCSP Pin Configuration1 X means the logic state does not matter; it can be either 0 or 1.ADG633Data SheetRev. B | Page 14 of 16OUTLINE DIMENSIONSCOPLANARITY 0.10COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 31. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters4.104.00 SQ 3.900.350.300.25 2.252.10 SQ1.9510.65BSC BOTTOM VIEW TOP VIEW 16589121340.700.600.50SEATING PLANE0.05 MAX 0.02 NOM 0.203 REF 0.25 MINCOPLANARITY 0.08PIN 1INDICATOR 0.800.750.70COMPLIANT TO JEDEC STANDARDS MO-220-WGGC.FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET.04-15-2016-A P K G -004025/5112PIN 1INDIC ATOR AREA OPTIONS (SEE DETAIL A)DETAIL A (JEDEC 95)EXPOSED PAD Figure 32. 16-Lead Frame Chip Scale Package [LFCSP] 4 mm × 4 mm Body and 0.75 mm Package Height (CP-16-23) Dimensions shown in millimetersORDERING GUIDEModel 1Temperature Range Package Description Package Option ADG633YRU−40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG633YRU-REEL7−40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG633YRUZ−40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG633YRUZ-REEL7−40°C to +125°C 16-Lead Thin Shrink Small Outline Package [TSSOP] RU-16 ADG633YCPZ−40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16-23 ADG633YCPZ-REEL7−40°C to +85°C 16-Lead Lead Frame Chip Scale Package [LFCSP] CP-16-23 1 Z = RoHS Compliant Part.。
ADZS-BF609-EZLITE;ADZS-BF609-EZBRD;中文规格书,Datasheet资料
ADSP-BF609 EZ-KIT Lite®Evaluation System ManualRevision 1.0, March 2012Part Number82-000269-01 Analog Devices, Inc.One T echnology WayaNorwood, Mass. 02062-9106Copyright Information© 2012 Analog Devices, Inc., ALL RIGHTS RESERVED. This docu-ment may not be reproduced in any form without prior, express writtenconsent from Analog Devices, Inc.Printed in the USA.DisclaimerAnalog Devices, Inc. reserves the right to change this product withoutprior notice. Information furnished by Analog Devices is believed to beaccurate and reliable. However, no responsibility is assumed by AnalogDevices for its use; nor for any infringement of patents or other rights ofthird parties which may result from its use. No license is granted by impli-cation or otherwise under the patent rights of Analog Devices, Inc. Trademark and Service Mark NoticeThe Analog Devices logo, Blackfin, CrossCore, EZ-Board, EZ-Extender, and EZ-KIT Lite are registered trademarks of Analog Devices, Inc.All other brand and product names are trademarks or service marks oftheir respective owners.Regulatory ComplianceThe ADSP-BF609 EZ-KIT Lite is designed to be used solely in a labora-tory environment. The board is not intended for use as a consumer end product or as a portion of a consumer end product. The board is an open system design which does not include a shielded enclosure and therefore may cause interference to other electrical devices in close proximity. This board should not be used in or near any medical equipment or RF devices.The ADSP-BF609 EZ-KIT Lite is currently being processed for certifica-tion that it complies with the essential requirements of the EuropeanEMC directive 2004/108/EC and therefore carries the “CE” mark.The EZ-KIT Lite evaluation system contains ESD (electrostatic discharge)sensitive devices. Electrostatic charges readily accumulate on the humanbody and equipment and can discharge without detection. Permanent dam-age may occur on devices subjected to high-energy discharges. Proper ESDprecautions are recommended to avoid performance degradation or loss offunctionality. Store unused EZ-KIT Lite boards in the protective shippingpackage.PREFACEProduct Overview (xii)Purpose of This Manual (xv)Intended Audience (xv)Manual Contents (xvi)What’s New in This Manual (xvi)Technical or Customer Support (xvii)Supported Processors (xvii)Product Information (xviii)Analog Devices Web Site (xviii)EngineerZone (xviii)Related Documents (xix)Notation Conventions (xx)USING ADSP-BF609 EZ-KIT LITEPackage Contents .......................................................................... 1-2 ADSP-BF609 EZ-Board ................................................................ 1-3 Default Configuration ................................................................... 1-3 Supported Operating Systems ....................................................... 1-5ADSP-BF609 EZ-KIT Lite Evaluation System Manual vSystem Requirements .................................................................... 1-5 EZ-KIT Lite Installation ............................................................... 1-6 EZ-KIT Lite Session Startup ......................................................... 1-7 Evaluation License Restrictions ................................................... 1-10 Memory Map ............................................................................. 1-10 DDR2 SDRAM .......................................................................... 1-12 SPI Interface .............................................................................. 1-13 SMC Interface ............................................................................ 1-13 Ethernet Interface ....................................................................... 1-13 USB OTG HS Interface .............................................................. 1-14 CAN Interface ............................................................................ 1-14 UART Interface .......................................................................... 1-15 SD Interface ............................................................................... 1-16 Rotary Encoder Interface ............................................................ 1-16 Temperature Sensor Interface ...................................................... 1-17 Link Ports Interface .................................................................... 1-17 General-Purpose I/O (GPIO) ...................................................... 1-18 JTAG Interface ........................................................................... 1-18 Power-On-Self Test ..................................................................... 1-20 Expansion Interface III ............................................................... 1-20 Power Architecture ..................................................................... 1-21 Power Measurements .................................................................. 1-21 Example Programs ...................................................................... 1-22 Reference Design Information ..................................................... 1-22vi ADSP-BF609 EZ-KIT Lite Evaluation System ManualADSP-BF609 EZ-KIT LITE HARDWARE REFERENCE System Architecture ...................................................................... 2-2 Software-Controlled Switches (SoftConfig) .................................... 2-3 Overview of SoftConfig ........................................................... 2-3SoftConfig on the ADSP-BF609 EZ-KIT LITE ...................... 2-7Programming SoftConfig Switches ........................................... 2-8 Push Buttons and Switches .......................................................... 2-17 JTAG Interface Switches (SW1, SW3–5) ................................ 2-18Boot Mode Select Switch (SW2) ............................................ 2-19IRQ/Flag Enable Switches (SW6–7) ....................................... 2-20Reset Switch (SW8) ............................................................... 2-20Rotary Encoder With Momentary Switch (SW9) .................... 2-20Wake Push Switch (SW10) .................................................... 2-21 Power Jumpers ............................................................................ 2-21 LEDs .......................................................................................... 2-22 GPIO LEDs (LED1–4) ......................................................... 2-23Thermal Limit LED (LED5) ................................................. 2-23Power LED (LED6) ............................................................... 2-23Reset LED (LED7) ................................................................ 2-24SPD LED (LED6) ................................................................. 2-24 Connectors ................................................................................. 2-24 DCE UART Connector (J2) .................................................. 2-25Link Port /JTAG Connectors (J3 and P8) ............................... 2-25JTAG Connector (P1) ........................................................... 2-25 ADSP-BF609 EZ-KIT Lite Evaluation System Manual viiJTAG Connector (ZP1) ......................................................... 2-26Expansion Interface III Connectors (P1A–C, P2A, P3A) ........ 2-26USB Connector (P7) ............................................................. 2-26Power Connector (P18) ......................................................... 2-26CAN Connector (J4) ............................................................ 2-27SD Connector (J5) ................................................................ 2-27Ethernet Connector (J1) ....................................................... 2-27Ethernet Connectors (P16-17) ............................................... 2-27 ADSP-BF609 EZ-KIT LITE BILL OF MATERIALSADSP-BF609 EZ-KIT LITE SCHEMATICTitle Page ..................................................................................... B-1 Processor DDR2 Interface ............................................................ B-2 Processor Signals ........................................................................... B-3 Processor Power and Ground ......................................................... B-4 Temp Sensor, Boot Switch, DSP CLK, USB Conn ......................... B-5 Memory ....................................................................................... B-6 UART0 ........................................................................................ B-7 CAN and Rotary Encoder ............................................................. B-8 Ethernet ....................................................................................... B-9JTAG, Link Port 0 and 1 ........................................................... B-10 Push Buttons, Reset, LEDs ......................................................... B-11 SoftConfig Switches, IO Extender ICs ......................................... B-12 Expansion Interface, Page 1 ........................................................ B-13viii ADSP-BF609 EZ-KIT Lite Evaluation System ManualExpansion Interface, Page 2 ........................................................ B-14 Expansion Interface, Page 3 ........................................................ B-15 Power ........................................................................................ B-16 INDEXADSP-BF609 EZ-KIT Lite Evaluation System Manual ixx ADSP-BF609 EZ-KIT Lite Evaluation System Manual分销商库存信息: ANALOG-DEVICESADZS-BF609-EZLITE ADZS-BF609-EZBRD。
W25Q64中文资料精编版
W25Q64BV出版日期:2010年7月8日- 1 - 版本E64M位与串行闪存双路和四路SPIW25Q64BV- 2 -目录1,一般DESCRIPTION (5)2。
FEATURES (5)3引脚配置SOIC208-MIL.......................................... .. (6)4,焊垫配置WSON8X6-MM.......................................... . (6)5,焊垫配置PDIP300-MIL.......................................... . (7)6引脚说明SOIC208密耳,PDIP300密耳和WSON8X6-MM................................ 7......7引脚配置SOIC300mil的.......................................... .. (8)8引脚SOIC封装说明300-MIL (8)8.1包装Types (9)8.2片选(/CS) (9)8.3串行数据输入,输出和IO(DI,DO和IO0,IO1,IO2,IO3)............................. 9.......8.4写保护(/WP) (9)8.5控股(/HOLD) (9)8.6串行时钟(CLK) (9)9座DIAGRAM (10)10功能DESCRIPTION (11)10.1 SPI OPERATIONS (11)10.1.1标准SPI Instructions (11)10.1.2双SPI Instructions (11)10.1.3四路SPI Instructions (11)10.1.4保持功能 (11)10.2写保护 (12)10.2.1写保护Features (12)11,控制和状态寄存器............................................ .. (13)11.1状态REGISTER (13)11.1.1 BUSY (13)11.1.2写使能锁存(WEL) (13)11.1.3块保护位(BP2,BP1,BP0)..................................... .. (13)11.1.4顶/底块保护(TB)....................................... .................................................. ..1311.1.5部门/块保护(SEC) (13)11.1.6状态寄存器保护(SRP,SRP0)....................................... . (14)11.1.7四路启用(QE) (14)11.1.8状态寄存器内存保护........................................... .. (16)11.2 INSTRUCTIONS (17)11.2.1制造商和设备标识........................................... .. (17)11.2.2指令集表1 (18)W25Q64BV11.2.3指令表2(阅读说明书)....................................... (19)出版日期:2010年7月8日- 3 - 修订版E11.2.4写使能(06h) (20)11.2.5写禁止(04h) (20)11.2.6读状态寄存器1(05H)和读状态寄存器2(35H).............................. (21)11.2.7写状态寄存器(01H)......................................... .................................................. .. (22)11.2.8读取数据(03h) (23)11.2.9快速阅读(0Bh) (24)11.2.10快速读双输出(3BH)........................................ .................................................. 0.25 11.2.11快速读四路输出(6BH)........................................ .. (26)11.2.12快速读双I / O (BBh) (27)11.2.13快速读取四I/ O (EBh) (29)11.2.14八进制字读取四I/ O(E3H)..................................... (31)11.2.15页编程(02h) (33)11.2.16四路输入页编程(32H)........................................ . (34)11.2.17扇区擦除(20H) (35)11.2.1832KB的块擦除(52H) (36)11.2.1964KB的块擦除(D8h) (37)20年2月11日芯片擦除(C7H/ 60h) (38)21年2月11日擦除挂起(75h) (39)22年2月11日擦除恢复(7Ah) (40)23年11月2日掉电(B9h) (41)24年2月11日高性能模式(A3H)......................................... (42)25年2月11日发布掉电或高性能模式/设备ID(ABH) (42)26年2月11日读制造商/设备ID(90H)....................................... . (44)27年2月11日阅读唯一的ID号(4BH)........................................ . (45)28年2月11日读JEDEC的ID (9Fh) (46)29年2月11日连续读取模式复位(FFH或FFFFH)...................................... .. (47)12,电气特性.............................................. (48)12.1绝对最大Ratings (48)12.2操作范围 (48)12.3上电时序和写抑制阈值......................................... (49)12.4直流电气Characteristics (50)12.5 AC测量条件.............................................. .. (51)12.6 AC电气Characteristics (52)12.7 AC电气特性(续)......................................... . (53)12.8串行输出Timing (54)12.9输入Timing (54)12.10持有Timing (54)13包装SPECIFICATION (55)W25Q64BV13.18引脚SOIC208密耳(包装代号SS)..................................... .. (55)- 4 -13.28引脚PDIP300密耳(封装代码DA)..................................... (56)13.38触点WSON8x6毫米(封装代码ZE)....................................... (57)13.416引脚SOIC300密耳(封装代码SF)..................................... . (58)14订货INFORMA TION (59)14.1有效的部件号和顶端标记.......................................... (60)15版本HISTORY (61)W25Q64BV出版日期:2010年7月8日- 5 - 修订版E1概述该W25Q64BV(64M位)串行Flash存储器提供了有限的系统存储解决方案空间,引脚和电源。
AD7874ARZ-REEL中文资料
One Technology Way, P.O. Box 9106, Norwood, M329-4700 Fax: 617/326-8703
元器件交易网
AD7874–SPECIFICATIONS external. All specifications T
Parameter SAMPLE-AND-HOLD Acquisition Time2 to 0.01% Droop Rate2, 3 –3 dB Small Signal Bandwidth3 Aperture Delay2 Aperture Jitter2, 3 Aperture Delay Matching2 SAMPLE-AND-HOLD AND ADC DYNAMIC PERFORMANCE Signal-to-Noise Ratio Total Harmonic Distortion Peak Harmonic or Spurious Noise Intermodulation Distortion 2nd Order Terms 3rd Order Terms Channel-to-Channel Isolation2 DC ACCURACY Resolution Relative Accuracy Differential Nonlinearity Positive Full-Scale Error4 Negative Full-Scale Error4 Full-Scale Error Match Bipolar Zero Error Bipolar Zero Error Match ANALOG INPUTS Input Voltage Range Input Current REFERENCE OUTPUTS REF OUT REF OUT Error @ +25°C TMIN to TMAX REF OUT Temperature Coefficient Reference Load Change REFERENCE INPUT Input Voltage Range Input Current Input Capacitance3 LOGIC INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IIN Input Capacitance, CIN3 LOGIC OUTPUTS Output High Voltage, VOH Output Low Voltage, VOL DB0–DB11 Floating-State Leakage Current Floating-State Output Capacitance Output Coding POWER REQUIREMENTS VDD VSS IDD ISS Power Dissipation A Version B Version S Version Units 2 1 500 0 40 200 4 2 1 500 0 40 200 4 2 2 500 0 40 200 4 µs max mV/ms max kHz typ ns min ns max ps typ ns max
ADS947中文资料
The low-cost ADS-947 is a 14-bit, 10MHz sampling A/D converter. This device accurately samples full-scale input signals up to Nyquist frequencies with no missing codes. Excellent differential nonlinearity error (DNL), signal-to-noise ratio (SNR), and total harmonic distortion (THD) make the ADS-947 the ideal choice for both time-domain (CCD/FPA imaging, scanners, process control) and frequency-domain (radar, telecommunications, spectrum analysis) applications.
