IRF8736TRPBF;IRF8736PBF;中文规格书,Datasheet资料
IRFTS9342TRPBF;中文规格书,Datasheet资料
IRFTS9342PbFHEXFET ® Power MOSFETNotes through are on page 2Applicationsl Battery operated DC motor inverter MOSFET lSystem/Load SwitchFeatures and Benefitsresults in ⇒PD - 96411AIRFTS9342PbFNotes:Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%.When mounted on 1 inch square copper board.Static @ T = 25°C (unless otherwise specified)IRFTS9342PbFFig 4. Normalized On-Resistance vs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output CharacteristicsFig 6. Typical Gate Charge vs.Gate-to-Source VoltageFig 5. Typical Capacitance vs.Drain-to-Source Voltage T J , Junction Temperature (°C)R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e 110100-V DS , Drain-to-Source Voltage (V)10100100010000C , C a p a c i t a n c e (p F )0246810121416Q G Total Gate Charge (nC)0.02.04.06.08.010.012.014.0-V G S , G a t e -t o -S o u r c e V o l t a g e (V )DS -V DS , Drain-to-Source Voltage (V)0.1110100-I D , D r a i n -t o -S o u r c e C u r r e n t (A )IRFTS9342PbFFig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig 8. Maximum Safe Operating AreaFig 9. Maximum Drain Current vs.Case TemperatureFig 7. Typical Source-Drain Diode Forward VoltageFig 10. Threshold Voltage vs. Temperature255075100125150T A , Ambient Temperature (°C)0123456-I D , D r a i n C u r r e n t (A)0.010.1110100V DS , Drain-to-Source Voltage (V)0.010.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A)0.1110100-I S D , R e v e r s e D r a i n C u r r e n t (A )T J , Temperature ( °C )-V G S (t h ), G a t e t h r e s h o l d V o l t a g e (V )IRFTS9342PbFFig 12. On-Resistance vs. Gate VoltageFig 14. Maximum Avalanche Energy vs. Drain Current Fig 15. Typical Power vs. Time* Reverse Polarity of D.U.T for P-Channel* V GS = 5V for Logic Level Devices®2468101214161820-V GS, Gate -to -Source Voltage (V)255075100125150Starting T J , Junction Temperature (°C)020406080100120E A S , S i n g l e P u l s e A v a l a n c h e E n e r g y (m J )Time (sec)P o w e r (W )IRFTS9342PbFFig 17a. Gate Charge Test CircuitFig 17b. Gate Charge WaveformFig 18b. Unclamped Inductive WaveformsFig 18a. Unclamped Inductive Test CircuitFig 19b. Switching Time WaveformsFig 19a. Switching Time Test CircuitIdQgs1Qgs2Qgd QgodrV DDR DV DDI ASV DSV GSt t t tNote: For the most current drawing please refer to IR website at: /package/WW = (27-52) IF PRECEDED BY A LETTERYEA R Y Z52W WORK WEEK 26ZF = IRF5801(a s show n here) indica tes Lead-F ree.Note: A line above the w ork w eek G = IRF5803D = IRF5851E = IRF5852I = IRF 5805C = IRF5850N = IRF 5802K = IRF5810J = IRF5806H = IRF 5804S = Not a pplicable R = IRFTS 9342TRPBF T = IRLT S2242TRPBFIRFTS9342PbFTSOP-6 Tape and Reel Information† Qualification standards can be found at International Rectifier’s web site /product-info/reliability†† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: /whoto-call/salesrep/†††Applicable version of JEDEC standard at the time of product release.IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information . 02/2012Data and specifications subject to change without notice.8mmFEED DIRECTION4mmNOTES :1. OUTLINE CONFORMS TO EIA-481 & EIA-541.9.90 ( .390 )8.40 ( .331 )178.00( 7.008 ) MAX.NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.Qualification information †分销商库存信息: IRIRFTS9342TRPBF。
IRGP4086PBF;中文规格书,Datasheet资料
tf
Fall time
td(on)
Turn-On delay time
tr
Rise time
— 65 —
— 30 —
IC = 25A, VCC = 196V
— 33 — ns RG = 10Ω, L=200μH, LS= 200nH
td(off) tf tst
EPULSE
Turn-Off delay time Fall time Shoot Through Blocking Time
2
/
240
VGE = 18V
200
VGE = 15V
VGE = 12V
160
VGE = 10V VGE = 8.0V
120
VGE = 6.0V
ICE (A)
80
40
0
0
4
8
12
16
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
––– 29 ––– ––– 65 ––– ––– 22 ––– — 36 — — 31 — — 112 —
S VCE = 25V, ICE = 25A nC VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight
IRF8721TRPBF;IRF8721PBF;中文规格书,Datasheet资料
107/30/07IRF8721PbFHEXFET ®Power MOSFETBenefitsl Very Low Gate Charge l Low R DS(on) at 4.5V V GS l Low Gate Impedancel Fully Characterized Avalanche Voltage and Currentl 20V V GS Max. Gate Rating l Lead-Free Applicationsl Control MOSFET of Sync-BuckConverters used for Notebook Processor Powerl Control MOSFET for Isolated DC-DC Converters in Networking Systems SO-8PD - 97119DescriptionThe IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.IRF8721PbFStatic @ T = 25°C (unless otherwise specified)IRF8721PbF 3Fig 4. Normalized On-ResistanceVs. TemperatureFig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer CharacteristicsV DS , Drain-to-Source Voltage (V)T J , Junction Temperature (°C)R D S (o n ) , D r a i n -t o -S o u r c e O n R e s i s t a n c e(N o r m a l i z e d )V GS , Gate-to-Source Voltage (V)V DS , Drain-to-Source Voltage (V)IRF8721PbFFig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Vs.Gate-to-Source VoltageFig 5. Typical Capacitance Vs.Drain-to-Source VoltageFig 7. Typical Source-Drain DiodeForward Voltage110100V DS , Drain-to-Source Voltage (V)100100010000C , C a p a c i t a n c e (p F )0.11101001000I S D , R e v e r s e D r a i n C u r r e n t (A )0.1110100V DS , Drain-to-Source Voltage (V)0.11101001000I D , D r a i n -t o -S o u r c e C u r r e n t (A)510152025Q g , Total Gate Charge (nC)0481216V G S , G a t e -t o -S o u r c e V o l t a g e (V )IRF8721PbF 5Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-AmbientFig 9. Maximum Drain Current Vs.Case TemperatureFig 10. Threshold Voltage Vs. Temperature255075100125150T A , Ambient Temperature (°C)0481216I D , D r a i n C u r r e n t (A)T J , Temperature ( °C )V G S (t h ) G a t e t h r e s h o l d V o l t a g e (V )t 1, Rectangular Pulse Duration (sec)T h e r m a l R e s p o n s e ( Z t h J A )Fig 13. Maximum Avalanche Energyvs. Drain CurrentFig 12. On-Resistance vs. Gate VoltageFig 15b. Switching Time WaveformsFig 14b. Unclamped Inductive WaveformsFig 14a. Unclamped Inductive Test CircuitI ASFig 15a. Switching Time Test Circuit6810121416R D S (o n ), D r a i n -t o-S o u r c e O n R e s i s t a n c e (m Ω)V DDStarting T J , Junction Temperature (°C)V V d(on)rd(off)fV DDIRF8721PbF7DSCurrent Sampling ResistorsFig 16a. Gate Charge Test CircuitFig 16b. Gate Charge WaveformFig 17. Peak Diode Recovery dv/dt Test Circuit for N-ChannelHEXFET ® Power MOSFETs* V GS = 5V for Logic Level DevicesIdQgs1Qgs2Qgd QgodrIRF8721PbFSO-8 Package OutlineDimensions are shown in milimeters (inches)IRF8721PbF 9Notes:Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25°C, L = 1.09mH, R G = 25Ω, I AS = 11A. Pulse width ≤ 400μs; duty cycle ≤ 2%.When mounted on 1 inch square copper board. R θ is measured at T J of approximately 90°C.Data and specifications subject to change without notice.This product has been designed and qualified for the Consumer market.Qualification Standards can be found on IR’s Web site.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .07/2007Note: For the most current drawing please refer to IR website at /package/330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.FEED DIRECTIONTERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541.SO-8 Tape and ReelDimensions are shown in milimeters (inches)分销商库存信息:IRIRF8721TRPBF IRF8721PBF。
8730精密线材测试机中文使用手册 (2)
II.2 系統設定 (SETUP) .........................................................................................................................15
II.2.A 機台編號 .........................................................................................................................................16
II.2.D 測試警報 .........................................................................................................................................17
II.1.H 絕緣校正 .........................................................................................................................................14
