cmos带隙基准源设计(最终稿)
合集下载
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
参考文献................................................................................................................... 38 致谢........................................................................................................................... 39
苏州大学本科生毕业设计（论文）
摘要 CMOS带隙基准源温度或电源电压的变化而变化。本文把CMOS带隙基准电压源当做研究对象，首先介绍了
带隙基准源目前国内外的研究状况，然后详细介绍它的工作原理和两种基本结构，并指出 本文考察的性能指标。在此基础上，用两种不同的电路结构实现带隙基准电压源的设计，
1.1 基准源简介...................................................................................................3 1.2 带隙基准源研究的历史与现状.................................................................. 3
第五章 结论与展望.................................................................................................37 5.1 两种电路的对比........................................................................................ 37 5.2 展望.............................................................................................................37
并用Cadence仿真工具基于GSMC 0.18μm 工艺下对其进行仿真和分析，并为第二个结
构制作了版图。
第一个带隙基准电压源基于Banba结构的设计思想，在-40ºC～75ºC的温度范围内， 温度系数约为37.19ppm/ºC，在0.000001Hz到1GHz频率范围内平均电源抑制比(PSRR) 可达到-62dB，启动时间为77.76ns。
苏州大学本科生毕业设计（论文）
目录 摘 要...........................................................................................................................1 Abstract...................................................................................................................... 2 第一章 绪论...............................................................................................................3
1.2.1 基准源设计历史................................................................................ 3 1.2.2 带隙基准源设计的研究现状............................................................. 4 1.3 本文的主要工作.......................................................................................... 4 第二章 带隙基准源的工作原理及其基本结构...................................................... 5 2.1 基本工作原理...............................................................................................5 2.1.1 与电源无关的偏置............................................................................ 5 2.1.2 与温度无关的基准源的实现............................................................ 6 2.2 电路的两种基本结构.................................................................................. 9 2.3 带隙基准源的性能指标............................................................................ 11 2.4 本文采用的两种基本结构的核心电路..................................................... 12 第三章 基于 Banba 结构的带隙基准电压源......................................................14 3.1 Banba 结构原理图................................................................................... 14 3.1.1 电路组成.......................................................................................... 14 3.1.2 电路结构特点.................................................................................. 15 3.1.3 电路结构具体分析.......................................................................... 15 3.2 Cadence 软件下的电路原理图及其仿真结果....................................... 19 3.3 本章小结.....................................................................................................26
苏州大学本科生毕业设计（论文）
第四章 基于 Cascode 电流镜无运放结构的带隙基准电压源.......................... 27 4.1 Cascode 结构原理图.................................................................................27 4.1.1 电路组成.......................................................................................... 27 4.1.2 电路结构的特点.............................................................................. 28 4.1.3 电路结构具体分析.......................................................................... 28 4.2 Cadence 软件下电路原理图及仿真结果............................................... 30 4.3 版图设计...................................................................................................34 4.3.1 本节内容概述.................................................................................. 34 4.3.2 版图的设计规则简介 .................................................................... 34 4.3.3 带隙基准源版图设计...................................................................... 35
1
苏州大学本科生毕业设计（论文）
Abstract CMOS bandgap reference occupies an important state among the integrated circuit, the output of the reference voltage or current reference will not change with the supply voltage or the temperature. For example, This paper mainly in a CMOS bandgap reference voltage source, introduces the development of domestic and foreign bandgap reference and the background of the research , and then reports the operating principle of it and the basic structure in detail, morever, it also reports its main performance parameters. On this basis, two different circuit structures are applied to achieve bandgap voltage reference design and simulation,while using Cadence tools under its basic GSMC 0.18um to finish the layout for the second structure. The first bandgap reference voltage source is designed on basis of banba structure,based on GSMC 0.18um process simulation，the results show temperature coefficient as low as 37.19 ppm/ºC over a temperature range of 115ºC(-40ºC to 75℃),the power supply rejection ratio (PSRR) is up to -62dB in the frequency range of 0.000001Hz to 1GHz and the start time is 77.76ns. The second one is designed on basis of cascode structure,based on GSMC 0.18um process simulation ， the results show temperature coefficient as low as 3.805 ppm/ºC over a temperature range of 105ºC(-30ºC to 75℃),the power supply rejection ratio (PSRR) is up to -42dB in the frequency range of 0.000001Hz to 1GHz and the start time is 33.04ns.