Requiring only +5V and –5.2V supplies, the ADS-947 typically dissipates just 2 Watts. The device is offered with a bipolar input range of ±2V. Models are available for use in either commercial (0 to +70°C) or military (–55 to +125°C) operating
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AD8310ARM-REEL7资料
Fast, Voltage-Out DC–440 MHz,95 dB Logarithmic AmplifierAD8310 Rev.EInformation furnished by Analog Devices is believed to be accurate and reliable.However, no responsibility is assumed by Analog Devices for its use, nor for anyinfringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: Fax: 781.461.3113© 2005 Analog Devices, Inc. All rights reserved.FEATURESMultistage demodulating logarithmic amplifierVoltage output, rise time <15 nsHigh current capacity: 25 mA into grounded R L95 dB dynamic range: −91 dBV to +4 dBVSingle supply of 2.7 V min at 8 mA typDC–440 MHz operation, ±0.4 dB linearitySlope of +24 mV/dB, intercept of −108 dBVHighly stable scaling over temperatureFully differential dc-coupled signal path100 ns power-up time, 1 mA sleep current APPLICATIONSConversion of signal level to decibel formTransmitter antenna power measurementReceiver signal strength indication (RSSI)Low cost radar and sonar signal processingNetwork and spectrum analyzersSignal-level determination down to 20 HzTrue-decibel ac mode for multimetersGENERAL DESCRIPTIONThe AD8310 is a complete, dc−440 MHz demodulating logarithmic amplifier (log amp) with a very fast voltage mode output, capable of driving up to 25 mA into a grounded load in under 15 ns. It uses the progressive compression (successive detection) technique to provide a dynamic range of up to 95 dB to ±3 dB law conformance or 90 dB to a ±1 dB error bound up to 100 MHz. It is extremely stable and easy to use, requiring no significant external components. A single-supply voltage of 2.7 V to 5.5 V at 8 mA is needed, corresponding to a power consumption of only 24 mW at 3 V. A fast-acting CMOS-compatible enable pin is provided.Each of the six cascaded amplifier/limiter cells has a small-signal gain of 14.3 dB, with a −3 dB bandwidth of 900 MHz.A total of nine detector cells are used to provide a dynamic range that extends from −91 dBV (where 0 dBV is defined as the amplitude of a 1 V rms sine wave), an amplitude of about ±40 μV, up to +4 dBV (or ±2.2 V). The demodulated outputis accurately scaled, with a log slope of 24 mV/dB and an intercept of −108 dBV. The scaling parameters are supply-and temperature-independent.FUNCTIONAL BLOCK DIAGRAMSUPPLY+INPUT–INPUTCOMMON184-1Figure 1.The fully differential input offers a moderately high impedance (1 kΩ in parallel with about 1 pF). A simple network can match the input to 50 Ω and provide a power sensitivity of −78 dBm to+17 dBm. The logarithmic linearity is typically within ±0.4 dBup to 100 MHz over the central portion of the range, but it is somewhat greater at 440 MHz. There is no minimum frequency limit; the AD8310 can be used down to low audio frequencies. Special filtering features are provided to support this wide range.The output voltage runs from a noise-limited lower boundary of 400 mV to an upper limit within 200 mV of the supply voltagefor light loads. The slope and intercept can be readily altered using external resistors. The output is tolerant of a wide varietyof load conditions and is stable with capacitive loads of 100 pF. The AD8310 provides a unique combination of low cost, small size, low power consumption, high accuracy and stability, high dynamic range, a frequency range encompassing audio to UHF, fast response time, and good load-driving capabilities, making this product useful in numerous applications that require the reduction of a signal to its decibel equivalent.The AD8310 is available in the industrial temperature range of−40°C to +85°C in an 8-lead MSOP package.AD8310Rev. E | Page 2 of 24TABLE OF CONTENTSSpecifications.....................................................................................3 Absolute Maximum Ratings............................................................4 ESD Caution..................................................................................4 Pin Configuration and Function Descriptions.............................5 Typical Performance Characteristics.............................................6 Theory of Operation........................................................................9 Progressive Compression............................................................9 Slope and Intercept Calibration................................................10 Offset Control.............................................................................10 Product Overview...........................................................................11 Enable Interface..........................................................................11 Input Interface............................................................................11 Offset Interface...........................................................................12 Output Interface.........................................................................12 Using the AD8310..........................................................................14 Basic Connections......................................................................14 Transfer Function in Terms of Slope and Intercept...............15 dBV vs. dBm...............................................................................15 Input Matching...........................................................................15 Narrow-Band Matching............................................................16 General Matching Procedure....................................................16 Slope and Intercept Adjustments.............................................17 Increasing the Slope to a Fixed Value......................................17 Output Filtering..........................................................................18 Lowering the High-Pass Corner Frequency of the OffsetCompensation Loop..................................................................18 Applications.....................................................................................19 Cable-Driving.............................................................................19 DC-Coupled Input.....................................................................19 Evaluation Board............................................................................20 Outline Dimensions.......................................................................22 Ordering Guide.. (22)REVISION HISTORY6/05—Rev. D to Rev. EChanges to Figure 6..........................................................................6 Change to Basic Connections Section.........................................14 Changes to Equation 10.................................................................17 Changes to Ordering Guide..........................................................22 10/04—Rev. C to Rev. DFormat Updated..................................................................Universal Typical Performance Characteristics Reordered..........................6 Changes to Figures 41 and 42.......................................................20 7/03—Rev. B to Rev. CReplaced TPC 12...............................................................................5 Change to DC-Coupled Input Section........................................14 Replaced Figure 20.........................................................................15 Updated Outline Dimensions.......................................................16 2/03—Rev. A to Rev. BChange to Evaluation Board Section...........................................15 Change to Table III.........................................................................16 Updated Outline Dimensions.......................................................16 1/00—Rev. 0 to Rev. A10/99—Revision 0: Initial VersionAD8310SPECIFICATIONST A = 25°C, V S = 5 V, unless otherwise noted.Table 1.Parameter Conditions Min Typ Max Unit INPUT STAGE Inputs INHI, INLOMaximum Input1Single-ended, p-p ±2.0 ±2.2 V4 dBV Equivalent Power in 50 Ω Termination resistor of 52.3 Ω 17 dBmDifferential drive, p-p 20 dBmNoise Floor Terminated 50 Ω source 1.28 nV/√Hz Equivalent Power in 50 Ω 440 MHz bandwidth −78 dBm Input Resistance From INHI to INLO 800 1000 1200 ΩInput Capacitance From INHI to INLO 1.4 pFDC Bias Voltage Either input 3.2 V LOGARITHMIC AMPLIFIER Output VOUT±3 dB Error Dynamic Range From noise floor to maximum input 95 dB Transfer Slope 10 MHz ≤ f ≤ 200 MHz 22 24 26 mV/dBOvertemperature, –40°C < T A < +85°C 20 26 mV/dB Intercept (Log Offset)210 MHz ≤ f ≤ 200 MHz −115 −108 −99 dBVEquivalent dBm (re 50 Ω) −102 −95 −86 dBmOvertemperature, −40°C ≤ T A ≤ +85°C −120 −96 dBVEquivalent dBm (re 50 Ω) −107 −83 dBmTemperature sensitivity −0.04 dB/°C Linearity Error (Ripple) Input from –88 dBV (–75 dBm) to +2 dBV (+15 dBm) ±0.4 dBOutput Voltage Input = –91 dBV (–78 dBm) 0.4 VInput = 9 dBV (22 dBm) 2.6 V Minimum Load Resistance, R L100 Ω Maximum Sink Current 0.5 mAOutput Resistance 0.05 ΩVideo Bandwidth 25 MHzRise Time (10% to 90%) Input Level = −43 dBV (−30 dBm), R L ≥ 402 Ω, C L ≤ 68 pF 15 nsInput Level = −3 dBV (+10 dBm), R L ≥ 402 Ω, C L ≤ 68 pF 20 nsFall Time (90% to 10%) Input Level = −43 dBV (−30 dBm), R L ≥ 402 Ω, C L ≤ 68 pF 30 nsInput Level = −3 dBV (+10 dBm), R L ≥ 402 Ω, C L ≤ 68 pF 40 nsOutput Settling Time to 1% Input Level = −13 dBV (0 dBm), R L ≥ 402 Ω, C L ≤ 68 pF 40 ns POWER INTERFACESSupply Voltage, VPOS 2.7 5.5 V Quiescent Current Zero-signal 6.5 8.0 9.5 mA Overtemperature −40°C < T A < +85°C 5.5 8.5 10 mA Disable Current 0.05 μALogic Level to Enable Power High condition, −40°C < T A < +85°C 2.3 VInput Current when High 3 V at ENBL 35 μALogic Level to Disable Power Low condition, −40°C < T A < +85°C 0.8 V1 The input level is specified in dBV, because logarithmic amplifiers respond strictly to voltage, not power. 0 dBV corresponds to a sinusoidal single-frequency input of1 V rms. A power level of 0 dBm (1 mW) in a 50 Ω termination corresponds to an input of 0.2236 V rms. Therefore, the relationship between dBV and dBm is a fixedoffset of 13 dBm in the special case of a 50 Ω termination.2 Guaranteed but not tested; limits are specified at six sigma levels.Rev. E | Page 3 of 24AD8310Rev. E | Page 4 of 24ABSOLUTE MAXIMUM RATINGSTable 2.Parameter Value Supply Voltage, V S 7.5 V Input Power (re 50 Ω), Single-Ended 18 dBm Differential Drive 22 dBm Internal Power Dissipation 200 mW θJA 200°C/W Maximum Junction Temperature 125°COperating Temperature Range −40°C to +85°C Storage Temperature Range−65°C to +150°C Lead Temperature (Soldering 60 sec)300°CStresses above those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ESD CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performancedegradation or loss of functionality.AD8310Rev. E | Page 5 of 24PIN CONFIGURATION AND FUNCTION DESCRIPTIONS01084-002INLOCOMM OFLT VOUTFigure 2. Pin ConfigurationTable 3. Pin Function DescriptionsPin No. Mnemonic Function1 INLO One of Two Balanced Inputs. Biased roughly to VPOS/2.2 COMM Common Pin. Usually grounded.3 OFLT Offset Filter Access. Nominally at about 1.75 V.4 VOUT Low Impedance Output Voltage. Carries a 25 mA maximum load. 5 VPOS Positive Supply. 2.7 V to 5.5 V at 8 mA quiescent current.6 BFIN Buffer Input. Used to lower post-detection bandwidth.7 ENBL CMOS Compatible Chip Enable. Active when high. 8INHISecond of Two Balanced Inputs.AD8310Rev. E | Page 6 of 24TYPICAL PERFORMANCE CHARACTERISTICSINPUT LEVEL (dBV)3.00–12020–100(–87dBm)R S S I O U T P U T (V )–80–60–40–200(+13dBm)2.52.01.51.00.501084-011Figure 3. RSSI Output vs. Input Level, 100 MHz Sine Input at T A = −40°C,+25°C, and +85°C, Single-Ended InputINPUT LEVEL (dBV)3.0–120–100(–87dBm)R S S I O U T P U T (V )–80–60–40–20(+13dBm)202.52.01.51.00.5001084-012Figure 4. RSSI Output vs. Input Level at T A = 25°C for Frequencies of 10 MHz, 50 MHz, and 100 MHzINPUT LEVEL (dBV)3.00–12020–100(–87dBm)R S S I O U T P U T (V )–80–60–40–200(+13dBm)2.52.01.51.00.501084-013Figure 5. RSSI Output vs. Input Level at T A = 25°C for Frequencies of 200 MHz, 300 MHz, and 440 MHz01084-043P IN (dBm)R S S I O U T P U T (V )E R R O R (d B )Figure 6. Log Linearity of RSSI Output vs. Input Level, 100 MHz Sine Input at T A = −40°C, +25°C, and +85°CINPUT LEVEL (dBV)–12020–100(–87dBm)E R R O R (d B )–80–60–40–20(+13dBm)01084-015Figure 7. Log Linearity of RSSI Output vs. Input Level, at T A = 25°C, for Frequencies of 10 MHz, 50 MHz, and 100 MHzINPUT LEVEL (dBV)–12020–100(–87dBm)E R R O R (d B )–80–60–40–20(+13dBm)01084-016Figure 8. Log Linearity of RSSI Output vs. Input Level at T A = 25°Cfor Frequencies of 200 MHz, 300 MHz, and 440 MHzAD8310Rev. E | Page 7 of 2401084-009Figure 9. Small-Signal AC Response of RSSI Output with External BFINCapacitance of 100 pF, 3300 pF, and 0.01 μFFigure 10. Large-Signal RSSI Pulse Response with C L = 100 pFand RL = 100 Ω, 154 Ω, and 200 Ω01084-006Figure 11. RSSI Pulse Response with R L = 402 Ω and C L = 68 pF,for Inputs Stepped from 0 dBV to −33 dBV, −23 dBV, −13 dBV, and −3 dBV 01084-010Figure 12. Small-Signal RSSI Pulse Responsewith R L = 402 Ω and C L = 68 pF01084-007Figure 13. Large-Signal RSSI Pulse Response with R L = 100 Ωand C L = 33 pF, 68 pF, and 100 pF01084-008Figure 14. Small-Signal RSSI Pulse Response with R L = 50 Ω and Back Termination of 50 Ω (Total Load = 100 Ω)AD8310Rev. E | Page 8 of 24ENABLE VOLTAGE (V)1000.000010.52.50.7S U P P L Y C U R R E N T (m A )0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.31010.10.010.0010.000101084-003Figure 15. Supply Current vs. Enable Voltage at T A = −40°C, +25°C, and +85°CFREQUENCY (MHz)3029201100010R S S I S L O P E(m V /d B )100242322212625282701084-017Figure 16. RSSI Slope vs. FrequencySLOPE (mV/dB)21.522.0C O U N T22.523.023.524.024.501084-019Figure 17. Transfer Slope Distribution, V S= 5 V, Frequency = 100 MHz, 25°C01084-004Figure 18. Power-On/Off Response Time with RF Input of −83 dBV to −3 dBVFREQUENCY (MHz)–99–101–1191100010R S S I I N T E R C E P T (d B V )100–111–113–115–117–107–109–103–10501084-018Figure 19. RSSI Intercept vs. FrequencyINTERCEPT (dBV)1240–115–113C O U N T210861416–111–109–107–105–103–101–99–971820222401084-020Figure 20. Intercept Distribution V S = 5 V, Frequency = 100 MHz, 25°CAD8310Rev. E | Page 9 of 24THEORY OF OPERATIONLogarithmic amplifiers perform a more complex operation than classical linear amplifiers, and their circuitry is significantlydifferent. A good grasp of what log amps do and how they do itcan help users avoid many pitfalls in their applications. For a complete discussion of the theory, see the AD8307 data sheet. The essential purpose of a log amp is not to amplify (though amplification is needed internally), but to compress a signal of wide dynamic range to its decibel equivalent. It is, therefore, a measurement device. An even better term might be logarithmic converter, because the function is to convert a signal from one domain of representation to another via a precise nonlinear transformation:⎟⎟⎠⎞⎜⎜⎝⎛=X IN Y OUT V V V V log (1) where:V OUT is the output voltage. V Y is the slope voltage. The logarithm is usually taken to base ten, in which case V Y is also the volts-per-decade. V IN is the input voltage. V X is the intercept voltage. Log amps implicitly require two references (here V X and V Y )that determine the scaling of the circuit. The accuracy of a log amp cannot be any better than the accuracy of its scaling reference s . In the AD8310, these are provided by a band gapreference.VFigure 21. General Form of the Logarithmic FunctionWhile Equation 1, plotted in Figure 21, is fundamentally correct, a different formula is appropriate for specifying the calibration attributes or demodulating log amps like theAD8310, operating in RF applications with a sine wave input.()O IN SLOPE OUT P P V V −= (2)where:V OUT is the demodulated and filtered baseband (video or RSSI) output.V SLOPE is the logarithmic slope, now expressed in V/dB (25 mV/dB for the AD8310).P IN is the input power, expressed in dB relative to some reference power level.P O is the logarithmic intercept, expressed in dB relative to the same reference level.A widely used reference in RF systems is dB above 1 mW in 50 Ω, a level of 0 dBm. Note that the quantity (P IN – P O ) is dB. The logarithmic function disappears from the formula, because the conversion has already been implicitly performed in stating the input in decibels. This is strictly a concession to popular convention. Log amps manifestly do not respond to power(tacitly, power absorbed at the input), but rather to input voltage. The input is specified in dBV (decibels with respect to 1 V rms) throughout this data sheet. This is more precise, although still incomplete, because the signal waveform is also involved. Many users specify RF signals in terms of power(usually in dBm/50 Ω), and this convention is used in this datasheet when specifying the performance of the AD8310.PROGRESSIVE COMPRESSION High speed, high dynamic-range log amps use a cascade ofnonlinear amplifier cells to generate the logarithmic functionas a series of contiguous segments, a type of piecewise linear technique. The AD8310 employs six cells in its main signal path, each having a small-signal gain of 14.3 dB (×5.2) and a −3 dB bandwidth of about 900 MHz. The overall gain is about 20,000 (86 dB), and the overall bandwidth of the chain is approximately 500 MHz, resulting in a gain-bandwidth product(GBW) of 10,000 GHz, about a million times that of a typical op amp. This very high GBW is essential to accurate operationunder small-signal conditions and at high frequencies. The AD8310 exhibits a logarithmic response down to inputs as small as 40 μV at 440 MHz.Progressive compression log amps either provide a baseband video response or accept an RF input and demodulate thissignal to develop an output that is essentially the envelope of the input represented on a logarithmic or decibel scale. TheAD8310 is the latter kind. Demodulation is performed in a total of nine detector cells. Six are associated with the amplifier stages, and three are passive detectors that receive a progres-sively attenuated fraction of the full input. The maximum signal frequency can be 440 MHz, but, because all the gain stages are dc-coupled, operation at very low frequencies is possible.AD8310Rev. E | Page 10 of 24SLOPE AND INTERCEPT CALIBRATIONAll monolithic log amps from Analog Devices use precision design techniques to control the logarithmic slope and intercept. The primary source of this calibration is a pair of accurate voltage references that provide supply- andtemperature-independent scaling. The slope is set to 24 mV/dB by the bias chosen for the detector cells and the subsequent gain of the postdetector output interface. With this slope, the full 95 dB dynamic range can be easily accommodated within the output swing capacity, when operating from a 2.7 V supply. Intercept positioning at −108 dBV (−95 dBm re 50 Ω) has likewise been chosen to provide an output centered in the available voltage range.Precise control of the slope and intercept results in a log amp with stable scaling parameters, making it a true measurement device as, for example, a calibrated received signal strength indicator (RSSI). In this application, the input waveform is invariably sinusoidal. The input level is correctly specified in dBV . It can alternatively be stated as an equivalent power, in dBm, but in this case, it is necessary to specify the impedance in which this power is presumed to be measured. In RF practice, it is common to assume a reference impedance of 50 Ω, in which 0 dBm (1 mW) corresponds to a sinusoidal amplitude of 316.2 mV (223.6 mV rms). However, the power metric is correct only when the input impedance is lowered to 50 Ω, either by a termination resistor added across INHI and INLO, or by the use of a narrow-band matching network.Note that log amps do not inherently respond to power, but to the voltage applied to their input. The AD8310 presents a nominal input impedance much higher than 50 Ω (typically 1 kΩ at low frequencies). A simple input matching network can considerably improve the power sensitivity of this type of log amp. This increases the voltage applied to the input and, therefore, alters the intercept. For a 50 Ω reactive match, the voltage gain is about 4.8, and the whole dynamic range moves down by 13.6 dB. The effective intercept is a function of wave-form. For example, a square-wave input reads 6 dB higher than a sine wave of the same amplitude, and a Gaussian noise input reads 0.5 dB higher than a sine wave of the same rms value. OFFSET CONTROLIn a monolithic log amp, direct coupling is used between the stages for several reasons. First, it avoids the need for coupling capacitors, which typically have a chip area at least as large as that of a basic gain cell, considerably increasing die size. Second, the capacitor values predetermine the lowest frequency at which the log amp can operate. For moderate values, this can be as high as 30 MHz, limiting the application range. Third, the parasitic back-plate capacitance lowers the bandwidth of the cell, further limiting the scope of applications.However, the very high dc gain of a direct-coupled amplifier raises a practical issue. An offset voltage in the early stages of the chain is indistinguishable from a real signal. If it were as high as 400 μV , it would be 18 dB larger than the smallest ac signal (50 μV), potentially reducing the dynamic range by this amount. This problem can be averted by using a global feedback path from the last stage to the first, which corrects this offset in a similar fashion to the dc negative feedback applied around an op amp. The high frequency components of the feedback signal must, of course, be removed to prevent a reduction of the HF gain in the forward path.An on-chip filter capacitor of 33 pF provides sufficient suppres-sion of HF feedback to allow operation above 1 MHz. The −3 dB point in the high-pass response is at 2 MHz, but theusable range extends well below this frequency. To further lower the frequency range, an external capacitor can be added at OFLT (Pin 3). For example, 300 pF lowers it by a factor of 10. Operation at low audio frequencies requires a capacitor of about 1 μF. Note that this filter has no effect for input levels well above the offset voltage, where the frequency range would extend down to dc (for a signal applied directly to the input pins). The dc offset can optionally be nulled by adjusting the voltage on the OFLT pin (see the Applications section).PRODUCT OVERVIEWThe AD8310 has six main amplifier/limiter stages. These six cells and their and associated g m styled full-wave detectors handle the lower two-thirds of the dynamic range. Three top-end detectors, placed at 14.3 dB taps on a passive attenuator, handle the upper third of the 95 dB range. The first amplifier stage provides a low noise spectral density (1.28 nV/√Hz). Biasing for these cells is provided by two references: onedetermines their gain, and the other is a band gap circuit that determines the logarithmic slope and stabilizes it against supply and temperature variations. The AD8310 can be enabled or disabled by a CMOS-compatible level at ENBL (Pin 7). The differential current-mode outputs of the nine detectors are summed and then converted to single-sided form, nominally scaled 2 μA/dB. The output voltage is developed by applying this current to a 3 kΩ load resistor followed by a high speed gain-of-four buffer amplifier, resulting in a logarithmic slope of 24 mV/dB (480 mV/decade) at VOUT (Pin 4). The unbuffered voltage can be accessed at BFIN (Pin 6), allowing certain functional modifications such as the addition of an external postdemodulation filter capacitor and the alteration or adjustment of slope and intercept.–INPUT01084-022Figure 22. Main Features of the AD8310The last gain stage also includes an offset-sensing cell. This generates a bipolarity output current, if the main signal path exhibits an imbalance due to accumulated dc offsets. This current is integrated by an on-chip capacitor that can beincreased in value by an off-chip component at OFLT (Pin 3). The resulting voltage is used to null the offset at the output of the first stage. Because it does not involve the signal inputconnections, whose ac-coupling capacitors otherwise introduce a second pole into the feedback path, the stability of the offset correction loop is assured.The AD8310 is built on an advanced, dielectrically isolated, complementary bipolar process. In the following interface diagrams shown in Figure 23 to Figure 26, resistors labeled as R are thin-film resistors that have a low temperature coefficient of resistance (TCR) and high linearity under large-signal conditions. Their absolute tolerance is typically within ±20%.Similarly, capacitors labeled as C have a typical tolerance of ±15% and essentially zero temperature or voltage sensitivity. Most interfaces have additional small junction capacitances associated with them, due to active devices or ESD protection, which might not be accurate or stable. Component numbering in these interface diagrams is local.ENABLE INTERFACEThe chip-enable interface is shown in Figure 23. The currents in the diode-connected transistors control the turn-on and turn-off states of the band gap reference and the bias generator. They are a maximum of 100 μA when ENBL is taken to 5 V under worst-case conditions. For voltages below 1 V , the AD8310 is disabled and consumes a sleep current of less than 1 μA. When tied to the supply or a voltage above 2 V , it is fully enabled. The internal bias circuitry is very fast (typically <100 ns for either off or on). In practice, however, the latency period before the log amp exhibits its full dynamic range is more likely to be limited by factors relating to the use of ac-coupling at the input or the settling of the offset-control loop (see the following sections).01084-023Figure 23. Enable InterfaceINPUT INTERFACEFigure 24 shows the essentials of the input interface. C P and C M are parasitic capacitances, and C D is the differential input capacitance, largely due to Q1 and Q2. In most applications, both input pins are ac-coupled. The S switches close whenenable is asserted. When disabled, bias current I E is shut off and the inputs float; therefore, the coupling capacitors remain charged. If the log amp is disabled for long periods, small leakage currents discharge these capacitors. Then, if they are poorly matched, charging currents at power-up can generate a transient input voltage that can block the lower reaches of the dynamic range until it becomes much less than the signal. A single-sided signal can be applied via a blocking capacitor to either Pin 1 or Pin 8, with the other pin ac-coupled to ground. Under these conditions, the largest input signal that can be handled is 0 dBV (a sine amplitude of 1.4 V) when using a 3 V supply; a 5 dBV input (2.5 V amplitude) can be handled with a 5 V supply. When using a fully balanced drive, this maximum input level is permissible for supply voltages as low as 2.7 V . Above 10 MHz, this is easily achieved using an LC matching network. Such a network, having an inductor at the input, usefully eliminates the input transient noted above.。
AD7324BRUZ;AD7324BRUZ-REEL;AD7324BRUZ-REEL7;中文规格书,Datasheet资料
12-bit plus sign
AD7323 500 00 kSPS 12-bit plus sign
AD7321 500 kSPS
12-bit plus sign
Number of Channels 8 8 8 4 2 2
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
3. 1 MSPS serial interface. SPI®-/QSPI™-/DSP-/MICROWIRE™compatible interface.
4. Low power, 31 mW maximum, at 1 MSPS throughput rate.
5. Channel sequencer.
Table 1. Similar Products Selection Table
Device Throughput
Number Rate
Number of bits
AD7329 1000 kSPS 12-bit plus sign
AD7328 1000 kSPS 12-bit plus sign
AD7327 500 kSPS
ESD Caution.................................................................................. 8 Pin Configuration and Function Description .............................. 9 Typical Performance Characteristics ........................................... 10 Terminology .................................................................................... 14 Theory of Operation ...................................................................... 16
ADG1219BRJZ-REEL7中文资料
charge injection over the entire signal range of the device. iCMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and batterypowered instruments.
FUNCTIONAL BLOCK DIAGRAM
ADG1219
SA
SB
D
DECODER
06575-001
IN EN SWITCHES SHOWN FOR A LOGIC 0 INPUT
Figure 1.
APPLICATIONS
Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems
Ordering Guide .......................................................................... 15
Rev. 0 | Page 2 of 16
元器件交易网
ADG1219
SPECIFICATIONS
元器件交易网
ADG1219
TABLE OF CONTENTS
Features .............................................................................................. 1 Applications....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Revision History ............................................................................... 2 Specifications..................................................................................... 3
AD5757中文手册
AD5757
产品特性
16位分辨率和单调性 用于热管理或外部PMOS模式的动态电源控制 电流输出范围:0 mA至20 mA、4 mA至20 mA或0 mA至 24 mA 总不可调整误差(TUE):±0.05%(最大值) 用户可编程失调与增益 片内诊断 片内基准电压源(±10 ppm/°C,最大值) 温度范围:−40°C至+105°C 各通道均有一个相应的CHART引脚,因此HART信号可以 耦合到AD5757的电流输出端。 该器件采用多功能三线式串行接口,能够以最高30 MHz 的时钟速率工作,并与标准SPI、QSPI™、MICROWIRE™、 DSP 和 微 控 制 器 接 口 标 准 兼 容 。 该 接 口 还 提 供 可 选 的 CRC-8分组错误校验功能,以及用于监控接口活动的看门 狗定时器。
ADI中文版数据手册是英文版数据手册的译文,敬请谅解翻译中可能存在的语言组织或翻译错误,ADI不对翻译中存在的差异或由此产生的错误负责。如需确认任何词语的准确性,请参考ADI提供 的最新英文版数据手册。
AD5757 目录
产品特性 ......................................................................................... 1 应用 .................................................................................................. 1 概述 .......................................................................
AD8572AR-REEL7资料
Zero-Drift, Single-Supply, Rail-to-RailInput/Output Operational AmplifiersAD8571/AD8572/AD8574 Rev. BInformation furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. O ne Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 ©2006 Analog Devices, Inc. All rights reserved.FEATURESLow offset voltage: 1 μVInput offset drift: 0.005 μV/°CRail-to-rail input and output swing5 V/2.7 V single-supply operationHigh gain, CMRR, PSRR: 130 dBUltralow input bias current: 20 pALow supply current: 750 μA/op ampOverload recovery time: 50 μsNo external capacitors requiredAPPLICATIONSTemperature sensorsPressure sensorsPrecision current sensingStrain gage amplifiersMedical instrumentationThermocouple amplifiersGENERAL DESCRIPTIONThis family of amplifiers has ultralow offset, drift, and bias current. The AD8571, AD8572, and AD8574 are single, dual, and quad amplifiers, respectively, featuring rail-to-rail input and output swings. All are guaranteed to operate from 2.7 V to 5 V single supply.The AD857x family provides benefits previously found only in expensive auto-zeroing or chopper-stabilized amplifiers. Using Analog Devices, Inc. topology, these zero-drift amplifiers combine low cost with high accuracy. (No external capacitors are required.) Using a patented spread-spectrum auto-zero technique, the AD857x family eliminates the intermodulation effects from interaction of the chopping function with the signal frequency in ac applications.With an offset voltage of only 1 μV and drift of 0.005 μV/°C, the AD857x family is perfectly suited for applications where error sources cannot be tolerated. Position and pressure sensors, medical equipment, and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. Many more systems require the rail-to-rail input and output swings provided by the AD857x family.V+OUT ANCNC–IN A+IN AV–NC114-1NC = NO CONNECTNC–IN A+IN AV–114-4Figure 1. 8-Lead MSOP(RM Suffix)Figure 2. 8-Lead SOIC(R Suffix)–IN A+IN AV–OUT B–IN B+IN BOUT A V+114-2–IN A+IN AV–OUT B–IN B+IN BOUT A V+114-5 (RU Suffix)Figure 4. 8-Lead SOIC(R Suffix)OUT A–IN A+IN AV++IN B–IN BOUT B114-3OUT A–IN A+IN AV++IN B–IN BOUT B114-6Figure 5. 14-Lead TSSOP(RU Suffix)Figure 6. 14-Lead SOIC(R Suffix)The AD857x family is specified for the extended industrial/ automotive (−40°C to +125°C) temperature range. The AD8571 single amplifier is available in 8-lead MSOP and narrow 8-lead SOIC packages. The AD8572 dual amplifier is available in8-lead narrow SOIC and 8-lead TSSOP surface mount packages. The AD8574 quad amplifier is available in narrow 14-lead SOIC and 14-lead TSSOP packages.AD8571/AD8572/AD8574Rev. B | Page 2 of 24TABLE OF CONTENTSFeatures..............................................................................................1 Applications.......................................................................................1 General Description.........................................................................1 Pin Configurations...........................................................................1 Revision History...............................................................................2 Specifications.....................................................................................3 5 V Electrical Characteristics......................................................3 2.7 V Electrical Characteristics...................................................4 Absolute Maximum Ratings............................................................5 Thermal Characteristics..............................................................5 ESD Caution..................................................................................5 Typical Performance Characteristics.............................................6 Functional Description..................................................................14 Amplifier Architecture..............................................................14 Basic Auto-Zero Amplifier Theory..........................................14 Auto-Zero Phase.........................................................................14 Amplification Phase...................................................................15 High Gain, CMRR, PSRR..........................................................16 Maximizing Performance T hrough Proper Layout................16 1/f Noise Characteristics...........................................................17 Random Auto-Zero Correction Eliminates Intermodulation Distortion....................................................................................17 Broadband and External Resistor Noise Considerations..........18 Output Overdrive Recovery......................................................18 Input Overvoltage Protection...................................................18 Output Phase Reversal...............................................................18 Capacitive Load Drive...............................................................19 Power-Up Behavior....................................................................19 Applications.....................................................................................20 5 V Precision Strain Gage Circuit............................................20 3 V Instrumentation Amplifier................................................20 High Accuracy Thermocouple Amplifier...............................20 Precision Current Meter............................................................21 Precision Voltage Comparator..................................................21 Outline Dimensions.......................................................................22 Ordering Guide.. (23)REVISION HISTORY09/06—Rev. A to Rev. BUpdated Format..................................................................Universal Renumbered Figures..........................................................Universal Changes to Figure 50......................................................................14 Changes to Figure 51......................................................................15 Changes to Figure 66......................................................................21 Updated Outline Dimensions.......................................................22 Changes to Ordering Guide..........................................................23 07/03—Rev. 0 to Rev. ARenumbered Figures..........................................................Universal Changes to Ordering Guide.............................................................4 Change to Figure 15.......................................................................16 Updated Outline Dimensions. (19)10/99—Revision 0: Initial VersionAD8571/AD8572/AD8574Rev. B | Page 3 of 24SPECIFICATIONS5 V ELECTRICAL CHARACTERISTICSV S = 5 V , V CM = 2.5 V , V O = 2.5 V , T A = 25°C, unless otherwise noted. Table 1.Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V OS 1 5 μV −40°C ≤ T A ≤ +125°C 10 μV Input Bias Current I B 10 50 pA −40°C ≤ T A ≤ +125°C 1.0 1.5 nA Input Offset Current I OS 20 70 pA −40°C ≤ T A ≤ +125°C 150 200 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 5 V 120 140 dB −40°C ≤ T A ≤ +125°C 115 130 dBLarge Signal Voltage Gain 1A VO R L = 10 kΩ, V O = 0.3 V to 4.7 V 125 145 dB −40°C ≤ T A ≤ +125°C 120 135 dB Offset Voltage Drift ∆V OS /∆T −40°C ≤ T A ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH R L = 100 kΩ to GND 4.99 4.998 V −40°C to +125°C 4.99 4.997 V R L = 10 kΩ to GND 4.95 4.98 V −40°C to +125°C 4.95 4.975 V Output Voltage Low V OL R L = 100 kΩ to V+ 1 10 mV −40°C to +125°C 2 10 mV R L = 10 kΩ to V+ 10 30 mV −40°C to +125°C 15 30 mV Short-Circuit Limit I SC ±25 ±50 mA −40°C to +125°C ±40 mA Output Current I O ±30 mA −40°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V S = 2.7 V to 5.5 V 120 130 dB −40°C ≤ T A ≤ +125°C 115 130 dB Supply Current/Amplifier I SY V O = 0 V 850 975 μA −40°C ≤ T A ≤ +125°C 1000 1075 μA DYNAMIC PERFORMANCE Slew Rate SR R L = 10 kΩ 0.4 V/μs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise e n p-p 0 Hz to 10 Hz 1.3 μV p-p e n p-p 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density e n f = 1 kHz 51 nV/√Hz Current Noise Density i n f = 10 Hz 2 fA/√Hz1Gain testing is dependent upon test bandwidth.AD8571/AD8572/AD8574Rev. B | Page 4 of 242.7 V ELECTRICAL CHARACTERISTICS V S = 2.7 V , V CM = 1.35 V , V O = 1.35 V , T A = 25°C, unless otherwise noted.Table 2.Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage V OS 1 5 μV −40°C ≤ T A ≤ +125°C 10 μV Input Bias Current I B 10 50 pA −40°C ≤ T A ≤ +125°C 1.0 1.5 nA Input Offset Current I OS 10 50 pA −40°C ≤ T A ≤ +125°C 150 200 pA Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V CM = 0 V to 2.7 V 115 130 dB −40°C ≤ T A ≤ +125°C 110 130 dB Large Signal Voltage Gain 1A VO R L = 10 kΩ, V O = 0.3 V to 2.4 V 110 140 dB −40°C ≤ T A ≤ +125°C 105 130 dB Offset Voltage Drift ∆V OS /∆T −40°C ≤ T A ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High V OH R L = 100 kΩ to GND 2.685 2.697 V −40°C to +125°C 2.685 2.696 V R L = 10 kΩ to GND 2.67 2.68 V −40°C to +125°C 2.67 2.675 V Output Voltage Low V OL R L = 100 kΩ to V+ 1 10 mV −40°C to +125°C 2 10 mV R L = 10 kΩ to V+ 10 20 mV −40°C to +125°C 15 20 mV Short-Circuit Limit I SC ±10 ±15 mA −40°C to +125°C ±10 mA Output Current I O ±10 mA −40°C to +125°C ±5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V S = 2.7 V to 5.5 V 120 130 dB −40°C ≤ T A ≤ +125°C 115 130 dB Supply Current/Amplifier I SY V O = 0 V 750 900 μA −40°C ≤ T A ≤ +125°C 950 1000 μA DYNA MIC PERFOR MANCE Slew Rate SR R L = 10 kΩ 0.5 V/μs Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz NOISE PERFOR MANCE Voltage Noise e n p-p 0 Hz to 10 Hz 2.0 μV p-p Voltage Noise Density e n f = 1 kHz 94 nV/√Hz Current Noise Density i n f = 10 Hz 2 fA/√Hz1Gain testing is dependent upon test bandwidth.AD8571/AD8572/AD8574Rev. B | Page 5 of 24ABSOLUTE MAXIMUM RATINGSTable 3.Parameter RatingSupply Voltage 6 VInput Voltage GND to V S + 0.3 VDifferential Input Voltage 1 ±5.0 VESD (Human Body Model) 2000 VOutput Short-Circuit Duration to GND IndefiniteStorage Temperature RangeRM, RU, and R Packages −65°C to +150°COperating Temperature RangeAD8571A/AD8572A/AD8574A −40°C to +125°CJunction Temperature RangeRM, RU, and R Packages −65°C to +150°C Lead Temperature Range (Soldering, 60 sec) 300°C1Differential input voltage is limited to ±5.0 V or the supply voltage, whichever is less.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operationalsection of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.THERMAL CHARACTERISTICSθJA is specified for the worst-case conditions, that is, θJA is specified for a device soldered in a circuit board for SOIC and TSSOP packages. Table 4. Thermal Resistance Package Type θJA θJC Unit 8-Lead MSOP (RM) 190 44 °C/W 8-Lead TSSOP (RU) 240 43 °C/W 8-Lead SOIC (R) 158 43 °C/W 14-Lead TSSOP (RU) 180 36 °C/W 14-Lead SOIC (R) 120 36 °C/W ESD CAUTIONAD8571/AD8572/AD8574Rev. B | Page 6 of 24TYPICAL PERFORMANCE CHARACTERISTICS180012010060204080140160–1.5–2.5–0.50.5 1.5 2.5N U M B E R O F A M P L I F I E R SOFFSET VOLTAGE (µV)01104-007Figure 7. Input Offset Voltage Distribution at 2.7 V50403020100–20–10–30I N P U T B I A S C U R R E N T (p A )INPUT COMMON-MODE VOLTAGE (V)01104-008Figure 8. Input Bias Current vs. Common-Mode Voltage1500–200010005000–1000–1500–500012345I N P U T B I A S C U R R E N T (p A )COMMON-MODE VOLTAGE (V)V S = 5V T A = 125°C01104-009Figure 9. Input Bias Current vs. Common-Mode Voltage 180012010060204080140160N U M B E R O F A M P L I F I E R SOFFSET VOLTAGE (µV)01104-010Figure 10. Input Offset Voltage Distribution at 5 V121086420123465N U M B E R O F A M P L I F I E R SINPUT OFFSET DRIFT (nV/°C)01104-011Figure 11. Input Offset Voltage Drift Distribution at 5 V10k1k1001010.1O U T P U T V O L T A G E (m V )LOAD CURRENT (mA)01104-012Figure 12. Output Voltage to Supply Rail vs. Output Current at 5 VAD8571/AD8572/AD8574Rev. B | Page 7 of 2410k1k 1001010.1O U T P U T V O L T A G E (m V )LOAD CURRENT (mA)01104-013Figure 13. Output Voltage to Supply Rail vs. Output Current at 2.7 V 1000750500250I N P U T B I A S C UR R E N T (p A )TEMPERATURE (°C)01104-014Figure 14. Bias Current vs. Temperature1.00.80.60.40.2S U P P L Y C U R R E N T (m A )TEMPERATURE (°C)01104-015Figure 15. Supply Current vs. Temperature 8002001003004005006007000S U P P L Y C U R R E N T P E R A M P L I F I E R (µA )SUPPLY VOLTAGE (V)01104-016Figure 16. Supply Current vs. Supply Voltage45901351802252700604050102030–100–40–30–20O P E N -L O O P G A I N (d B )P H A S E S H I F T (D e g r e e s )FREQUENCY (Hz)01104-017Figure 17. Open-Loop Gain and Phase Shift vs. Frequency at 2.7 V45901351802252700604050102030–100–40–30–2010k100k 1M10M 100MO P E N -LO O P G A I N (d B )P H A S E S H I F T (D e g r e e s )FREQUENCY (Hz)01104-018Figure 18. Open-Loop Gain and Phase Shift vs. Frequency at 5 VAD8571/AD8572/AD8574Rev. B | Page 8 of 24604050102030–100–40–30–2010010k1k1M100k10MC L O S ED -L O O P G A I N (d B )FREQUENCY (Hz)01104-019Figure 19. Closed-Loop Gain vs. Frequency at 2.7 V 604050102030–100–40–30–20C L O S ED -L O O P G A I N (d B )FREQUENCY (Hz)01104-020Figure 20. Closed-Loop Gain vs. Frequency at 5 V3002402701501802109012003060O U T P U T I M P E D A N C E (Ω)FREQUENCY (Hz)01104-021Figure 21. Output Impedance vs. Frequency at 2.7 V3002402701501802109012003060O U T P U T I M P E D A N C E (Ω)FREQUENCY (Hz)01104-022Figure 22. Output Impedance vs. Frequency at 5 V01104-023Figure 23. Large Signal Transient Response at 2.7 V01104-024Figure 24. Large Signal Transient Response at 5 VAD8571/AD8572/AD8574Rev. B | Page 9 of 2401104-025Figure 25. Small Signal Transient Response at 2.7 V 01104-026Figure 26. Small Signal Transient Response at 5 V101001k10kCAPACITANCE (pF)01104-027S M A L L S I G N A L O V E R S H O O T(%)50450403530252015105Figure 27. Small Signal Overshoot vs. Load Capacitance at 2.7 V450510152025303540S M A L L S I G N A L O V E R S H O O T (%)CAPACITANCE (pF)01104-028Figure 28. Small Signal Overshoot vs. Load Capacitance at 5 V0V V INV OUT0VBOTTOM SCALE: 1V/DIV TOP SCALE: 200mV/DIV01104-029Figure 29. Positive Overvoltage Recovery0VV IN V OUT0VBOTTOM SCALE: 1V/DIV TOP SCALE: 200mV/DIV01104-030Figure 30. Negative Overvoltage RecoveryAD8571/AD8572/AD8574Rev. B | Page 10 of 2401104-031Figure 31. No Phase ReversalC M R R (d B )FREQUENCY (Hz)14080100120600204001104-032Figure 32. CMRR vs. Frequency at 2.7 VC M R R (d B )FREQUENCY (Hz)1408010012060204001104-033Figure 33. CMRR vs. Frequency at 5 VP S R R (d B )FREQUENCY (Hz)14010012001104-034Figure 34. PSRR vs. Frequency at ±1.35 V10010k 1k 10MP S R R (d B )FREQUENCY (Hz)1408010012060204001104-0351M 100kFigure 35. PSRR vs. Frequency at ±2.5 VO U T P U T S W I N G (V p -p )FREQUENCY (Hz)3.01.52.02.51.000.501104-036Figure 36. Maximum Output Swing vs. Frequency at 2.7 VAD8571/AD8572/AD8574Rev. B | Page 11 of 24O U T P U T S W I N G (V p -p )FREQUENCY (Hz)01104-037Figure 37. Maximum Output Swing vs. Frequency at 5 V 0V01104-038Figure 38. 0.1 Hz to 10 Hz Noise at 2.7 V01104-039Figure 39. 