0.16DRAM process flow
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CO2 CT1 CT2 CO2
CT2
CT2
P2 STI Cell
P2
P2 STI STI N-Well PERIPHERAL CROSS SECTION STI P-Well STI
CELL ARRAY CROSS SECTION
0.16um DRAM process flow ( Profile )-Metal 1
P-Well
STI
CELL ARRAY CROSS SECTION
0.16um DRAM proMD1 &Via 1
IMD1 OX. IMD1 THK IMD1 CMP IMD1 Post CMP THK VIA1 Photo VIA1 Overlay VIA1 CD VIA1 ADI VIA1 Etch VIA1 CD VIA1 AEI
0.16um DRAM Process Flow ( Profile )
07-8-31 Wangzheng
CONTENTS
1. 2.
0.16um DRAM Concept 0.16um DRAM Process Flow
1.
0.16um DRAM Concept
DRAM Architecture
DRAM Cell Operation
SAC Oxidation N-Well Photo N-Well Overlay N-Well ADI N-Well IMP N-Well ASH
N-Well AEI
PR
STI P-TYPE SUBSTRATE CELL ARRAY CROSS SECTION PERIPHERAL CROSS SECTION STI STI N-Well STI
AA Depth
SiN
STI PRE- OXIDE
Profile & Defect
SiN
STI STI PRE- OXIDE STI
SiN
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-AA DEP and CMP
IMD1
V1
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
Cell CELL ARRAY CROSS SECTION
P-Well
STI
0.16um DRAM process flow ( Profile )-M2
M2 Ti/TiN M2 W-Plug
Write (“1”):
Bitline (Vcc)
Read:
Bitline (1/2Vcc) Wordline (1.5Vcc) Vref Capacitor Q Bitline (1/2Vcc)
Wordline (1.5Vcc)
Vref Capacitor
Q
SA
“1” or “0”
2. 0.16um DRAM Process Flow- Zero Mark*
IMD2
V2
IMD2
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
P4 Dep. P4 Photo P4 Overlay P4 ADI CD P4 Etch P4 ASH P4 AEI CD
P2
P2
P2
STI Cell CELL ARRAY CROSS SECTION
STI
STI N-Well
STI P-Well
STI
PERIPHERAL CROSS SECTION
C1 BP-TEOS CMP C1 Photo
C1 Overlay C1 CD C1 ADI C1 Etch
PR
STI P-Well N-Well
STI
STI N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
STI HDP Dep. STI CMP STI SiN Removal
HDP Gap Fill
SiN
PRE- OXIDE HDP Gap Fill
SiN
SiN
PRE- OXIDE
SiN
STI
PRE- OXIDE
STI
STI
0.16um DRAM process flow ( Profile )-N-Well
PR
STI N-Well P-Well STI
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Cell N-Well
Cell Photo Cell Overlay
Cell N-Well IMP
Cell P-Well IMP CELL ASH Cell AEI
0.16um DRAM process flow ( Profile )-CT1 & CT2
CT1 BP-TEOS Dep. CT1 Photo CT1 Overlay CT1 CD CT1 ADI CT1 Etch CT1 ASH CT1 CD CT2 Photo CT2 Overlay CT2 CD CT2 ADI CT2 Etch CT2 ASH CT2 CD CT2 AEI
PR PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-C1
C1 SiN Dep. C1 BP-TEOS C1 ASH C1 Si-RECESS ETCH C1 AEI CD C1 AEI
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
STI P-Well
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )- P1 Gate*
P1 Gate Oxidation P1 Poly Dep. P1 WSi Dep. P1 ARC P1 SiN P1 Photo (Q-time) Pl Overlay P1 ADI CD Dummy POLY Etch * P1 NIT Etch (Q-time) P1 ASH P1 Post-clean P1 ROX THK
M2 W-Plug CMP M2 AL Dep. (Ti/TiN/AlCu/TiN) M2 Photo M2 Overlay M2 CD M2 ADI M2 Etch M2 ASH M2 CD M2 AEI
IMD1
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
Wafer Start Zero MARK OX Zero MARK Photo DRY ETCH (Oxide/Silicon)* ASH Zero MARK AEI
Zero MARK DEPTH
Profile
PR
MARK PERIPHERAL CROSS SECTION
Cell CELL ARRAY CROSS SECTION
P-Well
STI
0.16um DRAM process flow ( Profile )-IMD2 &Via 2
IMD2 Ox. IMD2 THK IMD2 CMP IMD2 Post CMP THK VIA2 Photo VIA2 Overlay VIA2 CD VIA2 ADI VIA2 Etch VIA2 ASH VIA2 CD VIA2 AEI
M1 Ti / TiN M1 W-CVD M1 ARC M1 ASH M1 Photo M1 Overlay M1 CD M1 ADI M1 Etch M1 ASH M1 CD-Etch M1 AEI
ILD
P2 STI Cell
P2
P2 STI STI N-Well PERIPHERAL CROSS SECTION STI
PR
STI
0.16um DRAM process flow ( Profile )-P-Well
P-Well Photo
P-Well Overlay P-Well ADI P-Well IMP P-WELL ASH
PR
STI P-TYPE SUBSTRATE CELL ARRAY CROSS SECTION STI STI
S/D OX P+ S/D Photo P+ S/D Overlay P+ S/D ADI P+ S/D IMP P+ ASH
P+ S/D AEI
PR
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
0.16um DRAM process flow ( Profile )-STI*
AA Oxide Growth
AA SiN Dep.
