MJE18002;MJE18002G;中文规格书,Datasheet资料

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SB18650S1800mAh规格书 2

SB18650S1800mAh规格书 2
*在将电池装入设备或从设备中取出之前详细阅读设备操作手册。
*电池具有使用寿命,如果使用电池的设备的工作时间比平常少得多,要对电池进行更换。
*电池寿命终止后要立刻从设备中取出。
*当长期不用时,要将电池从设备中取出并放在低温低湿的环境中保存。
*电池应在远离静电的场所进行充电、使用和储存。
*如果电池的接线端变脏,在使用之前用干布擦净。
6
浸泡性能
不爆炸、不起火
在室温下将充满电的电池在清水里浸泡24小时
7
重物冲击
性能
不爆炸、不起火
将充满电的电池放置在一个平面上,将一重10㎏重锤自61cm高度自由落下,冲击在已固定在夹具中的电池(电池面积最大的面应与台面垂直)
5.3电芯可靠性特性
序号
项目
标准
测试方法
1
高温高湿实验
电池的工作性能、外观不受影响
合肥赛力新能源有限公司
锂离子电池规格书
电池型号:18650S/2000mAh
标称电压:3.7V
拟定:审核:批准:
合肥赛力新能源有限公司
地址:合肥市高新技术开发区香樟大道189号
电话:(0551)5774558
传真:(0551)5302123
邮编:230088
合肥赛力新能源有限公司
报告类别
产品规格书
部门
在环境温度为25±5℃的条件下,标准充电后静置10分钟,3C5A放电至3.00V,循环3次,当有一次放电达到标准,即可终止。
5
0.5C5A循环寿命
放电容量≥初始容量*70%
测试电池的初始状态和初始容量,在环境温度为25±5℃的条件下,以0.5C5A电流恒流放电至3.00V,再以0.5C5A电流恒流充电至4.20V,然后4.20V恒压充电至截止电流,静置10min,再进行下一个充放电循环,直至1000次循环。

E22-400T22D 产品规格书说明书

E22-400T22D 产品规格书说明书

E22-400T22D产品规格书SX1268 433/470MHz 160mW LoRa无线模块目录第一章产品概述 (3)1.1 产品简介 (3)1.2 特点功能 (3)1.3 应用场景 (3)第二章规格参数 (4)2.1 极限参数 (4)2.2 工作参数 (4)第三章机械尺寸与引脚定义 (5)第四章推荐连线图 (6)第五章功能详解 (7)5.1定点发射 (7)5.2 广播发射 (7)5.3 广播地址 (8)5.4 监听地址 (8)5.5 模块复位 (8)5.6 AUX详解 (8)5.6.1 串口数据输出指示 (8)5.6.2 无线发射指示 (9)5.6.3 模块正在配置过程中 (9)5.6.4 注意事项 (9)第六章工作模式 (10)6.1 模式切换 (10)6.2 一般模式(模式0) (11)6.3 WOR模式(模式1) (11)6.4 配置模式(模式2) (11)6.5 深度休眠模式(模式3) (11)第七章寄存器读写控制 (12)7.1 指令格式 (12)7.2 寄存器描述 (13)7.3 出厂默认参数 (15)第八章中继组网模式使用 (15)第九章上位机配置说明 (16)第十章硬件设计 (17)第十一章常见问题 (18)11.1 传输距离不理想 (18)11.2 模块易损坏 (18)11.3 误码率太高 (18)第十二章焊接作业指导 (19)第十三章相关型号 (19)第十四章天线指南 (19)14.1 天线推荐 (19)修订历史 (20)关于我们 (20)第一章产品概述1.1 产品简介E22-400T22D是全新一代的LoRa无线模块,基于SEMTECH公司SX1268射频芯片的无线串口模块(UART),具有多种传输方式,工作在(410.125~493.125MHz)频段(默认433.125MHz),LoRa扩频技术,TTL 电平输出,兼容3.3V 与5V 的IO 口电压。

E22-400T22S采用全新一代LoRa扩频技术,与传统SX1278方案相比,SX1268方案传输距离更远,速度更快,功耗更低,体积更小;支持空中唤醒、无线配置、载波监听、自动中继、通信密钥等功能,支持分包长度设定,可提供定制开发服务。

MJE182中文资料

MJE182中文资料

MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORSs SGS-THOMSON PREFERRED SALESTYPES sCOMPLEMENTARY PNP - NPN DEVICESDESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications.®September 1998ABSOLUTE MAXIMUM RATINGS1/4THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 oC unless otherwise specified)For PNP type voltage and current values are negative.MJE172 - MJE182MJE172 - MJE182Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A..MJE172 - MJE182。

MD1801-1800 PDF中文资料

MD1801-1800 PDF中文资料

MD1800 1801 中文资料PRODUCT DESCRIPTIONMD1800/01是高性能的主要传感器(PSR)和单片开关电源控制器的设计电流模式控制小电源设备。

建立精确的CV/CC控制电路,消除了光耦合器,TL431及其相关回路装置。

高度集成的设计,高性能功率BJT和控制器和各种在一个芯片的保护电路,使外围元件,大大节约了成本,md180x可以简单地设计了一个典型的反激式开关变换器,独特的驱动技术推动的特点,耐压和优异的转换效率FEATURE◆滞过温度保护(OTP)电路◆输出电压保护(OVP/UVP)◆高效率,符合效率标准6级◆建立810v @ md1801,在700V@md1800功率BJT◆PSR控制替代了光耦和TL431◆精准CC/ CV控制◆空载损耗< 100 MW◆自动重启功能◆超低启动电流PINOUT CONFIGURATIONPIN Function DescriptionPin Name Function Description1 Vcc 控制器电源供应引脚。

为让控制器得到更稳定的电压,外部滤波电容必须使用低阻抗的电解电容(LOW ESR)2 FB 输出反馈引脚,通过辅助绕组电压检测输出条件变压器3 CPC 连接100+nf电容,此引脚补偿输出电缆压降4 CS 连外部的初级线圈电流传感器Rcs,控制器可以通过外部传感器电阻检测初级线圈电流。