0.1 Hz to 10 Hz Noise at 5 V31236420826010415652e n (n V H z )FREQUENCY (kHz)01104-040Figure 40. Voltage Noise Density at 2.7 V from 0 Hz to 2.5 kHz961126480324816e n (n V H z )FREQUENCY (kHz)1104-041Figure 41. Voltage Noise Density at 2.7 V from 0 Hz to 25 kHz156182104130527826e n (n V H z )FREQUENCY (kHz)01104-042Figure 42. Voltage Noise Density at 5 V from 0 Hz to 2.5 kHzAD8571/AD8572/AD8574Rev. B | Page 12 of 24961126480324816e n (n V H z )FREQUENCY (kHz)01104-043Figure 43. Voltage Noise Density at 5 V from 0 Hz to 25 kHz 180210120150609030e n (n V H z )FREQUENCY (kHz)01104-044Figure 44. Voltage Noise Density at 5 V from 0 Hz to 10 Hz150145140130135125P O W E R S U P P L Y R E J E C T I O N (d B )TEMPERATURE (°C)01104-045Figure 45. Power Supply Rejection vs. Temperature50304010–30–10200–40–20–50–75–50–250255075100125150S H OR T -C I R C U I T C U R R E N T (m A )TEMPERATURE (°C)01104-046Figure 46. Output Short-Circuit Current vs. TemperatureAD8571/AD8572/AD8574Rev. B | Page 13 of 24100608020–60–20400–80–40–100–75–50–25255075100125150S H O R T -C I R C U I T C U R R E N T (m A )TEMPERATURE (°C)01104-047Figure 47. Output Short-Circuit Current vs. TemperatureO U T P U T V O L T A G E S W I N G (m V )TEMPERATURE (°C)100250200015025507512517522501104-048Figure 48. Output Voltage to Supply Rail vs. TemperatureO U T P U T V O L T A G E S W I N G (m V )TEMPERATURE (°C)100250200015025507512517522501104-049Figure 49. Output Voltage to Supply Rail vs. TemperatureAD8571/AD8572/AD8574Rev. B | Page 14 of 24FUNCTIONAL DESCRIPTIONThe AD8571/AD8572/AD8574 are CMOS amplifiers that achieve their high degree of precision through randomfrequency auto-zero stabilization. The autocorrection topology allows the AD857x to maintain its low offset voltage over a wide temperature range, and the randomized auto-zero clockeliminates any intermodulation distortion (IMD) errors at the amplifier output.The AD857x can be run from a single-supply voltage as low as 2.7 V . The extremely low offset voltage of 1 μV and no IMD products allows the amplifier to be easily configured for high gains without risk of excessive output voltage errors. This makes the AD857x an ideal amplifier for applications requiring both dc precision and low distortion for ac signals. The extremely small temperature drift of 5 nV/°C ensures a minimum of offset voltage error over its entire temperature range of −40°C to +125°C. These combined features make the AD857x an excellent choice for a variety of sensitive measurement and automotive applications.AMPLIFIER ARCHITECTUREEach AD857x op amp consists of two amplifiers: a main amplifier and a secondary amplifier that is used to correct the offset voltage of the main amplifier. Both consist of a rail-to-rail input stage, allowing the input common-mode voltage range to reach both supply rails. The input stage consists of an NMOS differential pair operating concurrently with a parallel PMOS differential pair. The outputs from the differential input stages are combined in another gain stage whose output is used to drive a rail-to-rail output stage.The wide voltage swing of the amplifier is achieved by using two output transistors in a common-source configuration. The output voltage range is limited by the drain-to-source resistance of these transistors. As the amplifier is required to source or sink more output current, the voltage drop across these transistors increases due to their on resistance (rds). Simply put, the output voltage does not swing as close to the rail under heavy output current conditions as it does with light output current. This is a characteristic of all rail-to-rail output amplifiers. Figure 12 and Figure 13 show how close the output voltage can get to the rails with a given output current. The output of the AD857x is short-circuit protected to approximately 50 mA of current.The AD857x amplifiers have exceptional gain, yielding greater than 120 dB of open-loop gain with a load of 2 kΩ. Because the output transistors are configured in a common-source configura-tion, the gain of the output stage, and thus the open-loop gain of the amplifier, is dependent on the load resistance. Open-loop gain decreases with smaller load resistances. This is another characteristic of rail-to-rail output amplifiers.BASIC AUTO-ZERO AMPLIFIER THEORYAutocorrection amplifiers are not a new technology. Various IC implementations have been available for more than 15 years and some improvements have been made over time. The AD857x design offers a number of significant performance improve-ments over older versions while attaining a very substantial reduction in device cost. This section offers a simplified explanation of how the AD857x is able to offer extremely low offset voltages and high open-loop gains.As noted in the Amplifier Architecture section, each AD857x op amp contains two internal amplifiers. One is used as the primary amplifier, the other as an autocorrection, or nulling, amplifier. Each amplifier has an associated input offset voltage that can be modeled as a dc voltage source in series with the noninverting input. In Figure 50 and Figure 51, these are labeled as V OSX , where X denotes the amplifier associated with the offset: A for the nulling amplifier, B for the primary amplifier. The open-loop gain for the +IN and −IN inputs of each amplifier is given as A X . Both amplifiers also have a third voltage input with an associated open-loop gain of B X . There are two modes of operation determined by the action of two sets of switches in the amplifier: an auto-zero phase and an amplification phase.AUTO-ZERO PHASEIn this phase, all φA switches are closed and all φB switches are opened. Here, the nulling amplifier is taken out of the gain loop by shorting its two inputs together. Of course, there is a degree of offset voltage, shown as V OSA , inherent in the nulling amplifier that maintains a potential difference between the +IN and −IN inputs. The nulling amplifier feedback loop is closed through φA 2 and V OSA appears at the output of the nulling amp and on C M1, an internal capacitor in the AD857x. Mathematically, we can express this in the time domain as][][][t V B t V A t V OA A OSA A OA −= (1)this also can be expressed as[][]AOSA A OA B t V A t V +=1 (2)This shows that the offset voltage of the nulling amplifier times a gain factor appears at the output of the nulling amplifier and thus on the C M1 capacitor.AD8571/AD8572/AD8574Rev. B | Page 15 of 24V IN+V IN–V 01104-050Figure 50. Auto-Zero Phase of the AmplifierAMPLIFICATION PHASEWhen the φB switches close and the φA switches open for the amplification phase, this offset voltage remains on C M1 and essentially corrects any error from the nulling amplifier. The voltage across C M1 is designated as V NA . The potential difference between the two inputs to the primary amplifier is designated as V IN , or V IN = (V IN+ − V IN–). The output of the nulling amplifier can then be expressed as[][][][]t V B t V t V A t V NA A OSA IN A OA −−=( (3)V IN+VIN–V 01104-051Figure 51. Output Phase of the AmplifierBecause φA is now open and there is no place for C M1 to discharge, the voltage (V NA ) at the present time (t) is equal to the voltage at the output of the nulling amp (V OA ) at the time when φA was closed. If the period of the autocorrection switching frequency is designated as T S , then the amplifier switches between phases every 0.5 × T S . Therefore, in the amplification phase[]⎥⎦⎤⎢⎣⎡−=S NA NA T t V t V 21 (4) and substituting Equation 4 and Equation 2 into Equation 3yields[][][]AS OSA A A OSA A IN A OA B T t V B A t V A t V A t V +⎥⎦⎤⎢⎣⎡−−+=121(5) For the sake of simplification, it can be assumed that the autocorrection frequency is much faster than any potential change in V OSA or V OSB . This is a good assumption since changes in offset voltage are a function of temperature variation orlong-term wear time, both of which are much slower than the auto-zero clock frequency of the AD857x. This effectively makes the V OS time invariant, and Equation 5 can be rewritten as[][]()AOSAA A OSA A A IN A OAB V B A V B A t V A t V +−++=11 (6)or[][]⎟⎟⎠⎞⎜⎜⎝⎛++=A OSA IN A OA B V t V A t V 1 (7) Here, the auto-zeroing becomes apparent. Note that the V OSterm is reduced by a 1 + B A factor. This shows how the nulling amplifier has greatly reduced its own offset voltage error even before correcting the primary amplifier. Thus, the primary amplifier output voltage is the voltage at the output of the AD857x amplifier. It is equal to[][]()NB B OSB IN B OUT V B V t V A t V ++= (8)In the amplification phase, V OA = V NB , so this can be rewritten as[][][]⎥⎥⎦⎤⎢⎢⎣⎡⎟⎟⎠⎞⎜⎜⎝⎛++++=A OSA IN A B OSB B IN B OUT B V t V A B V A t V A t V 1 (9) combining terms yields[][]()OSBB AOSAB A B A B IN OUT V A B V B A B A A t V t V ++++=1 (10)The AD857x architecture is optimized in such a way thatA A = AB and B A = B B and B A >> 1. In addition, the gain product to A A B B is much greater than A B . Thus, Equation 10 can be simplified to[][])(OSB OSA A A A IN OUT V V A B A t V t V ++= (11)Most obvious is the gain product of both the primary and nulling amplifiers. This A A B A term is what gives the AD857x its extremely high open-loop gain. To understand how V OSA and V OSB relate to the overall effective input offset voltage of thecomplete amplifier, set up the generic amplifier equation of )(,EFFOS INOUTV V k V +×= (12)where k is the open-loop gain of an amplifier and V OS , EFF is its effective offset voltage. Putting Equation 12 into the form of Equation 11 gives[][]A A EFF OS A A IN OUT B A V B A t V t V ,+= (13) ThereforeAOSBOSA EFF OS B V V V +≈, (14)。
MAX5937LBESA+中文资料
MAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE________________________________________________________________Maxim Integrated Products 119-3281; Rev 1; 1/05For pricing, delivery, and ordering information,please contact Maxim/Dallas Direct!at 1-888-629-4642, or visit Maxim’s website at .General DescriptionThe MAX5936/MAX5937 are hot-swap controllers for -10V to -80V rails. The MAX5936/MAX5937 allow circuit line cards to be safely hot-plugged into a live back-plane without causing a glitch on the power supply.These devices integrate a circuit-breaker function requiring no R SENSE .The MAX5936/MAX5937 provide a controlled turn-on for circuit cards, limiting inrush, preventing glitches on the power-supply rail, and preventing damage to board connectors and components. Before startup, the devices perform a Load Probe™ test to detect the presence of a short-circuit condition. If a short-circuit condition does not exist, the device limits the inrush current drawn by the load by gradually turning on the external MOSFET. Once the external MOSFET is fully enhanced, the MAX5936/MAX5937 provides overcur-rent and short-circuit protection by monitoring the volt-age drop across the R DS(ON)of the external power MOSFET. The MAX5936/MAX5937 integrate a 400mA fast G ATE pulldown to guarantee that the power MOSFET is rapidly turned off in the event of an overcur-rent or short-circuit condition.The MAX5936/MAX5937 protect the system against input voltage (V IN ) steps by providing V IN step immuni-ty. The MAX5936/MAX5937 provide an accurate UVLO voltage. The MAX5936 has an open-drain, active-low PGOOD output and the MAX5937 has an open-drain,active-high PGOOD output.The MAX5936/MAX5937 are offered with 100mV,200mV, and 400mV circuit-breaker thresholds, in addi-tion to a non-circuit-breaker option. These devices are offered in latched and autoretry fault management, are available in 8-pin SO packages, and specified for the extended (-40°C to +85°C) temperature range (see the Selector Guide ).ApplicationsServersTelecom Line Cards Network Switches Solid-State Circuit Breaker Network RoutersFeatures♦-10V to -80V Operation ♦No R SENSE Required♦Drives Large Power MOSFETS♦Programmable Inrush Current Limit During Hot Plug ♦100mV, 200mV, 400mV, and No-Circuit-Breaker Threshold Options ♦Circuit-Breaker Fault with Transient Rejection ♦Shorted Load Detection (Load Probe) Before Power MOSFET Turn-On ♦±2.4% Accurate Undervoltage Lockout (UVLO)♦Autoretry and Latched Fault Management Available ♦Low Quiescent CurrentPin ConfigurationLoad Probe is a trademark of Maxim Integrated Products, Inc.Ordering InformationNote:The first “_” represents A for the autoretry and L for the latched fault management option.The second “_” represents the circuit-breaker threshold. See the Selector Guide for additional information.Selector Guide and Typical Operating Circuit appear at end of data sheet.M A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE 2_______________________________________________________________________________________ABSOLUTE MAXIMUM RATINGSStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.V EE , V OUT , PGOOD (PGOOD ), LP,STEP_MON to GND............................................+0.3V to -85V PGOOD (PGOOD ) to V OUT ....................................-0.3V to +85V PGOOD (PGOOD ), LP, STEP_MON to V EE ............-0.3V to +85V GATE to V EE ...........................................................-0.3V to +20V UVLO to V EE .............................................................-0.3V to +6V Input CurrentLP (internally, duty-cycle limited).........................................1A PGOOD (PGOOD ) (continuous).....................................80mAGATE (during 15V clamp, continuous)...........................30mA GATE (during 2V clamp, continuous).............................50mA GATE (during gate pulldown, continuous)......................50mA Continuous Power Dissipation (T A = +70°C)8-Pin SO (derate 5.9mW/°C above +70°C)..................471mW Operating Temperature Range ...........................-40°C to +85°C Junction Temperature .....................................................+150°C Storage Temperature Range ............................-65°C to +150°C Lead Temperature (soldering, 10s) ................................+300°CELECTRICAL CHARACTERISTICS(V= -10V to -80V, V = GND - V , V =V , R = 200Ω, UVLO open, T = -40°C to +85°C, unless otherwise noted.MAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSEELECTRICAL CHARACTERISTICS (continued)M A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE 4_______________________________________________________________________________________Note 2:All limits are 100% tested at +25°C and +85°C. Limits at -40°C and -10°C are guaranteed by characterization.Note 3:Delay time from a valid on-condition until the load probe test begins.Note 4:V EE or UVLO voltages below V UVLO,F or V UVLO_REF,F , respectively, are ignored during this time.Note 5:The time (V OUT - V EE ) > V SC + overdrive until (V GATE - V EE ) drops to approximately 90% of its initial high value.Note 6:The time when the PGOOD (PGOOD ) condition is met until the PGOOD (PGOOD ) signal is asserted.ELECTRICAL CHARACTERISTICS (continued)MAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE_______________________________________________________________________________________5SUPPLY CURRENT vs. INPUT VOLTAGEM A Z 5936 t o c 01INPUT VOLTAGE (V)S U P P L Y C U R R E N T (m A )7060405030200.20.40.60.81.01.21.41.61.82.001080SUPPLY CURRENT vs. TEMPERATURETEMPERATURE (°C)S U P P L Y C U R R E N T (m A )603510-150.20.40.60.81.01.20-4085GATE-DRIVE VOLTAGE vs. INPUT VOLTAGEM A X 536 t o c 03INPUT VOLTAGE (V)G A T E -D R I V E V O L T A G E (V )7060405030206.57.07.58.08.59.09.510.010.56.01080GATE PULLDOWN CURRENTvs. GATE VOLTAGEM A X 5936 t o c 04V GATE (V)G A T E P U L L D O W N C U R R E N T (m A )986723451501001502002503003504004505000010RETRY TIME vs. TEMPERATURETEMPERATURE (°C)R E T R Y T I M E (s )603510-153.13.23.33.43.53.63.73.83.94.03.0-4085STARTUP WAVEFORMMAX5936 toc0640ms/divV IN 50V/div V GATE 10V/div V OUT 50V/div I IN 2A/divV PGOOD 50V/div MAX5936_A CIRCUIT-BREAKER EVENTMAX5936 toc071ms/divV GATE 10V/divV OUT 50V/divI IN 2A/divV PGOOD 50V/div Typical Operating Characteristics(V EE = -48V, GND = 0V, V IN = GND - V EE , all voltages are referenced to V EE , T A = +25°C, unless otherwise noted.)M A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE 6_______________________________________________________________________________________MAX5936_A SHORT-CIRCUIT EVENTMAX5936 toc08400ns/divV GATE 10V/divV OUT 50V/div I IN10A/divV PGOOD 50V/divNORMALIZED CIRCUIT-BREAKER THRESHOLD vs. TEMPERATUREM A X 5936 t o c 09TEMPERATURE (°C)N O R M A L I Z E D C I R C U I T -B R E A K E R T H R E S H O L D (%)603510-150.60.81.01.21.41.60.4-4085V OUT SLEW RATE vs. TEMPERATURETEMPERATURE (°C)S L E W R A T E (V /m s )603510-155.56.0 6.57.07.58.08.59.09.510.05.0-4085MAX5936_A INPUT VOLTAGE STEP EVENT (NO FAULT)4ms/divGATE OUT IN V PGOOD IN R LOAD = 75ΩMAX5936_A INPUT VOLTAGESTEP EVENT (FAULT)4ms/divGATE OUT IN V PGOODIN R LOAD = 75ΩGATE TO V EE CLAMP VOLTAGEAT POWER OFFI SINK (mA)G A T E C L A M P I N G V O L T A G E (V )181614121086420.51.01.52.02.53.00020GATE TO V EE CLAMP VOLTAGE MOSFET FULLY ENHANCEDI SINK (mA)G A T E C L A M P I N G V O L T A G E (V )1816121446810291011121314151617188020Typical Operating Characteristics (continued)(V EE = -48V, GND = 0V, V IN = GND - V EE , all voltages are referenced to V EE , T A = +25°C, unless otherwise noted.)MAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE_______________________________________________________________________________________7Detailed DescriptionThe MAX5936/MAX5937 hot-swap controllers incorpo-rate overcurrent fault management and are intended for negative-supply-rail applications. The MAX5936/MAX5937 eliminate the need for an external R SENSE and include V IN input-step protection and load probe,which prevents powering up into a shorted load. They are intended for negative 48V telecom power systems where low cost, flexibility, multifault management, and compact size are required. The MAX5936/MAX5937 are ideal for the widest range of systems from those requiring low current with small MOSFETs to high-current systems requiring large power MOSFETs and low on-resistance.The MAX5936/MAX5937 control an external n-channel power MOSFET placed in the negative supply path of an external load. When no power is applied, the GATE output of the MAX5936/MAX5937 clamps the V GS of the MOSFET to 2V, keeping the MOSFET turned off. When power is applied to the MAX5936/MAX5937, the 2Vdown device pulling G ATE to V EE and the V GS of the MOSFET to 0V. As shown in Figure 2, this transition enables the MAX5936/MAX5937 to keep the power MOSFET continually off during the board insertion phase when the circuit board first makes contact with the backplane. Without this clamp, the GATE output of a powered-down controller would be floating and the MOSFET reverse transfer capacitance (gate-to-drain)would pull up and turn on the MOSFET gate when the MOSFET drain is rapidly pulled up by the V IN step dur-ing backplane contact. The MAX5936/MAX5937 G ATE clamp can overcome the gate-to-drain capacitance of large power MOSFETs with added slew-rate control (C SLEW ) capacitors while eliminating the need for addi-tional gate-to-source capacitance. The MAX5936/MAX5937 will keep the MOSFET off indefinitely if the supply voltage is below the user-set UVLO threshold or if a short circuit is detected in the load connected to the