AA Photo AA Photo CD AA ADI
AA Dry ETCH*
AA ASH AA Post-clean AA ETCH CD
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-NMOS IMP
N+ S/D Photo N+ S/D Overlay N+ S/D ADI N+ S/D IMP N+ ASH
N+ S/D AEI
PR
P1 AEI CD
Profile & Defect
PR PR PR PR PR PR
STI P-Well N-Well
STI
STI N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Spacer
P2
P2
P2
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-R-poly
P3 Pre-clean P3 Dep. ONO SiN Pre-clean ONO SiN Dep. ONO SiN OX
SP Ox. SP SiN Dep. SP SiN Etch SP Post Etch CLN
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-PMOS IMP
R-Poly Dep.
R-Poly CMP
P2
P2
P2
STI Cell CELL ARRAY CROSS SECTION
STI
STI N-Well
STI P-Well
STI
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Poly4
0.16um DRAM process flow ( Profile )-C2
P2 Poly Dep. P2 CMP P2 CMP THK C2 BP-TEOS C2 ADI CD C2 ADI C2 Etch C2 AEI CD
C2 Photo
C2 Overlay
CT2
CT2
P2 STI Cell
P2
P2 STI STI N-Well PERIPHERAL CROSS SECTION STI P-Well STI
CELL ARRAY CROSS SECTION
0.16um DRAM process flow ( Profile )-Metal 1
P-Well
STI
CELL ARRAY CROSS SECTION
0.16um DRAM proMD1 &Via 1
IMD1 OX. IMD1 THK IMD1 CMP IMD1 Post CMP THK VIA1 Photo VIA1 Overlay VIA1 CD VIA1 ADI VIA1 Etch VIA1 CD VIA1 AEI
0.16um DRAM Process Flow ( Profile )
07-8-31 Wangzheng
CONTENTS
1. 2.
0.16um DRAM Concept 0.16um DRAM Process Flow
1.
0.16um DRAM Concept
DRAM Architecture
DRAM Cell Operation
SAC Oxidation N-Well Photo N-Well Overlay N-Well ADI N-Well IMP N-Well ASH
N-Well AEI
PR
STI P-TYPE SUBSTRATE CELL ARRAY CROSS SECTION PERIPHERAL CROSS SECTION STI STI N-Well STI
AA Depth
SiN
STI PRE- OXIDE
Profile & Defect
SiN
STI STI PRE- OXIDE STI
SiN
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-AA DEP and CMP
IMD1
V1
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
Cell CELL ARRAY CROSS SECTION
P-Well
STI
0.16um DRAM process flow ( Profile )-M2
M2 Ti/TiN M2 W-Plug
Write (“1”):
Bitline (Vcc)
Read:
Bitline (1/2Vcc) Wordline (1.5Vcc) Vref Capacitor Q Bitline (1/2Vcc)
Wordline (1.5Vcc)
Vref Capacitor
Q
SA
“1” or “0”
2. 0.16um DRAM Process Flow- Zero Mark*
IMD2
V2
IMD2
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
P4 Dep. P4 Photo P4 Overlay P4 ADI CD P4 Etch P4 ASH P4 AEI CD
P2
P2
P2
STI Cell CELL ARRAY CROSS SECTION
STI
STI N-Well
STI P-Well
STI
PERIPHERAL CROSS SECTION
C1 BP-TEOS CMP C1 Photo
C1 Overlay C1 CD C1 ADI C1 Etch
PR
STI P-Well N-Well
STI
STI N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
STI HDP Dep. STI CMP STI SiN Removal
HDP Gap Fill
SiN
PRE- OXIDE HDP Gap Fill
SiN
SiN
PRE- OXIDE
SiN
STI
PRE- OXIDE
STI
STI
0.16um DRAM process flow ( Profile )-N-Well
PR
STI N-Well P-Well STI
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Cell N-Well
Cell Photo Cell Overlay
