FDP6030L中文资料

o
30 37 10 100 -100
V mV/oC µA nA nA
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
VDD = 15 V, ID = 52 A VGS = 10 V, RGEN = 24 Ω
7.6 150 29 17
15 210 46 27 46
nS nS nS nS nC nC nC
VDS= 12 V ID = 26 A, VGS = 10 V
34 6 8
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A
0.01
25°C
-25
0
25
50
75
100
125
150
175
0
TJ , JUNCTION TEMPERATURE (°C)
2
4
6
8
10
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
OFF CHARACTERISTICS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25 oC VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25 C VGS = 10 V, ID = 26 A TJ = 125°C VGS = 4.5 V, ID = 21 A ID(on) ID(on) gFS On-State Drain Current On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VGS = 4.5 V, VDS = 10 V VDS = 10 V, ID = 26 A VDS = 15 V, VGS = 0 V, f = 1.0 MHz 60 15 37
0.05
1.8 DRAIN-SOURCE ON-RESISTANCE
I D = 26A
1.6 1.4 1.2 1 0.8 0.6 -50
ID = 26A
R DS(ON) , ON-RESISTANCE (OHM)
R DS(ON) ,NORMALIZED
V GS = 10V
0.04
0.03
0.02
TA = 125°C
∆VGS(th)/∆TJ
RDS(ON)
0.0135 0.023 0.02
Ω
A A S
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 1)
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp.Coefficient Static Drain-Source On-Resistance
1
1.6 -4 0.0095 0.014 0.015
3
V mV/oC
(Note 1)
1230 640 175
pF pF pF
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
T C = 25°C unless otherwise note
FDP6030L 30 ±20 52 156 75 0.5 -65 to 175
FDB6030L
Units V V A
Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation @ TC = 25°C Derate above 25°C
10 VGS , GATE-SOURCE VOLTAGE (V)
4000
I D = 26A
CAPACITANCE (pF)
8
VDS = 6.0V 12V 24V
2000
Ciss
800
6
Coss
4
300
2
f = 1 MHz VGS = 0V
0 10 20 Qg , GATE CHARGE (nC) 30 40
Figure 6 . Body Diode Forward Voltage Variation with Source Current and Temperature.
FDP6030L Rev.C1
元器件交易网
Typical Electrical Characteristics (continued)
W W/°C °C
TJ,TSTG RθJC RθJA
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 62.5 °C/W °C/W
20
3.5 3.0
1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0.5 0 20 40 60 I D , DRAIN CURRENT (A) 80 100
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
100 ID , DRAIN-SOURCE CURRENT (A)
3
80
7.0 6.0
5.0 4.5
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
5.5
2.5
V GS =3.5V 4.0
60
2
4.0
40
4.5
1.5
5.0 5.5 6.0 7.0 10
Features
52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V RDS(ON) = 0.020 Ω @ VGS=4.5 V. Improved replacement for NDP6030L/NDB6030L. Low gate charge (typical 34 nC). Low Crss (typical 175 pF). Fast switching speed.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
60
60
VDS = 10V
I D , DRAIN CURRENT (A) 50 40 30 20 10 0
TA = -55°C
25°C 125°C
I S , REVERSE DRAIN CURRENT (A)
Conditions
Min
Typ
Max
Unit
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS IAR BVDSS Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 21 A 150 21 mJ A
(Note 1)
52 0.91 0.8 1.3 1.2
A V
TJ = 125°C
Note 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
FDP6030L Rev.C1
元器件交易网
Typical Electrical Characteristics
Crss
1 3 10 30
0
100 0.1
0.3
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.