drain of the power MOSFET.M A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE 8_______________________________________________________________________________________The MAX5936/MAX5937 conduct a load-probe test after contact transients from the hot plug-in have settled. This follows the MAX5936/MAX5937 power-up (when the UVLO condition has been met for 220ms (t LP )) and prior to the turn-on of the power MOSFET. This test pulls a user-programmable current through the load (1A, max)for up to 220ms and tests for a voltage of 200mV across the load at V OUT . This current is set by an external resis-tor, R LP , between V OUT and LP (Figure 14). When the voltage across the load exceeds 200mV, the test is trun-cated and the GATE turn-on sequence is started. If at the end of the 220ms test period the voltage across the load has not reached 200mV, the load is assumed to be short-ed and the current to the load from the LP pin is shut off.The MAX5936A_/MAX5937A_ will timeout for 16 x t LP then retry the load-probe test. The MAX5936L_/MAX5937L_ will latch the fault condition indefinitely untilthe UVLO is brought below 1.125V for 1.5ms or the power is recycled. See the Applications Information section for recommendations on selecting R LP to set the current level.Upon successful completion of the load-probe test, the MAX5936/MAX5937 enter the power-up GATE cycle and begin ramping the G ATE voltage with a 52µA current source. This current source is restricted if V OUT begins to ramp down faster than the default 9V/ms slew rate.Charging up G ATE enhances the power MOSFET in a controlled manner and ramping V OUT at a user-settable rate controls the inrush current from the backplane. The MAX5936/MAX5937 continue to charge up the G ATE until one of two events occurs: a normal power-up GATE cycle is completed or a power-up to fault management is detected (see the GATE Cycles section in Appendix A ).Figure 1. Functional Block DiagramMAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE_______________________________________________________________________________________9In a normal power-up GATE cycle, the voltage at V OUT (referenced to V EE ) ramps to below 72% of the circuit-breaker threshold voltage, V CB . At this time, the remaining GATE voltage is rapidly pulled up to full enhancement.PGOOD is asserted 1.26ms after GATE is fully enhanced (see Figure 4). If the voltage at V OUT remains above 72%of the V CB (when GATE reaches 90% of full enhance-ment), then a power-up to fault management fault has occurred (see Figure 5). GATE is rapidly pulled to V EE ,turning off the power MOSFET and disconnecting the load. PGOOD remains deasserted and the MAX5936/MAX5937 enter the fault management mode.When the power MOSFET is fully enhanced, the MAX5936/MAX5937 monitor the drain voltage (V OUT ) for circuit-breaker and short-circuit faults. The MAX5936/MAX5937 make use of the power MOSFET’s R DS(ON) as the current-sense resistance to detect excessive current through the load. The short-circuit threshold voltage,V SC , is twice V CB (V SC = 2 x V CB ) and is available in 100mV, 200mV, and 400mV thresholds. V CB and V SC are temperature-compensated (increasing with tempera-ture) to track the normalized temperature coefficient of R DS(ON) for typical power MOSFETs.When the load current is increased during full enhance-ment, this causes V OUT to exceed V CB but remains less than V SC , and starts the 1.2ms circuit-breaker glitch rejection timer. At the end of the glitch rejection period,if V OUT still exceeds V CB , the G ATE is immediately pulled to V EE (330ns), PGOOD (PGOOD ) is deasserted,and the part enters fault management. Alternatively,during full enhancement when V OUT exceeds V SC ,there is no glitch rejection timer. G ATE is immediately pulled to V EE , PG OOD is deasserted, and the part enters fault management.Figure 3. Load Probe Test During Initial Power-Up40ms/divV 20V/divV 20V/divV 20V/divALL VOLTAGESREFERENCED TO GND Figure 2. GATE Voltage Clamp During Power-Up 4ms/divC IN = 100µFFigure 4. MAX5936 Normal Condition 40ms/divFigure 5. MAX5936 Startup in Fault Condition40ms/divM A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE10______________________________________________________________________________________The V IN step immunity provides a means for transition-ing through a large step increase in V IN with minimal backplane inrush current and without shutting down the load. Without V IN step immunity (when the power MOSFET is fully enhanced), a step increase in V IN will result in a high inrush current and a large step in V OUT ,which can trip the circuit breaker. With V IN step immu-nity, the STEP_MON input detects the step before a short circuit is detected at V OUT and alters the MAX5936/MAX5937 response to V OUT exceeding V SC due to the step. The 1.25V voltage threshold at STEP_MON and a 10µA current source at STEP_MON allow the user to set the sensitivity of the step detection with an external resistor to V EE . A capacitor is placed between GND and the STEP_MON input, which, in con-junction with the resistor, sets the STEP_MON time con-stant. When a step is detected by the STEP_MON input to rise above its threshold (STEP TH ), the overcurrent fault management is blocked and remains blocked as long as STEP TH is exceeded. When STEP TH is exceed-ed, the MAX5936/MAX5937 take no action until V OUT rises above V SC or above V CB for the 1.2ms circuit-breaker glitch rejection period. When either of these conditions occurs, a step G ATE cycle begins and the GATE is immediately brought to V EE , which turns off the power MOSFET to minimize the resulting inrush current surge from the backplane and PGOOD remains assert-ed. GATE is held at V EE for 350µs, and after about 1ms,begins to ramp up thereby enhancing the power MOSFET in a controlled manner as in the power-up G ATE cycle. This provides a controlled inrush current to charge the load capacitance to the new supply volt-age (see the GATE Cycles section in Appendix A ).As in the case of the power-up G ATE cycle, if V OUT drops to less than 72% of the programmed V CB , inde-pendent of the state of STEP_MON, the G ATE voltageis rapidly pulled to full enhancement. PGOOD remains asserted throughout the step. Otherwise, if the STEP_MON input has decayed below its threshold but V OUT remains above 72% of the programmed V CB (when G ATE reaches 90% of full enhancement), (a step-to-fault management fault has occurred). GATE is rapidly pulled to V EE , turning off the power MOSFET and disconnecting the load, PG OOD (PGOOD ) is deasserted, and the MAX5936/MAX5937 enter the fault management mode.Fault ManagementFault management can be triggered by the following conditions:•V OUT exceeds 72% of V CB during G ATE ramp at 90% of full enhancement,•V OUT exceeds the V CB for longer than 1.2ms during full enhancement,•V OUT exceeds the V SC during full enhancement, and •Load-probe test fails.Once in the fault management mode, GATE will always be pulled to V EE to turn off the external MOSFET and PG OOD (PGOOD ) will always be deasserted. The MAX5936A_/MAX5937A_ have automatic retry following a fault while the MAX5936L_/MAX5937L remain latched in the fault condition.Autoretry Fault Management(MAX5936A_/MAX5937A_)If the MAX5936A_/MAX5937A_entered fault management due to circuit-breaker and short-circuit faults, the autoretry timer starts immediately. The timer times out in 3.5s (typ) and at the end of the timeout, the sequencer initiates a load-probe test. If this is successful, it starts a normal power-up GATE cycle.Figure 6. MAX5936 Response to a Step Input (V OUT < 0.74V CB )2ms/divC LOAD = 100µF R LOAD = 100ΩFigure 7. MAX5936 Response to a Step Input (V OUT > 0.74V CB )4ms/div40V 20VC LOAD = 100µF R LOAD = 20ΩMAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE______________________________________________________________________________________11Latched Fault Management (MAX5936L_/MAX5937L_)When the MAX5936L_/MAX5937L_ enter fault manage-ment, they remain in this condition indefinitely until the power is recycled or until UVLO is brought below 1.125V for 1.5ms (typ) (when the short-circuit or circuit-breaker fault has cleared, the sequencer initiates a load-probe test). If this is successful, it starts a normal power-up GATE cycle. A manual reset circuit (Figure 8)can be used to clear the latch.Circuit-Breaker ThresholdsThe MAX5936/MAX5937 are available with 100mV,200mV, and 400mV circuit-breaker thresholds. The short-circuit voltage threshold (V SC ) is twice the circuit-breaker threshold voltage (V CB ). In the MAX5936/MAX5937, V CB and V SC are temperature-compensated (increasing with temperature) to track the normalized temperature gradient of typical power MOSFETs.The proper circuit-breaker threshold for an application depends on the R DS(ON) of the external power MOSFET and the maximum current the load is expected to draw.To avoid false fault indication and dropping of the load,the designer must take into account the load response to voltage ripples and noise from the backplane power supply, as well as switching currents in the downstream DC-DC converter that is loading the circuit. While the circuit-breaker threshold has glitch rejection that ignores ripples and noise lasting less than 1.2ms, the short-circuit detection is designed to respond very quickly (less than 330ns) to a short circuit. V SC and V CB must be selected from the three available rangeswith an adequate margin to cover all possible ripples,noise, and system current transients.The short-circuit and circuit-breaker voltages are sensed at V OUT , which is the drain of the power MOSFET. The R DS(ON)of the MOSFET is the current-sense resis-tance, so the total current through the load and load capacitance is the drain current of the power MOSFET.Accordingly, the voltage at V OUT as a function of MOSFET drain current is:V OUT = I D,MOSFET x R DS(ON)The temperature compensation of the MAX5936/MAX5937 is designed to track the R DS(ON) of the typi-cal power MOSFET. Figure 9 shows the typical normal-ized tempco of the circuit-breaker threshold along with the normalized tempco of R DS(ON) for two typical power MOSFETS. When determining the circuit-breaker threshold in an application, go to the data sheet of the power MOSFET and locate the manufacturer’s maxi-mum R DS(ON)at +25°C with a V GS of 10V. Next, find the figure presenting the tempco of normalized R DS(ON)or on-resistance vs. temperature. Because this curve is in normalized units typically with a value of 1 at +25°C,it is possible to multiply the curve by the drain voltage at +25°C and convert the curve to drain voltage. Now compare this curve to that of the MAX5936/MAX5937 normalized tempco of the circuit-breaker threshold to make a determination of the tracking error in mV between the power MOSFET [I D,MOSFET x R DS(ON)]and the MAX5936/MAX5937 over the application’s operating temperature range. If the tempco of the power MOSFET is greater than that of the MAX5936/MAX5937, then additional margin will be required in selecting the circuit-breaker and short-circuit voltages at higher temperatures as compared to +25°C. When dissipation in the power MOSFET is expected to lead to local temperature elevation relative to ambient condi-tions, then it becomes imperative that the MAX5936/MAX5937 be located as close as possible to the power MOSFET. The marginal effect of temperature differ-ences on circuit-breaker and short-circuit voltages can be estimated from a comparative plot such as Figure 9.MAX5936LN and MAX5937LNThe MAX5936LN and MAX5937LN do not have circuit-breaker and short-circuit thresholds and these faults are ignored. For these devices PG OOD (PGOOD )asserts 1.26ms after G ATE has ramped to 90% of full enhancement. The step detection function of the MAX5936LN and MAX5937LN responds to V IN and V OUT steps with the same voltage thresholds as the MAX5936_C and MAX5937_C.Figure 8. Resetting MAX5936L/MAX5937L after a Fault Condition Using a Push-Button SwitchM A X 5936/M A X 5937-48V Hot-Swap Controllers with V IN Step Immunity and No R SENSE12______________________________________________________________________________________PGOOD (PGOOD ) Open-Drain OutputThe power-good outputs, PG OOD (PGOOD ), are open drain and are referenced to V OUT . They assert and latch if V OUT ramps below 72% of V CB , and with the built-in delay this occurs 1.26ms after the external MOSFET becomes fully enhanced. PG OOD (PGOOD ) deasserts any time the part enters fault management. PG OOD (PGOOD ) has a delayed response to UVLO. The GATE goes to V EE when UVLO is brought below 1.125V for 1.5ms. This turns off the power MOSFET and allows V OUT to rise depending on the RC time constant of the load. PG OOD (PGOOD ), in this situation, deasserts when V OUT rises above V CB for more than 1.4ms or above V SC , whichever occurs first (see Figure 12b).Due to the open-drain driver, PG OOD (PGOOD )requires an external pullup resistor to GND. Due to this external pullup, PG OOD will not follow positive V IN steps as well as if it were driven by an active pullup. As a result, when PG OOD (PGOOD) is asserted high, an apparent negative glitch appears at PGOOD (PGOOD )during a positive V IN step. This negative glitch is a result of the RC time constant of the external resistor and the PGOOD pin capacitance lagging the V IN step.It is not due to switching of the internal logic. To mini-mize this negative transient, it may be necessary to increase the pullup current and/or to add a small amount of capacitance from PGOOD (PGOOD ) to GND to compensate for the pin capacitance.WARNING:For the MAX5936_N/MAX5937_N, PGOOD (PGOOD ) asserts 1.26ms after the power MOSFET is fully enhanced, independent of V OUT . Once the MOSFET is fully enhanced and UVLO is pulled below its respective threshold, G ATE pulls to V EE to turn off the power MOSFET and disconnect the load. When UVLO is cycled low, PG OOD (PGOOD ) is deasserted. In sum-mary, once the MOSFET is fully enhanced, the MAX5936_N/ MAX5937_N ignore V OUT and deassert PG OOD (PGOOD ) when UVLO goes low or when the power to the MAX5936_N/ MAX5937_N is fully recy-cled.Undervoltage Lockout (UVLO)UVLO provides an accurate means to set the turn-on volt-age level for the MAX5936/MAX5937. Use a resistor-divider network from G ND to V EE to set the desired turn-on voltage (Figure 11). UVLO has hysteresis with a rising threshold of 1.25V and a falling threshold of 1.125V.A startup delay of 220ms allows contacts and voltages to settle prior to initiating the startup sequence (Figure 12a).Figure 9. MAX5936/MAX5937 Normalized Circuit-Breaker Threshold (V CB )Figure 10. Circuit-Breaker Voltage Margin for High and Low Tempco Power MOSFETSMAX5936/MAX5937-48V Hot-Swap Controllers with V INStep Immunity and No R SENSE______________________________________________________________________________________13This startup delay is from a valid UVLO condition until the start of the load-probe test. There is glitch rejection on UVLO going low, which requires that V UVLO remains below its falling threshold for 1.5ms to turn off the part (Figure 12b). Use the following formula to calculate the MAX5936/MAX59337 turn-on voltage:Where V ON is the desired turn-on voltage of theMAX5936/MAX5937 and V UVLO_REF,R is the 1.25V UVLO rising threshold.Output Voltage (V OUT )Slew-Rate ControlThe V OUT slew rate controls the inrush current required to charge the load capacitor. The MAX5936/MAX5937have a default internal slew rate set for 9V/ms. The inter-nal circuit establishing this slew rate accommodates up to about 1000pF of reverse transfer capacitance (miller capacitance) in the external power MOSFET without effecting the default slew rate. Using the default slew rate, the inrush current required to charge the load capacitance is given by:I INRUSH (mA) = C LOAD (µF) x SR (V/ms)where SR = 9V/ms (default, typ).Applications InformationSelecting Resistor and Capacitorfor Step MonitorWhen a positive V IN step or ramp occurs, the V IN increase results in a voltage rise at both STEP_MON and V OUT relative to V EE . When the voltage at STEP_MON is above STEP TH the MAX5936/MAX5937block short-circuit and circuit-breaker faults. During this STEP_MON high condition, if V OUT rises above V SC , the MAX5936/MAX5937 immediately and very rapidly pull GATE to V EE . This turns off the power MOSFET to avoid inrush current spiking. G ATE is held low for 350µs.About 1ms after the start of G ATE pulldown, the MAX5936/MAX5937 begin to ramp GATE up to turn on the MOSFET in a controlled manner, which results in ramping V OUT down to the new supply level (see the GATE Cycles section in Appendix A ).Figure 11. Setting the MAX5936/MAX5937 Turn-On VoltageFigure 12. UVLO Timing Diagram。
AD7457BRTZ-REEL7;中文规格书,Datasheet资料