Cell N-Well IMP
Cell P-Well IMP CELL ASH Cell AEI
0.16um DRAM process flow ( Profile )-CT1 & CT2
CT1 BP-TEOS Dep. CT1 Photo CT1 Overlay CT1 CD CT1 ADI CT1 Etch CT1 ASH CT1 CD CT2 Photo CT2 Overlay CT2 CD CT2 ADI CT2 Etch CT2 ASH CT2 CD CT2 AEI
PR PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-C1
C1 SiN Dep. C1 BP-TEOS C1 ASH C1 Si-RECESS ETCH C1 AEI CD C1 AEI
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
STI P-Well
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )- P1 Gate*
P1 Gate Oxidation P1 Poly Dep. P1 WSi Dep. P1 ARC P1 SiN P1 Photo (Q-time) Pl Overlay P1 ADI CD Dummy POLY Etch * P1 NIT Etch (Q-time) P1 ASH P1 Post-clean P1 ROX THK
M2 W-Plug CMP M2 AL Dep. (Ti/TiN/AlCu/TiN) M2 Photo M2 Overlay M2 CD M2 ADI M2 Etch M2 ASH M2 CD M2 AEI
IMD1
P2 STI
P2
P2 STI STI STI N-Well PERIPHERAL CROSS SECTION
Wafer Start Zero MARK OX Zero MARK Photo DRY ETCH (Oxide/Silicon)* ASH Zero MARK AEI
Zero MARK DEPTH
Profile
PR
MARK PERIPHERAL CROSS SECTION
Cell CELL ARRAY CROSS SECTION
P-Well
STI
0.16um DRAM process flow ( Profile )-IMD2 &Via 2
IMD2 Ox. IMD2 THK IMD2 CMP IMD2 Post CMP THK VIA2 Photo VIA2 Overlay VIA2 CD VIA2 ADI VIA2 Etch VIA2 ASH VIA2 CD VIA2 AEI
M1 Ti / TiN M1 W-CVD M1 ARC M1 ASH M1 Photo M1 Overlay M1 CD M1 ADI M1 Etch M1 ASH M1 CD-Etch M1 AEI
ILD
P2 STI Cell
P2
P2 STI STI N-Well PERIPHERAL CROSS SECTION STI
PR
STI
0.16um DRAM process flow ( Profile )-P-Well
P-Well Photo
P-Well Overlay P-Well ADI P-Well IMP P-WELL ASH
PR
STI P-TYPE SUBSTRATE CELL ARRAY CROSS SECTION STI STI
S/D OX P+ S/D Photo P+ S/D Overlay P+ S/D ADI P+ S/D IMP P+ ASH
P+ S/D AEI
PR
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
0.16um DRAM process flow ( Profile )-STI*
AA Oxide Growth
AA SiN Dep.
AA Photo AA Photo CD AA ADI
AA Dry ETCH*
AA ASH AA Post-clean AA ETCH CD
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-NMOS IMP
N+ S/D Photo N+ S/D Overlay N+ S/D ADI N+ S/D IMP N+ ASH
N+ S/D AEI
PR
P1 AEI CD
Profile & Defect
PR PR PR PR PR PR
STI P-Well N-Well
STI
STI N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Spacer
P2
P2
P2
PR
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-R-poly
P3 Pre-clean P3 Dep. ONO SiN Pre-clean ONO SiN Dep. ONO SiN OX
SP Ox. SP SiN Dep. SP SiN Etch SP Post Etch CLN
STI
P-Well N-Well
STI
STI
N-Well
STI
P-Well
STI
CELL ARRAY CROSS SECTION
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-PMOS IMP
R-Poly Dep.
R-Poly CMP
P2
P2
P2
STI Cell CELL ARRAY CROSS SECTION
STI
STI N-Well
STI P-Well
STI
PERIPHERAL CROSS SECTION
0.16um DRAM process flow ( Profile )-Poly4
0.16um DRAM process flow ( Profile )-C2
P2 Poly Dep. P2 CMP P2 CMP THK C2 BP-TEOS C2 ADI CD C2 ADI C2 Etch C2 AEI CD
C2 Photo
C2 Overlay