II.1.I 直流高壓校正 .................................................................................................................................14
II.1.J 交流高壓校正 .................................................................................................................................15
IRF7416TRPBF;IRF7416PBF;中文规格书,Datasheet资料
IRF7416PbFHEXFET ® Power MOSFETl Generation V Technology l Ultra Low On-Resistance l P-Channel Mosfet l Surface Mountl Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching lLead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase,infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mountapplication.06/29/11 1V DSS = -30V R DS(on) = 0.02ΩSO-8PD - 95137AIRF7416PbFNotes:Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )I SD ≤ -5.6A, di/dt ≤ 100A/µs, V DD ≤ V (BR)DSS ,T J ≤ 150°CStarting T J = 25°C, L = 25mH R G = 25Ω, I AS = -5.6A. (See Figure 12)Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec.IRF7416PbF 3Fig 4. Normalized On-ResistanceVs. TemperatureFig 1. Typical Output Characteristics Fig 2. Typical Output CharacteristicsFig 3. Typical Transfer Characteristics1101000.1110DDS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)1101000.1110DDS-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Drain-to-Source Voltage (V)1101003.03.54.04.55.05.5GS D-I , D r a i n -t o -S o u r c e C u r r e n t (A )-V , Gate-to-Source Voltage (V)0.00.51.01.52.0-60-40-2020406080100120140160JT , Junction Temperature (°C)R , D r ai n -t o -S o u r c e O n R e s i s t a n c e D S (o n)(N o r m a l i z e d )IRF7416PbFFig 7. Typical Source-Drain DiodeForward VoltageFig 5. Typical Capacitance Vs.Drain-to-Source VoltageFig 6. Typical Gate Charge Vs.Gate-to-Source Voltage01000200030004000110100C , C a p a c i t a n c e (p F )DSV , Drain-to-Source Voltage (V)04812162020406080100GGS -V , G a t e -t o -S o u r c e V o l t a g e (V )Q , Total Gate Charge (nC)1101000.40.60.81.01.2SDS D -V , Source-to-Drain Voltage (V)-I , R e v e r s e D r a i n C u r r e n t (A )IRF7416PbF 5Fig 10a. Switching Time Test CircuitFig 10b. Switching Time WaveformsFig 9a. Basic Gate Charge WaveformFig 9b. Gate Charge Test CircuitV DDDSCurrent Sampling Resistors-10VChargeV DSV t t t tIRF7416PbFVs. Drain CurrentFig 12b. Unclamped Inductive WaveformsFig 12a. Unclamped Inductive Test CircuitI ASV DDIRF7416PbF 7V DD* Reverse Polarity for P-Channel** Use P-Channel Driver for P-Channel Measurements*V GS *Peak Diode Recovery dv/dt Test Circuit*** V GS = 5.0V for Logic Level and 3V Drive DevicesFig 13. For P-Channel HEXFETSIRF7416PbFSO-8 Package OutlineIRF7416PbF 9Data and specifications subject to change without notice.This product has been designed and qualified for the Consumer market.Qualifications Standards can be found on IR’s Web site.330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-541.FEED DIRECTIONTERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )NOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-541.SO-8 Tape and ReelDimensions are shown in millimeters (inches)IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information . 06/2011分销商库存信息:IRIRF7416TRPBF IRF7416PBF。
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深圳市明烽威电子有限公司IRF1902TRPBF IR UM6558STIRF2804PBF P IR US207500CT STIR2804S IR V40100PG-E3/45VISHAY IR2804STRLPBF IR VIPER12A STIR2805PBF P IR VIPER22A STIR2805STRR IR12CWQ03FN IRIR2805STRPBF IR VS-12CWQ06FNTRPBF VISHAY IR2807LPBF IR VS-20CTQ150PBF VISHAY IRF2807PBF C IR VS-48CTQ060PBF VISHAY IRF2807STRPBF IR VS-50WQ03FNTRPBF VISHAY IRF2907ZPBF P IR VS-60APU02PBF VISHAY IRF3007PBF IR VS-60APU04PBF VISHAY IRF3205PBF C IR VS-60APU06PBF VISHAY IRF3205STRPBF IR VS-60EPU06PBF VISHAY IRF3205ZPBF C IR VS-IRFB9N60APBF VISHAY IRF3315PBF M IR WFU1N60WISDON IRF3315STRLPBF IR BU406FSCIRF3415PBF IR FFPF30UA60STU FSCIRF3415STRL IR FQP44N10FSCIRF3703PBF M IR IRG4IBC20KD +04IRIRF3704IR STPS4045CW STIRF3707ZCSTRRPBF IR UC2845BN ONIRF3710PBF C IR UC2845B ONIRF3710PBF P IR UC3844BD1R2G ONIRF3710SPBF IR SB10100FCT强茂IRF3710STRLPBF IR SB1060强茂IRF3710ZPBF IR SB20100CT强茂IRF3711STRPBF IR SB1660F强茂IRF3805PBF P IR MBR20100FCT强茂IRF3808PBF IR ER806FIRF4104PBF IR ER803IRF4905L M IR 04+TK10A60D TOSHIBA IRF4905PBF C IR TK12A50TOSHIBA IRF4905PBF P IR TK5A50D TOSHIBA IRF4905STRLPBF IR MX2SK3562TOSHIBA IRF510PBF C IR2SK3568TOSHIBA IRF520ST2SK3561TOSHIBA IRF520NPBF P /M IR2SK3067TOSHIBA IRF520PBF P IR2SK2608TOSHIBA IRF5210PBF P IR2SK2225瑞萨IRF5210STRLPBF IR MX2SK2225瑞萨IRF5305PBF C IR2SK2996TOSHIBA IRF5305PBF M IR FJ13009TH FSCIRF5305S IR FJP13009-2FSCIRF5305STRPBF IR BTA41-600B STIRF530NPBF M IR BTA06-600C STIRF530NSPBF IR BTA16-600B STIRF530NSTRL IR BTA24-800B STIRF530NSTRLPBF IR BTA26-600B STIRF530PBF C IR HFA08SD60STRPBF VISHAY IRF530 M IR SSH70N10A FSCIRF540NPBF M IR FFA60UP30DNTU FSCIRF540NPBF C粉IR STPS40L15CTD STIRF540NSTRLPBF IR RURG8060FSCIRF540PBF C IR IKW75N60T INFINEON IRF540ZPBF M IR IKW25T120(25N120)INFINEON IRF5852TRPBF C IR IKW20N60T INFINEON IRF6100PBF IR IKW40N120T2INFINEON IRF6217TRPBF IR IKW40T120INFIRF610A FSC IKW40N120H3INFINEON IRF610 M IR RJH60F7ADPK RENESAN IRF620三星FCP16N60FSCIRF620B FSC IRF8734TRPBF IR 09+ IRF620PBF C VIS SPB17N80C3INF 10+ IRF6216TRPBF IR IRF7468TRPBF IRIRF624PBF IR IRF7458TRPBF IRIRF630NPBF M IR IRF7380TRPBF IRIRF630NSTRPBF IR TLP621TOSHIBA IRF630PBF C IR STF30NM60ND STIRF630STRR IR IRFS3607PBF IR 10+ IRLR8743TRPBF IR IRF7501PBF IR 07+ IRF634IR IRGPS60B120KD IRIRF634PBF VIS FFA30U60DN FSCIRF640NPFB C IR43CTQ100S IR 03+ IRF640NPBF M IR L6599AD STIRF640NSTRLPBF IR IDW100E60INFIRF640PBF C IR FQA13N80FSCIRF644NPBF IR STPS30L60CT STIRF644PBF C VIS STGW39NC60VD STIRF6623TRPBF IR NCP1252ADR2G SMDIRF7101TRPBF IR FAN7554FSCIRF7457TRPBF IR SPW24N60C3INFIRF7103Q IR IRFR2307ZTRLPBF IRIRF7103TRPBF IR IRLR8103VTR IRIRF7104TRPBF IR IRFR3505TRPBF IRIRF7105TR IR FQA11N90C FSCIRF7105TRPBF IR FDPF10N60NZ FSCIRF710PBF C VIS FDPF7N60NZ FSC IRF7201TR IR TYN612MRG ST C IRF7204TRPBF IR L6598D ST IRF7201TRPBF IR IR2301STR IR IRF7205TRPBF IR IPW90R1K0C3INF-C IRF720PBF C IR IRF7807VD1IR IRF7220TR IR IRF7807ZTRPBF IR-P IRF7220TRPBF IR IRF7807VD1TRPBF IR IRF7240TRPBF IR IRF7809A IR IRF7241TRPBF IR IRF7811AVTR IR IRF7303TRPBF IR IRF7811AVTRPBF IR IRF7319TRPBF IR IRF7811WTRPBF IR IRF7304IR IRF7821TRPBF IR IRF7304TRPBF IR IRF7822TR IR IRF7306TR IR IRF7822TRPBF IR IRF7306TRPBF IR IRF7823TRPBF IR IRF7309TRPBF IR IRF7828TRPBF IR IRF7210TRPBF IR IRF7832TRPBF IR IRF730PBF C IR IRF7832UTRPBF IR IRF730BPBF VIS IRF7832ZTRPBF IR 09 IRF7311TR IR IRF7842TRPBF IR IRF7311TRPBF IR IRF7862PBF IR IRF7313IR IRF7910TRPBF IR IRF7313TRPBF IR-P IRF8010PBF P IR IRF7314TR IR IRF8010STRLPBF IR IRF7314TRPBF IR IRF8010STRR IR IRF7316TRPBF IR IRF820ST IRF7324TRPBF IR-P IRF820PBF C VIS IRF7328TRPBF IR IRF830APBF C VIS IRF7329IR IRF830B FSC IRF7329TRPBF IR-P IRF830PBF 粉VIS IRF7335D1TRPBF IR IRF830PBF C VIS IRF7338TRPBF IR IRF830SPBF VIS IRF7341QTRPBF IR IRF840APBF M IR IRF7341TRPBF IR IRF840APBF C VIS IRF7342TRPBF IR IRF840STRPBF VIS IRF7343TRPBF IR IRF840ASPBF VIS IRF7353D2PBF IR IRF840ASTRPBF VIS IRF7379PBF IR IRF840A C IR IRF7379TRPBF IR IRF840LCPBF IR IRF7389TR IR IRF840PBF C VIS IRF7389TRPBF IR IRF8707GTRPBF IR IRF7401TRPBF IR IRF8707TRPBF IR IRF7402TR IR IRF8721PBF IRIRF7403TRPBF IR IRF8736TRPBF IR IRF7404TRPBF IR IRF9510PBF C IR IRF7406PBF IR IRF9520NPBF P IR IRF7406TRPBF IR IRF9520NPBF M IR IRF740PBF C VIS IRF9520NSTRL IR 05+ IRF740SPBF IR IRF9530NPBF 粉P IR IRF7410TRPBF IR IRF9530NPBF M IR IRF7413TR IR IRF9530NSTRLPBF IR-MX IRF7413TRPBF IR IRF9520PBF VIS IRF7415TRPBF IR IRF9530PBF C IR IRF7416TRPBF IR IRF9530STRLPBF VIS IRF7424TRPBF IR IRF9540NPBF C IR IRF7425TRPBF IR IRF9540NPBF M IR IRF7450TRPBF IR IRF9540NSTRRPBF IR IRF7451TRPBF IR IRF9540STRLPBF VIS IRF7452TRPBF IR IRF9640STRPBF VIS IRF7455IR IRF9540PBF C VIS IRF7456TRPBF IR IRF9620FSC IRF7459TRPBF IR IRF9620PBF VIS IRF7460TRPBF IR IRF9630PBF C VIS IRF7467TRPBF IR