Low Power, Pseudo Differential, 100 kSPS12-Bit ADC in an 8-Lead SOT-23AD7457 Rev.AInformation furnished by Analog Devices is believed to be accurate and reliable.However, no responsibility is assumed by Analog Devices for its use, nor for anyinfringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: Fax: 781.326.8703© 2005 Analog Devices, Inc. All rights reserved.FEATURESSpecified for V DD of 2.7 V to 5.25 VLow power:0.9 mW max at 100 kSPS with V DD = 3 V3 mW max at 100 kSPS with V DD = 5 V Pseudo differential analog inputWide input bandwidth:70 dB SINAD at 30 kHz input frequency Flexible power/serial clock speed management No pipeline delaysHigh speed serial interface—SPI®-/QSPI™-/ MICROWIRE™-/DSP-compatibleAutomatic power-down mode8-lead SOT-23 packageAPPLICATIONSTransducer interfaceBattery-powered systemsData acquisition systemsPortable instrumentationFUNCTIONAL BLOCK DIAGRAMV REFGNDSCLKSDA T ACSVV IN+V IN–3157--13Figure 1.GENERAL DESCRIPTIONThe AD7457 is a 12-bit, low power, successive approximation (SAR) analog-to-digital converter that features a pseudo differential analog input. This part operates from a single 2.7 V to 5.25 V power supply and features throughput rates of up to 100 kSPS.The part contains a low noise, wide bandwidth, differential track-and-hold (T/H) amplifier that can handle input frequen-cies in excess of 1 MHz. The reference voltage for the AD7457 is applied externally to the V REF pin and can range from 100 mV to V DD, depending on what suits the application.The conversion process and data acquisition are controlled using CS and the serial clock, allowing the device to interface with microprocessors or DSPs. The SAR architecture of this part ensures that there are no pipeline delays.The AD7457 uses advanced design techniques to achieve very low power dissipation. PRODUCT HIGHLIGHTS1.Operation with2.7 V to 5.25 V power supplies.2.Low power consumption. With a 3 V supply, the AD7457offers 0.9 mW maximum power consumption for a100 kSPS throughput rate.3.Pseudo differential analog input.4.Flexible power/serial clock speed management. Theconversion rate is determined by the serial clock, allowing the power to be reduced as the conversion time is reduced through the serial clock speed increase. Automatic power-down after conversion allows the average power consump-tion to be reduced.5.Variable voltage reference input.6.No pipeline delays.7.Accurate control of the sampling instant via the CS inputand once-off conversion control.8.ENOB > 10 bits typically with 500 mV reference.AD7457Rev. A | Page 2 of 20TABLE OF CONTENTSSpecifications.....................................................................................3 Timing Specifications.......................................................................5 Absolute Maximum Ratings............................................................6 ESD Caution..................................................................................6 Pin Configuration and Function Descriptions.............................7 Typical Performance Characteristics.............................................8 Terminology....................................................................................10 Theory of Operation......................................................................11 Circuit Information....................................................................11 Converter Operation..................................................................11 ADC Transfer Function.............................................................11 Typical Connection Diagram...................................................11 Analog Input...............................................................................12 Analog Input Structure..............................................................12 Digital Inputs..............................................................................13 Reference Section.......................................................................13 Serial Interface............................................................................13 Power Consumption..................................................................14 Microprocessor Interfacing.......................................................14 Application Hints...........................................................................16 Grounding and Layout..............................................................16 Outline Dimensions.......................................................................17 Ordering Guide.. (17)REVISION HISTORY2/05—Rev. 0 to Rev. AChanges to Table 3............................................................................6 Changes to Ordering Guide..........................................................17 10/03—Rev. 0: Initial VersionAD7457Rev. A | Page 3 of 20SPECIFICATIONSV DD = 2.7 V to 5.25 V , f SCLK = 10 MHz, f S = 100 kSPS, V REF = 2.5 V , T A = T MIN to T MAX , unless otherwise noted. Table 1.Parameter Test Conditions/Comments B Version 1Unit DYNAMIC PERFORMANCE f IN = 30 kHz Signal to Noise Ratio (SNR)2 71 dB minSignal to (Noise + Distortion) (SINAD)270 dB min Total Harmonic Distortion (THD)2 −84 dB typ −75 dB maxPeak Harmonic or Spurious Noise 2−86 dB typ −75 dB max Intermodulation Distortion (IMD)2 fa = 25 kHz; fb = 35 kHz Second-Order Terms −80 dB typ Third-Order Terms −80 dB typ Aperture Delay 2 5 ns typAperture Jitter 250 ps typ Full-Power Bandwidth 2, 3@ −3 dB 20 MHz typ @ −0.1 dB 2.5 MHz typ DC ACCURACY Resolution 12 BitsIntegral Nonlinearity (INL)2±1 LSB max Differential Nonlinearity (DNL)2 Guaranteed no missed codes to 12 bits ±0.95 LSB maxOffset Error 2±4.5 LSB max Gain Error 2 ±2 LSB max ANALOG INPUT Full-Scale Input Span V IN+ − V IN −V REF V Absolute Input Voltage V IN+ V REF VV IN −4V DD = 2.7 V to 3.6 V −0.1 to +0.4 V V DD = 4.75 V to 5.25 V −0.1 to +1.5 V DC Leakage Current ±1 µA max Input Capacitance When in track/hold 30/10 pF typ REFERENCE INPUT V REF Input Voltage 5±1% tolerance for specified performance 2.5 V DC Leakage Current ±1 µA max V REF Input Capacitance When in track/hold 10/30 pF typ LOGIC INPUTS Input High Voltage, V INH 2.4 V min Input Low Voltage, V INL 0.8 V max Input Current, I IN Typically 10 nA, V IN = 0 V or V DD ±1 µA maxInput Capacitance, C IN 610 pF max LOGIC OUTPUTS Output High Voltage, V OH V DD = 4.75 V to 5.25 V, I SOURCE = 200 µA 2.8 V min V DD = 2.7 V to 3.6 V, I SOURCE = 200 µA 2.4 V min Output Low Voltage, V OL I SINK = 200 µA 0.4 V max Floating-State Leakage Current ±1 µA max Floating-State Output Capacitance 6 10 pF max Output Coding Straight natural binary CONVERSION RATE Conversion Time 1.6 µs with a 10 MHz SCLK 16 SCLK cyclesTrack-and-Hold Acquisition Time 21 µs max Throughput Rate See the Serial Interface section 100 kSPS maxAD7457Rev. A | Page 4 of 20Parameter Test Conditions/Comments B Version 1Unit POWER REQUIREMENTS V DD 2.7/5.25 V min/max I DD 7, 8During Conversion 6V DD = 4.75 V to 5.25 V 1.5 mA max V DD = 2.7 V to 3.6 V 1.2 mA max Normal Mode (Static) SCLK on or off 0.5 mA typ Normal Mode (Operational) V DD = 4.75 V to 5.25 V 0.7 mA max V DD = 2.7 V to 3.6 V 0.33 mA max Power-Down SCLK on or off 1 µA max Power Dissipation Normal Mode (Operational) V DD = 5 V 3 mW max V DD = 3 V 0.9 mW max Power-Down V DD = 5 V; SCLK on or off 5 µW max V DD = 3 V; SCLK on or off 3 µW max1 Temperature range for B version: −40°C to +85°C. 2See the section. Terminology 3Analog inputs with slew rates exceeding 27 V/µs (full-scale input sine wave > 3.5 MHz) within the acquisition time may cause an incorrect result to be returned by the converter. 4A dc input is applied to V IN– to provide a pseudo ground for V IN+. 5The AD7457 is functional with a reference input range of 100 mV to V DD . 6Guaranteed by characterization. 7See the section. Power Consumption 8Measured with a full-scale dc input.AD7457Rev. A | Page 5 of 20TIMING SPECIFICATIONS 1V DD = 2.7 V to 5.25 V , f SCLK = 10 MHz, f S = 100 kSPS, V REF = 2.5 V , T A = T MIN to T MAX , unless otherwise noted.1The timing specifications are guaranteed by characterization. All input signals are specified with tr = tf = 5 ns (10% to 90% of V DD ) and timed from a voltage level of 1.6 V. See and the Serial section. Figure 2 Interface 2Mark/space ratio for the SCLK input is 40/60 to 60/40. 3Measured with the load circuit of and defined as the time required for the output to cross 0.8 V or 2.4 V with V Figure 3Figure 3.DD = 5 V, and the time required for the output to cross 0.4 V or 2.0 V for VDD = 3 V. 4t 8 is derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of The measured number is then extrapolated back to remove the effects of charging or discharging the 25 pF capacitor. This means that the time, t 8, quoted in the timing characteristics is the true bus relinquish time of the part and is independent of the bus loading. 5See the section. Power ConsumptionPOWER CONVERT SCLKCS 03157-0-001Figure 2. AD7457 Serial Interface Timing DiagramAD7457Rev. A | Page 6 of 20ABSOLUTE MAXIMUM RATINGST A = 25°C, unless otherwise noted. Table 3.Parameter Rating V DD to GND −0.3 V to +7 V V IN+ to GND −0.3 V to V DD + 0.3 V V IN– to GND −0.3 V to V DD + 0.3 V Digital Input Voltage to GND −0.3 V to +7 V Digital Output Voltage to GND −0.3 V to V DD + 0.3 V V REF to GND −0.3 V to V DD + 0.3 VInput Current to Any Pin Except Supplies 1±10 mAOperating Temperature Range Commercial (B Version) −40°C to +85°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°C θJA Thermal Impedance 211.5°C/W (SOT-23)θJC Thermal Impedance 91.99°C/W (SOT-23) Lead Temperature, SolderingVapor Phase (60 sec) 215°CInfrared (15 sec) 220°CPb-Free Temperature, Soldering Reflow 260(+0)°C1Transient currents of up to 100 mA do not cause SCR latch-up.Stresses above those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TOOUTPUTPIN03157-0-012Figure 3. Load Circuit for Digital Output Timing SpecificationsESD CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.AD7457Rev. A | Page 7 of 20PIN CONFIGURATION AND FUNCTION DESCRIPTIONSV DD SCLK SDATA CS REF IN+IN–03157-0-002Figure 4. 8-Lead SOT-23 Pin ConfigurationAD7457Rev. A | Page 8 of 20TYPICAL PERFORMANCE CHARACTERISTICST A = 25°C, f S = 100 kSPS, f SCLK = 10 MHz, V DD = 2.7 V to 5.25 V , V REF = 2.5 V , unless otherwise noted.FREQUENCY (kHz)10S I N A D (d B )2050304003157-0-014Figure 5. SINAD vs. Analog Input Frequency for V DD = 3 V and 5 V0–20–40–80–60–120–100–14003157-0-015SUPPL Y RIPPLE FREQUENCY (kHz)100200300400500P S R R (d B )9001000600700800Figure 6. PSRR vs. Supply Ripple Frequency Without Supply DecouplingFREQUENCY (kHz)S N R (d B )01008192 POINT FFT f SAMPLE = 100kSPS f IN = 30kHz SINAD = 71dB THD =–82dB SFDR =–83dB03157-0-0163050Figure 7. Dynamic Performance for V DD = 5 V CODEDN L E R R O R (L S B )1.00.80.60.20.4–0.2–0.4–0.6–0.80–1.0102430722048409603157-0-017Figure 8. Typical DNL for the AD7457 for V DD = 5 VCODEI N L ER R O R (L S B )1.00.80.60.20.4–0.2–0.4–0.6–0.80–1.0102430722048409603157-0-018Figure 9. Typical INL for the AD7457 for V DD = 5 VCODES01,0002,0003,0004,0005,0006,0007,0008,0009,00010,00003157-0-019C O U N T SFigure 10. Histogram of 10,000 Conversions of a DC InputAD7457Rev. A | Page 9 of 20V REF (V)C H A N G E I ND N L (L S B )4.03.52.53.01.51.02.00.50–0.5–1.01.00.51.5 3.02.52.03.503157-0-020Figure 11. Changes in DNL vs. V REF for V DD = 5 VV REF (V)C H A N G E I N I N L (L S B )543120–1–203157-0-021Figure 12. Change in INL vs. V REF for V DD = 5 VV REF (V)E F F E C T I V E N U M B E R O F B I T S (L S B )121110897601.00.5 1.5 3.02.52.03.503157-0-022Figure 13. ENOB vs. V REF for V DD = 3 V and 5 VAD7457Rev. A | Page 10 of 20TERMINOLOGYSignal to (Noise + Distortion) Ratio (SINAD)The measured ratio of SINAD at the output of the ADC. The signal is the rms amplitude of the fundamental. Noise is the sum of all nonfundamental signals up to half the sampling frequency (f S /2), excluding dc. The ratio is dependent on the number of quantization levels in the digitization process; the more levels, the smaller the quantization noise. The theoretical SINAD ratio for an ideal N-bit converter with a sine wave input is given by()()dB 76.102.6+=+N Distortion Noise to Signal Therefore, for a 12-bit converter, the SINAD is 74 dB.Total Harmonic Distortion (THD)The ratio of the rms sum of harmonics to the fundamental. For the AD7457, it is defined as()1262524232220dB V V V V V V log THD ++++=where:V 1 is the rms amplitude of the fundamental.V 2, V 3, V 4, V 5, and V 6 are the rms amplitudes of the second to the sixth harmonics.Peak Harmonic or Spurious NoiseThe ratio of the rms value of the next largest component in the ADC output spectrum (up to f S /2 and excluding dc) to the rms value of the fundamental. Normally, the value of this specifica-tion is determined by the largest harmonic in the spectrum, but, for ADCs where the harmonics are buried in the noise floor, it is a noise peak.Intermodulation DistortionWith inputs consisting of sine waves at two frequencies, fa and fb, any active device with nonlinearities creates distortion prod-ucts at sum and difference frequencies of mfa ± nfb, where m, n = 0, 1, 2, 3, and so on. Intermodulation distortion terms are those for which neither m nor n are equal to zero. For example, the second order terms include (fa + fb) and (fa − fb), while the third order terms include (2fa + fb), (2fa − fb), (fa + 2fb) and (fa − 2fb).The AD7457 is tested using the CCIF standard, where two input frequencies near the top end of the input bandwidth are used. In this case, the second order terms are usually distanced in fre-quency from the original sine waves, while the third order terms are usually at a frequency close to the input frequencies. As a result, the second and third order terms are specified separately. The calculation of the intermodulation distortion is as per the total harmonic distortion specification, where it is the ratio of the rms sum of the individual distortion products to the rms amplitude of the sum of the fundamentals expressed in dB. Aperture DelayThe amount of time from the leading edge of the sampling clock until the ADC actually takes the sample.Aperture JitterThe sample-to-sample variation in the effective point in time at which the actual sample is taken.Full-Power BandwidthThe full-power bandwidth of an ADC is that input frequency at which the amplitude of the reconstructed fundamental is reduced by 0.1 dB or 3 dB for a full-scale input.Integral Nonlinearity (INL)The maximum deviation from a straight line passing through the endpoints of the ADC transfer function.Differential Nonlinearity (DNL)The difference between the measured and the ideal 1 LSB change between any two adjacent codes in the ADC.Offset ErrorThe deviation of the first code transition (000...000 to 000...001) from the ideal (that is, AGND + 1 LSB).Gain ErrorThe deviation of the last code transition (111...110 to 111...111) from the ideal (that is, V REF − 1 LSB), after the offset error has been adjusted out.Track-and-Hold Acquisition TimeThe minimum time required for the track-and-hold amplifier to remain in track mode for its output to reach and settle to within 0.5 LSB of the applied input signal.Power Supply Rejection Ratio (PSRR)The ratio of the power in the ADC output at full-scalefrequency, f, to the power of a 100 mV p-p sine wave applied to the ADC V DD supply of frequency fs. The frequency of this input varies from 1 kHz to 1 MHz.PSRR (dB) = 10 log(Pf/Pfs )Pf is the power at frequency f in the ADC output; Pfs is the power at frequency fs in the ADC output.分销商库存信息: ANALOG-DEVICES AD7457BRTZ-REEL7。
电子元器件芯片AD780BRZ-REEL7中文规格书
AD4000/AD4004/AD4008Data Sheet Rev. E | Page 10 of 40ABSOLUTE MAXIMUM RATINGSNote that the input overvoltage clamp cannot sustain theovervoltage condition for an indefinite amount of time. Table 5.ParameterRating Analog InputsIN+, IN− to GND 1−0.3 V to V REF + 0.4 V or ±130 mA 2 Supply VoltageREF, VIO to GND−0.3 V to +6.0 V VDD to GND−0.3 V to +2.1 V VDD to VIO−6 V to +2.4 V Digital Inputs to GND−0.3 V to VIO + 0.3 V Digital Outputs to GND−0.3 V to VIO + 0.3 V Storage Temperature Range−65°C to +150°C Junction Temperature150°C Lead Temperature Soldering260°C reflow as per JEDEC J-STD-020 ESD RatingsHuman Body Model4 kV Machine Model200 V Field Induced Charged Device Model 1.25 kV 1See the Analog Inputs section for an explanation of IN+ and IN−. 2 Current condition tested over a 10 ms time interval.Stresses at or above those listed under Absolute MaximumRatings may cause permanent damage to the product. This is astress rating only; functional operation of the product at theseor any other conditions above those indicated in the operationalsection of this specification is not implied. Operation beyondthe maximum operating conditions for extended periods mayaffect product reliability.THERMAL RESISTANCE Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. θJA is the natural convection junction-to-ambient thermal resistance measured in a one cubic foot sealed enclosure. θJC is the junction-to-case thermal resistance. Table 6. Thermal Resistance Package Type 1θJA θJC Unit RM-10147 38 °C/W CP-10-9114 33°C/W 1 Test Condition 1: thermal impedance simulated values are based upon use of 2S2P JEDEC PCB. See the Ordering Guide. ESD CAUTIONData SheetAD4000/AD4004/AD4008Rev. E | Page 11 of 40 PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONSREFVDD IN+IN–GND VIO SDI SCK SDO CNV 14956-003Figure 3. 10-Lead MSOP Pin Configuration 1REF 2VDD 3IN+4IN–5GND 10VIO 9SDI 8SCK 7SDO 6CNV AD4000/AD4004/AD4008TOP VIEW (Not to Scale)14956-004NOTES 1.CONNECT THE EXPOSED PAD TO GND.THIS CONNECTION IS NOT REQUIRED TO MEET THE SPECIFIED PERFORMANCE.Figure 4. 10-Lead LFCSP Pin Configuration1AI is analog input, P is power, DI is digital input, and DO is digital output.2 N/A means not applicable.。
MEMORY存储芯片ADM3485EARZ-REEL7中文规格书
Logic Inputs Input Low Voltage Input High Voltage Logic Input Current
ADM3485E
RO
R
RE
B
A DE
DI
D
03338-001
Figure 1.
should be enabled at any time, the output of a disabled or powered-down driver is tristated to avoid overloading the bus. The receiver has a fail-safe feature that ensures a logic high output when the inputs are floating. Excessive power dissipation caused by bus contention or by output shorting is prevented with a thermal shutdown circuit. The part is fully specified over the industrial temperature range and is available in an 8-lead narrow SOIC package.
ADM3485E
SPECIFICATIONS
AD9954芯片资料中文版
AD9954- Direct Digital Synthesizer400 MSPS 14-Bit, 1.8 V CMOS功能: (2)应用 (2)概述 (2)AD9954电气特性 (3)最大操作范围 (4)Table 2. (4)管脚定义 (4)管脚功能描述 (4)典型的性能特性 (6)原理 (7)器件块 (7)控制寄存器位描述 (10)Other Register Descriptions 其他寄存器描述 (14)Programming AD9954 Features-- AD9954编程特性 (18)SERIAL PORT OPERATION串口操作 (19)INSTRUCTION BYTE指令字节 (20)SERIAL INTERFACE PORT PIN DESCRIPTION串行接口管脚描述 (20)MSB/LSB TRANSFERS (20)RAM I/O VIA SERIAL PORT (21)Power-Down Functions of the AD9954 AD9954省电功能 (21)功能:400MSPS 内部时钟 集成14位DAC可编程相位/幅度抖动 32位控制字相位噪声小于等于-120dbc/Hz@1kHz(DAC 输出)出色的动态性能>80db SFDR@160MHz (偏离100KHz ) 串行I/O 口控制 超高速模拟比较器 自动线性和非线性扫频能力 4种频率/相位偏移坡面 1.8v 电压供电软件或者硬件控制休眠内部集成1024字节*32位RAM 大多数输入口支持5v 电平PLL REFCLK 乘法器(4倍-20倍) 单晶振驱动内部时钟 相位调制能力 多芯片同步 应用敏捷LO 频率输出 可编程的时钟发生器雷达和扫频系统中的FM 啁啾源自动雷达测试和测量设备 声光设备驱动概述AD9954具有一个14位DAC 最高达400 MSPS 的DDS 。
AD9954使用了先进的DDS 技术,内部集成高速,高性能的DAC 形成数字可编程,完整的高频合成器,能产生高达200MHz 模拟正弦波的能力。
FPGA可编程逻辑器件芯片AD8552ARZ-REEL7中文规格书
With an offset voltage of only 1 μV and drift of 0.005 μV/°C, the AD8551/AD8552/AD8554 are perfectly suited for applications in which error sources cannot be tolerated. Temperature, position and pressure sensors, medical equipment, and strain gage amplifiers benefit greatly from nearly zero drift over their operating temperature range. The rail-to-rail input and output swings provided by the AD8551/AD8552/AD8554 make both high-side and low-side sensing easy.