当电阻上电压达到最大值时,内部功率晶体管将立即关闭5-6 HV 连接内部功率晶体管的集电极8 GND 接地引脚FUNCTIONAL BlOCK DIAGRAMABSOLUTE MAXIMUM RATINGSHV PIN最大电压-0.3~700V 存储温度-55~+150°IC Peak Current MD1800 280mA Lead Temperature +260°/10S MD1801 350mA ESD(Human BodyModel)2000VVCC Pin 电压8.6V 注释:1.所有电压是以IC GND为地(25°)2.持续时间不超过2ms3.即时最大额定范围指是对产品产FB Pin 电压7V其他Pin 电压Vcc+0.3V 生永久损伤的;长时间的超额定运行将影响产品的可靠性运行温度0~+150°ELECTRICAL CHARACTERISTICSFUNCTION DESCRIPTIONMD180x是专门为充电器、适配器和数字产品设计的。

TM1800中文资料

TM1800中文资料

AEG Telefunken TM1800/11000TWTA SSPA Replacement KitsMimix Broadband’s SMaRTPAK (Standard Microwave Radio TWT replacement Power Amplifier Kit) amplifiers are uniquely designed to combine the DC/DC Converter, microwave amplifier and cooling devices into one single integrated unit. Each unit has been designed using modern device technology and includes reverse polarity,overvoltage and excess thermal protection. Unlike TWT's and other TWT replacement options, SMaRTPAKs do not require a separate, bulky and often unreliable power supply.All units are designed to directly drop-in place of existing TWT or SSPA units with no modifications savingsignificant time and effort. Using the proper equipment, unit installations and alignment can typically be done almost effortlessly in less than an hour. It is r ecommended that all first time users have a Mimix Broadband representative present during initial installation. Ask us about our onsite installation and alignment options.Mimix is confident that you will be pleased with our product and each unit comes with a standard five-year warranty. If you do not see a part number that covers your desired frequency , power or radio type, feel free to contact us and we will gladly review your requirements.Description:Features:Units operate over the full 10.7-11.7 GHz frequency range 5 and 10 Watt output power levels are available Simple and easy Installation Instructions are included All units accept -21 to -56 VDC input voltage range Standard 5-Y ear WarrantyUnits Min Typ Max GHz 10.7-11.7dB --14.0-9.5ohms -50-dB 45.050.0-dB -+/-0.5+/-1.0dB-8.010.0dBm--12.0+5.0dBm +37.0+38.0----dBc --70.0dBc --60.0o -20C -+700.0%-950.0ft -16,0000.0ft -60,000-21.0V --56.0-A6.57.0Min Typ Max 10.7-11.7--14.0-9.5-50-45.050.0--+/-0.5+/-1.0-8.010.0--12.0+5.0+40.0+41.0------70.0--60.0-20-+700.0-950.0-16,0000.0-60,000-21.0--56.0-10.511.01006524 - 5W1005634 - 10WParameter Frequency Range Input Return LossInput/Output Impedance GainGain Flatness Noise Figure Input PowerOutput Power (P1dB)Spurious HarmonicsBase Operating T emperature Humidity (Non-Condensing)Altitude (Operating)Altitude (Storage)DC PowerDC Current @ +12 Voltso Electrical Characteristics (T=25C)Specifications are subject to change without notice. Export of this item may require appropriate export licensing from the U.S. Government. In purchasingthese parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. Revision-02-May-02Mimix Broadband, Inc. 10795 Rockley Rd. Houston, Texas 77099Tel: 281.988.4600 Fax: 281.988.4615 元器件交易网。

MJ-SERIES PulSE METER 产品说明书

MJ-SERIES PulSE METER 产品说明书
MJR (cold water) and MJHR (hot water) meters use a reed switch. They provide a dry contact closure and do not require power.
MJT (cold water) and MJHT (hot water) meters do not have a sensor, and they totalize only.
Internals Engineered thermoplastic
Magnet Alnico
Accuracy
+/- 1.5% of reading
Pulse Output Sensor Max Current Max Voltage
MJE/MJHE Hall-ef fect
20 mA 24 Vdc
Inlet Strainer. Clean the strainer yearly, or as required, depending on water condition. Pull out the strainer or backflush the meter to loosen trapped particulates.
SPECIFICATIONS*
MJ-Series meters use the internationally-accepted multi-jet principle. A gear train drives the register totalizer dials. For pulse output, one of the pointers is replaced by a magnet arm, which is detected by an encapsulated sensor attached to the outside of the lens.

