EGL41D中文资料
SONY TEKTRONIX 390AD 双通道数字波形捕捉仪说明书
TIME—BASE A AND B
Sample Rate Internal — CH 1 Only: 5 Hz to 60 MHz, 23 steps, 1—2—5 se— quence except 30 MHz and 60 MHz. DUAL: 5 Hz to 30 MHz, 22 steps. External — Normal: 30 MHz maximum. CH 1 ONLY: 60 MHz maximum.
The 390AD is designed for use as a system component, thus is fully programmable via the GPIB (IEEE— 488). The 390AD conforms to the Tektronix Standard codes and formats.
True Dual Channel 30 MHz Sampling Rate (60 MHz in Single Channel Mode) 2048 Word Memory Per Chan— nel (4096 Single Channel Mode) 10—Bit Resolution
Bislope Triggering Sample—Rate Switching
Modes — Auto, Norm, Single. Pretrigger Range CH 1 Only Mode — 0 to 4092. Dual Channel Mode — 0 to 2046.
Posttrigger Range Time Base A
A+B
Vertical Mode
Dual CH 1 only
— Ultrasonics/Stress/Strain
D1D40中文资料
Max. Surge Current, [Adc] (10Msec) Max. On-State Voltage Drop @ Rated Current [Vdc] Thermal Resistance Junction to Case RqJC[°C/W] Max On-state Resistance @ Rated Current (R DS-ON ) [Ohms] Max. Off-State Leakage Current @ Rated Voltage [mA] Max. Turn-On Time [µsec]
MAX. SURGE CURRENT (Amps)
Transient Protection
All loads are inductive, even ones that are not so labeled. An inductive load will produce harmful transient voltages when it is turned off. The more perfect the switch, the larger the transient voltages; the MOSFET output is so nearly an ideal switch that the transient voltages produced by seemingly "non-inductive" loads can cause damage if not suppressed. Diodes should be fast recovery type with PIV rated greater than supply voltage.
真假(EGL)霓虹灯管冷极管之分辨
真假(EGL)霓虹灯管/冷极管之分辨How to distinguish the genuine EGL neon products from the fake?EGL是世界上最大的霓虹产品生产商，成立至今已有80余年之久，全球有85个国家、超过10000家标牌公司在制作标牌和建设照明系统时都指定使用EGL的产品及设备。
除了八十多年生产霓虹产品的丰富经验，加上众多知名化学专家科研成果形成的独特的荧光涂粉配方，EGL生产的霓虹灯管较之传统霓虹灯管更为明亮，色泽更为持久。
这种工艺和照明效果是目前霓虹材料市场上出现的假冒EGL霓虹灯管所难以达到的。
正是由于EGL产品具有优良的品质、畅销全球的品牌，以至于在国内市场也出现了众多由非正规厂家生产的假冒伪劣产品，不具有任何质量保证，严重损害了EGL产品客户的利益和EGL品牌的信誉。
为了维护客户的利益，方便客户使用和辨别真伪EGL霓虹灯管、冷阴极管，我们建议客户可以通过以下几点来辨别真伪：1): 看玻璃管的材质EGL霓虹灯管、冷阴极管采用的原料管是美国大厂出品的优质玻璃透明管，材质坚固，大大提高了霓虹灯管户外使用的可靠性，而假冒EGL霓虹灯管所使用的玻璃管，比较脆，容易碰碎。
同时，由美国大厂出品的透明玻璃管，保证了灯管厚度、管壁均匀一致及最高的玻璃纯度：厚度为灯管的坚硬度提供保证，同时，只有均匀的玻璃厚度，才能保证生产制作过程中灯管不致爆裂；而玻璃的纯度则有助于提高灯管的坚韧性。
（假冒灯管的管壁薄弱，厚度不均，容易碎裂。
）另外，在EGL工厂对透明玻璃管进行加工前，工人会在无尘的工作间先用超音波机械清洗玻璃管，清除杂质，从而确保灯管内壁的洁净，为进行涂粉工序提供足够的牢固度。
2): 看灯管涂粉EGL霓虹灯管、冷阴极管采用最上乘的美国稀土荧光粉，结合了专利粘合剂和独特的助剂，以至在最小的弯管度也能发挥其无比的光芒、保持其均匀色泽和不剥落的产品特性。
而且，每一批生产出来的涂粉都使用电脑调配涂粉，使得每次生产出来的灯管的颜色都是一致的，色差极微。
RAL油漆颜色对照表
RAL 1005 Honiggelb
RAL 1006 Maisgelb
RAL 1007 Narzissengelb RAL 1011 Braunbeige RAL 1012 Zitronengelb
CMYK 10 30 100 0 CMYK 5 30 90 0 CMYK 0 40 100 0 CMYK 30 40 70 0 CMYK 10 10 90 0
RAL 6005 Moosgrün
RAL 6006 Grauoliv
RAL 6007 Flaschengrün RAL 6008 Braungrün
RAL 6009 Tannengrün
CMYK 100 60 90 20 CMYK 90 80 90 20 CMYK 80 50 80 60 CMYK 70 50 70 80 CMYK 90 50 90 60
RAL 1013 Perlweiß
RAL 1014 Elfenbein
RAL 1015 Hellelfenbein RAL 1016 Schwefelgelb RAL 1017 Safrangelb
CMYK 0 5 20 10 CMYK 0 10 40 10 CMYK 0 5 30 10 CMYK 10 0 90 0 CMYK 0 30 70 0
RAL 5020 Ozeanblau
RAL 5021 Wasserblau RAL 5022 Nachtblau
RAL 5023 Fernblau
RAL 5024 Pastellblau
CMYK 100 0 40 80 CMYK 100 20 50 10 CMYK 100 100 40 40 CMYK 80 40 10 20 CMYK 70 20 10 20
EGL41B-E396;EGL41D-E396;EGL41G-E396;BYM12-100-E397;BYM12-150-E397;中文规格书,Datasheet资料
Document Number: 88581For technical questions within your region, please contact one of the following: Revision: 15-Mar-11DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ 1This datasheet is subject to change without notice.THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000Surface Mount Glass Passivated Ultrafast RectifierBYM12-50 thru BYM12-400, EGL41A thru EGL41GVishay General SemiconductorFEATURES•Superectifier structure for high reliability condition •Cavity-free glass-passivated junction •Ideal for automated placement •Ultrafast reverse recovery time •Low switching losses, high efficiency •High forward surge capability•Meets environmental standard MIL-S-19500•Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C•AEC-Q101 qualified•Compliant to RoH S Directive 2002/95/EC and in accordance to WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication.MECHANICAL DATACase: DO-213AB, molded epoxy over glass bodyMolding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker testPolarity: Two bands indicate cathode end - 1st band denotes device type and 2nd band denotes repetitive peak reverse voltage ratingPRIMARY CHARACTERISTICSI F(AV) 1.0 A V RRM 50 V to 400 VI FSM 30 A t rr 50 ns V F 1.0 V, 1.25 V T J max.175 °CDO-213AB (GL41)SUPERECTIFIER ®MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOLBYM12-50BYM12-100BYM12-150BYM12-200BYM12-300BYM12-400UNITFAST EFFICIENT DEVICE:1ST BAND IS GREENEGL41A EGL41B EGL41C EGL41D EGL41F EGL41G Polarity color bands (2nd band) Gray Red Pink Orange Brown Yellow Maximum repetitive peak reverse voltage V RRM 50100150200300400V Maximum RMS voltage V RMS 3570105140210280V Maximum DC blocking voltage V DC 50100150200300400VMaximum average forward rectified current at T T = 75 °CI F(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated loadI FSM 30 A Operating junction and storage temperature rangeT J , T STG - 65 to + 175°C/ For technical questions within your region, please contact one of the following:Document Number: 885812DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ Revision: 15-Mar-11This datasheet is subject to change without notice.THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000BYM12-50 thru BYM12-400, EGL41A thru EGL41GVishay General SemiconductorNote(1)Pulse test: 300 μs pulse width, 1 % duty cycleNotes(1)Thermal resistance from junction to ambient, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal (2)Thermal resistance from junction to terminal, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminalNote(1)AEC-Q101 qualifiedRATINGS AND CHARACTERISTICS CURVES(T A = 25 ︒C unless otherwise noted)Fig. 1 - Maximum Forward Current Derating CurveFig. 2 - Maximum Non-Repetitive Peak Forward Surge CurrentELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETER TESTCONDITIONS SYMBOL BYM12-50BYM12-100BYM12-150BYM12-200BYM12-300BYM12-400UNITEGL41A EGL41B EGL41C EGL41D EGL41F EGL41G Max. instantaneous forward voltage 1.0 A V F (1) 1.01.25V Max. DC reverse current at rated DC blocking voltage T A = 25 °C I R (1)5.0μAT A = 125 °C 50Max. reverse recovery time I F = 0.5 A,I R = 1.0 A,I rr = 0.25 A t rr 50ns Typical junction capacitance4.0 V, 1 MHzC J2014pFTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL BYM12-50BYM12-100BYM12-150BYM12-200BYM12-300BYM12-400UNIT EGL41AEGL41BEGL41CEGL41DEGL41FEGL41GMaximum thermal resistanceR θJA(1)60°C/WR θJT (2)30ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODEEGL41D-E3/960.1149615007" diameter plastic tape and reel EGL41D-E3/970.11497500013" diameter plastic tape and reel EGL41DHE3/96 (1)0.1149615007" diameter plastic tape and reel EGL41DHE3/97 (1)0.11497500013" diameter plastic tape and reel/Document Number: 88581For technical questions within your region, please contact one of the following: Revision: 15-Mar-11DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ 3This datasheet is subject to change without notice.THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?91000BYM12-50 thru BYM12-400, EGL41A thru EGL41GVishay General SemiconductorFig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Leakage Characteristics Fig. 5 - Typical Junction CapacitanceFig. 6 - Typical Transient Thermal ImpedancePACKAGE OUTLINE DIMENSIONS in inches (millimeters)/Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000 /分销商库存信息:VISHAY-GENERAL-SEMICONDUCTOREGL41B-E3/96EGL41D-E3/96EGL41G-E3/96 BYM12-100-E3/97BYM12-150-E3/97BYM12-200-E3/97 BYM12-300-E3/97BYM12-400-E3/97BYM12-50-E3/97 EGL41A-E3/97EGL41B-E3/97EGL41C-E3/97 EGL41D-E3/97EGL41F-E3/97EGL41G-E3/97 BYM12-100-E3/96BYM12-150-E3/96BYM12-200-E3/96 BYM12-300-E3/96BYM12-400-E3/96BYM12-50-E3/96 EGL41A-E3/96EGL41C-E3/96EGL41F-E3/96 EGL41B/1EGL41D/1EGL41G/1BYM12-100HE3/97BYM12-150HE3/97BYM12-200HE3/97 BYM12-300HE3/97BYM12-400HE3/97BYM12-50HE3/97 EGL41AHE3/97EGL41BHE3/97EGL41CHE3/97 EGL41DHE3/97EGL41FHE3/97EGL41GHE3/97 BYM12-100HE3/96BYM12-150HE3/96BYM12-200HE3/96 BYM12-300HE3/96BYM12-400HE3/96BYM12-50HE3/96 EGL41AHE3/96EGL41BHE3/96EGL41CHE3/96 EGL41DHE3/96EGL41FHE3/96EGL41GHE3/96。
新编俄罗斯电子器件对照手册资料
俄型号：К１３３ИЕ２十进制计数器说明相应国内外产品К１３３ИЕ２型单片TTL中规模半□中国型号导体集成电路，由四个主从触发器和附加推荐替换 SG5490A门电路组成，功能为具有清零和置9输入生产厂家 4435厂端的负沿触发异步十进制计数器。
其计数□国外型号 SN5490A (美国)长度可以是2、5、10分频。
К１３３ИЕ２主要参数 5490A主要参数 (T A=25℃)К１３３ИЕ２逻辑图和外引线排列 5490A功能表和外引线排列俄型号：К１３３ИЕ５４位二进制计数器说明相应国内外产品К１３３ИЕ５型单片TTL中规模半□中国型号导体集成电路，由四个主从触发器和附加推荐替换 SG5493A门电路组成。
可组成二分频计数器和三级生产厂家 4435厂二进制计数器，具有清零输入端。
□国外型号 SN5493A (美国)AК１３３ИЕ５逻辑图和外引线排列 5493A功能表和外引线排列俄型号：К１３３ЛА２８输入与非门说明相应国内外产品К１３３ЛА２型单片TTL小规模半□中国型号导体集成电路，功能为8输入端与非门。
推荐替换 JT5430生产厂家 4435厂□国外型号 SN5430 (美国)К１３３ЛА２逻辑图和外引线排列 5430逻辑图和外引线排列俄型号：К１３３ЛА３四２输入与非门说明相应国内外产品К１３３ЛА３型单片TTL小规模半□中国型号导体集成电路，由四个独立的而又完全相推荐替换 JT5400同的2输入端与非门组成。
生产厂家 4435厂□国外型号 SN5400 (美国)AК１３３ЛА３逻辑图和外引线排列 5400逻辑图和外引线排列说明相应国内外产品К１３３ЛА４型单片TTL小规模半□中国型号导体集成电路，由三个独立的而又完全相推荐替代 JT5410同的3输入端与非门组成。
生产厂家 4435厂□国外型号 SN5410 (美国)AК１３３ЛА４逻辑图和外引线排列* 5410逻辑图和外引线排列*注：俄产品输出脚顺序与5410不同，选用时应注意。
贝尔德直读光谱仪培训题材
贝尔德直读光谱仪培训题材一. 光电直读光谱分析的应用近况及新发展DV4-1000型光电直读光谱仪，1964年美国贝尔德公司开始生产光谱仪持续生产了DV2、DV4、DV6，从70年代进入中国，直读其实就是直观可见数据的意思。
现在市专场上的光谱有德国的OBLF、斯派克，美国的ARL,国产的瑞利（但国产的缺点是高合金钢和极低含分析误差大）。
DV4-1000中1000是指焦距，曲率半径为1000mm的凹球面镜，光源:KH-3/5 型，重复频率100周（现在新产光源都在400周以上），频率低的缺陷：峰压不稳定，随交流供电的电压和频率的波动造成分析数据的漂移，严重影响分析的精度和准确度。
二. 光电光谱分析的原理.（光谱光室分布图）试样经过激发时，不同元素的原子，在火焰、电弧、火花等光源激发下，由于原子能级跃迁发射出特有的谱线，即“特征谱线”，能通过入射光学系统到光栅上，光栅将光分解成光谱，这些光谱线代表样品中的各个元素，各元素光谱线的强度与样品中元素的含量成比例，每一元素至少有一条光谱线通过出口狭缝，射到光电倍增管的光阴极上，当元素的浓度变化时光谱线的强度也变化，光电倍增管的输出电流也随之变化，除了元素光谱线以外，用一条或更多的光谱线作为内标线它将与元素线相比，通过测量板将从元素电容器送来的模拟分析数据转换成数字信号，然后计算机进行计算元素的含量。
三. 光电光谱的光学系统及光转换1 / 121.罗兰圆（270个出射狭缝），凹面光栅光学系统（其实与我们的光盘CD相适），主要起到光谱线的分散和折射。
使各元素的谱线分别射信对应的光电倍增管的光阴上。
2.光电倍增管的光电转换（能将光谱线射至光阴上产生的光电，放大到几百万倍，以达到测量系统所要求的电流值，此电流可通过同轴电缆送到元素板上进行换算。
）四.用好光电光谱仪的操作要点及注意事项1..光谱仪的外围条件1）.仪器的周围不应有振动，不受阳光的直接照射，散热（风扇），机房温度控制在23 ±2℃,温度（有除湿器，＜60,不然会引起一些电器元件短路烧坏），应有良好的地线越小越好，接地电阻＜4。
AOD4184中文资料
SymbolTyp Max 18224455R θJC2.43Steady-StateMaximum Junction-to-AmbientA,GSteady-State °C/WThermal Characteristics ParameterUnits Maximum Junction-to-AmbientA,Gt ≤ 10s R θJA °C/W °C/W Maximum Junction-to-CaseD,FAOD4184SymbolMin TypMaxUnits BV DSS 40V 1T J =55°C5I GSS ±100nA V GS(th) 1.7 2.23V I D(ON)120A6.78T J =125°C11138.511g FS 100S V SD 0.721V I S20A C iss 1500pF C oss 215pF C rss 135pF R g23.55ΩQ g (10V)27.235.4nC Q g (4.5V)13.6nC Q gs 4.5nC Q gd 6.4nC t D(on) 6.4ns t r 17.2ns t D(off)29.6ns t f 16.8ns t rr 2938ns Q rr26nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.TBDGate Source Charge Gate resistanceV GS =0V, V DS =0V, f=1MHzV GS =10V, V DS =20V, I D =20ATBD Total Gate Charge m ΩTurn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =20V, R L =1Ω, R GEN =3ΩTurn-Off Fall TimeTurn-On DelayTime Gate Drain Charge V GS =0V, V DS =20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, I D =15AI S =1A,V GS =0V V DS =5V, I D =20AMaximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance DYNAMIC PARAMETERS R DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageElectrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions I DSS µA Body Diode Reverse Recovery ChargeI F =20A, dI/dt=100A/µsBody Diode Reverse Recovery Time V GS =10V, I D =20AReverse Transfer Capacitance I F =20A, dI/dt=100A/µs Gate Threshold Voltage V DS =V GS I D =250µA Drain-Source Breakdown Voltage On state drain currentI D =250µA, V GS =0V V GS =10V, V DS =5V V DS =40V, V GS =0VV DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.H. The maximum current rating is limited by bond-wires. Rev0: March 2008。
L3G4200D中文数据手册
3/24
图目录
L3G4200D
图目录
图1. 图2. 图3. 图4. 图5. 图6. 图7. 图8. 图9. 图10. 图11. 图12. 图13. 框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 引脚连接. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .５ L3G4200D外部低通滤波器值 ＳＰＩ 从属 时序图(2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 I2C 从属时序图(3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 读取和写入协议. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 SPI阅读协议. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 读取多个字节SPI协议(2字节的例子）. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SPI写协议. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 多个字节SPI字节写入协议(2例子）. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ． 20 SPI阅读3-wires模式协议. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 LGA-16:机械数据和包装尺寸. . . . . . . . . . . . . . . . . . . . . . . . . . . . ． ． ． ． ． ． 22
L3G4200D芯片中文资料
陀螺仪芯片意法半导体（ST）近日推出一款业界独创、采用一个感应结构检测3 条正交轴向运动的3 轴数字陀螺仪L 3 G 4 2 0 0 D 。
这种创新的设计概念大幅提升运动控制式消费电子应用的控制精度和可靠性，为设备的用户界面实现前所未有的现场感。
现有的3轴陀螺仪解决方案依赖两个或3个独立的感应结构，顶多是在同一硅基片上；而意法半导体的陀螺仪则是3轴共用一个感应结构，这一突破性概念可以消除轴与轴之间的信号干扰，避免输出信号受到干扰信号的影响。
此外，这个创新的产品架构使意法半导体的工程师将传感器与ASIC接口整合在一个4mmx4mmx1mm的超小封装内，解决现在和未来的消费电子应用的空间限制问题。
意法半导体的3轴数字陀螺仪让用户可以设定全部量程，量程范围从±250 dps ～±2000 dps，低量程数值用于高精度慢速运动测量，而高量程则用于测量超快速的手势和运动。
这款器件提供一个16位数据输出，以及可配置的低通和高通滤波器等嵌入式数字功能。
就算时间推移或温度变化，这款器件仍然保持连续稳定的输出。
内置数字输出的L3G4200D 3轴MEMS陀螺仪的设计和制造采用意法半导体销售量超过6亿支的运动传感器的制程技术。
新产品定于2010年第二季度末开始量产。
L3G4200D特性（ST）100元2010●三种可选全尺度(±250/500/2000存保计划）●I2C/SPI数字输出接口●16比特率值的数据输出●8比特温度数据输出●两个数字输出线（中断和data ready）●集成低和高通滤波器的用户可选带宽●在时间和温度上平稳●嵌入式self-test●宽电源电压，2.4 V到3.6 V●低电压兼容的IOS，1.8 V●嵌入式power-down和睡眠模式●嵌入式温度传感器●嵌入式FIFO缓存●高抗撞击能力●扩展的工作温度范围(-40 °C到+85 °C)●ECOPACK® RoHS 和“Green”认证一、寄存器1.控制寄存器CTRL_REG1（地址：20H）：选择输出数据速率，带宽，X、Y、Z轴使能DR1-DR0 输出速率选择，BW1-BW0带宽选择见表CTRL_REG2（地址：21H）：选择高通滤波模式和高通截止频率CTRL_REG3（地址：22H）：中断使能CTRL_REG3CTRL_REG4（地址：23H）：选择量程CTRL_REG5（地址：24H）：FIFO使能，高通滤波使能STATUS_REG（地址：27H）：状态寄存器，ZYXDA=1时，数据已准备好，可读。
BYM12-150中文资料
BYM12-50 THRU BYM12-400EGL41A THRU EGL41GSURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIERReverse Voltage -50 to 400 Volts Forward Current -1.0 AmpereFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ Capable of meeting environmental standards of MIL-S-19500♦ For surface mount applications♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦Fast switching for high efficiency♦ High temperature soldering guaranteed:450°C/5 seconds at plete device submersible temperature of 260°C for 10 seconds in solder bathMECHANICAL DATACase:JEDEC DO-213AB molded plastic over glass bodyRatings at 25°C ambient temperature unless otherwise specified.BYM12BYM12BYM12BYM12BYM12BYM12SYMBOLS -50-100-150-200-300-400UNITSFast efficient device:1st band is green EGL41AEGL41BEGL41CEGL41DEGL41FEGL41GPolarity color bands (2cnd band)GRAY RED PINK ORANGE BROWN YELLOWMaximum repetitive peak reverse voltage V RRM 50100150200300400 Volts Maximum RMS voltage V RMS 3570105140210280Volts Maximum DC blocking voltageV DC 50100150200300400Volts Maximum average forward rectified current at T T =75°C I (AV) 1.0Amp Peak forward surge current 8.3ms single halfsine-wave superimposed on rated load (JEDEC Method)I FSM 30.0Amps Maximum instantaneous forward voltage at 1.0A V F1.0 1.25Volts Maximum DC reverse current T A =25°C 5.0at rated DC blocking voltageT A =125°C I R50.0µA Maximum reverse recovery time (NOTE 1)t rr 50.0nsTypical junction capacitance (NOTE 2)C J 20.014.0pF Maximum thermal resistance (NOTE 3)R ΘJA60.0(NOTE 4)R ΘJT 30.0°C/W Operating junction and storage temperature rangeT J , T STG-65 to +175°CNOTES:(1) Reverse recovery test conditions: I F =0.5A, I R =1.0A, I rr =0.25A (2) Measured at 1.0 MH Z and applied reverse voltage of 4.0 Volts(3) Thermal resistance from junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm)copper pads to each terminal (4) Thermal resistance from junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal1st band denotes type and positive end (cathode)DO-213ABDimensions in inches and (millimeters)Glass-plastic encapsulation is covered byP A T D *。
