IR3312;IR3312S;IR3312STRL;IR3312STRR;中文规格书,Datasheet资料
海湾设备类型代码表
海湾设备类型代码表海湾设备类型代码表是一个用于标识海湾设备类型的编码系统,它可以帮助人们更好地理解和识别不同类型的海湾设备。
海湾设备类型指的是在海湾地区常见的各种设备,例如海洋勘探设备、海洋钻井设备、海洋采矿设备等。
下面是海湾设备类型代码表的相关参考内容。
一、海湾设备类型代码表代码设备类型01 海洋勘探设备02 海洋钻井设备03 海洋采矿设备04 海洋装备维护设备05 渔业设备06 海上运输设备07 海港装卸设备08 海防设备09 海洋科研设备10 水下工程设备11 水上娱乐设备12 水下摄影设备13 水上运动设备14 水上交通标志设备15 水下探测设备16 海洋环境监测设备17 海洋救援设备二、海湾设备类型代码表参考内容1. 海洋勘探设备海洋勘探设备是用于探测、测量和研究海洋环境、地质构造和资源储量的设备。
例如声呐、测波器、重力计等。
通过这些设备可以有效地了解海洋地质构造、沉积物分布等信息,为海洋科研和资源勘探提供重要数据。
2. 海洋钻井设备海洋钻井设备主要用于在沿海或深海进行石油、天然气等资源的勘探和开采。
常见的海洋钻井设备包括钻井船、钻井平台、钻井设备等。
它们可以在海洋中进行钻井作业,开发海洋油气资源。
3. 海洋采矿设备海洋采矿设备是用于在海底进行矿产资源开采的设备。
海洋中蕴藏着丰富的矿产资源,包括锰结核、硫化物等。
海洋采矿设备可以实现对海底矿产资源的开采和采样,为资源开发提供技术支持。
4. 海洋装备维护设备海洋装备维护设备用于对海洋设备进行维修和保养。
例如浮动起重设备、维修船等。
海洋装备维护设备可以对海洋设备进行定期检修和故障处理,保证设备的正常运行。
5. 渔业设备渔业设备是用于捕捞和养殖等渔业活动的设备。
包括渔船、渔网、渔具等。
渔业设备可以帮助渔民进行捕捞作业,满足人们对海产品的需求。
6. 海上运输设备海上运输设备是用于海洋运输的设备。
包括货船、客船、集装箱码头设备等。
海上运输设备可以实现货物和人员在海洋间的长途运输,促进海洋经济的发展。
ScanIRII线扫描仪红外测温仪
Page 1 of 3 Scan IR II线扫描仪红外测温仪基本配置-包括线扫描红外测温仪,电源箱,30米以太网电缆,探头至电源箱的电缆15米技术参数探头 扫描角度: 90°(可调)扫描速率: 10HZ,25,50,100HZ 系统响应时间: 0.010~60秒 精度: 读数的±0.50%或3℃,取大值 重复性:读数的±0.3%或2位数字,取大值 远距离聚焦: 610mm~∞扫描位置的精度: ±0.5 mrad环境温度: 0~55℃ 不带水冷套 相对湿度: 10~90%,无结露 防护等级: NEMK 12K IP52 传感器尺寸: 243 × 233 × 350 mm 传感器重量: 8.4 Kg电源/处理器 电源:100-240Vac 自动切换,50/60HZ;120VA 环境温度: 0~55℃相对湿度: 10~90%,无结露 防护等级:NEMK 12K,IP52电源到传感器的最长电缆:305 m模拟输出: 最多10个通道(绝缘的)(1或2组5通道卡) 电流输出: 4-20 mAdc 或0-20 mAdc,最大负载1000Ω。
继电器输出:1组常开继电器,输出功率24VAC/DC@1Amp传感器/系统报警触点: 传感器环境温度报警 系统报警数字通信:RS-485 重量:12.2 kb操作接口通信:以太网,BNC 连接ScanIR II 系列系统配置图操作接口 S 探头计算机 ScanIR II 电源处理箱以态网/ TCP/IP 连接上位机PLC 装置Page 2 of 3ScanIR II 系列 型号配置A 和B 型号温度范围0C距离系数S212 系列 1µ,25Hz(高温) ❑ 13C30 815 - 1365 D/300 ❑ 17C30980 - 1760D/300S212 系列 1µ,50Hz(中高温) ❑ 08C10 540~870D/100 ❑ 12C20 705~1205 D/200 ❑ 13C20 815~1365 D/200 ❑ 17C20 980~1760 D/200S221 系列 1.5~1.6µ,10Hz(中高温)❑ 04C07 260~480 D/75 ❑ 05C10 315~595D/100S222 系列 1.5~1.6µ,25Hz(中高温) ❑ 12C30 815~1365 D/300S223 系列 1.5~1.6µ,50Hz(中高温)❑ 06C15 350~650 D/100 ❑ 07C15 400~760D/150 ❑ 12C20 600~1200 D/200S231 系列 2.1~2.4µ,10Hz(低温)❑ 03C05 150~370 D/50 ❑ 04C07 175~425D/75型号温度范围0C距离系数S233 系列 2.1~2.4µ,50Hz(中高温)❑ 05C10 250~550 D/100 ❑ 07C15 300~750D/150 ❑ 12C20 425~1200 D/200S241 系列 3.2~3.5µ,10Hz(水泥回转窑)❑ 05C05 150~550D/50S251 系列 4.4~5.1µ,10Hz(玻璃,水泥回转窑)❑ 04C07 35~425 D/75 ❑ 07C10 120~760D/100 ❑ 12C20 260~1200 D/200 ❑ 25C20 1000~2500 D/200S253 系列 4.4~5.1µ,50Hz(玻璃)❑ 04C04 40~440 D/40 ❑ 08C10 200~850D/100 ❑ 12C10 250~1200 D/100S254 系列 4.4~5.1µ,100Hz(玻璃)❑ 08C10 200~870D/100 ❑ 12C10 260~1200D/100ScanIR II 的点模式测量示图Ircon 的ScanIR II 相当于10个点温仪测量物体温度。
二次雷达技术交流
强制报告点时,请机组报告,地面统计单雷 达目的显示; C模式代码测试:校飞飞机在穿越每个高度层 时请机组报告高度,地面统计C模式编码显示 高度;
6、二次雷达飞行校验
A模式代码:测试A模式编码0000、1111、 2222、3333、4444、5555、6666、 7777、7500、7600、7700以及SPI测试;
上行询问
下行回答
上行询问 1030MHz 下行回答 1090MHz
1.3、二次雷达工作原理
二次雷达所需目的参数:距离R、方位ɑ、高度、 H
1.3、二次雷达工作原理
问询信号
三脉冲问询体制
P1-P3 模式问询脉 冲 问询波束主瓣
控制波束 辐射P2
P2 旁瓣克制脉冲
(控制脉冲)
尾瓣
询问波束 辐射P1 P3
1.2、SSR与其他监视方式旳区别
二次雷达(A/C/S模式):独立旳、合 作式监视系统 经过地面问询系统根据问询和机 载设备旳应答计算目旳旳距离和方位 角。同步S模式二次雷达增强了飞机寻 址和双向数据链旳功能。
优点:相对一次雷达旳信息愈加详细 缺陷:无法监视没有安装应答机或应答机 失效旳飞机
1.2、SSR与其他监视方式旳区别
2.1、二次雷达总体构造图
2.2二次雷达航空管制信号流程简图
2.3、二次雷达数据信号流程简图
天线座
天线 控制箱
通道切 换开关
询问机 A通道
本地监控显示器 询问机B通道
空中交通管制中心监控席位 机场塔台调度席位 其他引接数据使用者
2.4、二次雷达系统工作流程图
目标数据输出 机载应答机
工作模式设置 监控界面
中国民航二次雷达代码指定表
0600-0677
0700-0777
1组
1000-1077
1100-1177
2组
2100-2177
2200-2277
2350-2377
2500-2577
3组
3400-3477
4组
4100-4177
5组
5000-5037
武汉高空区域管制室5
武汉情报区内
0300-0347
跨武汉情报区
6240-6257
郑州高空区域管制室40
武汉情报区内
0335-0377
跨武汉情报区
6260-6277
沈阳情报区
情报区内 104
2500-2577、7300-7347
跨情报区 112
6450-6477、1200-1277、7350-7377
广州情报区内
0600-0637、0660-0677、3450-3457
跨广州情报区
3100-3177、4530-4547、2430-2437
海口高空区域管制室 40
广州情报区内0640-0657
跨广州情报区
4500-4527
长沙高空管制室 48
广州情报区
3400-3427
共计191
北京高空区域管制室 119
北京情报区内4100-4137
跨北京情报区3000-3077、0001-0027
呼和浩特高空管制室56
北京情报区内4140-4157
跨北京情报区0030-0047
太原高空区域管制室 40
北京情报区内4160-4177
拉萨高空区域管制室 14
海湾设备类型代码表
海湾设备类型代码表海湾设备类型代码表是一个用于分类和标准化海湾设备的编码系统。
它是根据国际规范和行业标准来制定的,以确保海湾设备能够统一命名和分类,方便管理和使用。
以下是海湾设备类型代码表的相关参考内容。
一、代码表结构海湾设备类型代码表通常由代码和其对应的设备类型名称组成。
代码一般是一个唯一的标识符,用于标记每种设备类型。
设备类型名称是对应的设备类型的具体描述。
二、代码表示例下面是一个海湾设备类型代码表的示例:代码设备类型名称01 风力发电机02 太阳能发电机03 液化天然气储存设备04 油罐储存设备05 化工反应器06 船舶装卸设备07 石油钻井设备08 海底输油管道09 海洋平台10 水下机械设备三、代码表的编制原则海湾设备类型代码表编制的原则一般包括以下几个方面:1.国际标准:代码表应参考国际通用标准,并尽量与其他国际标准保持一致,以便在全球范围内使用和理解。
2.行业规范:代码表应参考相关行业规范和标准,如海洋工程、船舶建造、石油化工等行业的规范,以确保代码表的准确性和实用性。
3.可扩展性:代码表应具有一定的可扩展性,以便将来新增的设备类型能够被纳入代码表中,而不需要大幅度修改现有的代码和分类。
四、代码表的应用海湾设备类型代码表的应用主要用于以下几个方面:1.设备管理:海湾设备类型代码表可以作为设备管理系统的基础,通过代码来标记和检索不同类型的设备,方便对设备进行管理和维护。
2.设备分类:代码表可以将海湾设备进行分类,使得不同类型的设备能够得到准确的识别和分类,方便进行统计和分析。
3.数据交换:海湾设备类型代码表可以作为数据交换的标准,通过数据中的设备类型代码来表示设备的类型,方便不同系统之间的数据交换和共享。
4.行业标准化:海湾设备类型代码表可以作为行业标准的一部分,被广泛应用于海洋工程、石油化工等行业,以确保行业内对设备的命名和分类的一致性和准确性。
五、维护和更新海湾设备类型代码表需要进行定期的维护和更新,以保证其与最新的国际标准和行业规范的一致性。
公共视频监控视频图像设备基础数据集代码表
附录A公共视频监控视频图像设备基础数据集代码表A.1摄像机供电方式代码说明:摄像机供电方式的代码采用顺序码。
表示:nlA.2摄像机结构类型代码说明:摄像机结构类型的代码。
表不:112A.3移动视频图像采集设备类型代码说明:移动视频图像采集设备类型的代码。
表示:nlA.4摄像机补光类型代码说明:摄像机补光类型的代码。
表示:nlA.5摄像机光电成像类型代码说明:摄像机光电成像类型的代码。
表示:nlA.6视频编码格式代码说明:视频编码格式的代码。
表示:n2A.7摄像机支持分辨率代码说明:摄像机支持分辨率的代码。
表示:nlA.8监控点位类型代码说明:监控点位类型的代码。
表示:nlA.9摄像机功能类型代码说明:摄像机功能类型的代码。
表示:nlA.10卡口位置类型代码说明:卡口位置类型的代码。
表示:n2A.11卡口关注目标类型代码说明:卡口关注目标类型的代码。
表示:112A.12视频图像采集水平方向代码说明:视频图像采集水平方向的代码。
表不:nl取值9。
A.13视频图像采集垂直方向代码说明:视频图像采集垂直方向的代码。
表示:nlA.14取电来源代码说明:取电来源的代码。
表示:nlA.15道路类型代码说明:道路类型的代码。
表不:112A.16摄像机共享属性代码说明:摄像机共享属性的代码。
表不:nlA.17默认权限代码说明:默认权限的代码。
表示:nl说明:系统所属层级的代码。
表示:nlA.19设备生命周期阶段代码说明:设备生命周期阶段的代码。
表示:nl。
IR33控制器手册(中文版)_06MC043C@13B010
测量单位 °C/°F °C/°F °C/°F 分钟
变量
范围 1 0.1 0.1 1
1
默认值 N*A 2 33 2 1
默认值 X*F 2 33 2 1
3
3
其它:
参数
描述
C32 串行接口地址
类型 最小值 最大值
C
1
207
测量单位 变量
范围 1
默认值 默认值
N*A X*F
1
1
6 (20 )
版本:1.0-日期:31-08-2012 CN
默认值 X*F 18 32 0 25
报警参数:
参数
描述
类型 最小值 最大值
P25 低温报警
P -50 P26
P26 高温报警
P P25 150
P27 报警精度
P
0
50
P28 报警延迟
P
0
250
数字输入报警:
0=无输入
1=报警且自动复位
C29 2=报警且手动复位 C
0
12
3=延迟报警且手动
复位
4=开/关控制
按下( )或( )键直到显 示所需的值。
按下「Set」键:确认新设定 值。
显示已修改设定值的参数代 码。
按下「Prg/mute」键 5 秒钟, 保存所有新设定的参数值并 返回标准界面。
版本:1.0-日期:31-08-2012 CN
编程/消音键:按下此键 5 秒则进入常用参数设置菜单(Pxx 类型代码)。在报
警状态下,此键为关闭警报音和警报继电器。如和设置键同时按下 5 秒,输入
密码,进入设置 C 类参数(Cxx、Dxx 和 Fxx 等配置参数)的菜单;如和向上
内策尔容栅编码器参数
内策尔(Netzer)容栅编码器是一种用于精确测量旋转轴位置的设备,它通过电容感应原理来实现非接触式的位置检测。
以下是一些关于内策尔容栅编码器的主要参数:
1. 产品型号:内策尔提供多种型号的容栅编码器,如DS25、DS37、DS58、DS70、DS90和DS130等,以满足不同应用场景的需求。
2. 外径尺寸:这些编码器的外径范围从16mm到300mm不等,适用于各种不同的机械尺寸和空间限制。
3. 分辨率:分辨率是指编码器能够区分的最小角度变化,这通常取决于编码器的设计和内部结构。
4. 工作温度:编码器能够在一定的温度范围内正常工作,这个范围定义了其适用的环境条件。
5. 输出接口:编码器可能提供多种输出接口,如模拟信号、数字信号、SSI或SPI等,以便于与不同的控制系统连接。
6. 电源电压:编码器工作时所需的电源电压范围。
7. 最大转速:编码器能够承受的最大旋转速度,超过此速度可能会影响其性能或损坏设备。
8. 防护等级:编码器的防尘防水等级,如IP65或IP67,表示其对环境条件的适应能力。
IRFR场效应管
IRFR-IRHM器件索引∙IRFR3410(Power MOSFET)∙IRFR3411(HEXFET Power MOSFET)∙IRFR3412(SMPS MOSFET)∙IRFR3418(HEXFET Power MOSFET)∙IRFR3504(AUTOMOTIVE MOSFET)∙IRFR3504PbF(AUTOMOTIVE MOSFET)∙IRFR3505(AUTOMOTIVE MOSFET)∙IRFR3518(HEXFET Power MOSFET)∙IRFR3704(Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A ))∙IRFR3704Z(HEXFET Power MOSFET)∙IRFR3706(Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A ))∙IRFR3707(Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A ))∙IRFR3707Z(HEXFET Power MOSFET)∙IRFR3707ZPBF(HEXFET Power MOSFET)∙IRFR3708(Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=61A ))∙IRFR3709Z(HEXFET Power MOSFET)∙IRFR3710Z(Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi)∙IRFR3711(Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A ))∙IRFR3910(Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A))∙IRFR3911(SMPS MOSFET)∙IRFR410(1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs)∙IRFR4104(Power MOSFET(Vdss=40V, Rds(on)=5.5mohm, Id=42A))∙IRFR4105(Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A ))∙IRFR4105Z(Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A))∙IRFR410B(500V N-Channel MOSFET)∙IRFR420(Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A))∙IRFR420(2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs)∙IRFR420A(SMPS MOSFET)∙IRFR420B(500V N-Channel MOSFET)∙IRFR430A(SMPS MOSFET)∙IRFR430B(500V N-Channel MOSFET)∙IRFR48Z(AUTOMOTIVE MOSFET)∙IRFR48ZPBF(AUTOMOTIVE MOSFET)∙IRFR5305(Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A))∙IRFR5410(Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A))∙IRFR5505(Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A))∙IRFR6215(Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A))∙IRFR9010(P-CHANNEL POWER MOSFETS)∙IRFR9014(Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A))∙IRFR9014TRL(HEXFET Power MOSFET)∙IRFR9020(REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS)∙IRFR9024(P-Channel Enhancement Mode Field Effect Transistor)∙IRFR9024(Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A))∙IRFR9024N(Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A))∙IRFR9110(3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs)∙IRFR9110TRL(Power MOSFET(Vdss=-100V, Rds(on)=1.2ohm, Id=-3.1A))∙IRFR9120(Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A))∙IRFR9120(5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs)∙IRFR9120N(Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A))∙IRFR9210(Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A))∙IRFR9214(Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A))∙IRFR9220(3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs)∙IRFR9220(Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A))∙IRFR9310(Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A))∙IRFR9N20D(Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A))∙IRFRC20(Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A))∙IRFS11N50A(SMPS MOSFET)∙IRFS140A(Advanced Power MOSFET)∙IRFS150A(Advanced Power MOSFET)∙IRFS240B(200V N-Channel MOSFET)∙IRFS244B(250V N-Channel MOSFET)∙IRFS250(200V N-Channel MOSFET)∙IRFS254B(250V N-Channel MOSFET)∙IRFS3306PBF(High Efficiency Synchronous Rectification in SMPS)∙IRFS340A(Advanced Power Mosfet)∙IRFS340B(400V N-Channel MOSFET)∙IRFS350A(Advanced Power MOSFET)∙IRFS4227PBF(PDP SWITCH)∙IRFS440A(Advanced Powre MOSFET)∙IRFS440B(500V N-Channel MOSFET)∙IRFS450(500V N-Channel MOSFET)∙IRFS510(Advanced Power MOSFET)∙IRFS520A(Advanced Power MOSFET)∙IRFS530(Advanced Power MOSFET)∙IRFS540(Advanced Power MOSFET)∙IRFS550A(Advanced Power MOSFET)∙IRFS610A(Advenced Power MOSFET (N-CHANNEL))∙IRFS630A(Advanced Power MOSFET)∙IRFS634A(Advanced Power MOSEFT)∙IRFS640(Improved inductive ruggedness)∙IRFS640(200V N-Channel MOSFET)∙IRFS640A(Rugged Gate Oxide Technology)∙IRFS650A(Advanced Power MOSFET)∙IRFS650B(200V N-Channel MOSFET)∙IRFS720(400V N-Channel MOSFET)∙IRFS730A(Advanced Power MOSFET)∙IRFS750(Advanced Power MOSFET)∙IRFS820A(Advanced Power MOSFET)∙IRFS840(500V N-Channel MOSFET)∙IRFS840A(Advanced Power MOSFET)∙IRFS9N60A(SMPS MOSFET)∙IRFSL11N50A(HEXFET Power MOSFET)∙IRFSL9N60A(SMPS MOSFET)∙IRFU1N60A(SMPS MOSFET)∙IRFU3504Z(AUTOMOTIVE MOSFET)∙IRFU9210N(HEXFET Power MOSFET)∙IRFV064(HEXFET TRANSISTOR, N-CHANNEL)∙IRFV260(TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*))∙IRFV360(REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR)∙IRFV460(REPETITIVE AVALANCHE RATED AND dv/dt RATED)∙IRFW510A(Advanced Power MOSFET)∙IRFW710(400V N-Channel MOSFET)∙IRFW720(400V N-Channel MOSFET)∙IRFW730(400V N-Channel MOSFET)∙IRFW740(400V N-Channel MOSFET)∙IRFW840(500V N-Channel MOSFET)∙IRFWI530A(Advanced Power