IRF9640PBF C VIS IRF7469TRPBF IR IRF9952TR IR IRF7476TRPBF IR IRF9952TRPBF IR IRF7492TRPBF IR IRF9953TRPBF IR IRF7493TRPBF IR IRF9Z24NPBF M IR IRF7494TRPBF IR IRF9Z24NPBF 韩IR IRF7495TRPBF IR IRF9Z24SPBF VIS IRF7503TRPBF IR IRF9Z34NPBF M IR IRF7506TRPBF IR IRF9Z34NSPBF IR IRF7509TRPBF IR IRF9Z34NSTRPBF IR IRF7530TR IR IRFB11N50APBF C VIS IRF7604PBF IR IRFB13N50APBF M IR IRF7606TR IR IRFB18N50KPBF IR IRF7707IR IRFB20N50KPBF VIS IRF7751TRPBF IR IRFB23N15DPBF P IR IRF7805IR IRFB23N20DPBF IR IRF7805QPBF IR IRFB260NPBF M IR IRF7853TRPBF 10+IR IRFB3077PBF IR IRF7805ZGTRPBF IR IRFB31N20DPBF C IR粉IRF7805ZTRPBF IR IRFB3206PBF P IR IRFRC20TRLPBF IR IRFB3207PBF P IR IRFS23N20DPBF IR IRFB3207ZPBF C IR IRFS4229PBF IR IRFB3306GPBF IR IRFS4310ZPBF IR IRFS3306PBF IRIRFS4310TRLPBF IR IRFB3306PBF P IR IRFS4410PBF IR-CHH IRFB3307ZPBF IR IRFS4410ZPBF IR-CHH IRFB3307PBF IR IRFS4321TRLPBF IR IRFB33N15DPBF M IR IRFS4610TPBF IR IRFB3507PBF M IR IRFS52N15DTRLPBF M IR IRFB3607PBF M IR IRFS830B FSC IRFB3806PBF IR IRFS9630三星IRFB38N20DPBF M IR IRFU024NPBF IR IRFB4019PBF M IR IRFU110PBF IR IRFB4020PBF P IR IRFU120NPBF IR IRFB4110GPBF IR IRFU120PBF VIS IRFB4110PBF M IR IRFU210PBF IR IRFB4115GPBF IR IRFU214PBF IR IRFB4115PBF IR IRFU220NPBF IR IRFB41N15DPBF IR IRFU220PBF C VIS IRFB4212PBF IR IRFU310PBF IR IRFB4227PBF C IR IRFU420APBF VIS IRFB4229PBF C IR IRFU420PBF VIS IRFB42N20DPBF M IR IRFU430APBF VIS IRFB4310PBF C IR IRFU5305PBF IR IRFB4310ZPBF P IR IRFU5410PBF M IR IRFB4321GPBF IR IRFU5505PBF IR IRFB4321PBF C IR IRFU9014PBF VIS IRFB4332PBF M IR IRFU9024NPBF IR IRFB4410PBF IR IRFU9120NPBF IR IRFB4410PBF M IR IRFU9310PBF VIS IRFB4410ZPBF P IR IRFU9024NPBF IR IRFB4610PBF M IR IRFU9120NPBF IR IRFB4710PBF P IR IRFZ24NPBF C IR IRFB52N15DPBF M IR IRFZ24VPBF 韩IR IRFB59N10PBF M IR IRFZ34NPBF M IR IRFB61N15DPBF IR IRFZ44NSTRPBF IR IRFB9N65APBF IR IRFZ44NPBF 粉C IR IRFBC20PBF C VIS IRFZ44NPBF M IR IRFBC30PBF C VIS IRFZ44ZPBF IR IRFBC40APBF VIS IRFZ44VPBF C IR IRFBC40PBF C VIS IRFZ44VSTRRPBF IR IRFBE20PBF C VIS IRFZ46NPBF M IR IRFBE30PBF C VIS IRFZ48NPBF C IR IRFBF30PBF C VIS IRFZ48NPBF M IR IRFBG20PBF C VIS IRFZ48VPBF IR IRFBG30PBF C VIS IRFG4BC20FD-STRL IR IRFC4233B IR IRG4BC20KPBF IR IRFD110PBF IRIRG4BC20UDPBF M IR IRFD120PBF VIS IRG4BC20WPBF M IR IRFD220PBF IR IRG4BC30F IR IRFD320PBF IR IRG4BC30KDPBF IR IRFD9110PBF IR IG4BC30KD-SPBF IR IRFD9120PBF VIS IRG4BC30UDPBF IR IRFI4229PBF IR IRG4BC40U IR IRFI530N IR IRG4IBC30S IR IRFI720GPBF IR IRG4PC20UPBF IR IRFI730G IR IRG4PC30FPBF M IR IRFI820GPBF VIS IRG4PC30KPBF IR IRFI840G IR IRFP37N50APBF VIS IRFI9520GPBF IR 4PC30UDPBF IR IRFI9630GPBF IR IRG4PC40FD IR IRFIBC20GPBF IR IRG4PC40FDPBF M IR IRFIBC30G IR IRG4PC40KDPBF IR IRFIBF30G IR IRG4PC40KPBF IR IRFIZ34N IR IRG4PC40SPBF IR IRFIZ34VPBF IR IRG4PC40UDPBF IR IRFIZ48N IR IRG4PC40UD-2PBF IR IRFIZ48V IR IRG4PC40UPBF M IR IRFL014NTRPBF IR IRG4PC40WPBF M IR IRFL024NTRPBF IR IRG4PC50FD-EPBF IR IRFL024ZTRPBF IR IRG4PC50FDPBF M IR IRFL110TRPBF VIS IRG4PC50FPBF IR IRFL210TRPBF IR IRG4PC50K IR IRFL4105IR IRG4PC50KD IR IRFL4310TRPBF IR IRG4PC50UDPBF M IR IRFL9014TRPBF VIS IRG4PC50UPBF IR IRFL9110TRPBF IR IRG4PC50WPBF M IR IRFP044N IR IRG4PF50WD-LF44IR IRFP044NPBF M IR IRG4PF50WDPBF M IR IRFP048NPBF IR IRG4PF50WPBF IR IRFP054NPBF M IR IRG4PH30KD IR IRFP064NPBF M IR IRG4PH30KDPBF IR IRFP1405PBF M IR IRG4PH30KPBF M IR IRFP140NPBF M IR IRG4PH40UD IR IRFP140PBF C VIS IRG4PH40UD2-EP IR IRFP150MPBF C IR IRG4PH50K IR IRFP150NPBF M IR IRG4PH50KDPBF IR IRFP150NPBF C IR IRG4PH50S IR IRFP150PBF C VIS IRG4PH50SPBF IR IRFP2907PBF IR IRG4PH50UDPBF M IR IRFP22N50APBF C VIS IRG4PH50UPBF IR IRFP22N60C3IRIRG4PSC71KPBF IR IRFP22N60KPBF C VIS IRG4PSH71KD IR IRFP23N50LPBF VIS IRG4PSH71KPBF IR IRFP240PBF VIS IRG4PSH71UPBF IR IRFP244PBF M IR IRG4PS71UPBF IR IRFP250MPBF IR IRG4RC10SD IR IRFP250NPBF M IR IRG4RC20F IR IRFP250NPBF C IR IRG7PH35UD1PBF IR IRFP254PBF VIS IRG7PH35UPBF IR IRFP260MPBF IR IRG7PH42UD1-EP IR IRFP260NPBF M IR IRGB15B60KDPBF IR IRFP260NPBF C IR IRGB20B60PD1PBF M IR IRFP264PBF C IR IRGB20B60PDPBF IR IRFP26N60LPBF VIS IRGB4056D IR IRFP27N60KPBF VIS IRGB4086PBF IR IRFP31N50LPBF IR IRGB6B60KPBF IR IRFP3206PBF M IR IRGB8B60K IR IRFP32N50KPBF IR IRGI4045DPBF IR IRFP340PBF IR IRGI4056DPBF IR IRFP3415PBF M IR IRGI4061DPBF M IR IRFP350PBF IR IRGI4086PBF IR IRFP360LCPBF C VIS IRGIB10B60KD1PBF C IR IRFP360PBF C VIS IRGIB15B60KD1PBF IR IRFP3703PBF IR IRGP4062DPBF IR IRFP3710PBF IR IRGP20B60PDPBF IR IRFP4004PBF M IR IRGP35B60PDPBF M IR IRFP4110PBF C IR IRGP4063DPBF M IR IRFP4227PBF IR IRGP4068DPBF IR IRFP4228PBF IR IRGP4072DPBF IR IRFP4229PBF IR IRGP4086IT IRFP4232PBF IR IRGP50B60PD1PBF IR IRFP4233国产IRGP50B60PDPBF IR IRFP4242PBF M IR IRGPS40B120UDPBF IR IRFP4310ZPBF IR IRGPS40B120UPBF IR IRFP4321PBF IR IRGPS60B120KD IR IRFP4332PBF IRIRL2203NPBF IR IRFP4368PBF IRIRL2703PBF M IR IRFP4468PBF M IRIRL2703PBF C IR IRFP448IRIRL3103PBF C IR IRFP450APBF IRIRL3103STRR IR IRFP450LCPBF C VIS IRL3103S M IR IRFP450PBF C VIS-粉IRL3303 M IR IRFP4568PBF IR 粉IRL3705NPBF C IR IRFP460APBF C VIS IRL3705NS IR IRFP460LCPBF C VISIRL3705NSTRLPBF IR IRFP460PBF C 亮VIS IRL3705ZS IR IRFP460PBF 粉VIS IRL3713PBF M IR IRFP4668PBF IR IRL3713PBF C IR IRFP4710PBF IR IRL3803PBF M IR IRFP4768PBF C IR IRL3803STRPBF IR IRFP90N20DPBF M IR IRL3803S M IR IRFP9140NPBF M IR IRL520N IR IRFP9140PBF C VIS IRL520NPBF P IR IRFP9140 M IR IRL530N IR IRFP9240PBF C VIS IRL530STRRPBF VIS IRFPC50PBF C VIS IRL540N IR IRFPC60LCPBF C VIS IRL540NPBF M IR IRFPE30PBF C VIS IRL540NS IR IRFPE40PBF C VIS IRL540NSTRLPBF IR IRFPE50PBF C VIS IRL640STRLPBF VIS IRFPF40IR IRL7833PBF IR IRFPF40PBF C VIS IRLB3034PBF IR IRFPF50PBF IR IRLB4030PBF IR IRFPF50PBF M IR IRLI3615IR IRFPG30PBF C VIS IRLI3803IR IRFPG50PBF C VIS IRLI540G IR IRFPS37N50APBF IR IRLI640G IR IRFPS3815PBF IR IRLL014NTRPBF IR IRFPS40N50LPBF VIS IRLL024NTRPBF IR IRFPS40N15LPBF VIS IRLL024ZTRPBF IR IRFPS40N60KPBF VIS IRLL110TRPBF IR IRFPS43N50LPBFIRLL2703TRPBF IR IRFPS43N50KPBF IR IRLL2705TRPBF IR IRFR014TRPBF VIS IRLL3303TRPBF IR IRFR024NTRPBF IR IRLML2402TRPBF IR IRFR110TRPBF IR IRLML2502TRPBF IR IRFR1205TRPBF VIS IRLML2803TRPBF IR IRFR120NTRPBF IR C IRLML5103TRPBF IR IRFR120TRPBF IR IRLML5203TRPBF IR IRFR13N15DTRPBF IR IRLML6302TRPBF IR IRFR12N25DTRPBF IR IRLML6401TRPBF IR IRFU6215IR IRLML6402TRPBF IR IRFR13N20D IR IRLMS5703TRPBF IR IRFR13N20DTRPBF IR IRLMS6802TRPBF IR IRFR18N15DPBF IR IRLR014NTRPBF VIS IRFR210BTF FSC IRLR014PBF VIS IRFR210TRPBF IR IRLR024NTRPBF IR IRFR220NTRPBF IR IRLR2908TRPBF IR IRFR224PBF VISIRLR120NTR IR IRFR2407TRLPBF IR IRLR120NTRPBF IR IRFR2405TRPBF IR IRLR2703TR IR IRFR24N15DPBF IR IRLR2703TRPBF IR IRFR2905ZTRPBF IR IRLR2705IR IRFR310TRPBF VIS IRLR2905TRPBF C IR IRFR320TRPBF VIS IRLR3103TR IR IRFR3418TRL IR IRLR3410TRPBF IR IRFR3303TR IR IRLR3714ZTRPBF IR IRFR3607TRPBF IR IRLR3715ZTRPBF IR IRFR3410TRPBF IR IRLR3717IR IRFR3704TRPBF IR IRLR7821TRPBF IR IRFR3707ZCPBF IR IRLR7833IR IRFR3707ZTRPBF IR IRLR7833TRPBF IR IRFR3709ZTR IR IRLR7843TR IR IRFR3709ZTRPBF IR IRLR8113IR IRFR3710ZTRLPBF IR IRLR8203PBF IR IRFR3711IR IRLR8726TRPBF IR IRFR3711TR IR IRLR9343TRPBF VISHAY IRFR3910TRPBF IR IRLU024NPBF IR IRFR4104TRPBF IR IRLU024Z IR IRFR420ATRLPBF VIS IRLU024ZPBF IR IRFR420PBF VIS IRLU120NPBF IR IRFR420TRPBF IR IRLU120PBF VISHAY IRFR430ATRPBF VIS IRLZ24NPBF-墨西哥IR IRFR5305PBF IR IRLZ34N IR IRFR5305TRPBF IR IRLZ34NPBF-菲律宾IR IRFR5410TRPBF IR IRLZ34NPBF-墨西哥IR IRFR5505GTRPBF IR IRLZ34NPBF-中国IR IRFR5505TRPBF VIS IRLZ44IR IRFR6215TRPBF IR IRLZ44NPBF-墨西哥IR IRFR9014TRPBF IR IRLZ44NS IR IRFR9024NTRPBF IR IRLZ44PBF IR IRFR9110TRPBF VIS IRS2003STRPBF IR IRFR9120NTRPBF IR IRS20124STRPBF IR IRFR9210TRPBF VIS IRS2092STRPBF IR IRFR9220TRPBF IR IRS20955STRPBF IR IRFR9310TRLPBF IR IRS20957STRPBF IR。
国美电子 N0702A-R 高频导线系列产品说明书
Dimensions: [mm]Scale - 20:1742843122742843122742843122742843122T e m p e r a t u r eT pT L742843122Cautions and Warnings:The following conditions apply to all goods within the product series of WE-CBF-HF of Würth Elektronik eiSos GmbH & Co. KG:General:•This electronic component is designed and manufactured for use in general electronic equipment.•Würth Elektronik must be asked for written approval (following the PPAP procedure) before incorporating the components into any equipment in fields such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network, etc. where higher safety and reliability are especially required and/or if there is the possibility of direct damage or human injury.•Electronic components that will be used in safety-critical or high-reliability applications, should be pre-evaluated by the customer. •The component is designed and manufactured to be used within the datasheet specified values. If the usage and operation conditions specified in the datasheet are not met, the component may be damaged or dissolved.•Do not drop or impact the components, the component may be damaged•Würth Elektronik products are qualified according to international standards, which are listed in each product reliability report. Würth Elektronik does not warrant any customer qualified product characteristics beyond Würth Elektroniks’ specifications, for its validity and sustainability over time.•The responsibility for the applicability of the customer specific products and use in a particular customer design is always within the authority of the customer. All technical specifications for standard products also apply to customer specific products.Product specific:Soldering:•The solder profile must comply with the technical product specifications. All other profiles will void the warranty. Wave soldering is allowed for components bigger than 0805 after evaluation and approval.•All other soldering methods are at the customers’ own risk.Cleaning and Washing:•Washing agents used during the production to clean the customer application might damage or change the characteristics of the wire insulation, marking or plating. Washing agents may have a negative effect on the long-term functionality of the product.Potting:•If the product is potted in the customer application, the potting material might shrink or expand during and after hardening. Shrinking could lead to an incomplete seal, allowing contaminants into the core. Expansion could damage the components. We recommend a manual inspection after potting to avoid these effects. Storage Conditions:• A storage of Würth Elektronik products for longer than 12 months is not recommended. Within other effects, the terminals may suffer degradation, resulting in bad solderability. Therefore, all products shall be used within the period of 12 months based on the day of shipment.•Do not expose the components to direct sunlight.•The storage conditions in the original packaging are defined according to DIN EN 61760-2.•The storage conditions stated in the original packaging apply to the storage time and not to the transportation time of the components. Packaging:•The packaging specifications apply only to purchase orders comprising whole packaging units. If the ordered quantity exceeds or is lower than the specified packaging unit, packaging in accordance with the packaging specifications cannot be ensured. Handling:•Violation of the technical product specifications such as exceeding the nominal rated current will void the warranty.•The temperature rise of the component must be taken into consideration. The operating temperature is comprised of ambient temperature and temperature rise of the component.The operating temperature of the component shall not exceed the maximum temperature specified.These cautions and warnings comply with the state of the scientific and technical knowledge and are believed to be accurate and reliable.However, no responsibility is assumed for inaccuracies or incompleteness.Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODMHB004.0002020-03-03DIN ISO 2768-1mDESCRIPTIONWE-CBF HF SMT EMI SuppressionFerrite Bead (High Frequency)ORDER CODE742843122SIZE/TYPE BUSINESS UNIT STATUS PAGEImportant NotesThe following conditions apply to all goods within the product range of Würth Elektronik eiSos GmbH & Co. KG:1. General Customer ResponsibilitySome goods within the product range of Würth Elektronik eiSos GmbH & Co. KG contain statements regarding general suitability for certain application areas. These statements about suitability are based on our knowledge and experience of typical requirements concerning the areas, serve as general guidance and cannot be estimated as binding statements about the suitability for a customer application. The responsibility for the applicability and use in a particular customer design is always solely within the authority of the customer. Due to this fact it is up to the customer to evaluate, where appropriate to investigate and decide whether the device with the specific product characteristics described in the product specification is valid and suitable for the respective customer application or not.2. Customer Responsibility related to Specific, in particular Safety-Relevant ApplicationsIt has to be clearly pointed out that the possibility of a malfunction of electronic components or failure before the end of the usual lifetime cannot be completely eliminated in the current state of the art, even if the products are operated within the range of the specifications.In certain customer applications requiring a very high level of safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health it must be ensured by most advanced technological aid of suitable design of the customer application that no injury or damage is caused to third parties in the event of malfunction or failure of an electronic component. Therefore, customer is cautioned to verify that data sheets are current before placing orders. The current data sheets can be downloaded at .3. Best Care and AttentionAny product-specific notes, cautions and warnings must be strictly observed. Any disregard will result in the loss of warranty.4. Customer Support for Product SpecificationsSome products within the product range may contain substances which are subject to restrictions in certain jurisdictions in order to serve specific technical requirements. Necessary information is available on request. In this case the field sales engineer or the internal sales person in charge should be contacted who will be happy to support in this matter.5. Product R&DDue to constant product improvement product specifications may change from time to time. As a standard reporting procedure of the Product Change Notification (PCN) according to the JEDEC-Standard inform about minor and major changes. In case of further queries regarding the PCN, the field sales engineer or the internal sales person in charge should be contacted. The basic responsibility of the customer as per Section 1 and 2 remains unaffected.6. Product Life CycleDue to technical progress and economical evaluation we also reserve the right to discontinue production and delivery of products. As a standard reporting procedure of the Product Termination Notification (PTN) according to the JEDEC-Standard we will inform at an early stage about inevitable product discontinuance. According to this we cannot guarantee that all products within our product range will always be available. Therefore it needs to be verified with the field sales engineer or the internal sales person in charge about the current product availability expectancy before or when the product for application design-in disposal is considered. The approach named above does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.7. Property RightsAll the rights for contractual products produced by Würth Elektronik eiSos GmbH & Co. KG on the basis of ideas, development contracts as well as models or templates that are subject to copyright, patent or commercial protection supplied to the customer will remain with Würth Elektronik eiSos GmbH & Co. KG. Würth Elektronik eiSos GmbH & Co. KG does not warrant or represent that any license, either expressed or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, application, or process in which Würth Elektronik eiSos GmbH & Co. KG components or services are used.8. General Terms and ConditionsUnless otherwise agreed in individual contracts, all orders are subject to the current version of the “General Terms and Conditions of Würth Elektronik eiSos Group”, last version available at .Würth Elektronik eiSos GmbH & Co. KGEMC & Inductive SolutionsMax-Eyth-Str. 174638 WaldenburgGermanyCHECKED REVISION DATE (YYYY-MM-DD)GENERAL TOLERANCE PROJECTIONMETHODMHB004.0002020-03-03DIN ISO 2768-1mDESCRIPTIONWE-CBF HF SMT EMI SuppressionFerrite Bead (High Frequency)ORDER CODE742843122SIZE/TYPE BUSINESS UNIT STATUS PAGE。
IRF8736PBF中文资料
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
IRF8736PbF
1000 100 10
TOP BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
Max. 30 ± 20 18 14.4 144 2.5 1.6
0.02 -55 to + 150
Units V
A W
W/°C °C
Typ. ––– –––
Max. 20 50
Units °C/W
Notes through are on page 9
1
08/1/07
元器件交易网
100
10
TJ = 150°C
1
0.1
0.01 1.0
TJ = 25°C
VDS = 15V ≤ 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 18A VGS = 10V
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C)
ir2117strpbf规格书
ir2117strpbf规格书【实用版】目录1.产品概述2.主要特性3.规格参数4.应用领域5.环境要求6.安全信息7.结构说明8.工作原理9.测试方法10.维护与保养正文1.产品概述ir2117strpbf 是一种高性能、低成本的电子元器件,具有出色的稳定性和可靠性。
它广泛应用于各种电子设备和系统中,为设备提供稳定的电源和信号传输功能。
2.主要特性ir2117strpbf 具有以下主要特性:- 高稳定性:在恶劣的工作环境下,仍能保持稳定的工作性能。
- 低失真:信号传输过程中失真度低,保证了信号的完整性和准确性。
- 宽工作温度范围:能在 -40℃至 +125℃的温度范围内正常工作。
- 抗干扰能力强:能有效抵抗各种电磁干扰,保证设备的正常运行。
3.规格参数ir2117strpbf 的规格参数如下:- 电压范围:3.3V-5V- 电流范围:50mA-100mA- 工作温度范围:-40℃至 +125℃- 存储温度范围:-40℃至 +125℃- 抗静电能力:±15KV- 封装形式:SOP-84.应用领域ir2117strpbf 广泛应用于以下领域:- 电子消费品:如电视机、收音机、音响设备等。
- 通讯设备:如手机、电话机、传真机等。
- 计算机及周边设备:如电脑、路由器、打印机等。
- 工业控制设备:如工控机、可编程控制器等。
5.环境要求为了保证 ir2117strpbf 的正常工作和延长使用寿命,应满足以下环境要求:- 避免阳光直射和潮湿环境。
- 避免暴露在高温、低温、高湿度的环境中。
- 避免与腐蚀性物质接触。
- 避免强烈的机械振动和冲击。
6.安全信息在操作和使用 ir2117strpbf 时,请注意以下安全信息:- 请勿用湿手触摸或操作设备。
- 请勿在未断电的情况下拆卸设备。
- 请确保设备接地良好,以防止静电损伤。
- 如有异常现象,请立即停止使用并联系专业人员处理。
7.结构说明ir2117strpbf 的结构说明如下:- 引脚 1:电源正极(VCC)- 引脚 2:电源负极(GND)- 引脚 3:输出信号(OUT)- 引脚 4:控制信号(CTRL)- 引脚 5:公共地(GND)- 引脚 6:公共地(GND)- 引脚 7:公共地(GND)- 引脚 8:输出信号(OUT)8.工作原理ir2117strpbf 的工作原理如下:当控制信号(CTRL)为高电平时,输出信号(OUT)跟随输入信号;当控制信号为低电平时,输出信号呈高阻态。
ir2112strpbf规格书
ir2112strpbf规格书IR2112STRPBF是一款电路驱动芯片,被广泛应用于直流至交流(DC-AC)转换器、电机驱动和逆变器等领域。
本文将围绕IR2112STRPBF规格书展开阐述,分步骤介绍该芯片的性能指标、引脚功能、电气特性以及应用场景。
一、性能指标IR2112STRPBF的主要性能指标包括主电源电压、引脚输入电压、输出电流、输出功率等。
其中,主电源电压为10V至20V,引脚输入电压为-0.5V至+5V,输出电流最大为2A,输出功率最大为10W。
二、引脚功能IR2112STRPBF芯片共有14个引脚,其功能如下:1. HO:高侧驱动器输出,用于驱动功率开关管;2. HO-:带负载下的高侧驱动器输出,与HO引脚互补;3. VS:高侧驱动器电源,接受10V至20V的电源电压;4. VB:串联补偿器输入,用于补偿之间延迟;5. LG:逻辑地面,用于引脚与芯片之间的接地;6. VCC:低侧驱动器电源,接受10V至20V的电源电压;7. VB-:带负载下的串联补偿器输入,与VB引脚互补;8. SD:PWM延迟,提供PWM开关时间的延迟;9. IN+: 输入控制信号+,逻辑输入为高电平时产生;10. IN-:输入控制信号-,逻辑输入为低电平时产生;11. COM:低侧驱动器输出,用于驱动功率开关管;12. COM-:带负载下的低侧驱动器输出,与COM引脚互补;13. VS-:低侧驱动器电源,接受10V至20V的电源电压;14. HO+: 高侧浮动输出+,适用于高侧无级反激拓扑。
三、电气特性IR2112STRPBF芯片的电气特性包括开路电压、输出电流、输出功率、低电平输入电压、高电平输入电压等指标。
其中,开路电压为600V,输出电流为2A,输出功率为10W,低电平输入电压为0.8V,高电平输入电压为2.4V。
四、应用场景IR2112STRPBF芯片在电力电子设备中被广泛应用,主要应用于驱动功率开关管的直流交流转换器、逆变器和电机驱动等领域。
FREDFET单die功率管数据表说明书
Absolute Maximum RatingsThermal and Mechanical CharacteristicsSingle die FREDFETUnitA V mJA UnitW °C/W°Coz g in·lbf N·mRatings 3724115±3078018Min Typ Max5200.240.11-551503000.22 6.2101.1ParameterContinuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1Gate-Source VoltageSingle Pulse Avalanche Energy 2Avalanche Current, Repetitive or Non-RepetitiveCharacteristicTotal Power Dissipation @ T C = 25°C Junction to Case Thermal ResistanceCase to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case)Package WeightMounting Torque (TO-247 Package), 6-32 or M3 screwSymbol I D I DM V GS E AS I ARSymbol P D R θJC R θCS T J ,T STGT L W TTorque TYPICAL APPLICATIONS•ZVS phase shifted and other full bridge •Half bridge•PFC and other boost converter •Buck converter•Single and two switch forward •FlybackFEATURES•Fast switching with low EMI •Low t rr for high reliability•Ultra low C rss for improved noise immunity •Low gate charge •Avalanche energy rated •RoHS compliantAPT37F50B APT37F50SPower MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t rr , soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C rss /C iss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.N-Channel FREDFETMicrosemi Website - 050-8125 R e v D 8-2011Resistive Switching V DD = 333V , I D = 18A R G = 4.7Ω 6 , V GG = 15VStatic CharacteristicsT J = 25°C unless otherwise speci fi edSource-Drain Diode CharacteristicsDynamic CharacteristicsT J = 25°C unless otherwise speci fi edAPT37F50B_S1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2Starting at T J = 25°C, L = 4.81mH, R G = 25Ω, I AS = 18A.3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.4 C o(cr) is def ned as a f xed capacitance with the same stored charge as C OSS with V DS = 67% of V (BR)DSS .5 C o(er) is def ned as a f xed capacitance with the same stored energy as C OSS with V DS = 67% of V (BR)DSS . To calculate C o(er) for any value of V DS less than V (BR)DSS, use this equation: C o(er) = -1.33E-7/V DS ^2 + 3.06E-8/V DS + 8.83E-11.6 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)Microsemi reserves the right to change, without notice, the speci fi cations and information contained herein.Unit V V/°C ΩV mV/°C μA nAUnit SpFnCnsUnitAV ns μC A V/nsMin Typ Max 5000.600.13 0.152.54 5-102501000±100Min Typ Max275710 75 615 355180 14532 65 25 29 65 21Min Typ Max371151.22504500.88 2.18 8.4 11.820Test ConditionsV GS = 0V , I D = 250μA Reference to 25°C, I D = 250μAV GS = 10V , I D = 18AV GS = V DS , I D = 1mA V DS = 500V T J = 25°C V GS = 0VT J = 125°CV GS = ±30VTest ConditionsV DS = 50V , I D = 18AV GS = 0V , V DS = 25Vf = 1MHzV GS = 0V , V DS = 0V to 333VV GS = 0 to 10V , I D = 18A,V DS = 250V Test ConditionsMOSFET symbol showing theintegral reverse p-n junction diode (body diode)I SD = 18A , T J = 25°C, V GS = 0VT J = 25°C T J = 125°CI SD = 18A 3T J = 25°C di SD /dt = 100A/μs T J = 125°C V DD = 100VT J = 25°C T J = 125°CI SD ≤ 18A, di/dt ≤1000A/μs, V DD = 333V,T J = 125°CParameterDrain-Source Breakdown VoltageBreakdown Voltage Temperature Coeff cient Drain-Source On Resistance 3Gate-Source Threshold VoltageThreshold Voltage Temperature Coeff cient Zero Gate Voltage Drain Current Gate-Source Leakage CurrentParameterForward Transconductance Input CapacitanceReverse Transfer Capacitance Output CapacitanceEffective Output Capacitance, Charge RelatedEffective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall TimeParameterContinuous Source Current (Body Diode)Pulsed Source Current (Body Diode) 1Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dtSymbolV BR(DSS)∆V BR(DSS)/∆T JR DS(on)V GS(th)∆V GS(th)/∆T JI DSS I GSSSymbolg fs C iss C rss C oss C o(cr) 4C o(er) 5Q g Q gs Q gd t d(on)t r t d(off)t fSymbolI S I SM V SD t rr Q rr I rrm dv/dt050-8125 R e v D 8-2011V G S , G A T E -T O -S O U R C E V O L T A G E (V )g f s , T R A N S C O N D U C T A N C ER D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C EI D , D R A I N C U R R E N T (A )I S D , R E V E R S E D R A I N C U R R E N T (A )C , C A P A C I T A N C E (p F )I D , D R A I N C U R R E N T (A )I D , D R I A N C U R R E N T (A )V DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 1, Output CharacteristicsFigure 2, Output CharacteristicsT J , JUNCTION TEMPERATURE (°C) V GS , GATE-TO-SOURCE VOLTAGE (V)Figure 3, R DS(ON) vs Junction Temperature Figure 4, Transfer CharacteristicsI D , DRAIN CURRENT (A)V DS , DRAIN-TO-SOURCE VOLTAGE (V)Figure 5, Gain vs Drain CurrentFigure 6, Capacitance vs Drain-to-Source Voltage Q g , TOTAL GATE CHARGE (nC)V SD , SOURCE-TO-DRAIN VOLTAGE (V)Figure 7, Gate Charge vs Gate-to-Source VoltageFigure 8, Reverse Drain Current vs Source-to-Drain VoltageAPT37F50B_S050-8125 R e v D 8-2011D3PAK Package OutlineTO-247 (B) Package Outline1.22 (.048)1.32 (.052){3 Plcs}and Leadsare Platedne1 SAC: Tin, Silver, Copper e3 100% Sn PlatedDimensions in Millimeters (Inches)Dimensions in Millimeters (Inches) ID,DRAINCURRENT(A)VDS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area ZθJC,THERMALIMPEDANCE(°C/W)RECTANGULAR PULSE DURATION (seconds)Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse DurationID,DRAINCURRENT(A)2001001010.10.250.200.150.100.052001001010.1APT37F50B_S 05-8125RevD8-211。
AW8736_产品手册-音频放大
D3 PVDD
COUT 4.7uF
单端输入
15nF Cin
Cin 15nF
3KΩ
Rin C1
220pF Rin
3KΩ
A2 INN
A1 INP
AW8736
B4 VOP
B1 C2 1nF
VON D4
B2
C3
1nF
GND C2,C3,C4
图 1 AW8736 单端输入方式应用图
图 2 AW8736 差分输入方式应用图
NCN 功能 √ √ √
注 1:AW8736 功放外部输入电阻为 Rin,内部输入电阻为 16.5K,内部反馈电阻为 80K,第二级放大 倍数为 4 倍,则总的放大倍数为 80K*4/(Rin+16.5K),模式说明中的 Rin=3K。
引脚分布图
AW8736FCR TOP VIEW (俯视图)
D C2P
AW8736 采用艾为专有的 TDD-Noise 抑制技 术和 EMI 抑制技术,有效抑制 TDD-Noise 和 EMI 干扰的产生。
AW8736 内置过流保护、过热保护和短路保 护功能,有效地保护芯片。AW8736 采用纤小的 2mm×2mm FC-16 封装。
( W)
( %)
NCN
版权所有 ©2012 上海艾为电子技术有限公司 1
aw8736产品手册音频放大音频功率放大器音频放大器音频功率放大电路音频放大软件音频功率放大器论文音频放大电路lm386音频放大电路音频放大三极管音频放大电路音频前置放大电路
产品简介
AW8736 V0.9 音乐功放系列
高效率、超低失真、恒定大音量、第六代 K 类音乐功放
特性
♦ 新一代电荷泵升压技术:K-Chargepump 架构, 效率高达 92%
通信原理书籍
***********通信原理书籍目录 ************* 《The ARRL Antenna Book(19th)》30页《电磁场基本教程》319页《电磁场与波》391页《电信工程设计手册_短波通信.12》702页《电子书籍》•121兆大小《短波通信电路设计》328页《高速通讯线路与系》14.8兆大小《国外军用飞机通信设备手册》462页《晶体管接收机电路的原理与设计》637页《宽带匹配网络的理论与设计(增订本)》13.8兆《无线电波传播》1059页《无线通信常用数据手册(修订本)[1].part1》680页《现代电信交换》396页《dds9851频率合成器》《大功率宽带射频脉冲功率放大器设计》《电子设备中的隔离技术》《分体中波超远程接受装置》《全固态中波发射机的维护》《衰减器原理》《有源窄带晶体滤波器》《1915的QST杂志》28页《OFDM移动通信技术原理与应用》283页《trk90电台外接单片机调节频率》《WS430型无线收信机的维修》195页《半导体无线电广播接收机理论与计算基础》395页《变容二极管的应用》333页《参量放大器》65页《超短波的传播》56页《超短波调频广播》115页《超短波无线通信》481页《超高频电视调谐器设计与原理》318页《超高频技术》355页《超高频接收机》589页《初级无线电技术》251页《地球站微波收发信机》361页《电报史话》84页《电波的世界》225页•《电话电报移动通信实用手册》291页《电视和调频发射机》466页《电信工程设计手册--短波通信》717页《电子爱好者的金桥-业余无线电通信》187页《电子调谐器原理与设计》723页《电子工程师便携手册》451页《电子学与无线电原理上册》559页《电子学与无线电原理下册》567页《调频广播用发射机与接收机》182页《调频及其应用》311页《调频立体声广播发射机》319页《调频袖珍电台的设计与制造》431页《短波单边带小型台维护手册(XDD-D2B及IC-M700TY电台)》269页《短波电台电力设备维护手册》157页《短波数字通信自适应选频技术》327页《短波通信电路设计》335页《短波中小型收发信机维护手册》302页《发射测量-英文》《范氏基本图解无线电学》301页《峰窝式移动电话原理-使用-检修》178页《高频电路基础》364页《高频电路设计技术》195页《高频电路设计与制作》259页《高频电路原理》270页《高频调谐器原理与维修》500页《各种发射类别的无线电接收机的测量方法》85页《广播发射新技术》239页《广播发送技术》338页《简单无线电装置》91页《简明无线电爱好者实用资料手册》530页《简明无线电原理》218页《简易无线电测试》82页•《晶体管接收机电路的原理与设计》645页《精品系列无线电爱好者读本(上)(第二次修订本)》609页《精品系列无线电爱好者读本(下)(第二次修订本)》418页《列车调度无线电话》202页《模范无线电读本》160页《平流层气球载通信系统》《千万个为什么(9)无线电篇》322页《浅谈无线电通信》129页《青年无线电工程师》221页《青少年电子巧技》288页《趣味无线电工学》220页《少年无线电》95页《少年无线电爱好者(上册)》159页《少年无线电爱好者(下册)》150页《少年无线电入门》158页《甚高频通信设备原理与维修》197页《实验无线电对讲机》244页《实用高频电路集》39页《实用无线电讲话》599页《实用移动无线电通信》358页《数字声频与广播播控技术》270页《数字微波收发信机维护手册》420页《苏联业余无线电丛书无线电电子设备的可靠性》69页《特高频无线电技术问题》122页《铁淦氧在无线电机中的应用》83页《通信、广播电路与系统》378页《通信广播电路原理与应用》431页《通信技术常识第二集超短波调频电台》56页《通信接收机:DSP、软件无线电和设计》595页《通信原理》436页《通信原理与电路》357页《外军电台手册》280页•《万有文库第一集一千种_无线电报及无线电话》155页《万有文库第一集一千种_无线电原理》137页《无线电“猎狐”》235页《无线电爱好者创作资料集 1》46页《无线电爱好者电路》622页《无线电波传播》1081页《无线电波传播理论及其应用》534页《无线电波是怎样传播的》90页《无线电测量术》146页《无线电常识(上册)》138页《无线电常识(下册)》173页《无线电初步》263页《无线电电路研究》218页《无线电电子学第二册》330页《无线电电子学第三册》234页《无线电电子学第一册》273页《无线电电子知识入门》372页《无线电读本上册》190页《无线电读本下册》252页《无线电短波收信机测试》108页《无线电多路通讯》422页《无线电发射接收原理》202页《无线电工程(上、下册)》486页《无线电工学(苏-布拉麦尔)》578页《无线电工学(苏-亚力山大罗夫)》349页《无线电工学基础》393页《无线电工业常用胶粘剂》121页《无线电广播工程》232页《无线电广播技术手册》1175页《无线电广播与接收》359页《无线电广播中的调频技术》344页《无线电话收音机管理法全一册》55页•《无线电机件装配指南》162页《无线电机修理法》139页《无线电基本知识》234页《无线电基础》407页《无线电基础与收音机》287页《无线电计量》386页《无线电技术》158页《无线电技术-2》427页《无线电技术参考资料印制电路及其制造》77页《无线电技术基础》241页《无线电技术基础(上册)》550页《无线电技术基础(苏)》744页《无线电技术讲座》212页《无线电讲话》230页《无线电接收》511页《无线电接收的工业干扰及其抑制》316页《无线电接收机大意》151页《无线电接收设备》404页《无线电接收设备(上册)》228页《无线电接收设备(下册)》352页《无线电结构设计手册》800页《无线电器材设计》290页《无线电器材试验》352页《无线电器材制造(上下册)》683页《无线电钳工基础工艺》315页《无线电设备的回路零件》330页《无线电设备结构设计》296页《无线电设备结构设计与工艺》306页《无线电设备元件零件的结构设计与制造工艺(上册)》574页《无线电设备元件零件的结构设计与制造工艺(下册)》393页《无线电设计结构设计》298页《无线电识图与电路故障分析轻松入门》•469页《无线电实用技术手册》469页《无线电世界》415页《无线电世界(中)》408页《无线电收信和无线电收信机的工作》252页《无线电收信中心》496页《无线电数学(上册)》253页《无线电数学(下册)》369页《无线电台是怎样工作的》258页《无线电通信设备维修》287页《无线电小组及其工作》95页《无线电信号频谱》308页《无线电修理技术(上册)》471页《无线电修理技术(下册)》477页《无线电修理技术(中册)》829页《无线电学》171页《无线电摇控制作》153页《无线电遥测》207页《无线电遥控电路专集》196页《无线电遥控模型飞机》129页《无线电遥控组件及其应用电路》254页《无线电应用手册》283页《无线电应用数学(上、下册)》337页《无线电与电视(2003年2,3,4,6,7期)》325页《无线电原理上、下册》698页《无线电原理及应用》345页《无线电知识》106页《无线短波发信机维护手册——6_8千瓦单边带发信机》161页《无线短波发信机维护手册——35千瓦单边带发信机》184页《无线短波发信机维护手册——50_80千瓦短波发信机》230页《无线短波收信机维护手册——5601型单边带接收机》203页《无线短波收信机维护手册——WR811型移频电报接收机》242页《无线通信电路基础教程》257页•《现代通信技术应用大全》744页《现代通信新技术(第2版)》458页《现代无线电通信知识讲座》307页《小型电台及其组网应用》323页《小型无线电机》375页《小型无线电机的电源》172页《小型无线电台》120页《小型无线电台的使用与维护》118页《小型无线电台技术手册》162页《新旧电气图形符号对照读本》69页《新型无线电通信接收机》182页《业余超短波无线电通信》103页《业余无线电1》42页《业余无线电及其机械维修技巧1200例》436页《业余无线电计算图表》116页《业余无线电手册》378页《业余无线电通信》237页《业余无线电问答(苏)》135页《业余无线电问答(中)》102页《业余无线电元器件手册》489页《移动式无线电台》97页《应用无线电及电子技术公式集》499页《怎样实现电视和调频广播远距离接收》289页《怎样抑制电气设备对无线电的干扰》90页《中短波辐射》《中短波广播发射机》182页《高速PCB设计指南》《锁相环设计软件》《印刷电路板排版设计》288页《2002ARRL HANDBOOK》114页《ARRL HANDBOOK 2006 CD.ISO---》• 《ARRL Radio Amateur Handbook 2000》《GSM基础讲座》105页《jarl业余无线电手册_11198348超星阅读》《wireless communications》545页《超再生式无线收信机》《带阻及低通微带滤波器的分析与设计》《电磁干扰排查及故障解决的电磁兼容技术》235页《电力线载波通信设计资料》4.83兆大小《电子科技大学通信原理19讲-视频》788兆大小《电子元器件焊接技术-视频》199兆《多相滤波器的原理及其实现》《高频无源部件设计》33页《国内外功率晶体管实用手册(下)_10004037》1429页《集群通信系统概述》《晶体管手册》《扩展频谱通信简介》《雷达手册》1051页《射频电平单位dBW、dBm、dBmV、dBμV的关系》《射频微波工程百科全书.Encyclopedia.of.RF.and.Microwave.Engineering》119兆大小《实用电子线路集》612页《通信电路》3.49兆大小《通信知识》1.63兆大小《微波电子线路》236页《现代微波滤波器的结构与设计》899页《业余超短波无线电通信》103页《振荡电路实用设计手册_10844117》311页《无线电应用基础知识必读》《PCB板蛇形走线有什么作用》《丙类倍频器》《短波频带中的各种信号》《短波收音机混频电路浅析》•《混频器,滤波器,功率合成..》《火腿肠谈盗听器发现和秘话解读功能》《滤波器的过去、现在与未来》《漫谈DDS,PLL和纯LC振荡器》《漫谈短波的音质》《密码电台》《偏转管混频器介绍》《软件无线电》《深入浅出话拍频》《说说现代业余无线电接收技术中的常用功能《跳频术:巧设信息战安全走廊》》《通俗点来谈SSB工作模式和原理》《通信系统传输单位—分贝》《直接频率合成(DDS)技术介绍》《转贴一篇有关频率合成的文章》************晶体、电子管、功放目录 ************* 《15瓦射频放大器》《LM386功放电路图》《TL-922 完整的短波电子管功放电路图及内部实物图》《电真空器件手册》818页《电子管手册(1-4辑)》•1827页《负反馈》164页《射频功放的收发切换电路》《苏联《输出变压器的设计》中文》《自制高频电子管功率放大器》《2-30MHz 8W宽带线性放大器》《15w射频功率放大器》《40瓦28兆电子管(FU-7)功放电路图》《100w功放内部图(晶体管)》《600瓦FL-2100B电子管功放(内部图片)》《1932年的电子管原理教材(部分)》《Alpha87A射频电子管功放内部图片(超清析-漂亮)》《C1970与C1971的区别》《DIY 708B电台 10W功放》《FU-50高频电子管功率放大器电路图》《HF PA SU IRF640 廉价功放》《LM386低电压应用设计音频功率放大器》《MOTO AN779晶体管功放图片》《NE602使用资料》《PTT控制电路》《常用稳压电子管参数》《常用元器件的识别》《成品HF功放比拼,看看怎样DIY》《大功率电子管电路及PTT控制电路(老外)》《胆机故障分析》《胆机噪声完全手册》《电子管116短波功率放大器改造图纸》《电子管差分放大功放的制作与调试》《电子管发明简史》《电子管发射机图纸(15-20瓦)》《电子管功放的调整》《电子管及其电路》《电子管特性曲线》•《高功率放大器设计(内有实物及电路图)》《高频电子管功率放大器(内有实物及电路图)》《高频全波段25瓦线性放大器》《功放板改造》《功放图片(内有实物及电路图)真养眼功放汇集(内有实物及电路图)》《功放图片(实物)》《功放图片汇集(内有实物及电路图)》《短波功放欣赏:ACOM-1000(真养眼)》《功率合成》《功率合成器电路图》《军机74上的400W功放及天调部分》《看朋友解剖大功放及大小81电台演变等(详细图片)》《宽频带高频功率放大器》《请看我DIY的80瓦电子管射频功放》《束射四极管常用电路及其电路数据》《肖特基二极管简介》《学习一下短波胆龟的制作(图片及电路图)》《一个电子管的CW发射(图文并茂)》《栅放大器的几个线路》《中国真空电子工业的发展历程》《1-50兆100瓦经典射频功放-图文并茂》《2sc1945发射晶体管参数》《2sc1946发射晶体管参数》《2sc1970发射晶体管参数》《2sc1972发射晶体管参数》《2sc2053发射晶体管参数》《2sc2237发射晶体管参数》《2sc2383发射晶体管参数》《2sc2538发射晶体管参数》《2sc2539发射晶体管参数》《2sc2539发射晶体管参数》•《2sc2690发射晶体管参数》《2sc2904发射晶体管参数》《2sc3019发射晶体管参数》《2sc3021发射晶体管参数》《2sc3101发射晶体管参数》《2sc3356发射晶体管参数》《74-3CE型军用发射机功放电路图》《300瓦短波线型放大器原理与调试(图文并茂)》《57704m三菱射频功放模块》《57704uh三菱射频功放模块》《67741h三菱射频功放模块》《67741l三菱射频功放模块》《96834_MITSUBISHI_QM30HC-2H(三菱模块)》《ct60AM三极管》《IRFBC40管参数》《M68702L东芝射频功放模块》《MRF392射频功放管参数》《MRF464射频功放管参数》《S-AU27东芝射频功放模块》《S-AU57东芝射频功放模块》《TA7805-24S稳压管详细参数》《常见三菱发射管参数》《常用电子管、离子管、晶体管手册》74页《常用电子管电路手册》178页《常用电子元件及典型应用》518页《常用电子元器件使用技巧300问》498页《常用集成电路实用手册》762页《常用三极管替换手册》1414页《常用收信电子管应用手册》268页《场效应管手册》386页《超高频电子管-01》•436页《超高频电子管-02》364页《超高频电子管原理》277页《超高频电子学引论电子管计算基础》297页《从电子管到超大规模集成电路》154页《大型发射管实用维修手册》307页《低电压晶体管电路》202页《电子爱好者实用资料大全元器件篇》1190页《电子功放电路图》177页《电子管科学图书大库图解电子学(三)》台湾,141页《电子管(上册)》362页《电子管(下册)》316页《电子管测试》207页《电子管的计算与设计》207页《电子管的理论和计算基础下册》446页《电子管的维护》259页《电子管等效参数手册》181页《电子管电路基础》214页《电子管放大电路实践》177页《电子管放大器基础》《电子管放大器基础-2 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pcb电子管功放原理图及详细参数电路板设计及实物图(养眼呀)》《delta1000电子管功放原理图(用811A)》《高频管使用方法(摘自无线电世界)》《世界可控硅参数大全》666页《世界最新集成运算放大器互换手册——日、美、西德、荷兰、法和中国型号及其互换》691页《电子管放大电路实践》183页《电子管放大电路实践》《2sc1970-1971-1972发射管参数》《2sc2053发射管参数及使用电路图》《9011~9018三极管参数手册》《circuit_hl1kgx电子管功放原理图》《circuit_hl37v电子管功放原理图》《circuit_hl82v晶体管功放原理图》《circuit_hl110v晶体管功放原理图》《circuit_hl160v25a晶体管功放原理图》《circuit_hl180v晶体管功放原理图》《CMOS 4000系列集成电路标准中文数据手册》523页《CS-5A型电子管测试仪-BD7EI》41页《FU-13 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-1型VHFUHF两波段J型天线》《FORCE12的部分天线资料内有详细天线尺寸)》《GP天线》《八木天线-》《多段J型天线设计计算软件》•《接地与搭接》《近代天线设计》《实用天线设计与制作-书籍》144页《天线工程手册》1252页《天线设计与制作(R.A彭福德(英)著)》80页《435兆八木天线图》《FMA9901A调频广播专用天线》《懒汉天线原理图》《144MHz九单元八木天线制作》《st310a军用天线使用说明书》《0.7米6单元HB9CV天线(图片)》《2 米波段杜普勒矩环定向天线》《2.4G天线(图片)》《6M,2M,0。
常用开关电源芯片大全之欧阳育创编
