2SD1992AR资料

This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD1992A
Silicon NPN epitaxial planar type
For low-frequency power strengthening and drive Complementary to 2SB1321A
Collector current IC (mA)
Collector current IC (mA)
6006006Fra bibliotek0400
400
200
200
0
0
0 40 80 120 160
0 0 4 8 12 16 20
0
2
4
6
8
10
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2SD1992A
PC Ta
800
IC VCE
800 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 3 mA 2 mA 200 1 mA 800
IC I B
VCE = 10 V Ta = 25°C
Collector power dissipation PC (mW)
Transition frequency fT (MHz)
200
10
160
8
80
120
6
60
80
4
40
40
2
20
0 −1
−10
−100
0
0
1 10 100
1
10
100
1000
Emitter current IE (mA)
Collector-base voltage VCB (V)
Base-emitter resistance RBE (kΩ)
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE1 *2 hFE2 VCE(sat) fT Cob Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, IB = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 500 mA IC = 300 mA, IB = 30 mA VCB = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 85 40 90 0.35 200 6 15 0.60 V MHz pF Min 60 50 7 0.1 1 340 Typ Max Unit V V V µA µA
0.1
1
10
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I E
Collector output capacitance C (pF) (Common base, input open circuited) ob
(0.7)
Unit: mm
6.9±0.1 (4.0) 2.5±0.1 (0.8)
(1.0) 3.5±0.1
■ Features
• Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping
Base current IB (mA)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100
VBE(sat) IC
100
hFE IC
300 VCE = 10 V
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
IC / IB = 10
Forward current transfer ratio hFE
250 Ta = 75°C 200 25°C −25°C
10
10
25°C 1 Ta = 75°C −25°C
1 Ta = 75°C 25°C 0.1 −25°C
150
100
0.1
50
0.01 0.01
0.65 max.
(0.85)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 500 1 600 150 −55 to +150 Unit V V V mA A mW °C °C
2
SJC00235BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1992A
ICEO Ta
104 VCE = 10 V
103
ICEO (Ta) ICEO (Ta = 25°C)
102
10
1
0
40
80
120
160
240 VCB = 10 V Ta = 25°C 12
Cob VCB
Collector-emitter voltage V (V) (Resistor between B and E) CER
IE = 0 f = 1 MHz Ta = 25°C
VCER RBE
120 IC = 2 mA Ta = 25°C 100
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 No rank 85 to 340
Product of no-rank classification is not marked.
(0.8)
Publication date: April 2003
SJC00235BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
1 2 3 0.45+0.10 –0.05 2.5±0.5
14.5±0.5
1.05±0.05 2.5±0.5