BTS 4141D中文资料
Page 4
2004-01-27
元ical Characteristics Parameter at Tj = -40...125 °C, Vbb = 15...30 V unless otherwise specified Operating Parameters Operating voltage Undervoltage shutdown Undervoltage restart Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Standby current Tj = -40...85 °C, V IN ≤ 1,2 V Tj = 125 °C1) Operating current Leakage output current (included in Ibb(off)) VIN ≤ 1,2 V Protection Functions2) Initial peak short circuit current limit Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 125 °C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), I bb = 4 mA Overvoltage protection 3) Ibb = 4 mA Thermal overload trip temperature 4) Thermal hysteresis Tjt ∆Tjt 135 10 °C K VON(CL) Vbb(AZ) 47 47 52 V IL(SCr) IL(SCp) 0.7 1.4 1.1 2.1 A IGND IL(off) Ibb(off) 10 1 3.5 25 50 1.6 10 mA µA µA Vbb(on) Vbb(under) Vbb(u rst) ∆Vbb(under) 12 7 0.5 45 10.5 11 V Symbol min. Values typ. max. Unit
便携式彩色多普勒超声技术参数
便携式彩色多普勒超声技术参数1、货物名称便携式全数字化彩色多谱勒超声诊断系统（数量：一套）2、产品用途说明2.1适合腹部、妇科、产科、心脏、浅表组织与小器官、神经、外周血管、颅脑,泌尿系统、儿科、矫形外科、经直肠、超声引导下介入性治疗等全身超声应用。
2.2要求具有用户现场升级能力，可满足将来临床应用扩展需求3、货物数量：壹套4、主要规格及系统概述：4.1主机彩色多谱勒超声波诊断仪包括：4.1.115寸高清晰、医用专业彩色液晶显示器4.1.2★主机一体式探头接口≥2个，（整机探头接口，不接受外接扩展探头）4.1.3★机器内标配锂电池，支持待机≥60分钟4.1.4二维灰阶成像部件4.1.5频谱多谱勒显示及分析系统4.1.6彩色多谱勒超声波诊断部件（包括彩色、能量）4.1.7★彩色和二维Steer 角度独立偏转技术（提供图片证明）4.1.8组织谐波成像4.1.9★扩展成像技术，要求支持全部类型探头4.1.10具有空间复合成像技术4.1.11斑点噪声抑制技术，要求多级可调4.1.12具备频率复合成像4.1.13二维和彩色多谱勒双幅实时显示模式，二维\彩色多普勒\频谱多普勒三同步显示模式4.1.14★具有组织特征成像，能够独立选择肌肉、常规、脂肪、液性成像模式4.1.15多倍波束合成4.1.16B图像支持横向标尺，有利于穿刺操作4.1.17图像局部放大功能(能实现实时和冻结后放大，放大倍率≥8倍)4.1.18★可选配智能实时宽景成像（要求支持所有探头，具有实时宽景成像速度提示、有多种伪彩显示，最大扫描区域≥90CM）4.1.19图像自动优化（包括应用于二维、彩色及频谱模式）4.1.20智能一键放大功能，包括全屏及局部放大，最大超声扫查图像显示区域≥15寸4.1.21内置电池连续正常工作时间≥1.5小时4.1.22★支持3D/4D模块4.1.23★可选配造影功能4.1.24★可选配弹性成像功能5、测量和分析:(B型,M型,频谱多谱勒,彩色多谱勒)5.1一般测量（距离测量、椭圆及描迹测量面积周长、体积测量）5.2妇产科测量，妇科/产科专用测量及分析，含双胎测量、胎儿生理评分、中国人群产科公式5.4心脏功能测量5.4外周血管血流测量分析报告功能5.5★可选配血管内中膜自动测量，可进行血管前、后壁的内中膜一段距离的自动描记、自动生成测量数据结果，结果中至少包括最大值，最小值，平均值，质量指标。
41系列梅索尼兰调节阀中文说明书
注意：在进行填料函维修之前，必须将阀门从管线中隔离出来，并将压力排空。 A. 松开并取下填料法兰螺母（3）。 B. 沿阀杆向上提起填料法兰（4）和填料压紧环（23）。 注：在进行下一步之前，提起了的填料法兰和填料压紧环可用胶带粘住以便它们不致掉落下 来。 C. 使用填料钩除去填料（6）。 注：只有在填料分隔环上面部分的旧填料可以用从阀盖上部拉出的方法卸除。 D. 更换填料（6）。请参照图 2 将规定数量的填料放置在填料分隔环（5）上面。 注：相邻的两填料中的斜切口必须成 180°放置。 E. 重新装上填料压紧环（23）和填料法兰（4）。 F. 重新装上填料函螺拴上的螺母（3），并均匀地拧紧。 注意：螺母不能拧得过紧 G. 将阀门再投入使用，并且只需把填料拧紧到防止漏的程度。 注：在紧急情况下，串式填料仅可作为临时性的修理而使用，随后，应尽快地用正确的填料 来取代串式填料。 7.2 埴料函—任选件润滑型（图 7）
7.1 密封函（标准型）… … … … … … … … … … … … … … … … … … … … … … … … … … … 5 7.2 密封函（任选件润滑型）… … … … … … … … … … … … … … … … … … … … … … … … 5 7.3 阀芯杆的销钉连接… … … … … … … … … … … … … … … … … … … … … … … … … … … 5 7.4 阀芯与阀座环… … … … … … … … … … … … … … … … … … … … … … … … … … … … … 5 7.5 阀芯套组装件… … … … … … … … … … … … … … … … … … … … … … … … … … … … … 5 8. 阀体重新装配… … … … … … … … … … … … … … … … … … … … … … … … … … … … … … 5,6 所有的图… … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … … 6-10
墨尔本电子仪器公司提供的温度、湿度和大气压力数据记录器系列DLi简介说明书
Data Loggers, indicating
series DLi
LCD Data Logger
Front Keypad, Wall Mountable, Remote Readings
1-29/64 [36.83]
4-3/4 [120.65]
2-3/4 [69.85]
range °c -210 to 760 -260 to 1370 -260 to 400 -260 to 980 -50 to 1760 -50 to 1760 60 to 1820 -260 to 1300
Model input Type
Price
DLi-r RTD Temperature
$499.00n
416
DWYER INSTRUMENTS, INC. |
n Items are net priced and are not subject to any discount.
sPeciFicATioNs rTD sensor: Range: -328 to 1562°F (-200 to 850°C); Probe accuracy: ±0.09°F (±0.05°C) for -328 to 500°F (-200 to 260°C), ±0.5°F (±0.3°C) for 500 to 1562°F (260 to 850°C); Resolution: 0.01°F (0.01°C). Thermocouple sensor: Internal range: -4 to 140°F (-20 to 60°C); Accuracy: ±0.9°F (±0.5°C) internally and for types J, K, T, E, and N, ±3°F (±2°C) for types R, S, and B; Resolution: 0.2°F (0.1°C) internally and for types J, K, T, E, and N, 0.9°F (0.5°C) for types R, S, and B. Temperature/Humidity sensor: Range: -4 to 140°F (-20 to 60°C), 0 to 95% RH; Accuracy: ±0.9°F (±0.5°C) for 32 to 122°F (0 to 50°C), 3% RH; Resolution: 0.2°F (0.1°C), 0.1% RH. Temperature/Humidity/Pressure sensor: Range: -40 to 302°F (-20 to 60°C), 0 to 95% RH, 0 to 30 psia; Accuracy: ±0.9°F (±0.5°C), ±3% RH, ±1.0% FSR @ 77°F (25°C); Resolution: 0.1°F (0.05°C), 0.1% RH, 0.002 psia. Memory size: 174,762 readings (DLI-R), 131,071 readings per channel (DLI-T, DLI-H) and 87,381 readings per channel (DLI-P). sampling Method: Stop on memory full or continuous recording. sampling rate: Selectable from 2 s to 24 hrs. computer requirements: Windows® 95, Windows® 98, Windows® 2000, Windows® ME, Windows NT®, and Windows® XP operating system, one free USB port. Power requirements: 9 V lithium ion battery, installed functional, user replaceable. Battery Life: 1 yr with display off, 30 days with continuous display usage (approx). interface: USB port (interface cable required). Housing: Black anodized aluminum case. Weight: 16 oz (440 g). Agency Approvals: CE, model DLI-R not CE approved.