第二个带隙基准电压源基于Cascode电流镜结构的设计思想，在-40ºC～70ºC的温 度范围内，温度系数约为3.805ppm/ºC，在0.000001Hz到1GHz频率范围内平均电源抑 制比(PSRR)可达到-42dB，启动时间为30.04ns。
关键词: 温度系数；CMOS带隙基准源；电源抑制比；
苏州大学本科生毕业设计（论文）
摘要 CMOS带隙基准源温度或电源电压的变化而变化。本文把CMOS带隙基准电压源当做研究对象，首先介绍了
带隙基准源目前国内外的研究状况，然后详细介绍它的工作原理和两种基本结构，并指出 本文考察的性能指标。在此基础上，用两种不同的电路结构实现带隙基准电压源的设计，
1.1 基准源简介...................................................................................................3 1.2 带隙基准源研究的历史与现状.................................................................. 3
第五章 结论与展望.................................................................................................37 5.1 两种电路的对比........................................................................................ 37 5.2 展望.............................................................................................................37
并用Cadence仿真工具基于GSMC 0.18μm 工艺下对其进行仿真和分析，并为第二个结
构制作了版图。
第一个带隙基准电压源基于Banba结构的设计思想，在-40ºC～75ºC的温度范围内， 温度系数约为37.19ppm/ºC，在0.000001Hz到1GHz频率范围内平均电源抑制比(PSRR) 可达到-62dB，启动时间为77.76ns。
苏州大学本科生毕业设计（论文）
目录 摘 要...........................................................................................................................1 Abstract...................................................................................................................... 2 第一章 绪论...............................................................................................................3
1.2.1 基准源设计历史................................................................................ 3 1.2.2 带隙基准源设计的研究现状............................................................. 4 1.3 本文的主要工作.......................................................................................... 4 第二章 带隙基准源的工作原理及其基本结构...................................................... 5 2.1 基本工作原理...............................................................................................5 2.1.1 与电源无关的偏置............................................................................ 5 2.1.2 与温度无关的基准源的实现............................................................ 6 2.2 电路的两种基本结构.................................................................................. 9 2.3 带隙基准源的性能指标............................................................................ 11 2.4 本文采用的两种基本结构的核心电路..................................................... 12 第三章 基于 Banba 结构的带隙基准电压源......................................................14 3.1 Banba 结构原理图................................................................................... 14 3.1.1 电路组成.......................................................................................... 14 3.1.2 电路结构特点.................................................................................. 15 3.1.3 电路结构具体分析.......................................................................... 15 3.2 Cadence 软件下的电路原理图及其仿真结果....................................... 19 3.3 本章小结.....................................................................................................26
苏州大学本科生毕业设计（论文）
第四章 基于 Cascode 电流镜无运放结构的带隙基准电压源.......................... 27 4.1 Cascode 结构原理图.................................................................................27 4.1.1 电路组成.......................................................................................... 27 4.1.2 电路结构的特点.............................................................................. 28 4.1.3 电路结构具体分析.......................................................................... 28 4.2 Cadence 软件下电路原理图及仿真结果............................................... 30 4.3 版图设计...................................................................................................34 4.3.1 本节内容概述.................................................................................. 34 4.3.2 版图的设计规则简介 .................................................................... 34 4.3.3 带隙基准源版图设计...................................................................... 35
1
苏州大学本科生毕业设计（论文）
Abstract CMOS bandgap reference occupies an important state among the integrated circuit, the output of the reference voltage or current reference will not change with the supply voltage or the temperature. For example, This paper mainly in a CMOS bandgap reference voltage source, introduces the development of domestic and foreign bandgap reference and the background of the research , and then reports the operating principle of it and the basic structure in detail, morever, it also reports its main performance parameters. On this basis, two different circuit structures are applied to achieve bandgap voltage reference design and simulation,while using Cadence tools under its basic GSMC 0.18um to finish the layout for the second structure. The first bandgap reference voltage source is designed on basis of banba structure,based on GSMC 0.18um process simulation，the results show temperature coefficient as low as 37.19 ppm/ºC over a temperature range of 115ºC(-40ºC to 75℃),the power supply rejection ratio (PSRR) is up to -62dB in the frequency range of 0.000001Hz to 1GHz and the start time is 77.76ns. The second one is designed on basis of cascode structure,based on GSMC 0.18um process simulation ， the results show temperature coefficient as low as 3.805 ppm/ºC over a temperature range of 105ºC(-30ºC to 75℃),the power supply rejection ratio (PSRR) is up to -42dB in the frequency range of 0.000001Hz to 1GHz and the start time is 33.04ns.
第二个带隙基准电压源基于Cascode电流镜结构的设计思想，在-40ºC～70ºC的温 度范围内，温度系数约为3.805ppm/ºC，在0.000001Hz到1GHz频率范围内平均电源抑 制比(PSRR)可达到-42dB，启动时间为30.04ns。
关键词: 温度系数；CMOS带隙基准源；电源抑制比；