MOSFET)∙IRFY044(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY044C(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY044CM(POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=16A*))∙IRFY120(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY130(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY130CM(POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A))∙IRFY1310M-T257(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY140(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY140C(N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS)∙IRFY140CM(POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A))∙IRFY230(N?CHANNEL POWER MOSFET FOR HI?REL APPLICATIONS)∙IRFY240(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY240CM(POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.18ohm, Id=16A))∙IRFY330(N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package)∙IRFY340(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY340CM(POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A))∙IRFY430(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY430CM(POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A))∙IRFY430M-T257(N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY440CM(POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A))∙IRFY9120(P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package)∙IRFY9130(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9130CM(POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.3ohm, Id=-11.2A))∙IRFY9140(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9140C(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9140CM(POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A))∙IRFY9230(P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS)∙IRFY9240(POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-9.4A))∙IRFZ10(HEXFETR POWER MOSFET)∙IRFZ14(HEXFET Power MOSFET)∙IRFZ20(HEXFET TRANSISTORS)∙IRFZ24L(HEXFET Power MOSFET)∙IRFZ24N(Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A))∙IRFZ24N(N-channel enhancement mode TrenchMOS transistor)∙IRFZ24NL(Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A))∙IRFZ24NLPBF(HEXFET Power MOSFET)∙IRFZ24V(Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A))∙IRFZ34(Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A))∙IRFZ34E(HEXFET POWER MOSFET)∙IRFZ34L(HEXFET Power MOSFET)∙IRFZ34NLPbF(HEXFET Power MOSFET)∙IRFZ34NS(HEXFET㈢ Power MOSFET)∙IRFZ34VL(Advanced Process Technology)∙IRFZ34VLPbF(HEXFET Power MOSFET)∙IRFZ40(N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS)∙IRFZ40(N-CHANNEL POWER MOSFETS)∙IRFZ42(Power Field Effect Transistors)∙IRFZ44(Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A))∙IRFZ44(N-channel enhancement mode TrenchMOS transistor)∙IRFZ44E(Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A))∙IRFZ44EL(Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A))∙IRFZ44L(HEXFET Power MOSFET)∙IRFZ44NL(Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A))∙IRFZ44NPBF(HEXFET-R Power MOSFET)∙IRFZ44NS(N-channel enhancement mode TrenchMOS transistor)∙IRFZ44R(Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A))∙IRFZ44V(Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A))∙IRFZ44VPBF(Ultra Low On-Resistance)∙IRFZ44VS(Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A))∙IRFZ44VZL(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A))∙IRFZ44Z(Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A))∙IRFZ46(Power MOSFET(Vdss=50V, Rds(on)=0.024ohm, Id=50*A))∙IRFZ46N(Power MOSFET(Vdss=55V, Rds(on)=16.5mohm, Id=53A))∙IRFZ46NL(HEXFET POWER MOSFET)∙IRFZ46S(HEXFET Power MOSFET)∙IRFZ46ZS(AUTOMOTIVE MOSFET)∙IRFZ48(Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A))∙IRFZ48(N-channel enhancement mode TrenchMOS transistor)∙IRFZ48L(HEXFET Power MOSFET)∙IRFZ48NL(Advanced Process Technology)∙IRFZ48V(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A))∙IRFZ48VS(Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A))∙IRFZ48Z(AUTOMOTIVE MOSFET)∙IRFZ48ZLPBF(AUTOMOTIVE MOSFET)∙IRG4BC10K(Short Circuit Rated UltraFast IGBT)∙IRG4BC10KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.2.39V, @Vge=15V, Ic=5.0A))∙IRG4BC10S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A))∙IRG4BC10SD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V,Ic=2.0A))∙IRG4BC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4BC15MD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.88V, @Vge=15V, Ic=8.6A))∙IRG4BC15UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A))∙IRG4BC15UD-L(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V,Ic=7.8A))∙IRG4BC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20FD-STRL(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A))∙IRG4BC20K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20KD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V,Ic=9.0A))∙IRG4BC20K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A))∙IRG4BC20MD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A))∙IRG4BC20MD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V,Ic=11A))∙IRG4BC20S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20SD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20SD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A))∙IRG4BC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A))∙IRG4BC20UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A))∙IRG4BC20UD-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V,Ic=6.5A))∙IRG4BC20W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A))∙IRG4BC20WS(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4BC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30KD-STRR(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4BC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4BC30S-S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4BC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4BC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4BC30U-S(INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A))∙IRG4BC30U-SPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BC30W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A))∙IRG4BC30WS(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A))∙IRG4BC30W-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A))∙IRG4BC30W-SPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BC40F(INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4BC40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4BC40S(INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A))∙IRG4BC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A))∙IRG4BC40W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A))∙IRG4BH20K-L(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4BH20K-S(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4CC71KB(IRG4CC71KB IGBT Die in Wafer Form)∙IRG4IBC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20FDPBF(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC20W(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30F(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4IBC30S(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙irg4ibc30w(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4IBC30WPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4MC50F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4MC50U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4P254S(INSULATED GATE BIPOLAR TRANSISOR)∙IRG4PC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4PC30FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A))∙IRG4PC30K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4PC30KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A))∙IRG4PC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A))∙IRG4PC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4PC30UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A))∙IRG4PC30W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A))∙IRG4PC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A))∙IRG4PC40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4PC40KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A))∙IRG4PC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A))∙IRG4PC40UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A))∙IRG4PC50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A))∙IRG4PC50FD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A))∙IRG4PC50K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A))∙IRG4PC50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A))∙IRG4PC50S(INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A))∙IRG4PC50U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A))∙IRG4PC50UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A))∙IRG4PC50W(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A))∙IRG4PC60F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PC60U( INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PF50W(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PF50WD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PF50WPBF(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4PH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A))∙IRG4PH20KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V,Ic=5.0A))∙IRG4PH30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A))∙IRG4PH30(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A))∙IRG4PH40K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A))∙IRG4PH40KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A))∙IRG4PH40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A))∙IRG4PH40UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A))∙IRG4PH40UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2-EP(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH40UD2PBF(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4PH50(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A))∙IRG4PH50K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A))∙IRG4PH50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A))∙IRG4PH50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A))∙IRG4PH50U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A))∙IRG4PSC71K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A))∙IRG4PSC71KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.83V, @Vge=15V, Ic=60A))∙IRG4PSC71U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A))∙IRG4PSC71UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A))∙IRG4PSH71(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A))∙IRG4PSH71(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A))∙IRG4PSH71U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A))∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A))∙IRG4RC10(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A))∙IRG4RC10SD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A))∙IRG4RC10U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4RC10UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A))∙IRG4RC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.82V, @Vge=15V, Ic=12A))∙IRG4ZC70UD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRG4ZH50KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB10B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB14C40L(IGBT with on-chip Gate-Emitter and Gate-Collector clamps)∙IRGB15B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB20B60PD1(SMPS IGBT)∙IRGB30B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGB4055PBF(Advanced Trench IGBT