FSFR1800XS;FSFR1800XSL;中文规格书,Datasheet资料

FSFR1800XS;FSFR1800XSL;中文规格书,Datasheet资料

FSFR-XS Series — Fairchild Power Switch (FPS ™) for Half-Bridge Resonant ConverterFeatures Variable Frequency Control with 50% Duty Cycle for Half-Bridge Resonant Converter TopologyHigh Efficiency through Zero Voltage Switching (ZVS) Internal UniFET™ with Fast-Recovery Body Diode Fixed Dead Time (350ns) Optimized for MOSFETs Up to 300kHz Operating FrequencyAuto-Restart Operation for All Protections with External LV CCProtection Functions: Over-Voltage Protection (OVP), Over-Current Protection (OCP), Abnormal Over-Current Protection (AOCP), Internal Thermal Shutdown (TSD)Applications PDP and LCD TVsDesktop PCs and Servers AdaptersTelecom Power SuppliesDescriptionThe FSFR-XS series includes highly integrated power switches designed for high-efficiency half-bridge resonant converters. Offering everything necessary to build a reliable and robust resonant converter, the FSFR-XS series simplifies designs while improving productivity and performance. The FSFR-XS series combines power MOSFETs with fast-recovery type body diodes, a high-side gate-drive circuit, an accurate current controlled oscillator, frequency limit circuit, soft-start, and built-in protection functions. The high-side gate-drive circuit has common-mode noise cancellation capability, which guarantees stable operation with excellent noise immunity. The fast-recovery body diode of the MOSFETs improves reliability against abnormal operation conditions, while minimizing the effect of reverse recovery. Using the zero-voltage-switching (ZVS) technique dramatically reduces the switching losses and significantly improves efficiency. The ZVS also reduces the switching noise noticeably, which allows a small-sized Electromagnetic Interference (EMI) filter.The FSFR-XS series can be applied to resonant converter topologies such as series resonant, parallel resonant, and LLC resonant converters.Related ResourcesAN4151 — Half-bridge LLC Resonant Converter DesignUsing FSFR-Series Fairchild Power Switch (FPS TM)Ordering InformationPart Number PackageOperating Junction TemperatureR DS(ON_MAX) Maximum Output Powerwithout Heatsink(V IN =350~400V)(1,2)Maximum Output Power with Heatsink(V IN =350~400V)(1,2)FSFR2100XS 9-SIP-40 to +130°C0.51Ω 180W 400W FSFR1800XS 0.95Ω 120W 260W FSFR1700XS 1.25Ω 100W 200W FSFR1600XS 1.55Ω 80W 160W FSFR2100XSL 0.51Ω 180W 400WFigure 2. Internal Block Diagram9 HV CC This is the supply voltage of the high-side gate-drive circuit IC.10 V CTR This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin.FSFR1700XS/L T C=25°C 6.0T C=100°C 3.9FSFR1600XS/L T C=25°C 4.5T C=100°C 2.7I LK Offset Supply Leakage Current HV CC=V CTR=500V 50μAI Q HV CC QuiescentHV CC Supply Current (HV CC UV+) - 0.1V 50 120 μAI Q LV CC QuiescentLV CC Supply Current (LV CC UV+) - 0.1V 100 200 μAI O HV CC Operating HV CC Supply Current(RMS Value) f OSC=100KHz69mADead-Time Control SectionTime(7)350nsD T DeadNotes:6. This parameter, although guaranteed, is not tested in production.7. These parameters, although guaranteed, are tested only in EDS (wafer test) process.11.05d a t 25O C11.05e d a t 25O C1m a l i z e d a t 25O Cgain is inversely proportional to the switching frequency in the ZVS region. The output voltage can be regulated by modulating the switching frequency. Figure 18 shows the typical circuit configuration for the R T pin, where the opto-coupler transistor is connected to the R T pin to modulate the switching frequency. of the resonant converter progressively. Since the voltage gain of the resonant converter is inversely proportional to the switching frequency, the soft-start is implemented by sweeping down the switching frequency from an initial high frequency (f I S S) until the output voltage is established. The soft-start circuit is made byTpin, as shown in Figure 18. FSFR-XS series also has a 3ms internalFigure 19. Frequency Sweeping of Soft-Start4. Self Auto-Restart: The FSFR-XS series can restart automatically even though any built-in protections are triggered with external supply voltage. As can be seen in Figure 20 and Figure 21, once any protections are triggered, the M1 switch turns on and the V-I converter is disabled. C SS starts to discharge until V Css across C SS drops to V CssL. Then, all protections are reset, M1 turns off, and the V-I converter resumes at the same time. The FSFR-XS starts switching again with soft-start. If the protections occur while V Css is under V CssL and V CssH level, the switching is terminated immediately, V Css continues to increase until reaching V CssH, then C SS is discharged by M1.Figure 20. Internal Block of AR PinAfter protections trigger, FSFR-XS is disabled during theI Crt stop t S/S(a)P ro te ction s a re trigge re d,(b)F SF R-U S restartsFigure 21. Self Auto-Restart Operation5. Protection Circuits: The FSFR-XS series has several self-protective functions, such as Over-Current Protection (OCP), Abnormal Over-Current Protection (AOCP), Over-Voltage Protection (OVP), and Thermal Shutdown (TSD). These protections are auto-restart mode protections, as shown in Figure 22.Once a fault condition is detected, switching is terminated and the MOSFETs remain off. When LV CC falls to the LV CC stop voltage of 10V or AR signal is HIGH, the protection is reset. The FSFR-XS resumes normal operation when LV CC reaches the start voltage of 12.5V.Figure 22. Protection Blocks5.1 Over-Current Protection (OCP): When the sensing pin voltage drops below -0.58V, OCP is triggered and the MOSFETs remain off. This protection has a shutdown time delay of 1.5µs to prevent分销商库存信息:FAIRCHILDFSFR1800XS FSFR1800XSL。

MJW18020G;中文规格书,Datasheet资料

MJW18020G;中文规格书,Datasheet资料

10.0
Ic/Ib = 5.0
10.0
Ic/Ib = 10
1.0 TJ = 25°C
TJ = −20°C
1.0 TJ = 25°C
TJ = −20°C
VBE, VOLTAGE (VOLTS)
VBE, VOLTAGE (VOLTS)
TJ = 125°C
0.1
0.001
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (A)
(IC = 3 Adc, VCE = 5 Vdc) (IC = 10 Adc VCE = 2 Vdc) (IC = 20 Adc VCE = 2 Vdc) (IC = 10 mAdc VCE = 5 Vdc)
(TC = 125°C) (TC = 125°C) (TC = 125°C)
Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 20 Adc, IB = 4 Adc)
PD
250
W
2.0
W/_C
Operating and Storage Junction Temperature Range
TJ, Tstg −65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case