LU1014D中文资料
LU1014D中⽂资料PWRLITE LU1014DHigh Performance N-Channel P OWERJFET TM with PN DiodeFeaturesSuperior gate charge x Rdson product (FOM)Trench Power JFET with low threshold voltage Vth.Device fully “ON” with Vgs = 0.7VOptimum for “Low Side” Buck ConvertersExcellent for high frequency dc/dc convertersOptimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching ApplicationsDC-DC ConvertersSynchronous RectifiersPC Motherboard ConvertersStep-down power suppliesVRM ModulesIPAK Lead-free Pin Assignments DescriptionThe Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required.This product has tin plated leads.312Case TO251 (IPAK)N –Channel PowerJFET with PN DiodeSDGPin DefinitionsPin Number Pin Name Pin Function Description Product Summary1 GateGate. Transistor Gate V DS (V)Rdson (?)I D (A)2, 4 Drain Drain. Transistor Drain 24V 0.0065 5013 SourceSource. Transistor SourceAbsolute Maximum RatingsParameter SymbolRatingsUnits Drain-Source Voltage V DS 24 VGate-Source Voltage V GS -12 VGate-Drain Voltage V GD -28 VContinuous Drain Current I D501 APulsed Drain Current I D100 ASingle Pulse Drain-to-Source Avalanche Energy at 25°C(V DD= 6V DC, IL=60A PK, L=0.3mH, R G=100 ?)E AS 200 mJJunction Temperature T J-55 to 150°C °CStorage Temperature T STG-65 to 150°C °CLead Soldering Temperature, 10 seconds T 260°C °CPower Dissipation (Derated at 25°C) P D 69 W元器件交易⽹/doc/f73727442.htmlThermal ResistanceSymbol Parameter DPAK RatingsUnitsR ΘJA Thermal Resistance Junction-to-Ambient 90 °C/W R ΘJC Thermal Resistance Junction-to-Case1.8 °C/WElectrical Specifications(T A = +25°C, unless otherwise noted.)The φ denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Typ. Max. UnitsStaticBV DSX Breakdown Voltage Drain to Source I D = 0.5 mA V GS = -4 V 24 28 VBV GDO Breakdown Voltage Gate to DrainI G = -50µA-32 -28 V BV GSO Breakdown Voltage Gate to SourceI G = -50µA-14 -12 V R DS(ON ) Drain to Source On Resistance 2I G = 40 mA, I D =10A I G = 10 mA, I D =10A I G = 5 mA, I D =10A 4.6 4.8 4.9 6.5 7.0 m ?m ?V GS(TH) Gate Threshold Voltage V DS =0.1 V, I D =250µA-1 V TCV GSTH Temperature Coefficient of Gate Threshold VoltageV DS =0.1 V, I D =250µA-2.6 mV/o C Dynamic Q Gsync Total Gate Charge Sync JFET ?V Drive =5V,V DS =0.1V (Fig. 2) 9.8 nC Q G Total Gate Charge ?V Drive =5V, I D =10A,V DS =15V 12.4 nC Q GD Gate to Drain Charge V DS =13.5V to V DS =1.5V 8.1 nC Q GS Gate to Source Charge V GS =-4.5V to V DS =13.5V 4.3 nC Q SW Switching Charge V GS =-2V to V DS =1.5V 9.1 nC R G Gate Resistance 0.7T D(ON ) Turn-on Delay Time 5.5 T R Rise Time 12.6 T D(OFF) Turn-off Delay 10.3 T F Fall Time V DD =15V, I D =10A V Drive = 5 V Resistive Load 6.6ns C ISS Input Capacitance 1147 C OSS Output Capacitance 467 C GS Gate-Source Capacitance 784 C GD Gate-Drain Capacitance 363 C DS Drain-Source CapacitanceV DS =10V, V GS = -5 V, 1MHz. (see Fig. 4) 104pF PN DiodeI R Reverse Leakage V R =20V, Vgs = -4V 0.3 mA V F Forward Voltage I F = 1 A 812 mV V F Forward Voltage I F = 10 A 932 mV V F Forward Voltage I F = 20 A 1010 mV Qrr Reverse Recovery Charge I s = 10 A di/dt = 100A/us, 7 nC Trr Reverse Recovery Time I s = 10 A di/dt = 100A/us, 13.3 ns Notes:1. Current is limited by bondwire; with an Rthjc = 1.8 o C/W the chip is able to carry 80A.2. Pulse width <= 500µs, duty cycle < = 2%Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA2Typical Operating Characteristics(T A = +25°C, unless otherwise noted.))h m sS (m O R D23456781.0E-051.0E-04 1.0E-03 1.0E-02 1.0E-01IG(A)Figure 1 – R DSON vs Gate Current at I D – 10AFigure 2 – Gate Charge Qg sync for V DS =0.1VFigure 5 – I G vs Gate Voltage V GSFigure 6 – Transfer CharacteristicLovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USATel. 1 408 654 1980 Fax 1 408 654 1988 /doc/f73727442.htmlTypical Operating Characteristics(T A = +25°C, unless otherwise noted.)Figure 7 – R DSON =f(T); I D = -10A; I G = 40mA Figure 8 – I D vs V DS CharacteristicsFigure 9 – PN Diode Voltage vs Current Figure 10 – Safe Operating AreaFigure 11 – Total Power Dissipation Figure 12 – Normalized Thermal Response 4Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USATel. 1 408 654 1980 Fax 1 408 654 1988 /doc/f73727442.htmlOrdering InformationProduct Number PN Marking Package Notes: LU1014D LU1014D TO251 (IPAK) This product is Pb-Free and has Tin Plated leadsPackage and Marking InformationDIMENSIONSmm.inchDIM. TYP. MIN. MAX.TYP. MIN. MAX.A 2.19 2.40 0.086 0.094 A1 0.891.14 0.035 0.045b 0.76 1.14 0.030 0.045b1 0.64 0.90 0.025 0.035 B2 5.20 5.46 0.205 0.215C 0.45 0.60 0.017 0.023 C2 0.45 0.60 0.017 0.023D 5.97 6.22 0.235 0.244 D1 5.64 0.222E 6.35 6.73 0.250 0.265 e 2.28 0.090 H 13.19 13.06 13.32 0.514 0.525 L 5.95 7.6 0.234 0.300 L1 2.03 2.29 0.079 0.090 L30.630.025 0.045Back ViewLife Support PolicyLOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support orsustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user.2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected tocause the failure of the life support device or system, or to affect its safety or effectiveness.Datasheet Identification Product Status Definition Advance Information In definition or in Design This datasheet contains the design specifications for product development.Specifications may change without notice.Preliminary Initial Production This datasheet contains preliminary data; additional and application data will bepublished at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design.No Identification Needed In Production This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design.Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USATel. 1 408 654 1980 Fax 1 408 654 1988 /doc/f73727442.html5。
Omega DP41系列数字面板表计控制器产品介绍说明书
T he Omega TM DP41 Series of digital panel meter/controllers has set the world standard for accuracy and quality in industrial instrumentation. These meters can measure a broad spectrum of DC voltage and current ranges as well as inputs from 9 thermocouple types and from most RTDs, pressure transducers, load cells, strain gages, andpotentiometers. Models include the DP41-W, a legal-for-trade, NTEP-certified strain meter with enhanced features, and the DP41-U, which covers all the input types.Standard features include 6-digit display; 5 front-panel pushbutton keys; 4 open-collector outputs; and alarm/control, BCD, and analog outputs. Configurable analog output ranges are 0 to 20 mA, 4 to 20 mA, 0 to 5 Vdc, and 0 to 10 Vdc.On-board excitation allows these meters to power virtually any sensor or transmitter, and 4 setpoints give the user numerous control/alarm possibilities. Setpoint configurations include active above or below; latching or non-latching; and high deviation, low deviation, or band deviation.With the RS232/485 serialcommunications option, the user can set the display parameters and read the current, max, and min values remotely. The DP40-R board option provides dual 7 A mechanical relays, activated by the selected setpoint.1⁄8 DIN HIGH-PERFORMANCE METERS ALARM/CONTROL CAPABILITIESSTRAIN GAGE, PROCESS VOLTAGE AND CURRENT, TEMPERATUREDP41 SeriesAll Units Feature:U 5-Year Warranty U 6-Digit Display U Min/Max Storage U 4 Isolated Open-Collector OutputsU NEMA 4 (IP65) Front Panel U 12 Readings per Second U Alarm/Control Capabilities U S mart Filtering Detects the Difference Between a Spike or Process Change(Patent Applied for)U Peak and Valley Detection UDigital Tare U E asy Front-Panel ProgrammingU Optional BCD Output U Optional Analog Output U O ptional RS232/RS485 Communications U O ptional Mechanical Relays Thermocouple Input:U 0.01° Resolution U 0.2°C AccuracyU 9 Thermocouple Types U °C/°F/K Units U U ses Complete NIST Calibration Tables RTD Input:U 0.01° Resolution U 0.2°C Accuracy U 2-, 3-, or 4-WireU 385 and 392 Pt CurvesVoltage/Current Inputs:U ±0.005% Rdg Accuracy U 10 User-Selectable Voltage or 4 to 20/0 to 20 mA Input Ranges U F ully Scalable Display Up to 500,000 Counts U 1.5 to 11 Vdc or 24 Vdc Sensor ExcitationU Adjustable Decimal PointDP41-S strain meter shown actual size.HIGH-PERFORMANCE METERSThe DP41 thermocouple meter offers very high accuracy ensured by an advanced (patent applied for) thermocouple linearizing s ystem. Accuracy for most thermocouple types is 0.2°C (3.6ºF). The meter is front-panelprogrammable for any of 9 thermocouple types. The DP41 RTD input meter is programmable for any 6 to 6000 Ω DIN or NIST platinum RTD. It provides a precision ultra-low constant current excitation to minimize self-heating errors and maximize stability.DP41-T and DP41-RTD shown smaller than actual size.A complete selection ofthermocouple and RTD probes areavailable from Omega TMOffset Adjustment: 0 to 999,999 or 0 to -99,999, programmable Thermocouple Input Types: J, K, T, E, R, S, B, N, J DINRTD Input: Any 6 Ω to 6 k Ω NIST or DIN platinum and any linear RTD RTD Connection: 2-, 3- or 4-wireSensor Break Protection: Up-scale or down-scale, programmableSensor Excitation: 10 V at 30 mA; 24V at 25 mASPECIFICATIONSAccuracy: ±0.005% rdgSpan Temperature Coefficient: ±20 ppm Step Response: 1 s to 99.9%Warm-Up to Rated Accuracy: 50 minutes Operating Environment: 0 to 50°C (32 to 122°F); 95% RH, non-condensing Storage Temperature: -40 to 85°C (-40 to 185°F)Power: 115 or 230 Vac, 49 to 400 Hz; 10 to 32 VdcPower Consumption: 6 W nom., 10 W max Normal-Mode Rejection: 60 dB Common-Mode Rejection: 120 dB Common-Mode Voltage: 1500 Vp per HV test Resolution: 15-bitConversion: Dual-slope technique Reading Rate: 3/s or 13/s, 60 Hz; 3/s or 12/s, 50 HzDisplay: Red or green 6-digit, 14-segment, 13.7 mm (0.54") high; 4 alarm indicators Dimensions: 48 H x 96 W x 165 mm D (1.89 x 3.78 x 6.5")Panel Cutout: 45 H x 92 mm W (1.772 x 3.622"); 1⁄8 DIN Weight: 574 g (1.27 lb)Setpoint Outputs: 4 isolated open collector; rated 150 mA at 1V sink, 30V openBCD Output: Isolated, tri-state, TTL/CMOS compatible; external 5V supply required for isolated; internal 5V supply for non-isolatedDual Relays: Form “C”, 7 A @ 30 Vdc or 230 Vac4-Relay Option: Dual 7 A relays and dual 1 A relaysAnalog Output: 0 to 5V/1 to 5V/0 to 10V/0 to 20 mA/4 to 20 mA, user selectable; 354 Vp isolation; 15-bit resolution; 0.1% accuracy; 50 ms step responseRS232 Communications: 300/600/1200/2400/4800/9600/19.2K baud; RJ11 4-wire connection; programmable to transmit current display, alarm status, min/max, actual measured input value and status RS485 Communications: 300/600/1200/2400/4800/9600/19.2K baud; RJ12 6-wire connection; addressable from 0 to 199Voltage Input Ranges: 0 to 100 mV, 0 to 1V, 0 to 5V, 1 to 5V, 0 to 10V,0 to 100V, ±50 mV, ±500 mV, ±5V, ±50V Current Input Ranges: 0 to 20 mA, 4 to 20 mAInput Configuration: Single-endedPolarity: Unipolar/bipolar, programmable Span Adjustment: 0.00001 to 500,000, programmableused per unit. DC power option not available on models with DP40-R or DP40-R4.Ordering Example: DP41-TC-DC-S2A and DP40-9SC2, DP41 unit for thermocouple inputs, with 10 to 32 Vdc power,RS232 communications, analog output and 9-pin serial connector.termination. For proper termination to a computer, 9-pin and 25-pinconnectors are offered below.DP41Z-E split meter withremote display, panel mount or surface mount with bracket shownsmaller than actual size.DP41-TC with thermocouple probe, soldHIGH-PERFORMANCE METERSDP41-TBS bench stand, sold separately.DP41Z-E shownsmaller than actual size.1⁄8 DIN HIGH-PERFORMANCE PROCESS INDICATORSDP41 SERIES。
OMEGA 4200A 系列 RTD 数字控制器说明书
P-64RTD Digital ControllersThe OMEGA ®4200A Series is anideal controller for RTD applications. This quality-built linearized instrument is available in both 1.0° and 0.1° resolution models. Higher accuracies, accuracies 5 to 10 times greater than the typical 1% meter indicating controller, are achieved through a unique linearizing technique.PR-10-2-100-1/4-12-E general-purpose RTD probe sold separately. 2nd Setpoint: Relay (On/Off Only): SPDT, rated 3 A at 120 Vac Adjustments Proportional Band (Gain): 0 to 3% of span, or on/off; selectable Manual Reset (Offset): Adjustable Cycle Time: Automatically adjusts with load requirement to give least wear with minimum ripple (10 s minimum)Display and Indications Temperature: Filtered LED, 3 or 31⁄2 digits, 2 readings per second update; readability is 1.0° or 0.1° (°F or °C), depending on model Setpoint: By spring loaded switch, first or second setpoint is displayed in place of temperature; setpoint adjusted by 25 turn potentiometer; 1.0° or 0.1° setability Outputs: LED indication for both first and second setpoints; LED are “on” when output drive signal present; “on/off” indication on relay and triac model; proportional intensity for option “F”Temperature Overrange: Red LED indication Setpoint Resolution: 1.0° or 0.1° (°F or °C), depending on model Repeatability: ±0.1% to ±0.2% of span Adjustment: By 25 turn potentiometer; see “setpoint” under “display and indication” section.Power: 120/240 Vac (10%, -15%, 50/60 Hz); power consumption less than 5 W Environmental and Physical Operating Temperature: -1 to 54°C (30 to 130°F)Weight: 1 kg (2 lb)1⁄4 DIN Case: Metal; plug-in with screw terminal on rear; adjustable brackets for panel mounting; panel cutout is 92 x 92 mm (3.622 x 3.622")Specifications*RTD Input Type: 100 Ω platinum;alpha = 0.00385 (DIN curve)Configuration: 3 wiresExternal Lead Wire Resistance Effect: 0.1% span up to 10 Ω per lead wire legSensor Break Protection: Built-in, upscale on open sensorCalibration Accuracy: 1.0° Resolution Model:±0.1% of span ±1 digit0.1° Resolution Model:±0.2% of span ±1 digit Stability: 0.1% for 30 to 130°F,0.1%, 10% to 15% line voltage Common Mode Rejection: Maximumerror ±1°C with 240 V, 60 Hz applied as common mode signal between sensor input and chassis groundSeries Mode Rejection: Maximumerror ±1°C with series mode signal of 100 mV peak-to-peak @ 60 HzControl Output 1st Setpoint(Adjustable Time Proportional): Relay (Standard Model):SPDT relay 7 A resistive @ 120 Vac, 5 Aresistive at 240 VacOption “T” (Triac):Solid stateplug-in triac rated 1 A holding and 10 A in-rushOption “F” (Current Proportional): 4 to 20 mAdc into 1000 Ω maximumOption “DC” (DC Pulse): 20 VdcOrdering Examples: 4202APF1, RTD digital controller.OCW-3, OMEGACARE SMextends standard 2-year warranty to a total of 5 years.U H igh-Accuracyto 0.1% of Span U S ingle and DualSetpoint Models U 1.0° and 0.1° ModelsU A djustable ProportionBand U B right LED DisplayOMEGACARE SM extended warranty program is available for models shown on this page. Ask your sales representative for full details when placing an order. OMEGACARE SM covers parts, labor and equivalent loaners.* Specifications and configurations subject to change as advances in technology allow. 4201APF1.。
MEMORY存储芯片MT41K1G8THE-125 D中文规格书