Technology)∙IRGB420(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A))∙IRGB420UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A))∙IRGB430(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A))∙IRGB430UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A))∙IRGB440U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A))∙IRGB5B120KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB6B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGB6B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGB8B60K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGBC20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A))∙IRGBC20FD2(IRGBC20FD2)∙IRGBC20K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A))∙IRGBC20M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20MD2-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGBC20S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A))∙IRGBC20SD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A))∙IRGBC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGBC20UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGBC30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A))∙IRGBC30FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=31A))∙IRGBC30K(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A))∙IRGBC30K-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A))∙IRGBC30M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30MD2-S(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGBC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A))∙IRGBC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A))∙IRGBC30UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A))∙IRGBC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=25A))∙IRGBC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A))∙IRGBC40M-S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A))∙IRGBC40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A))∙IRGBC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A))∙IRGBF20(INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A))∙IRGBF30(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A))∙IRGI4065PBF(PDP TRENCH IGBT)∙IRGIB10B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB15B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB6B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIB7B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGIH50F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGKIN050M12(CHOPPER LOW SIDE SWITCH IGBT INTAPAK)∙IRGMC30F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGMC30U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGMVC50U(INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE)∙IRGP20B120UD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP20B120U-E(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGP20B60PD(WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP30B120KD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP30B60KD-E(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP35B60PD(WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGP4050(PDP Switch)∙IRGP420U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A))∙IRGP430U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A))∙IRGP430UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=15A))∙IRGP440U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A))∙IRGP440UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=500V, @Vge=15V, Ic=22A))∙IRGP450U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=33A))∙IRGP450UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V, Ic=33A))∙IRGP50B60PD1(SMPS IGBT)∙IRGPC20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A))∙IRGPC20M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGPC20MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A))∙IRGPC20U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A))∙IRGPC30F(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPC30FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=17A))∙IRGPC30K(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPC30M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A))∙IRGPC30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=16A))∙IRGPC30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=18A))∙IRGPC30U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A))∙IRGPC30UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A))∙IRGPC40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A))∙IRGPC40FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A))∙IRGPC40M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A))∙IRGPC40MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=24A))∙IRGPC40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A))∙IRGPC40U(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=20A))∙IRGPC40UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=20A))∙IRGPC50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=39A))∙IRGPC50FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V,Ic=39A))∙IRGPC50KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGPC50M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=35A))∙IRGPC50MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=35A))∙IRGPC50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=41A))∙IRGPC50UD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A))∙IRGPF20F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=5.3A))∙IRGPF30F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=11A))∙IRGPF40F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V,@Vge=15V, Ic=17A))∙IRGPF50F(INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A))∙IRGPH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A))∙IRGPH20(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A))∙IRGPH30MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A))∙IRGPH30S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=13A))∙IRGPH40(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A))∙IRGPH40FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A))∙IRGPH40M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A))∙IRGPH40MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A))∙IRGPH40S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A))∙IRGPH50(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A))∙IRGPH50FD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A))∙IRGPH50M(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A))∙IRGPH50MD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23A))∙IRGPH50S(INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A))∙IRGPS40B120U(INSULATED GATE BIPOLAR TRANSISTOR)∙IRGPS60B120KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGR3B60KD2(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGS10B60KD(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRGS4B60KD1(INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE)∙IRH3054(RADIATION HARDENED POWER MOSFET THRU-HOLE)。
DET-TRONICS
为您提供火焰与气体检测的整体方案前言DET-TRONICS 公司的英文全称为Detector Electronics Corporation,总部位于美国明尼苏达州。
结合三十余年的生产经验,DET-TRONICS 在火焰和气体检测等安全领域内继续保持世界范围内的领先地位。
DET-TRONICS 的主要产品覆盖了从火焰检测器、气体检测器到火焰监控及释放系统的整个领域,各项产品分别获得了包括FM、CSA、CENELEC、NFPA-72 等国际认证。
国际领先的技术,可靠的质量,完善的认证使得DET-TRONICS产品在全球范围内的各个领域中获得了广泛的应用。
火焰检测器------多光谱红外火焰检测器------紫外/红外火焰检测器------双光谱红外火焰检测器------单频率红外火焰检测器------紫外火焰检测------烟气检测器------配套的控制器及附件气体检测器------可燃气体检测器-红外点式碳氢气体检测器-红外开放式碳氢气体检测器-催化式可燃气体检测器------有毒气体及氧气检测器-电化学式检测器(H2S,O2,SO2,CO Cl 等)火气监控及释放系统-------Eagle Quantum Premier 可寻址方式火气监控及释放系统-FM 认证满足NFPA-72 要求的集成系统-真正完整的安全系统-采用LON 现场总线技术实现与现场设备的冗余通信-将火焰、气体、烟气、按钮及报警和消防释放系统集成于同一网络-具备可编程逻辑控制-------Eagle Logic Solver 点对点式火气监控及释放系统-完整的集成化的先进的火气系统-综合的现场总线技术,支持HART-开放的Modbus 总线界面(串行通讯和以太网)-多项冗余-智能的人机界面为您提供火焰与气体检测的整体方案火焰检测器(Flame Detector)------多光谱红外火焰检测器(Multispectrum IR)X3301 多光谱红外火焰检测器是一种最新技术的光学火焰检测器。
IR3316S中文资料
Data Sheet No. PD60286IR3316SLOW EMI CURRENT SENSE HIGH SIDE SWITCHFeatures• Load current feedback• Programmable over current shutdown nto Vccwnow EMI protected 4 terminals high side• Active clamp • ESD protectio • Input referenced • Over temperature shutdo • Switching time optimized for l •Reverse battery protectionDescriptionThe IR3316S is a fully switch. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified threshold, the output power Mosfet is turned on. When the Vcc - Vin is lower than the specified Vil threshold, the output Mosfet is turned off. A current proportional to the power Mosfet current is sourced to the Ifb pin. Over current shutdown occurs when Vst-Vin > 4.5V. The current shutdown threshold is adjusted by selecting the proper RIfb. Either over current and over temperature latches off the switch. The device is reset by pulling the input pin high. Other integrated protections (ESD, reverse battery, active clamp) make the switch very rugged in automotive environment.Product SummaryRds(on) 7 m Ω max. Vcc op. 6 to 26V Current Ratio 8800 Prog. Ishutdown 10 to 90AVclamp 40VPackagesD²PakPin 4 and 5 fused IR3316STypical ConnectionIR3316SAbsolute Maximum RatingsAbsolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parametersare referenced to Vcc lead. (Tambient=25°C unless otherwise specified).Symbol Parameter Min. Max. Units Vcc-Vin Maximum Vcc voltage -16 37Vcc-Vin cont. Maximum continuous Vcc voltage -16 26VVcc-Vfb Maximum Ifb voltage -16 33Vcc-Vout Maximum output voltage -0.3 37Ids cont. Maximum body diode continuous current Rth=60°C/W (1) ⎯ 2.8AIds pulsed Maximum body diode pulsed current (1) ⎯100Pd Maximum power dissipation Rth=60°C/W ⎯ 2 WESD1 Electrostatic discharge voltage (Human body) C=100pF, R=1500Ω⎯ 4kVESD2 Electrostatic discharge voltage (Machine Model) C=200pF,R=0Ω⎯0.5Tj max. Max. storage & operating temperature junction temperature -40 150 °CMin Rfb Minimum on the resistor on Ifb pin 0.3 ⎯kΩIfb max. Max. Ifb current -50 50 mA(1) Limited by junction temperature. Pulsed is also limited by wiringThermal CharacteristicsUnits Symbol Parameter Typ.Max.Rth1 Thermal resistance junction to ambient D²-Pak Std footprint 60 ⎯°C/WRth2 Thermal resistance junction to case D²-Pak 0.7 ⎯Recommended Operating ConditionsThese values are given for a quick design. For operation outside these conditions, please consult the application notes.Units Symbol Parameter Min.Max.IoutContinuous output currentTambient=85°C, Rth=60°C/W, Tj=125°C ⎯7 ARifb Recommended Ifb resistor (2)(3) 0.5 3.5 kΩPulse min. Minimum turn-on pulse width 1 ⎯ms Fmax. Maximum operating frequency ⎯200 Hz2) If Rifb is too low, the device can be damaged.3) If Rifb is too high, the device may not switch on.IR3316S Protection CharacteristicsTj=25°C, Rifb=500 to 5kΩSymbol Parameter Min.Typ.Max.Units TestConditionsVifb-Vin@Isd hutdown threshold 4 4.7 5.6 VOver-current sTsd Over temperature threshold ⎯165 ⎯°C ig. 5See fOV Over voltage protection (not latched) 26 29 33 VIsdf Fixed over current shutdown 90120140 Vifb IsdVifb<-Vin@Isd_1k Programmable over current shutdown 1k 30 40 50A1kΩRifb=Treset Time to reset protection ⎯50 500 S fig.ee 5Min. pulse Min. pulse width (no WAIT state) 400 900 2000µsWAIT 0.4 1 2 ms See fig. 4 and 5WAIT function timerRds(on) rev. mΩVcc-Vin=-14V,I30AReverse battery On state resistance 4 6.7 10out=S lecTyp.Max.UnitsTestConditionstatic E trical CharacteristicsT c=14Min.j=25°C, Vc V (unless otherwise specified)Symbol ParameterVcc op. Operating Voltage range 6 ⎯26 VIcc off S current ⎯ 1.5 5µAcc oupply leakage Vin=VV, Vcc-V ut=14V,cc-Vifb=14VIin, on O.5 3 6 mA V in=1n state IN positive current 1cc-V4VVih High level Input threshold voltage (4) 5.4 6.2⎯Vil Low level Input threshold voltage (4) 4 4.9 5.8Vhyst Input hysteresis Vih-Vil 0.2 0.4 1VDrain to source leakage current ⎯ 1.2 5 cc ifbIoutµAuVin=VVcc-Vo, Vcc-Vt=14V=0V, On state resistance (5) Tj=25°C 7 Iout=30A,Vcc-Vin=14V4 5.5O 610 Iout=17A,-Vin=n state resistance (5) Tj=25°C 4 Vcc6V Rds(on)O7 10.5 13.5mΩIout=30A, Vcc-Vin=14V n state resistance (5) Tj=150°CV clamp1 V36 39 ⎯Io50mcc to Vout clamp voltage 1 ut= AV clamp2 Vcc to Vout clamp voltage 2 ⎯40 43VIout=30A(4) Input thresholds are measured directly betweenthe load current path and the input signal path can sthe input pin and the tab. Any parasitic resistance in common betweenignificantly affect the thresholds.