ADG636YRUZ-REEL7中文资料
1 pC Charge Injection, 100 pA Leakage,CMOS, ±5 V/+5 V/+3 V Dual SPDT SwitchADG636 Rev. AInformation furnished by Analog Devices is believed to be accurate and reliable. However, noresponsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. T rademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, M A 02062-9106, U.S.A. Tel: 781.329.4700 Fax: 781.461.3113 ©2002–2008 Analog Devices, Inc. All rights reserved.FEATURES1 pC charge injection±2.7 V to ±5.5 V dual supply+2.7 V to +5.5 V single supplyAutomotive temperature range: −40°C to +125°C 100 pA (maximum at 25°C) leakage currents85 Ω typical on resistanceRail-to-rail operationFast switching timesTypical power consumption (<0.1 μW)TTL-/CMOS-compatible inputs14-lead TSSOP packageAPPLICATIONSAutomatic test equipmentData acquisition systemsBattery-powered instrumentsCommunication systemsSample-and-hold systemsRemote-powered equipmentAudio and video signal routingRelay replacementAvionics FUNCTIONAL BLOCK DIAGRAMD1D2A1EN02754-1Figure 1.GENERAL DESCRIPTIONThe ADG636 is a monolithic device, comprising two indepen-dently selectable CMOS single pole, double throw (SPDT) switches. When on, each switch conducts equally well in both directions.The ADG636 operates from a dual ±2.7 V to ±5.5 V supply, or from a single supply of +2.7 V to +5.5 V.This switch offers ultralow charge injection of ±1.5 pC over the entire signal range and leakage current of 10 pA typical at 25°C. In addition, it offers on resistance of 85 Ω typical, which is matched to within 2 Ω between channels. The ADG636 also has low power dissipation yet is capable of high switching speeds.The ADG636 exhibits break-before-make switching action and is available in a 14-lead TSSOP package. PRODUCT HIGHLIGHTS1.Ultralow charge injection. Q INJ: ±1.5 pC typical over thefull signal range.2.Leakage current <0.25 nA maximum at 85°C.3.Dual ±2.7 V to ±5 V or single +2.7 V to +5.5 V supply.4.Automotive temperature range: −40°C to +125°C.5.Small 14-lead TSSOP package.ADG636Rev. A | Page 2 of 16TABLE OF CONTENTSFeatures .............................................................................................. 1 Applications ....................................................................................... 1 Functional Block Diagram .............................................................. 1 General Description ......................................................................... 1 Product Highlights ........................................................................... 1 Revision History ............................................................................... 2 Specifications ..................................................................................... 3 Dual Supply ................................................................................... 3 Single Supply ................................................................................. 5 Absolute Maximum Ratings ............................................................9 ESD Caution...................................................................................9 Pin Configuration and Function Descriptions ........................... 10 Typical Performance Characteristics ........................................... 11 Test Circuits ..................................................................................... 13 Terminology .................................................................................... 15 Outline Dimensions ....................................................................... 16 Ordering Guide .. (16)REVISION HISTORY8/08—Rev. 0 to Rev. AUpdated Format .................................................................. U niversal Changes to Analog Switch Parameter ............................................ 3 Changes to Analog Switch Parameter ............................................ 5 Changes to Analog Switch Parameter ............................................ 7 Change to I DD Parameter .................................................................. 8 Changes to Absolute Maximum Ratings ....................................... 9 Added Table 5; Renumbered Sequentially .................................. 10 Moved Truth Table ......................................................................... 10 Added Endnote to Table 6 ............................................................. 10 Changes to Figure 19 ...................................................................... 13 Updated Outline Dimensions ....................................................... 16 Changes to Ordering Guide . (16)1/02—Revision 0: Initial VersionADG636Rev. A | Page 3 of 16SPECIFICATIONSDUAL SUPPLYV DD = 5 V ± 10%, V SS = −5 V ± 10%, GND = 0 V . All specifications −40°C to +125°C, unless otherwise noted. Table 1.Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range V SS to V DD V V DD = +4.5 V, V SS = −4.5 V On Resistance, R ON 85 Ω typ V S = ±3 V, I DS = −1 mA, Figure 14 115 140 160 Ω max V S = ±3 V, I DS = −1 mA, Figure 14On-Resistance Match BetweenChannels, ΔR ON2 Ω typ V S = ±3 V, I DS = −1 mA4 5.5 6.5 Ω max V S = ±3 V, I DS = −1 mA On-Resistance Flatness, R FLAT(ON) 25 Ω typ V S = ±3 V, I DS = −1 mA 40 55 60 Ω max V S = ±3 V, I DS = −1 mA LEAKAGE CURRENTS V DD = +5.5 V, V SS = −5.5 V Source Off Leakage, I S (Off) ±0.01 nA typ V S = ±4.5 V, V D = 4.5 V, Figure 15 ±0.1 ±0.25 ±2 nA max V S = ±4.5 V, V D = 4.5 V, Figure 15Drain Off Leakage, I D (Off) ±0.01 nA typ V S = ±4.5 V, V D = 4.5 V, Figure 15 ±0.1 ±0.25 ±2 nA max V S = ±4.5 V, V D = 4.5 V, Figure 15Channel On Leakage, I D (On), I S (On) ±0.01 nA typ V S = V D = ±4.5 V, Figure 16 ±0.1 ±0.25 ±6 nA max V S = V D = ±4.5 V, Figure 16DIGITAL INPUTS Input High Voltage, V INH 2.4 V min Input Low Voltage, V INL 0.8 V max Input Current, I INL or I INH 0.005 μA typ V IN = V INL or V INH ±0.1 μA max V IN = V INL or V INH Digital Input Capacitance, C IN 2 pF typDYNAMIC CHARACTERISTICS 1Transition Time 70 ns typ V S1A = +3 V, V S1B = −3 V, R L = 300 Ω,C L = 35 pF, Figure 17100 120 150 ns max V S1A = +3 V, V S1B = −3 V, R L = 300 Ω,C L = 35 pF, Figure 17t ON Enable 100 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19135 170 190 ns max R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19t OFF Enable 55 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 1980 90 100 ns max R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19Break-Before-Make Time Delay, t BBM 20 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 1810 ns min R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 18Charge Injection −1.2 pC typ V S = 0 V, R S = 0 Ω, C L = 1 nF,Figure 20Off Isolation −65 dB typ R L = 50 Ω, C L = 5 pF, f = 10 MHz,Figure 21Channel-to-Channel Crosstalk −65 dB typ R L = 50 Ω, C L = 5 pF, f = 10 MHz,Figure 23Bandwidth −3 dB 610 MHz typ R L = 50 Ω, C L = 5 pF, Figure 22ADG636Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments C S (Off) 5 pF typ f = 1 MHzC D (Off) 8 pF typ f = 1 MHzC D (On), C S (On) 8 pF typ f = 1 MHzPOWER REQUIREMENTS V DD = +5.5 V, V SS = −5.5 VI DD0.001 μA typ Digital inputs = 0 V or 5.5 V1.0 μA max Digital inputs = 0 V or 5.5 VI SS0.001 μA typ Digital inputs = 0 V or 5.5 V1.0 μA max Digital inputs = 0 V or 5.5 V 1 Guaranteed by design; not subject to production test.Rev. A | Page 4 of 16ADG636Rev. A | Page 5 of 16SINGLE SUPPLYV DD = 5 V ± 10%, V SS = 0 V , GND = 0 V . All specifications −40°C to +125°C, unless otherwise noted. Table 2.Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V DD V V DD = 4.5 V, V SS = 0 V On Resistance, R ON 210 Ω typ V S = 3.5 V, I DS = −1 mA, Figure 14 290 350 380 Ω max V S = 3.5 V, I DS = −1 mA, Figure 14On Resistance Match Between Channels, ΔR ON 3 Ω typ V S = 3.5 V, I DS = −1 mA 12 13 Ω max V S = 3.5 V, I DS = −1 mA LEAKAGE CURRENTS V DD = 5.5 V Source Off Leakage, I S (Off) ±0.01 nA typ V S = 1 V/4.5 V, V D = 4.5 V/1 V,Figure 15±0.1 ±0.25 ±2 nA max V S = 1 V/4.5 V, V D = 4.5 V/1 V,Figure 15Drain Off Leakage, I D (Off) ±0.01 nA typ V S = 1 V/4.5 V, V D = 4.5 V/1 V,Figure 15±0.1 ±0.25 ±2 nA max V S = 1 V/4.5 V, V D = 4.5 V/1 V,Figure 15Channel On Leakage, I D (On), I S (On) ±0.01 nA typ V S = V D = 4.5 V/1 V, Figure 16 ±0.1 ±0.25 ±6 nA max V S = V D = 4.5 V/1 V, Figure 16DIGITAL INPUTS Input High Voltage, V INH 2.4 V min Input Low Voltage, V INL 0.8 V max Input Current, I INL or I INH 0.005 μA typ V IN = V INL or V INH ±0.1 μA max V IN = V INL or V INH Digital Input Capacitance, C IN 2 pF typ DYNAMIC CHARACTERISTICS 1 Transition Time 90 ns typ V S1A = 3 V, V S1B = 0 V, R L = 300 Ω,C L = 35 pF, Figure 17150 185 210 ns max V S1A = 3 V, V S1B = 0 V, R L = 300 Ω,C L = 35 pF, Figure 17t ON Enable 135 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19180 235 275 ns max R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19t OFF Enable 70 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19105 120 135 ns max R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 19Break-Before-Make Time Delay, t BBM 30 ns typ R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 1810 ns min R L = 300 Ω, C L = 35 pF, V S = 3 V,Figure 18Charge Injection 0.3 pC typ V S = 0 V, RS = 0 Ω, C L = 1 nF, Figure 20Off Isolation −60 dB typ R L = 50 Ω, C L = 5 pF , f = 10 MHz,Figure 21Channel-to-Channel Crosstalk −65 dB typ R L = 50 Ω, C L = 5 pF , f = 10 MHz,Figure 23Bandwidth −3 dB 530 MHz typ R L = 50 Ω, C L = 5 pF, Figure 22C S (Off) 5 pF typ f = 1 MHz C D (Off) 8 pF typ f = 1 MHz C D (On), C S (On) 8 pF typ f = 1 MHzADG636Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments POWER REQUIREMENTS V DD = 5.5 VI DD0.001 μA typ Digital inputs = 0 V or 5.5 V1.0 μA max Digital inputs = 0 V or 5.5 V1 Guaranteed by design; not subject to production test.Rev. A | Page 6 of 16ADG636Rev. A | Page 7 of 16V DD = 3 V ± 10%, V SS = 0 V , GND = 0 V . All specifications −40°C to +125°C, unless otherwise noted. Table 3.Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V DD V V DD = 2.7 V, V SS = 0 V On Resistance, R ON 380 420 460 Ω typ V S = 1.5 V, I DS = −1 mA, Figure 14On Resistance Match Between Channels, ΔR ON 5 Ω typ V S = 1.5 V, I DS = −1 mA LEAKAGE CURRENTS V DD = 3.3 V Source Off Leakage, I S (Off) ±0.01 nA typ V S = 1 V/3 V, V D = 3 V/1 V,Figure 15±0.1 ±0.25 ±2 nA max V S = 1 V/3 V, V D = 3 V/1 V,Figure 15Drain Off Leakage, I D (Off) ±0.01 nA typ V S = 1 V/3 V, V D = 3 V/1 V,Figure 15±0.1 ±0.25 ±2 nA max V S = 1 V/3 V, V D = 3 V/1 V,Figure 15Channel On Leakage, I D (On), I S (On) ±0.01 nA typ V S = V D = 1 V/3 V, Figure 16 ±0.1 ±0.25 ±6 nA max V S = V D = 1 V/3 V, Figure 16DIGITAL INPUTS Input High Voltage, V INH 2.0 V min Input Low Voltage, V INL 0.8 V max Input Current, I INL or I INH 0.005 μA typ V IN = V INL or V INH ±0.1 μA max V IN = V INL or V INH Digital Input Capacitance, C IN 2 pF typ DYNAMIC CHARACTERISTICS 1 Transition Time 170 ns typ V S1A = 2 V, V S1B = 0 V, R L = 300 Ω,C L = 35 pF, Figure 17320 390 450 ns max V S1A = 2 V, V S1B = 0 V, R L = 300 Ω,C L = 35 pF, Figure 17t ON Enable 250 ns typ R L = 300 Ω, C L = 35 pF, V S = 2 V,Figure 19360 460 530 ns max R L = 300 Ω, C L = 35 pF, V S = 2 V,Figure 19t OFF Enable 110 ns typ R L = 300 Ω, C L = 35 pF, V S = 2 V,Figure 19175 205 230 ns max R L = 300 Ω, C L = 35 pF, V S = 2 V,Figure 19Break-Before-Make Time Delay, t BBM 80 ns typ R L = 300 Ω, C L = 35 pF , V S1 = 2 V,Figure 1810 ns min R L = 300 Ω, C L = 35 pF , V S1 = 2 V,Figure 18Charge Injection 0.6 pC typ V S = 0 V, R S = 0 Ω, C L = 1 nF,Figure 20Off Isolation −60 dB typ R L = 50 Ω, C L = 5 pF , f = 10 MHz,Figure 21Channel-to-Channel Crosstalk −65 dB typ R L = 50 Ω, C L = 5 pF , f = 10 MHz,Figure 23Bandwidth −3 dB 530 MHz typ R L = 50 Ω, C L = 5 pF, Figure 22C S (Off) 5 pF typ f = 1 MHz C D (Off) 8 pF typ f = 1 MHz C D (On), C S (On) 8 pF typ f = 1 MHzADG636Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments POWER REQUIREMENTS V DD = 3.3 VI DD0.001 μA typ Digital inputs = 0 V or 3.3 V1.0 μA max Digital inputs = 0 V or 3.3 V 1 Guaranteed by design; not subject to production test.Rev. A | Page 8 of 16ADG636Rev. A | Page 9 of 16ABSOLUTE MAXIMUM RATINGST A = 25°C, unless otherwise noted. Table 4.Parameter RatingV DD to V SS 13 VV DD to GND −0.3 V to +6.5 VV SS to GND +0.3 V to −6.5 VAnalog Inputs 1 V SS − 0.3 V to V DD + 0.3 VDigital Inputs 1 −0.3 V to V DD + 0.3 V or30 mA, whicheveroccurs first Peak Current, S or D (Pulsed at 1 ms,10% Duty Cycle Maximum)20 mA Continuous Current, S or D 10 mA Operating Temperature Range −40°C to +125°C Storage Temperature Range −65°C to +150°C Junction Temperature 150°CTSSOP PackageθJA Thermal Impedance 150°C/W θJC Thermal Impedance 27°C/W Lead Soldering Lead Temperature, Soldering (10 sec) 300°C IR Reflow, Peak Temperature (<20 sec) 220°C Pb-Free Soldering Reflow, Peak Temperature 260(+0/−5)°C Time at Peak Temperature 20 sec to 40 sec1Overvoltages at EN, A0, A1, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given.Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ESD CAUTIONADG636Rev. A | Page 10 of 16PIN CONFIGURATION AND FUNCTION DESCRIPTIONSA0EN V SS S1A S1BD1NCA1GND V DD S2A S2B D2NCNC = NO CONNECT02754-002Figure 2. Pin ConfigurationTable 5. Pin Function DescriptionsPin number Mnemonic Description1 A0 Digital Input (LSB).2 EN Active High Digital Input.3 V SS Negative Power Supply. For single-supply operation, connect this pin to GND.4 S1A Source Terminal. Can be an input or output.5 S1B Source Terminal. Can be an input or output.6 D1 Drain Terminal. Can be an input or output.7 NC Not Electrically Connected.8 NC Not Electrically Connected.9 D2 Drain Terminal. Can be an input or output. 10 S2B Source Terminal. Can be an input or output. 11 S2A Source Terminal. Can be an input or output. 12 V DD Positive Power Supply.13 GND Ground (0 V) Power Supply. 14 A1Digital Input (MSB).Table 6. Truth TableA1 A0 EN On Switch X 1X 10 None 0 0 1 S1A, S2A 0 1 1 S1B, S2A 1 0 1 S1A, S2B 1 1 1 S1A, S2B1X = logic state doesn’t matter; it can be either 0 or 1.Rev. A | Page 11 of 16TYPICAL PERFORMANCE CHARACTERISTICSV D ,V S (V)O N R E S I S T A N C E (Ω)02754-003Figure 3. On Resistance vs. V D (V S), Dual Supply 600V D , V S (V)O N R E S I S T A N C E (Ω)30050040020010002754-004Figure 4. On Resistance vs. V D (V S ), Single Supply V D , V S (V)O N R E S I S T A N C E (Ω)1808014012060201601004002754-005Figure 5. On Resistance vs. V D (V S) for Different Temperatures, Dual Supply V D ,V S (V)O N R E S I S T A N C E (Ω)02754-006Figure 6. On Resistance vs. V D (V S ) for Different Temperatures, Single SupplyTEMPERATURE (°C)C U R R E N T (n A )6040801001202002754-007Figure 7. Leakage Currents vs. Temperatures, Dual Supply–15TEMPERATURE (°C)C U R R E N T (n A )–3–1–5–7–13–11–902754-008Figure 8. Leakage Currents vs. Temperature, Single SupplyRev. A | Page 12 of 16–2.0V S (V)C H A R G E I N J E C T I O N (p C )–1.5–1.0–0.5–5–454–3–2–1321002754-009Figure 9. Charge Injection vs. Source VoltageT I M E (n s )TEMPERATURE (°C)6040–408010012020–2002754-010Figure 10. t ON /t OFFEnable Timing vs. Temperature –90–80–70–60–50–40–30–20–10A T T E N U A T I O N (d B )02754-011FREQUENCY (MHz)1000100100.31Figure 11. Off Isolation vs. FrequencyFREQUENCY (MHz)A T T E N U A T I O N (dB )02754-012Figure 12. Crosstalk vs. FrequencyFREQUENCY (MHz)1000100100.31–18–16–14–12–10–8–6–4–2A T T E N U A T I O N (d B )02754-013Figure 13. On Response vs. FrequencyRev. A | Page 13 of 16TEST CIRCUITSV 02754-014V02754-01502754-016Figure 14. On Resistance Figure 15. Off LeakageFigure 16. On LeakageVOUTIN )V OUTTRANSITION02754-017Figure 17. Transition Time, t TRANSITIONVV OUTIN )V OUT0V3V 02754-018Figure 18. Break-Before-Make Delay, t BBMOUTV ENABLE IN )OUTPUT0V3VOFF V OUT0V02754-019Figure 19. Enable Delay, t ON (EN), t OFF (EN)Rev. A | Page 14 of 16OUTSW ONV INSW OFFV OUTV INSW OFFSW ON SW OFFSW OFFCHARGE INJECTION =ΔV OUT ×C L02754-020Figure 20. Charge InjectionOFF ISOLATION = 20logV OUT V S02754-021Figure 21. Off IsolationINSERTION LOSS = 20logV OUT WITH SWITCH V OUT WITHOUT SWITCH02754-022Figure 22. BandwidthCHANNEL-TO-CHANNEL CROSSTALK = 20logV OUT V SL Ω02754-023Figure 23. Channel-to-Channel CrosstalkTERMINOLOGYV DDMost positive supply potential.V SSMost negative power supply in a dual-supply application.In single-supply applications, this should be tied to ground at the device.GNDGround (0 V) reference.I DDPositive supply current.I SSNegative supply current.SSource terminal. May be an input or output.DDrain terminal. May be an input or output.R ONOhmic resistance between Terminal D and Terminal S.ΔR ONOn resistance match between any two channels (that is,R ON max − R ON min).R FLAT(ON)Flatness is defined as the difference between the maximum and minimum values of on resistance as measured over the specified analog signal range.I S (Off)Source leakage current with the switch off.I D (Off)Drain leakage current with the switch off.I D (On), I S (On)Channel leakage current with the switch on.V D, V SAnalog voltage on Terminal D and Terminal S.V INLMaximum input voltage for Logic 0.V INHMinimum input voltage for Logic 1. I INL(IINH)Input current of the digital input.C S (Off)Channel input capacitance for the off condition.C D (Off)Channel output capacitance for the off condition.C D (On), C S (On)On switch capacitance.C INDigital input capacitance.t ON (EN)Delay time between the 50% and 90% points of the digital input and the switch on condition.t OFF (EN)Delay time between the 50% and 90% points of the digital input and the switch off condition.t TRANSITIONDelay time between the 50% and 90% points of the digital input and the switch on condition when switching from one address state to another.t BBMOff time or on time measured between the 80% points of both switches when switching from one address state to another. Charge InjectionA measure of the glitch impulse transferred from the digital input to the analog output during switching.CrosstalkA measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance.Off IsolationA measure of unwanted signal coupling through an off switch. BandwidthThe frequency response of the on switch.Insertion LossLoss due to the on resistance of the switch.Rev. A | Page 15 of 16Rev. A | Page 16 of 16OUTLINE DIMENSIONSCOMPLIANT TO JEDEC STANDARDS MO-153-AB-1061908-ACONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES)ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.0.30 (0.012)0.19 (0.007)COPLANARITY 0.10 (0.004)Figure 24. 14-Lead Thin Shrink Small Outline Package [TSSOP](RU-14)Dimensions shown in millimeters and (inches)ORDERING GUIDEModelTemperature Range Package DescriptionPackage Option ADG636YRU−40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG636YRU-REEL −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG636YRUZ 1−40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG636YRUZ-REEL 1 −40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-14 ADG636YRUZ-REEL 71−40°C to +125°C 14-Lead Thin Shrink Small Outline Package [TSSOP] RU-141Z = RoHS Compliant Part.©2002–2008 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D02754-0-8/08(A)。