常用开关电源芯片大全第1章DC-DC电源转换器/基准电压源1.1 DC-DC电源转换器1.低噪声电荷泵DC-DC电源转换器AAT3113/AAT31142.低功耗开关型DC-DC电源转换器ADP30003.高效3A开关稳压器AP15014.高效率无电感DC-DC电源转换器FAN56605.小功率极性反转电源转换器ICL76606.高效率DC-DC电源转换控制器IRU30377.高性能降压式DC-DC电源转换器ISL64208.单片降压式开关稳压器L49609.大功率开关稳压器L4970A10.1.5A降压式开关稳压器L497111.2A高效率单片开关稳压器L497812.1A高效率升压/降压式DC-DC电源转换器L597013.1.5A降压式DC-DC电源转换器LM157214.高效率1A降压单片开关稳压器LM1575/LM2575/LM2575HV15.3A降压单片开关稳压器LM2576/LM2576HV16.可调升压开关稳压器LM257717.3A降压开关稳压器LM259618.高效率5A开关稳压器LM267819.升压式DC-DC电源转换器LM2703/LM270420.电流模式升压式电源转换器LM273321.低噪声升压式电源转换器LM275022.小型75V降压式稳压器LM500723.低功耗升/降压式DC-DC电源转换器LT107324.升压式DC-DC电源转换器LT161525.隔离式开关稳压器LT172526.低功耗升压电荷泵LT175127.大电流高频降压式DC-DC电源转换器LT176528.大电流升压转换器LT193529.高效升压式电荷泵LT193730.高压输入降压式电源转换器LT195631.1.5A升压式电源转换器LT196132.高压升/降压式电源转换器LT343333.单片3A升压式DC-DC电源转换器LT343634.通用升压式DC-DC电源转换器LT346035.高效率低功耗升压式电源转换器LT346436.1.1A升压式DC-DC电源转换器LT346737.大电流高效率升压式DC-DC电源转换器LT378238.微型低功耗电源转换器LTC175439.1.5A单片同步降压式稳压器LTC187540.低噪声高效率降压式电荷泵LTC191141.低噪声电荷泵LTC3200/LTC3200-542.无电感的降压式DC-DC电源转换器LTC325143.双输出/低噪声/降压式电荷泵LTC325244.同步整流/升压式DC-DC电源转换器LTC340145.低功耗同步整流升压式DC-DC电源转换器LTC340246.同步整流降压式DC-DC电源转换器LTC340547.双路同步降压式DC-DC电源转换器LTC340748.高效率同步降压式DC-DC电源转换器LTC341649.微型2A升压式DC-DC电源转换器LTC342650.2A两相电流升压式DC-DC电源转换器LTC342851.单电感升/降压式DC-DC电源转换器LTC344052.大电流升/降压式DC-DC电源转换器LTC344253.1.4A同步升压式DC-DC电源转换器LTC345854.直流同步降压式DC-DC电源转换器LTC370355.双输出降压式同步DC-DC电源转换控制器LTC373656.降压式同步DC-DC电源转换控制器LTC377057.双2相DC-DC电源同步控制器LTC380258.高性能升压式DC-DC电源转换器MAX1513/MAX151459.精简型升压式DC-DC电源转换器MAX1522/MAX1523/MAX152460.高效率40V升压式DC-DC电源转换器MAX1553/MAX155461.高效率升压式LED电压调节器MAX1561/MAX159962.高效率5路输出DC-DC电源转换器MAX156563.双输出升压式DC-DC电源转换器MAX1582/MAX1582Y64.驱动白光LED的升压式DC-DC电源转换器MAX158365.高效率升压式DC-DC电源转换器MAX1642/MAX164366.2A降压式开关稳压器MAX164467.高效率升压式DC-DC电源转换器MAX1674/MAX1675/MAX167668.高效率双输出DC-DC电源转换器MAX167769.低噪声1A降压式DC-DC电源转换器MAX1684/MAX168570.高效率升压式DC-DC电源转换器MAX169871.高效率双输出降压式DC-DC电源转换器MAX171572.小体积升压式DC-DC电源转换器MAX1722/MAX1723/MAX172473.输出电流为50mA的降压式电荷泵MAX173074.升/降压式电荷泵MAX175975.高效率多路输出DC-DC电源转换器MAX180076.3A同步整流降压式稳压型MAX1830/MAX183177.双输出开关式LCD电源控制器MAX187878.电流模式升压式DC-DC电源转换器MAX189679.具有复位功能的升压式DC-DC电源转换器MAX194780.高效率PWM降压式稳压器MAX1992/MAX199381.大电流输出升压式DC-DC电源转换器MAX61882.低功耗升压或降压式DC-DC电源转换器MAX62983.PWM升压式DC-DC电源转换器MAX668/MAX66984.大电流PWM降压式开关稳压器MAX724/MAX72685.高效率升压式DC-DC电源转换器MAX756/MAX75786.高效率大电流DC-DC电源转换器MAX761/MAX76287.隔离式DC-DC电源转换器MAX8515/MAX8515A88.高性能24V升压式DC-DC电源转换器MAX872789.升/降压式DC-DC电源转换器MC33063A/MC34063A90.5A升压/降压/反向DC-DC电源转换器MC33167/MC3416791.低噪声无电感电荷泵MCP1252/MCP125392.高频脉宽调制降压稳压器MIC220393.大功率DC-DC升压电源转换器MIC229594.单片微型高压开关稳压器NCP1030/NCP103195.低功耗升压式DC-DC电源转换器NCP1400A96.高压DC-DC电源转换器NCP140397.单片微功率高频升压式DC-DC电源转换器NCP141098.同步整流PFM步进式DC-DC电源转换器NCP142199.高效率大电流开关电压调整器NCP1442/NCP1443/NCP1444/NCP1445100.新型双模式开关稳压器NCP1501101.高效率大电流输出DC-DC电源转换器NCP1550102.同步降压式DC-DC电源转换器NCP1570103.高效率升压式DC-DC电源转换器NCP5008/NCP5009 104.大电流高速稳压器RT9173/RT9173A105.高效率升压式DC-DC电源转换器RT9262/RT9262A106.升压式DC-DC电源转换器SP6644/SP6645107.低功耗升压式DC-DC电源转换器SP6691108.新型高效率DC-DC电源转换器TPS54350109.无电感降压式电荷泵TPS6050x110.高效率升压式电源转换器TPS6101x111.28V恒流白色LED驱动器TPS61042112.具有LDO输出的升压式DC-DC电源转换器TPS6112x 113.低噪声同步降压式DC-DC电源转换器TPS6200x114.三路高效率大功率DC-DC电源转换器TPS75003115.高效率DC-DC电源转换器UCC39421/UCC39422116.PWM控制升压式DC-DC电源转换器XC6371117.白光LED驱动专用DC-DC电源转换器XC9116118.500mA同步整流降压式DC-DC电源转换器XC9215/XC9216/XC9217119.稳压输出电荷泵XC9801/XC9802120.高效率升压式电源转换器ZXLB16001.2 线性/低压差稳压器121.具有可关断功能的多端稳压器BAXXX122.高压线性稳压器HIP5600123.多路输出稳压器KA7630/KA7631124.三端低压差稳压器LM2937125.可调输出低压差稳压器LM2991126.三端可调稳压器LM117/LM317127.低压降CMOS500mA线性稳压器LP38691/LP38693128.输入电压从12V到450V的可调线性稳压器LR8129.300mA非常低压降稳压器(VLDO)LTC3025130.大电流低压差线性稳压器LX8610131.200mA负输出低压差线性稳压器MAX1735132.150mA低压差线性稳压器MAX8875133.带开关控制的低压差稳压器MC33375134.带有线性调节器的稳压器MC33998135.1.0A低压差固定及可调正稳压器NCP1117136.低静态电流低压差稳压器NCP562/NCP563137.具有使能控制功能的多端稳压器PQxx138.五端可调稳压器SI-3025B/SI-3157B139.400mA低压差线性稳压器SPX2975140.五端线性稳压器STR20xx141.五端线性稳压器STR90xx142.具有复位信号输出的双路输出稳压器TDA8133143.具有复位信号输出的双路输出稳压器TDA8138/TDA8138A144.带线性稳压器的升压式电源转换器TPS6110x145.低功耗50mA低压降线性稳压器TPS760xx146.高输入电压低压差线性稳压器XC6202147.高速低压差线性稳压器XC6204148.高速低压差线性稳压器XC6209F149.双路高速低压差线性稳压器XC64011.3 基准电压源150.新型XFET基准电压源ADR290/ADR291/ADR292/ADR293151.低功耗低压差大输出电流基准电压源MAX610x152.低功耗1.2V基准电压源MAX6120153.2.5V精密基准电压源MC1403154.2.5V/4.096V基准电压源MCP1525/MCP1541155.低功耗精密低压降基准电压源REF30xx/REF31xx156.精密基准电压源TL431/KA431/TLV431A第2章AC-DC转换器及控制器1.厚膜开关电源控制器DP104C2.厚膜开关电源控制器DP308P3.DPA-Switch系列高电压功率转换控制器DPA423/DPA424/DPA425/DPA4264.电流型开关电源控制器FA13842/FA13843/FA13844/FA138455.开关电源控制器FA5310/FA53116.PWM开关电源控制器FAN75567.绿色环保的PWM开关电源控制器FAN76018.FPS型开关电源控制器FS6M07652R9.开关电源功率转换器FS6Sxx10.降压型单片AC-DC转换器HV-2405E11.新型反激准谐振变换控制器ICE1QS0112.PWM电源功率转换器KA1M088013.开关电源功率转换器KA2S0680/KA2S088014.电流型开关电源控制器KA38xx15.FPS型开关电源功率转换器KA5H0165R16.FPS型开关电源功率转换器KA5Qxx17.FPS型开关电源功率转换器KA5Sxx18.电流型高速PWM控制器L499019.具有待机功能的PWM初级控制器L599120.低功耗离线式开关电源控制器L659021.LINK SWITCH TN系列电源功率转换器LNK304/LNK305/LNK30622.LINK SWITCH系列电源功率转换器LNK500/LNK501/LNK52023.离线式开关电源控制器M51995A24.PWM电源控制器M62281P/M62281FP25.高频率电流模式PWM控制器MAX5021/MAX502226.新型PWM开关电源控制器MC4460427.电流模式开关电源控制器MC4460528.低功耗开关电源控制器MC4460829.具有PFC功能的PWM电源控制器ML482430.液晶显示器背光灯电源控制器ML487631.离线式电流模式控制器NCP120032.电流模式脉宽调制控制器NCP120533.准谐振式PWM控制器NCP120734.低成本离线式开关电源控制电路NCP121535.低待机能耗开关电源PWM控制器NCP123036.STR系列自动电压切换控制开关STR8xxxx37.大功率厚膜开关电源功率转换器STR-F665438.大功率厚膜开关电源功率转换器STR-G865639.开关电源功率转换器STR-M6511/STR-M652940.离线式开关电源功率转换器STR-S5703/STR-S5707/STR-S570841.离线式开关电源功率转换器STR-S6401/STR-S6401F/STR-S6411/STR-S6411F 442.开关电源功率转换器STR-S651343.离线式开关电源功率转换器TC33369~TC3337444.高性能PFC与PWM组合控制集成电路TDA16846/TDA1684745.新型开关电源控制器TDA1685046.“绿色”电源控制器TEA150447.第二代“绿色”电源控制器TEA150748.新型低功耗“绿色”电源控制器TEA153349.开关电源控制器TL494/KA7500/MB375950.Tiny SwitchⅠ系列功率转换器TNY253、TNY254、TNY25551.Tiny SwitchⅡ系列功率转换器TNY264P~TNY268G52.TOP Switch(Ⅱ)系列离线式功率转换器TOP209~TOP22753.TOP Switch-FX系列功率转换器TOP232/TOP233/TOP23454.TOP Switch-GX系列功率转换器TOP242~TOP25055.开关电源控制器UCX84X56.离线式开关电源功率转换器VIPer12AS/VIPer12ADIP57.新一代高度集成离线式开关电源功率转换器VIPer53第3章功率因数校正控制/节能灯电源控制器1.电子镇流器专用驱动电路BL83012.零电压开关功率因数控制器FAN48223.功率因数校正控制器FAN75274.高电压型EL背光驱动器HV8265.EL场致发光背光驱动器IMP525/IMP5606.高电压型EL背光驱动器/反相器IMP8037.电子镇流器自振荡半桥驱动器IR21568.单片荧光灯镇流器IR21579.调光电子镇流器自振荡半桥驱动器IR215910.卤素灯电子变压器智能控制电路IR216111.具有功率因数校正电路的镇流器电路IR216612.单片荧光灯镇流器IR216713.自适应电子镇流器控制器IR252014.电子镇流器专用控制器KA754115.功率因数校正控制器L656116.过渡模式功率因数校正控制器L656217.集成背景光控制器MAX8709/MAX8709A18.功率因数校正控制器MC33262/MC3426219.固定频率电流模式功率因数校正控制器NCP165320.EL场致发光灯高压驱动器SP440321.功率因数校正控制器TDA4862/TDA486322.有源功率因数校正控制器UC385423.高频自振荡节能灯驱动器电路VK05CFL24.大功率高频自振荡节能灯驱动器电路VK06TL第4章充电控制器1.多功能锂电池线性充电控制器AAT36802.可编程快速电池充电控制器BQ20003.可进行充电速率补偿的锂电池充电管理器BQ20574.锂电池充电管理电路BQ2400x5.单片锂电池线性充电控制器BQ2401xB接口单节锂电池充电控制器BQ2402x7.2A同步开关模式锂电池充电控制器BQ241008.集成PWM开关控制器的快速充电管理器BQ29549.具有电池电量计量功能的充电控制器DS277010.锂电池充电控制器FAN7563/FAN756411.2A线性锂/锂聚合物电池充电控制器ISL629212.锂电池充电控制器LA5621M/LA5621V13.1.5A通用充电控制器LT157114.2A恒流/恒压电池充电控制器LT176915.线性锂电池充电控制器LTC173216.带热调节功能的1A线性锂电池充电控制器LTC173317.线性锂电池充电控制器LTC173418.新型开关电源充电控制器LTC198019.开关模式锂电池充电控制器LTC400220.4A锂电池充电器LTC400621.多用途恒压/恒流充电控制器LTC400822.4.2V锂离子/锂聚合物电池充电控制器LTC405223.可由USB端口供电的锂电池充电控制器LTC405324.小型150mA锂电池充电控制器LTC405425.线性锂电池充电控制器LTC405826.单节锂电池线性充电控制器LTC405927.独立线性锂电池充电控制器LTC406128.镍镉/镍氢电池充电控制器M62256FP29.大电流锂/镍镉/镍氢电池充电控制器MAX150130.锂电池线性充电控制器MAX150731.双输入单节锂电池充电控制器MAX1551/MAX155532.单节锂电池充电控制器MAX167933.小体积锂电池充电控制器MAX1736B接口单节锂电池充电控制器MAX181135.多节锂电池充电控制器MAX187336.双路输入锂电池充电控制器MAX187437.单节锂电池线性充电控制器MAX189838.低成本/多种电池充电控制器MAX190839.开关模式单节锂电池充电控制器MAX1925/MAX192640.快速镍镉/镍氢充电控制器MAX2003A/MAX200341.可编程快速充电控制器MAX712/MAX71342.开关式锂电池充电控制器MAX74543.多功能低成本充电控制器MAX846A44.具有温度调节功能的单节锂电池充电控制器MAX8600/MAX860145.锂电池充电控制器MCP73826/MCP73827/MCP7382846.高精度恒压/恒流充电器控制器MCP73841/MCP73842/MCP73843/MCP73844 647.锂电池充电控制器MCP73861/MCP7386248.单节锂电池充电控制器MIC7905049.单节锂电池充电控制器NCP180050.高精度线性锂电池充电控制器VM7205。