(5) Rdson is measured between the tab and the Out pin, 5mm away from the package.Switching Electrical CharacteristicsVcc=14V, Resistive load=0.5Ω, Tj=25°CSymbol Parameter Min. Typ.Max.UnitsTestConditionsTdon Turn on delay time to 10% Vcc 30 120 300Tr1 Rise time to Vcc-Vout=5V 20 50 125Tr2 Rise time to Vcc-Vout=0.1Vcc 30 80 200µsEon Turn on energy ⎯14 ⎯mJTdoff Turn off delay time 30 140 350Tf Fall time to Vout=10% of Vcc 35 100 250µsEoff Turn off energy ⎯7 ⎯mJSee figure 2IR3316S Current Sense Characteristicster Min.Typ.Max.Units TestConditions Symbol ParameRatio I Load/Iifb current ratiout=60A7,5008,800 9,950⎯Tj=25°C, Rfb=500Ω,IoRatio_TC erature 150°CI Load/Iifb variation aver temp-5 ⎯+5 % Tj=-40°C toOffset -0.22 +0.2 ut=2ALoad current diagnostic offset 0 A IoTrst Ifb response time (low signal) ⎯ 1 ⎯µs 90% of the Iout step Functional Block DiagramIR3316SFigure 2 – Switching time definitionsFigure 1 – Voltages and current definitionsIR3316SFigure 3 – Active clamp waveforms Figure 4 – Min. pulse and Wait function ection Timing DFigure 5 – Prot iagramsVcc-VinVcc-VinIR3316S50%100%150%200%-50050100150001*********Vcc-Vin, supply voltage (V) I c c , s u p p l y c u r r e n t (m A )Tj, junction temperature (°C) Tj, junction temperature (°C) V i h , V i l a n d V i f b -V i n @I s d (V ) R d s (o n ), D r a i n -t o -S o u r c e O n R e s i s t a n c e (N o r m a l i z e d )Figure 8 - Normalized Rds(on Tj, junction temperature (°C) il and Vifb-Vin@Isd (V) Vs Tj (°C) 246810Figure 6 – Icc (mA) Vs Vcc-Vin (V) Figure 7 – Icc off (µA) Vs Tj (°C) I c c o f f , s u p p l y l e a k e a g e c u r r e n t (µA )) (%) Vs Tj (°C) Figure 9 – Vih, V 0123456-50-2502550751001251500123456-50050100150ll curves are typical characteristics. Operation in hatched areas is not recommended. Tj=25°C, Rifb=500ohm, Vcc=14V nless otherwise specified).A (uIR3316S0102030-5050100150Figure 10 – Error (+/- A) Vs I load (A)Rifb, feedback resistor (Ω)E r r o r (+/-A )10100100100010000Figure 11 – Ids (A) Vs Rifb (Ω)I s d , o v e r c u r r e n t s h u t d o w n (A )02468101214161802040608010I load, load current (A)Figure 12 – Max. Iout (A) Vs Tamb. (°C)M a x . o u t p u t c u r r e n t (A )Ta )mb., ambient temperature (°C Figure 13 – Max. Iout (A) Vs inductance (µH)Inductance (µH)M a x . o u t p u t c u r r e n t (A )10100101001000IR3316S1.E-011.E+00 1.E+01 1.E+02 1.E+03Pr )Figure ctionresponse time (s)14 – Ids (A) Vs over temperature prote otection response time (sFigure 15 – Transient thermal impedance (°C/W)Vs time (s)IR3316SCase Outline 5 Lead - D2PAKIR3316STape & Reel 5 Lead - D2PAK11IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105Data and specifications subject to change without notice. 9/6/2006D2Pak is MSL1 qualified.This product has been designed and qualified for the Automotive [Q100] market .Qualification standards can be found at 元器件交易网。
IRMCF343中文资料
Data Sheet No. PD60313IRMCF343 Sensorless Motor Control IC for AppliancesFeaturesMCE TM (Motion Control Engine) - Hardware based computation engine for high efficiency sinusoidal sensorless control of permanent magnet AC motor Integrated Power Factor Correction controlSupports both interior and surface permanent magnet motorsBuilt-in hardware peripheral for single shunt current feedback reconstructionNo external current or voltage sensing operational amplifier requiredThree/two-phase Space Vector PWMThree-channel analog output (PWM)Embedded 8-bit high speed microcontroller (8051) for flexible I/O and man-machine controlJTAG programming port for emulation/debugger Serial communication interface (UART)I2C/SPI serial interfaceWatchdog timer with independent analog clockThree general purpose timers/countersTwo special timers: periodic timer, capture timer External EEPROM and internal RAM facilitate debugging and code developmentPin compatible with IRMCK343, OTP-ROM version 1.8V/3.3V CMOS Product SummaryMaximum crystal frequency 60 MHz Maximum internal clock (SYSCLK) frequency 128 MHz Sensorless control computation time 11 μsec typ MCE TM computation data range 16 bit signed Program RAM loaded from external EEPROM 48K bytes Data RAM 8K bytes GateKill latency (digital filtered) 2 μsec PWM carrier frequency counter 16 bits/ SYSCLK A/D input channels 5 A/D converter resolution 12 bits A/D converter conversion speed 2 μsec 8051 instruction execution speed 2 SYSCLK Analog output (PWM) resolution 8 bits UART baud rate (typ) 57.6K bps Number of I/O (max) 23 Package (lead-free) QFP64DescriptionIRMCF343 is a high performance RAM based motion control IC designed primarily for appliance applications. IRMCF343 is designed to achieve low cost and high performance control solutions for advanced inverterized appliance motor control. IRMCF343 contains two computation engines. One is Motion Control Engine (MCE TM) for sensorless control of permanent magnet motors; the other is an 8-bit high-speed microcontroller (8051). Both computation engines are integrated into one monolithic chip. The MCE TM contains a collection of control elements such as Proportional plus Integral, Vector rotator, Angle estimator, Multiply/Divide, Low loss SVPWM, Single Shunt IFB. The user can program a motion control algorithm by connecting these control elements using a graphic compiler. Key components of the sensorless control algorithms, such as the Angle Estimator, are provided as complete pre-defined control blocks implemented in hardware. A unique analog/digital circuit and algorithm to fully support single shunt current reconstruction is also provided. The 8051 microcontroller performs 2-cycle instruction execution (60MIPS at 120MHz). The MCE and 8051 microcontroller are connected via dual port RAM to process signal monitoring and command input. An advanced graphic compiler for the MCE TM is seamlessly integrated into the MATLAB/Simulink environment, while third party JTAG based emulator tools are supported for 8051 developments. IRMCF343 comes with a small QFP64 pin lead-free package.IRMCF343TABLE OF CONTENTS1 Overview (4)2 IRMCF343 Block Diagram and Main Functions (5)3 Pinout (7)4 Input/Output of IRMCF343 (8)4.1 8051 Peripheral Interface Group (8)4.2 Motion Peripheral Interface Group (9)4.3 Analog Interface Group (10)4.4 Power Interface Group (10)4.5 Test Interface Group (11)5 Application Connections (12)6 DC Characteristics (13)6.1 Absolute Maximum Ratings (13)6.2 System Clock Frequency and Power Consumption (13)6.3 Digital I/O DC Characteristics (14)6.4 PLL and Oscillator DC Characteristics (15)6.5 Analog I/O DC Characteristics (15)6.6 Analog I/O DC Characteristics (16)6.7 Under Voltage Lockout DC Characteristics (17)6.8 CMEXT and AREF Characteristics (17)7 AC Characteristics (18)7.1 PLL AC Characteristics (18)7.2 Analog to Digital Converter AC Characteristics (19)7.3 Op Amp AC Characteristics (20)7.4 Op Amp AC Characteristics (20)7.5 SYNC to SVPWM and A/D Conversion AC Timing (21)7.6 GATEKILL to SVPWM AC Timing (22)7.7 Interrupt AC Timing (23)7.8 I2C AC Timing (24)7.9 SPI AC Timing (25)7.9.1 SPI Write AC timing (25)7.9.2 SPI Read AC Timing (26)7.10 UART AC Timing (27)7.11 CAPTURE Input AC Timing (28)7.12 JTAG AC Timing (29)8 Pin List (30)9 Package Dimensions (33)10 Part Marking Information (34)IRMCF343TABLE OF FIGURESFigure 1. Typical Application Block Diagram Using IRMCF343 (4)Figure 2. IRMCF343 Internal Block Diagram (5)Figure 3. IRMCF343 Pin Configuration (7)Figure 4. Input/Output of IRMCF343 (8)Figure 5. Application Connection of IRMCF343 (12)Figure 6. Clock Frequency vs. Power Consumption (13)TABLE OF TABLESTable 1. Absolute Maximum Ratings (13)Table 2. System Clock Frequency (13)Table 3. Digital I/O DC Characteristics (14)Table 4. PLL DC Characteristics (15)Table 5. Analog I/O DC Characteristics (15)Table 6. Analog I/O DC Characteristics (16)Table 7. UVcc DC Characteristics (17)Table 8. CMEXT and AREF DC Characteristics (17)Table 9. PLL AC Characteristics (18)Table 10. A/D Converter AC Characteristics (19)Table 11. Current Sensing OP amp Amp AC Characteristics (20)Table 12. Voltage sensing OP amp Amp AC Characteristics (20)Table 13. SYNC AC Characteristics (21)Table 14. GATEKILL to SVPWM AC Timing (22)Table 15. Interrupt AC Timing (23)Table 16. I2C AC Timing (24)Table 17. SPI Write AC Timing (25)Table 18. SPI Read AC Timing (26)Table 19. UART AC Timing (27)Table 20. CAPTURE AC Timing (28)Table 21. JTAG AC Timing (29)Table 22. Pin List (32)IRMCF343 1 OverviewIRMCF343 is a new International Rectifier integrated circuit device primarily designed as a one-chip solution for complete inverter controlled appliance motor control applications. Unlike a traditional microcontroller or DSP, the IRMCF343 provides a built-in closed loop sensorless control algorithm using the unique Motion Control Engine (MCE TM) for permanent magnet motor. The MCE TM consists of a collection of control elements, motion peripherals, a dedicated motion control sequencer and dual port RAM to map internal signal nodes. IRMCF343 also employs a unique single shunt current reconstruction circuit to eliminate additional analog/digital circuitry and enables a direct shunt resistor interface to the IC. Motion control programming is achieved using a dedicated graphical compiler integrated into the MATLAB/Simulink TM development environment. Sequencing, user interface, host communication, and upper layer control tasks can be implemented in the 8051 high-speed 8-bit microcontroller. The 8051 microcontroller is equipped with a JTAG port to facilitate emulation and debugging tools. Figure 1 shows a typical application schematic using the IRMCF343.IRMCF343 is intended for development purpose and contains 48K bytes of RAM, which can be loaded from external EEPROM for 8051 program execution. For high volume production, IRMCK343 contains OTP ROM in place of program RAM to reduce the cost. Both IRMCF343 and IRMCK343 come in the same 64-pin QFP package with identical pin configuration to facilitate PC board layout and transition to mass productionFigure 1. Typical Application Block Diagram Using IRMCF343IRMCF3432 IRMCF343 Block Diagram and Main FunctionsIRMCF343 block diagram is shown in Figure 2.8b i t u P A d d r e s s /D a t a b u sM o t i o n C o n t r o l B u sFigure 2. IRMCF343 Internal Block DiagramIRMCF343 contains the following functions for sensorless AC motor control applications:• Motion Control Engine (MCE TM )o Proportional plus Integral blocko Low pass filtero Differentiator and lag (high pass filter)o Rampo Limito Angle estimate (sensorless control)o Inverse Clark transformationo Vector rotatoro Bit latchIRMCF343o Peak detecto Transitiono Multiply-divide (signed and unsigned)o Divide (signed and unsigned)o Addero Subtractoro Comparatoro Countero Accumulatoro Switcho Shifto ATAN (arc