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250 kSPS, 12-Bit Impedance Converter,Network AnalyzerAD5934 Rev.0Information furnished by Analog Devices is believed to be accurate and reliable.However, no responsibility is assumed by Analog Devices for its use, nor for anyinfringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: Fax: 781.461.3113© 2005 Analog Devices, Inc. All rights reserved.FEATURESProgrammable output peak-to-peak excitation voltage to a max frequency of 100 kHzProgrammable frequency sweep capability withserial I2C® interfaceFrequency resolution of 27 bits (<0.1 Hz)Impedance measurement range from 100 Ω to 10 MΩ Phase measurement capabilitySystem accuracy of 0.5%2.7 V to 5.5 V power supply operationTemperature range −40°C to +125°C16-lead SSOP packageAPPLICATIONSElectrochemical analysisBioelectrical impedance analysisImpedance spectroscopyComplex impedance measurementCorrosion monitoring and protection equipment Biomedical and automotive sensorsProximity sensingNondestructive testingMaterial property analysisFuel/battery cell condition monitoring GENERAL DESCRIPTIONThe AD5934 is a high precision impedance converter system solution which combines an on-board frequency generator with a 12-bit, 250 kSPS, analog-to-digital converter (ADC). The frequency generator allows an external complex impedance to be excited with a known frequency. The response signal from the impedance is sampled by the on-board ADC and a discrete Fourier transform (DFT) is processed by an on-board DSP engine. The DFT algorithm returns a real (R) and imaginary (I) data-word at each output frequency.The magnitude of the impedance and relative phase of the impedance at each frequency point along the sweep is easily calculated using the following two equations:22IRMagnitude+=)/(1RITanPhase−=Table 1. Related DevicesPart No. DescriptionAD5933 2.7 V to 5.5 V. 1 MSPS, 12-bit impedance, withinternal temperature sensor, 16-lead SSOP.FUNCTIONAL BLOCK DIAGRAM0 Figure 1.AD5934Rev. 0 | Page 2 of 32TABLE OF CONTENTSFeatures..............................................................................................1 Applications.......................................................................................1 General Description.........................................................................1 Functional Block Diagram..............................................................1 Specifications.....................................................................................3 I 2C Serial Interface Timing Characteristics..................................5 Absolute Maximum Ratings............................................................6 ESD Caution..................................................................................6 Pin Configuration and Descriptions..............................................7 Typical Performance Characteristics.............................................8 Terminology....................................................................................10 System Description.........................................................................11 Transmit Stage.............................................................................12 Frequency Sweep Command Sequence...................................13 Receive Stage...............................................................................13 DFT Operation...........................................................................13 Impedance Calculation..................................................................14 Magnitude Calculation..............................................................14 Gain Factor Calculation............................................................14 Impedance Calculation Using Gain Factor.............................14 Gain Factor Variation with Frequency....................................14 Two-Point Calibration...............................................................15 Two-Point Gain Factor Calculation.........................................15 Gain Factor Setup Configuration.............................................15 Gain Factor Recalculation (15)Gain Factor Temperature Variation.........................................16Impedance Error........................................................................16 Performing a Frequency Sweep....................................................18 Register Map...................................................................................19 Control Register.........................................................................19 Start Frequency Register...........................................................20 Frequency Increment Register..................................................20 Number of Increments Register...............................................21 Number of Settling Time Cycles Register...............................21 Status Register.............................................................................22 Real and Imaginary Data Registers (16 Bits)..........................22 Serial Bus Interface.........................................................................23 General I 2C Timing....................................................................23 Writing/Reading to the AD5934..............................................24 Block Write..................................................................................24 AD5934 Read Operations.........................................................25 Typical Applications.......................................................................26 Biomedical: Noninvasive Blood impedance Measurement..26 Sensor/Complex Impedance Measurement............................26 Electro-Impedance Spectroscopy.............................................27 Choosing a Reference for the AD5934........................................28 Layout and Configuration.............................................................29 Power Supply Bypassing and Grounding................................29 Outline Dimensions.......................................................................30 Ordering Guide.. (30)REVISION HISTORY6/05—Revision 0: Initial VersionAD5934Rev. 0 | Page 3 of 32SPECIFICATIONSTest conditions unless otherwise stated: VDD = 3.3 V , MCLK = 16.776 MHz, 2 V p-p output excitation voltage @ 30 kHz, 200 kΩ connected between Pin 5 and Pin 6. Feedback resistor = 200 kΩ connected between Pin 4 and Pin 5. PGA gain = ×1. Table 2.Y Version 1 Parameter Min Typ Max Unit Test Conditions/Comments SYSTEM Impedance Range 0.001 10 MΩ Total System Accuracy 0.5 % System Impedance Error Drift 30 ppm/°C TRANSMIT STAGEOutput Frequency Range 21100 k H z Output Frequency Resolution 0.1 Hz <0.1 Hz resolution achievable usingDDS techniques.MCLK Frequency 16.776 MHz Maximum system clock frequency. TRANSMIT OUTPUT VOLTAGE Range 1 AC Output Excitation Voltage 3 1.98 V p-p Refer to Figure 4 for output voltagedistribution.DC Bias 41.48 V DC bias of the AC excitation signal.See Figure 5.DC Output Impedance 200 Ω T A = 25°C.Short-Circuit Current to Ground at VOUT ±5.8mA T A = 25°C. Range 2AC Output Excitation Voltage 30.97 V p-p See Figure 6. DC Bias 4 0.76 V DC bias of output excitation signal.See Figure 7.DC Output Impedance 2.4 kΩShort-Circuit Current to Ground at VOUT ±0.25mA Range 3 AC Output Excitation Voltage 3 0.383 V p-p See Figure 8.DC Bias 40.31 V DC bias of output excitation signal.See Figure 9.DC Output Impedance 1 kΩShort-Circuit Current to Ground at VOUT ±0.20mA Range 4AC Output Excitation Voltage 30.198 V p-p See Figure 10. DC Bias 4 0.173 V DC bias of output excitation signal.See Figure 11.DC Output Impedance 600 ΩShort-Circuit Current to Ground at VOUT±0.15mA Short-Circuit Current to Ground ±0.15 mA SYSTEM AC CHARACTERISTICS Signal-to-Noise Ratio 60 dB Total Harmonic Distortion −52 dB Spurious-Free Dynamic Range Wide Band (0 MHz to 1 MHz) −56 dB Narrowband (±5 kHz) −85 dBAD5934Rev. 0 | Page 4 of 32Y Version 1 Parameter Min Typ Max Unit Test Conditions/Comments RECEIVE STAGE Input Leakage Current 1 nA To VIN pin. Input Capacitance 5 0.01 fF Pin capacitance between VOUT andGND.Feedback Capacitance C FB 3 pF Feedback capacitance around current-to-voltage amplifier; appears in parallelwith feedback resistor.ANALOG-TO-DIGITAL CONVERTER 5Resolution12 bits Sampling Rate 250 kSPS ADC throughput rate. LOGIC INPUTS Input High Voltage (V IH ) 0.7 × VDD Input Low Voltage (V IL ) 0.3 × VDDInput Current 61 μA T A =25°C. Input Capacitance 7 pF T A = 25°C. POWER REQUIREMENTS VDD 2.7 5.5 V IDD (Normal Mode ) 10 15 mA VDD = 3.3 V. 17 25 mA VDD = 5.5 V. IDD (Standby Mode) 7 mA VDD = 3.3 V; see the Control Registersection.9 mA VDD = 5.5 V. IDD (Power-Down Mode) 0.7 5 μA VDD = 3.3 V. 1 8 μA VDD = 5.5 V.1 Temperature range for Y version = −40°C to +125°C, typical at 25°C.2The lower limit of the output excitation frequency can be lowered by scaling the clock supplied to the AD5934. 3The peak-to-peak value of the AC output excitation voltage scales with supply voltage according to the formula given below. VDD is the supply voltage.VDD Voltage itation Output Exc ×=3.32p)-p (V4The DC bias value of the Output excitation voltage scales with supply voltage according to the formula given below. VDD is the supply voltage.VDD Voltage Bias n Excitatio Output ×=3.32(V)5Guaranteed by design or characterization, not production tested. Input capacitance at the VOUT pin is equal to pin capacitance divided by open-loop gain of current-to-voltage amplifier. 6The accumulation of the currents into Pin 8, Pin 15, and Pin 16.AD5934Rev. 0 | Page 5 of 32I 2C SERIAL INTERFACE TIMING CHARACTERISTICSVDD = 2.7 V to 5.5 V . All specifications T MIN to T MAX , unless otherwise noted.1Table 3.Parameter 2Limit at T MIN , T MAXUnit Description F SCL 400 kHz max SCL clock frequency t 1 2. 5 μs min SCL cycle time t 20. 6 μs min t HIGH , SCL high time t 3 1. 3 μs min t LOW , SCL low time t 40. 6 μs min t HD , STA , start/repeated start condition hold time t 5100 ns min t SU , DAT , data setup time t 630. 9 μs max t HD , DAT , data hold time 0 μs min t HD , DAT , data hold time t 70. 6 μs min t SU , STA , setup time for repeated start t 80. 6 μs mint SU , STO , stop condition setup time t 9 1. 3 μs min t BUF , bus free time between a stop and a start condition t 10300 ns max t F , rise time of SDA when transmitting 0 ns min t R , rise time of SCL and SDA when receiving (CMOS compatible) t 11300 ns max t F , fall time of SCL and SDA when transmitting 0 ns min t F , fall time of SDA when receiving (CMOS compatible) 250 ns max t F , fall time of SDA when receiving 20 + 0.1 C B 4ns min t F , fall time of SCL and SDA when transmitting C B 400 pF max Capacitive load for each bus line1 See Figure 2.2Guaranteed by design and characterization, not production tested. 3A master device must provide a hold time of at least 300 ns for the SDA signal (referred to V IH MIN of the SCL signal) in order to bridge the undefined SCL’s falling edge. 4C B is the total capacitance of one bus line in pF. Note that t R and t F are measured between 0.3 VDD and 0.7 VDD.05325-002SCLSDASTART CONDITIONREPEATED START CONDITIONSTOP CONDITIONFigure 2. I 2C Interface Timing DiagramAD5934Rev. 0 | Page 6 of 32ABSOLUTE MAXIMUM RATINGST A = 25°C, unless otherwise note Table 4.Parameter Rating DVDD to GND −0.3 V to + 7. 0 V AVDD1 to GND −0.3 V to + 7. 0 V AVDD2 to GND −0.3 V to + 7. 0 V SDA/SCL to GND −0.3 V to VDD + 0.3 V VOUT to GND −0.3 V to VDD + 0.3 V VIN to GND −0.3 V to VDD + 0.3 V MCLK to GND −0.3 V to VDD + 0.3 V Operating Temperature Range Extended Industrial (Y Grade) −40°C to +125°C Storage Temperature Range −65°C to +160°C Maximum Junction Temperature 150°C SSOP Package θJA Thermal Impedance 139°C/W θJC Thermal Impedance 136°C/W Reflow Soldering (Pb-Free) Peak Temperature 260°C Time at Peak Temperature 10 sec to 40 secStresses above those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.ESD CAUTIONESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.AD5934Rev. 0 | Page 7 of 32PIN CONFIGURATION AND DESCRIPTIONSNCNC NC RFB SCL SDAAGND2AGND1VIN VOUT NC DGND AVDD2AVDD1MCLK DVDDNC = NO CONNECT05325-003Figure 3. Pin ConfigurationIt is recommended to tie all supply connections (Pin 9, Pin 10, and Pin 11) and run from a single supply between 2.7 V and 5.5 V . It is also recommended to connect all ground signals together (Pin 12, Pin 13, and Pin 14). Table 5. Pin Function DescriptionsPin No. Mnemonic Description/comment 1, 2, 3, 7 NC No Connect.4 RFB External Feedback Resistor. Connected from Pin 4 to Pin5 and used to set the gain of the current-to-voltageamplifier on the receive side.5 VIN Input to Receive Transimpedance Amplifier. Presents a virtual earth voltage of VDD/2.6 VOUT Excitation Voltage Signal Output. 8 MCLK Master Clock for the System. Supplied by user. 9 DVDD Digital Supply Voltage. 10 AVDD1 Analog Supply Voltage 1. 11 AVDD2 Analog Supply Voltage 2. 12 DGND Digital Ground. 13 AGND1 Analog Ground 1. 14 AGND2 Analog Ground 2. 15 SDA I 2C Data Input. 16 SCL I 2C Clock Input.AD5934Rev. 0 | Page 8 of 32TYPICAL PERFORMANCE CHARACTERISTICS350N U M B E R O F D E V I C E S30252015105 2.0605325-064VOLTAGE (V)1.921.94 1.96 1.982.00 2.022.04Figure 4. Range 1: Output Excitation Voltage Distribution VDD = 3.3 V1.301.7505325-072VOLTAGE (V)1.35 1.40 1.45 1.50 1.55 1.60 1.651.700N U M B E R O F D E V I C E S30252015105Figure 5. Range 1: DC Bias Distribution VDD = 3.3 V300N U M B E R O F D E V I C E S25201510505325-066VOLTAGE (V)0.950.960.970.980.99 1.00 1.011.02Figure 6. Range 2: Output Excitation Voltage Distribution VDD = 3.3 V0.680.8605325-073VOLTAGE (V)0.700.720.740.760.780.800.820.84300N U M B E R O F D E V I C E S252015105Figure 7. Range 2: DC Bias Distribution VDD = 3.3 V3000.3700.40005325-077VOLTAGE (V)N U M B E R O FD E V I C E S2520151050.3750.3800.3850.3900.395Figure 8. Range 3: Output Excitation Voltage Distribution VDD = 3.3 V0.2900.32005325-074VOLTAGE (V)0.2950.3000.3050.3100.315300N U M B E R O F D E V I C E S252015105Figure 9. Range 3: DC Bias Distribution VDD = 3.3 VAD5934Rev. 0 | Page 9 of 3205325-070VOLTAGE (V)0.1920.1940.1960.1980.2000.2020.2040.206300N U M B E R O F D E V I C E S252015105Figure 10. Range 4: Output Excitation Voltage Distribution VDD = 3.3 V0.1600.20505325-075VOLTAGE (V)0.1650.1700.1750.1800.1850.1900.1950.20030N U M B E R O F D E V I C E S252015105Figure 11. Range 4: DC Bias Distribution VDD = 3.3 V15.810.81805325-088MCLK FREQUENCY (MHz)I D D (m A )15.314.814.313.813.312.812.3246810121416Figure 12. Typical Supply Current vs. AD5934 Clock Frequency0.4–1.0040005325-028PHASE (Degrees)P H A S E E R R O R(D e g r e e s )0.20–0.2–0.4–0.6–0.850100150200250300350Figure 13. Typical AD5934 Phase ErrorAD5934Rev. 0 | Page 10 of 32TERMINOLOGYTotal System AccuracyThe AD5934 can accurately measure a range of impedance values to less than 0.5% of the correct impedance value for supply voltages between 2.7 V to 5.5 V .Spurious-Free Dynamic Range (SFDR)Along with the frequency of interest, harmonics of the fundamental frequency and images of these frequencies are present at the output of a DDS device. The spurious-freedynamic range refers to the largest spur or harmonic present in the band of interest. The wideband SFDR gives the magnitude of the largest harmonic or spur relative to the magnitude of the fundamental frequency in the 0 to Nyquist bandwidth. The narrow-band SFDR gives the attenuation of the largest spur or harmonic in a bandwidth of ±200 kHz, about the fundamental frequency.Signal-to-Noise Ratio (SNR)SNR is the ratio of the rms value of the measured output signal to the rms sum of all other spectral components below the Nyquist frequency. The value for SNR is expressed in decibels. Total Harmonic Distortion (THD)THD is the ratio of the rms sum of harmonics to the fundamental, where V1 is the rms amplitude of the fundamental and V2, V3, V4, V5, and V6 are the rms amplitudes of the second through the sixth harmonics. For the AD5934, THD is defined as165432V V V V V V THD 22222log20)db (++++=AD5934SYSTEM DESCRIPTIONFigure 14. AD5934 Block OverviewThe AD5934 is a high precision impedance converter system solution which combines an on-board frequency generator with a 12-bit, 250 kSPS ADC. The frequency generator allows an external complex impedance to be excited with a known frequency. The response signal from the impedance is sampled by the on-board ADC and DFT processed by an on-board DSP engine. The DFT algorithm returns both a real (R) and imaginary (I) data-word at each frequency point along the sweep. The impedance magnitude and phase is easily calculated using the following equations:22I R Magnitude +=)/(1R I Tan Phase −=To characterize an impedance profile Z(ω), generally a frequency sweep is required like that shown in Figure 15.05325-033FREQUENCYI M P E D A N C EFigure 15.The AD5934 permits the user to perform a frequency sweep with a user-defined start frequency, frequency resolution, and number of points in the sweep. In addition, the device allows the user to program the peak-to-peak value of the output sinusoidal signal as an excitation to the external unknown impedance connected between the VOUT and VIN pins.Table 6 gives the four possible output peak-to-peak voltages and the corresponding dc bias levels for each range. Table 6.Output Excitation Voltage Amplitude Output DC Bias Level Range 1: 1.98 V p-p 1.48 V Range 2: 0.99 V p-p 0.74V Range 3: 383 mV p-p 0.31 V Range 4: 198 mV p-p0.179 VThe excitation signal for the transmit stage is provided on-chip using DDS techniques which permit subhertz resolution. The receive stage receives the input signal current from the unknown impedance, performs signal processing, and digitizes the result. The clock for the DDS is generated from an external reference clock which is provided by the user at MCLK.AD5934TRANSMIT STAGEAs shown in Figure 16, the transmit stage of the AD5934 is made up of a 27-bit phase accumulator DDS core which provides the output excitation signal at a particular frequency. The input to the phase accumulator is taken from the contents of the START FREQUENCY register (see RAM Locations 82h, 83h, and 84h). Although the phase accumulator offers 27 bits of resolution, the START FREQUENCY register has the 3 most significant bits (MSBs) set to 0 internally; therefore the user has the ability to program only the lower 24 bits of the START FREQUENCY register.The AD5934 offers a frequency resolution programmable by the user down to 0.1 Hz. The frequency resolution is programmed via a 24-bit word loaded serially over the I 2C interface to the FREQUENCY INCREMENT register.The frequency sweep is fully described by the programming of three parameters: the START FREQUENCY, the FREQUENCY INCREMENT, and the NUMBER OF INCREMENTS.START FREQUENCYThis is a 24-bit word that is programmed to the on-board RAM at Address 82h, Address 83h, and Address 84h (see the Register Map section). The required code loaded to the START FREQUENCY register is the result of the formula shown in Equation 1, based on the master clock frequency and the required start frequency output from the DDS.27216×=⎟⎟⎟⎟⎠⎞⎜⎜⎜⎜⎝⎛⎟⎠⎞⎜⎝⎛MCLK Frequency Start Output Required Code Frequency Start (1) For example, if the user requires the sweep to begin at 30 kHz and has a 16 MHz clock signal connected to MCLK. The code that needs to be programmed is given byl hexidecima 3D70A327216MHz 16kHz 30≡×=⎟⎟⎟⎟⎠⎞⎜⎜⎜⎜⎝⎛⎟⎠⎞⎜⎝⎛Code Frequency Start The user programs 3D hex to Register 82 h, 70 hex to Register 83 h, and A3 hex to Register 84 h.FREQUENCY INCREMENTThis is a 24-bit word that is programmed to the on-board RAM at Address 85 h, Address 86 h, and Address 87 h (see the Register Map section). The required code loaded to thefrequency increment register is the result of the formula shown inEquation 2, based on the master clock frequency and the required increment frequency output from the DDS.27216×=⎟⎟⎟⎟⎠⎞⎜⎜⎜⎜⎝⎛⎟⎠⎞⎜⎝⎛MCLK Increment Frequency Required Code Increment Frequency (2) For example, if the user requires the sweep to have a resolution of10 Hz and has a 16 MHz clock signal connected to MCLK, the code that needs to be programmed is given byl hexidecima 00053E 16MHz 16Hz 10≡⎟⎟⎟⎟⎠⎞⎜⎜⎜⎜⎝⎛⎟⎠⎞⎜⎝⎛=Code Increment FrequencyThe user programs 00 hex to Register 85 h, 05 hex to Register 86 h, and finally 3E hex to Register 87 h.NUMBER OF INCREMENTSThis is a 9-bit word that represents the number of frequencypoints in the sweep. The number is programmed to the on-board RAM at Address 88 h and Address 89 h (see the Register Map section). The maximum number of points that can be programmed is 511.For example, if the sweep needs 150 points, the user programs 00 hex to Register 88 h and 96 hex to Register 89 h.Once the three parameter values have been programmed, the sweep is initiated by issuing a Start Frequency Sweep command to the CONTROL register at Address 80 h and Address 81 h (see the Register Map section). Bit 2 in the STATUS register (Register 8F h) indicates the completion of the frequency measurement for each sweep point. Incrementing to the next frequency sweep point is under the control of the user. The measured result is stored in two registers (94 h, 95 h and 96 h, 97 h) which should be read before issuing an IncrementFrequency command to the CONTROL register to move to the next sweep point. There is the facility to repeat the current frequency point measurement by issuing a Repeat Frequency command to the CONTROL register . This has the benefit of allowing the user to average successive readings. When thefrequency sweep has completed all frequency points, Bit 3 in the STATUS register is set, indicating completion of the sweep . Once this bit is set further increments are disabled.AD5934FREQUENCY SWEEP COMMAND SEQUENCEThe following sequence must be followed to implement a frequency sweep.1. Enter standby mode.Prior to issuing a Start Frequency Sweep command, the device must be placed in a standby mode by issuing an Enter Standby Mode command to the CONTROL register (Register 80 h). In this mode, the VOUT and VIN pins are connected internally to ground so there is no dc bias across the external impedance or between the impedance and ground. 2. Enter initialize mode.In general, high Q complex circuits require a long time to reach steady state. To facilitate the measurement of such impedances, this mode allows the user full control of the settling time requirement before entering start frequency sweep mode where the impedance measurement takes place.An Initialize with Start Frequency Command to theCONTROL register enters initialize mode. In this mode the impedance is excited with the programmed start frequency but no measurement takes place. The user times out the required settling time before issuing a Start Frequency Sweep command to the CONTROL register to enter the start frequency sweep mode.3. Enter start frequency sweep mode.The user enters this mode by issuing a Start Frequency Sweep command to the control register. In this mode, the ADC starts measuring after the programmed Number of Settling Time Cycles has elapsed. The user can program an integer number of output frequency cycles (settling time cycles) to Register 8A h and Register 8B h before beginning the measurement at each frequency point (see Figure 28). The DDS output signal is passed through a programmable gain stage in order to generate the four ranges of peak-to-peak output excitation signals listed in Table 6. The peak-to-peak output excitation voltage is selected by setting Bit D10 and Bit D9 in the CONTROL register—see the Control Register section— and is made available at the VOUT pin.VOUT05325-034RECEIVE STAGEThe receive stage comprises a current–to-voltage amplifier, followed by a programmable gain amplifier (PGA), antialiasing filter, and ADC. The receive stage schematic is shown inFigure 17. The unknown impedance is connected between the VOUT and VIN pins. The first stage current-to-voltage amplifier configuration means that a voltage present at the VIN pin is a virtual ground with a dc value set at VDD/2. The signal current that is developed across the unknown impedance flows into the VIN pin and develops a voltage signal at the output of the current-to-voltage converter. The gain of the current-to voltage amplifier is determined by a user-selectable feedback resistor connected between Pins 4 (RFB) and Pin 5 (VIN). It is important for the user to choose a feedback resistance value which, in conjunction with the selected gain of the PGA stage, maintains the signal within the linear range of the ADC (0 V to VDD).The PGA allows the user to gain the output of the current-to-voltage amplifier by a factor of 5 or 1 depending upon the status of Bit D8 in the CONTROL register (see the Register Map section Register 81h). The signal is then low-pass filtered and presented to the input of the 12-bit, 250 kSPS ADC.05325-038The digital data from the ADC is passed directly to the DSP core of the AD5934 which performs a DFT on the sampled data.DFT OPERATIONA DFT is calculated for each frequency point in the sweep. The AD5934 DFT algorithm is represented by()))sin())(cos(()(10230n j n n x f X n −=∑=where X(f) is the power in the signal at the frequency point f, x(n) is the ADC output, with the cos(n) and sin(n) the sampled test vectors provided by the DDS core at the frequency f .The multiplication is accumulated over 1024 samples for each frequency point. The result is stored in two, 16-bit registersrepresenting the real and imaginary components of the result. The data is stored in twos complement format.。