BAS21;BAS21_D87Z;BAS21_ND87Z;中文规格书,Datasheet资料
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LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Test Conditions
IR = 100 µ A VR = 200 V VR = 200 V, TA = 150 °C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω
Min
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
250 200 600 700 1.0 2.0 -55 to +150 150
Units
V mA mA mA A A °C °C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless rwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
BAS21
BAS21
CONNECTION DIAGRAM
3
3
3
A82.
2
1 2
1 2 NC
SOT-23
1
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings*
Max
BAS21 350 2.8 357
Units
mW mW/°C °C/W
ã 2002 Fairchild Semiconductor Corporation
BAS21. Rev. A1
/
BAS21
General Purpose High Voltage Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF CO TRR
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time
OPTOLOGIC ® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
250
Max
100 100 1.0 1.25 5.0 50
Units
V nA µA V V pF nS
/
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
Rev. H7
/
分销商库存信息:
FAIRCHILD BAS21 BAS21_D87Z BAS21_ND87Z
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST ®
DISCLAIMER
FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™
Test Conditions
IR = 100 µ A VR = 200 V VR = 200 V, TA = 150 °C IF = 100 mA IF = 200 mA VR = 0, f = 1.0 MHz IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 Ω
Min
Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current
TA = 25°C unless otherwise noted
Parameter
Value
250 200 600 700 1.0 2.0 -55 to +150 150
Units
V mA mA mA A A °C °C
Tstg TJ
Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless rwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
BAS21
BAS21
CONNECTION DIAGRAM
3
3
3
A82.
2
1 2
1 2 NC
SOT-23
1
General Purpose High Voltage Diode
Sourced from Process 1H. See MMBD1401 for characteristics.
Absolute Maximum Ratings*
Max
BAS21 350 2.8 357
Units
mW mW/°C °C/W
ã 2002 Fairchild Semiconductor Corporation
BAS21. Rev. A1
/
BAS21
General Purpose High Voltage Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF CO TRR
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time
OPTOLOGIC ® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench ® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER ®
SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET ®
250
Max
100 100 1.0 1.25 5.0 50
Units
V nA µA V V pF nS
/
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
Rev. H7
/
分销商库存信息:
FAIRCHILD BAS21 BAS21_D87Z BAS21_ND87Z
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST ®
DISCLAIMER
FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™