30 AMPERES 1000 VOLTS BVCES 450 VOLTS BVCEO, 250 WATTS
1 2 3

MJE15034G;MJE15035G;MJE15034;MJE15035;中文规格书,Datasheet资料

MJE15034G;MJE15035G;MJE15034;MJE15035;中文规格书,Datasheet资料

MJE15034 NPN,MJE15035 PNP Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP DevicesComplementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers.Features•h FE= 100 (Min) @ I C = 0.5 Adc= 10 (Min) @ I C = 2.0 Adc•Collector−Emitter Sustaining V oltage −V CEO(sus)= 350 Vdc (Min) − MJE15034, MJE15035•High Current Gain − Bandwidth Productf T = 30 MHz (Min) @ I C = 500 mAdc•TO−220AB Compact Package•Epoxy meets UL 94 V−0 @ 0.125 in•ESD Ratings:Machine Model: CHuman Body Model: 3B•Pb−Free Packages are Available*MAXIMUM RATINGSRating Symbol Value Unit Collector−Emitter Voltage V CEO350Vdc Collector−Base Voltage V CB350Vdc Emitter−Base Voltage V EB 5.0VdcCollector Current− Continuous− Peak I C 4.08.0AdcBase Current IB 1.0AdcTotal Power Dissipation @ T C = 25_C Derate above 25_C P D500.40WW/_CTotal Power Dissipation @ T A = 25_C Derate above 25_C P D 2.00.016WW/_COperating and Storage Junction Temperature Range TJ, T stg–65 to +150_CTHERMAL CHARACTERISTICSCharacteristic Symbol MaxUnitThermal Resistance, Junction−to−Case R q JC 2.5_C/W Thermal Resistance, Junction−to−Ambient R q JA62.5_C/W Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.4.0 AMPERESPOWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS Device Package ShippingORDERING INFORMATIONMJE15034TO−220AB50 Units / RailTO−220ABCASE 221ASTYLE 1MARKING DIAGRAMMJE1503x=Device Codex = 4 or 5A=Location CodeY=YearWW=Work WeekG=Pb−Free PackageMJE15035TO−220AB50 Units / Rail MJE15035G TO−220AB(Pb−Free)50 Units / Rail MJE15034G TO−220AB(Pb−Free)50 Units / RailELECTRICAL CHARACTERISTICS (T C = 25_C unless otherwise noted)CharacteristicSymbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Sustaining Voltage (Note 1)(I C = 10 mAdc, I B = 0)V CEO(sus)350−VdcCollector Cutoff Current (V CB = 350 Vdc, I E = 0)I CBO−10m Adc Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0)I EBO −10m AdcON CHARACTERISTICS (Note 1)DC Current Gain(I C = 0.1 Adc, V CE = 5.0 Vdc)(I C = 0.5 Adc, V CE = 5.0 Vdc)(I C = 1.0 Adc, V CE = 5.0 Vdc)(I C = 2.0 Adc, V CE = 5.0 Vdc)h FE1001005010−−−−−Collector −Emitter Saturation Voltage (I C = 1.0 Adc, I B = 0.1 Adc)V CE(sat)−0.5Vdc Base −Emitter On Voltage(I C = 1.0 Adc, V CE = 5.0 Vdc)V BE(on)−1.0VdcDYNAMIC CHARACTERISTICSCurrent Gain − Bandwidth Product (Note 2)(I C = 500 mAdc, V CE = 10 Vdc, f test = 1.0 MHz)f T30−MHz1.Pulse Test: Pulse Width v 300 m s, Duty Cycle v2.0%.2.f T = ⎪h fe ⎪• f test .Figure 1. Power Derating T, TEMPERATURE (°C)40T C 2060P D , P O W E R D I S S I P A T I O N (W A T T S )02.0T A 1.03.01.0101001000V CE , COLLECTOR −EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (A M P S )Figure 2. Active Region Safe Operating Areat, TIME (ms)r (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (N O R M A L I Z E D )Figure 3. Thermal Response0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)V C E , C O L L E C T O R −E M I T T E R V O L T A G E (V )0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)V C E , C O L L E C T O R −E M I T T E R V O L T A G E (V )0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I N0.010.1 1.010I C , COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I NFigure 4. DC Current Gain, V CE = 5.0 VNPN MJE15034Figure 5. DC Current Gain, V CE = 5.0 VPNP MJE15035Figure 6. DC Current Gain, V CE = 20 VNPN MJE15034Figure 7. DC Current Gain, V CE = 20 VPNP MJE15035Figure 8. V CE(sat)NPN MJE15034Figure 9. V CE(sat)PNP MJE150350.00.20.40.60.81.01.20.010.1 1.010I C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E −E M I T T E R V O L T A G E (V )1.40.010.1 1.010I C , COLLECTOR CURRENT (AMPS)B A S E −E M I T T E R V O L T A G E (V )Figure 10. V BE(sat)NPN MJE15034Figure 11. V BE(sat)PNP MJE150350.010.1 1.010I C , COLLECTOR CURRENT (AMPS)B AS E −E M I TT E R V O L T A G E (V )Figure 12. V BE(on)NPN MJE15034Figure 13. V BE(on)PNP MJE150350.00.20.40.60.81.01.2I C , COLLECTOR CURRENT (AMPS)f T , C U R R E N T B A N D W I D T H P R O D U C T (M H z )0.1 1.0I C , COLLECTOR CURRENT (AMPS)f T , C U R R E N T B A N D W I D T H P R O D U C T (M H z )0.0010.0110Figure 14. Typical Current Gain Bandwidth ProductNPN MJE15034Figure 15. Typical Current Gain Bandwidth ProductPNP MJE150350.010.1 1.010I C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E −E M I T T E R V O L T A G E (V )0.11.00.0010.0110PACKAGE DIMENSIONSTO −220CASE 221A −09ISSUE AGNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.DIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.5700.62014.4815.75B 0.3800.4059.6610.28C 0.1600.190 4.07 4.82D 0.0250.0360.640.91F 0.1420.161 3.61 4.09G 0.0950.105 2.42 2.66H 0.1100.161 2.80 4.10J 0.0140.0250.360.64K 0.5000.56212.7014.27L 0.0450.060 1.15 1.52N 0.1900.210 4.83 5.33Q 0.1000.120 2.54 3.04R 0.0800.110 2.04 2.79S 0.0450.055 1.15 1.39T 0.2350.255 5.97 6.47U 0.0000.0500.00 1.27V 0.045--- 1.15---Z---0.080--- 2.04FSEATING PLANESTYLE 1:PIN 1.BASE2.COLLECTOR3.EMITTER4.COLLECTORON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMJE15034G MJE15035G MJE15034 MJE15035。