tangent)o Function block (any curve fitting, nonlinear function)o16-bit wide Logic operations (AND, OR, XOR, NOT, NEGATE)o MCE TM program and data memory (6K byte). Note 1o MCE TM control sequencer•8051 microcontrollero Three 16-bit timer/counterso16-bit periodic timero16-bit analog watchdog timero16-bit capture timero Up to 23 discrete I/Oso Five-channel 12-bit A/DThree buffered channels (0 – 1.2V input)Two unbuffered channels (0 – 1.2V input)o JTAG port (4 pins)o Up to three channels of analog output (8-bit PWM)o UARTo I2C/SPI porto48K byte program RAM loaded from external EEPROMo2K byte data RAM. Note 1Note 1: Total size of RAM is 8K byte including MCE program, MCE data, and8051 data. Different sizes can be allocated depending on applications.IRMCF3433 PinoutV S SV D D 2A V D DA V S SA I N 0A R E FP 2.7/A O P W M 1P 2.6/A O P W MI F B C OI F B C +I F B C -P L L V S SP L L V D DR E S E TT S T M O DT C KP 5.3/T D IP 5.2/T D OP 5.1/T M SS D A /C S 0S C L /S O -S IP 5.0/P F C G K I L L P F C P W MV SSC M E X TA I N 1P 3.2/I N T0P 2.3P 2.4P 2.5P 3.1/A O P W M 2V D D1Figure 3. IRMCF343 Pin ConfigurationIRMCF3434 Input/Output of IRMCF343All I/O signals of IRMCF343 are shown in Figure 4. All I/O pins are 3.3V logic interface except A/D interface pins.Figure 4. Input/Output of IRMCF3434.1 8051 Peripheral Interface GroupUART InterfaceP1.2/TXD Output, Transmit data from IRMCF343P1.1/RXD Input, Receive data to IRMCF343Discrete I/O InterfaceP1.0/T2 Input/output port 1.0, can be configured as Timer/Counter 2 inputP1.3/SYNC/SCK Input/output port 1.3, can be configured as SYNC output or SPI clock,needs to be pulled up to VDD1 in order to boot from I 2C EEPROMP1.4/CAP Input/output port 1.4, can be configured as Capture Timer inputIRMCF343 P1.5 Input/output port 1.5P1.6 Input/output port 1.6P1.7 Input/output port 1.7P2.0/NMI Input/output port 2.0, can be configured as Non-maskable interrupt inputP2.1 Input/output port 2.1P2.2 Input/output port 2.2P2.3 Input/output port 2.3P2.4 Input/output port 2.4P2.5 Input/output port 2.5P3.0/INT2/CS1 Input/output port 3.0, can be configured as INT2 input or SPI chip select1P3.2/INT0 Input/output port 3.2, can be configured as INT0 inputAnalog Output InterfaceP2.6/AOPWM0 Input/output, can be configured as 8-bit PWM output 0 withprogrammable carrier frequencyP2.7/AOPWM1 Input/output, can be configured as 8-bit PWM output 1 withprogrammable carrier frequencyP3.1/AOPWM2 Input/output, can be configured as 8-bit PWM output 2 withprogrammable carrier frequencyCrystal InterfaceXTAL0 Input, connected to crystalXTAL1 Output, connected to crystalReset InterfaceRESET Inout, system reset, needs to be pulled up to VDD1 but doesn’t requireexternal RC time constantI2C/SPI InterfaceI2C clock output or SPI dataSCL/SO-SI Output,I2C data line or SPI chip select 0SDA/CS0 Input/output,P3.0/INT2/CS1 Input/output, INT2 or SPI chip select 1P1.3/SYNC/SCK Input/output, SYNC output or SPI clock, needs to be pulled up to VDD1in order to boot from I2C EEPROM4.2 Motion Peripheral Interface GroupPWMPWMUH Output, PWM phase U high side gate signalPWMUL Output, PWM phase U low side gate signalPWMVH Output, PWM phase V high side gate signalPWMVL Output, PWM phase V low side gate signalPWMWH Output, PWM phase W high side gate signalIRMCF343 PWMWL Output, PWM phase W low side gate signalPFCPWM Output, PFC PWM gate signalFaultGATEKILL Input, upon assertion, this negates all six PWM signals, programmablelogic senseP5.0/PFCGKILL Input, upon assertion, this negates PFCPWM signal, programmable logicsense, can be configured as discrete I/O in which case CGATEKILLnegates PFCPWM4.3 Analog Interface GroupAVDD Analog power (1.8V)AVSS Analog power returnCMEXT Unbuffered 0.6V, input to the AREF buffer, capacitor needs to beconnected.AREF 0.6V buffered outputIFB+ Input, Operational amplifier positive input for shunt resistor currentsensingIFB- Input, Operational amplifier negative input for shunt resistor currentsensingIFBO Output, Operational amplifier output for shunt resistor current sensingIPFC+ Input, Operational amplifier positive input for PFC current sensingIPFC- Input, Operational amplifier negative input for PFC current sensingIPFO Output, Operational amplifier output for PFC current sensingVAC+ Input, Operational amplifier positive input for PFC AC voltage sensingVAC- Input, Operational amplifier negative input for PFC AC voltage sensingVACO Output, Operational amplifier output for PFC AC voltage sensingAIN0 Input, Analog input channel 0 (0 – 1.2V), typically configured for DC busvoltage inputAIN1 Input, analog input channel 1 (0 – 1.2V), needs to be pulled down toAVSS if unused4.4 Power Interface GroupVDD1 Digital power for I/O (3.3V)VDD2 Digital power for core logic (1.8V)VSS DigitalcommonPLLVDD PLL power (1.8V)PLLVSS PLL ground return元器件交易网IRMCF3434.5Test Interface GroupMust be tied to VSS, used only for factory testing. Input, JTAG test data input Input, JTAG test mode select Input, JTAG test clock Output, JTAG test data outputTSTMOD P5.3/TDI P5.1/TMS TCK P5.2/TDOThis document is the property of International Rectifier and may not be copied or distributed without expressed consent.11元器件交易网IRMCF343 5 Application ConnectionsTypical application connection is shown in Figure 5. All components necessary to implement a complete sensorless drive control algorithm are shown connected to IRMCF343.Figure 5.Application Connection of IRMCF343This document is the property of International Rectifier and may not be copied or distributed without expressed consent.12元器件交易网IRMCF343 6 DC Characteristics6.1 Absolute Maximum RatingsParameter Supply Voltage Supply Voltage Analog Input Voltage Digital Input Voltage Ambient Temperature Storage Temperature Table 1. Min Typ Max -0.3 V 3.6 V -0.3 V 1.98 V -0.3 V 1.98 V -0.3 V 3.65 V -40 ˚C 85 ˚C -65 ˚C 150 ˚C Absolute Maximum Ratings Condition Respect to VSS Respect to VSS Respect to AVSS Respect to VSSSymbol VDD1 VDD2 VIA VID TA TSCaution: Stresses beyond those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and function of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied.6.2System Clock Frequency and Power ConsumptionParameter System Clock Table 2. Min Typ Max 32 128 System Clock Frequency Unit MHzSymbol SYSCLK240 200 160 Power (mW) 120 80 VDD2 (1.8V) 40 0 0 50 100 Clock Frequency (MHz) 150 VDD1 (3.3V) TotalFigure 6.Clock Frequency vs. Power ConsumptionThis document is the property of International Rectifier and may not be copied or distributed without expressed consent.13元器件交易网IRMCF3436.3VDD1 VDD2 VIL VIH CIN IL IOL1(2) IOH1(2) IOL2(3) IOH2(3)Digital I/O DC CharacteristicsParameter Supply Voltage Supply Voltage Input Low Voltage Input High Voltage Input capacitance Input leakage current Low level output current High level output current Low level output current High level output current Table 3. Min 3.0 V 1.62 V -0.3 V 2.0 V 8.9 mA 12.4 mA 17.9 mA 24.6 mA Typ 3.3 V 1.8 V 3.6 pF ±10 nA 13.2 mA 24.8 mA 26.3 mA 49.5 mA Max 3.6 V 1.98 V 0.8 V 3.6 V ±1 μA 15.2 mA 38 mA 33.4 mA 81 mA Condition Recommended Recommended Recommended Recommended(1)SymbolVO = 3.3 V or 0 V VOL = 0.4 V(1) (1) (1) (1)VOH = 2.4 V VOL = 0.4 V VOH = 2.4 VDigital I/O DC CharacteristicsNote: (1) Data guaranteed by design. (2) Applied to SCL/SO-SI, SDA/CS0 pins. (3) Applied to P1.0/T2, P1.1/RXD, P1.2/TXD, P1.3/SYNC/SCK, P1.4/CAP, P1.5, P1.6, P1.7, P2.0/NMI, P2.1, P2.2, P2.3, P2.4, P2.5, P2.6/AOPWM0, P2.7/AOPWM1, P3.0/INT2/CS1, P3.1/AOPWM2, P3.2/INT0, P5.0/PFCGKILL, P5.1/TMS, P5.2/TDO, P5.3/TDI, GATEKILL, PWMUL, PWMUH, PWMVL, PWMVH, PWMWL, PWMWH, and PFCPWM pins.This document is the property of International Rectifier and may not be copied or distributed without expressed consent.14元器件交易网IRMCF3436.4 PLL and Oscillator DC CharacteristicsParameter Min Typ Max Supply Voltage 1.62 V 1.8 V 1.92 V Oscillator Input Low VPLLVSS 0.2* Voltage VPLLVDD Oscillator Input High 0.8* VPLLVDD Voltage VPLLVDD Table 4. PLL DC Characteristics Condition Recommended VPLLVDD = 1.8 V(1) (1)Symbol VPLLVDD VIL OSC VIH OSCVPLLVDD = 1.8 VNote: (1) Data guaranteed by design.6.5Analog I/O DC Characteristics- OP amps for current sensing (IFB+, IFB-, IFBO, IPFC+, IPFC-, IPFCO) CAREF = 1nF, CMEXT= 100nF. Unless specified, Ta = 25˚C. Symbol Parameter Min Typ VAVDD Supply Voltage 1.71 V 1.8 V VOFFSET Input Offset Voltage VI Input Voltage Range 0V VOUTSW OP amp output 50 mV (1) operating range CIN Input capacitance 3.6 pF RFDBK OP amp feedback 5 kΩ resistor OP GAINCL CMRR ISRC ISNKMax 1.89 V 26 mV 1.2 V 1.2 V 20 kΩCondition Recommended VAVDD = 1.8 V Recommended VAVDD = 1.8 V(1)Operating Close loop 80 db Gain Common Mode 80 db Rejection Ratio Op amp output source 1 mA current Op amp output sink 100 μA current Table 5. Analog I/O DC Characteristics(1) (1)Requested between op amp output and negative inputVOUT = 0.6 V(1) (1)VOUT = 0.6 VNote: (1) Data guaranteed by design.This document is the property of International Rectifier and may not be copied or distributed without expressed consent.15元器件交易网IRMCF3436.6 Analog I/O DC Characteristics- OP amp for voltage sensing (VAC+,VAC-,VACO) CAREF = 1nF, CMEXT= 100nF. Unless specified, Ta = 25˚C. Symbol Parameter Min Typ Max VAVDD Supply Voltage 1.71 V 1.8 V 1.89 V VOFFSET Input Offset Voltage 26 mV VI Input Voltage Range 0V 1.2 V 1.2 V VOUTSW OP amp output 50 mV (1) operating range CIN Input capacitance 3.6 pF OP GAINCL Operating Close loop 80 db Gain CMRR Common Mode 80 db Rejection Ratio ISRC Op amp output source 5 mA current ISNK Op amp output sink 500 μA current Table 6. Analog I/O DC Characteristics Note: (1) Data guaranteed by design.Condition VAVDD = 1.8 V VAVDD = 1.8 V(1) (1) (1)VOUT = 0.6 V(1) (1)VOUT = 0.6 VThis document is the property of International Rectifier and may not be copied or distributed without expressed consent.16元器件交易网IRMCF3436.7 Under Voltage Lockout DC Characteristics- Based on AVDD (1.8V) Unless specified, Ta = 25˚C. Symbol Parameter Min Typ Max UVCC+ UVcc positive going 1.53 V 1.66 V 1.71 V Threshold UVCCUVcc negative going 1.52 V 1.62 V 1.71 V Threshold UVCCH UVcc Hysteresys 40 mV Table 7. UVcc DC CharacteristicsCondition VDD1 = 3.3 V VDD1 = 3.3 V6.8CMEXT and AREF CharacteristicsCAREF = 1nF, CMEXT= 100nF. Unless specified, Ta = 25˚C. Condition Symbol Parameter Min Typ Max VCM CMEXT voltage 495 mV 600 mV 700 mV VAVDD = 1.8 V VAREF Buffer Output Voltage 495 mV 600 mV 700 mV VAVDD = 1.8 V (1) Load regulation (VDC1 mV ΔVo 0.6) (1) PSRR Power Supply Rejection 75 db Ratio Table 8. CMEXT and AREF DC Characteristics Note: (1) Data guaranteed by design.This document is the property of International Rectifier and may not be copied or distributed without expressed consent.17元器件交易网IRMCF343 7 AC Characteristics7.1FCLKIN FPLL FLWPW JS D TLOCKPLL AC CharacteristicsParameter Min Typ Max Condition (1) Crystal input 3.2 MHz 4 MHz 60 MHz frequency (see figure below) Internal clock 32 MHz 50 MHz 128 MHz (1) frequency (1) Sleep mode output FCLKIN ÷ 256 frequency (1) Short time jitter 200 psec (1) Duty cycle 50 % PLL lock time 500 μsec (1) Table 9. PLL AC CharacteristicsSymbolNote: (1) Data guaranteed by design.R1=1MR2=10XtalC1=30PF C2=30PFThis document is the property of International Rectifier and may not be copied or distributed without expressed consent.18元器件交易网IRMCF3437.2 Analog to Digital Converter AC