Table 151: I DD , I PP , and I DDQ Current Limits; Die Rev. E (-40° ื T C ื 85°C) (Continued)Notes: 1.Applicable for MR2 settings A7 = 0 and A6 = 0; manual mode with normal temperaturerange of operation (-40–85°C).2.Applicable for MR2 settings A7 = 1 and A6 = 0; manual mode with extended tempera-ture range of operation (-40–95°C).3.Applicable for MR2 settings A7 = 0 and A6 = 1; manual mode with reduced temperature range of operation (-40–45°C).4.I DD6E , I DD6R , I DD6A values are verified by design and characterization, and may not be subject to production test.5.When additive latency is enabled for I DD0, current changes by approximately +1%.6.When additive latency is enabled for I DD1, current changes by approximately +8%(x4/x8),+7%(x16).7.When additive latency is enabled for I DD2N , current changes by approximately +1%.8.When DLL is disabled for I DD2N , current changes by approximately –6%.9.When CAL is enabled for I DD2N , current changes by approximately –30%.10.When gear-down is enabled for I DD2N , current changes by approximately 0%.11.When CA parity is enabled for I DD2N , current changes by approximately +10%.12.When additive latency is enabled for I DD3N , current changes by approximately +1%.13.When additive latency is enabled for I DD4R , current changes by approximately +4%.14.When read DBI is enabled for I DD4R , current changes by approximately -14%.15.When additive latency is enabled for I DD4W , current changes by approximately +3%(x4/x8), +4%(x16).16.When write DBI is enabled for I DD4W , current changes by approximately 0%.17.When write CRC is enabled for I DD4W , current changes by approximately -5%.18.When CA parity is enabled for I DD4W , current changes by approximately +12%.19.When 2X REF is enabled for I DD5R , current changes by approximately +0%.20.When 4X REF is enabled for I DD5R , current changes by approximately +0%.21.When 2X REF is enabled for I PP5R , current changes by approximately +0%.22.When 4X REF is enabled for I PP5R , current changes by approximately +0%.23.I PP0 test and limit is applicable for I DD0 and I DD1 conditions.24.I PP3N test and limit is applicable for all I DD2x , I DD3x , I DD4x and I DD8 conditions; that is, test-ing I PP3N should satisfy the I PP s for the noted I DD tests.25.DDR4-1600 and DDR4-1866 use the same I DD limits as DDR4-2133.26.The I DD values must be derated (increased) when operating between 85°C < T C ื 95°C:I DD0, I DD1, I DD2N , I DD2NT , I DD2Q , I DD3N , I DD3P , I DD4R , and I DD4W must be derated by +3%; I DD2P must be derated by +10%; and I DD5R and I PP5R must be derated by +43%; All I PP currents except I PP6x and I PP5R must be derated by +0%. These values are verified by design and characterization, and may not be subject to production test.27.I PP6x is applicable to I DD6N , I DD6E , I DD6R and I DD6A conditions.8Gb: x4, x8, x16 DDR4 SDRAM Current Specifications – LimitsFigure 213: DQ Slew Rate DefinitionsNotes: 1.Rising edge slew rate equation srr1 = V diVW,max /(t r1).2.Rising edge slew rate equation srr2 = (V IHL(AC)min - V diVW,max )/(2 × t r2).3.Falling edge slew rate equation srf1 = V diVW,max /(t f1).4.Falling edge slew rate equation srf2 = (V IHL(AC)min - V diVW,max )/(2 × t f2).Table 92: DQ Input Receiver Specifications8Gb: x4, x8, x16 DDR4 SDRAM Electrical Characteristics – AC and DC Single-Ended Input Measurement Levels。
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BYM12-50 THRU BYM12-400EGL41A THRU EGL41G
SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER
Reverse Voltage -50 to 400 Volts Forward Current -1.0 Ampere
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
♦ Capable of meeting environmental standards of MIL-S-19500♦ For surface mount applications
♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦Fast switching for high efficiency
♦ High temperature soldering guaranteed:
450°C/5 seconds at plete device submersible temperature of 260°C for 10 seconds in solder bath
MECHANICAL DATA
Case:JEDEC DO-213AB molded plastic over glass body
Ratings at 25°C ambient temperature unless otherwise specified.
BYM12
BYM12BYM12BYM12BYM12BYM12SYMBOLS -50-100-150-200-300-400UNITS
Fast efficient device:1st band is green EGL41A
EGL41B
EGL41C
EGL41D
EGL41F
EGL41G
Polarity color bands (2cnd band)GRAY RED PINK ORANGE BROWN YELLOW
Maximum repetitive peak reverse voltage V RRM 50100150200300400 Volts Maximum RMS voltage V RMS 3570105140210280Volts Maximum DC blocking voltage
V DC 50
100
150
200300
400
Volts Maximum average forward rectified current at T T =75°C I (AV) 1.0Amp Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)I FSM 30.0
Amps Maximum instantaneous forward voltage at 1.0A V F
1.0 1.25
Volts Maximum DC reverse current T A =25°C 5.0
at rated DC blocking voltage
T A =125°C I R
50.0
µA Maximum reverse recovery time (NOTE 1)t rr 50.0ns
Typical junction capacitance (NOTE 2)C J 20.014.0
pF Maximum thermal resistance (NOTE 3)
R ΘJA
60.0(NOTE 4)
R ΘJT 30.0°C/W Operating junction and storage temperature range
T J , T STG
-65 to +175
°C
NOTES:
(1) Reverse recovery test conditions: I F =0.5A, I R =1.0A, I rr =0.25A (2) Measured at 1.0 MH Z and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm)copper pads to each terminal (4) Thermal resistance from junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal
1st band denotes type and positive end (cathode)
DO-213AB
Dimensions in inches and (millimeters)Glass-plastic encapsulation is covered by
P A T D *。