28202;中文规格书,Datasheet资料

28202;中文规格书,Datasheet资料

599 Menlo Drive, Suite 100Rocklin, California 95765, USAOffice: (916) 624-8333Fax: (916) 624-8003General: info@Technical: support@Web Site: Educational: Gripper Kit for the Boe-Bot® Robot (#28202)The Gripper KitThis kit allows your Parallax Boe-Bot® Robot to pick up objects. TheBoe-Bot robot (#28132 serial or #28832 USB) is sold separately.Before getting started, take an inventory of the parts in your kit. UseFig #1 to identify each part to the parts list. Once you haveinventoried your kit, proceed to Step #1.11423456791011121315161783Recommended Tools•Small needle nosed pliers•Phillips #2 point screwdriver•Small flat-blade screwdriver• A sharp-tipped hobby knife,such as an X-Acto® knife-OR-A hand drill with 5/64″ bitWARNING!DO NOT use electricscrewdrivers with this kit. Pleaseassemble using hand tools onlyto avoid damaging your Gripper.Step #1: SpacersItem Qty Description 4 (2) Gripper link 5 (2) #4 x 1" spacer• Insert spacers into plastic Gripper links. • Use Fig #2 as a guide to install the spacers. Whendone, the pieces will appear as shown in Fig #3.Fig #2Fig #3Step #2: Gripper LinksItem Qty Description6 (1) Gripper plate7 (2) 4-40 x 1.25" pan head screw8 (2) 4-40 Hex Nut•Be sure the angled portions on top of the plastic links match the angles on top of the Gripper as shown in Fig #5.• Move links and spacers into the Gripper plate, thensecure with 4-40 screws and nuts as shown in Fig #4. • Tighten securely.• Before continuing, double check your work to ensurethat the pieces are angled as in Fig #5.Fig #4 Fig #5Step #3: Foam TapeItem Qty Description14 (4) foam tape• Cut four pieces of foam tape, each 2 inches long. •Apply foam tape to the Gripper plate as shown in Fig #7.This completes the left-side Gripper sub-assembly.Fig #6Fig #7Step #4: Second Gripper Sub-assemblyItem Qty Description4 (2) Gripper link5 (2) #4 x 1" spacer6 (1) Gripper plate7 (2) 4-40 x 1.25" pan head screw8 (2) 4-40 hex nut 14 (4) foam tape• Repeat Steps #1 through #3 to build the right-sideGripper sub-assembly in a similar fashion.• Be sure the angled portions of the links match with theGrippers face to face. Position the pieces exactly as they appear in Fig #8.• Double check your work, then proceed to Step #5.Fig #8•Assemble the Gripper sub-assemblies to the upperand lower linkage plates as shown in Fig #9. In turn, insert each plastic link, a spacer, and secure with 4-40 screws and nuts.• When all four plastic links are installed, tighten securely.•Double check your work against Fig #10. Note that the hinge tabs on the bottom plate face up, while hinge tabs on top plate face down.Step #5: Linkage PlatesItem Qty Description3 (2) linkage plate 5 (4)#4 x 1" spacer 7(4) 4-40 x 1.25" pan head screw 8 (4) 4-40 hex nutStep #6: Control ArmsItem Qty Description 10 (2) control arm 15 (4) 4-40 x ¼" pan head screw• Attach control arms with 4-40 x ¼" screws as shown in Fig #11.•Final assembly must match Fig #12. Double check your work, then proceed to Step #7.Fig #11Fig #12Step #7: E-Z ConnectorsItem Qty Description 13 (2) Brass 0.072 E-Z Connector• Follow the directions on the package to install the E/Z Connector into the control arms. Use the nylon washers, but set the screws aside for now.• Check your work; your final assembly should match Fig #13.Fig #13Step #8: Install Gripper Hinge PlateItem Qty Description1 (1) hinge mount 15 (3) 4-40 x ¼" pan head screw 8 (3) 4-40 hex nutNote: It is recommended that the servos and tires on the Boe-Bot be installed with the wheels biased toward the front of the unit as shown below. This will prevent the Boe-Bot from tipping when it picks up objects.• Attach hinge mount to the Boe-Bot with the 4-40 x ¼" screws and nuts as shown in Fig #14 and Fig #15. • Double check your work against Fig #16.Fig #14 Top ViewFig #15 Bottom ViewFig #16Assembled ViewStep #9: Position Gripper on Boe-BotItem Qty Description(1) Gripper assembly (1) Boe-Bot robot• Remove one wheel to allow for dowel pin installation in the next step, Step #10.• Position the Gripper assembly onto the hinge mount as shown in Fig #17 below.•Place the top hinge tabs over the tabs on the hinge mount so the top of the Gripper stays on the hinge mount.Fig #17Step #10: Insert Dowel Pin Item Qty Description2 (1) dowelpin• Insert dowel pin.•If dowel pin slips in very easily, use needle nose pliers to slightly crimp the center of the hinge plate.• Replace wheel.Fig #18Fig #19Fig #21Step #12: Servo BracketsItem Qty Description16 (2) servo brackets 17 (4) 4-40 x 3/8" pan head screw 8 (4) 4-40 hex nut 11 (1) Parallax Standard Serv o• Attach servo brackets to servo with 4-40 screws and nuts. Make sure the metal brackets are placed below the plastic servo tabs as shown in Fig #22.•The final assembly should match Fig #23. Double check your work, then proceed to Step #13.Note: Only one arm of the servo horn is shown for clarity.Fig #22Fig #23Step #13: Bend Actuator RodItem Qty Description 12 (1) actuator rod•Using the needle nose pliers, bend actuator rod at mid-point. Then bend as shown in Fig #24.Fig #24Step #14: Install Actuator Rod Item Qty Description12 (1) actuatorrod11 (1) Parallax Standard Servo•Thread bent rod through servo horn as shown in Fig #25.Fig #25分销商库存信息: PARALLAX 28202。

J-1800控制器使用说明

J-1800控制器使用说明

第一章系统概述JB-TB-J1800火灾报警控制器为我公司按最新国家标准GB4717-93和GB16806-97设计研制而成。

控制器可以同时实现火灾报警和灭火联动两种功能, 可以与我公司生产的各种类型火灾探测部件、联动部件、显示部件如:光电感烟探测器、电子感温探测器、线型红外光束感烟探测器、线型感温缆式探测器、手动报警按钮, 消火栓报警按钮、声光报警器、总线控制模块、总线输入模块、总线隔离模块、广播电话系统、火灾显示盘(即楼层显示器)、气体灭火盘等设备组成火灾自动报警及联动控制系统。

JB-TB-J1800控制器分为壁挂式和入柜式两种形式。

JB-TB-J1800控制器目前根据容量分为2回路、4回路和8回路三种机型。

每回路的容量为:127个报警点+63个联动点+15台火灾显示盘。

1.1 JB-TB-J1800控制器的特点1.两总线无极性,采用地址编码技术。

整个系统只用两根总线,建筑物布线极其简单,布线路径及方式任意,且不分先后顺序,提高了布线可靠性,也便于穿线施工和线路维修,并可大大降低工程造价。

2.液晶中文界面,全部采用汉字显示。

各种操作以菜单形式给出提示,并且可以通过本公司专门配套研发的专用软件(SELECT)进行详细的中文6个汉字或12个字符的报警地址注释,可以显示出故障或报警的具体设备、报警位置,使显示内容一目了然,操作起来便捷、清楚、直观,实现了良好的人机对话。

3.所接现场设备均内嵌微处理器。

J1830光电感烟探测器和J1835电子感温探测器均实时监视现场参数的变化,通过微处理器对采集到的现场参数进行分析、判断,从而大大降低探测器与控制器之间的信息传输量,进一步提高了火灾报警系统的可靠性。

4. 黑匣子功能。

控制器内置大容量存储器,可以长时间保存控制器开机、关机、火警、各种故障、联动设备的启动及停止等信息。

便于事故发生后的信息查询。

5.极强的抗干扰能力。

控制器无论是硬件还是软件都有良好的抗干扰措施,控制器能在电磁干扰强的环境下正常稳定运行。

三极管 场效应管 快恢复二极管 肖特基二极管等查询

三极管 场效应管 快恢复二极管 肖特基二极管等查询
三极管
2SA1295 2SC3264 2SA1302 2SC3281
场效应管
2SK1400 2SK1913 2SK1627 2SK2028
三极管
2SA1494 2SC3858 2SA1265 2SC3182
场效应管
2SK1402 2SK1924 2SK1637 2SK2043
三极管
22A1492 2SC3856 2SB688 2SD718
场效应管
FS10SM-16 FS10SM-12 FS20SM-10 FS20SM-12
三极管
2SA1396 2SA1261 2SA1012 2SA1451
场效应管
FS14SM-16 FS14SM-18 FS10SM-18 FS10SM-10
三极管
2SB434 2SB435 2SB1016 2SB1019
场效应管
MTH8N60 FQA10N80 59N20 59N25
三极管
2SB546 2SB556 2SB1094 2SB1051
场效应管
SSH6N80 SSH11N80 SSH7N90 SSH8N90
三极管
2SB553 2SB601 2SB1095 2SB1185
场效应管
SSH5N90 SSH6N90 SSH9N90 SSH11N90
三极管
2SC4596 2SC4024 2SC5130 2SC2336
场效应管
2SK1358,2SK1649 2SK2847 2SK2843
三极管
2SC4153 2SC4054 2SC5706 2SC5707
场效应管
2SK1512,2SK1049 2SK724 2SK725
三极管
2SC3851 2SC3852 2SC4020 2SC4024

MMPQ2907;中文规格书,Datasheet资料

MMPQ2907;中文规格书,Datasheet资料

Base-Emitter Saturation Voltage vs Collector Current
1 0.8 0.6
125 ºC - 40 ºC 25 °C
Base Emitter ON Voltage vs Collector Current
1 0.8
- 40 ºC
0.6 0.4 0.2 0 0.1
1 KW
37 W
1.0 KW 0 - 30 V 50 W
£ 200ns
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
/
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
MMPQ2907
MMPQ2907
E3 B3 E4 B4
E1
B1
E2
B2
SOIC-16
pin #1 C1
C2 C1
C3 C2
C4 C4 C3
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

MJE5852资料

MJE5852资料

MJE5852HIGH VOLTAGE PNP POWER TRANSISTORs SGS-THOMSON PREFERRED SALESTYPE s PNP TRANSISTORsHIGH VOLTAGE CAPABILITYAPPLICATIONS: s SWITCHING REGULATORS s MOTOR CONTROL s INVERTERSDESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching speed and high voltage capability.It is intended for use in high frequency and efficiency converters, switching regulators andmotor control.July 1997 ABSOLUTE MAXIMUM RATINGS1/4THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 oC unless otherwise specified)For PNP type voltage and current values are negative.MJE58522/4MJE58523/4Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . .MJE58524/4。

MJE253G;MJE243G;中文规格书,Datasheet资料

MJE253G;MJE243G;中文规格书,Datasheet资料

10
Adc
15
W
120
mW/_C
Total Power Dissipation @ TA = 25_C
PD
Derate above 25_C
1.5
W
12
mW/_C
Operating and Storage Junction Temperature Range
TJ, Tstg –65 to +150 _C
Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0)
Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCE = 100 Vdc, IE = 0, TC = 125_C)
Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0)
Figure 2. Switching Time Test Circuit
1K
500
300
tr
200
100
50
30
20
10
td
5
3
NPN MJE243
2
PNP MJE253
VCC = 30 V IC/IB = 10 TJ = 25°C
1 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1
0.5
1.0
2.0
5.0
10
20
t, TIME (ms)
Figure 4. Thermal Response
50
100
200
/
3
IC, COLLECTOR CURRENT (AMP)

MJE340;MJE350;中文规格书,Datasheet资料

MJE340;MJE350;中文规格书,Datasheet资料

November 2011Doc ID 4171 Rev 61/8MJE340MJE350Complementary silicon power transistorsFeatures■STMicroelectronics preferred salestypes ■Complementary NPN - PNP devicesApplications■Linear and switching industrial equipmentDescriptionThe MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT -32.The complementary PNP type is MJE350.Table 1.Device summaryOrder code Marking Polarity Package Packaging MJE340MJE340NPN SOT -32Tube MJE350MJE350PNPSOT -32TubeElectrical ratings MJE340, MJE3502/8Doc ID 4171 Rev 61 Electrical ratingsNote:for PNP type voltage and current values are negative.Table 2.Absolute maximum ratingsSymbolParameterValueUnitMJE340 (NPN)MJE350 (PNP)V CBO Collector-base voltage (I E = 0) 300V V CEO Collector-emitter voltage (I B = 0) 300V V EBO Base-emitter voltage (I C = 0) 3V I C Collector current0.5A P TOT T otal dissipation at T c ≤ 25 °C 20.8W T stg Storage temperature-65 to 150°C T JMax operating junction temperature150Table 3.Thermal dataSymbol ParameterValue Unit R thJCThermal resistance junction-case max6.0°C/WMJE340, MJE350Electrical characteristicsDoc ID 4171 Rev 63/82 Electrical characteristicsT case = 25 °C unless otherwise specified.Note:for PNP type voltage and current values are negative.Table 4.Electrical characteristicsSymbol ParameterTest conditionsMin.Typ.Max.Unit I CBO Collector cut-off current(I E = 0)V CB = 300 V 100µA I EBO Emitter cut-off current (I C = 0)V EB = 3 V100µAV CEO(sus)(1)1.Pulse test: pulse duration = 300 µs, duty cycle ≤ 2 %.Collector-emittersustaining voltage (I B = 0)I C = 1 mA300V V BE(on)Emitter-base on voltage (I C = 0)I C = 50 mA V CE =10 V 1V V CE(sat) (1)Collector-emitter saturation voltage I C = 100 mA I B = 10 mA 0.5Vh FEDC current gainI C = 50 mA V CE = 10 V30240Electrical characteristics MJE340, MJE3504/8Doc ID 4171 Rev 62.1 Electrical characteristics (curves)Figure 6.Collector-emitter saturationFigure 7.Base-emitter saturationMJE340, MJE350Package mechanical data 3 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: .ECOPACK® is an ST trademark.Doc ID 4171 Rev 65/8Package mechanical data MJE340, MJE350Table 5.SOT-32 (TO-126) mechanical datamm.Dim.Min.Typ.Max.A 2.40 2.90B0.640.88B10.390.63D10.5011.05E7.407.80e 2.04 2.29 2.54e1 4.07 4.58 5.08L15.3016ØP 2.90 3.20Q 3.80Q11 1.52H2 2.15I 1.276/8Doc ID 4171 Rev 6MJE340, MJE350Revision historyDoc ID 4171 Rev 67/84 Revision historyTable 6.Document revision historyDate RevisionChanges05-Apr-20115Minor text changes10-Nov-20116Added: V CBO in Table 2, V CE(sat) and V BE(on) in Table 4MJE340, MJE350Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNLESS OTHERWISE SET FORTH IN ST’S TERM S AND CONDITIONS OF SALE ST DISCLAIM S ANY EXPRESS OR IM PLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIM ITATION IM PLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2011 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America8/8Doc ID 4171 Rev 6分销商库存信息:STMMJE340MJE350。

MJE13001-13009的主要参数

MJE13001-13009的主要参数

MJE13001 是小功率高压高速开关三极管,典型应用:荧光灯电子镇流器。

它采用TO-92 封装,管脚排列如图:MJE13001 主要参数:集电极-基极最高耐压VCBO=500V 集电极-发射极最高耐压VCEO=400V 发射极-基极最高耐压VEBO=9V 集电极电流IC=0.3A耗散功率PC=7W结温Tj=150℃贮藏温度TSTG=-50~150℃直流放大系数HFE=8~403DD13001 是硅NPN 型小功率开关三极管,主要用于节能灯电子镇流器、手机充电器等开关电源电路。

3DD13001 具有击穿电压高、反向漏电流小、开关速度快、饱和压降低、高温性能好等特点。

采用TO-251 封装的3DD13001 管脚排列如图:1脚:基极;2脚:集电极;3脚:发射极3DD13001 主要参数:集电极最大耗散功率PCM=1.2W (Tamb=25℃)集电极最大允许电流ICM=0.2A集电极-基极反向击穿电压BVCBO=600V 集电极-发射极反向击穿电压BVCEO=400V 发射极-基极反向击穿电压BVEBO=7V结温Tj=150℃贮藏温度TSTG=-55~150℃直流放大系数=8~40MJE13002 是高压高速开关三极管,国产同类型号为3DD13002。

它主要用于电子节能灯、日光灯电子镇流器,以及其它开关电路中。

MJE13002(3DD13002)采用TO-126 封装的外形尺寸和管脚排列如图:MJE13002(3DD13002)主要参数VCBO=600V VCEO=400V VEBO=7V IC=1A PC=1.2W Tj=150℃TSTG=-55~150℃ICBO=100μA IEBO=100μA HFE=10~40VCE(sat) =0.5V VBE(sat) =1.0V fT=4MHz Tf=0.6μsMJE13003 是主要用于节能灯及荧光灯电子镇流器的高反压大功率开关三极管,硅NPN 型,采用TO-126 封装,它的外形和管脚排列如下:MJE13003 主要参数集电极-基极电压VCBO 700 V 集电极-发射极电压VCEO 400 V 发射极-基极电压VEBO 9V集电极电流IC 2.0 A 集电极耗散功率PC 40 W 最高工作温度Tj 150 °C 贮存温度Tstg -65-150 °C集电极-基极截止电流ICBO (VCB=700V) 100 μA集电极-发射极截止电流ICEO (VCE=400V,IB=0) 250 μA集电极-发射极电压VCEO (IC=10mA,IB=0) 400 V 发射极-基极电压VEBO (IE=1mA,IC=0) 9 V 直流电流放大倍数5~403DD13005 是高反压大功率开关三极管,硅材料NPN 型,平面扩散工艺制造,开关速度快,耐压高。