UL873中文版(关键章节)
UL 873Temperature – Indicating and Regulating Equipment温度显示和调节装臵中译本2009.082007.11.161UL 873温度显示和调节装臵标准第1版– 1942.8第2版– 1945.3第3版– 1947.1第4版– 1953.6第5版– 1956.12第6版– 1958.12第7版– 1970.5第8版– 1972.9第9版– 1979.5第10版– 1988.9第11版– 1994.12第12版2007.11.16结构10 调节档板 (27)11 动作机构 (28)12 复位机构-限制控制器 (30)13 调校装臵 (31)性能40 温度试验 (86)41 漏电流试验 (90)42 潮态处理后的漏电流试验 (92)43 操作试验 (93)44 校验试验 (93)45 过载试验 (95)46 耐久性试验 (101)47 介电耐压试验 (104)47.1 概述 (104)47.2 感应电压 (105)47.3 重复感应电压 (106)61 调节档板强度试验 (123)10 调节挡板10.1 由用户操作的、用来限制调节机构的的旋转角度或其移动长度的部件–以下称作调节挡板–其结构在按预期使用方式操作时应能承受61节“调节挡板的强度试验”中的相应试验。
10.2 如果拟在终端产品中使用装臵去限止10.1款所述的调节挡板活动,下述要求适用于终端产品而不是控制器,但:a)如果需要在器具上施加延长手柄等,控制器的调节挡板应有必要的强度以防止在运输和搬运时损坏和改变校验装臵。
b)若控制器没有拟装在器具插头或其它机构里面的调节挡板,在最终装配前应将调节装臵临时密封以减少校验装臵可能的损坏或改变。
c)调节挡板应按照61节“调节挡板强度试验”中的规定试验,但施加在调节装臵上的力矩或力不必大于1磅-英寸(0.1牛.米)或1磅(4.5牛顿)。
11 动作机构11.1 温度指示或恒温装臵的装配结构应保证其不会受到装臵正常动作时产生的振动的影响。
菲尼克斯电气开关电源中文样本资料精
62
-MINI电源,12-24 V DC / 24 V DC,12 V DC,48 V DC
63
-MINI电源,48-60 V DC / 24 V DC
65
不间断电源(UPS)
66
高可靠性:输入失效的情况下,缓冲时间20ms以上
QUINT UPS IQ
-24 V DC / 24 V DC
68
可室外安装:宽工作温度范围
易于调试:LED状态指示
压降补偿:输出电压范围可调节
产品目录
电源概述及选型
4
电源
QUINT电源
-1 AC / 24 V DC
34
-3 AC / 24 V DC
36
-1 AC / 12 V DC,48 V DC
38
-3 AC /带喷漆涂层
76
-用于AS-I系统
CN
INTERFACE
11/12
INTERFACE
创新电源 ——系统的可靠保证
创 新 电 源
TNR 5768710/10.2011-01 Printed In China © PHOENIX CONTACT2011
2 PHOENIX CONTACT
INTERFACE电源
QUINT SFB电源 TRIOR电源 MINI电源 STEP电源
-1 AC / 1 AC
70
-电池模块
72
方便接线:采用可插拔带防错编码的COMBICON连接
器(10A)以下
-缓冲模块
73
TRIO UPS
专门设计:三相电源在某一相输入失效时,仍可有效的
工作
-1 AC / 24 V DC
74
MINI UPS
IRF5806TRPBF;中文规格书,Datasheet资料
-VDS , Drain-to-Source Voltage (V)
4
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
10
ID = -4.0A
VDS =-16V
8
C,
Ciss
6
400
4
200
Coss Crss
1 10 100
2
0
0
-VDS , Drain-to-Source Voltage (V)
0
4
8
12
16
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Max.
-20 -4.0 -3.3 -16.5 2.0 1.3 0.02 ± 20 -55 to + 150
Units
V A W W W/°C V °C
Thermal Resistance
Parameter
RθJA Maximum Junction-to-Ambient
Max.
62.5
Units
°C/W
D D
1 6 2
A D
5
D
G
3
4
S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
全系列场效应管参数
全系列场效应管参数场效应管(Field Effect Transistor,FET)是一种电子器件,广泛应用于电子电路中的放大、开关和调节等功能。
场效应管有三种主要类型:结型场效应管(JFET)、金属氧化物半导体场效应管(MOSFET)和绝缘体门极场效应管(IGFET)。
(一)结型场效应管(JFET)结型场效应管是最早出现的一种场效应管。
它可以分为N沟道型(N-channel)和P沟道型(P-channel)两种。
1.N沟道型JFET的主要参数:(1)漏极电流(IDSS):即在栅极与源极之间施加零偏压时,漏级电流的最大值。
它是JFET工作时的参考电流。
(2)增益参数(gm):漏极电流对栅极-源极电压变化的响应速度,也是电流放大系数。
(3)转导电导(gm):指沟道中的电流与栅极电压之间的关系。
(4)金属-半导体界面反向电容(Cgd):栅极-漏极间的电容。
(5)漏极电流温度系数(IDSS/°C):指漏极电流随温度变化的百分比。
2.P沟道型JFET的主要参数与N沟道型类似。
(二)金属氧化物半导体场效应管(MOSFET)金属氧化物半导体场效应管是目前最常用的场效应管。
它也可以分为N沟道型和P沟道型两种。
1.N沟道型MOSFET的主要参数:(1)漏极电流(ID):漏极电流的大小。
(2)增益参数(gm):漏极电流对栅极电压变化的响应速度,类似于JFET中的增益参数。
(3)沟道电阻(RDSon):沟道中的电阻。
(4)栅极电压范围(VGS):栅极电压的最大允许范围。
(5)漏极-源极电流温度系数(ID/°C):指漏极-源极电流随温度变化的百分比。
2.P沟道型MOSFET的主要参数与N沟道型类似。
(三)绝缘体门极场效应管(IGFET)绝缘体门极场效应管是一种特殊的MOSFET,其中绝缘层用于隔离栅极和沟道。
1.二极管结型(D-MOSFET)的主要参数:(1)漏极电流(ID):漏级电流的大小。
(2)增益参数(gm):漏级电流对栅极电压变化的响应速度。
PT486F规格书
PT486F 技术手册
第一章 产品特点及使用注意事项........................................................................................ 5
1. 特点.................................................................................................................................................................................5 2. 机芯使用注意事项.........................................................................................................................................................6
厦门普瑞特科技有限公司
PT486F 技术手册
热敏机芯承认书
产品名称:48mm 热敏打印机芯 产品型号:PT486F
编制 曾永生
供方 审核 沈宏斌
2011.09.26 2011.09.26
承认 林锦毅
2011.09.26
供货公司:厦门普瑞特科技有限公司
公司电话:0592-5932525 传真:0592-5930505 地址:福建省厦门市崎南 12 路 8 号 (艾德航空工业园)4、5 楼 联系人:任小薇
厦门普瑞特科技有限公司pt486f技术手册wwwprttechcom25页24热敏头参数241额定参数型号规格备注打印宽度48mm加热点数384dots点密度0125mm点大小011mm013mm电阻值1763当选用h系列时r1233选通信号个串行输入数据输入逻辑信号逻辑电压5060mamhz加热电压85v热敏电阻2530k5b3950k3具体参数详见2242最大值参数代号规格说明026mjdot25msline加热能量eomax020mjdot125mslineta25加热电压vh10连接线两端逻辑电压vdd55同时加热点数ndotmax192dots工作温度ta5储存温度40无运转工作湿度1090rh无冷凝储存湿度590rh243推荐参数参数代号推荐工作参数说明建议速度25msline125msline加热功率po0238wdot0336wdot176加热电压vh72v85v连接线两端020mjdot077ms017mjdot047ms25018mjdot070ms014mjdot039ms加热能量40eots016mjdot062ms013mjdot036ms电流io368madot437madot176详见247pdf文件使用试用版本创建www
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RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 1.3 2.2 ––– 12 –––
e Ω VDD = 15V, VGS = 4.5V
––– 15 –––
ID = 14.4A
2.4
2.2
2.0
1.8
ID = 50µA
1.6
1.4
1.2
1.0
0.8 -75 -50 -25 0 25 50 75 100 125 150
TJ, Temperature ( °C )
Fig 9. Maximum Drain Current Vs. Ambient Temperature
––– 219 –––
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR
d Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ. ––– –––
Max. 126 14.4
Units mJ A
Diode Characteristics
1
0.1 0.1
2.3V
≤ 60µs PULSE WIDTH Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current (A)
1000 100
OPERATION IN THIS AREA LIMITED BY R DS(on)
100µsec
1msec 10
10msec
1 TA = 25°C Tj = 150°C Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
D
5
D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V
Parameter
IS
Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 3.1
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
à (Body Diode)
VSD
Diode Forward Voltage
––– 16 ––– 19
24 29
e ns TJ = 25°C, IF = 14.4A, VDD = 10V
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
4
VDS= 24V VDS= 15V
3
2
1
0
0
4
8
12
16
20
Qg, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
ISD, Reverse Drain Current (A)
1000
100
TJ = 150°C 10
100
10
TJ = 150°C
1
0.1
0.01 1.0
TJ = 25°C
VDS = 15V ≤ 60µs PULSE WIDTH
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
IRF8736PbF
1000 100 10
TOP BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
Thermal Resistance
Parameter
RθJL RθJA
g Junction-to-Drain Lead fg Junction-to-Ambient
Max. 30 ± 20 18 14.4 144 2.5 1.6
0.02 -55 to + 150
Units V
A W
W/°C °C
Typ. ––– –––
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
––– ––– 144
A showing the integral reverse
––– ––– 1.0
e p-n junction diode.
V TJ = 25°C, IS = 14.4A, VGS = 0V
Max. 20 50
Units °C/W
Notes through are on page 9
1
08/1/07
/
IRF8736PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Fig 4. Normalized On-Resistance Vs. Temperature 3
/
IRF8736PbF
C, Capacitance (pF)
10000 1000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Min. Typ. Max. Units
Conditions
BVDSS ∆ΒVDSS/∆TJ RDS(on)
VGS(th) ∆VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance
gfs
Forward Transconductance
Qg
Total Gate Charge
52 ––– ––– ––– 17 26
S VDS = 15V, ID = 14.4A
Qgs1 Qgs2 Qgd Qgodr
Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive
––– 4.4 –––
VDS = 15V
––– 1.9 ––– nC VGS = 4.5V
––– 5.8 –––
ID = 14.4A
––– 4.9 –––
See Fig. 16
Qsw
Switch Charge (Qgs2 + Qgd)
––– 7.7 –––
Qoss
Output Charge
––– 7.1 ––– nC VDS = 10V, VGS = 0V
TJ = 25°C 1
0.1 0.2
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
4
ID, Drain-to-Source Current (A)
Applications l Synchronous MOSFET for Notebook
Processor Power l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in Networking Systems
Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
/
ID, Drain-to-Source Current (A)
1000 100 10 1
TOP BOTTOM
VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V
0.1
0.01
0.001 0.1
2.3V
≤ 60µs PULSE WIDTH Tj = 25°C