CharacteristicsMin Typ Max 2.05 μsec 10 μsec Condition(1)Unless specified, Ta = 25˚C. Symbol Parameter TCONV Conversion time THOLD Sample/Hold maximum hold time Table 10. Note: (1) Data guaranteed by design.Voltage droop ≤ 15 LSB (see figure below)A/D Converter AC CharacteristicsInput Voltage Voltage droop S/H VoltagetSAMPLE THOLDThis document is the property of International Rectifier and may not be copied or distributed without expressed consent.19元器件交易网IRMCF3437.3 Op Amp AC Characteristics- OP amps for current sensing (IFB+, IFB-, IFBO, IPFC+, IPFC-, IPFCO) Unless specified, Ta = 25˚C. Symbol Parameter OPSR OP amp slew rate OPIMP TSET OP input impedance Settling time Table 11.Min -Typ 10 V/μsec 108 Ω 400 nsMax -(1)Condition VAVDD = 1.8 V, CL = 33 pF (1)VAVDD = 1.8 V, CL = 33 pF (1) Current Sensing OP amp Amp AC CharacteristicsNote: (1) Data guaranteed by design.7.4Op Amp AC Characteristics- OP amp for voltage sensing (VAC+,VAC-,VACO) Unless specified, Ta = 25˚C. Symbol Parameter OPSR OP amp slew rate OPIMP TSET OP input impedance Settling time Table 12.MinTyp 2.5 V/μsec 108 Ω 650 nsMax --(1)Condition VAVDD = 1.8 V, CL = 33 pF (1)VAVDD = 1.8 V, CL = 33 pF (1) Voltage sensing OP amp Amp AC CharacteristicsNote: (1) Data guaranteed by design.This document is the property of International Rectifier and may not be copied or distributed without expressed consent.20IRMCF343 7.5 SYNC to SVPWM and A/D Conversion AC TimingSYNC IU,IV,IW t wSYNCt dSYNC1AINxt dSYNC2PWMUx,PWMVx,PWMWxt dSYNC3Unless specified, Ta = 25˚C.Symbol Parameter Min Typ Max Unitt wSYNC SYNC pulse width - 32 - SYSCLKt dSYNC1SYNC to currentfeedback conversiontime- - 100 SYSCLKt dSYNC2SYNC to AIN0-6analog inputconversion time - - 200 SYSCLK(1)t dSYNC3SYNC to PWM outputdelay time- - 2 SYSCLKTable 13. SYNC AC CharacteristicsNote:(1) AIN1 through AIN6 channels are converted once every 6 SYNC eventsIRMCF343 7.6 GATEKILL to SVPWM AC TimingUnless specified, Ta = 25˚C.Symbol Parameter Min Typ Max Unitt wGK GATEKILLpulsewidth 32 - - SYSCLKt dGK GATEKILL to PWMoutput delay- - 100 SYSCLK Table 14. GATEKILL to SVPWM AC TimingIRMCF3437.7 Interrupt AC TimingUnless specified, Ta = 25˚C. Symbol Parameter Min Typ Max Unitt wINT INT0, INT1 Interrupt Assertion Time4 - - SYSCLKt dINT INT0, INT1 latency - - 4 SYSCLKTable 15. Interrupt AC TimingIRMCF343 7.8 I2C AC TimingSCLSDA t I2ST1t I2ST2t I2WSETUPT I2CLKt I2WHOLD tI2RSETUPt I2RHOLDT I2CLKt I2EN1t I2EN2Unless specified, Ta = 25˚C.Symbol Parameter Min TypMax Unit T I2CLK I2C clock period 10 - 8192 SYSCLKt I2ST1I2C SDA start time 0.25 - - T I2CLKt I2ST2I2C SCL start time 0.25 - - T I2CLKt I2WSETUP I2C write setup time 0.25 - - T I2CLKt I2WHOLD I2C write hold time 0.25 - - T I2CLKt I2RSETUP I2C read setup time I2C filter time(1) - - SYSCLK t I2RHOLD I2C read hold time 1 - - SYSCLKTable 16. I2C AC TimingNote:(1) I2C read setup time is determined by the programmable filter time applied to I2Ccommunication.IRMCF3437.9 SPI AC Timing7.9.1 SPI Write AC timingUnless specified, Ta = 25˚C.Symbol Parameter Min Typ Max UnitT SPICLK SPI clock period 4 - - SYSCLK tSPICLKHT SPI clock high time - 1/2 - T SPICLKt SPICLKLT SPI clock low time - 1/2 - T SPICLK t CSDELAY CS to data delay time - - 10 nsec t WRDELAY CLK falling edge to datadelay time- - 10 nsect CSHIGH CS high time between two consecutive byte transfer1 - - T SPICLKtCSHOLD CS hold time - 1 - T SPICLKTable 17. SPI Write AC TimingIRMCF3437.9.2 SPI Read AC TimingUnless specified, Ta = 25˚C.Symbol Parameter Min Typ Max UnitTSPICLK SPI clock period 4 - - SYSCLKt SPICLKHT SPI clock high time - 1/2 - T SPICLK t SPICLKLT SPI clock low time - 1/2 - T SPICLKtCSRD CS to data delay time - - 10 nsec t RDSU SPI read data setup time 10 - - nsec t RDHOLD SPI read data hold time 10 - - nsec tCSHIGH CS high time between twoconsecutive byte transfer1 - - T SPICLKt CSHOLD CS hold time - 1 - T SPICLKTable 18. SPI Read AC TimingIRMCF343 7.10 UART AC TimingTXDRXDData and Parity BitStart BitT BAUDStop BitT UARTFILUnless specified, Ta = 25˚C.Symbol Parameter Min Typ Max Unit T BAUD Baud Rate Period - 57600 - bit/secT UARTFIL UART sampling filterperiod (1)- 1/16 - T BAUDTable 19. UART AC TimingNote:(1) Each bit including start and stop bit is sampled three times at center of a bit at an interval of1/16 T BAUD. If three sampled values do not agree, then UART noise error is generated.IRMCF343 7.11 CAPTURE Input AC TimingUnless specified, Ta = 25˚C.Symbol Parameter MinTyp Max UnitT CAPCLK CAPTUREinputperiod8 - - SYSCLKt CAPHIGH CAPTURE input hightime4 - - SYSCLKt CAPLOW CAPTURE input lowtime4 - - SYSCLKt CRDELAY CAPTURE falling edgeto capture register latchtime- - 4 SYSCLKt CLDELAY CAPTURE rising edgeto capture register latchtime- - 4 SYSCLK t INTDELAY CAPTUREinputinterrupt latency time- - 4 SYSCLKTable 20. CAPTURE AC TimingIRMCF343 7.12 JTAG AC TimingTCK TDO t JHIGHT JCLKt COt JLOWt JSETUPt JHOLDTDI/TMSUnless specified, Ta = 25˚C.Symbol Parameter MinTypMaxUnit T JCLK TCKPeriod - - 50 MHzt JHIGH TCK High Period 10 - - nsect JLOW TCK Low Period 10 - - nsect CO TCK to TDO propagationdelay time0 - 5 nsect JSETUP TDI/TMS setup time 4 - - nsect JHOLD TDI/TMS hold time 0 - - nsecTable 21. JTAG AC TimingIRMCF343 8 Pin ListPinNumber Pin Name Internal ICPull-up/Pull-downPinType Description1 XTAL0 I Crystalinput2 XTAL1 O Crystaloutput3 P1.0/T2 I/O Discreteprogrammable I/O or Timer/Counter 2input4 P1.1/RXD I/O Discrete programmable I/O or UART receiveinput5 P1.2/TXD I/O Discrete programmable I/O or UART transmitoutput6 P1.3/SYNC/SCK I/ODiscreteprogrammable I/O or SYNC output orSPI clock, needs to be pulled up to VDD1 inorder to boot from I2C EEPROM7 P1.4/CAP I/O Discreteprogrammable I/O or Capture Timerinput8 P1.5 I/O Discrete programmable I/O9 P1.6 I/O Discrete programmable I/O10 P1.7 I/O Discrete programmable I/O11 VDD2 P 1.8V digital power12 VSS P Digitalcommon13 VDD1 P 3.3V digital power14 P2.0/NMI I/O Discrete programmable I/O or Non-maskableInterrupt input15 P2.1 I/O Discrete programmable I/O16 P2.2 I/O Discrete programmable I/O17 P2.3 I/O Discrete programmable I/O18 P2.4 I/O Discrete programmable I/O19 P2.5 I/O Discrete programmable I/O20 P2.6/AOPWM0I/O Discrete programmable I/O or PWM 0 output21 P2.7/AOPWM1I/O Discrete programmable I/O or PWM 1 output22 VDD2 P 1.8V digital power23 VSS P Digitalcommon24 AIN0 I Analog input channel 0, 0-1.2V range, needs tobe pulled down to AVSS if unused25 AVDD P 1.8V analog power26 AVSS P Analogcommon27 AIN1 I Analog input channel 1, 0-1.2V range, needs tobe pulled down to AVSS if unused。
红外ir格式
红外(IR)格式通常指的是红外遥控器与接收设备之间通信的数据格式。
不同的红外遥控器和接收设备可能采用不同的数据格式,因此没有统一的标准。
一般来说,红外数据格式包括引导码、设备码、键值码等部分。
引导码用于标识数据传输的开始,设备码用于标识特定的接收设备,而键值码则代表具体的操作指令。
这些代码通常以一系列不同周期和不同占空比的脉冲来表示逻辑0和逻辑1。
在解析红外信号时,接收设备会根据引导码识别出数据传输的开始,然后解析设备码和键值码,以执行相应的操作。
需要注意的是,由于红外信号容易受到干扰,因此在实际应用中可能需要进行一些特殊的处理,如增加校验位、使用特定的编码方式等,以提高数据传输的可靠性。
小区域红外发射器用户手册说明书
IR T1Small Area Infrared TransmitterMAN 212HIR T1 Small Area Infrared TransmitterImportant Safety InstructionsPlease read and keep these instructions.WARNING! To reduce the risk of fire or electric shock, do not expose the system to rain or moisture. Do not use this apparatus near water. The system should not be exposed to dripping or splashing, and objects filled with liquids such as beverages should not be placed on the transmitter or receivers. Clean only with a dry cloth.Attempting to service this device will void the warranty • Refer servicing to qualified personnel. Servicing is required when the system has been damaged in any way: if liquid has been spilled or objects have fallen into the unit, if the unit has been exposed to moisture, if the unit does notoperate normally, or if the unit has been dropped.• Do not block any ventilation openings. Install in accordance withmanufacturer’s instructions.• Do not install near any heat sources such as radiators, heat registers,stoves, or other apparatus that produces heat.• Use only attachments/accessories specified by the manufacturer.• Unplug the transmitter during lightning storms or when unused for long periods of time.• Be advised that different operating voltages require the use of differentattachment plugs. Check the voltage in your area and use the correct type.• Use only the power supply provided by Williams AV. Other power supplies may have similar specifications, but may not be equivalent in emissionsratings, in-rush current, etc. Use of an unapproved power supply may leave the device partially or completely inoperable, and will void the warranty.• Protect the power cord from being walked on or pinched, particularly atplugs, receptacles, and near the power jack on the transmitter.• This apparatus must be grounded.• The AC Power plug or an appliance coupler is used as the disconnectdevice, so the disconnect device should remain readily operable.For Customers in The United StatesThis equipment has been tested and found to comply with the limits for Class B digital device, pursuant to part 15 of the FCC rules.For Customers in CanadaThis Class B digital device meets all requirements of the Canadian Interference-causing Equipment Regulations. Cet appareil numérique de la classe B respecte toutes les exigencies du Règlement sur le matériel brouilleur du Canada.IR T1 Small Area Loop Infrared Transmitter Recycling InstructionsPlease help Williams AV protect the environment. Please take the time to dispose of your equipment properly.Product Recycling for Customers in the European Union:Please do NOT dispose of your Williams AV equipment in the householdtrash. Take the equipment to a electronics recycling center, or return theproduct to the factory for proper disposal.System OverviewThe IR T1 is a two-channel infrared transmitter combining infrared modulator and emitter technology into a single mountable enclosure—which reduces operating costs, eliminates the need for rack space and eases set-up.The IR T1 is ideal for high quality audio programs such as music, television audio, and audio description. The IR T1 will accept any line level stereo audio input. Infrared receivers detect the transmission and convert the light signals backinto audio signals. The IR T1 operating frequencies (2.3/2.8 MHz) minimize high efficiency lighting interference.No FCC license or radio approval is required with this equipment. It can be used anywhere in the world.NOTE: This equipment has been tested and found to comply with the limits fora Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual, may cause harmful interference to radio communications. Operation of this equipment in a residential area may cause interference, in which case the user will be required to correct the interference at his own expense.NOTE: A PLASMA MONITOR OR TELEVISION CAN DEGRADE THE AUDIO QUALITY OF THE IR T1 TRANSMITTER. FOR BEST PERFORMANCE, THE TRANSMITTER SHOULD BE POSITIONED AS FAR AWAY AS POSSIBLE FROM ANY PLASMA MONITOR, TELEVISION OR OTHER INTERFERING DEVICES. Installation ProceduresDetermine Coverage AreaWhen using the IR T1 transmitter with the RX22-4 receiver, the system coverage area will exceed 1,300 sq. ft. (120 sq. m.). Other receivers may have a reduced coverage area. Figure 1 illustrates typical coverage pattern for the IR T1. This can be affected by direct/indirect sunlight, reflections on walls, objects in the room and room construction. The