VNB20N07

VNP20N07FI-VNB20N07-VNV20N07
PROTECTION FEATURES
During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry.
Ilim
20 A 20 A 20 A
s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s DIAGNOSTIC FEEDBACK THROUGH INPUT
VDD = 15 V Vgen = 10 V (see figure 3)
Id = 10 A Rgen = 1000 Ω
VDD = 15 V Vin = 10 V
VDD = ቤተ መጻሕፍቲ ባይዱ2 V
ID = 10 A Rgen = 10 Ω
ID = 10 A Vin = 10 V
Min.
Typ .
90 240 430 150
VNP20N07FI
®
VNB20N07/VNV20N07
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNP20N07FI VNB20N07 VNV20N07
V c la mp
70 V 70 V 70 V
RDS( o n )
0.05 Ω 0.05 Ω 0.05 Ω
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V Vin = 0 VDS = 25 V Vin = 0 VDS = 0 V Vin = 10 V
Min. 60
Typ . 70
55
-1
250
M a x. 80
-0.3 50 200 500
Unit V
V
V
µA µA µA
ON (∗)
Drain-source Voltage (Vin = 0) Input Voltage Drain Current Reverse DC Output Current Electrostatic Discharge (C= 100 pF , R=1.5 KΩ) Total Dissipat ion at Tc = 25 oC Operating Junction T emperature Case Operating T emperature Storage Temperature
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 70V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads.
June 1998
1/13
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VNP20N07FI-VNB20N07-VNV20N07
ABSOLUTE MAXIMUM RATING
Symbol
P ar ame t er
VDS V in ID IR Vesd Pto t Tj Tc Tst g
Symb ol VIN(th)
RDS( o n )
P a ram et er
Input Threshold Voltage
Static Drain-source On Re s is ta nc e
Test Conditions VDS = Vin ID + Iin = 1 mA
Vin = 10 V ID = 10 A Vin = 5 V ID = 10 A
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case Rthj-a mb Thermal Resistance Junction-ambient
ISOWATT220 PowerSO-10
Max
3. 75
1.5
Max
62. 5
50
D2PAK
1.5 62.5
Value
Po werS O-10 D2PAK
ISOW AT T22 0
Internally Clamped
18
Internally Limited
-28
2000
83
34
Internally Limited
Internally Limited
-55 to 150
Unit
V V A A V W oC oC oC
Min. 0.8
Typ .
M a x. 3
Unit V
0.05
Ω
0.07
Ω
DYNAMIC
Symb ol gfs (∗)
Coss
P a ram et er
Forward T r ans c on duc ta nc e Output Capacitance
2/13
Test Conditions VDS = 13 V ID = 10 A
Drain-source Clamp Threshold Voltage
Input-Source Reverse Clamp Voltage
Zero Input Voltage Drain Current (Vin = 0)
Supply Current from Input Pin
Test Conditions ID = 200 mA Vin = 0
Vin = 10 V Vin = 5 V
Vin = 10 V Vin = 5 V
VDS = 13 V VDS = 13 V
Tjsh(∗∗) Overtemperature Shutdown
Tjrs(∗∗) Overtemperature Reset
Igf(∗∗) Fault Sink Current
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input pin voltage. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Turn-on Current Slope
Total Input Charge
Test Conditions
VDD = 15 V Vgen = 10 V (see figure 3)
Id = 10 A Rgen = 10 Ω
BLOCK DIAGRAM (∗)
ISOWATT220
3 2 1
3 1
D2PAK TO-263
10 1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
(∗∗) Parameters guaranteed by design/characterization
Min. 14 14
150 135
0.95
Typ . 20 20 29 70
50 20
M a x.
28 28
60 140
Unit A A µs µs oC
oC mA mA
J
3/13
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oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF