UNR32A3资料

310
Cob VCB
f = 1 MHz Ta = 25°C 10
IO VIN
VO = 5 V Ta = 25°C
Forward current transfer ratio hFE
Output current IO (mA)
0.33+0.05 –0.02 3
0.10+0.05 –0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 80 100 125 −55 to +125 Unit V V mA mW °C °C
10
1
0.1 0.1
1
10
100
Output current IO (mA)
2
SJH00056BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
0
0
40
80
120
0
0
2
4
6
8
10
12
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
IB = 1.0 mA
10
Total power dissipation PT (mW)
100
Collector current IC (mA)
60
80
1
60
85°C 0.1 Ta = −25°C 25°C IC / IB = 10 0.01 0.1 1 10 100
40
0.1 mA 20
20
Ta = 25°C
C
E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL R1 R1 / R 2 fT VCB = 10 V, IE = −2 mA, f = 200 MHz Conditions IC = 10 µA, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 kΩ VCC = 5 V, VB = 3.5 V, RL = 1 kΩ −30% 0.8 47 1.0 150 4.9 0.2 +30% 1.2 80 0.25 Min 50 50 0.1 0.5 0.1 Typ Max Unit V V µA µA mA V V V kΩ MHz
5°
0.15 min.
0.23+0.05 –0.02
1
2
0 to 0.01
0.52±0.03
5°
1: Base 2: Emitter 3: Collector SSSMini3-F1 Package
Marking Symbol: FN Internal Connection
R1 (47 kΩ) B R2 (47 kΩ)
SJH00056BED
1
UNR32A3
PT Ta
120
80 0.9 mA 0.8 mA
IC VCE
0.7 mA 0.6 mA 0.5 mA 0.4 mA 0.3 mA 0.2 mA 40
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1 0 10 20 30 40
1
100
0.1
0
1
10
100
0.01
0
1
2
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
100 VO = 0.2 V Ta = 25°C
Input voltage VIN (V)
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
Transistors with built-in Resistor
UNR32A3
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits ■ Features
• Suitable for high-density mounting and downsizing of the equipment • Contribute to low power consumption
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
0.15 min.
0.80±0.05
1.20±0.05
Publication date: October 2003