patterns illustrated are the direct radiation pattern. Most objects block infrared light, so the transmitter cannot be concealed behind walls, glass, curtains, etc. The infrared radiation does not drop to zero outsidethe illustrated patterns; it decreases. It still may be useable at a greater distance, depending on the receiver sensitivity and the reflective characteristics of the room. Important: Remember to point the transmitter towards the listening audience. The front is the surface with the Williams AV logo as shown on the cover of this manual.See Figure 1 on the next page for a coverage pattern.IR T1 Small Area Infrared Transmitter Figure 1 - IR T1 Coverage PatternWIR RX22-4 Receiver - solid line || IR RX20 - dashed lineConnections & IndicatorsFigure 2 - IR T1 Rear ViewConnecting Power1. Snap in the correct adapter for your region into the TFP 055 power supply.2. Plug the USB end of the “USB to micro USB cord” into the power supply.3. Plug the micro USB end of the “USB to micro USB cable” into the IR T1.4. Plug the power supply into an AC outlet.Alternatively, you may plug the USB end of the cord into a direct USB power source, such as the USB port on a television, etc. to power the IR T1.On power up, the IR T1 performs a self-test to detect damage due to shipping, handling, tampering or incorrect operation. If any failure is present, the green power LED will blink rapidly. If this occurs, contact Williams AV Customer Service. This system is designed for class 2, low-voltage wiring. Always follow local electrical codes when using low-voltage wiring.IR T1 Small Area Loop Infrared Transmitter Audio Indicators (Ch. 1,2)The audio indicator LEDs (see Figure 2) will light up yellow when an adequate level of input audio is sensed on that channel. If audio is present, but not high enough to produce acceptable audio quality, the LED will not light. Once an adequate level of audio is fed to the unit, the LED will stay on. If the audio level falls below the acceptable threshold, the LED will go out, and the sleep timer will start to turn off that channel after approximately 12 minutes (See “Sleep Mode” below).Sleep ModeThe IR T1 is equipped with a sleep mode/power save feature. If a minimum acceptable audio level is not present on a channel (both channels are independent), a timer begins, and after approximately 12 minutes that channel will automatically go into sleep/power save mode. The timer begins when the yellow channel LED goes out. Both channels are independent; one can be broadcasting while the other goes to sleep (shuts off infrared output).This mode decreases power consumption by 80 percent. Audio will automatically begin broadcasting again when the audio input threshold is triggered.Connecting the Audio SourceThe IR T1 detects the presence of audio on the Audio Line Input jack, lights up the LED for the channel(s) where an adequate level of incomiing audio is present, and transmits on either/both channels.The IR T1 will accept line level mono or stereo audio inputs. See figure 3 for audio input cable configuration.The IR T1 uses a limiter circuit to control the gain of line level audio for optimum transmission. The yellow Audio Indicator LED should stay on when when an adequate level of input audio is present. If the audio indicators do not stay on, the audio level is too low. Adjust the gain of the audio source up until they stay on. Figure 3 - 3.5mm plug/input jack wiringOptional Receiver(s)WIR RX22-4 4-Channel, Body Pack Receiver (requires earphones, headphones, or neckloop)WIR RX20 2-Channel, Under-the-Chin ReceiverIR T1 Small Area Infrared TransmitterTroubleshootingThe IR T1 is equipped with a series of self-tests. If the power indicator on the unit is blinking rapidly, an error has occurs which requires returning the unit for service. The IR T1 “Power Indicator” is not lit:• Make sure the power supply is plugged into the transmitter and any remote power switch is on.• Make sure the electrical outlet is on.• Make sure the 5 VDC USB power supply is working.The IR T1’s Ch1 or Ch2 “Audio Indicator” does not light:• Make sure the IR T1 is plugged in.• Make sure the audio input is connected properly. Refer to figure 3.• Make sure an active and adequate level of audio signal is being sent to the IR T1 transmitter.No Sound through Receivers:• Check to make sure the receiver is operating on the same frequency as the transmitter.• If some of the receivers work but others don’t, check for bad batteries or earphones.• If none of the receivers work, check to see if the power and audio input cables are connected to the transmitter. Verify that the “Power Indicator” LED is on, and Ch1 or Ch2 “audio indicator” LED(s) are on.• Make certain the transmitter is not covered by objects which would block infrared light.Sound Through the Receivers is Weak and Noisy:• Make certain the user is facing towards the transmitter. Move the user closer to the transmitter, or reposition the transmitter closer to the user as appropriate.• Try adjusting the audio input level on the source.• Reposition the transmitter beam, making certain the front (curved) face of the transmitter is pointed directly towards the listener.Buzzing or Humming Noise in Sound System:• Check for ground loops or noise on the input signal.If these instructions do not address your problem or the issue persists, please call your authorized Williams AV dealer or representative.Mounting Options• STD 008 – TV Top Shelf (optional)• BKT 024 - Universal wall / ceiling mount (optional)• The IR T1 can be mounted on any camera tripod stands with a 1/4” - 20 threaded connectorIR T1 Small Area Loop Infrared Transmitter Infrared Transmitter SpecificationsModel IR T1Dimensions:Width: 5.65”(14.4 cm), Depth: 3.65”(9.3 cm), Height:1.15”(2.9 cm)Weight:8.3 oz (235 g)Color:BlackPower Supply:TFP 055 – 100-240VAC 50/60Hz Input, 5VDC, 0.2A USBOutput, Universal Supply with international adaptersOther USB Power Supply (must be at least 5VDC, 0.2A) Power Cable:USB to micro USB cableDC Power Input:Micro USB connector, 5VDC, 0.2APower Indicator:Green LEDSleep/Power Save Mode:Shuts off carrier when no audio present for 12 minutes Modulation:FM Wideband, ±50 kHz deviation max, 50 μS pre-emphasisCarrier Frequencies: 2.3MHz (Ch 1) and 2.8MHz (Ch 2)Default at power on = carriers off. Carriers areautomatically enabled upon presence of audio. Coverage Area:1,300 sq. ft (120 sq. m.) with the WIR RX22-41000 sq. ft. (93 sq. m.) with the IR RX20Audio Inputs: 3.5mm stereo line level input jack, Ch 1 connected to tip,Ch 2 connected to ring, GND connected to sleeve Audio Indicators:One Y ellow LED per channel, lights up and stays onsteady with minimum audio level.Signal-to-Noise Ratio:70 dB at onset of limitingFrequency Response:100 - 12,000 HzOperating Requirements:32°-122°F (0-50°C)Mounting Kit:Optional: STD 008 TV Top Shelf Mounting KitOptional: BKT 024 Omnidirectional mount for wall orceiling mountingCompatible Receivers:WIR RX22-4, IR RX20Warranty: 2 yearsApprovals/Regulatory Compliance:CE, RCM, FCC, Industry Canada, PSE, CUL, WEEE, RoHS, CB SchemeNOTE: Specifications are subject to change without notice.Visit our website for the latest specifications and publications: Hereby, Williams AV declares that the infrared equipment is in compliance withDirectives 2014/30/EU, 2014/35/EU and other Union harmonization as applicable. The full text of the EU declaration of conformity is available by contacting Williams AV at the following email address: *************************Limited WarrantyWilliams AV products are engineered, designed, and manufactured under carefully controlled conditions to provide many years of reliable service. Williams AV warrants the IR T1 infrared listening system against defects in materials and workmanship for two (2) years. During the first two years from the purchase date, we will promptly repair or replace the IR T1 infrared listening system. Microphones, earphones, headphones, batteries, chargers, cables, carry cases, and all other accessory products carry a 90-day warranty.WILLIAMS AV HAS NO CONTROL OVER THE CONDITIONS UNDER WHICH THIS PRODUCT IS USED. WILLIAMS AV, THEREFORE, DISCLAIMS ALL WARRANTIES NOT SET FORTH ABOVE, BOTH EXPRESS AND IMPLIED, WITH RESPECT TO THE IR T1 INFRARED LISTENING SYSTEM, INCLUDING BUT NOT LIMITEDTO, ANY IMPLIED WARRANTY OF MERCHANTABILITY OR FITNESS FOR A PARTICULAR PURPOSE. WILLIAMS AV SHALL NOT BE LIABLE TO ANY PERSON OR ENTITY FOR ANY MEDICAL EXPENSES OR ANY DIRECT, INCIDENTALOR CONSEQUENTIAL DAMAGES CAUSED BY ANY USE, DEFECT, FAILUREOR MALFUNCTIONING OF THE PRODUCT, WHETHER A CLAIM FOR SUCH DAMAGES IS BASED UPON WARRANTY, CONTRACT, TORT OR OTHERWISE, THE SOLE REMEDY FOR ANY DEFECT, FAILURE OR MALFUNCTION OFTHE PRODUCTS REPLACEMENT OF THE PRODUCT. NO PERSON HAS ANY AUTHORITY TO BIND WILLIAMS AV TO ANY REPRESENTATION OR WARRANTY WITH RESPECT TO THE IR T INFRARED LISTENING SYSTEM. UNAUTHORIZED REPAIRS OR MODIFICATIONS WILL VOID THE WARRANTY.The exclusions and limitations set out above are not intended to, and should not be construed so as to contravene mandatory provisions of applicable law. If any part or term of this Disclaimer of Warranty is held to be illegal, unenforceable, or in conflict with applicable law by a court of competent jurisdiction, the validity of the remaining portions of this Disclaimer of Warranty shall not be affected, and all rights and obligations shall be construed and enforced as if this Limited Warranty did not contain the particular part or term held to be invalid.If you experience difficulty with your system, call toll-free for customer assistance: 1-800-843-3544 (U.S.A.) or +1 952 943 2252 (outside the U.S.A.)If it is necessary to return the system for service, your Customer Service Representative will give you a Return Authorization Number (RA) and shipping instructions.Pack the system carefully and send it to:Williams AVAttn: Repair Dept.10300 Valley View RoadEden Prairie, MN 55344 USAY our warranty becomes effective the date you purchase your system. If your sales receipt is not available, the date code on the product will determine your warranty status.*******************/800-843-3544 / INTL: +1-952-943-2252©2021 Williams AV • All Rights Reserved MAN 212H。
ir常用编码格式
ir常用编码格式
IR(中间代码)的常用编码格式包括三地址码(Three Address Code,TAC)、树表达式(Tree Expression)和三范式(Three Normal Form,3NF)等。
三地址码是一种常用的中间代码形式,其特点是在一条指令中包含一个操作符和两个操作数。
这种格式的优点是易于生成、优化和执行。
例如,对于表达式a + b * c,其三地址码形式可以是ADD a,b * c。
树表达式也是一种常用的中间代码形式,其特点是语法树的每个节点表示一个操作符,每个节点可以有多个子节点。
这种格式的优点是易于表达复杂的表达式和语句。
例如,对于表达式a + b * c,其树表达式形式可以是(a + b)* c。
三范式是一种规范化的中间代码形式,其特点是每个操作符最多有三个操作数。
这种格式的优点是易于进行指令调度和并行化处理。
例如,对于表达式a + b * c,其三范式形式可以是ADD a,b,c和MUL b,c。
这些中间代码形式的优点各有不同,选择使用哪种格式取决于具体的编译器设计和优化需求。
ir常用编码格式 -回复
ir常用编码格式-回复IR常用编码格式是信息检索(Information Retrieval)过程中常用的一种数据编码方式,用于将原始文本数据转换为计算机可以处理的形式。
IR常用编码格式旨在实现文本的高效存储和快速检索,提供用户更好的搜索体验。
本文将详细介绍IR常用编码格式的定义、特点、以及常见的编码方式。
一、IR常用编码格式的定义IR常用编码格式是指一种将文本数据编码为计算机可以处理的格式的方式。
它是为了满足信息检索过程中的高效存储和快速检索而设计的,可以将原始的文本数据按照一定的规则进行压缩和转换,以便于计算机对其进行处理和分析。
二、IR常用编码格式的特点1. 高效存储:IR常用编码格式能够将原始文本数据进行压缩和优化,以达到节省存储空间的目的。
它可以将冗长的文本数据转换为紧凑的编码形式,使得存储空间的利用率得到提高。
2. 快速检索:IR常用编码格式能够将文本数据转换为计算机可以高效处理的形式,以便快速进行信息检索。
通过将文本数据进行编码和索引,可以提高搜索引擎的检索速度,帮助用户快速获取所需的信息。
3. 高度可定制:IR常用编码格式可以根据不同的需求进行定制和扩展。
它可以根据具体的应用场景进行优化,满足用户的个性化需求,并支持多种不同的编码方式和索引策略。
