BCX70JLT1中文资料

1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 200 300 500 700 1k
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
IC, COLLECTOR CURRENT (µA)
Figure 7. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
元器件交易网 BCX70GLT1 BCX70JLT1 BCX70KLT1
BANDWIDTH = 1.0 Hz
2.0 dB 3.0 dB 4.0 dB 6.0 dB 10 dB
1.0 dB 2.0 dB 3.0 dB 5.0 dB 8.0 dB 500 700 1k
Figure 5. Narrow Band, 100 Hz
Figure 6. Narrow Band, 1.0 kHz
10 7.0 5.0 10 µA 3.0 2.0 10 20
100 µA
30 µA
0.1 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k
Figure 3. Noise Voltage
Figure 4. Noise Current
NOISE FIGURE CONTOURS
10 < t1 < 500 µs DUTY CYCLE = 2%
*Total shunt capacitance of test jig and connectors
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
元器件交易网
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCX70GLT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc
Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990Ω) ton toff — — 150 800 ns ns
BCX70GLT1 BCX70JLT1 BCX70KLT1
3 1 2
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is defined as: NF

0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) — — VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc — 40 100 120 250 380 60 90 100 — — — 220 460 630 — — — Vdc —
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BCX70GLT1 BCX70JLT1 BCX70KLT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 µA BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA)
EQUIVALENT SWITCHING TIME TEST CIRCUITS
+ 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V <1.0 ns +10.9 V 10 k 0 CS < 4.0 pF* – 9.1 V < 1.0 ns 1N916 CS < 4.0 pF* 275 + 3.0 V t1 +10.18 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C
h FE, DC CURRENT GAIN
200
25°C
– 55°C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100 50 20 10 5.0 2.0 1.0 0.5 0.2 30 µA 10 µA 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k IC = 1.0 mA 300 µA 100 µA BANDWIDTH = 1.0 Hz RS ≈ ∞
1
元器件交易网 BCX70GLT1 BCX70JLT1 BCX70KLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)