MJ-II面筋数量和质量测定仪使用说明书

MJ-II面筋数量和质量测定仪使用说明书
5.3 干面筋含量是以每百克含水量为 14%的小麦粉含有干面筋 的克数来表示的,如试样质量为 10g 而干面筋称得质量为 W 干(g), 则干面筋含量可按下列公式计算:
5.4 面筋持水率是以每百克干面筋含有水份的克数表示,可按下 列公式计算:
6
托普仪器—致力于中国农业仪器的发展
5.5 测量结果 5.5.1 湿面筋含量的双测定结果允许差不超过 1.0%,取平均值 为测定结果,如超过上述要求,则应进行第三次测定,取相近的结果 加以平均作为测定结果,数值保留小数点后一位。 5.5.2 面筋指数的双测定结果允许差:面筋指数在 70~100 之 间,允许差不超过 11 个单位;面筋指数在 70 以下,双测定结果允许 不超过 15 个单位。如符合上述要求,则取平均值为测定结果,否则 应作第三次测定,然后取三次结果的平均值作为最后测定结果,测定 结果取整数位。 5.5.3 干面筋含量的双测定结果允许差不超过 0.5%,以平均值 作为测定结果,测定结果取小数点后一位。 5.5.4 面筋持水率:双测定结果允许差及小数点位数同 5.5.1。 6.测定结束后的操作 6.1 测定结束后,用自来水代替氯化钠溶液对仪器中的供水系统 清洗 5min。 6.2 关闭仪器电源
5
托普仪器—致力于中国农业仪器的发展
4. 全麦粉样品的测定 按标准粉样品测定的洗涤过程结束后,再用手洗 2min,以去除面
筋中少量的麸皮,再离心、称量、计算后得到湿面筋的含量和面筋指 数,烘干称重即可计算得到面筋含量及面筋持水率。
5. 测定结果 5.1 湿面筋含量是以每百克含水量为 14%的小麦粉含有湿面筋
10
8Leabharlann 托普仪器—致力于中国农业仪器的发展
10 洗涤时间的选用与面粉加工精度、麸皮含量有关。 11.更换保险丝时(2A),拉开电源插座下的小盒,可见两粒保险 丝,取出靠里面的一粒(工作),将靠外面的一粒移入里面(备用), 推上小盒即可。 12.烘干仪:内腔贴有四块高温薄膜,使用时不准划伤以免破损。 13.仪器保修期壹年。
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Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450


Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0)
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 7
/
Publication Order Number: MJE18002/D
MJE18002G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Collector−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 125°C @ TC = 125°C
DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Fall Time
IC = 0.4 Adc, IB1 = 40 mAdc,
tfi

IB2 = 0.2 Adc
@ TC = 125°C

Storage Time
tsi

@ TC = 125°C

Crossover Time
tc

@ TC = 125°C

Fall Time
IC = 1.0 Adc, IB1 = 0.2 Adc,

Storage Time
tsi

@ TC = 125°C

Crossover Time
tc

@ TC = 125°C

Typ
Max
200
300
130

1.2
2.5
1.5

85
150
95

1.7
2.5
2.1

125
200
120

0.7
1.25
0.8

110
200
110

110
175
120

1.7
2.75
20

6.0
8.0

5.0
8.0

10
20

Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT

13

MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
MJE18002G
SWITCHMODEt
NPN Bipolar Power Transistor For Switching Power Supply Applications
The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
MJE18002G
TYPICAL STATIC CHARACTERISTICS
VCE = 1 V
100 TJ = 125°C
TJ = 25°C
TJ = - 20°C 10
VCE = 5 V
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN
• Tight Parametric Distributions are Consistent Lot−to−Lot • Standard TO−220 • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol Value Unit
ORDERING INFORMATION
Device
Package
Shipping
MJE18002G
TO−220 (Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
2.25

200
300
250

140
200
185

2.2
3.0
2.5

140
250
220

Unit ns ms ns ms
ns ms ns ns ms ns ns ms ns
/
3
100 TJ = 125°C
TJ = 25°C 10
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current − Continuous − Peak (Note 1)
Base Current
− Continuous − Peak (Note 1)
IB1 = 40 mA VCC = 300 V
3.0 ms @ TC = 125°C

1.5


3.8

(see Figure 18)
IC = 1.0 A
1.0 ms @ TC = 125°C

8.0


14

IB1 = 0.2 A VCC = 300 V
3.0 ms @ TC = 125°C

2.0
Total Device Dissipation @ TC = 25_C Derate above 25°C
VCEO VCES VEBO
IC ICM IB IBM PD
450
1000
9.0
2.0 5.0
1.0 2.0
50 0.4
Vdc Vdc Vdc Adc
Adc
W W/_C
Operating and Storage Temperature THERMAL CHARACTERISTICS
Characteristic
Symbol
Min
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms)
Turn−On Time Turn−Off Time
IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc VCC = 300 V
TJ, Tstg −65 to 150 _C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
2.5
_C/W
Thermal Resistance, Junction−to−Ambient RqJA
62.5 _C/W
Maximum Lead Temperature for Soldering
TL
Purposes 1/8″ from Case for 5 Seconds
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

POWER TRANSISTOR 2.0 AMPERES
100 VOLTS − 50 WATTS
1 23
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