三、常见的IR编码方式1. 倒排索引编码(Inverted Index Encoding):倒排索引是IR中最常用的编码方式之一。
它将文本数据中的关键词进行提取和编码,并建立倒排索引表,记录关键词在文本中的位置和出现次数等信息。
通过倒排索引,可以快速定位包含特定关键词的文本数据。
2. 基于向量空间模型的编码(Vector Space Model Encoding):向量空间模型是一种将文本数据转换为向量形式的编码方式。
它将文本数据表示为高维空间中的向量,每个维度对应一个特征或词语,向量的数值表示该词语在文本中的重要性。
通过计算向量之间的相似度,可以进行文本的相似性匹配和相关性排序。
ABB Jokab Safety SSR32 安全传感器功能的安全传输器说明书
[DE] Die komplette Originalbetriebsanleitung ist zu finden unter:[IT] Le istruzioni originali complete si trovano qui:[FR] La notice originale intégrale est disponible sur:[ES] La versión original de las instrucciones está disponible en:/jokabsafetyABB ABJokab SafetyVarlabergsvägen 11 SE-434 39 Kungsbacka Tel. +46 (0) 21-32 50 /jokabsafetyProduct descriptionSSR32 is a safety relay that has single sensor functions for the most common applications and configuration possibilities for automatic and manual reset.The delay time, 0.5 s, effects the secondary output group, pair (33/34 and43/44). The primary output group, pair (13/14 and 23/24) is effected immediate-ly, following the safety input signal.InstallationWARNING: The product must be installed by a trained electrician following applicable safety regulations, standards and the machinedirective.CAUTION: The safety relay shall be attached on a 35 mm DIN railin an enclosure that has at least protection class IP54.CAUTION: Make sure there is at least 10 mm distance between the safety relay and other non-Sentry safety relay units to preventuncontrolled heating.CAUTION: Make sure there is at least 50 mm distance above and below the safety relay and other units for correct air flow in the venting holes of the safety relay.ConnectionWARNING: The safety relay and the sensor device for monitoring must be connected to SELV/PELV power supply.A)B)A. Two signals from T1/T2B. One signal from T1C. Two OSSD signalsD. Two signals from +24VDCE. One signal from +24VDC LED indicationCH1/MODE/CH2CommentActionoff/off/offThe safety relay is not powered.Check A1-A2 voltage and connections.green/green/greenCH1 and CH2 closed. Reset made and outputs activated.off/blue/off No channels closed.Check CH1 and CH2.green/blue/green CH1 and CH2 closed, the safety relay wait for reset.Check reset wiring and reset circuit.red/fast flash red/redThe safety relay is in failsafe mode.Do a power cycling.Technical dataMeasurements Height/width/depth 120 mm/22.5 mm/120 mmPower supply Power supply type PELV/SELVOperating voltage +24 VDC +15 %, -20 %Consumption 10 WRequired fuse4 A gG (4 A according to UL 248)Relay output specification Maximum operating switching voltage250 VAC Overvoltage category IINO contactAC load (AC15, AC1), ratedoperational voltage, current 1/2/3/4 contact(s)250 VAC, 3 A/3 A/3 A/3 A DC load (DC13, DC1), ratedoperational voltage, current 1/2/3/4 contact(s)+24 VDC, 3 A/3 A/3 A/3 ARequired fuse4 A gG, 1 kA short circuit protection (4 A according to UL248)Sensor interface specificationOutput T1 and T2Maximum output current (current limited internally to typical 70 mA)50mA, nom 24 VDCInput R1 and R2Maximum OSSD pulse length1.0 ms Input/output (I/O) X4Maximum output current (currently limited internally to typical 70 mA)50 mAConnection block and wire propertiesMaximum screw torque 0.8 NmSolid conductor, minimum 1 x 24 AWG (0.2 mm 2), 2 x 24 AWG (0.2 mm 2)Solid conductor, maximum1 x 12 AWG (3.31 mm 2), 2 x 16 AWG (1.31 mm 2)Conductor with crimp sleeve, minimum1 x 24 AWG (0.2 mm 2), 2 x 24 AWG (0.2 mm 2)Conductor with crimp sleeve, maximum1 x 12 AWG (3.31 mm 2), 2 x 16 AWG (1.31 mm 2)2TLC010010M0201 Rev BWhile every effort has been taken to ensure the accuracy of information contained in this book and any associated promotional and information material ABB JokabSafety cannot accept responsibility for errors or omissions and reserves the right to make any improvements without notice. It is the users responsibility to ensure that this equipment is correctly designed, specified, installed, cared for and operated to meet all applicable local, national and international codes/regulations. Technical data in our book is correct to the level of accuracy of ABB Jokab Safety´s test procedures as verified by various international approved bodies. Other information (such as application examples, wiring diagrams, operation or use) is intended solely to illustrate the various uses of our products. ABB Jokab Safety does not quarantee or imply that the product when used in accordance with such examples in a particular environment will fulfil any particular safety requirement and does not assume any responsibility or liability for actual use of the product based on the examples given.[DE] Die komplette Originalbetriebsanleitung ist zu finden unter:[IT] Le istruzioni originali complete si trovano qui:[FR] La notice originale intégrale est disponible sur:[ES] La versión original de las instrucciones está disponible en:/jokabsafetyWire strip length6-7 mmMaximum response time Delay at power on1.5 s Response time at activation automatic reset/manual reset 50 ms/50ms Response time at deactivation 20 ms Electrical operations life time Load Σlth² ≤ 13, AC1, AC1530 000 operations Load Σlth² ≤ 13, DC1, DC13100 000 operations Mechanical operations lifetime 107 operations Environmental data Protection class, safety relay IP20Protection class, enclosureAt least IP54Ambient temperature range foroperation within specified operation range-10°C – +65°C Humidity range for operation25 % ≤ Rh ≤ 90 %, non-condensing and without icingSuitable for use at ≤ 2000 metres above sea level.Standard compliance and approvals Functional safety standard complianceEN 61508-1:2010, up to SIL3 EN ISO 13849-1:2008, up to PLe/Cat.4EN 62061:2005, up to SILCL3 EN 61511-1:2003ApprovalsCE, TÜV SÜD, cULus Declaration of conformityCan be found at:/jokabsafety Information for use in USA/Canada Intended use Applications according to NFPA 79Power sourceA suitable isolating source in conjunction with a fuse in accordance with UL 248FuseThe fuse shall be rated max. 4 A and be installed in the +24 VDC power supply to the device in order to limit the available current.MaintenanceWARNING: The safety functions and mechanics shall be testedevery year to confirm that the safety functions work properly.WARNING: Repair and exchange of parts of the safety relay is not permitted since it may accidentally cause permanent damage to the product, imparing safety of the device which in turn could lead to serious injury to personnel. In case of breakdown or damage to the product contact ABB Jokab safety to replace the safety relay with a similar product.。
光谱仪“提速”6000倍
光谱仪“提速”6000倍
光谷
【期刊名称】《军民两用技术与产品》
【年(卷),期】2006(000)008
【摘要】复旦大学信息科学与工程学院研制的“二维CCD阵列探测器”光谱仪.可把传统光谱仪的效率提高6000倍,该项成果在国际上受到高度评价。
【总页数】1页(P30)
【作者】光谷
【作者单位】无
【正文语种】中文
【中图分类】TH744.1
【相关文献】
1.光谱仪『提速』6000倍 [J], 佚名
2.提速、提速、再提速——Lite-On 48倍速刻录机 [J],
3.提速、提速、再提速—Lite—ON 48倍速刻录机 [J], 姜筑
4.我国科学家为光谱仪“提速”6000倍 [J],
5.我国科学家为光谱仪“提速”6000倍 [J],
因版权原因,仅展示原文概要,查看原文内容请购买。
常见GPS接收器采用的GPS芯片种类方案
常见GPS接收器采用的GPS芯片种类常见GPS接收器采用的GPS芯片种类(1).SiRFstarIIe:a.LP:Lowpower,没有LP的已经很少用了。
Sensitivity:-145dBm,于定位后依然耗电,如HOLUXGM-210。
b.XtracV1:高感度f/w,Sensitivity高于starIIe/LP,硬件壹样。
如HOLUX270Uc.XtracV2:纠正了V1版本容易漂移的缺点,信号比较贴近现实,如HAICOM的303S、HOLUX231、MINIGPS(2).SiRFstarIII:Sensitivity:-159dBm(实测约为-154dBm),虽然内建correlator为220000颗,未必更耗电,因为制程从0.18u改成0.13u。
如HOLUX236、HAICOM新款的蓝牙GPS、环天338、丽台9553(3).SonysinglechipsolutionCXD2951:SONY第三代芯片,只有他们是RF跟baseband包于壹起的,Sensitivity:-152dBm。
(4).NemerixNJ1006(RF)+NJ1030(Baseband)Sensitivity:-147dBm,省电王,采用此芯片的GOPASSGPT-700,850AMH的锂电池均有20个小时的表现。
(5).Evermore:台湾本地的IC,性价比好,采用此芯片的HAICOM303E,性能表现优于HOLUX270U(6)RFMD:MicroDevices(RFMD)业界首个高集成度蓝牙/GPS解决方案——RF8900,该设计将蓝牙通信和GPS技术集成于壹个完整的系统中。
据称该产品和同类产品相比可减少20%的尺寸,且使成本降低25%,据传RIKALINE的6033将采用这个芯片(7).Garmin:牌子老,信用好。
老板台湾人,研发美国制造台湾,其老板也跻身世界500富豪行列。
如GARMIN的手持机GPS1.GPS芯片:目前国际上常用(常见到的/较流行的)GPS模块(OEM板)上的主芯片主要有3种。
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Features
•Load current feedback
•Programmable over current shutdown •Active clamp •E.S.D protection
•Input referenced to Vcc •Over temperatue shutdown •
Reverse battery protection
IR3312(S)
Data Sheet No.PD60211 rev.D
Description
The IR 3312(S) is a Fully Protected 4 terminal high side switch.The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified Vih threshold, the output
suitable for the automotive environment.
Typical Connection
PROGRAMMABLE CURRENT SENSING HIGH SIDE SWITCH
Product Summary
R ds(on)20m ΩV cc.op. 6 to 28V Current ratio 2800I shutdown 3 to 30A Active clamp 35V Load Dump 40V
1
IR3312(S)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (T
= 25o C unless otherwise specified).
1) Limited by junction temperature. Pulsed current is also limited by wiring 2) <500 Ohm or shorting Ifb to gnd may damage the part with Isd around 37A
3) >5000 Ohm or leaving Ifb open will shutdown the part. No current will flow in the load.
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
IR3312(S)
3
Switching Electrical Characteristics
V cc = 14V, Resistive Load = 0.4Ω, T j = 25o C, (unless otherwise specified).
current path and the input signal path can significantly affect the thresholds.
5) Rds(on) is measured between the Tab and the Out pin, 5mm away from the package.
Protection Characteristics
Tj = 25o C (unless otherwise specified), RIfb = 500 to 5kOhm.
Symbol
Parameter
Min.Typ.Max. Units Test Conditions
VIfb -Vin @ Isd Over-current shutdown threshold 4 4.5 5.4V Tsd Over-temp. shutdown threshold — 165 —°C see Fig. 7
Treset Protection reset time
—50300µS see Fig. 7OV Over voltage shutdown (not latched)333641V Isdf Fixed over current shutdown
303745A VIfb<Vin Isd_1k Adjustable over current shutdown 1K 91216A RIfb=1k Min.Pulse Minimum pulse width (no WAIT state)2005001200µs see Fig. 6
WAIT
WAIT function timer
0.5 1.2 3.5m s
see Figs. 6 and 7
Rev.Rds on Rds(on) reverse battery protection
10
16
28
m Ω Vcc-Vin=-12V, Iload=5A
Static Electrical Characteristics
o
IR3312(S)
4
Symbol Parameter
Min.
Typ.
Max. Units Test Condition s
Ratio
I load / IIfb current ratio
2,4002,8003,300—T j = 25o C ,Rfb = 500Ω,I = 30A
Ratio_TC Iload/Ifb variation over temperature -50+5%T j = -40 T 0 +150o C offset Load current diagnostic offset -0.4500.45A I = 2A
Trst Ifb response time (low signal)
—
5
15
µs
90% of the I load step
Current Sense Characteristics
IN
Ifb OUT
IR3312(S)
5
Figure 1 - Voltages and currents definitions Figure 2 - Switching time definitions (turn-on)
Vil Iin Iin Lead Assignments
IR3312(S)
Figure 3 - Switching time definitions (turn-off)Figure 4 - Active clamp waveforms
Figure 5 - Current sense precision:
Accurate measurement only when the power Mosfet is fully ON
Figure 6 - Minimum pulse & WAIT
function
Precise measurement
IR3312(S)
7
Figure 9- Rds on (m Ω) vs Vcc-Vin (V)
Figure 8 - Icc (mA) vs Vcc-Vin (V)
02468100
5
10
15
20
25
30
IR3312(S)
Figure 10 -Normalized Rdson (%) vs Tj (o C) Figure 11 - Vih, Vil & Vifb -Vin (V) vs Tj (o C)
Figure 12 - Error (+/-A) vs Iload (A)
Figure 13 - Isd (A) vs RIfb (Ohm)
0%20%40%60%80%100%120%140%160%180%200%-50-25
25
50
75100125150
0123456-50
-25
25
50
75
100125150
1 20
15 30
3
4 110
100
100
1000
10000
IR3312(S)
9
Figure 16 - I out (A) vs Protection resp. Time (s)
Figure 17 - Rth (o C/W) vs Time (s)
Figure 14 - Max. DC current (A) vs T emp. (°C)
Figure 15 - Max. I (A) vs inductance (mH)
110
100
1E-050.0001
0.001
0.01
0.1
1
10
100
1000
分销商库存信息:
IR
IR3312IR3312S IR3312STRL IR3312STRR。